CN112235948A - Flexible circuit board preparation method, flexible circuit board prepared by flexible circuit board preparation method and application of flexible circuit board - Google Patents
Flexible circuit board preparation method, flexible circuit board prepared by flexible circuit board preparation method and application of flexible circuit board Download PDFInfo
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- CN112235948A CN112235948A CN202011091541.1A CN202011091541A CN112235948A CN 112235948 A CN112235948 A CN 112235948A CN 202011091541 A CN202011091541 A CN 202011091541A CN 112235948 A CN112235948 A CN 112235948A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1338—Chemical vapour deposition
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
Abstract
The invention belongs to the field of preparation of 5G electronic materials, and particularly relates to a flexible circuit board preparation method, a flexible circuit board prepared by the same and application of the flexible circuit board. The preparation method comprises the following preparation steps: (1) performing high-energy ion beam deposition on the surface of the polymer to obtain a first hybrid layer; (2) obtaining an oxide layer on the surface of the first hybrid layer through vapor deposition; (3) performing high-energy ion beam deposition on the surface of the oxide layer to obtain a second hybrid layer; (4) and depositing low-energy ion beams on the surface of the second hybrid layer to obtain the metal layer. The invention uses high-energy ion beams to form a hybrid layer, and effectively solves the problem of the bonding force between a polymer and an oxide and between the oxide and a metal layer. The circuit board prepared by the invention has the advantages of low roughness, good compactness and few defects, and reduces the occurrence of processes such as wire breakage, whisker growth and the like in the electromigration process.
Description
Technical Field
The invention belongs to the field of preparation of 5G electronic materials, and particularly relates to a flexible circuit board preparation method, a flexible circuit board prepared by the same and application of the flexible circuit board.
Background
5G communication has brought urgent demands on the aspects of high frequency, low transmission loss, high density, high integration and the like of circuit boards. The MPI high-frequency flexible copper-clad plate is mainly applied to an FPC (flexible printed circuit) antenna board for high-frequency signal transmission, and the terminal is applied to 5G mobile phones, Internet of things, smart homes, unmanned vehicles, VR (virtual reality) technologies and the like. The Flexible Copper Clad Laminate (FCCL) is a substrate of a Flexible Printed Circuit (FPC), and the existing single-sided or double-sided adhesive-free FCCL mainly adopts three preparation technologies, namely a coating method, a pressing method and a sputtering method. The lamination method improves the bonding force with the resin by increasing the roughness of the copper foil, and the increase of the roughness causes serious transmission loss. The thickness limit of the rolled copper foil is difficult to break through, the uniformity of the copper foil prepared by the thinning method is poor, and the cost is high. The coating method also has the disadvantages of high cost for thinning the copper foil and incapability of directly coating the ultra-thin copper foil. The copper foil prepared by the sputtering method has low binding force generally.
Therefore, the circuit board etched by the copper-clad plate prepared by the existing preparation method has low peel strength, and the circuit board with narrow line width and line spacing can have electromigration phenomenon, thereby causing the failure of the circuit. The high-density integrated circuit flexible packaging substrate in the fields of intelligent terminals, electric automobiles and the like has wider space in the future. At present, the manufacturing technology of the ultrathin high-end flexible circuit board with high density and high integration is mastered in the great hands abroad, and the bottleneck technology for producing the integrated circuit high-end copper-clad plate for realizing high-end application such as 5G and the like seriously restricts the development of China in the field of integrated circuit flexible packaging.
Disclosure of Invention
The invention aims to provide a flexible circuit board aiming at the defects of the prior art, which utilizes an ion beam technology to carry out surface cleaning and damage the polymer bond connection on the surface through a high-energy ion beam system, realizes the sufficient mixing hybridization of the polymer and the metal ions at the nano-scale depth, and solves the binding force between the polymer and an oxide coating. The detailed technical scheme of the invention is as follows.
A preparation method of a flexible circuit board comprises the following preparation steps:
(1) performing high-energy ion beam deposition on the surface of the polymer to obtain a first hybrid layer;
(2) obtaining an oxide layer on the surface of the first hybrid layer through vapor deposition;
(3) performing high-energy ion beam deposition on the surface of the oxide layer to obtain a second hybrid layer;
(4) and depositing low-energy ion beams on the surface of the second hybrid layer to obtain the metal layer.
In the invention, the ion energy is lower energy ion beam with less than or equal to 5keV, and higher energy ion beam with more than 5 keV.
Preferably, the oxide of the oxide layer is SiO2、AlO2、ZrO2One or more of the combination of (1) and (2), the surface resistivity is more than 1010Ωm。
Preferably, the oxide layer has a thickness of 10 to 100nm and a roughness of not more than 0.5 μm.
Preferably, the vapor deposition is electron beam vacuum deposition, the working pressure is (0.0001-0.005) Pa, the working temperature is 20-200 ℃, and the working power is 6-20 kW.
Preferably, in the step (4), the deposition voltage of the metal layer is 15V-50V, the deposition current is 40-120A, the beam current intensity is 0.5-5A, and the deposition thickness is 2-5 μm.
Preferably, the metal layer comprises a first metal layer and a second metal layer, the metal of the first layer is one of Ti, Ni, Cr and Ag, the thickness of the first layer is 10-100nm, and the metal of the second metal layer is Cu, the thickness of the second layer is 200nm-5 μm.
Preferably, the ions of the high-energy ion beam in the step (1) and the step (3)The beam energy is 2-12keV and the treatment dose is 1 x 1014-1*1018ions/cm2Degree of vacuum 1 x 10-5-5*10-3Pa, the target material is any metal or metal-nonmetal alloy target material.
The invention also protects a flexible circuit board which is prepared according to the preparation method.
Preferably, the flexible circuit board is a circuit with a line width line distance of 25 microns formed by the base material, no obvious dendritic crystal is formed in 50h under the voltage of 50-100V, and no short circuit is formed.
The invention also protects the application of the flexible circuit board.
The invention has the following beneficial effects:
(1) on the basis of traditional deposition, the invention uses high-energy ion beams to form a hybrid layer, and can effectively solve the problem of the bonding force between a polymer and an oxide and between the oxide and a metal layer.
(2) The oxide layer formed by vapor deposition can wrap the copper wire, reduce the influence of temperature, humidity, environmental atmosphere and the like, and inhibit the occurrence of electromigration.
(3) The circuit board prepared by the invention has the advantages of low roughness, good compactness and few defects, and reduces the occurrence of processes such as wire breakage, whisker growth and the like in the electromigration process.
Drawings
FIG. 1 is a schematic view of a production apparatus of the present invention;
FIG. 2 deposition of SiO on the PI surface and PI surface in example 1 of the present invention2Electron microscope image of the coating.
Reference numerals: a polymer unwinding system 101, a vapor deposition system 102, a low energy ion beam system 103, a high energy ion beam system 104, a high energy ion beam system 105, a polymer winding system 106, a vacuum chamber 107, and an ion beam 108.
Detailed Description
The following further describes embodiments of the present invention with reference to the accompanying drawings:
preparation examples
The device of the invention is shown in fig. 1, a polymer unreeling system 101 and a polymer reeling system 106 are arranged in a vacuum chamber 107, a polymer substrate passes through the unreeling system 101 and then sequentially passes through 4 processing rollers, namely a high-energy ion beam system 104, a vapor deposition system 102, a high-energy ion beam system 105 and a low-energy ion beam system 103, ion beams 108 are deposited on the surface of the substrate, four-step process treatment is completed, and finally the polymer reeling system 107 is reached to complete preparation.
Example 1
Preparing a PI polymer flexible copper-clad plate according to the following steps:
(1) preparing a first hybrid layer, and depositing on the surface of the PI polymer through a high-energy ion beam system to obtain a hybrid layer of the polymer and metal ions; ion beam energy 12keV, treatment dose 1 x 1018ions/cm2Degree of vacuum 5 x 10-3Pa, the target material is Ag target material with the thickness of 100 nm;
(2) preparing an oxide layer, preparing an insulating oxide on the first hybrid layer by vapor deposition, taking SiO2 as an evaporation source, and controlling the working pressure of the vacuum chamber to be 5.0 multiplied by 10-3Pa, the substrate temperature is 150 ℃, the power is 20kW, and the oxide thickness is 100 nm;
(3) preparing a second hybrid layer, and depositing on the surface of the first oxide layer by high-energy ion beam with an ion beam energy of 12keV and a treatment dosage of 1 x 10 to obtain a hybrid layer of polymer and metal ions18ions/cm2Degree of vacuum 5 x 10-3Pa, the target material is Ag;
(4) and preparing a metal layer, and depositing the metal layer on the second hybrid layer through a low-energy ion beam system, wherein the deposited metal is Cu, the deposition voltage is 50V, the deposition current is 120A, the beam intensity is 5A, and the thickness is 3 mu m.
Examples 2 to 4 and comparative example 1 differ from example 1 in the process parameters, and for the sake of simplicity of description, the main parameters of each example and comparative example are as follows.
TABLE 1 Process parameter Table for examples and comparative examples
The examples 1 to 4 and the comparative example were subjected to a peel strength test and a bending number test by using a 90-degree peel strength tester. The test results are shown in table 2.
The PI surface and the PI surface of example 1 were deposited with SiO2The surface of the coating was subjected to a scanning electron microscope test (Hitachi-S4800) and the test results are shown in FIG. 2.
TABLE 2 test results table
Examples | Peel strength N/mm | Number of times of bending |
Example 1 | 1.2 | 4023 |
Example 2 | 1.3 | 4300 |
Example 3 | 1.1 | 4000 |
Example 4 | 1.2 | 4100 |
Example 5 | 1.4 | 4350 |
Comparative example 1 | 0.5 | 3056 |
Comparative example 2 | 0.4 | 2182 |
As can be seen from the analysis of fig. 2, the PI film before deposition is on the left, and the PI film after deposition is on the right, the above oxides are preferably deposited on the surface of the substrate, and the surface of the substrate becomes very dense due to the presence of the oxides.
As is clear from the comparison in Table 1, the peel strength and the number of times of bending of examples 1 to 4 were significantly improved as compared with those of comparative examples 1 to 2. Comparing example 1 with example 2, it is clear that the present invention using 2 metal deposition layers can improve the promotion of the improvement of the peel strength and the number of times of bending, and obtain more effects.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (10)
1. The preparation method of the flexible circuit board is characterized by comprising the following preparation steps:
(1) performing high-energy ion beam deposition on the surface of the polymer to obtain a first hybrid layer;
(2) obtaining an oxide layer on the surface of the first hybrid layer through vapor deposition;
(3) performing high-energy ion beam deposition on the surface of the oxide layer to obtain a second hybrid layer;
(4) and depositing low-energy ion beams on the surface of the second hybrid layer to obtain the metal layer.
2. The method according to claim 1, wherein the oxide of the oxide layer is SiO2、AlO2、ZrO2One or more of the combination of (1) and (2), the surface resistivity is more than 1010Ωm。
3. The method according to claim 2, wherein the oxide layer has a thickness of 10 to 100nm and a roughness of not more than 0.5 μm.
4. The production method according to claim 3, wherein the vapor deposition is electron beam vacuum deposition, the operating pressure is (0.0001 to 0.005) Pa, the operating temperature is 20 to 200 ℃, and the operating power is 6 to 20 kW.
5. The production method according to claim 1 or 4, wherein the deposition voltage of the metal layer in the step (4) is 15V to 50V, the deposition current is 40 to 120A, the beam current intensity is 0.5 to 5A, and the deposition thickness is 2 to 5 μm.
6. The method according to claim 5, wherein the metal layer comprises a first metal layer and a second metal layer, the metal of the first metal layer is one of Ti, Ni, Cr and Ag and has a thickness of 10-100nm, and the metal of the second metal layer is Cu and has a thickness of 200nm-5 μm.
7. The production method according to claim 2, wherein the high energy ion beam in the steps (1) and (3) has an ion beam energy of 2 to 12keV and a treatment dose of 1 x 1014-1*1018ions/cm2Vacuum, vacuumDegree 1 x 10-5-5*10-3Pa, the target material is a metal or metal-nonmetal alloy target material.
8. A flexible wiring board produced by the production method according to any one of claims 1 to 7.
9. The flexible circuit board of claim 8, wherein the flexible circuit board is a substrate, and the lines with a line width of 25 μm by 25 μm are free from obvious dendrite formation and short circuit formation for 50h under a voltage of 50-100V.
10. Use of the flexible wiring board produced by the production method according to any one of claims 1 to 7.
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CN101340774A (en) * | 2008-08-01 | 2009-01-07 | 浙江大学 | Flexible glue-free copper coated plate and preparation thereof |
CN102646595A (en) * | 2011-11-11 | 2012-08-22 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method and display device thereof |
CN103339700A (en) * | 2011-01-04 | 2013-10-02 | Oc欧瑞康巴尔采斯有限公司 | Method for manufacturing high performance multi layer ceramic capacitors |
CN107236928A (en) * | 2017-07-20 | 2017-10-10 | 北京师范大学 | Flexible parent metal circuit board and preparation method thereof and equipment |
CN107620051A (en) * | 2017-09-04 | 2018-01-23 | 武汉光谷创元电子有限公司 | Copper-clad plate and its manufacture method |
CN110923624A (en) * | 2019-12-13 | 2020-03-27 | 北京师范大学 | Ion beam printing method based on ion beam printing system |
CN111005003A (en) * | 2019-12-09 | 2020-04-14 | 北京师范大学 | Antenna preparation method replacing laser direct forming technology |
CN111534802A (en) * | 2020-04-21 | 2020-08-14 | 江西沃格光电股份有限公司 | Flexible composite film, preparation method thereof and electronic device |
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2020
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Patent Citations (9)
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CN1321060A (en) * | 1999-10-13 | 2001-11-07 | 莫顿国际公司 | Laser imaging of thin film circuit material |
CN101340774A (en) * | 2008-08-01 | 2009-01-07 | 浙江大学 | Flexible glue-free copper coated plate and preparation thereof |
CN103339700A (en) * | 2011-01-04 | 2013-10-02 | Oc欧瑞康巴尔采斯有限公司 | Method for manufacturing high performance multi layer ceramic capacitors |
CN102646595A (en) * | 2011-11-11 | 2012-08-22 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method and display device thereof |
CN107236928A (en) * | 2017-07-20 | 2017-10-10 | 北京师范大学 | Flexible parent metal circuit board and preparation method thereof and equipment |
CN107620051A (en) * | 2017-09-04 | 2018-01-23 | 武汉光谷创元电子有限公司 | Copper-clad plate and its manufacture method |
CN111005003A (en) * | 2019-12-09 | 2020-04-14 | 北京师范大学 | Antenna preparation method replacing laser direct forming technology |
CN110923624A (en) * | 2019-12-13 | 2020-03-27 | 北京师范大学 | Ion beam printing method based on ion beam printing system |
CN111534802A (en) * | 2020-04-21 | 2020-08-14 | 江西沃格光电股份有限公司 | Flexible composite film, preparation method thereof and electronic device |
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