CN112290181A

CN112290181A - Millimeter wave waveguide power combiner

Info

Publication number: CN112290181A
Application number: CN202011192676.7A
Authority: CN
Inventors: 陈董; 袁锴; 雷蕾; 张洪林
Original assignee: Nanjing University of Posts and Telecommunications
Current assignee: Nanjing University of Posts and Telecommunications
Priority date: 2020-10-30
Filing date: 2020-10-30
Publication date: 2021-01-29

Abstract

The invention discloses a millimeter wave waveguide power synthesizer which comprises an input end waveguide, a driving amplification chip and a power amplification chip, wherein the input end waveguide is connected with a driving output waveguide, the driving amplification chip is connected with a driving output waveguide, the driving output waveguide is connected with a waveguide power division structure, the rear part of the waveguide power division structure is connected with the power amplification chip and an output end waveguide, and the input end waveguide is connected with the driving output waveguide and the output end waveguide is connected with the waveguide power division structure through microstrip lines. The millimeter wave waveguide power combiner is small in insertion loss and return loss, has a branch with high isolation, can provide good heat dissipation characteristics, has large-scale space power combining potential, and is simple in structure and easy to manufacture.

Description

Millimeter wave waveguide power combiner

Technical Field

The present invention relates to a waveguide power combiner, and more particularly, to a millimeter wave waveguide power combiner.

Background

The millimeter wave power output device is one of core devices of the millimeter wave system. Conventional vacuum electronic devices such as klystrons and traveling wave tubes still play an important role in numerous high-power demand fields due to high efficiency and high power output capability in a millimeter wave frequency band. The vacuum electronic device can output larger power, but has the defects of high working voltage, low reliability, short service life and the like. Millimeter wave solid state devices have the advantages of low operating voltage, high reliability, long service life, and the like, and are receiving much attention from researchers. The semiconductor and computer simulation technology is rapidly developed, the development of the microwave millimeter wave solid-state power device is promoted, and a foundation is laid for the development of the frequency band solid-state transmitter. In view of the problem that the output power of the current single millimeter wave power chip cannot meet the system requirements, a power synthesis technology is adopted in engineering, namely, a plurality of solid state power devices are connected in parallel, and the output power of each power chip is synthesized and then output, so that the millimeter wave power synthesis technology becomes one of key technologies for obtaining millimeter wave solid state high power output. The existing waveguide power synthesizer has low loss and high isolation, but has poor heat dissipation performance and short service life, and cannot meet the requirement of millimeter wave solid-state high-power output.

Disclosure of Invention

The purpose of the invention is as follows: the invention aims to provide a millimeter wave waveguide power combiner which is low in loss, high in isolation and good in heat dissipation property.

The technical scheme is as follows: the millimeter wave waveguide power synthesizer comprises an input end waveguide, a driving amplification chip and a power amplification chip, wherein the input end waveguide is connected with a driving output waveguide, the driving amplification chip is connected with a driving output waveguide, the driving output waveguide is connected with a waveguide power division structure, the rear part of the waveguide power division structure is connected with the power amplification chip and an output end waveguide, and the input end waveguide is connected with the driving output waveguide and the output end waveguide is connected with the waveguide power division structure through microstrip lines.

The drive output waveguide is connected with the waveguide power dividing structure through the transition cavity, the waveguide power dividing structure comprises at least 2 branch cavities, the microstrip line is a 50-80 omega microstrip line, the width of the microstrip line is 0.7-0.8 mm, the drive amplification chip and the power amplification chip are arranged on the dielectric substrate, and the dielectric constant of the dielectric substrate is 2.2-2.6.

Has the advantages that: compared with the prior art, the invention has the following remarkable advantages: 1. the insertion loss and the return loss are small, the branch with high isolation is provided, good heat dissipation characteristics can be provided, and the large-scale space power synthesis potential is realized; 2. simple structure and easy manufacture.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a top view of the structure of the present invention;

FIG. 3 is a simulation diagram of the S-parameters of the present invention.

Detailed Description

As shown in fig. 1 and 2, the millimeter wave waveguide power combiner includes an input end waveguide 1, a driving amplification chip 3, and a power amplification chip 6, where the driving amplification chip 3 and the power amplification chip 6 are disposed on a dielectric substrate, the dielectric constant of the dielectric substrate is 2.2, the input end waveguide 1 is connected to a driving output waveguide 5, the driving amplification chip 3 is connected to the driving output waveguide 5, the driving output waveguide 5 is connected to a waveguide power division structure, the driving output waveguide 5 and the waveguide power division structure are connected by a transition cavity 4, the waveguide power division structure includes 2 branch cavities, the power amplification chip is disposed in the branch cavities, the branch cavities are connected to an output end waveguide 7 after being gathered, the input end waveguide 1 and the driving output waveguide 5, the output end waveguide 7 and the waveguide power division structure are connected by an Ω 2, and the microstrip line 2 is a 50 microstrip line.

The microstrip line comprises an input end waveguide 1 and an output end waveguide 7, wherein the wide side is 6mm long, the narrow side is 3mm long and 6mm long, the microstrip line 2 is 0.78mm wide, 11.33mm long, the transition cavity is 3mm wide, 2mm high, 1.50mm long, the branch cavity is 12mm wide, 3mm narrow and 6mm long; when the power amplifier is used, a signal input by the input end waveguide 1 is amplified by the driving amplification chip to provide a sufficiently large signal for a next-stage circuit, the signal passes through the power amplification chip in the waveguide power division structure branch cavity, the amplified signal is synthesized by the power of the output end waveguide 7, is converted to the microstrip line 2 by the output end waveguide 7 and is output by the microstrip line 2.

FIG. 3 shows a simulation diagram of S-parameter of the millimeter wave waveguide power combiner, from which it can be seen that the insertion loss S of the millimeter wave waveguide power combiner is within a bandwidth of 30-40 GHz₂₁Less than 1dB, return loss S in the whole band₁₁Below 15 dB. It can be seen that this structure has good power combining characteristics.

Claims

1. The millimeter wave waveguide power synthesizer is characterized by comprising an input end waveguide (1), a drive amplification chip (3) and a power amplification chip (6), wherein the input end waveguide (1) is connected with the drive output waveguide (5), the drive amplification chip (3) is connected with the drive output waveguide (5), the drive output waveguide (5) is connected with a waveguide power division structure, the waveguide power division structure is connected with the power amplification chip (6) and an output end waveguide (7), the input end waveguide (1) is connected with the drive output waveguide (5), and the output end waveguide (7) is connected with the waveguide power division structure through a microstrip line (2).

2. The millimeter wave waveguide power combiner according to claim 1, wherein the amplifying waveguide (5) and the waveguide power dividing structure are connected through a transition cavity (4).

3. The millimeter wave waveguide power combiner of claim 1, wherein the waveguide power splitting structure comprises at least 2 branch cavities.

4. The millimeter wave waveguide power combiner according to claim 1, wherein the microstrip line (2) is a 50-80 Ω microstrip line.

5. The millimeter wave waveguide power combiner according to claim 4, wherein the microstrip line (2) has a width of 0.7-0.8 mm.

6. The millimeter wave waveguide power combiner of claim 1, wherein the driving amplification chip and the power amplification chip are disposed on a dielectric substrate.

7. The millimeter wave waveguide power combiner of claim 6, wherein the dielectric substrate is a non-polar substance.

8. The millimeter wave waveguide power combiner of claim 7, wherein the dielectric substrate has a dielectric constant of 2.2-2.6.