CN112260671B - Integrated radio frequency switch with gate voltage rebalancing - Google Patents
Integrated radio frequency switch with gate voltage rebalancing Download PDFInfo
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- CN112260671B CN112260671B CN202011421819.7A CN202011421819A CN112260671B CN 112260671 B CN112260671 B CN 112260671B CN 202011421819 A CN202011421819 A CN 202011421819A CN 112260671 B CN112260671 B CN 112260671B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention provides an integrated radio frequency switch with rebalanced grid voltage, which relates to the field of semiconductor devices and comprises a plurality of single-stage switch devices connected in series, wherein each single-stage switch device comprises a field effect transistor, a grid resistor and a first equivalent capacitor structure; the drain electrode of field effect transistor is the high impedance end of place single stage switch device, and the source electrode of field effect transistor is the low impedance end of place single stage switch device, and two adjacent single stage switch device's high impedance end and low impedance end are connected for keep apart radio frequency signal the one end of grid resistance is the control end, the other end of grid resistance is connected with the field effect transistor grid of place single stage switch device, first equivalent capacitance structure is used for balancing place single stage switch device's grid voltage, and in all single stage switch devices, the mounted position of first equivalent capacitance structure is unanimous. The equivalent capacitor structure is used for balancing grid voltage, and the pressure bearing capacity of the switch circuit is improved and the application reliability is ensured by increasing the equivalent capacitor structure.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an integrated radio frequency switch with gate voltage rebalancing.
Background
With the development of science and technology, semiconductor devices are increasingly widely used due to their own characteristic advantages. The voltage bearing capability of the integrated radio frequency switch with the gate voltage rebalanced is important, and in the actual application process, if the integrated radio frequency switch is broken down due to insufficient bearing capability, the reliability of application is affected.
The research of the inventor finds that the field effect transistor has poor voltage bearing capability and cannot achieve the optimal effect due to the self reason.
Disclosure of Invention
In view of the above, the present invention provides an integrated rf switch with gate voltage rebalancing, which improves the voltage-bearing capability of the switch circuit by adding an equivalent capacitor structure, and ensures the application reliability.
In a first aspect, an embodiment of the present invention provides an integrated radio frequency switch with gate voltage rebalancing, including a plurality of single-stage switching devices connected in series, where the single-stage switching devices include a field effect transistor, a gate resistor, and a first equivalent capacitor structure;
the drain electrode of the field effect tube is a high impedance end of the single-stage switch device, the source electrode of the field effect tube is a low impedance end of the single-stage switch device, the high impedance ends and the low impedance ends of two adjacent single-stage switch devices are connected, the high impedance end of the single-stage switch device at the foremost end is a signal input end of the integrated radio frequency switch, and the low impedance end of the single-stage switch device at the rearmost end is grounded;
the first equivalent capacitor structure is used for balancing grid voltage of the single-stage switch device, and the installation positions of the first equivalent capacitor structure are consistent in all the single-stage switch devices.
In some embodiments, the first equivalent capacitor structure includes a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
In some embodiments, one end of the first equivalent capacitor structure is connected to the gate of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor structure is connected to the drain of the single-stage switching device field effect transistor.
In some embodiments, one end of the first equivalent capacitor structure is connected to the gate of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor structure is connected to the source of the single-stage switching device field effect transistor.
In some embodiments, the first equivalent capacitance structure comprises a first equivalent capacitance and a second equivalent capacitance:
one end of the first equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the second equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor.
In some embodiments, the integrated radio frequency switch comprises a first switching device, a second switching device, and a third switching device;
the high impedance end of the first switch device is a signal input end, the low impedance end of the first switch device is connected with the high impedance end of the second switch device, the low impedance end of the second switch device is connected with the high impedance end of the third switch device, and the low impedance end of the third switch device is grounded.
In some embodiments, the fet further includes a body electrode, and the single-stage switching device in which the fet is located further includes a second equivalent capacitor structure for balancing the body electrode voltage.
In some embodiments, one end of the second equivalent capacitor structure is connected to the body of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor structure is connected to the drain of the single-stage switching device field effect transistor.
In some embodiments, one end of the second equivalent capacitor structure is connected to the body of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor structure is connected to the source of the single-stage switching device field effect transistor.
In some embodiments, the second equivalent capacitive structure comprises a third equivalent capacitance and a fourth equivalent capacitance:
one end of the third equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the third equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the fourth equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the fourth equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor.
The embodiment of the invention provides an integrated radio frequency switch with rebalanced grid voltage, which cancels the effect of parasitic capacitance to the ground brought by grid resistance by adding an equivalent capacitance structure for balancing the grid voltage, and maintains the radio frequency voltage of a grid at the middle of a drain electrode and a source electrode, thereby improving the integral pressure bearing capacity of a switch circuit.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of an integrated RF switch with gate voltage rebalancing;
FIG. 2 is a schematic diagram of another integrated RF switch with gate voltage rebalancing;
FIG. 3 is an equivalent circuit schematic diagram of an integrated RF switch with gate voltage rebalancing;
FIG. 4 is a schematic diagram of an integrated RF switch circuit with gate voltage rebalancing according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an alternative integrated RF switch circuit with gate voltage rebalancing in accordance with an embodiment of the present invention;
FIG. 6 is a schematic diagram of an integrated RF switch circuit with gate voltage rebalancing according to an embodiment of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The typical structure of the current integrated rf switch with gate voltage rebalancing generally consists of one signal input terminal and a plurality of signal output terminals, as shown in fig. 1. Each output end is composed of a series switch structure and a to-ground parallel switch structure. When a certain path is conducted, the series switch structure 1 is conducted, and the parallel switch structure 1 connected to the ground in parallel is turned off; the other non-conducting paths are on the contrary, the series switch structure 2 is turned off, and the parallel switch structure 2 connected to the ground in parallel is turned on. Therefore, the pressure bearing capacity of the whole radio frequency switch on high-power signals is mainly determined by the pressure bearing capacity of the partial series switch structure 2 and the partial parallel switch structure 1 which are in the turn-off state.
While integrated rf switches with gate voltage rebalancing typically use fets as switching devices. And further has the field effect triode principle, and the device can be in a turn-off state by applying direct current voltage bias to the grid. However, if the rf signal voltage applied to the field effect transistor is too large, the instantaneous gate-to-source or drain voltage may exceed the threshold voltage of the device itself, causing the device to temporarily turn on, which may destroy the performance of the entire switching circuit.
As shown in fig. 2, in order to increase the voltage-bearing capacity of the switching circuit, it is generally designed to use: a high impedance device (typically a resistor with a value on the order of 10k ohms to 100k ohms) is connected in series at the control terminal so that the gate is approximately open and the rf voltage is at the very middle of the drain and the source to maximize the voltage-carrying capacity of the single-stage switching device. Meanwhile, the multistage single-stage switching devices are stacked, and therefore the pressure bearing capacity is increased.
Through the research of the inventor, in practical application, because the series resistor (the gate resistor for isolating the radio frequency signal) has a parasitic capacitance to the ground, the actual impedance of the gate at high frequency is lower than that of the design, so that the radio frequency voltage of the gate cannot be positioned between the drain and the source, but deviates to one side, and the single-stage pressure bearing is reduced, as shown in fig. 3. The negative effect becomes obvious along with the improvement of the pressure-bearing requirement of the switch and the continuous increase of the stacking series, thereby reducing the pressure-bearing capacity of the whole switch circuit and also leading the mode of increasing the whole pressure-bearing capacity by increasing the stacking series to meet the bottleneck.
Based on this, the integrated radio frequency switch with the rebalanced gate voltages provided by the embodiment of the invention improves the bearing capacity of the switch circuit by adding the equivalent capacitor structure, and ensures the application reliability.
The following is a detailed description by way of example.
The embodiment of the invention provides an integrated radio frequency switch with rebalanced grid voltage, which comprises a plurality of single-stage switch devices connected in series, wherein each single-stage switch device comprises a field effect transistor, a grid resistor and a first equivalent capacitor structure;
the drain electrode of the field effect tube is the high impedance end of the single-stage switch device, the source electrode of the field effect tube is the low impedance end of the single-stage switch device, the high impedance ends and the low impedance ends of two adjacent single-stage switch devices are connected, the high impedance end of the single-stage switch device at the foremost end is the signal input end of the integrated radio frequency switch, and the low impedance end of the single-stage switch device at the rearmost end is grounded;
the first equivalent capacitor structure is used for balancing the grid voltage of the single-stage switch device, and the installation positions of the first equivalent capacitor structures are consistent in all the single-stage switch devices.
In a practical preferred embodiment, the effect of parasitic capacitance brought by the grid resistance to the ground is counteracted by adding an equivalent capacitance structure for balancing the grid voltage, and the radio-frequency voltage of the grid is maintained at the middle between the drain and the source, so that the whole pressure-bearing capacity of the switch circuit is improved.
In some embodiments, the first equivalent capacitor structure includes a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
As an alternative embodiment, the voltage division of the gate can be adjusted by adding an extra capacitor to the source or drain at the gate.
Here, the capacitance value added for each stage is different according to the position of the stage in the stack, so as to achieve the optimal effect. In the same stack (in the same single-stage switching device), the capacitances to be added at different stages (gate to source or gate to drain) are different from each other to achieve the optimal effect.
Wherein the added capacitance may be present only on a single side, as shown in fig. 4.
In some embodiments, one end of the first equivalent capacitor structure is connected to the gate of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor structure is connected to the drain of the single-stage switching device field effect transistor.
In some embodiments, one end of the first equivalent capacitor structure is connected to the gate of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor structure is connected to the source of the single-stage switching device field effect transistor.
There may also be source and drain double edges, as shown in fig. 5, and in some embodiments, the first equivalent capacitance structure comprises a first equivalent capacitance and a second equivalent capacitance:
one end of the first equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the second equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor. .
In some embodiments, the integrated radio frequency switch comprises a first switching device, a second switching device, and a third switching device;
the high impedance end of the first switch device is a signal input end, the low impedance end of the first switch device is connected with the high impedance end of the second switch device, the low impedance end of the second switch device is connected with the high impedance end of the third switch device, and the low impedance end of the third switch device is grounded.
Here, the number of the multi-stage switching devices is not limited thereto, and is exemplified by only the first switching device, the second switching device, and the third switching device.
For a field effect transistor device with a body electrode, a capacitor may also be added to the body electrode for rebalancing the voltage of the body electrode, as shown in fig. 6, in some embodiments, the field effect transistor further includes a body electrode, the single-stage switching device where the field effect transistor is located further includes a second equivalent capacitor structure, and the second equivalent capacitor structure is used for balancing the voltage of the body electrode. Specifically, with reference to the above-described embodiment, the setting positions of the equivalent capacitance for the equilibrium body voltage may include the following:
in some embodiments, one end of the second equivalent capacitor structure is connected with the body of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor structure is connected with the drain of the single-stage switching device field effect transistor.
In some embodiments, one end of the second equivalent capacitor structure is connected to the body of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor structure is connected to the source of the single-stage switching device field effect transistor.
In some embodiments, the second equivalent capacitive structure comprises a third equivalent capacitance and a fourth equivalent capacitance:
one end of the third equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the third equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the fourth equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the fourth equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor.
According to the embodiment of the invention, a capacitor or a structure equivalent to the capacitor is added between the grid (or the body) and the source (or the drain) to balance the radio-frequency voltage of the grid and offset the negative influence caused by the parasitic capacitor of the external series resistor of the grid. Specifically, the voltage of the grid electrode (or the body electrode) is rebalanced by adding the capacitor, so that the switch in the off state is not opened early, and the maximum voltage which can be borne by the switch circuit is improved.
In the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: those skilled in the art can still make modifications or changes to the embodiments described in the foregoing embodiments, or make equivalent substitutions for some features, within the scope of the disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (8)
1. An integrated radio frequency switch with grid voltage rebalancing is characterized by comprising a plurality of single-stage switch devices which are connected in series, wherein each single-stage switch device comprises a field effect transistor, a grid resistor and a first equivalent capacitor structure;
the drain electrode of the field effect tube is the high impedance end of the single-stage switch device, the source electrode of the field effect tube is the low impedance end of the single-stage switch device, the high impedance ends and the low impedance ends of two adjacent single-stage switch devices are connected, the high impedance end of the single-stage switch device at the foremost end is the signal input end of the integrated radio frequency switch, and the low impedance end of the single-stage switch device at the rearmost end is grounded;
the grid-connected type radio frequency isolation circuit comprises a grid resistor, a first equivalent capacitor structure, a field effect tube, a second equivalent capacitor structure and a control end, wherein the grid resistor is used for isolating radio frequency signals, one end of the grid resistor is used as the control end, the other end of the grid resistor is connected with a grid electrode of a field effect tube of a single-stage switch device, the first equivalent capacitor structure is used for balancing grid voltage of the single-stage switch device, the radio frequency voltage of the grid electrode is maintained between drain voltage and source voltage, and in all the single-stage switch devices, the installation positions of the first equivalent capacitor structure are consistent and are located between the grid electrode and the source electrode of the field effect tube in the single-stage switch device or/and between the grid electrode and the drain electrode of the field effect tube in the single-stage switch device.
2. The gate voltage rebalancing integrated radio frequency switch of claim 1, wherein the first equivalent capacitor structure comprises a capacitor element, and a capacitance value of the capacitor element is adjusted according to different setting positions.
3. The integrated gate voltage rebalancing radio frequency switch of claim 1, wherein the first equivalent capacitance structure comprises a first equivalent capacitance and a second equivalent capacitance:
one end of the first equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the first equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the second equivalent capacitor is connected with the grid electrode of the single-stage switching device field effect transistor, and the other end of the second equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor.
4. The gate voltage rebalancing integrated radio frequency switch of claim 1 or 3, wherein the integrated radio frequency switch comprises a first switching device, a second switching device, and a third switching device;
the high impedance end of the first switch device is a signal input end, the low impedance end of the first switch device is connected with the high impedance end of the second switch device, the low impedance end of the second switch device is connected with the high impedance end of the third switch device, and the low impedance end of the third switch device is grounded.
5. The integrated gate voltage rebalancing radio frequency switch of claim 1, wherein the fet further comprises a body, and the single stage switching device in which the fet is located further comprises a second equivalent capacitor structure for balancing the body voltage.
6. The gate voltage rebalancing integrated radio frequency switch of claim 5, wherein one end of said second equivalent capacitor structure is connected to the body of said single stage switching device fet and the other end of said second equivalent capacitor structure is connected to the drain of said single stage switching device fet.
7. The gate voltage rebalancing integrated radio frequency switch of claim 5, wherein one end of said second equivalent capacitor structure is connected to the body of said single stage switching device fet and the other end of said second equivalent capacitor structure is connected to the source of said single stage switching device fet.
8. The gate voltage rebalancing integrated radio frequency switch of claim 5, wherein the second equivalent capacitance structure comprises a third equivalent capacitance and a fourth equivalent capacitance:
one end of the third equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the third equivalent capacitor is connected with the drain electrode of the single-stage switching device field effect transistor;
one end of the fourth equivalent capacitor is connected with the body electrode of the single-stage switching device field effect transistor, and the other end of the fourth equivalent capacitor is connected with the source electrode of the single-stage switching device field effect transistor.
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| CN202011421819.7A CN112260671B (en) | 2020-12-08 | 2020-12-08 | Integrated radio frequency switch with gate voltage rebalancing |
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| CN202011421819.7A CN112260671B (en) | 2020-12-08 | 2020-12-08 | Integrated radio frequency switch with gate voltage rebalancing |
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| CN112260671B true CN112260671B (en) | 2022-05-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040196089A1 (en) * | 2003-04-02 | 2004-10-07 | O'donnell John J. | Switching device |
| CN104242881A (en) * | 2013-06-24 | 2014-12-24 | 瑞昱半导体股份有限公司 | Semiconductor switch |
| US20150171860A1 (en) * | 2013-11-13 | 2015-06-18 | Skyworks Solutions, Inc. | Circuits and methods for improved quality factor in a stack of transistors |
| CN105811947B (en) * | 2014-12-31 | 2019-07-02 | 展讯通信（上海）有限公司 | RF switch and demultiplexer |
| CN108736866B (en) * | 2017-04-24 | 2021-12-28 | 深圳市中兴微电子技术有限公司 | CMOS SOI radio frequency switch circuit |
| KR101912289B1 (en) * | 2017-06-28 | 2018-10-29 | 삼성전기 주식회사 | Radio frequency switch apparatus with improved harmonic attenuation characteristics |
| CN107395174A (en) * | 2017-08-31 | 2017-11-24 | 广东工业大学 | The stacked circuit and RF switch of a kind of RF switch |
| CN110113036A (en) * | 2019-05-09 | 2019-08-09 | 河源广工大协同创新研究院 | A kind of radio-frequency switch circuit structure of High Linear low harmony wave |
| CN111431518A (en) * | 2020-04-21 | 2020-07-17 | 珠海复旦创新研究院 | Novel numerical control double-frequency radio frequency switch |
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