CN112271187A - Back-illuminated EMCCD back structure and manufacturing method thereof - Google Patents
Back-illuminated EMCCD back structure and manufacturing method thereof Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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Abstract
The invention relates to a back structure of a back-illuminated EMCCD (electron-multiplying charge coupled device) and a manufacturing method thereof.A P + layer (13) is arranged on the back of a high-resistance epitaxial silicon layer (8), and an antireflection film (14) is evaporated; a P + electrode contact area (15 b) for boron ion injection is formed on the P + layer (13), a metallized electrode (16) is arranged on the back of the EMCCD, and the metallized electrode is in contact with the P + electrode contact area; and the metal lead electrodes (6) on the front surface of the EMCCD are exposed at two sides of the antireflection film, the P + layer and the high-resistance epitaxial silicon layer. The metallized ohmic contact electrode is formed in the contact area of the metallized electrode and the P + electrode, and the low-resistance channel is introduced into the EMCCD storage area, the horizontal shift register and the back side of the multiplication register, so that the problem that the charge transfer efficiency of a millimeter-scale area array MOS unit is reduced under the clock pulse driving of a front polysilicon gate electrode after a back-illuminated EMCCD low-resistance substrate is removed is solved, the detection sensitivity of a device is improved, the process is easy to implement, and the compatibility is high.
Description
Technical Field
The invention relates to a back side structure of a back-illuminated EMCCD (electron-multiplying charge coupled device) and a manufacturing method thereof, belonging to the technical field of charge coupled devices.
Background
An EMCCD (Electron multiplying Charge Coupled device) is an all-solid-state low-light-level imaging device which improves night vision detection capability through Charge multiplication, and is a high-end photoelectric detection product with extremely high sensitivity in the detection field. The EMCCD has the characteristics of low noise, high sensitivity, high dynamic range, high quantum efficiency and the like, and has great advantages in low-light night vision.
The back-illuminated EMCCD reduces the influence of absorption and reflection of a semitransparent polycrystalline silicon electrode on the surface of a front-illuminated chip due to the fact that light is incident from the back of the chip and the thickness and the back surface of a chip substrate are subjected to process treatment, the spectral response range and the quantum efficiency of an EMCCD device can be improved, and the peak value can reach more than 90%. Therefore, in high-performance EMCCD products, a back-illuminated structure is generally adopted, and the back-illuminated technology has also been used for the preparation of CMOS image sensors.
In order to improve the light quantum conversion efficiency of the end-band light, the back-side high-concentration substrate silicon needs to be removed, and a low-doped silicon layer is left. After the back substrate is removed, due to the large (millimeter-scale) area array of the device, the delay of charges is increased under the coupling of the clock signal of the gate electrode, and the charge transfer efficiency is reduced.
Disclosure of Invention
The invention provides a back-illuminated EMCCD back structure and a manufacturing method thereof, which aim to solve the problem of low charge transfer efficiency caused by removing heavily doped substrate silicon in the EMCCD back illumination process.
The technical scheme adopted by the invention is as follows:
a back structure of a back-illuminated EMCCD comprises an existing EMCCD front-illuminated structure and mainly comprises the following parts: the front of high resistant epitaxial silicon layer is equipped with photosensitive region, storage area, horizontal shift register, multiplication district and output amplification district, positive P + contact region, positive metal lead electrode and aluminium light-shielding layer, and EMCCD shines the surface before and is equipped with silica oxide layer, its characterized in that:
the back of the high-resistance epitaxial silicon layer is provided with a P + layer, and the thickness of the P + layer is 50 nm-200 nm;
evaporating an antireflection film on the back of the P + layer;
a P + electrode contact area for boron ion injection is manufactured on the P + layer, and the P + electrode contact area covers the storage area, the horizontal shift register, the multiplication register and the output amplifier;
a metallized electrode is arranged on the back surface of the EMCCD and is in contact with the P + electrode contact area and covers the P + contact layer;
and the metal lead electrodes on the front surface of the EMCCD are exposed at two sides of the antireflection film, the P + layer and the high-resistance epitaxial silicon layer.
The invention also provides a manufacturing method of the back structure of the back-illuminated EMCCD, which comprises the following steps:
1) the EMCCD front-illuminated wafer manufactured by the front-illuminated process comprises the following steps: the high-resistance epitaxial silicon layer is arranged on the low-resistance substrate silicon layer, a photosensitive region, a storage region, a horizontal shift register, a multiplication region, an output amplification region, a front P + contact region, a front metal lead electrode and an aluminum light-shielding layer are arranged on the high-resistance epitaxial silicon layer, and the aluminum light-shielding layer covers the storage region, the horizontal shift register, the multiplication region and the output amplification region;
2) performing surface medium planarization on the front side of an EMCCD (Electron multiplying Charge coupled device) front-lighting wafer, and depositing an oxide layer with the thickness of 4-6 mu m through silicon dioxide;
3) spin coating a polymer layer (such as BCB and PI) on the surface of an oxide layer of a wafer before EMCCD (electron-multiplying charge coupled device), bonding a bonding substrate (such as a silicon wafer and a quartz wafer) through a wafer bonding process, and taking the bonding substrate as a thinned support sheet;
4) thinning the back of the EMCCD front photo wafer to remove the low-resistance layer, wherein the thickness of the residual high-resistance epitaxial silicon layer is 10-20 mu m;
5) the back of the high-resistance epitaxial silicon layer is subjected to low-energy ion boron injection, the energy is 0.2 KeV-10 KeV, the dosage is 1E 14-1E 15, then a laser annealing process is adopted, and a P + layer is formed on the back of the EMCCD and is 50 nm-200 nm thick;
6) evaporating a layer of antireflection film on the P + layer on the back of the EMCCD, wherein the material is one or the combination of hafnium dioxide, magnesium difluoride, silicon dioxide and aluminum oxide;
7) photoetching a metallized electrode contact area window on the antireflection film, etching the window to remove the antireflection film to a P + layer, wherein the electrode contact area window covers the areas of the storage area, the horizontal shift register, the multiplication register and the output amplifier, and in a boundary area between the photosensitive area and the storage area, the boundary of the contact area is 10-100 micrometers away from a pixel unit in the photosensitive area;
8) in the window of the electrode contact area, injecting boron into the window by using low-energy large-beam ions to form a P + electrode contact, wherein the P + electrode contact area extends deep into the high-resistance silicon layer, the injection energy is 10 KeV-80 KeV, and the injection dose is 1E 14-5E 15;
9) carrying out local laser annealing on the P + electrode contact area to enable the junction depth of the P + electrode contact area to be 0.15-2 microns;
10) a metal aluminum shielding layer is vapor-plated on the anti-reflection film on the back surface of the EMCCD, and the thickness of the metal aluminum shielding layer is 0.2-1 mu m;
11) photoetching and etching the metal aluminum shielding layer, wherein a formed back metallized electrode is in contact with the P + electrode contact area, and the width of the back metallized electrode covers the P + electrode contact area and exceeds 10-100 mu m;
12) photoetching the antireflection film, the P + region and the high-resistance epitaxial silicon layer on two sides to release the metal lead electrode on the front surface of the EMCCD;
13) by low temperature H2、N2Or annealing the mixed gas of the back metal electrode and the P + electrode at 150-450 ℃ for 30-120 min, repairing the damage in the technological process, and simultaneously increasing the ohmic contact characteristic of the back metal electrode and the P + electrode contact area.
In the technical scheme of the invention, the substrate metallized electrode structure is prepared by adopting the back metal light-shielding layer, and the low-resistance channel is introduced below the EMCCD storage area, the horizontal shift register and the multiplication register, so that the defects are greatly improved, the detection sensitivity of the device is improved, the process is easy to realize, and the compatibility is high.
The invention utilizes the back light shielding layer of the back side of the back-illuminated EMCCD to form a metalized ohmic contact electrode with silicon, and utilizes the processes of photoetching, etching, ion injection, laser annealing and the like to realize the metalized ohmic contact electrode, and low-resistance channels are introduced into the back sides of the EMCCD storage area, the horizontal shift register and the multiplication register, so that the charge transfer efficiency under the clock pulse driving of the front side polysilicon gate electrode is improved. After the front process of the EMCCD is finished, wafer-level bonding is carried out, then the EMCCD wafer is thinned, heavily doped substrate silicon is removed, then a back self-electric field building region is formed by adopting low-energy ion implantation and laser annealing, a layer of antireflection film is evaporated on the back of the EMCCD by adopting an electron beam evaporation process, a storage region, a horizontal shift register and an antireflection film on the back of a multiplication register are removed by adopting a photoetching and etching process, then P + ion implantation and local laser annealing are carried out, an aluminum shielding layer is evaporated, a light shielding region is defined by a photoetching and etching process, a back metallized electrode is formed at the same time, a metal pressure welding region is released by adopting the photoetching and etching process, and the preparation of.
The invention utilizes the back light shielding layer 16 of the back side of the back-illuminated EMCCD and the P + doped silicon 15b to form a metalized ohmic contact electrode, and introduces low-resistance channels at the back sides of the EMCCD storage area, the horizontal shift register and the multiplication register, thereby solving the problem that after the back-illuminated EMCCD low-resistance substrate 9 is removed, the charge transfer efficiency of a millimeter-scale area array MOS unit is reduced under the clock pulse driving of a front polysilicon gate electrode, thereby improving the detection sensitivity of the device, and simultaneously, the process is easy to realize and has high compatibility.
Drawings
FIG. 1 is a cross-sectional view of an EMCCD wafer with a pre-illumination process completed;
FIG. 2 is a cross-sectional view of an EMCCD front side media after planarization;
FIG. 3 is a cross-sectional view of a bonded substrate after bonding with a front side dielectric;
FIG. 4 is a cross-sectional view of an EMCCD wafer after the backside has been thinned;
FIG. 5 is a cross-sectional view after backside P + layer formation;
FIG. 6 is a cross-sectional view after formation of a back antireflection film;
FIG. 7 is a cross-sectional view after formation of a P + contact window;
FIG. 8 is a cross-sectional view after implantation of a P + contact region;
FIG. 9 is a cross-sectional view of a P + contact region after annealing activation;
FIG. 10 is a cross-sectional view after formation of a backside metal shield layer;
FIG. 11 is a cross-sectional view after formation of a back side metallized electrode;
fig. 12 is a cross-sectional view of the EMCCD front metal pad after release.
Detailed Description
After the front process of the EMCCD chip is completed, the back structure is manufactured according to the following specific detailed steps:
1) the EMCCD wafer after the front lighting process is shown in FIG. 1, wherein 1 is a photosensitive region, 2 is a storage region, 3 is a horizontal shift register, 4 is a multiplication region and an output amplification region, 5 is a front P + contact region, 6 is a front metal lead electrode, 7 is an aluminum light shielding layer, 8 is a high-resistance epitaxial silicon layer, and 9 is a low-resistance substrate silicon layer;
2) as shown in fig. 2, the surface medium planarization is carried out on the wafer before the EMCCD, the surface steps are reduced through the silicon dioxide deposition and chemical mechanical polishing process, and the thickness of an oxide layer 10 on the surface of the EMCCD wafer is 4-6 μm;
3) as shown in fig. 3, bonding is completed between an EMCCD front-illuminated wafer and a bonding substrate 12 (e.g., a silicon wafer or a quartz wafer) through a polymer layer 11 (e.g., BCB or PI) wafer bonding process, the thickness of the polymer layer 11 is 3 μm to 5 μm, and the bonding substrate 12 is used as a thinned support sheet;
4) as shown in fig. 4, thinning the back low-resistance layer 9 of the EMCCD wafer, removing the low-resistance layer, and leaving the high-resistance epitaxial silicon layer 8 with a thickness of 10 μm to 20 μm;
5) as shown in fig. 5, boron is implanted by adopting low-energy ions, the energy is 0.2 KeV-10 KeV, the dosage is 1E 14-1E 15, then a laser annealing process is adopted, a P + region 13 is formed on the back of the EMCCD, and the thickness is 50 nm-200 nm;
6) as shown in fig. 6, a layer of antireflection film 14 is evaporated on the back of the EMCCD, and the material is one or a combination of hafnium oxide, magnesium difluoride, silicon dioxide and aluminum oxide;
7) as shown in fig. 7, a back metallized electrode contact area window 15a is etched, the antireflection film is etched and removed to the silicon layer, the electrode contact area window covers a storage area, a horizontal shift register, a multiplication register, an output amplifier and other areas, in a boundary area between a photosensitive area and the storage area, the boundary of the contact area is 10-100 microns away from a pixel unit in the photosensitive area, and the antireflection film is etched and stopped on the silicon layer;
8) as shown in fig. 8, boron is implanted into the P + electrode contact region 15b by low-energy large-beam ion implantation with an implantation energy of 10KeV to 80KeV and an implantation dose of 1E14 to 5E 15;
9) as shown in fig. 9, local laser annealing is performed on the P + electrode contact region 15b, and the junction depth is 0.15 μm to 2 μm;
10) as shown in FIG. 10, a metal aluminum shielding layer 16a is deposited on the back of the EMCCD, and the thickness is 0.2 μm to 1 μm;
11) as shown in fig. 11, a back light shielding layer and a back metallized electrode 16 are formed by photolithography and etching, and the metallized electrode 16 covers the P + electrode contact region 15b and exceeds 10 μm to 100 μm;
12) as shown in fig. 12, the antireflection film 14, the P + region 13 and the high-resistance epitaxial silicon layer 8 are etched by lithography, and the EMCCD front metal pressure welding region 6 is released;
13) by low temperature H2、N2Or annealing the mixed gas of the back metal electrode and the P + electrode at 150-450 ℃ for 30-120 min, repairing the damage in the technological process, and simultaneously increasing the ohmic contact characteristic of the back metal electrode 16 and the P + electrode contact area 15 b.
Claims (2)
1. A back structure of a back-illuminated EMCCD comprises an existing EMCCD front-illuminated structure and mainly comprises the following parts: the preceding photosensitive region (1), storage area (2), horizontal shift register (3), multiplication district and output amplification district (4), positive P + contact zone (5), positive metal lead electrode (6) and aluminium light-shielding layer (7) that are equipped with of high resistant epitaxial silicon layer (8), it is equipped with silica oxide layer (10), its characterized in that to shine the surface before the EMCCD:
the back of the high-resistance epitaxial silicon layer (8) is provided with a P + layer (13) with the thickness of 50 nm-200 nm;
a layer of antireflection film (14) is evaporated on the back of the P + layer (13);
a P + electrode contact area (15 b) for boron ion injection is arranged on the P + layer (13), and the P + electrode contact area (15 b) covers the storage area (2), the horizontal shift register (3), the multiplication register (4) and the output amplifier;
a metallized electrode (16) is arranged on the back surface of the EMCCD, is in contact with the P + electrode contact area (15 b) and covers the P + contact layer (15 b);
the metal lead electrodes (6) on the front surface of the EMCCD are exposed at two sides of the antireflection film (14), the P + layer (13) and the high-resistance epitaxial silicon layer (8).
2. The manufacturing method for realizing the back surface structure of the back-illuminated EMCCD of claim 1 comprises the following steps:
1) the EMCCD front-illuminated wafer manufactured by the front-illuminated process comprises the following steps: the high-resistance epitaxial silicon wafer comprises a low-resistance substrate silicon layer (9), wherein a high-resistance epitaxial silicon layer (8) is arranged on the low-resistance substrate silicon layer (9), a photosensitive region (1), a storage region (2), a horizontal shift register (3), a multiplication region and output amplification region (4), a front P + contact region (5) and a front metal lead electrode (6) are arranged on the high-resistance epitaxial silicon layer (8), and an aluminum light shielding layer (7) is arranged and covers the storage region (2), the horizontal shift register (3), the multiplication region and the output amplification region (4);
2) performing surface medium planarization on the front side of an EMCCD (Electron multiplying Charge coupled device) wafer, and depositing an oxide layer (10) by silicon dioxide to obtain a thickness of 4-6 microns;
3) coating a polymer layer (11) on the surface of an oxide layer (10) of a wafer in front of an EMCCD (electron-multiplying charge coupled device), bonding a bonding substrate (12) on the polymer layer (11) through a wafer bonding process, and taking the bonding substrate as a thinned supporting sheet;
4) the back of the EMCCD front photo wafer is thinned to remove the low-resistance layer (9), and the thickness of the residual high-resistance epitaxial silicon layer (8) is 10-20 microns;
5) the back of the high-resistance epitaxial silicon layer (8) is subjected to low-energy ion boron injection, the energy is 0.2 KeV-10 KeV, the dosage is 1E 14-1E 15, then a laser annealing process is adopted, and a P + layer (13) with the thickness of 50 nm-200 nm is formed on the back of the EMCCD;
6) evaporating a layer of antireflection film (14) on the P + layer (13) on the back of the EMCCD, wherein the material is one or the combination of hafnium dioxide, magnesium difluoride, silicon dioxide and aluminum oxide;
7) a window (15 a) of an etched metallized electrode contact area on the antireflection film (14) is etched to remove the antireflection film to the P + layer (13), the window of the electrode contact area covers areas such as a storage area, a horizontal shift register, a multiplication register and an output amplifier, and in a boundary area between the photosensitive area and the storage area, the boundary of the contact area is 10-100 micrometers away from a pixel unit of the photosensitive area;
8) in the electrode contact area window (15 a), low-energy large-beam ion implantation is performed on boron to form a P + electrode contact (15 b), the P + electrode contact area (15 b) extends deep into the high-resistance silicon layer 8, the implantation energy is 10 KeV-80 KeV, and the implantation dose is 1E 14-5E 15;
9) carrying out local laser annealing on the P + electrode contact area (15 b) to enable the junction depth of the P + electrode contact area (15 b) to be 0.15-2 mu m;
10) a metal aluminum shielding layer (16 a) is evaporated on the EMCCD back antireflection film (14) and has the thickness of 0.2-1 mu m;
11) photoetching and etching the metal aluminum shielding layer (16 a), wherein a formed back metallization electrode (16) is in contact with the P + electrode contact area (15 b), and the back metallization electrode (16) covers the P + electrode contact area (15 b) in width and exceeds 10-100 mu m;
12) photoetching the antireflection film (14), the P + region (13) and the high-resistance epitaxial silicon layer (8) on two sides to release the metal lead electrode (6) on the front surface of the EMCCD;
13) by low temperature H2、N2Or annealing the mixed gas of the back metal electrode and the P + electrode at 150-450 ℃ for 30-120 min, repairing the damage in the technological process, and simultaneously increasing the ohmic contact characteristic of the back metal electrode (16) and the P + electrode contact area (15 b).
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113441A (en) * | 2021-04-13 | 2021-07-13 | 中国电子科技集团公司第四十四研究所 | Back-illuminated CCD structure capable of avoiding stray signals at edge |
Citations (3)
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| US20070176213A1 (en) * | 2006-01-31 | 2007-08-02 | Sanyo Electric Co., Ltd. | Imaging device |
| US20110303822A1 (en) * | 2010-06-15 | 2011-12-15 | E2V Semiconductors | Electron multiplication image sensor and corresponding method |
| CN106847852A (en) * | 2017-03-27 | 2017-06-13 | 北方电子研究院安徽有限公司 | A kind of backside structure of electron multiplying charge coupled apparatus and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113113441A (en) * | 2021-04-13 | 2021-07-13 | 中国电子科技集团公司第四十四研究所 | Back-illuminated CCD structure capable of avoiding stray signals at edge |
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