CN112259492B - Electrostatic bonding method and electrostatic bonding apparatus - Google Patents
Electrostatic bonding method and electrostatic bonding apparatus Download PDFInfo
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- CN112259492B CN112259492B CN202011096820.7A CN202011096820A CN112259492B CN 112259492 B CN112259492 B CN 112259492B CN 202011096820 A CN202011096820 A CN 202011096820A CN 112259492 B CN112259492 B CN 112259492B
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- electrostatic chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The present disclosure relates to the field of semiconductor integrated circuit manufacturing technologies, and in particular, to an electrostatic bonding method and an electrostatic bonding apparatus. The method comprises the following steps: the electrostatic chuck is moved from a transmission cavity with the environment at a first vacuum pressure to a working cavity with the environment at a second vacuum pressure; providing a DC voltage to the electrostatic chuck; loading a wafer with an active device formed on the front surface on the electrostatic chuck in the working chamber, so that the front surface of the wafer is in contact with the electrostatic chuck; and in the working chamber with a second vacuum pressure environment, the front surface of the wafer is electrostatically attracted with the electrostatic chuck. The electrostatic bonding method and the electrostatic bonding device can solve the problem that relative sliding can be generated between the front surface of the wafer and the wafer sucker due to internal and external pressure difference in the related technology.
Description
Technical Field
The present disclosure relates to the field of semiconductor integrated circuit manufacturing technologies, and in particular, to an electrostatic bonding method and an electrostatic bonding apparatus.
Background
The wafer back processing technology is widely applied to the technical field of semiconductor integrated circuits, and mainstream processes required for manufacturing the device comprise a wafer back thinning process, an ion implantation process, a thermal annealing process and the like. The process of ion implantation on the back of the wafer is particularly critical.
Before ion implantation is carried out on the back of a wafer, the front of the wafer needs to be electrostatically attached to an electrostatic absorption supporting plane, and because certain active devices are formed on the front of the wafer in advance, a closed space is formed between a recess positioned between adjacent active devices and the supporting plane, and normal-pressure gas is sealed in the closed space. Generally, the ion implantation process needs to be performed in a vacuum environment, so that the surrounding environment needs to be changed into a vacuum state after the front surface of the wafer is electrostatically attracted to the support plane.
However, the air pressure of the vacuum environment in which the wafer and the supporting plane are located and the air pressure of the enclosed space between adjacent active devices form an internal-external pressure difference, and under the influence of the internal-external pressure difference, the normal pressure gas in the enclosed space surges outwards, so that the electrostatic bonding between the wafer and the supporting plane is damaged, the front surface of the wafer and the supporting plane can slide relatively, and the subsequent back surface ion implantation process is not facilitated.
Disclosure of Invention
The application provides an electrostatic laminating method and an electrostatic laminating device, which can solve the problem that relative sliding is generated between the front surface of a wafer and a chip sucker due to internal and external pressure difference in the related technology.
As a first aspect of the present application, there is provided an electrostatic bonding method including:
the electrostatic chuck is moved from a transmission cavity with the environment at a first vacuum pressure to a working cavity with the environment at a second vacuum pressure;
providing a DC voltage to the electrostatic chuck;
loading a wafer with an active device formed on the front surface on the electrostatic chuck in the working chamber, so that the front surface of the wafer is in contact with the electrostatic chuck;
and in the working chamber with a second vacuum pressure environment, the front surface of the wafer is electrostatically attracted with the electrostatic chuck.
Optionally, a pressure value of the second vacuum pressure is consistent with an ambient pressure requirement when ion implantation is performed on the back surface of the wafer.
Optionally, the step of providing the dc voltage to the electrostatic chuck includes:
the time for supplying the DC voltage with the voltage value of 0.8-1.2 kv to the electrostatic chuck is 20-40 s
Optionally, the pressure value of the second vacuum pressure is 4E-6 Torr.
As a second aspect of the present application, there is provided an electrostatic laminating apparatus comprising:
a transfer chamber having an environment at a first vacuum pressure;
a working chamber capable of communicating with the transfer chamber, the environment of the working chamber being a second vacuum pressure;
the electrostatic chuck can move from the conveying cavity to the working cavity, and comprises a base body, wherein a conductive film for adsorbing a wafer is arranged on the upper surface of the base body;
and the direct current power supply is connected with the conductive film in the electrostatic chuck and is used for providing direct current voltage for the conductive film.
And the control device is connected with the gas regulating system, the direct current power supply and the wafer detection device and is used for controlling the direct current power supply and the gas regulating system to work.
Optionally, the first vacuum pressure is in a range of 1E-6 Torr.
Optionally, a pressure value of the second vacuum pressure is consistent with an ambient pressure requirement when ion implantation is performed on the back surface of the wafer.
Optionally, the voltage value of the direct current voltage is 0.8kv to 1.2 kv.
The technical scheme at least comprises the following advantages: this application is through making the electrostatic chuck by the environment for first vacuum pressure's conveying chamber, move to the environment for the working chamber of second vacuum pressure, provide again electrostatic chuck DC voltage, then in the working chamber, the wafer that will openly be formed with active device loads on the electrostatic chuck, makes the front of wafer with the electrostatic chuck contact is having second vacuum pressure environment in the working chamber, make the front of wafer with electrostatic chuck electrostatic actuation. Therefore, in the process of attracting the wafer and the electrostatic chuck, the environment of the working cavity is always kept at the second vacuum pressure, so that the pressure of the spacing groove between the adjacent active devices of the wafer can be consistent with the second vacuum pressure, and after the electrostatic chuck and the wafer are attracted, the spacing groove is sealed to form a sealed cavity, so that the pressure of the sealed cavity is consistent with the second vacuum pressure, the problem of relative sliding between the wafer and the electrostatic chuck caused by the difference of internal pressure and external pressure is avoided, and the follow-up back ion implantation process is improved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a wafer structure according to an embodiment of the present disclosure;
FIG. 2 is a cross-sectional view of an electrostatic clamp according to an embodiment of the present disclosure as the electrostatic chuck moves into a processing chamber;
FIG. 3 is a cross-sectional view of the wafer and electrostatic chuck after chucking;
fig. 4 is a flow chart of an electrostatic method according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 shows a schematic structural diagram of a wafer involved in an embodiment of the present application, and referring to fig. 1, the wafer 100 includes a front surface 101 and a back surface 102, a plurality of active devices 103 are formed on the front surface 101 of the wafer 100, and a spacing groove 104 is formed between two adjacent active devices 103.
Fig. 2 is a schematic cross-sectional view illustrating an electrostatic laminating apparatus according to an embodiment of the present application, and referring to fig. 2, the electrostatic laminating apparatus includes:
a working chamber 110, the environment of the working chamber 110 being a second vacuum pressure. The working chamber 110 is provided with an air pressure adjusting system 120 for adjusting the air pressure of the working chamber 110, and the air pressure adjusting system 120 can adjust the environment in the working chamber 110 to a second vacuum pressure. The gas adjusting system 120 is connected to the control device 160, and can adjust the gas pressure of the working chamber 110 according to the control signal of the control device 160, and the gas adjusting system 120 can also collect the gas pressure value in the working chamber 110 and transmit the collected gas pressure value of the working chamber 110 to the control device 160.
The environment of the transfer chamber 170 is a first vacuum pressure, the transfer chamber 170 is connected to the working chamber, a sealing door is disposed at a position where the transfer chamber 170 is connected to the working chamber 110, and when the sealing door is opened, the transfer chamber 170 is communicated with the working chamber.
An electrostatic chuck 130 that is movable into the working chamber from the transfer chamber 170. Referring to fig. 3, which shows a cross-sectional structure of the wafer and the electrostatic chuck after being attached, the electrostatic chuck 130 includes a substrate 131, and a conductive film 132 for attaching the wafer 100 is disposed on an upper surface of the substrate 131. In fig. 3, a dc power supply 140 is connected to the conductive film 132 through a power supply lead 133. for example, the dc power supply 140 supplies a negative dc voltage to the conductive film 132, so that the conductive film 132 is negatively charged. Under the action of the negatively charged conductive film 132, charges move in the active device 103 in contact with the conductive film 132, and the positive charges move to the surface of the active device 103, so that an attractive force is generated between the wafer 100 and the electrostatic chuck 130 at the surface for attraction.
With continued reference to fig. 2, the electrostatic bonding apparatus includes a wafer inspection apparatus 150, and the wafer inspection apparatus 150 may be disposed on the electrostatic chuck 130 for inspecting whether the wafer 100 is loaded on the electrostatic chuck 130. The wafer inspection device 150 is connected to a control device 160, and is used for inspecting whether the wafer 100 is loaded on the electrostatic chuck 130 or not, and transmitting the inspection information to the control device 160.
And the direct current power supply 140 is connected with the conductive film of the electrostatic chuck 130 through a power supply lead and is used for providing direct current voltage for the conductive film of the electrostatic chuck 130. The dc power supply 140 is connected to a control device 160, and is used for providing a dc voltage to the conductive film of the electrostatic chuck 130 according to a control signal of the control device 160.
And the control device 160 is connected with the gas conditioning system 120, the dc power supply 140 and the wafer detection device 150, and is configured to control the operation of the dc power supply 140 and the gas conditioning system 120.
With reference to fig. 2, an electrostatic lamination method provided in an embodiment of the present application is described, fig. 4 shows a flowchart of the electrostatic lamination method, and with reference to fig. 2 and fig. 4, the electrostatic lamination method includes:
step S1: the electrostatic chuck is moved from the transfer chamber with the environment at the first vacuum pressure to the working chamber with the environment at the second vacuum pressure.
Referring to fig. 2, in fig. 2, the electrostatic chuck 130 is moved from the transfer chamber 170 to the process chamber 110, the environment of the transfer chamber 170 is a first vacuum pressure, and the environment of the process chamber 110 is a second vacuum pressure. During the movement of the electrostatic chuck 130 in the transfer chamber 170, the transfer chamber 170 maintains a first vacuum pressure environment to provide a preparatory condition for the electrostatic chuck 130 to move into the processing chamber 110 to securely engage the wafer 100.
Step S2: providing a DC voltage to the electrostatic chuck.
The electrostatic chuck 130 is energized by energizing the electrostatic chuck 130 while the electrostatic chuck 130 is in the working chamber 110. In one embodiment, the conductive film 132 of the electrostatic chuck 130 is negatively charged by applying a dc voltage of 0.8kv to 1.2kv for a time period of 20s to 40s to the electrostatic chuck 130.
Step S3: and loading the wafer with the front surface formed with the active device on the electrostatic chuck in the working cavity, so that the front surface of the wafer is in contact with the electrostatic chuck.
Referring to fig. 2, in the working chamber 110, the wafer 100 is loaded on the electrostatic chuck 130, and since the surface of the electrostatic chuck 130 is to be negatively charged, charge movement occurs in the active device 103 of the wafer 100 in contact with the surface of the electrostatic chuck 130, and the positive charge moves to the surface of the active device 103, so that an attractive force is generated between the wafer 100 and the electrostatic chuck 130 at the surface to attract.
Step S4: and in the working chamber with a second vacuum pressure environment, the front surface of the wafer is electrostatically attracted with the electrostatic chuck.
In the process of attracting the wafer 100 to the electrostatic chuck 130, since the environment of the working chamber 110 is always kept at the second vacuum pressure, the pressure of the spacer 104 between the adjacent active devices 103 on the wafer 100 can be made to be consistent with the second vacuum pressure, and after the electrostatic chuck 130 and the wafer 100 are attracted, the spacer 104 is sealed to form a closed chamber, so that the pressure of the closed chamber is consistent with the second vacuum pressure, thereby avoiding the problem of relative sliding between the wafer 100 and the electrostatic chuck 130 due to the difference between the internal pressure and the external pressure.
The pressure value of the second vacuum pressure is consistent with the environmental pressure requirement value when ion implantation is carried out on the back surface of the wafer.
Wherein the pressure value of the second vacuum pressure is consistent with the environmental pressure requirement when ion implantation is carried out on the back surface of the wafer. The pressure value of the first vacuum pressure is 1E-6Torr, the pressure value of the second vacuum pressure is 4E-6Torr, and the voltage value of the direct current voltage is 0.8-1.2 kv.
The embodiment of this application, through making the electrostatic chuck by the environment for first vacuum pressure's transfer chamber, move to the environment for the working chamber of second vacuum pressure, provide again electrostatic chuck direct current voltage, then in the working chamber, with the positive wafer that is formed with active device load on the electrostatic chuck, make the front of wafer with the electrostatic chuck contact has the second vacuum pressure environment in the working chamber, make the front of wafer with electrostatic chuck electrostatic actuation. Therefore, in the process of attracting the wafer and the electrostatic chuck, the environment of the working cavity is always kept at the second vacuum pressure, so that the pressure of the spacing groove between the adjacent active devices of the wafer can be consistent with the second vacuum pressure, and after the electrostatic chuck and the wafer are attracted, the spacing groove is sealed to form a sealed cavity, so that the pressure of the sealed cavity is consistent with the second vacuum pressure, and the problem that relative sliding between the wafer and the electrostatic chuck is caused due to the difference of internal pressure and external pressure is avoided.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (8)
1. An electrostatic bonding method, comprising:
the electrostatic chuck moves from a transmission cavity with the environment of first vacuum pressure to a working cavity with the environment of second vacuum pressure;
providing a DC voltage to the electrostatic chuck;
loading a wafer with an active device formed on the front surface on the electrostatic chuck in the working chamber, so that the front surface of the wafer is in contact with the electrostatic chuck;
and in the working chamber with the second vacuum pressure environment, the front side of the wafer is electrostatically attracted with the electrostatic chuck.
2. The electrostatic bonding method of claim 1, wherein the second vacuum pressure has a pressure value that is consistent with an ambient pressure requirement for ion implantation into the backside of the wafer.
3. The method of electrostatic coating according to claim 1, wherein the step of applying a dc voltage to the electrostatic chuck comprises:
and providing the electrostatic chuck with direct current voltage with the voltage value of 0.8-1.2 kv for 20-40 s.
4. The electrostatic bonding method of claim 1, wherein the second vacuum pressure has a pressure value of 4E-6 Torr.
5. An electrostatic laminating apparatus, characterized in that the electrostatic laminating apparatus comprises:
a transfer chamber having an environment at a first vacuum pressure;
a working chamber capable of communicating with the transfer chamber, the environment of the working chamber being a second vacuum pressure;
the electrostatic chuck can move from the conveying cavity to the working cavity, and comprises a base body, wherein a conductive film for adsorbing a wafer is arranged on the upper surface of the base body;
the direct current power supply is connected with the conductive film in the electrostatic chuck and used for providing direct current voltage for the conductive film;
and the control device is connected with the gas regulating system, the direct-current power supply and the wafer detection device and is used for controlling the direct-current power supply and the gas regulating system to work.
6. The electrostatic laminating apparatus of claim 5, wherein the first vacuum pressure is in a range of 1E-6 Torr.
7. The electrostatic bonding apparatus according to claim 5, wherein the second vacuum pressure has a pressure value corresponding to an ambient pressure requirement for ion implantation into the backside of the wafer.
8. The electrostatic bonding apparatus according to claim 5, wherein the dc voltage has a voltage value of 0.8kv to 1.2 kv.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011096820.7A CN112259492B (en) | 2020-10-14 | 2020-10-14 | Electrostatic bonding method and electrostatic bonding apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011096820.7A CN112259492B (en) | 2020-10-14 | 2020-10-14 | Electrostatic bonding method and electrostatic bonding apparatus |
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| Publication Number | Publication Date |
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| CN112259492A CN112259492A (en) | 2021-01-22 |
| CN112259492B true CN112259492B (en) | 2022-08-16 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992920A (en) * | 2015-05-27 | 2015-10-21 | 上海华力微电子有限公司 | Method for controlling suction force of electrostatic chuck |
| CN108376659A (en) * | 2018-01-30 | 2018-08-07 | 上海华力微电子有限公司 | Helium pressure control system and method when a kind of electrostatic chuck destatics |
| CN111653515A (en) * | 2020-05-29 | 2020-09-11 | 华虹半导体(无锡)有限公司 | Silicon wafer back injection device and method for preventing wafer dropping |
-
2020
- 2020-10-14 CN CN202011096820.7A patent/CN112259492B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992920A (en) * | 2015-05-27 | 2015-10-21 | 上海华力微电子有限公司 | Method for controlling suction force of electrostatic chuck |
| CN108376659A (en) * | 2018-01-30 | 2018-08-07 | 上海华力微电子有限公司 | Helium pressure control system and method when a kind of electrostatic chuck destatics |
| CN111653515A (en) * | 2020-05-29 | 2020-09-11 | 华虹半导体(无锡)有限公司 | Silicon wafer back injection device and method for preventing wafer dropping |
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| CN112259492A (en) | 2021-01-22 |
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