CN112259413B - Physical latching MEMS switch based on liquid metal - Google Patents
Physical latching MEMS switch based on liquid metal Download PDFInfo
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- CN112259413B CN112259413B CN202010989266.9A CN202010989266A CN112259413B CN 112259413 B CN112259413 B CN 112259413B CN 202010989266 A CN202010989266 A CN 202010989266A CN 112259413 B CN112259413 B CN 112259413B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H37/72—Switches in which the opening movement and the closing movement of a contact are effected respectively by heating and cooling or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H37/02—Details
- H01H37/04—Bases; Housings; Mountings
Abstract
A physical latching MEMS switch based on liquid metal adopts the principle of electrothermal drive, and comprises a cover plate, a metal liquid drop and a switch driving device, wherein the cover plate takes glass as a substrate, an SU8 glue structure is manufactured on the cover plate, the metal liquid drop is packaged between a sleeve of the cover plate and a liquid storage tank of the driving device, and the cover plate and the switch driving device are bonded together by the glue; the fixed electrode of the switch is always kept in contact with the metal liquid drop, and the movable electrode can generate linear displacement under the electrothermal effect to be in contact with or separated from the metal liquid drop, so that the switch circuit is switched on or off; the driving device is provided with a physical latch structure, and the switch can be locked and unlocked through the time sequence action and the matching of the limiting rod and the wedge-shaped sliding block; the invention has the characteristics of stable conduction state, low contact resistance, low power consumption, environmental protection and the like.
Description
Technical Field
The invention belongs to the technical field of micro mechanical electronic MEMS switches, and particularly relates to a physical latching MEMS switch based on liquid metal.
Background
The switch is a key component in an automatic control circuit, and the main functions of the switch are safety protection, circuit conversion and the like. In applications such as wireless communication, aerospace, military security and the like, the switch is generally required to be capable of rapidly responding when receiving a state switching signal, and has a good contact effect when being closed, including stable contact and low contact resistance, and is also required to be small in size, light in weight, low in power consumption and the like.
Compared with the traditional electromechanical switch, the MEMS switch combines the micro-processing technology with the structure of the electromechanical switch, thereby being beneficial to realizing the integration, the miniaturization and the low power consumption of the switch. The structure design of the thermal drive MEMS switch is carried out according to the thermal expansion effect of solid materials, and the device layer of the existing MEMS switch is mainly divided into a metal structure and a silicon structure. The metal structure has good conductivity, but the structure is easy to deform in the processing process, the line width resolution is low and the cost is high; the silicon structure has high shape precision but the contact resistance of the silicon structure is large, and the switch conduction effect is not good. For practical applications, the existing structure obviously cannot meet the relevant performance requirements.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a liquid metal-based physical latching MEMS switch, which combines a metal liquid drop with a silicon-based structure and introduces a physical latching mechanism, and has the characteristics of enhanced contact effect, low power consumption and the like.
In order to achieve the purpose, the invention adopts the technical scheme that:
a liquid metal-based physical latching MEMS switch comprises a cover plate 100, a metal liquid drop 200 and a switch driving device 300, wherein the cover plate 100 is connected with the switch driving device 300 through the metal liquid drop 200 in a matching way;
the cover plate 100 consists of a first glass plate 110 and a second SU8 photoresist structure layer 120 thereon, wherein the second SU8 photoresist structure layer 120 comprises a frame 121 for packaging and matching with the switch driving device 300 and a sleeve 122 for storing the metal droplets 200;
the driving device 300 comprises a silicon device layer 310, a silicon dioxide isolation layer 320 and a high-resistance silicon substrate layer 330, wherein the silicon dioxide isolation layer 320 is prepared on the high-resistance silicon substrate layer 330, and the silicon device layer 310 is prepared on the silicon dioxide isolation layer 320; the thickness of the silicon device layer 310 is 50 μm; a first fixed electrode 314a is arranged on one side of the silicon device layer 310, the first fixed electrode 314a extends into the front side of a liquid storage tank 315 for placing the metal liquid drop 200, and movable structures formed by three groups of V-shaped electric heating actuators are manufactured on the rear side and the left side and the right side of the liquid storage tank 315;
the first actuator 311a is a V-shaped beam array structure, and two ends of the first actuator 311a are connected to the first metal pad 312 a; the front end of the middle beam of the first actuator 311a is connected with a wedge-shaped slider 317, the front end of the wedge-shaped slider 317 is connected with a movable electrode 316, and the front end of the movable electrode 316 is positioned at the rear side of a liquid storage tank 315 for placing the metal liquid drop 200; the rear end of the middle beam of the first actuator 311a is connected to the spring 313, and the rear end of the spring 313 is connected to the second fixed electrode 314b of the movable electrode 316;
the second actuator 311b and the third actuator 311c are in a V-shaped beam array structure, have the same shape and size, and are symmetrically distributed in a face-to-face manner; two ends of the second actuator 311b are connected to the second metal pad 312b, the front end of the middle beam of the second actuator 311b is connected to the second limiting rod 318b, and the end of the second limiting rod 318b is wedge-shaped; both ends of the third actuator 311c are connected to the third metal pad 312c, the front end of the middle beam of the third actuator 311c is connected to the third limiting rod 318c, and the end of the third limiting rod 318c is wedge-shaped; the second driver 311b and the third driver 311c are vertically distributed with the first driver 311 a; stop blocks 319 are manufactured on the side surfaces of the second limiting rod 318b and the third limiting rod 318c, and the displacement range of the limiting rods in the direction except the axial driving force direction is regulated; the second actuator 311b and the third actuator 311c respectively drive the second limiting rod 318b and the third limiting rod 318c to move along the axial direction; the ends of the second stop bar 318b and the third stop bar 318c are in mating relationship with the sides of the wedge sled 317.
During assembly, the structure surface of the cover plate 100 is upward; preparing a metal droplet 200 in a sleeve 122 on the cover plate 100; spreading glue on the surfaces of the second SU8 photoresist structure layer 120 of the cover plate 100 and the silicon device layer 310 of the switch driving device 300 at corresponding positions and bonding the two layers together; completing the assembly of the switch, turning the switch upside down with the substrate layer 330 as the bottom surface; the droplet 200 is enclosed between the cartridge 122 and the reservoir 315 of the drive device; the first fixed electrode 314a of the switch is always in contact with the metal droplet 200, and the movable electrode 316 can be driven by electricity to linearly displace to contact with or separate from the metal droplet 200, so as to turn on or off the switch circuit.
The side length of the silicon substrate layer 330 is within 4600 mu m; a plurality of back cavities are formed in the silicon substrate layer 330 and located below the movable structure of the device layer 310, wherein three back cavities with the same size are formed below the first actuator 311a, the second actuator 311b and the third actuator 311c respectively, the same back cavities are formed below the second limiting rod 318b and the third limiting rod 318c, and back cavities are formed below the wedge-shaped slider 317 and the intermediate rod of the first actuator 311a behind the wedge-shaped slider 317 respectively, which is helpful for releasing the movable structure of the device layer 310 and exerting the thermal expansion effect.
The metal liquid drop 200 is made of liquid gallium indium tin alloy, wherein gallium accounts for 68.5%, indium accounts for 21.5%, and tin accounts for 10%.
The height of the second SU8 photoresist structure layer 120 is slightly higher than the diameter of the metal droplet 200, and is higher than the diameter of the metal droplet 200 within 50 μm.
The driving device 300 is fabricated on an SOI wafer.
The front end of the movable electrode 316 is needle-shaped, so that the movable electrode can be conveniently penetrated into the metal droplet 200 under the action of the driving force.
The second metal pad 312b and the third metal pad 312c are connected in parallel and controlled by a direct current voltage U1; the first metal pad 312a is controlled by the two-way dc voltage U2; switching signal lines are connected to the first fixed electrode 314a and the fixed end second fixed electrode 314b of the movable electrode 316, respectively; two direct current voltages U1 and U2 are applied according to a time sequence, and the movable structure of the switch is driven to move in sequence in a positive direction to close the switch; the two-way dc voltages U1 and U2 are applied in a time sequence to reverse the movable structure of the drive switch to act in sequence to open the switch.
Compared with the traditional mechanical switch, the invention has the advantages that:
compared with the mode that the metal liquid drop 200 of the gallium indium tin alloy is used as the intermediate joint for connecting the first fixed electrode 314a and the movable electrode 316 and is in direct contact with the contact surface of the electrodes, the invention has the advantages of large contact area and enhanced contact effect, so that more obvious and stable current signals can be generated when the switch circuit is conducted.
The existing switches based on liquid metal are few, generally adopt mercury as a movable electrode, the mercury is volatile toxic liquid, the working state is unstable, and the mercury has great harm to human bodies. The liquid metal 200 of the liquid gallium indium tin alloy adopted by the invention is low in toxicity and pollution-free, has the advantages of high conductivity, low melting point and difficult volatilization, and can be used as a substitute of mercury.
The wedge-shaped sliding block 317 is matched with the limiting rod, the switch circuit can be kept in a closed state and an open state by using the self-locking force of the structure, and only current is supplied when the switch needs to be switched between the states, so that the external continuous energy supply is not needed. The design of the physical latch structure enables the switch to be reliably opened/closed and greatly reduces the power consumption of the switch device.
The invention combines the thermoelectric effect with the MEMS switch technology, has large driving displacement and effectively reduces the volume and the weight of the device.
Drawings
Fig. 1 is a schematic perspective view of the present invention.
Fig. 2 is a sectional view taken along the line a of fig. 1.
Fig. 3 is a schematic structural diagram of the cover plate of the present invention.
Fig. 4 is a schematic structural diagram of the driving device of the present invention.
Fig. 5 is an assembly flow diagram of the present invention.
FIG. 6 is a circuit diagram of the present invention, in which (a) is a circuit connection diagram of a switch structure, (b) is a voltage phase diagram of a forward driving signal, and (c) is an electrical connection and pulse phase diagram of a voltage phase diagram of a reverse driving signal.
Fig. 7 is a schematic diagram of the operation of the movable structure of the present invention, in which (a) is an initial state diagram, (b) is a diagram of the second limiting rod 318b and the third limiting rod 318c moving away from each other, (c) is a diagram of the wedge-shaped slider 317 moving forward, and (d) is a diagram of the second limiting rod 318b and the third limiting rod 318c locking the wedge-shaped slider 317.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Referring to fig. 1 and 2, the liquid metal-based physical latching MEMS switch includes a cover plate 100, a metal droplet 200 and a switch driving device 300, wherein the cover plate 100 is connected with the switch driving device 300 through the metal droplet 200.
Referring to fig. 3, the cover plate 100 is composed of a first glass plate 110 and a second SU8 photoresist structure layer 120 thereon, the second SU8 photoresist structure layer 120 includes a frame 121 for packaging and matching with the switch driving device 300 and a sleeve 122 for storing a metal droplet 200, and the packaged switch observes the working condition of the movable structure through the transparent first glass plate 110; the height of the second SU8 photoresist structure layer 120 is slightly larger (<50 μm) than the diameter of the metal droplet 200, which ensures that the metal droplet 200 is encapsulated and the device is turned upside down after assembly is completed, and the first fixed electrode 314a remains in contact with the metal droplet 200.
Referring to fig. 2 and 4, the driving device 300 is fabricated on an SOI wafer, and includes a silicon device layer 310 (with a thickness of 50 μm), a silicon dioxide isolation layer 320, and a high-resistance silicon substrate layer 330, where the silicon dioxide isolation layer 320 is fabricated on the high-resistance silicon substrate layer 330, and the silicon device layer 310 is fabricated on the silicon dioxide isolation layer 320; a first fixed electrode 314a is arranged on one side of the silicon device layer 310, the first fixed electrode 314a extends into the front side of a liquid storage tank 315 for placing the metal liquid drop 200, and movable structures formed by three groups of V-shaped electric heating actuators are manufactured on the rear side and the left side and the right side of the liquid storage tank 315;
the first actuator 311a is a V-shaped beam array structure, and two ends of the first actuator 311a are connected to the first metal pad 312 a; the front end of the middle beam of the first actuator 311a is connected with a wedge-shaped slider 317, the front end of the wedge-shaped slider 317 is connected with a movable electrode 316, and the front end of the movable electrode 316 is positioned at the rear side of a liquid storage tank 315 for placing the metal liquid drop 200; the front end of the movable electrode 316 is needle-shaped, so that the movable electrode can be conveniently penetrated into the metal liquid drop 200 under the action of the driving force; the rear end of the middle beam of the first actuator 311a is connected to the spring 313, and the rear end of the spring 313 is connected to the second fixed electrode 314b of the movable electrode 316;
the second actuator 311b and the third actuator 311c are in a V-shaped beam array structure, have the same shape and size, and are symmetrically distributed in a face-to-face manner; two ends of the second actuator 311b are connected to the second metal pad 312b, the front end of the middle beam of the second actuator 311b is connected to the second limiting rod 318b, and the end of the second limiting rod 318b is wedge-shaped; both ends of the third actuator 311c are connected to the third metal pad 312c, the front end of the middle beam of the third actuator 311c is connected to the third limiting rod 318c, and the end of the third limiting rod 318c is wedge-shaped; the second driver 311b and the third driver 311c are vertically distributed with the first driver 311 a; stop blocks 319 are formed on the side surfaces of the second stopper rod 318b and the third stopper rod 318c, and define the displacement range of the stopper rods in the direction other than the driving force direction (axial direction); the second actuator 311b and the third actuator 311c respectively drive the second limiting rod 318b and the third limiting rod 318c to move along the axial direction; the ends of the second stop bar 318b and the third stop bar 318c are in mating relationship with the sides of the wedge sled 317.
The side length of the silicon substrate layer 330 is within 4600 mu m; a plurality of back cavities are formed in the silicon substrate layer 330 and located below the movable structure of the device layer 310, wherein three back cavities with the same size are formed below the first actuator 311a, the second actuator 311b and the third actuator 311c respectively, the same back cavities are formed below the second limiting rod 318b and the third limiting rod 318c, and back cavities are formed below the wedge-shaped slider 317 and the intermediate rod of the first actuator 311a behind the wedge-shaped slider 317 respectively, which is helpful for releasing the movable structure of the device layer 310 and exerting the thermal expansion effect.
The metal liquid drop 200 is made of liquid gallium indium tin alloy, wherein gallium accounts for 68.5%, indium accounts for 21.5%, and tin accounts for 10%; the liquid metal is larger in surface tension, and can spontaneously form a liquid metal ball when being dripped on a plane, and the gallium indium tin alloy is used as a low-toxicity and pollution-free liquid metal, has the advantages of high conductivity, low melting point, difficult volatilization and the like, can replace mercury and is used as an intermediate joint for connecting the first fixed electrode 314a and the movable electrode 316.
Referring to fig. 5 (a), the cover plate 100 is assembled with the structure facing upward; referring to (b), a metal droplet 200 is prepared in a sleeve 122 on the cap plate 100; referring to (c), glue is spread on the surfaces of the second SU8 photoresist structure layer 120 of the cover plate 100 and the silicon device layer 310 of the switch driving device 300 at corresponding positions and adhered together; referring to (d), the assembly of the switch is completed, the switch is turned upside down with the substrate layer 330 as the bottom surface; the droplet 200 is enclosed between the cartridge 122 and the reservoir 315 of the drive device; the first fixed electrode 314a of the switch is always in contact with the metal droplet 200, and the movable electrode 316 can be driven by electricity to linearly displace to contact with or separate from the metal droplet 200, so as to turn on or off the switch circuit.
Referring to fig. 6 (a), the second metal pad 312b and the third metal pad 312c are connected in parallel and controlled by a dc voltage U1; the first metal pad 312a is controlled by the two-way dc voltage U2; switching signal lines are connected to the first fixed electrode 314a and the fixed end second fixed electrode 314b of the movable electrode 316, respectively; referring to fig. 6 (b), two direct current voltages U1 and U2 are applied in a time sequence to sequentially act to drive the movable structure of the switch in a forward direction to close the switch; referring to fig. 6(c), two-way dc voltages U1 and U2 are applied in a time sequence to reverse the movable structure of the drive switch to act sequentially to open the switch.
The working principle of the invention is as follows:
referring to fig. 7 (a), in the initial state, the first fixed electrode 314a is in contact with the liquid metal 200, the movable electrode 316 is spaced from the liquid metal 200, and the switch is in a normally open state; referring to fig. 6 (b) and fig. 7 (b), one path of driving voltage U1 changes from low level to high level, and drives the second limiting rod 318b and the third limiting rod 318c to move away from each other, so that the wedge-shaped sliding block 317 is separated from the constraint; referring to fig. 6 (b) and fig. 7 (c), the one-way driving voltage U1 maintains a high level, the two-way driving voltage U2 changes from a low level to a high level, the movable electrode 316 and the wedge-shaped slider 317 move to the maximum displacement position along the direction of the metal droplet 200 under the driving force, the needle-shaped end of the movable electrode 316 pierces into the metal droplet 200, and the switch circuit is closed; referring to fig. 6 (b) and fig. 7 (d), the two driving voltages U2 continue to maintain a high level, the one driving voltage U1 changes from a high level to a low level, the second limiting rod 318b and the third limiting rod 318c do a relative movement back to the initial position under the action of the structural restoring force without a driving force, and at this time, the wedge-shaped ends of the second limiting rod 318b and the third limiting rod 318c are engaged with the side surface of the wedge-shaped slider 317; referring to fig. 6 (b), the two paths of driving voltages are also changed from high level to low level, and the wedge-shaped slider 317 has no driving force and tends to move downward under the action of restoring force, but cannot return to the initial position due to being constrained by the second limiting rod 318b and the third limiting rod 318c, that is, physical latching of the switch in the closed state is realized; the stop block 319 blocks the second stopper rod 318b and the third stopper rod 318c from displacing in the non-axial direction after the switch is locked, so that the movable electrode 316 is reliably brought into contact with the metal droplet 200.
Similarly, referring to fig. 6(c), the two paths of driving voltages U2 keep low level, the one path of driving voltage U1 changes from low level to high level, and the second limiting rod 318b and the third limiting rod 318c move away from each other under the driving force, so that the wedge-shaped slider 317 is separated from the constraint of the limiting rods and returns to the initial position under the action of restoring force, and the unlocking of the switch and the switching from closed to normally open are realized.
The MEMS switch based on the liquid metal is different from the traditional switch structure, and has the following characteristics: firstly, the metal liquid drop 200 of the liquid gallium indium tin alloy is used as an intermediate joint for connecting the first fixed electrode 314a and the movable electrode 316, when the switch is closed, the metal contact contacts with the liquid metal in a wrapping mode, so that the contact effect is enhanced, the contact resistance is small, and therefore, when the switch is switched on, the current signal is obvious, and the stability is high; secondly, liquid gallium indium tin alloy is used as a contact material, and compared with common mercury, the liquid gallium indium tin alloy has the advantages of low toxicity, environmental protection, difficult volatilization, high conductivity and the like; the switch structure based on the physical latch principle can realize self-locking of the on and off states, and does not need external continuous energy supply when the states are kept, so that the contact reliability is improved, and the power consumption of the system is reduced; and fourthly, the thermoelectric effect is combined with the MEMS switching technology, and the device is small in size and light in weight.
Claims (8)
1. A liquid metal based physical latching MEMS switch, characterized by: the device comprises a cover plate (100), a metal liquid drop (200) and a switch driving device (300), wherein the cover plate (100) is connected with the switch driving device (300) in a matching way through the metal liquid drop (200);
the cover plate (100) consists of a first glass plate (110) and a second SU8 photoresist structure layer (120) on the first glass plate, and the second SU8 photoresist structure layer (120) comprises a frame (121) used for packaging and matching with the switch driving device (300) and a sleeve (122) used for storing the metal liquid drops (200);
the switch driving device (300) comprises a silicon device layer (310), a silicon dioxide isolation layer (320) and a high-resistance silicon substrate layer (330), wherein the silicon dioxide isolation layer (320) is prepared on the high-resistance silicon substrate layer (330), and the silicon device layer (310) is prepared on the silicon dioxide isolation layer (320); the thickness of the silicon device layer (310) is 50 μm; a first fixed electrode (314a) is arranged on one side of the silicon device layer (310), the first fixed electrode (314a) extends into the front side of a liquid storage tank (315) for placing the metal liquid drop (200), and movable structures formed by three groups of V-shaped electric heating actuators are manufactured on the rear side and the left side and the right side of the liquid storage tank (315);
the first actuator (311a) is of a V-shaped beam array structure, and two ends of the first actuator (311a) are connected with the first metal bonding pad (312 a); the front end of a middle beam of the first actuator (311a) is connected with a wedge-shaped slider (317), the front end of the wedge-shaped slider (317) is connected with a movable electrode (316), and the front end of the movable electrode (316) is positioned at the rear side of a liquid storage tank (315) for placing the metal liquid drop (200); the rear end of the middle beam of the first actuator (311a) is connected with a spring (313), and the rear end of the spring (313) is connected with a second fixed electrode (314b) of the movable electrode (316);
the second actuator (311b) and the third actuator (311c) are in a V-shaped beam array structure, the shapes and the sizes of the second actuator and the third actuator are the same, and the second actuator and the third actuator are symmetrically distributed in a face-to-face mode; two ends of the second actuator (311b) are connected with the second metal bonding pad (312b), the front end of a middle beam of the second actuator (311b) is connected with the second limiting rod (318b), and the tail end of the second limiting rod (318b) is wedge-shaped; two ends of a third actuator (311c) are connected with a third metal pad (312c), the front end of a middle beam of the third actuator (311c) is connected with a third limiting rod (318c), and the tail end of the third limiting rod (318c) is wedge-shaped; the second actuator (311b) and the third actuator (311c) are respectively and vertically distributed with the first actuator (311 a); stop blocks (319) are manufactured on the side surfaces of the second limiting rod (318b) and the third limiting rod (318c), and the displacement ranges of the second limiting rod (318b) and the third limiting rod (318c) in the directions except the axial driving force direction are regulated; the second actuator (311b) and the third actuator (311c) respectively drive the second limiting rod (318b) and the third limiting rod (318c) to move along the axial direction; the tail ends of the second limiting rod (318b) and the third limiting rod (318c) are respectively matched with the side surface of the wedge-shaped sliding block (317).
2. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: during assembly, the structure surface of the cover plate (100) is upward; preparing a metal droplet (200) in a sleeve (122) on a cover plate (100); coating glue on the surfaces of the second SU8 photoresist structure layer (120) of the cover plate (100) and the corresponding position of the silicon device layer (310) of the switch driving device (300) and bonding the surfaces together; completing the assembly of the switch, and turning the switch upside down to make the high-resistance silicon substrate layer (330) as a bottom surface; the metal droplet (200) is enclosed between the cartridge (122) and a reservoir (315) of the switch drive device; the first fixed electrode (314a) of the switch is always kept in contact with the metal liquid drop (200), and the movable electrode (316) generates linear displacement under electric drive to be in contact with or separated from the metal liquid drop (200), so that a switch circuit is switched on or off.
3. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: the side length of the high-resistance silicon substrate layer (330) is within 4600 mu m; a plurality of back cavities are formed in the high-resistance silicon substrate layer (330) and located below a movable structure of the silicon device layer (310), three back cavities with the same size are formed below the first actuator (311a), the second actuator (311b) and the third actuator (311c), the same back cavities are formed below the second limiting rod (318b) and the third limiting rod (318c), and the back cavities are formed below the wedge-shaped sliding block (317) and a middle rod of the first actuator (311a) behind the wedge-shaped sliding block and are beneficial to release of the movable structure of the silicon device layer (310) and exertion of a thermal expansion effect.
4. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: the metal liquid drop (200) adopts liquid gallium indium tin alloy, wherein gallium accounts for 68.5%, indium accounts for 21.5%, and tin accounts for 10%.
5. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: the height of the second SU8 photoresist structure layer (120) is higher than the diameter of the metal droplet (200) and is higher than the diameter of the metal droplet (200) within 50 μm.
6. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: the switch driving device (300) is prepared on an SOI wafer.
7. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: the front end of the movable electrode (316) is needle-shaped, so that the movable electrode can be conveniently penetrated into the metal liquid drop (200) under the action of a driving force.
8. A liquid metal based physical latching MEMS switch as claimed in claim 1 wherein: connecting the second metal pad (312b) and the third metal pad (312c) in parallel, and controlling by a direct current voltage U1; the first metal pad (312a) is controlled by the two-way direct current voltage U2; switching signal lines are connected to the first fixed electrode (314a) and the second fixed electrode (314b) of the movable electrode (316), respectively; one path of direct current voltage U1 and two paths of direct current voltage U2 are applied according to a time sequence, and the movable structures of the switches are driven to move in sequence in a positive direction to close the switches; the one-way DC voltage U1 and the two-way DC voltage U2 are applied according to a time sequence, and are sequentially acted by a movable structure of a reverse drive switch to disconnect the switch.
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| US7142087B2 (en) * | 2004-01-27 | 2006-11-28 | Lucent Technologies Inc. | Micromechanical latching switch |
| US7603898B2 (en) * | 2007-12-19 | 2009-10-20 | Honeywell International Inc. | MEMS structure for flow sensor |
| KR101051732B1 (en) * | 2009-11-12 | 2011-07-25 | 한국전자통신연구원 | RF MMS switch using shape change of micro liquid metal droplet |
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