CN112261326B - Infrared remote sensor based on photon information digital accumulation overlong TDI - Google Patents
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- 238000009825 accumulation Methods 0.000 title claims abstract description 56
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- 238000009826 distribution Methods 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 22
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 8
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 8
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to an infrared remote sensor based on photon information digital accumulation overlong TDI, which comprises: the lens module converges the received infrared signal to a detector; the TDI type detector converts an infrared signal into a photocurrent, photon information digital accumulation is carried out on a single pixel by using a counter to convert the photocurrent into a digital signal, and the numerical value loaded into a previous-stage counter by the counter when a next pixel starts to count is used as an initial value to carry out digital accumulation, so that the digital signal accumulation of a plurality of pixels is completed; the signal processing module corrects and codes the digital signal to generate image data; the data storage module records, stores and displays the image data; the refrigeration module is used for refrigerating the detector arranged on the cold finger of the refrigeration module; the power supply and distribution module supplies power to each module; the comprehensive information processing module controls the power supply and distribution module to power on each module; the temperature control module is used for heating control of the lens module.
Description
Technical Field
The invention relates to an infrared remote sensor based on photon information digital accumulation ultra-long TDI, which is mainly applied to the field of weak temperature difference target infrared remote sensing detection application under a strong radiation background, is particularly suitable for the condition that a long-wave infrared spectrum band needs kilomega-order charge handling capacity to realize high radiation sensitivity remote sensing detection, and belongs to the technical field of target infrared remote sensing detection
Background
A typical NETD of the existing long-wave line array infrared detector assembly is between 40mK and 50 mK. The long-wave detector has larger background current, but the integrating capacitor cannot be made to be large due to the limitation of the area of a pixel, the conventional reading circuit directly integrates the photoelectric current by using the integrating capacitor, and the capacitor is extremely easy to saturate, so that the integrating time is shorter, the processable charge amount is less, and the detection sensitivity requirement of a system cannot be met. Therefore, the main approach for improving the sensitivity of the long-wave infrared remote sensor is to prolong the integration time and improve the signal charge processing capability.
The TDI system is a method which is commonly used at home and abroad and is used for prolonging the integration time of a space-based remote sensor so as to improve the radiation sensitivity. In the traditional TDI system circuit, the range of TDI is limited to 12-16 stages due to the influence of layout parasitic. Meanwhile, the scale of a horizontal circuit of the existing silicon manufacturing process is rapidly increased, the power consumption is synchronously increased, and because the ultra-long TDI type remote sensor based on the photon signal digital accumulation system adopts digital signals for accumulation among pixels, the parasitic effect is effectively avoided, the TDI series can be greatly increased, the sensitivity of the remote sensor is further improved, and in addition, the infrared remote sensor based on the photon information digital accumulation system ultra-long TDI has small circuit scale change along with the increase of the TDI series, and the power consumption is not obviously increased.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the infrared remote sensor overcomes the defects of the prior art, provides the infrared remote sensor based on photon information digital accumulation ultralong TDI, realizes the very high sensitivity infrared remote sensor with noise equivalent temperature difference NETD superior to 3mK, and meets the requirement of the very high radiation sensitivity of the infrared remote sensor under different application backgrounds.
The technical solution of the invention is as follows: an infrared remote sensor based on photon information digital accumulation ultra-long TDI comprises a lens module, a TDI type detector, a refrigeration module, a signal processing module, a temperature control module, a power supply and distribution module, a comprehensive information processing module and a data storage module;
the lens module receives an infrared signal of a target or a background and converges the infrared signal on the TDI type detector;
the TDI type detector samples an infrared signal of a target or a background and converts the infrared signal into a photocurrent, photon information digital accumulation is carried out on a single pixel by using a counter to convert the photocurrent into a digital signal, and the numerical value loaded into a previous-stage counter by the counter is taken as an initial value to carry out digital accumulation when a next pixel starts to count, so that the digital signal accumulation of a plurality of pixels is completed;
the signal processing module corrects and codes the digital signal generated by the TDI type detector, and then sends the image data generated after correction and coding to the data storage module; the data storage module records, stores and displays the image data;
the refrigeration module refrigerates the TDI type detector arranged on the cold finger of the refrigeration module; meanwhile, the cold finger measures the temperature of the TDI type detector in real time and feeds back temperature information to the comprehensive information processing module;
the power supply and distribution module supplies power to the refrigeration module, the TDI type detector, the signal processing module, the temperature control module and the data storage module under the control of the comprehensive information processing module;
the comprehensive information processing module firstly controls the power supply and distribution module to power on the refrigeration module, the signal processing module, the temperature control module and the data storage module, and controls the power supply and distribution module to supply power to the detector when the comprehensive information processing module receives the TDI type detector temperature fed back by the cold finger and reaches the specified temperature; the comprehensive information processor reads the telemetering data of the temperature control module, judges whether the temperature of the lens module reaches the specified temperature or not according to the temperature data of the lens module in the telemetering data, and controls the temperature control module to heat the lens module if the temperature of the lens module does not reach the specified temperature; the comprehensive information processing module controls the data storage device to store the image data.
The TDI type detector comprises a digital circuit and an analog circuit; the analog circuit comprises a comparator and an integrating capacitor C d The mercury cadmium telluride detector chip comprises a mercury cadmium telluride detector chip and a feedback circuit; the digital circuit comprises a shift register, a counter and a control logic device;
the mercury cadmium telluride detector chip converts the received target or background signal into photocurrent, and outputs the photocurrent to an integrating capacitor C d One terminal of (A) is an integrating capacitor (C) d Discharge, integral capacitance C d The other end of the second switch is grounded; integrating capacitor C d Discharge so as to be connected with the integrating capacitor C d Positive input end V of comparator with one end connected simultaneously d The comparator will drop the potential of V d Potential of and reference terminal V ref When V is compared with the potential of d Potential lower than V ref When the voltage is at a potential, the comparator outputs high level, and the high level is fed back by the feedback circuit to enable V d Is reset to a reset voltage V dd The detector restarts a new round of integration; meanwhile, the output end of the comparator is connected with the counter, when the comparator outputs high level, the counter carries out 1-time accumulation counting, accumulated digital signals are output to the next-stage pixel through the shift register as the initial value of the counter after multiple times of accumulation, the operations are repeated until the accumulation of all the stages of pixels is completed, and then the digital signals are output to the signal processing module through the shift register; the control logic device provides enable signals for the counter and the shift register, judges whether the digital accumulation is finished or not, and controls the comparator to stop working if the digital accumulation is finished.
The counter is a counter capable of setting an initial value function, and when the digital accumulation of the pixel photon information begins, the numerical value of the previous-stage pixel counter is loaded as the initial value of the counter.
The TDI type detector integrating capacitor C d Maximum charge handling capacity Q whose value is required to meet the requirements max A maximum number m of quantization bits of the counter, and a combined reset voltage V dd Comparator reference voltage V ref Is determined by the following formula:
wherein q is the unit charge capacity; q max Is the charge handling capacity, V dd Is a reset voltage, V ref Is comparator reference voltage, m is quantization bit number, TDI num Is a detector TDI stage.
The noise model of the infrared remote sensor based on photon information digital accumulation ultralong TDI comprises detector main noise, quantization noise, reset noise and comparator noise, and is specifically represented as follows:
wherein σ 2 total N is the main noise electron number of the remote sensor,
in order to quantify the number of noisy electrons,
for reset noise and comparator noise, m is the maximum quantization bit of the counter, C d Is an integrating capacitance, V ref Q is the amount of single electron charge, t, for a reference voltage num For single-stage integration of the accumulated times, TDI num Is TDI series, k is Boltzmann constant, T is detector working temperature, e comp A noise voltage is input to the comparator.
When load design is carried out, the sum of the quantization noise electronic number, the reset noise and the comparator noise electronic number is far smaller than the main noise electronic number N of the remote sensor, namely:
where M is a constraint coefficient, M should be less than 0.1.
The refrigeration module refrigerates the TDI type detector at 70K +/-5K when the TDI type detector works, and is used for ensuring the normal work of the detector.
The refrigeration module adopts a pulse tube refrigerator or a Stirling refrigerator.
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention adopts a new system TDI type detector, a detector reading circuit adopts a pixel level photoelectric conversion digitalization method, a charge packet counting mode is adopted, a counter is used for processing signals, an integrating capacitor only plays a role of voltage-frequency conversion, and the quantification of photoelectron signals is completed through the accumulation of a plurality of charge packets. The TDI circuit is also at a pixel level, and the value of a pixel counter at the previous level is loaded before each counting as the initial value of the counter, so that the accumulation of signals among pixels is completed. Considering the different application backgrounds of remote sensors, the required radiation sensitivity is different, and the sensitivity can be adaptively expanded through the TDI series setting so as to meet different application requirements.
(2) Compared with the prior art that the TDI system is adopted to improve the signal-to-noise ratio, the sensing circuit of the invention has simple scale and can effectively avoid parasitic effect. From the limitation of all conditions at present, the limit of the conventional TDI series is about between 12 and 16, the improvement capability of the conventional TDI series on the signal to noise ratio is very limited, and the limit is not better than 10mK. The detection spectrum of the invention is 8-10 μm, TDI level can exceed 100 level, charge handling capacity reaches dozens of Ge-, NETD is superior to 3mK, and the detection requirement of very high sensitivity can be met.
(3) Compared with the prior infrared remote sensor technology, the invention reasonably sets the number of the counter and the TDI series aiming at the high dynamic characteristic of the infrared signal, and can realize the infrared imaging detection in a large dynamic range.
(4) Compared with the traditional TDI, the TDI in the invention can select any column for accumulation, and can adapt to different application requirements.
Drawings
FIG. 1 is a block diagram of the system of the present invention;
FIG. 2 is a diagram of an arrangement of photosensitive elements of the detector of the present invention;
FIG. 3 is a schematic diagram of the pixel level readout circuitry of the detector of the present invention;
fig. 4 is a schematic view of the working principle of the detector of the new system of the present invention.
Detailed Description
The working principle and working process of the present invention will be further explained and explained with reference to the accompanying drawings.
The infrared remote sensor based on the ultra-long TDI of the photon information digital accumulation system can identify and detect the weak temperature difference target under the background of strong radiation of a long-wave infrared spectrum band.
As shown in fig. 1, the infrared remote sensor based on photon information digital accumulation ultralong TDI of the present invention includes: the system comprises a lens module, a TDI type detector, a refrigeration module, a signal processing module, a temperature control module, a power supply and distribution module, a comprehensive information processing module and a data storage module;
the lens module receives the target/background infrared signal and converges the target/background infrared signal to the photon information digital accumulation system ultra-long TDI type detector;
as shown in fig. 2, a TDI type detector samples a target/background infrared signal and converts the sampled signal into a photocurrent, and performs photon information digital accumulation on a single pixel by using a counter to convert the photocurrent into a digital signal, the detector performs TDI in a scanning direction, and the counter loads the numerical value of the last row of counters as an initial value when the next pixel starts counting to perform digital accumulation, thereby completing the digital signal accumulation of a plurality of pixels;
as shown in fig. 3 and 4, the detector comprises a digital circuit and an analog circuit; the analog circuit comprises a comparator and an integrating capacitor C d The mercury cadmium telluride detector chip comprises a mercury cadmium telluride detector chip and a feedback circuit; the digital circuit also comprises a shift register, a counter and a control logic device;
the mercury cadmium telluride detector chip converts the received target/background signal into photocurrent, and outputs the photocurrent to the integrating capacitor C d One terminal of (A) is an integrating capacitor (C) d Discharge, integral capacitance C d The other end of the second switch is grounded; integrating capacitor C d Discharge so as to be connected with the integrating capacitor C d Positive input end V of comparator with one end connected simultaneously d The comparator will drop the potential of V d Potential of (2) and reference terminal V ref Potential progression ratio ofWhen V is smaller than d Potential lower than V ref When the voltage is at a potential, the comparator outputs a high level which is fed back by the feedback circuit to enable V d Is reset to a reset voltage V dd The detector restarts a new round of integration; meanwhile, the output end of the comparator is connected with the counter, when the comparator outputs a high level, the counter performs 1-time accumulation counting, accumulated digital signals are output to the next-stage pixel through the shift register as the initial value of the counter after multiple times of accumulation, the steps are repeated until the accumulation of all the stages of pixels is completed, and then the digital signals are output to the signal processing module through the shift register; the control logic device provides enable signals for the counter and the shift register, judges whether the digital accumulation is finished or not, and controls the comparator to stop working if the digital accumulation is finished.
The TDI type detector charge handling capacity is the total number of integrations of the shift register output times the reference signal charge amount times the TDI number.
Q max ＝ΔQ×t num ×TDI num
Wherein Q is max Is the TDI detector charge handling capacity, Δ Q is the reference signal charge amount, t num Is the number of single-stage integration and accumulation, TDI num Is the total TDI stage of the detector.
Integrating capacitor C d Maximum charge handling capacity Q whose value is required to meet the requirements max The maximum quantization bit number m of the counter, and the combined reset voltage V dd Comparator reference voltage V ref Is determined by the following formula:
wherein q is the unit charge capacity. Q max For charge handling, take V dd Is a reset voltage, comparator reference voltage V ref M is the number of quantization bits, TDI num For detector TDI series, calculating related parameters to obtain a code C d 。
The signal processing module corrects and codes the digital signal generated by the detector, and then sends the image data generated after correction and coding to the data storage module; the data storage module records, stores and displays the image data;
the refrigeration module is used for refrigerating a detector arranged on a cold finger of the refrigeration module, the refrigeration is 70K +/-5K when the detector works so as to ensure the normal work of the detector, and meanwhile, the cold finger is used for measuring the temperature of the detector in real time and feeding temperature information back to the comprehensive processor; the refrigerating mold adopts a pulse tube refrigerator of the physical and chemical institute of Chinese academy of sciences, and the design of the refrigerator can refer to the text of research on ultrahigh frequency coaxial pulse tube refrigerators of Xuna, chen-Hei, liao and the like.
The power supply and distribution module supplies power to the refrigeration module, the detector, the signal processing module, the temperature control module and the data storage module under the control of the comprehensive information processing module;
the comprehensive information processing module firstly controls the power supply and distribution module to power on the refrigeration module, the signal processing module, the temperature control module and the data storage module, and when the comprehensive information processing module receives the temperature of the detector fed back by the cold finger and reaches the specified temperature, the comprehensive information processing module controls the power supply and distribution module to supply power to the detector; the comprehensive information processing module reads the telemetering data of the temperature control module, judges whether the lens module reaches the instruction temperature or not according to the lens module temperature data in the telemetering data, and controls the temperature control module to heat the lens module if the lens module does not reach the instruction temperature; the comprehensive information processing module controls the data storage device to store the image data.
The temperature control module is used for heating control of the lens module under the control of the comprehensive information processing module. The temperature control module consists of an electric heating sheet, and the electric heating sheet is attached to the outer wall of the lens module; the electric heating pieces are selected from different numbers according to the temperature control requirement of the lens module and are reasonably distributed.
The signal-to-noise ratio of the new system remote sensor adopted by the invention can reach 89dB, the NETD is superior to the excellent effect of 3mK, the noise model is different from the traditional system remote sensor, and the theoretical analysis is as follows:
the noise model of the remote sensor mainly includes the detector main noise, quantization noise, reset noise and comparator noise, as shown in the following formula:
wherein σ 2 total N is the main noise electron number of the remote sensor,
in order to quantify the number of noise electrons,
for reset noise and comparator noise, m is the maximum quantization bit of the counter, C d Is an integrating capacitance, V ref Q is the amount of single electron charge, t, for a reference voltage num Is the number of single-stage integration and accumulation, TDI num Is TDI series, k is Boltzmann constant, T is detector working temperature, e comp A noise voltage is input to the comparator.
When load design is carried out, the sum of the quantization noise electronic number, the reset noise and the comparator noise electronic number is far smaller than the main noise electronic number N of the remote sensor, namely:
where M is a constraint coefficient, M should be less than 0.1.
TDI at a charge handling capacity of 3Ge- num Is 30 times, t num Is 1100 times. The total noise electron number is calculated to be 101000e-, the signal-to-noise ratio is 89dB, and NETD is better than 3mK.
Those skilled in the art will appreciate that the invention may be practiced without these specific details.
Claims (8)
1. An infrared remote sensor based on photon information digital accumulation overlong TDI is characterized in that: the system comprises a lens module, a TDI type detector, a refrigeration module, a signal processing module, a temperature control module, a power supply and distribution module, a comprehensive information processing module and a data storage module;
the lens module receives an infrared signal of a target or a background and converges the infrared signal on the TDI type detector;
the TDI type detector samples an infrared signal of a target or a background and converts the infrared signal into a photocurrent, photon information digital accumulation is carried out on a single pixel by using a counter to convert the photocurrent into a digital signal, and the numerical value loaded into a previous-stage counter by the counter is taken as an initial value to carry out digital accumulation when a next pixel starts to count, so that the digital signal accumulation of a plurality of pixels is completed;
the signal processing module is used for correcting and coding the digital signal generated by the TDI type detector and then sending image data generated after correction and coding into the data storage module; the data storage module records, stores and displays the image data;
the refrigeration module refrigerates the TDI type detector arranged on the cold finger of the refrigeration module; meanwhile, the cold finger measures the temperature of the TDI type detector in real time and feeds the temperature information back to the comprehensive information processing module;
the power supply and distribution module supplies power to the refrigeration module, the TDI type detector, the signal processing module, the temperature control module and the data storage module under the control of the comprehensive information processing module;
the comprehensive information processing module firstly controls the power supply and distribution module to power on the refrigeration module, the signal processing module, the temperature control module and the data storage module, and controls the power supply and distribution module to supply power to the detector when the comprehensive information processing module receives the TDI type detector temperature fed back by the cold finger and reaches the specified temperature; the comprehensive information processor reads the telemetering data of the temperature control module, judges whether the temperature of the lens module reaches the specified temperature or not according to the temperature data of the lens module in the telemetering data, and controls the temperature control module to heat the lens module if the temperature of the lens module does not reach the specified temperature; the comprehensive information processing module controls the data storage device to store the image data.
2. The infrared remote sensor based on photon information digital accumulation overlong TDI according to claim 1, characterized in that: the TDI type detector comprises a digital circuit and an analog circuitA way; the analog circuit comprises a comparator and an integrating capacitor C d The mercury cadmium telluride detector chip and the feedback circuit; the digital circuit comprises a shift register, a counter and a control logic device;
the mercury cadmium telluride detector chip converts the received target or background signal into photocurrent, and outputs the photocurrent to the integrating capacitor C d One terminal of (A) is an integrating capacitor (C) d Discharge, integral capacitance C d The other end of the second switch is grounded; integrating capacitor C d Discharging to make it contact with the integrating capacitor C d Positive input end V of comparator with one end connected simultaneously d The comparator will drop the potential of V d Potential of and reference terminal V ref When V is compared with the potential of d Potential lower than V ref When the voltage is at a potential, the comparator outputs a high level which is fed back by the feedback circuit to enable V d Is reset to a reset voltage V dd The detector restarts a new round of integration; meanwhile, the output end of the comparator is connected with the counter, when the comparator outputs a high level, the counter performs 1-time accumulation counting, accumulated digital signals are output to the next-stage pixel through the shift register as the initial value of the counter after multiple times of accumulation, the operation is repeated until the accumulation of all the stages of pixels is completed, and then the digital signals are output to the signal processing module through the shift register; the control logic device provides enable signals for the counter and the shift register, judges whether the digital accumulation is finished or not, and controls the comparator to stop working if the digital accumulation is finished.
3. The infrared remote sensor based on photon information digital accumulation overlong TDI of claim 1, wherein: the counter is a counter capable of setting an initial value function, and when the digital accumulation of the pixel photon information begins, the numerical value of the previous-stage pixel counter is loaded as the initial value of the counter.
4. The infrared remote sensor based on photon information digital accumulation overlong TDI of claim 2, wherein: the TDI type detector integrating capacitor C d Maximum charge handling capacity Q whose value is required to meet the requirements max Maximum counterThe number m of bits, and the combined reset voltage V dd Comparator reference voltage V ref The following values are used together, and are shown in the following formula:
wherein q is the unit charge capacity; q max Is the charge handling capacity, V dd Is a reset voltage, V ref Is comparator reference voltage, m is quantization bit number, TDI num Is a detector TDI stage.
5. The infrared remote sensor based on photon information digital accumulation overlong TDI of claim 1, wherein: the noise model of the infrared remote sensor based on photon information digital accumulation ultralong TDI comprises detector main noise, quantization noise, reset noise and comparator noise, and is specifically represented as follows:
wherein σ 2 total N is the main noise electron number of the remote sensor,
in order to quantify the number of noise electrons,
for reset noise and comparator noise, m is the maximum quantization bit of the counter, C d Is an integrating capacitance, V ref Q is the amount of single electron charge, t, for a reference voltage num For single-stage integration of the accumulated times, TDI num Is TDI series, k is Boltzmann constant, T is detector working temperature, e comp A noise voltage is input to the comparator.
6. The infrared remote sensor based on photon information digital accumulation overlong TDI of claim 5, wherein: when load design is carried out, the sum of the quantization noise electronic number, the reset noise and the comparator noise electronic number is far less than the main noise electronic number N of the remote sensor, namely:
where M is a constraint coefficient, M should be less than 0.1.
7. The infrared remote sensor based on photon information digital accumulation ultralong TDI according to any one of claims 1-6, characterized in that: the refrigeration module refrigerates the TDI type detector at 70K +/-5K when the TDI type detector works, and is used for ensuring the normal work of the detector.
8. The infrared remote sensor based on photon information digital accumulation overlong TDI of any one of claims 1-6, wherein: the refrigeration module adopts a pulse tube refrigerator or a Stirling refrigerator.
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| Publication number | Priority date | Publication date | Assignee | Title |
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