CN112234912A - Black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation device based on waste heat of diesel engine flue gas - Google Patents
Black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation device based on waste heat of diesel engine flue gas Download PDFInfo
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- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 title claims abstract description 119
- 238000010248 power generation Methods 0.000 title claims abstract description 70
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000002918 waste heat Substances 0.000 title claims abstract description 57
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000003546 flue gas Substances 0.000 title claims abstract description 37
- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 238000006073 displacement reaction Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000000779 smoke Substances 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 18
- 239000010408 film Substances 0.000 description 10
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- 239000007789 gas Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 3
- 229940075613 gadolinium oxide Drugs 0.000 description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
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- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- OZKRUQCUAKLSTB-UHFFFAOYSA-N zinc gadolinium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[Gd+3] OZKRUQCUAKLSTB-UHFFFAOYSA-N 0.000 description 2
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- 238000005265 energy consumption Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/0005—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing non-specific motion; Details common to machines covered by H02N2/02 - H02N2/16
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation device based on diesel engine flue gas waste heat. The invention belongs to the field of diesel engine waste heat power generation systems. The invention aims to solve the technical problems of limited application and low efficiency of the conventional circulating waste heat power generation system due to the limitation of the volume and the mass of the conventional circulating waste heat power generation system. The invention discloses a black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation device based on waste heat of diesel engine flue gas, which comprises a flue gas heat exchanger, a heat conduction gasket, a heat emitter, a photovoltaic cell, a heat sink and a piezoelectric nano displacement device which are sequentially arranged from top to bottom, wherein a nano-scale vacuum gap is formed between the heat emitter and the photovoltaic cell, and the size of the vacuum gap is controlled by the piezoelectric nano displacement device. The thermophotovoltaic power generation device realizes the miniaturization and light weight of waste heat utilization equipment, and well converts the waste heat of the smoke of the diesel engine into direct current electric energy which can be directly utilized without additional pipelines and mechanical parts.
Description
Technical Field
The invention belongs to the field of diesel engine waste heat power generation systems, and particularly relates to a black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation device based on diesel engine flue gas waste heat.
Background
The need to reduce the import of petroleum to ensure the safety of petroleum supply can be achieved by two methods, one is to develop alternative fuels by technological progress and reduce the dependence on petroleum. The other is the technical innovation of various industries, and the energy utilization rate or the waste energy recovery rate is improved.
In recent years, awareness of the use of low grade heat sources has attracted extensive research by researchers around the world. Particularly in the field of diesel engines, as fuel costs increase, attention is gradually being directed towards further improving the fuel efficiency of diesel engines in the hope of achieving higher quality propulsion systems and lower operating costs. It is reported that only a fraction (about 40-50%) of the energy released by the combustion of fuel in a diesel engine is converted to useful work, while the residual heat contained in the exhaust gas produced is about 20-40% of the energy released by the fuel. The waste of such huge waste heat greatly increases the running cost and also increases the pollution to the environment. The thermal efficiency of diesel engines is mainly dependent on the overall pressure ratio, the performance of today's diesel engines has been optimized to a high level, and further improvements by means of known concepts seem to be increasingly difficult, and new technologies have to be considered to reduce the fuel consumption and environmental pollution of future diesel engines. The Argonne national laboratory in the us in 2013 states that: among various energy-saving technologies of the engine, waste heat energy recovery (WHR) has the greatest efficiency improvement and energy-saving potential. The proportion of exhaust is larger in the dissipated energy, and research shows that the exhaust energy quality is higher. Therefore, the effective recycling of the energy can reduce the energy consumption of the internal combustion engine and the CO2And the pollutant discharge has important economic value and social significance.
So far, the exhaust gas waste heat recovery technologies which are most concerned mainly include the following technologies:
1) thermoelectric material: the thermoelectric module can generate voltage when temperature difference exists on two sides and form current, the larger the temperature difference is, the higher the voltage is, and therefore exhaust waste heat energy can be converted into electric energy
2) Organic Rankine Cycle (ORC): the organic working medium absorbs the heat of the exhaust gas in the evaporator, then superheated steam is generated to push the expansion machine to generate power to do work, and finally the power is sent back to the evaporator by the working medium pump after being cooled in the condenser so as to circularly form and recover the waste heat energy of the exhaust gas.
In all the prior waste heat recovery technologies, the thermoelectric material has the advantages of small size, light weight, no mechanical rotating part, no noise during working, no liquid or gaseous medium, no environmental pollution, accurate temperature control, high response speed, long service life of devices and the like. But the seebeck coefficient of the current material is low, the efficiency of the thermoelectric material-based thermoelectric power generation system is too low (< 10%), and the prospect in practical application is limited to a certain extent. Organic Rankine cycle waste heat is the most mature technology for commercial use at present and is widely applied to industrial national defense such as ship gas turbine waste heat power generation, ship diesel engine waste heat power generation and the like. But the volume of the expansion machine and other parts in the waste heat cycle is limited, and the volume and the mass of the waste heat system have great limitations. Available space of a large bus or a large truck is very limited, oil consumption is very sensitive to the self weight of the automobile, and research shows that the oil consumption can be increased by about 0.7L every hundred kilometers when the weight of the automobile is increased by 100 Kg. Meanwhile, in order to meet the size requirement of a passenger car or a truck on a waste heat system, the size of system components of the organic Rankine cycle waste heat utilization system is reduced at the cost of sacrificing the performance of the system. As the number of NTUs (related to the heat exchange area) of the heat exchangers in the system increases, the amount of heat exchange, work done and thermal efficiency of the system increases. But as they shrink in size, the system will experience a dramatic reduction in its capacity. In conclusion, the defects can seriously limit the application prospect of the organic Rankine cycle waste heat power generation system on a passenger car or a truck. The scientific problem of finding a waste heat power generation technology with light weight and high efficiency is slowly raised, and becomes a key factor influencing or even restricting the development and application of the waste heat recovery technology of the engine of the passenger car or the truck.
Disclosure of Invention
The invention aims to solve the technical problems of limited application and low efficiency of the conventional circulating waste heat power generation system due to the limitation of the volume and the mass of the conventional circulating waste heat power generation system, and provides a black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation device based on the waste heat of diesel engine flue gas.
The invention discloses a black phosphorus/sodium bromide stack near-field radiation heat photovoltaic power generation device based on waste heat of diesel engine flue gas, which comprises a flue gas heat exchanger, a heat conduction gasket, a heat emitter, a photovoltaic cell, a heat sink and a piezoelectric nano displacement device which are sequentially arranged from top to bottom, wherein the heat conduction gasket is adhered to the flue gas heat exchanger, the heat emitter is adhered to the heat conduction gasket, the heat sink is fixedly connected with the piezoelectric nano displacement device, the photovoltaic cell is adhered to the heat sink, a nano-scale vacuum gap is formed between the heat emitter and the photovoltaic cell, and the size of the vacuum gap is controlled by the piezoelectric nano displacement device.
Further limited, the thermal emitter is formed by a multilayer black phosphorus/sodium bromide stack structure, wherein the thickness of sodium bromide in the single-layer black phosphorus/sodium bromide is 10 nm-200 nm, and the thickness of black phosphorus is 1.7 nm.
Further, the thermal emitter is formed by a 30-100 layer black phosphorus/sodium bromide stack structure.
Further defined, the thermal emitter is obtained by periodic deposition of black phosphorus and sodium bromide, wherein the deposition method is magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
Further defined, the material of the photovoltaic cell is a narrow-band semiconductor material.
Further, the narrow-band semiconductor material is specifically one of mercury cadmium telluride, indium antimonide and indium arsenide.
Further, a metal electrode is welded on the photovoltaic cell, the metal electrode is silver, tin, copper or gold, and the metal electrode and the photovoltaic cell are in ohmic contact.
Further, the photovoltaic cell provides a forward voltage through a metal electrode thereon, and the voltage is 0V-0.15V.
Further defined, the thickness of the photovoltaic cell is 10 μm to 1 cm.
Further defined, the distance between the thermal emitter and the photovoltaic cell is 10 nm-100 nm of a nanometer-scale vacuum gap.
Further defined, the stroke of the piezoelectric nano displacement device is larger than 10 mm.
Further, the temperature difference between the thermal emitter and the photovoltaic cell is controlled to be 300-600K.
Compared with the prior art, the invention has the advantages that:
1) the invention provides a high-efficiency and light thermophotovoltaic power generation device which is suitable for a diesel engine smoke waste heat environment, and can well convert the diesel engine smoke waste heat into direct current electric energy which can be directly utilized on one hand, and no additional pipeline or mechanical part is needed. On the other hand, the device is sufficiently portable to ensure as little space as possible. The waste heat utilization device has the characteristics of small volume and light weight, and realizes the miniaturization and light weight of the waste heat utilization device.
2) According to the near-field radiation thermal photovoltaic power generation system based on the black phosphorus/sodium bromide stack of the diesel engine flue gas waste heat, the diesel engine flue gas waste heat forms a thermal emitter through the black phosphorus/sodium bromide stack, the waste heat can be effectively converted into photon energy above the band gap frequency of a semiconductor by utilizing the ultrahigh emission capacity of the black phosphorus/sodium bromide stack, the semiconductor generates a large amount of electron transitions, the electrons/holes can escape from the electron/hole pairs, and stable current is formed under the action of bias voltage outside a photovoltaic cell, so that energy output is generated. And because the radiation heat exchange quantity between the black phosphorus/sodium bromide stack structure and the semiconductor is basically concentrated above the band gap frequency of the semiconductor, the energy utilization efficiency is very high, theoretically, the power generation efficiency can break through the Shockley-Queti limit, and the actual power generation efficiency is as high as 42%. Meanwhile, due to the near-field radiation heat exchange between the thermal emitter and the photovoltaic cell, the ultrahigh photon tunneling density can support the current density which is far higher than the thermoelectric material thermoelectric generation.
3) The black phosphorus/sodium bromide stack near-field radiation thermophotovoltaic power generation system based on the waste heat of the diesel engine flue gas is particularly suitable for systems with complex working conditions, such as diesel engines. By virtue of the ultrafast corresponding characteristic of photon tunneling in near-field radiation, the black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation system can timely match the residual heat power generation requirements required by corresponding different working conditions.
4) The "distance" between the heat emitter and the photovoltaic cell in the thermophotovoltaic power generation device of the present invention refers to a vertical distance, and the distance is in the order of "nanometers", which means: the characteristic wavelength is 9.7 mu m when the characteristic wavelength is smaller than the thermal radiation characteristic wavelength and is 300K, the processing cost is sharply improved when the characteristic wavelength is too small, and the photon radiation power and the power generation efficiency are seriously reduced when the distance is too large, so the power generation capacity of the invention is reduced.
5) The heat emitter in the thermophotovoltaic power generation device is composed of multiple layers of black phosphorus/sodium bromide films, the thickness of the sodium bromide in a single layer of film is 10-100 nm, the black phosphorus between each periodic layer can generate a strong surface excimer interference effect due to too small thickness, the emission capability of the heat emitter can be greatly inhibited, and the surface excimer generated by the black phosphorus far away from a photovoltaic cell can be excessively dissipated in the excessively thick sodium bromide film due to too large thickness, so that the emission capability of the heat emitter can be inhibited. The invention maximizes the emissive power of the thermal emitter by controlling the thickness of the sodium bromide, which is ideally close to the distance of the vacuum gap between the thermal emitter and the photovoltaic cell.
6) The thickness of the photovoltaic cell in the thermophotovoltaic power generation device is kept within the range of 10 micrometers to 1cm, the excessively small thickness can cause the photovoltaic cell to be incapable of well absorbing the radiation heat from a thermal emitter, so that the photon radiation power is attenuated, and the excessively large thickness can cause the auger recombination intensity of the semiconductor thin film to be increased, so that the system power generation efficiency is reduced.
7) The temperature difference between the waste heat-photon energy conversion end consisting of the heat conduction gasket and the heat emitter and the photon energy-electric energy conversion end consisting of the photovoltaic cell and the heat sink in the thermal photovoltaic power generation device is kept within the range of 300K-600K. Too high a temperature differential may exceed the heat sink's heat dissipation capability, while too high a temperature differential may exceed the melting points of black phosphorus and sodium bromide, resulting in damage to the device. An excessively small temperature difference can cause the Planck harmonic oscillator energy of photons above the frequency of the photovoltaic cell to be excessively low, and the power generation efficiency and the power generation capacity of the system are seriously reduced.
Drawings
FIG. 1 is a structural diagram of a black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation device based on the waste heat of diesel engine flue gas; 1-a flue gas heat exchanger, 2-a heat conducting gasket, 3-a heat emitter, 4-a photovoltaic cell, 5-a heat sink and 6-a piezoelectric nano displacement device;
FIG. 2 is a structural view of the heat emitter 3 in FIG. 1;
FIG. 3 is a graph showing the power generation density of the near-field thermal radiation photovoltaic power generation system in accordance with the first embodiment and the first to fourth comparative examples at different vacuum gaps; 1-black phosphorus/sodium bromide stack structure of embodiment one, 2-single-layer black phosphorus/sodium bromide structure of comparative example one, 3-indium tin oxide of comparative example two, 4-zinc gadolinium oxide of comparative example three, 5-tungsten film of comparative example four;
fig. 4 is a graph showing current-voltage characteristics of the thermophotovoltaic power generation device according to the first embodiment and the first to third comparative examples at different bias voltages; 1-black phosphorus/sodium bromide stack structure of embodiment one, 2-single-layer black phosphorus/sodium bromide structure of comparative example one, 3-indium tin oxide of comparative example two, 4-zinc gadolinium oxide of comparative example three;
fig. 5 is a graph showing power generation density/efficiency characteristics of the thermophotovoltaic power generation device according to the first embodiment and the first to third comparative examples at different bias voltages; 1-black phosphorus/sodium bromide stack structure of embodiment one, 2-single layer black phosphorus/sodium bromide structure of comparative example one, 3-indium tin oxide of comparative example two, 4-zinc gadolinium oxide of comparative example three.
Detailed Description
Embodiment one (see fig. 1 to 2): the near-field radiation thermal photovoltaic power generation device of the black phosphorus/sodium bromide stack based on the waste heat of the diesel engine flue gas comprises a flue gas heat exchanger 1, a heat conduction gasket 2, a heat emitter 3, a photovoltaic cell 4, a heat sink 5 and a piezoelectric nano displacement device 6 which are sequentially arranged from top to bottom, wherein the heat conduction gasket 2 is attached to the flue gas heat exchanger 1 through heat conduction glue, the heat emitter 3 is attached to the heat conduction gasket 2 through the heat conduction glue, the heat sink 5 is fixedly connected with the piezoelectric nano displacement device 6 through threads, the photovoltaic cell 4 is attached to the heat sink 5 through the heat conduction glue, a nano-scale vacuum gap is formed between the heat emitter 3 and the photovoltaic cell 4, and the size of the vacuum gap is controlled through the piezoelectric nano displacement device 6;
the flue gas heat exchanger 1 is a plate heat exchanger and is used for collecting waste heat of diesel oil and flue gas; the heat conducting gasket 2 is a copper film;
the flue gas heat exchanger 1, the heat conducting gasket 2 and the heat emitter 3 form an integrated waste heat-photon energy conversion end; the photovoltaic cell 4, the heat sink 5 and the piezoelectric nano displacement device 6 form an integrated photon energy-electric energy conversion end;
the thermal emitter 3 is formed by a 30-layer black phosphorus/sodium bromide stack structure, specifically, black phosphorus is deposited on a sodium bromide substrate through vacuum evaporation, a new sodium bromide film is plated on the black phosphorus through magnetron sputtering, and 30 cycles of deposition are carried out periodically in this way to obtain the thermal emitter 3, wherein the thickness of sodium bromide in single-layer black phosphorus/sodium bromide is 10nm, and the thickness of the black phosphorus is 1.7 nm; the temperature of the thermal emitter 3 is 810K;
the photovoltaic cell 4 is made of indium antimonide with a band gap frequency of
The lower band gap frequency can ensure that the semiconductor electronic transition process can be participated by wider spectral radiation frequency; the thickness of the photovoltaic cell 4 is 100 μm, and the temperature of the photovoltaic cell 4 is 300K; the temperature difference between the thermal emitter 3 and the photovoltaic cell 4 is 510K;
a metal electrode is welded on the photovoltaic cell 4, wherein the metal positive electrode is copper, the metal negative electrode is copper, the metal electrode is in ohmic contact with the photovoltaic cell 4, the photovoltaic cell 4 provides positive voltage (bias voltage) through the metal electrode on the photovoltaic cell 4, and the voltage is 0-0.15V;
the distance between the heat emitter 3 and the photovoltaic cell 4 is 10 nm-100 nm, the vacuum gap is controlled by a piezoelectric nano displacement device 6, the piezoelectric nano displacement device 6 is 110.45.1-D-SC-HV model of SMARPOD company, the stroke of the piezoelectric nano displacement device is larger than 10mm, and the specific method for regulating and controlling the distance of the vacuum gap is as follows:
firstly, the thermal emitter 3 and the photovoltaic cell 4 are in close contact by adjusting the piezoelectric nano displacement device 6, so that assembly dislocation is avoided, when the piezoelectric nano displacement device 6 cannot be normally stepped, the thermal emitter 3 and the photovoltaic cell 4 are judged to be in close contact, then the piezoelectric nano displacement device 6 is adjusted to be stepped backwards, and the piezoelectric nano displacement device 6 is locked after being stepped by 10-100 nm, so that a stable nano-scale vacuum gap between the thermal emitter 3 and the photovoltaic cell 4 is controlled.
The heat sink 5 is a copper substrate with the thickness of 20nm, the heat sink needs to ensure enough thickness so as to conveniently conduct and dissipate the residual heat of the photovoltaic cell, and the heat sink is connected with the piezoelectric nano displacement platform through a thread structure, wherein the connection is ensured to be tight.
Comparative example one: the present embodiment is different from the first embodiment in that: the thermal emitter 3 is a single layer black phosphorus/sodium bromide structure. Other steps and parameters are the same as those in the first embodiment.
Comparative example two: the present embodiment is different from the first embodiment in that: the thermal emitter 3 is an indium tin oxide semiconductor transparent conductive film structure. Other steps and parameters are the same as those in the first embodiment.
Comparative example three: the present embodiment is different from the first embodiment in that: the thermal emitter 3 is a zinc oxide gadolinium thin film structure. Other steps and parameters are the same as those in the first embodiment.
Comparative example four: the present embodiment is different from the first embodiment in that: the thermal emitter 3 is a tungsten thin film structure. Other steps and parameters are the same as those in the first embodiment.
As can be seen from fig. 3, the thermal photovoltaic power generation device according to the first embodiment of the present application is a thermal photovoltaic power generation device composed of a black phosphorus/sodium bromide stackCompared with the first to fourth comparative examples, the emitter 3 can greatly enhance the power generation density of the thermal photovoltaic power generation system, the remarkable enhancement is particularly remarkable when the vacuum gap between the thermal emitter 3 and the photovoltaic cell 4 is 10nm, and the theoretical power generation density of the black phosphorus/sodium bromide stack near-field thermal radiation photovoltaic power generation system based on the waste heat of the diesel engine flue gas can be close to 1000kWm-2The ultrahigh energy density far exceeds the thermoelectric power generation and organic Rankine cycle power generation of the conventional thermoelectric material.
As can be seen from fig. 4, when the bias voltage is less than 0.14V, the black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation device based on the residual heat of the diesel engine flue gas according to the embodiment of the present invention can stably provide a photo-induced current, and the density of the photo-induced current generated by the heat emitter 3 composed of the black phosphorus/sodium bromide stack is far higher than that of a single-layer black phosphorus/sodium bromide structure, an indium tin oxide semiconductor transparent conductive film structure, a zinc oxide gadolinium film structure, and a tungsten film structure.
As can be seen from fig. 5, in the black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation device based on the residual heat of the diesel engine flue gas according to the first embodiment of the present invention, when the external bias voltage is 0.1V, the power generation efficiency can reach 42%, and the carnot cycle limit at this time is 63.75%. It can be seen that the black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation device based on the waste heat of the diesel engine flue gas, which is disclosed by the first embodiment of the invention, has extremely high waste heat utilization efficiency, and compared with the thermoelectric material, the thermoelectric power generation efficiency is only 7%, and the organic Rankine cycle power generation efficiency is only not more than 15%.
In conclusion, the black phosphorus/sodium bromide stack near-field radiation thermal photovoltaic power generation system based on the smoke waste heat of the diesel engine converts the smoke waste heat into high-density high-energy photons based on near-field radiation, and further prompts a photovoltaic cell to generate high-density photoproduction current, so that the high-efficiency recycling of the smoke waste heat of the diesel engine is realized. The characteristic of ultrahigh thermal emission capability of the thermal emitter is realized by utilizing the multiple elliptic surface excimer characteristic of black phosphorus/sodium bromide stack, so that the invention can provide high power generation capability and power generation efficiency. Meanwhile, the black phosphorus/sodium bromide stack near-field radiant heat photovoltaic power generation system has the advantages of no power consumption, no moving parts, light weight and the like, and is particularly suitable for waste heat environments with extremely high requirements on space quality, such as passenger cars or trucks.
Claims (10)
1. The utility model provides a black phosphorus/sodium bromide stack near field radiation heat photovoltaic power generation facility based on diesel engine flue gas waste heat, its characterized in that, this heat photovoltaic power generation facility includes from last to down flue gas heat exchanger (1), heat conduction gasket (2), heat emitter (3), photovoltaic cell (4), heat sink (5) and piezoelectricity nanometer displacement device (6) that set gradually, heat conduction gasket (2) are pasted on flue gas heat exchanger (1), heat emitter (3) are pasted on heat conduction gasket (2), heat sink (5) and piezoelectricity nanometer displacement device (6) fixed connection, photovoltaic cell (4) are pasted on heat sink (5), the clearance that has the nanometer magnitude of an order of a meter between heat emitter (3) and photovoltaic cell (4), the size in vacuum clearance passes through piezoelectricity nanometer displacement device (6) control.
2. The near-field radiative heat photovoltaic power generation device of the black phosphorus/sodium bromide stack based on the waste heat of the diesel engine flue gas as claimed in claim 1, wherein the heat emitter (3) is formed by a multilayer black phosphorus/sodium bromide stack structure, wherein the thickness of the sodium bromide in the single-layer black phosphorus/sodium bromide is 10 nm-200 nm, and the thickness of the black phosphorus is 1.7 nm.
3. The near-field radiant heat photovoltaic power generation device based on the black phosphorus/sodium bromide stack and the waste heat of the diesel engine flue gas as claimed in claim 1, wherein the heat emitter (3) is formed by a 30-100-layer black phosphorus/sodium bromide stack structure.
4. The near-field radiative thermophotovoltaic device of the black phosphorus/sodium bromide stack based on the residual heat of the diesel engine flue gas of claim 1, wherein the thermal emitter (3) is obtained by periodic deposition of black phosphorus and sodium bromide by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
5. The near-field radiant thermal photovoltaic power generation device based on the black phosphorus/sodium bromide stack and the waste heat of the diesel engine flue gas as claimed in claim 1, wherein the photovoltaic cell (4) is made of a narrow-band semiconductor material, and the narrow-band semiconductor material is specifically one of mercury cadmium telluride, indium antimonide and indium arsenide.
6. The near-field radiant heat photovoltaic power generation device based on the black phosphorus/sodium bromide stack and the waste heat of the diesel engine flue gas as claimed in claim 1, wherein a metal electrode is welded on the photovoltaic cell (4), the metal electrode is silver, tin, copper or gold, and the metal electrode is in ohmic contact with the photovoltaic cell (4).
7. The near-field radiant heat photovoltaic power generation device with the black phosphorus/sodium bromide stack based on the waste heat of the diesel engine flue gas as claimed in claim 1, wherein the photovoltaic cell (4) provides a forward voltage through a metal electrode thereon, and the voltage is 0-0.15V.
8. The near-field radiant heat photovoltaic power generation device with the black phosphorus/sodium bromide stack based on the waste heat of the diesel engine flue gas as claimed in claim 1, wherein the thickness of the photovoltaic cell (4) is 10 μm-1 cm.
9. The near-field radiative thermophotovoltaic power generation device based on the waste heat of the diesel engine flue gas and the black phosphorus/sodium bromide stack according to claim 1, wherein a nano-scale vacuum gap is arranged between the heat emitter (3) and the photovoltaic cell (4) and has a distance of 10nm to 100 nm.
10. The near-field radiative thermal photovoltaic power generation device of the black phosphorus/sodium bromide stack based on the residual heat of the diesel engine flue gas as claimed in claim 1, wherein the temperature difference between the thermal emitter (3) and the photovoltaic cell (4) is controlled to be 300-600K.
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