CN112271248A - Pressure sensor structure based on oxide nanowires and preparation method thereof - Google Patents
Pressure sensor structure based on oxide nanowires and preparation method thereof Download PDFInfo
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- CN112271248A CN112271248A CN202011159657.4A CN202011159657A CN112271248A CN 112271248 A CN112271248 A CN 112271248A CN 202011159657 A CN202011159657 A CN 202011159657A CN 112271248 A CN112271248 A CN 112271248A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 50
- 239000007783 nanoporous material Substances 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 20
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Abstract
A pressure sensor structure based on oxide nano wire and its preparation method, the pressure sensor structure includes the substrate; a bottom electrode disposed on the substrate; a seed layer disposed on the bottom electrode; the oxide nanowire is arranged on the seed layer; a support layer disposed on the oxide nanowires; and a top electrode disposed on the support layer. The pressure sensor provided by the invention has a simple process, and can be popularized to the manufacturing of various pressure sensors made of materials with pressure induction effects; the pressure sensor device of the invention has the characteristics of simple manufacture, low cost and low energy consumption.
Description
Technical Field
The invention belongs to the field of sensors, and particularly relates to a pressure sensor structure based on oxide nanowires and a preparation method thereof.
Background
A Pressure sensor (Pressure sensor) is a device that senses a Pressure signal and converts the Pressure signal into an electrical signal according to a certain rule for output. A pressure sensor is usually composed of a pressure sensitive element and a signal processing unit. Pressure sensors can be classified into gauge pressure sensors, differential pressure sensors, and absolute pressure sensors according to different types of test pressures. The materials currently used to implement pressure sensing are primarily piezoelectric materials. Wherein the ceramic material with very high piezoelectric coefficient becomes the best choice for realizing the pressure conversion. However, the material needs severe conditions such as high temperature and high pressure when polarization is completed, so that the application of the material in low-temperature preparation processes of Thin Film Transistor (TFT) display panels and the like is limited; another type of piezoelectric material that has been studied more is polyvinylidene fluoride (PVDF), and the same problem is that high temperature and high electric field are required for the preparation of this type of material in order to achieve relatively high sensitivity and piezoelectric coefficient, which also limits the application in integration with TFTs.
Disclosure of Invention
In view of the above, it is a primary object of the present invention to provide a pressure sensor structure based on oxide nanowires and a method for manufacturing the same, so as to at least partially solve at least one of the above technical problems.
To achieve the above object, as one aspect of the present invention, there is provided an oxide nanowire-based pressure sensor structure, including:
a substrate;
a bottom electrode disposed on the substrate;
a seed layer disposed on the bottom electrode;
the oxide nanowire is arranged on the seed layer;
a support layer disposed on the oxide nanowires; and
and the top electrode is arranged on the supporting layer.
As another aspect of the present invention, there is also provided a method for preparing an oxide nanowire-based pressure sensor structure, including:
preparing a bottom electrode on a substrate;
preparing a seed layer on the bottom electrode;
preparing a nano-pore material on the seed layer;
preparing oxide nanowires in the nanoporous material;
manufacturing a supporting layer on the oxide nanowire; and
and manufacturing a top electrode on the supporting layer.
Based on the technical scheme, compared with the prior art, the pressure sensor structure based on the oxide nanowire and the preparation method thereof have at least one or part of the following advantages:
1. the pressure sensor provided by the invention has a simple process, and can be popularized to the manufacturing of various pressure sensors made of materials with pressure induction effects;
2. compared with the traditional piezoelectric material, such as a pressure sensor made of ceramic materials, the preparation temperature is generally over 1000K, and the invention realizes the technology of preparing the pressure sensor at low temperature (70-100 ℃);
3. compared with the traditional material (such as polymer material) which needs a high polarization electric field (600V) to realize the pressure sensing characteristic, the invention realizes the pressure sensing characteristic of the pressure sensor under the operation of lower voltage (3-5V);
4. the pressure sensor device is simple to manufacture and low in cost;
5. the pressure sensor manufactured by the invention has the characteristic of low energy consumption.
Drawings
FIG. 1 is a schematic structural diagram of a zinc oxide nanowire pressure sensor in an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a nanoporous material in an embodiment of the invention;
FIG. 3 is a schematic top view of a nanoporous material in an embodiment of the invention;
FIG. 4 is a schematic flow chart of a process for preparing ZnO NWs according to an embodiment of the present invention.
Description of reference numerals:
100-a substrate; 200-a bottom electrode; 300-a seed layer; 400-nanoporous materials; 500-zinc oxide nanowire layer; 600-a support layer; 700-top electrode.
Detailed Description
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and examples to assist those skilled in the art in fully understanding the objects, features and effects of the present invention. Exemplary embodiments of the present invention are illustrated in the drawings, but it should be understood that the present invention can be embodied in other various forms and should not be limited to the embodiments set forth herein. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention. In addition, the embodiments of the present invention provided below and the technical features in the embodiments may be combined with each other in an arbitrary manner.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Furthermore, the terms "comprises," "comprising," "includes," "including," "has," "having," and the like, when used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components. All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
The invention provides a structure of a ZnO NWs pressure sensor and a manufacturing method thereof. The technology has important significance for realizing pressure integration schemes in flexible electronic skins, high-sensitivity mechanical arms and display panels. In the invention, a porous material is used as a mold for generating the nano wire, and a new process is used for growing the zinc oxide nano wire (ZnO NWs) as a pressure sensing unit, thereby realizing the pressure sensing technology.
The invention discloses a pressure sensor structure based on oxide nanowires, which comprises:
a substrate;
a bottom electrode disposed on the substrate;
a seed layer disposed on the bottom electrode;
an oxide nanowire layer disposed on the seed layer;
a support layer disposed on the oxide nanowires; and
and the top electrode is arranged on the supporting layer.
In some embodiments of the present invention, the material used for the oxide nanowire layer comprises zinc oxide nanowires;
in some embodiments of the invention, the layer of oxide nanowires has a thickness of 100 to 200 nm.
In some embodiments of the present invention, the substrate is made of a material including glass or silicon oxide; a thickness of 300 to 500 μm;
in some embodiments of the present invention, the bottom electrode is made of a material including Mo or Au and has a thickness of 50 to 200 nm.
In some embodiments of the invention, the material used for the support layer comprises SU-8 photoresist;
in some embodiments of the present invention, the material of the top electrode comprises Ti/Au, and the thickness of the top electrode is 100 to 500 nm.
The invention discloses a preparation method of an oxide nanowire pressure sensor, which comprises the following steps:
preparing a bottom electrode on a substrate;
preparing a seed layer on the bottom electrode;
preparing a nano-pore material on the seed layer;
preparing an oxide nanowire layer in the nanoporous material;
manufacturing a supporting layer on the oxide nanowire layer; and
and manufacturing a top electrode on the supporting layer.
In some embodiments of the invention, the temperature at which the oxide nanowire layer is prepared is 70 to 100 ℃, for example, 70 ℃, 80 ℃, 90 ℃, 100 ℃;
in some embodiments of the present invention, in the step of preparing a nanoporous material, the nanoporous material is prepared by a transfer method;
in some embodiments of the present invention, the material used for the seed layer is ZnO, and the thickness is 5 to 10 nm.
In some embodiments of the invention, the bottom electrode is prepared by a method comprising magnetron sputtering;
in some embodiments of the invention, the method for preparing the seed layer comprises a magnetron sputtering method;
in some embodiments of the invention, the support layer is prepared by a method comprising spin coating;
in some embodiments of the invention, the top electrode is prepared by a method comprising electron beam evaporation.
In some embodiments of the present invention, the material used for the oxide nanowire layer comprises zinc oxide nanowires;
in some embodiments of the invention, the layer of oxide nanowires has a thickness of 100 to 200 nm.
In some embodiments of the invention, the pore size of the nanoporous material is 5 to 10 nm;
in some embodiments of the invention, the nanoporous material is Al2O3Nanoporous materials, TiO2Nanoporous materials, SnO2Nanoporous Material, SiO2Any of the nanoporous materials;
in some embodiments of the invention, the nanoporous material has a thickness of 100 to 200 nm.
In some embodiments of the present invention, the substrate is made of a material including glass or silicon oxide; a thickness of 300 to 500 μm;
in some embodiments of the present invention, the bottom electrode is made of a material including Mo or Au, and has a thickness of 50 to 200 nm;
in some embodiments of the invention, the material used for the support layer comprises SU-8 photoresist;
in some embodiments of the present invention, the material of the top electrode comprises Ti/Au, and the thickness of the top electrode is 100 to 500 nm.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
This embodiment provides a zinc oxide nanowire (ZnO NWs) pressure sensor, as shown in fig. 1 to 3, the sensor structure includes:
an insulating layer substrate 100;
a metal bottom electrode 200;
a ZnO seed layer 300;
a pressure sensitive layer, i.e., a zinc oxide nanowire layer 500;
a support layer 600;
a top electrode 700;
wherein, the insulating layer substrate 100 is a glass or silicon oxide substrate with a thickness of 300 μm-500 μm;
wherein, the metal bottom electrode 200 is made of metal Mo or Au, etc., and the thickness is 50nm-200 nm;
wherein, the ZnO seed layer 300 is a ZnO film with the thickness of 5nm-10 nm;
wherein the zinc oxide nanowire layer 500 is a plurality of ZnO nanowires and the like, and the thickness is 100-200 nm;
wherein the supporting layer 600 is SU-8 photoresist;
wherein the top electrode 700 is Ti/Au metal with a thickness of 100nm-500 nm.
The embodiment provides a preparation method of a ZnO NWs sensor, which comprises the following steps:
step 1: on the insulating layer substrate 100, a layer of 50nm-200nm Mo or Au is grown by magnetron sputtering as a bottom electrode 200 of ZnO NWs, as shown in (1) of fig. 4.
Step 2: a 5nm-10nm ZnO film is grown on the bottom electrode 200 as a seed layer 300 by magnetron sputtering, as shown in (2) of fig. 4.
And step 3: transferring Al with the thickness of about 100nm-200nm on the ZnO thin film seed layer 3002O3The nanoporous material 400 is transferred to the seed layer 300 as shown in fig. 4 (3). Wherein, Al2O3The structure of the nanoporous material 400 is shown in fig. 2-3, with a pore size of 5nm-10 nm; the nanoporous material may also be TiO in some embodiments2Nanoporous materials, SnO2Nanoporous materials or SiO2A nanoporous material;
and 4, step 4: will have Al2O3Placing a sample of the nano-pore material 500 in a growth solution of ZnO NWs at 70-100 ℃ to finish Al deposition2O3A zinc oxide nanowire layer (ZnO NWs)500 is grown in the nanopores as shown in (4) of fig. 4.
And 5: soaking the grown ZnO NWs sample in a copper chloride solution to remove Al2O3As shown in fig. 4 (5).
Step 6: SU-8 photoresist is used as the material of the supporting layer 600, spin-coated around the grown ZnO NWs, and baked in air at a temperature of 240-260 ℃ for 25-50 minutes to complete the curing of the SU-8 photoresist, as shown in (6) of FIG. 4.
And 7: the excess SU-8 photoresist was removed using ICP (inductively coupled plasma) etching technique to expose ZnO NWs, as shown in (7) of fig. 4.
And 8: a layer of Ti/Au of 100nm-500nm is evaporated by electron beam evaporation as the top electrode 700 of ZnO NWs, as shown in (8) of FIG. 4.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An oxide nanowire-based pressure sensor structure, comprising:
a substrate;
a bottom electrode disposed on the substrate;
a seed layer disposed on the bottom electrode;
an oxide nanowire layer disposed on the seed layer;
a support layer disposed on the oxide nanowires; and
and the top electrode is arranged on the supporting layer.
2. Pressure sensor arrangement according to claim 1,
the material adopted by the oxide nanowire layer comprises a zinc oxide nanowire;
the thickness of the oxide nanowire layer is 100 to 200 nm.
3. Pressure sensor arrangement according to claim 1,
the substrate is made of glass or silicon oxide; a thickness of 300 to 500 μm;
the bottom electrode is made of Mo or Au, and the thickness of the bottom electrode is 50-200 nm.
4. Pressure sensor arrangement according to claim 1,
the supporting layer is made of SU-8 photoresist;
the top electrode is made of Ti/Au, and the thickness of the top electrode is 100-500 nm.
5. A method of making an oxide nanowire pressure sensor, comprising:
preparing a bottom electrode on a substrate;
preparing a seed layer on the bottom electrode;
preparing a nano-pore material on the seed layer;
preparing an oxide nanowire layer in the nanoporous material;
manufacturing a supporting layer on the oxide nanowire layer; and
and manufacturing a top electrode on the supporting layer.
6. The production method according to claim 5,
the temperature for preparing the oxide nanowire layer is 70 to 100 ℃;
in the step of preparing the nanoporous material, the nanoporous material is prepared by a transfer method;
the seed layer is made of ZnO and has a thickness of 5-10 nm.
7. The production method according to claim 5,
the method for preparing the bottom electrode comprises a magnetron sputtering method;
the method for preparing the seed layer comprises a magnetron sputtering method;
the method for preparing the supporting layer comprises a spin coating method;
the method for preparing the top electrode comprises an electron beam evaporation method.
8. The production method according to claim 5,
the material adopted by the oxide nanowire layer comprises a zinc oxide nanowire;
the thickness of the oxide nanowire layer is 100 to 200 nm.
9. The production method according to claim 5,
the pore diameter of the nano-pore material is 5-10 nm;
the nano-porous material is Al2O3Nanoporous materials, TiO2Nanoporous materials, SnO2Nanoporous Material, SiO2Any of the nanoporous materials;
the thickness of the nanoporous material is 100 to 200 nm.
10. The production method according to claim 5,
the substrate is made of glass or silicon oxide; a thickness of 300 to 500 μm;
the bottom electrode is made of Mo or Au, and the thickness of the bottom electrode is 50-200 nm;
the supporting layer is made of SU-8 photoresist;
the top electrode is made of Ti/Au, and the thickness of the top electrode is 100-500 nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241400A (en) * | 2021-04-29 | 2021-08-10 | 北京纳米能源与系统研究所 | Piezoelectric sensing device and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319372A (en) * | 2008-06-03 | 2008-12-10 | 中山大学 | Method for low temperature controllable preparation of zinc oxide nano line and application thereof |
| KR20110075400A (en) * | 2009-12-28 | 2011-07-06 | 삼성전자주식회사 | Pressure sensor using nano-wire |
| CN102468264A (en) * | 2010-11-17 | 2012-05-23 | 三星电子株式会社 | Bump structure and semiconductor package having the bump structure |
| CN103172016A (en) * | 2013-03-06 | 2013-06-26 | 浙江大学 | Preparation method of zinc oxide nano-wire pattern |
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| KR20160047290A (en) * | 2014-10-22 | 2016-05-02 | 한국과학기술원 | Manufacturing method of nanowire array piezoelectric element |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319372A (en) * | 2008-06-03 | 2008-12-10 | 中山大学 | Method for low temperature controllable preparation of zinc oxide nano line and application thereof |
| KR20110075400A (en) * | 2009-12-28 | 2011-07-06 | 삼성전자주식회사 | Pressure sensor using nano-wire |
| CN102468264A (en) * | 2010-11-17 | 2012-05-23 | 三星电子株式会社 | Bump structure and semiconductor package having the bump structure |
| CN103172016A (en) * | 2013-03-06 | 2013-06-26 | 浙江大学 | Preparation method of zinc oxide nano-wire pattern |
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| KR20160047290A (en) * | 2014-10-22 | 2016-05-02 | 한국과학기술원 | Manufacturing method of nanowire array piezoelectric element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241400A (en) * | 2021-04-29 | 2021-08-10 | 北京纳米能源与系统研究所 | Piezoelectric sensing device and preparation method thereof |
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