CN112234155B - Quantum dot patterning method, manufacturing method of display panel and display panel - Google Patents
Quantum dot patterning method, manufacturing method of display panel and display panel Download PDFInfo
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- CN112234155B CN112234155B CN202011103490.XA CN202011103490A CN112234155B CN 112234155 B CN112234155 B CN 112234155B CN 202011103490 A CN202011103490 A CN 202011103490A CN 112234155 B CN112234155 B CN 112234155B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000000059 patterning Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 24
- 238000005253 cladding Methods 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 18
- 125000001165 hydrophobic group Chemical group 0.000 claims description 10
- 230000001476 alcoholic effect Effects 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229920002873 Polyethylenimine Polymers 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 3
- 229920001610 polycaprolactone Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- 239000008118 PEG 6000 Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- QNILTEGFHQSKFF-UHFFFAOYSA-N n-propan-2-ylprop-2-enamide Chemical compound CC(C)NC(=O)C=C QNILTEGFHQSKFF-UHFFFAOYSA-N 0.000 description 1
- 229920003213 poly(N-isopropyl acrylamide) Polymers 0.000 description 1
- 229920001440 poly(ε-caprolactone)-block-poly(ethylene glycol) Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention discloses a quantum dot patterning method, a manufacturing method of a display panel and the display panel, which are used for solving the problems that quantum dot residues exist in a non-patterned area, the quantum dot residues are difficult to remove, color mixing of a display device is difficult, and the performance of the device is poor. The quantum dot patterning method comprises the following steps: mixing quantum dots with a first substance to form a first coating substance in which the quantum dots are coated with the first substance; performing a first treatment process on the first cladding material of the patterned region so that the first material of the patterned region is dissolved and the quantum dots are exposed; performing a second treatment process on the patterned region to crosslink the quantum dots of the patterned region; performing a third treatment process on the patterned region to enable the quantum dots which are not crosslinked in the patterned region to be coated again, so as to form a second coating substance; washed by a solvent.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot patterning method, a manufacturing method of a display panel and the display panel.
Background
In the process of quantum dot exposure direct patterning, the non-patterning area has residues of quantum dots due to interaction of the quantum dots and a substrate, and the residues of the quantum dots are difficult to remove, so that color mixing of a final device is caused, and the performance of the device is affected.
Disclosure of Invention
The invention provides a quantum dot patterning method, a manufacturing method of a display panel and the display panel, which are used for solving the problems that quantum dot residues are remained in a non-patterned area, the quantum dot residues are difficult to remove, color mixing of a display device is difficult, and the performance of the device is poor.
The embodiment of the invention provides a quantum dot patterning method, which comprises the following steps:
Mixing quantum dots with a first substance to form a first coating substance in which the quantum dots are coated with the first substance;
forming the first cladding material on a substrate base plate;
performing a first treatment process on the first cladding material of the patterned region so that the first material of the patterned region is dissolved and the quantum dots are exposed;
Performing a second treatment process on the patterned region to crosslink the quantum dots of the patterned region;
performing a third treatment process on the patterned region to enable the quantum dots which are not crosslinked in the patterned region to be coated again, so as to form a second coating substance;
The first coating material of the non-patterned region and the second coating material of the patterned region being recoated are removed by solvent cleaning.
In one possible embodiment, the performing a first treatment process on the first cladding material of the patterned region includes:
And irradiating the first cladding material of the patterned area by laser at the shielding of the mask plate.
In one possible embodiment, the performing a second treatment process on the patterned region includes:
and under the shielding of the mask plate, irradiating the quantum dots in the patterned area by ultraviolet light.
In one possible embodiment, the performing a third treatment process on the patterned region includes:
And placing the substrate on a cold plate to cool the substrate.
In one possible embodiment, the material of the first substance is a temperature-sensitive material.
In one possible embodiment, the temperature sensitive material comprises one or a combination of the following groups:
a polyethyleneimine group;
An ester group;
an alcoholic hydroxyl group.
In one possible embodiment, the temperature-sensitive material further comprises: hydrophilic groups and hydrophobic groups.
In one possible embodiment, the quantum dot includes: a quantum dot body, a crosslinking group connected with the quantum dot body;
further comprises: hydrophilic groups or hydrophobic groups.
The embodiment of the invention also provides a manufacturing method of the display panel, which comprises the quantum dot patterning method provided by the embodiment of the invention.
The embodiment of the invention also provides a display panel which comprises the quantum dot film layer manufactured by the quantum dot patterning method provided by the embodiment of the invention.
The embodiment of the invention has the following beneficial effects: in the embodiment of the invention, the first coating material of the quantum dots coated by the first material is formed on the substrate, and the first treatment process is carried out on the patterned area where the quantum dots are required to be reserved, so that the first material of the patterned area is dissolved, the quantum dots are exposed, the quantum dots in the non-patterned area are still in a state coated by the first material, and then the second treatment process is carried out on the patterned area, so that the exposed quantum dots are crosslinked with each other, and then the third treatment process is carried out on the patterned area, so that the quantum dots which are not crosslinked in the patterned area are recoated, and then the first coating material of the non-patterned area is removed, and the quantum dots which are not crosslinked in the patterned area are also removed.
Drawings
FIG. 1 is a flow chart of a quantum dot patterning method according to an embodiment of the present invention;
Fig. 2 is a flowchart of a specific quantum dot patterning method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed description of known functions and known components.
Referring to fig. 1, an embodiment of the present invention provides a quantum dot patterning method, including:
Step S100, mixing the quantum dots with a first substance to form a first coating substance for coating the quantum dots with the first substance; specifically, the first substance may be a temperature-sensitive material, which may polymerize at a certain temperature, and dissolve after changing the temperature, so as to release and recoating the coated quantum dots in the subsequent manufacturing process; specifically, the temperature-sensitive material may include one or a combination of the following: a polyethyleneimine group; an ester group; an alcoholic hydroxyl group; specifically, the temperature-sensitive material can be polycaprolactone-polyethylene glycol-polycaprolactone (PCL-PEG 6000 -PCL), N-isopropyl acrylamide (PNIPAAm) or cyclodextrin (PCL 1000-PEG6000-PCL1000 -beta-CD); specifically, the temperature-sensitive material can also comprise a hydrophilic group and a hydrophobic group, and because the quantum dot generally contains the hydrophobic group, the temperature-sensitive material also contains the hydrophobic group, and according to the similar principle of miscibility, the quantum dot is more easily coated by the temperature-sensitive material, and is coated in the ball because the polarity of the quantum dot is the same as that of the hydrophobic group of the temperature-sensitive material after being coated into the ball, and the temperature-sensitive material also comprises a hydrophilic group which can be eluted by a solvent during subsequent cleaning, and specifically, the hydrophilic group can be an alcoholic hydroxyl group; specifically, the coating rate of the selected temperature-sensitive material on the quantum dots is more than 70%;
step S200, forming a first coating substance on a substrate base plate; specifically, the first coating substance may be spin-coated on the substrate by spin-coating;
Step S300, performing a first treatment process on the first cladding material of the patterned region to dissolve the first material of the patterned region and expose the quantum dots; specifically, the first cladding material of the patterned area is irradiated by laser under the shielding of the mask plate; the patterned region may be heated by laser irradiation, specifically, to 20 degrees to 150 degrees, specifically, to 40 degrees to 50 degrees; specifically, the patterned region may be a region in which quantum dots need to be reserved later, and the unpatterned region may be a region in which quantum dots need to be removed later;
Step S400, performing a second treatment process on the patterned region to crosslink quantum dots of the patterned region; specifically, under the shielding of a mask plate, quantum dots in a patterning area are irradiated by ultraviolet light; specifically, the mask plate used in the step S400 may be identical to the mask plate used in the step S300, that is, the heating of the patterned region and the cross-linking of the quantum dots in the patterned region may be realized without removing the mask plate, so as to simplify the preparation process of quantum dot patterning; specifically, the quantum dot may include a quantum dot body, and a crosslinking group connected to the quantum dot body, where the crosslinking group may crosslink when irradiated with ultraviolet light, so that the quantum dots in the area irradiated with ultraviolet light are crosslinked with each other to form a whole; specifically, the quantum dot may further include a hydrophilic group or a hydrophobic group, and specifically, may include a hydrophobic group;
Step S500, performing a third treatment process on the patterned region to enable the quantum dots which are not crosslinked in the patterned region to be coated again, so as to form a second coating substance; specifically, the substrate may be placed on a cold plate to cool the substrate, specifically, the substrate may be cooled to 10-100 ℃, specifically, the substrate may be cooled to 20-30 ℃; through the step S500, the quantum dots which are not crosslinked in the patterned area can be recoated, for example, the quantum dots which are not crosslinked may be present at the edge position of the patterned area, and the quantum dots may be mixed with other color quantum dots in the adjacent area formed subsequently to affect the device performance, and through the step S500, the quantum dots which are not crosslinked at the position can be removed;
Step S600, removing the first coating material of the non-patterned region and the second coating material of the patterned region by solvent cleaning.
In the embodiment of the invention, the first coating material of the quantum dots coated by the first material is formed on the substrate, and the first treatment process is carried out on the patterned area where the quantum dots are required to be reserved, so that the first material of the patterned area is dissolved, the quantum dots are exposed, the quantum dots in the non-patterned area are still in a state coated by the first material, and then the second treatment process is carried out on the patterned area, so that the exposed quantum dots are crosslinked with each other, and then the third treatment process is carried out on the patterned area, so that the quantum dots which are not crosslinked in the patterned area are recoated, and then the first coating material of the non-patterned area is removed, and the quantum dots which are not crosslinked in the patterned area are also removed.
The above steps S100 to S600 may be a process of patterning the quantum dot film layer for emitting one light color, if a plurality of quantum dots emitting different light colors are required, the steps S100 to S600 may be repeated a plurality of times, for example, a quantum dot light emitting layer having a red light emitting portion for emitting red light, a green light emitting portion for emitting green light, and a blue light emitting portion for emitting blue light needs to be fabricated, and when the red light emitting portion is fabricated, the steps S100 to S600 may be implemented, and when the green light emitting portion is fabricated, the steps S100 to S600 may be performed again, and when the blue light emitting portion is fabricated, the steps S100 to S600 may be performed again, and of course, the patterning regions corresponding to the different light emitting portions may be different.
In order to more clearly understand the patterning method of the quantum dot film layer provided by the embodiment of the present invention, the following is further described with reference to fig. 2:
step one, coating quantum dots by a temperature-sensitive material at a certain temperature to form a first coating substance, wherein the first coating substance is shown in the steps (a) - (b) in fig. 2;
step two, spin-coating the coated quantum dots on a substrate;
step three, adding laser (LASER HEAT) on the patterned Mask plate (Mask), heating a specific part (patterned area) to a certain temperature (20-150 ℃) as shown in (c) of fig. 2, dissolving the coating material, and exposing the coated quantum dots;
Step four, subsequently, using the same Mask plate (Mask), and using UV exposure to crosslink the exposed quantum dots, as shown in (d) of FIG. 2;
step five, slowly cooling the substrate to a certain temperature (10-100 ℃) so as to enable the dissolved temperature-sensitive material to be reaggregated, wherein the quantum dots which are not crosslinked are coated again in the process as shown in (e) of fig. 2, so that a second coating substance is formed;
And step six, finally, using a solvent to wash away the temperature-sensitive material coating the quantum dots, namely, removing the first coating substance of the non-patterned region and the second coating substance of the re-coated patterned region, as shown in (f) of fig. 2, wherein the quantum dots are coated in the temperature-sensitive material, and the groups outside the temperature-sensitive material are mainly alcoholic hydroxyl groups, so that the quantum dots are easier to wash away integrally, and the method for directly exposing the quantum dots avoids the use of the solvent which is compatible with the quantum dot ligand.
And step seven, repeating the steps to manufacture the quantum dots with the second color, wherein the quantum dots are coated in the temperature-sensitive material, so that the direct contact of the two quantum dots is avoided when the second quantum dots are manufactured, and the residual cross color is greatly reduced.
Based on the same inventive concept, the embodiment of the invention also provides a manufacturing method of the display panel, including the quantum dot patterning method provided by the embodiment of the invention.
Based on the same inventive concept, the embodiment of the invention also provides a display panel, which comprises a quantum dot film layer manufactured by the quantum dot patterning method provided by the embodiment of the invention.
The embodiment of the invention has the following beneficial effects: in the embodiment of the invention, the first coating material of the quantum dots coated by the first material is formed on the substrate, and the first treatment process is carried out on the patterned area where the quantum dots are required to be reserved, so that the first material of the patterned area is dissolved, the quantum dots are exposed, the quantum dots in the non-patterned area are still in a state coated by the first material, and then the second treatment process is carried out on the patterned area, so that the exposed quantum dots are crosslinked with each other, and then the third treatment process is carried out on the patterned area, so that the quantum dots which are not crosslinked in the patterned area are recoated, and then the first coating material of the non-patterned area is removed, and the quantum dots which are not crosslinked in the patterned area are also removed.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (8)
1. A method of quantum dot patterning, comprising:
mixing quantum dots with a temperature-sensitive material comprising a hydrophilic group and a hydrophobic group to form a first coating substance for coating the quantum dots with the temperature-sensitive material;
forming the first cladding material on a substrate base plate;
Performing a first treatment process on the first coating substance of the patterned region to dissolve the temperature-sensitive material of the patterned region, wherein the quantum dots are exposed;
Performing a second treatment process on the patterned region to crosslink the quantum dots of the patterned region;
performing a third treatment process on the patterned region to enable the quantum dots which are not crosslinked in the patterned region to be coated again, so as to form a second coating substance;
The first coating material of the non-patterned region and the second coating material of the patterned region being recoated are removed by solvent cleaning.
2. The quantum dot patterning method of claim 1, wherein said subjecting the first cladding material of the patterned region to a first treatment process comprises:
And irradiating the first cladding material of the patterned region by laser under the shielding of a mask plate.
3. The quantum dot patterning method of claim 2, wherein said performing a second process on said patterned region comprises:
and under the shielding of the mask plate, irradiating the quantum dots in the patterned area by ultraviolet light.
4. The quantum dot patterning method of claim 3, wherein the performing a third process on the patterned region comprises:
And placing the substrate on a cold plate to cool the substrate.
5. The quantum dot patterning method of claim 1, wherein the temperature sensitive material comprises one or a combination of the following groups:
a polyethyleneimine group;
An ester group;
an alcoholic hydroxyl group.
6. The quantum dot patterning method of claim 1, wherein the quantum dot comprises: a quantum dot body, a crosslinking group connected with the quantum dot body;
further comprises: hydrophilic groups or hydrophobic groups.
7. A method for manufacturing a display panel, comprising the quantum dot patterning method according to any one of claims 1 to 6.
8. A display panel comprising a quantum dot film layer fabricated by the quantum dot patterning method of any one of claims 1-6.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597813A (en) * | 2016-12-22 | 2017-04-26 | 深圳市华星光电技术有限公司 | Method for patterning quantum dot light-emitting layer, quantum dot color film and display device |
| CN109378395A (en) * | 2018-10-18 | 2019-02-22 | 京东方科技集团股份有限公司 | The preparation method and display device of nanoparticle, display base plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597813A (en) * | 2016-12-22 | 2017-04-26 | 深圳市华星光电技术有限公司 | Method for patterning quantum dot light-emitting layer, quantum dot color film and display device |
| CN109378395A (en) * | 2018-10-18 | 2019-02-22 | 京东方科技集团股份有限公司 | The preparation method and display device of nanoparticle, display base plate |
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