CN101719575B - Electrothermal-driven in-plane bistable radio frequency microswitch - Google Patents
Electrothermal-driven in-plane bistable radio frequency microswitch Download PDFInfo
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- CN101719575B CN101719575B CN2010103002316A CN201010300231A CN101719575B CN 101719575 B CN101719575 B CN 101719575B CN 2010103002316 A CN2010103002316 A CN 2010103002316A CN 201010300231 A CN201010300231 A CN 201010300231A CN 101719575 B CN101719575 B CN 101719575B
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Abstract
The invention relates to an electrothermal-driven in-plane bistable radio frequency microswitch belonging to the technical field of micro electromechanics. The electrothermal-driven in-plane bistable radio frequency microswitch comprises an electrothermal-driven mechanism, a mechanical locking mechanism and a signal conversion mechanism, wherein the electrothermal-driven mechanism is positioned under the mechanical locking mechanism; and the mechanical locking mechanism is connected with the signal conversion mechanism. The invention can realize the mechanical locking by using a pair of locking contacts, does not require continuous power consumption when keeping in a stable state, also fully develops the advantages of large driving force, high displacement power density and convenient integrated manufacture of an electrothermal driver and can be used as the actuation form of the mechanical locking structure of the switch. The switch has simple structure, foreseeable radio frequency (RF) characteristic, possibility of batch manufacture and practical application and suitability for integral manufacture.
Description
Technical field
What the present invention relates to is a kind of device of micro-electromechanical system field, specifically is a kind of in-plane bistable radio frequency microswitch of electrothermal drive.
Background technology
In the last few years, radio-frequency micro electromechanical system technology (RF MEMS) had all shown great potential aspect civil and military, and one of them very important field is exactly the RF mems switch.With regard at present common switch, be master's semiconductor switch with transistor and diode, power capacity is low, and resistance loss is high, and the speed that cut-off frequency further improves is slowed down gradually; The power capacity of electro-mechanical switches is big, but power consumption is big, and operating rate is quite slow, and can only use in low-frequency range.And the RF mems switch had both combined the advantage of semiconductor switch and mechanical switch, had overcome their shortcoming again; Resistance loss is low, and isolation is very high, and power capacity is big, and power consumption is little of ignoring.
In mems switch, no power consumption realizes that stable state keeps becoming the target that everybody chases day by day.With utilize magnetic circuit locking phase ratio, novel mechanical latching structure is no matter all have tangible advantage on prepared still is device complexity.Static driven is the most general drive form of present use in the mems switch, yet static driven generally needs tens volts driving voltage, and this control voltage with present CMOS (CMOS) standard does not match.And utilize electrothermal drive, driving voltage generally to be no more than 5V, and compatible mutually with the CMOS standard, and the contact force of switch is maximum under the equal conditions.In addition, the mechanical latching structure generally needs bigger actuating force, and the energy density that heat drives is the highest, and actuating force is maximum, therefore is suitable as most the actuating form of mechanical latching structure.
Retrieval through to prior art finds that people such as Joo-Young Choi deliver one piece of article of " RF MEMS switch using silicon cantilevers " (RF mems switch that utilizes silicon cantilever to realize) on EKC2008 Proceedings of theEU-Korea Conference on Science and Technology (Korea S scientific and technical conference collection of thesis 135-142 page or leaf was grabbed in Europe in 1998).Reported a kind of outer silicon cantilever structure in the document, this structure has spring unit and blocking mechanism, drive down and can realize bistable state receiving the external heat expansive force, and the stable state maintenance need not continue power consumption.They have successfully prepared the RF MEMS bistable switch of a thermodynamic-driven to utilize this structure, and have outstanding RF characteristic.But this switch needs extra outside assembling, and volume is very big, and switching response is very slow, thereby is not suitable for large-scale mass production, and slow excessively switching rate has also limited its practical application.
Further retrieval is found; People such as Medea Cesar Degbe are at International Symposium on Signals; Systems and Flectronics has delivered " Design of a radio-frequency bistable switch using a thermalactuation on a dielectric membrane " (a kind of design that utilizes the radio frequency bistable switch that on dielectric film, prepares of heat driving) on 2007 (signal, system and the collection of thesis 547-550 of the electronics international symposium pages or leaves in 2007).The document has designed two cantilever beams that have hard contact, and through different overlapping orders, the contact is in different positions, thereby can the holding wire of break-make on dielectric film.Though this design seems to be simple, obviously be not suitable for utilizing micromachining technology to realize the integrated manufacturing of one, and very high for the required precision of assembling; In addition, cantilever beam has been in stress always in the most initial state, receives very big influence the fatigue life of device.
Summary of the invention
The present invention is directed to the above-mentioned deficiency that prior art exists, a kind of in-plane bistable radio frequency microswitch of electrothermal drive is provided, utilize a pair of locking contact to realize mechanical caging, stable state need not continue power consumption when keeping.Give full play to the advantage that the electro actuating force is big, the displacement power density is high, be convenient to integrated manufacturing simultaneously, as the actuating form of this switch machinery closedown structure.This construction of switch is simple, is suitable for the one manufacturing, has foreseeable RF characteristic, has the possibility of manufacturing in batches and practical application.
The present invention realizes through following technical scheme; The present invention includes: electro-thermal actuation mechanism, mechanical lock and conversion of signals mechanism; Wherein: electro-thermal actuation mechanism be positioned at mechanical lock under, mechanical lock is connected with conversion of signals mechanism.
Described electro-thermal actuation mechanism comprises: the secondary driver of master driver electrode, electric heating master driver, secondary actuator electrode and electric heating; Wherein: the master driver electrode links to each other with the electric heating master driver; Secondary actuator electrode links to each other with the secondary driver of electric heating, and the end of the secondary driver of electric heating master driver and electric heating is oppositely arranged over against mechanical lock respectively and does not contact.
Described conversion of signals mechanism comprises: rods, contact head and holding wire, wherein: an end of rods links to each other with mechanical lock, and the other end links to each other with contact head, and contact head is oppositely arranged with holding wire and does not contact.
Described mechanical lock comprises: two mooring anchors, main boom beam, secondary cantilever beam, main locking contact and secondary locking contacts; Wherein: the outer end of main boom beam is connected with two mooring anchors respectively with the outer end of secondary cantilever beam; The inner of main boom beam is connected with secondary locking contact with main locking contact respectively with the inner of secondary cantilever beam; Main locking contact links to each other with conversion of signals mechanism, and main locking contact is oppositely arranged with secondary locking contact and does not contact.
When the present invention worked, through the master driver electrode is applied pulse electrical signal, electric heating master driver expanded by heating was realized lengthwise movement, thereby promoted the motion of main boom beam, and main locking contact upwards promotes secondary locking contact.Two locking contacts interact; And at the beam of main boom beam to forming a force component; Spring structure makes the beam of cantilever beam to all greatly reducing with longitudinal rigidity; Thereby this cantilever beam have the rotation and the compression tendency, thereby let main locking contact can more easily push secondary locking contact aside, reduced requirement to the hot driver actuating force.In the motion of main boom beam, rods is also done lengthwise movement, contact head pressing holding wire.When the electric heating master driver was replied, the main boom beam also had the trend of return motion, but secondary locking contact plays inhibition to it.The arc of main locking contact is fastened on the secondary locking contact, and two cantilever beams overlap and form the stable state structure.Under the regulating action of rods, contact head is pressed together on the holding wire always, has realized the function that switch " leaves ".In like manner, when secondary actuator electrode was applied pulse electrical signal, secondary locking contact was pushed main locking contact aside, and the main boom beam returns initial position, and contact head also breaks away from switch " disconnection " with holding wire thereupon.
Compare with the radio frequency microswitch for preparing based on the MEMS technology at present, the present invention has significant technical advantage.At first, the present invention can utilize existing micromachining technology to realize integrated manufacturing fully, does not need extra assembling, helps realizing making in batches.Secondly, the present invention adopts the motion mode in the face, and it is little to take up room, and satisfies the requirement of complanation production and application.In addition, utilize mechanical caging to realize that stable state keeps, only in the process that state switches, need the energy input, thereby significantly reduced the switch power consumption.At last, adopted the thinking of each functional unit apportion design of electro-thermal actuation mechanism, mechanical lock and conversion of signals mechanism, the global design of switch can not receive the optimization change of certain parts and influence.Such as when improving the transmission line design raising switch RF of conversion of signals mechanism characteristic, can not influence other parts of switch.
Description of drawings
Fig. 1 is a perspective view of the present invention;
Fig. 2 is a front plan view of the present invention;
Fig. 3 is the conversion of signals mechanism perspective view of embodiment;
Among the figure: 1 master driver electrode, 2V type array electric heating master driver, 3 secondary actuator electrodes, the secondary driver of 4V type array electric heating, 5 mooring anchors, 6 main boom beams, 7 main locking contacts, 8 secondary locking contacts, 9 secondary cantilever beams, 10 rods, 11 contact heads, 12 holding wires, 13 insulation dielectric layers.
Embodiment
Elaborate in the face of embodiments of the invention down, present embodiment provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment being to implement under the prerequisite with technical scheme of the present invention.
As shown in Figure 1; Present embodiment comprises: master driver electrode 1, electric heating master driver 2, secondary actuator electrode 3, the secondary driver 4 of electric heating, mooring anchor 5, main boom beam 6, main locking contact 7, secondary locking contact 8, secondary cantilever beam 9, rods 10, contact head 11, holding wire 12 and insulation dielectric layer 13; Wherein: master driver electrode 1 links to each other with electric heating master driver 2; Secondary actuator electrode 3 links to each other with the secondary driver 4 of electric heating; The end of electric heating master driver 2 and the secondary driver 4 of electric heating is oppositely arranged over against main boom beam 6 and secondary cantilever beam 9 respectively and does not contact; The outer end of the outer end of main boom beam 6 and secondary cantilever beam 9 is connected with two mooring anchors 5 respectively; The inner of the inner of main boom beam 6 and secondary cantilever beam 9 is connected with secondary locking contact 8 with main locking contact 7 respectively, and main locking contact 7 links to each other with rods 10, and main locking contact 7 is oppositely arranged with secondary locking contact 8 and does not contact; The other end of rods 10 links to each other with contact head 11, and contact head 11 is oppositely arranged with holding wire 12 and does not contact.
The secondary driver 4 of described electric heating master driver 2 and electric heating is the array combination of a plurality of monocrystalline silicon V-type electro.Array design can improve the actuating force of this switch drive part, thereby has guaranteed that main locking contact 7 can push away secondary locking contact 8 smoothly.
All there is one section S type spring the outer end of described main boom beam 6 and secondary cantilever beam 9, and the width of S type spring is about 50 microns.The beam that the existence of S type spring can reduce this cantilever beam is to rigidity; Make beam that the tendency of compression arranged when receiving beam to active force; And the existence of spring structure makes the rotation of this cantilever beam be more prone to; And stiff cantilevers beam part has guaranteed that this part of cantilever beam still has certain rigidity being activated the masterpiece time spent, and phenomenons such as bending can not take place.
All less than the width of main boom beam and secondary cantilever beam, width fades to about 10 microns from about 50 microns the width of described main locking contact 7 and secondary locking contact 8.
The vertically the shortest of the initial position of described contact head 11 and holding wire 12 is spaced apart 5 microns.
Described contact head 11 is the insulator block of rectangular configuration, and its end face deposits the plain layer of gold dollar.
Described holding wire 12 is a radio-frequency transmission line, and is positioned at above the insulation dielectric layer 13.
As shown in Figure 2, described main boom beam 6 and secondary cantilever beam 9 secondary cantilever beams are at the inclination angle that laterally all has θ, and the angle of θ is 10 ~ 30 degree.This design has reduced main locking contact 7 and had pushed away the difficulty of secondary locking contact 8, and when having reduced that major-minor locking contact locks each other the elastic-restoring force of structure to the adverse effect of mechanical stability.Main boom beam 6 all has bigger rigidity with secondary cantilever beam 9 stiff cantilevers beams part, and the width of stiff cantilevers beam part is gradual change, and width fades to about 50 microns from about 200 microns.
Described main locking contact 7 is the identical arcuate structure of shape with the cross section of secondary locking contact 8, and it is vertically the shortest to be spaced apart 2 ~ 5 microns, and the lateral overlap distance is 5 ~ 10 microns, and the opening direction of arcuate structure is consistent.Being designed with of arc is beneficial to main locking contact 7 and when stressed, slips over secondary locking contact 8, and when lock-out state, two arcs interlock each other, have improved the elastic-restoring force that relies on structure at this moment to open the difficulty of this mechanical caging, have guaranteed the mechanical stability of this switch.
Described rods 10 is for having the bonding jumper of spring structure, and the width of this rods 10 is less than the width of main boom beam 6 and secondary cantilever beam 9, and width is 10 ~ 30 microns.The existence of spring structure reduced bar to rigidity, make that rods 10 can be more prone to be compressed.Simultaneously the width of rods 10 is less, less to the influence of main boom beam 6 like this, has guaranteed that in the course of work of switch rods 10 has only played one and regulated displacement, and the actuating force and the closedown structure of switch is not had higher requirement.
As shown in Figure 3, contact head 11 is insulating material rectangular blocks, deposits the gold dollar element at the front end face near holding wire 12 1 sides.The chemical property of gold is very stable, is difficult for oxidized or corrosion, and has outstanding conductivity, thereby can significantly reduce the contact resistance of switch and insert loss.Contact head 11 faces the opening of holding wire 12, and the lateral length of contact head 11 is greater than the opening length of holding wire 12, makes contact head 11 receiving pressing holding wire 12 when promoting.Contact head 11 keeps certain distance with holding wire 12; Contact head 11 effective pressing holding wire still when this distance must guarantee that main boom beam 6 is realized mechanical cagings with secondary cantilever beam 9, and the elastic-restoring force in the rods 10 is not enough to open this mechanical caging at this moment.Therefore this distance is the core of this switch designs, must be complementary with the space layout of V-type array electric heating major-minor driver, major-minor locking contact.
Claims (6)
1. the in-plane bistable radio frequency microswitch of an electrothermal drive; Comprise: electro-thermal actuation mechanism, mechanical lock and conversion of signals mechanism; It is characterized in that: electro-thermal actuation mechanism be positioned at mechanical lock under, mechanical lock is connected with conversion of signals mechanism;
Described electro-thermal actuation mechanism comprises: the secondary driver of master driver electrode, electric heating master driver, secondary actuator electrode and electric heating; Wherein: the master driver electrode links to each other with the electric heating master driver; Secondary actuator electrode links to each other with the secondary driver of electric heating, and the end of the secondary driver of electric heating master driver and electric heating is oppositely arranged over against mechanical lock respectively and does not contact;
Described conversion of signals mechanism comprises: rods, contact head and holding wire, and wherein: an end of rods links to each other with mechanical lock, and the other end links to each other with contact head, and contact head is oppositely arranged with holding wire and does not contact;
Described mechanical lock comprises: two mooring anchors, main boom beam, secondary cantilever beam, main locking contact and secondary locking contacts; Wherein: the outer end of main boom beam is connected with two mooring anchors respectively with the outer end of secondary cantilever beam; The inner of main boom beam is connected with secondary locking contact with main locking contact respectively with the inner of secondary cantilever beam; Main locking contact links to each other with conversion of signals mechanism, and main locking contact is oppositely arranged with secondary locking contact and does not contact;
Described main locking contact is the identical arcuate structure of shape with the cross section of secondary locking contact, and it is vertically the shortest to be spaced apart 2～5 microns, and the lateral overlap distance is 5～10 microns, and the width of arch section fades to 10 microns from 50 microns.
2. the in-plane bistable radio frequency microswitch of electrothermal drive according to claim 1 is characterized in that, the secondary driver of described electric heating master driver and electric heating is the array combination of a plurality of monocrystalline silicon V-type electro.
3. the in-plane bistable radio frequency microswitch of electrothermal drive according to claim 1 is characterized in that, all there is one section S type spring the outer end of described main boom beam and secondary cantilever beam, and the width of S type spring is 50 microns.
4. the in-plane bistable radio frequency microswitch of electrothermal drive according to claim 1 is characterized in that, the stiff cantilevers beam partial width of described main boom beam and secondary cantilever beam is gradual change, and width fades to 50 microns from 200 microns.
5. the in-plane bistable radio frequency microswitch of electrothermal drive according to claim 1 is characterized in that, laterally all there is an inclination angle in the stiff cantilevers beam part of described main boom beam and secondary cantilever beam, and this inclination angle is 10～30 degree.
6. the in-plane bistable radio frequency microswitch of electrothermal drive according to claim 1 is characterized in that, described rods is the bonding jumper with spring structure, and the width of this rods is less than the width of main boom beam and secondary cantilever beam, and width is 10～30 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010103002316A CN101719575B (en) | 2010-01-13 | 2010-01-13 | Electrothermal-driven in-plane bistable radio frequency microswitch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010103002316A CN101719575B (en) | 2010-01-13 | 2010-01-13 | Electrothermal-driven in-plane bistable radio frequency microswitch |
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| CN101719575A CN101719575A (en) | 2010-06-02 |
| CN101719575B true CN101719575B (en) | 2012-08-29 |
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| CN2010103002316A Expired - Fee Related CN101719575B (en) | 2010-01-13 | 2010-01-13 | Electrothermal-driven in-plane bistable radio frequency microswitch |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456485A (en) * | 2010-10-26 | 2012-05-16 | 王叶 | Micro electro-mechanical switch applied to high-frequency application and manufacturing method |
| CN105651428A (en) * | 2013-12-03 | 2016-06-08 | 赵牧青 | String force measurement device with tension springs |
| CN106370520A (en) * | 2015-07-21 | 2017-02-01 | 北京大学 | Method for micro anchor leg torsion bonding strength by using thermal driving |
| CN104993192A (en) * | 2015-07-29 | 2015-10-21 | 东南大学 | Thermally-driven RF MEMS switch |
| CN107628587B (en) * | 2017-09-21 | 2019-07-23 | 中国传媒大学 | A kind of multistage electrothermal drive MEMS actuator and its manufacturing method |
| CN110443994B (en) * | 2018-05-03 | 2020-05-22 | 浙江农林大学 | Wireless remote switch controller |
| CN109192560B (en) * | 2018-09-13 | 2020-11-27 | 西安电子科技大学 | MEMS inertial switch based on three-section type short oblique beam bistable structure |
| CN110045497B (en) * | 2019-04-23 | 2021-09-03 | 南京理工大学 | Electric heating micro-drive control light path on-off device based on U + V type structure |
Citations (4)
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| CN1302445A (en) * | 1999-05-03 | 2001-07-04 | 克罗诺斯集成微系统公司 | Multi-dimensional scalable displacement enabled microelectromechanical actuator structure and arrays |
| WO2002005012A2 (en) * | 2000-07-11 | 2002-01-17 | Arizona State University | Optical mems switching array with embedded beam-confining channels and method of operating same |
| CN1675728A (en) * | 2002-08-14 | 2005-09-28 | 英特尔公司 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
| CN101226856A (en) * | 2007-01-18 | 2008-07-23 | 富士通株式会社 | Micro-switching device and method of manufacturing the same |
-
2010
- 2010-01-13 CN CN2010103002316A patent/CN101719575B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302445A (en) * | 1999-05-03 | 2001-07-04 | 克罗诺斯集成微系统公司 | Multi-dimensional scalable displacement enabled microelectromechanical actuator structure and arrays |
| WO2002005012A2 (en) * | 2000-07-11 | 2002-01-17 | Arizona State University | Optical mems switching array with embedded beam-confining channels and method of operating same |
| CN1675728A (en) * | 2002-08-14 | 2005-09-28 | 英特尔公司 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
| CN101226856A (en) * | 2007-01-18 | 2008-07-23 | 富士通株式会社 | Micro-switching device and method of manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| Medea Cesar Degbe.Design of a radio-frequency bistable switch using a thermalactuation on a dielectric membrane.《IEEE，International Symposium on Signals， Systems and Flectronics，2007》.2007, * |
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