CN112259666A - Infrared LED light source based on blue light excites remote fluorescent powder - Google Patents
Infrared LED light source based on blue light excites remote fluorescent powder Download PDFInfo
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- CN112259666A CN112259666A CN202011273906.2A CN202011273906A CN112259666A CN 112259666 A CN112259666 A CN 112259666A CN 202011273906 A CN202011273906 A CN 202011273906A CN 112259666 A CN112259666 A CN 112259666A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention discloses an infrared LED light source based on blue light excitation remote fluorescent powder, which is characterized by comprising a substrate, wherein the substrate is of a planar structure, a metallized circuit layer is arranged on the periphery of the substrate, an optical window cover plate is arranged on the metallized circuit layer and is of a cavity structure, the optical window cover plate is arranged above the substrate, so that a cavity is formed between the optical window cover plate and the substrate, a blue light chip is arranged in the cavity, the optical window cover plate comprises a metal piece, a light through hole and an optical window lens covering the light through hole are respectively arranged on the metal piece, and a remote fluorescent powder layer is coated on the bottom surface of the optical window lens. Compared with the traditional scheme of adopting an infrared chip, the invention has the advantages of strong spectrum continuity, high photoelectric conversion efficiency, good air tightness, flexible application, high cost performance and the like, and compared with the scheme of adopting the blue light excitation fluorescent powder of the same type, the invention has the advantages of good consistency of emission spectrum, high air tightness, high reliability and the like.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to an infrared LED light source based on blue light excited fluorescent powder and a preparation method thereof.
[ background of the invention ]
With the gradual maturity of LED technology, LEDs are widely applied in various industries. In recent years, development of 5G technology drives interconnection of everything and smart home, different meanings of light are given, and the infrared LED plays an important role in security, face recognition, machine vision, intelligent control, food detection and medical treatment. Most of traditional infrared LEDs are plug-in type epoxy resin or silica gel packaging structures, and mainly adopt an infrared chip scheme. The application of the 660nm-1100nm near infrared is common, but at present, light in the wave band range cannot be completely made through the chip, the discontinuous part of the light of the infrared chip is more, the price change of the infrared chip close to a high wave band is also larger, the photoelectric conversion efficiency is generally lower than that of a traditional blue light chip, and therefore the continuity, the photoelectric conversion efficiency and the cost performance of the spectrum emitted by the infrared LED need to be further improved and technically innovated.
In recent years, the development of fluorescent powder technology makes the spectral components of LED light sources richer and more diverse, and more closely approaches and restores natural light, wherein the light quality and color rendering of the light sources are optimized by the full spectrum, sunlight and other schemes, and the application of the LED light sources in health illumination is more and more extensive. The existing common light is mostly directly made by core light with corresponding wave bands, the scheme has better cost performance in the traditional RGB monochromatic light, but in an infrared light LED, because an infrared chip has higher price in a high wave band or does not have a chip with a corresponding wave band and the photoelectric conversion efficiency is low, the same industry continuously tries new technical schemes and realizability.
The prior publications adopt the technical scheme of converting fluorescent powder into infrared light. Chinese patent CN107180905 discloses an infrared LED lamp with blue light chip excited fluorescent powder and a preparation method thereof, wherein rare earth elements in the adopted fluorescent powder mainly comprise several components of europium, yttrium, cerium, gallium, lutetium, scandium and yttrium, and fluorescent powder or fluorescent glue in corresponding proportion is directly coated on the blue light chip to excite the corresponding fluorescent powder to generate light with emission spectrum at specific infrared band of 850-1400nm through blue light in corresponding band. In addition, chinese patent CN108231979 discloses an infrared LED light source, which uses a direct coating of phosphor on the surface of a blue light chip or a distance above the blue light chip to excite the phosphor to generate infrared or near-infrared light with an emission spectrum of 760nm to 1500 nm.
The scheme verifies the feasibility of converting the blue light excited fluorescent powder into infrared light or near-infrared light. However, the above solutions all have the problem that when light of a specific infrared band (for example, 730nm, 850nm or 940nm) is generated, stray light of similar bands is contained therein, and the spectral purity of the light generated by the infrared chip is lower than that of the light generated by the infrared chip. And thus, are subject to further improvement and optimization.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provides an infrared LED light source based on blue light excitation remote fluorescent powder and a preparation method thereof.
The invention is realized by the following technical scheme:
an infrared LED light source based on blue light arouses phosphor powder which characterized in that: including base plate 2, base plate 2 is planar structure base plate 2's periphery is equipped with metallization circuit layer 4 be equipped with light window apron 1 on the metallization circuit layer 4, and light window apron 1 is cavity structures, light window apron 1 is located base plate 2's top makes light window apron 1 with form cavity 6 between the base plate 2 be equipped with blue light chip 3 in the cavity 6, light window apron 1 is equipped with respectively including metalwork 101 and leads to the unthreaded hole, covers on metalwork 101 the light window lens 102 that leads to the unthreaded hole the bottom surface coating of light window lens 102 has long-range phosphor layer 7.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the thickness of the coated remote phosphor layer 7 is 0.05MM-0.2MM, and the phosphor of the remote phosphor layer 7 contains an inorganic compound having a chemical formula of AxRpOr: Dy.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the blue light chip 3 is a conventional chip or a flip chip, and the wave band range of the blue light chip is 400 nanometers to 470 nanometers.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: and a solder 5 for welding and connecting the optical window lens 102 and the metal piece 101 is arranged between the optical window lens 102 and the metal piece 101, the solder 5 is annular, and the solder 5 is made of an inorganic material.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the substrate 2 is made of one of ceramic, aluminum material, copper material and aluminum silicon carbide substrate.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the optical window lens 102 is made of quartz glass, and the shape of the optical window lens 102 is one of square, circular, ellipsoid and hemisphere.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the material of metalwork 101 is kovar or copper or aluminium, metalwork 101 bottom border portion is equipped with the metal welding limit that extends, the metal welding limit with metallization circuit layer 4 welded connection, the width H1 of metal welding limit is ≧ 0.3 millimeter, the thickness H2 of metallization circuit layer 4 is ≧ 60 microns, metallization circuit layer 4 surface is equipped with the cladding material, the material of cladding material is gold or nickel gold.
As mentioned above infrared LED light source based on blue light arouses phosphor powder, its characterized in that: the surface of the metal piece 101 is provided with a nickel plating layer, and the depth H3 of the cavity 6 is not less than 0.5 mm.
The preparation method of the infrared LED light source based on the blue light excited fluorescent powder is characterized by comprising the following steps of:
an annular metallized circuit layer 4 is arranged at the edge of the substrate 2, the thickness of the circuit layer of the metallized circuit layer 4 is not less than 60um, and the surface of the metallized circuit layer 4 is subjected to gold plating or nickel gold processing;
the blue light chip 3 is bound on the substrate 2 through a solder paste die bonding or eutectic process;
the metal piece 101 is manufactured through die stamping, and nickel plating is carried out on the surface of the metal piece 101;
selecting a quartz glass sheet, and performing plating treatment on the surface of the quartz glass sheet;
uniformly pressing the prepared fluorescent glue on the surface of quartz glass by a mould pressing process, controlling the thickness and the flatness, and baking and curing;
cutting a quartz glass sheet matched with the size of the light through hole to prepare an optical window lens 102, and performing plating treatment on an annular area with the edge of the optical window lens 102 being less than or equal to 0.5 mm, wherein the plating thickness is greater than or equal to 10 micrometers;
manufacturing a solder 5 with a matched size;
the optical window lens 102 is arranged in the metal piece 101 through a tool fixture, the optical window lens 102 and the metal piece 101 are sealed into the optical window cover plate 1 through a sintering process, or the optical window lens 102 and the metal piece 101 are welded into the optical window cover plate 1 through adding a welding material 5;
the optical window cover plate 1 is assembled on the metallized circuit layer 4 of the substrate 2 through a jig, and the optical window cover plate 1 and the substrate 2 are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the infrared LED light source.
The preparation method of the infrared LED light source based on the blue light excited fluorescent powder is characterized by comprising the following steps: the solder 5 comprises the components of TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%; the plating composition at the edge of the optical window lens 102 is nickel gold or copper.
Compared with the prior art, the invention has the following advantages:
1. compared with the traditional scheme of adopting an infrared chip, the invention has the advantages of strong spectrum continuity, high photoelectric conversion efficiency, good air tightness, flexible application, high cost performance and the like, and compared with the scheme of adopting the blue light excitation fluorescent powder of the same type, the invention has the advantages of good consistency of emission spectrum, high air tightness, high reliability and the like.
2. The substrate, the metal piece and the optical window lens are all made of inorganic materials, the solder, the metallized circuit layer and all the coatings are also made of inorganic materials, the optical window lens and the metal piece are sealed into a whole by adopting a sintering process or a fusion welding process to manufacture the optical window cover plate, and the optical window cover plate and the substrate are combined into a whole by adopting a resistance welding process or a fusion welding process, so that high-airtightness and inorganic packaging are realized.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a substrate for an infrared LED light source according to the present invention;
FIG. 2 is a schematic cross-sectional view of an infrared LED light source according to a first embodiment of the present invention, in which an optical window lens is connected to a metal member by sintering, a cover plate of the optical window has a cavity structure, a substrate has a planar structure, and the optical window lens has a square or circular shape;
FIG. 3 is a schematic sectional view of a second infrared LED light source according to the present invention, in which an optical window lens is connected to a metal member by sintering, a cover plate of the optical window has a cavity structure, a substrate has a planar structure, and the optical window lens has a hemispherical or ellipsoidal shape;
fig. 4 is a schematic sectional view of a third infrared LED light source according to the present invention, in which an optical window lens is connected to a metal member by fusion welding, an optical window cover plate has a planar structure, a substrate has a cavity structure, and the optical window lens has a square or circular shape.
In the figure: 1 is a light window cover plate; 101 is a metal piece; 102 is a light window lens; 2 is a substrate; 3 is a blue light chip; 4 is a metallized circuit layer; 5 is solder; 6 is a cavity; and 7, a remote phosphor layer.
[ detailed description ] embodiments
The technical features of the present invention will be described in further detail with reference to the accompanying drawings so that those skilled in the art can understand the technical features.
The utility model provides an infrared LED light source based on phosphor powder is aroused to blue light, including base plate 2 the periphery of base plate 2 is equipped with metallization circuit layer 4 be equipped with optical window apron 1 on metallization circuit layer 4, optical window apron 1 is cavity structures, optical window apron 1 locates the top of base plate 2 makes optical window apron 1 with form cavity 6 between the base plate 2, the degree of depth H3 of cavity 6 ≧ 0.5 millimeter be equipped with blue light chip 3 in the cavity 6, optical window apron 1 is including metalwork 101, is equipped with the light passing hole respectively on metalwork 101, covers the optical window lens 102 of light passing hole the bottom surface coating of optical window lens 102 has long-range phosphor powder layer 7.
The optical window cover plate 1 is sealed with the base plate 2 into a whole through resistance welding or fusion welding technology. Compared with the traditional infrared chip scheme, the method has the characteristics of strong spectrum continuity, high photoelectric conversion efficiency, good air tightness, flexible application, high cost performance and the like. Compared with the scheme of exciting the fluorescent powder by the blue light of the same type, the scheme has the characteristics of good consistency of emission spectrum, high air tightness, high reliability and the like.
In the infrared LED light source based on blue light excited phosphor, the thickness of the remote phosphor layer 7 is 0.05MM-0.2MM, and the phosphor of the remote phosphor layer 7 contains inorganic compound with chemical formula AxRpOr: Dy, and refer to patent publication No. CN110857389A specifically. The remote fluorescent powder layer can generate near infrared light with the emission spectrum range of 700nm-1400nm after being excited by a specific blue light wave band.
In the infrared LED light source based on blue light excited phosphor, the blue light chip 3 is a conventional chip or a flip chip, the wavelength range of the blue light chip is 400nm to 470 nm, the blue light chip is bonded on the substrate 2 by a solder paste, a die attach adhesive or an eutectic process, and the metalized circuit layer 4 is disposed on the edge of the substrate 2.
Further, the blue light chip 3 may be a single large-sized blue light chip or a plurality of small-sized blue light chips bound together, and any combination is realized by the above technical means.
The shape of the light window cover plate 1 is not limited to a square, a circle, etc. The depth H3 of the cavity 6 formed between the optical window cover plate 1 and the substrate 2 is ≧ 0.5 mm, the substrate 2 may be a planar structure or a cavity structure with steps, and when the substrate 2 is a planar structure, the corresponding optical window cover plate 1 is a cavity structure; when the substrate 2 is a cavity structure with steps, the corresponding optical window cover plate 1 is a planar structure, and the height H4 of the steps is not less than 0.35 mm, so that gold wires are not damaged when the substrates are assembled and sealed conveniently.
Be equipped with the circuit pattern on base plate 2, base plate 2's material can be ceramic substrate, also can be metal substrate such as aluminum product, copper product etc. also can adopt other composite material that have high heat conduction and reflection of light characteristic, such as aluminium carborundum base plate, scribble the metal substrate of graphite alkene etc..
Further, the surface of the ceramic substrate is plated with aluminum or a high-reflection coating material such as PTFE is adopted, so that the overall light extraction performance of the device in the invisible light band, particularly the UVC band, is further improved.
When the optical window lens 102 is connected with the metal piece 101 in a sintering mode, the solder 5 for connecting the optical window lens 102 and the metal piece 101 in a welding mode is arranged between the optical window lens 102 and the metal piece 101, the solder 5 is annular, and the solder 5 is made of inorganic materials. The solder 5 comprises TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%.
The optical window lens 102 and the metal member 101 may be joined by welding, and the solder 5 is not required.
As mentioned above, in the infrared LED light source based on blue light excited phosphor, the material of the optical window lens 102 is quartz glass, and the shape of the optical window lens 102 is one of a square shape, a circular shape, an ellipsoid shape, and a hemisphere shape. When the shape of the optical window lens 102 is different, the shape of the metal member 101 is also changed adaptively for the convenience of welding.
As above infrared LED light source based on blue light excitation phosphor, the material of metalwork 101 is kovar, copper or aluminum, metalwork 101 surface is equipped with nickel coating, metalwork 101 bottom border portion is equipped with the metal welding limit that extends, the metal welding limit with metallization circuit layer 4 welded connection, the width H1 ≧ 0.3 millimeter of metal welding limit.
The patent also claims a preparation method of the infrared LED light source based on blue light excited fluorescent powder, which comprises the following steps:
an annular metallized circuit layer 4 is arranged at the edge of the substrate 2, the thickness of the circuit layer of the metallized circuit layer 4 is not less than 60um, and the surface of the metallized circuit layer 4 is subjected to gold plating or nickel gold processing;
the blue light chip 3 is bound on the substrate 2 through a solder paste die bonding or eutectic process;
the metal piece 101 is manufactured through die stamping, and nickel plating is carried out on the surface of the metal piece 101;
selecting a quartz glass sheet, and performing plating treatment on the surface of the quartz glass sheet;
uniformly pressing the prepared fluorescent glue on the surface of quartz glass by a mould pressing process, controlling the thickness and the flatness, and baking and curing;
cutting a quartz glass sheet matched with the size of the light through hole to manufacture the optical window lens 102, and performing plating treatment on an annular area with the edge of the optical window lens 102 being less than or equal to 0.5 mm, wherein the plating thickness is greater than or equal to 10 micrometers, and the plating component on the edge of the optical window lens 102 is nickel or copper.
Manufacturing a solder 5 with a matched size;
the optical window lens 102 is arranged in the metal piece 101 through a tool fixture, the quartz glass edge coating area and the matching contact part of the metal piece are welded by adopting a welding process to manufacture the optical window cover plate 1, and the welding process needs to be carried out in high-purity nitrogen or mixed atmosphere of nitrogen and helium so as to achieve better air tightness effect. Or adding the solder 5 and sealing the optical window lens 102 and the metal piece 101 into the optical window cover plate 1 by adopting a sintering process.
The optical window cover plate 1 is assembled on the metallized circuit layer 4 of the substrate 2 through a jig, and the optical window cover plate 1 and the substrate 2 are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the LED device.
The optical window cover plate 1 is assembled on the metallized circuit layer 4 of the substrate 2 through a jig, and the optical window cover plate 1 and the substrate 2 are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the infrared LED light source.
In addition, the light window cover plate coated with the remote fluorescent powder layer can be manufactured according to the following steps:
1. a corresponding metal piece 101 is manufactured by adopting a precise die in a stamping mode, the material of the metal piece is kovar, and nickel plating is needed to be carried out on the surface of the metal piece 101;
2. cutting a quartz glass sheet with a corresponding size to manufacture the optical window lens 102;
3. manufacturing a solder 5 with a matched size;
4. sequentially installing the solder 5 and the optical window lens 102 into the metal piece 101 through a tooling fixture;
5. the optical window lens 102 and the metal piece 101 are sealed into a whole by adopting a corresponding sintering process or a welding process to achieve the effect of an airtight optical window;
6. and (3) putting the optical window cover plate 1 sealed into a whole into a corresponding dispensing mould, simultaneously uniformly injecting the prepared fluorescent glue into the glass in the cavity structural member of the optical window cover plate 1 according to a certain amount, placing the glass into an oven after leveling, and baking for operation according to the corresponding temperature section according to the characteristics of the fluorescent glue, wherein the glass is baked at 100 ℃ for half an hour and then is rotated to 150 ℃ for two hours.
7. And taking out the baked optical window cover plate 1, detecting the consistency of the fluorescent powder layer 7 and the joint force of the fluorescent powder layer and the optical window lens 102, and further testing the infrared spectrum excited in a specific blue light waveband.
The embodiment of the present invention is described only for the preferred embodiment of the present invention, and not for the purpose of limiting the spirit and scope of the invention, and various modifications and improvements made to the technical solution of the present invention by those skilled in the art without departing from the design concept of the present invention shall fall within the protection scope of the present invention.
Claims (10)
1. An infrared LED light source based on blue light arouses phosphor powder which characterized in that: including base plate (2), base plate (2) are planar structure the periphery of base plate (2) is equipped with metallization circuit layer (4) be equipped with light window apron (1) on metallization circuit layer (4), light window apron (1) is cavity structures, light window apron (1) is located the top of base plate (2) makes light window apron (1) with form cavity (6) between base plate (2) be equipped with blue light chip (3) in cavity (6), light window apron (1) is equipped with logical unthreaded hole, covers respectively on metalwork (101) the light window lens (102) of logical unthreaded hole the bottom surface coating of light window lens (102) has remote phosphor layer (7).
2. The infrared LED light source based on blue light excited phosphor of claim 1, wherein: the thickness of the coated remote phosphor layer (7) is 0.05MM-0.2MM, and the phosphor of the remote phosphor layer (7) comprises an inorganic compound with a chemical formula of AxRPror: Dy.
3. The infrared LED light source based on blue light excited phosphor of claim 1, wherein: the blue light chip (3) is a conventional chip or a flip chip, and the wave band range of the blue light chip is 400-470 nanometers.
4. An infrared LED light source based on blue light excited fluorescent powder as claimed in claim 2 or 3, wherein: and a solder (5) for connecting the optical window lens (102) and the metal piece (101) in a welding manner is arranged between the optical window lens (102) and the metal piece (101), the solder (5) is annular, and the solder (5) is made of an inorganic material.
5. An infrared LED light source based on blue light excited fluorescent powder as claimed in claim 2 or 3, wherein: the substrate (2) is made of one of ceramic, aluminum material, copper material and aluminum silicon carbide substrate.
6. An infrared LED light source based on blue light excited fluorescent powder as claimed in claim 2 or 3, wherein: the optical window lens (102) is made of quartz glass, and the shape of the optical window lens (102) is one of square, round, ellipsoid and hemisphere.
7. An infrared LED light source based on blue light excited fluorescent powder as claimed in claim 2 or 3, wherein: the material of metalwork (101) is kovar or copper or aluminium, metalwork (101) bottom border portion is equipped with the metal welding limit that extends, the metal welding limit with metallization circuit layer (4) welded connection, the width H1 ≧ 0.3 millimeter of metal welding limit, the thickness H2 of metallization circuit layer (4) is ≧ 60 microns, metallization circuit layer (4) surface is equipped with the cladding material, the material of cladding material is gold or nickel gold.
8. An infrared LED light source based on blue light excited fluorescent powder as claimed in claim 2 or 3, wherein: the surface of the metal piece (101) is provided with a nickel plating layer, and the depth H3 of the cavity (6) is not less than 0.5 mm.
9. A method for preparing an infrared LED light source based on blue light excited fluorescent powder according to any one of claims 1 to 8, comprising:
an annular metallized circuit layer (4) is arranged on the edge of the substrate (2), the thickness of the circuit layer of the metallized circuit layer (4) is not less than 60um, and the surface of the metallized circuit layer (4) is subjected to gold plating or nickel gold processing;
the blue light chip (3) is bound on the substrate (2) through a solder paste die bonding or eutectic process;
manufacturing the metal piece (101) by stamping through a die, and carrying out nickel plating treatment on the surface of the metal piece (101);
selecting a quartz glass sheet, and performing plating treatment on the surface of the quartz glass sheet;
uniformly pressing the prepared fluorescent glue on the surface of quartz glass by a mould pressing process, controlling the thickness and the flatness, and baking and curing;
cutting a quartz glass sheet matched with the size of the light through hole to manufacture a light window lens (102), and performing plating treatment on an annular area with the edge of less than or equal to 0.5 mm of the light window lens (102), wherein the plating thickness is greater than or equal to 10 micrometers;
manufacturing a solder (5) with a matched size;
the optical window lens (102) is arranged in the metal piece (101) through a tool fixture, the optical window lens (102) and the metal piece (101) are sealed into the optical window cover plate (1) through a sintering process, or the optical window lens (102) and the metal piece (101) are welded into the optical window cover plate (1) through adding a welding material (5);
the optical window cover plate (1) is assembled on the metallized circuit layer (4) of the substrate (2) through a jig, and the optical window cover plate (1) and the substrate (2) are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the infrared LED light source.
10. The method for preparing an infrared LED light source based on blue light excitation fluorescent powder according to claim 9, characterized in that: the solder (5) comprises TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%; the plating composition of the edge of the optical window lens (102) is nickel gold or copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011273906.2A CN112259666A (en) | 2020-11-14 | 2020-11-14 | Infrared LED light source based on blue light excites remote fluorescent powder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011273906.2A CN112259666A (en) | 2020-11-14 | 2020-11-14 | Infrared LED light source based on blue light excites remote fluorescent powder |
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| CN112259666A true CN112259666A (en) | 2021-01-22 |
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| CN202011273906.2A Pending CN112259666A (en) | 2020-11-14 | 2020-11-14 | Infrared LED light source based on blue light excites remote fluorescent powder |
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| Country | Link |
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