CN112234125A - GaN-based LED epitaxial structure with high antistatic capacity and growth method - Google Patents
GaN-based LED epitaxial structure with high antistatic capacity and growth method Download PDFInfo
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- CN112234125A CN112234125A CN202010958504.XA CN202010958504A CN112234125A CN 112234125 A CN112234125 A CN 112234125A CN 202010958504 A CN202010958504 A CN 202010958504A CN 112234125 A CN112234125 A CN 112234125A
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The invention discloses a GaN-based LED epitaxial structure with high antistatic capability and a growth method thereof. In the structure, the antistatic layer is doped with Si in the growth process, a large number of V-shaped pits are opened, and the V-shaped pits can be used as a leakage channel to effectively guide impulse current to be conducted from the V-shaped pits when reverse static voltage is applied, so that the impulse current is uniformly distributed, the possibility of breakdown of a chip is greatly reduced, and the antistatic capability of the GaN-based LED is effectively improved.
Description
Technical Field
The invention relates to a semiconductor light-emitting device, in particular to a GaN-based LED epitaxial structure with high antistatic capacity and a growth method.
Background
In recent years, the development of GaN-based Light Emitting Diodes (LEDs) has made significant progress. The improvement of the electro-optic conversion efficiency and the reduction of the manufacturing cost lead the LED with the remarkable characteristics of high efficiency, environmental protection, long service life and the like to be widely used in a plurality of fields such as display screens, indicator lamps, landscape lighting, outdoor lighting, automobile lamps and the like. However, GaN is prone to cause a large number of lattice defects during the growth process, and when the number of lattice defects is too large, tunneling breakdown of the p-n junction occurs, so that the antistatic capability of the device is greatly reduced, and the device is prone to failure, which seriously restricts the wide application of the LED, especially further use in extreme environments. The conventional method for improving the antistatic ability is to insert an AlGaN layer into an n layer or to use δ -silicon doping, etc., but the improvement is limited.
Disclosure of Invention
The invention aims to provide a GaN-based LED epitaxial structure with high antistatic capability, which is characterized in that a stress adjusting layer is grown between an n-type layer and a multi-quantum well layer, the stress adjusting layer comprises two layers, namely a doped antistatic layer and a dislocation barrier layer, and when an LED is reversely biased, a chip of the structure guides impact current to be conducted from a V-shaped pit, so that the chip can bear ultrahigh ten-thousand volts of static electricity.
The second purpose of the invention is to provide a growth method of a GaN-based LED epitaxial structure with high antistatic capacity.
The first object of the present invention is achieved by:
the GaN-based LED epitaxial structure with high antistatic capability comprises a substrate, and a buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially formed on the substrate; is characterized in that: and a stress adjusting layer is grown between the n-type layer and the multi-quantum well layer, and comprises an Si-doped antistatic layer and a dislocation barrier layer.
Wherein the antistatic layer is composed of GaN, and the concentration of doped Si is 1 × 1017-5×1017cm-2The thickness is 100-200 nm.
A large number of V-shaped pits are distributed in the antistatic layer.
Dislocation barrier layer made of InxGa1-xN well and InyGa1-yThe periodic structure of N barrier is composed, the period number is k, InxGa1-xThe forbidden band width of the N well is less than InyGa1-yA forbidden bandwidth of N base, wherein: inxGa1-xIn the N trap: x is more than or equal to 0 and less than or equal to 1; inyGa1-yIn the N base: y is more than or equal to 0 and less than or equal to 1, y<x; number of cycles 0<k≤50。
Multiple quantum well layer formed of InmGa1-mN well and AlnInqGa1-n-qThe periodic structure of N barrier is composed, the period number is t, InmGa1- mThe forbidden band width of the N well is less than that of AlnInqGa1-n-qA forbidden bandwidth of N base, wherein: inmGa1-mIn the N trap: m is more than or equal to 0 and less than or equal to 1; al (Al)nInqGa1-n-qIn the N base: n is more than or equal to 0 and less than or equal to 1, q is more than or equal to 0 and less than or equal to 1, and n + q is more than or equal to 0 and less than or equal to 1; t is more than or equal to 1 and less than or equal to 15.
The p-type layer is made of p-AliInjGa1-i-jN, wherein: i is more than or equal to 0 and less than or equal to 1, j is more than or equal to 0 and less than or equal to 1, and i + j is more than or equal to 0 and less than or equal to 1.
The substrate is Al2O3SiC, Si or GaN.
The second object of the invention is achieved by:
the growth method of the GaN-based LED epitaxial structure with high antistatic capacity comprises the following steps:
A. loading the substrate into an MOCVD reaction chamber;
B. growing an AlN or GaN buffer layer;
C. growing an n-type layer;
D. growing a stress adjusting layer: the stress adjusting layer consists of an antistatic layer and a dislocation blocking layer which are doped with Si in sequence from bottom to top; antistatic layer at low temperature N2Growing under carrier gas, wherein the growth temperature is between 850 ℃ and 1000 ℃, and the thickness is between 100nm and 200 nm;
E. growing a multi-quantum well layer;
F. growing a p-type layer to obtain an epitaxial wafer;
G. and manufacturing the epitaxial wafer into a chip, and packaging to obtain the final GaN-based LED with high antistatic capability.
The invention can realize the purpose of improving the reliability of the LED by adding the antistatic layer and the dislocation barrier layer which are doped with Si between the n-type layer and the multiple quantum wells, and the principle is as follows:
low temperature N2Growing n-type doped GaN under the condition of carrier gas, opening a large number of V-shaped pits along dislocation lines In the process of growing the layer, and then growing InxGa1-xN/InyGa1-yThe N superlattice dislocation barrier layer filters dislocation, and the crystal quality of a subsequent quantum well is improved. When conducting in the forward direction, under a very small current, electrons in the antistatic layer doped on the side wall of the V-shaped pit directly recombine with holes in the p layer to emit light, which shows that a leakage channel is formed. After reverse static voltage is added, because the V-shaped pits are leakage channels, compared with a platform, impact current is easier to shunt and lead away from the V-shaped pits, and therefore the antistatic performance of the device can be greatly improved.
Compared with other methods for improving the antistatic performance of the GaN-based LED, the method provided by the invention integrates the process for improving the reliability of the device into the growth process of the material, does not need additional working procedures, does not increase the manufacturing cost of the device, and does not influence the qualification rate of chip manufacturing.
Compared with a classical LED structure, the invention can keep the size of the V-shaped pit consistent, and the crystal quality of the quantum well and the incorporation of In and the like are not influenced, so that the injection of carriers In the multiple quantum wells on the platform is not influenced when the LED is In forward conduction operation, and the light intensity of the LED is not influenced.
The invention can effectively control the antistatic capability of the LED by changing the thickness of the antistatic layer.
Drawings
FIG. 1 is a schematic diagram of a typical structure of a GaN-based multiple quantum well LED;
fig. 2 is a schematic structural diagram of the GaN-based mqw LED of the present invention.
Detailed Description
The invention is further illustrated by the following examples in connection with the accompanying drawings.
As shown in fig. 2, the experiment was carried out using a Thomas Swan tightly coupled shower (CCS) MOCVD system for epitaxial growth. The substrate is Si substrate, the metal organic source comprises trimethyl gallium (TMGa), triethyl gallium (TEGa), trimethyl aluminum (TMAl) and trimethyl indium (TMIn), and the N source is ammonia (NH)3) The carrier gas is N2And H2The p-type dopant and the n-type dopant are respectively Cp2Mg and SiH4。
The growth method of the GaN-based LED epitaxial structure with high antistatic capacity comprises the following steps:
A. clean (111) plane silicon substrate 101 was loaded into the MOCVD reaction chamber at H2Baking for 15 minutes at 1200 ℃ and 100Torr in the atmosphere;
B. cooling to 950 ℃, introducing TMAl into the MOCVD reaction chamber under the pressure of 100Torr for 60 s;
C. heating to 1200 ℃, introducing TMAl and NH under the pressure of 100Torr3Growing an AlN buffer layer 201 with the thickness of about 120 nm;
D. an n-type GaN layer 301 of about 3 μm doped with Si at a concentration of 5X 10 was grown at a temperature of 1150 ℃ and a pressure of 200Torr18；
E. Cooling to 950 ℃, the pressure is 200Torr, in N2Growing an LT-GaN antistatic layer 401 with the concentration of Si being 1 × 10 and about 100nm in the atmosphere17；
F. The dislocation barrier layer 402 is an InGaN/GaN superlattice In whichxGa1-xN (x = 0.07) and GaN thickness around 50A and 20A, respectively, with a periodicity of 15; the growth temperature is 930 ℃, and the pressure is 200 Torr;
G. multiple quantityThe sub-well layer 501 is an InGaN/GaN quantum well In whichxGa1-xN (x = 0.25) and GaN thicknesses of around 28A and 100A, respectively, with a periodicity of 10;
H. growing p-type Al of about 20nm under the conditions of 1050 ℃ and 75TorrxGa1-xN (x = 0.15) layers; growing a p-type GaN layer with the thickness of about 200nm under the condition that the pressure is increased to 200 Torr; and then growing a highly doped p-type GaN layer of about 20 nm.
The p-type layer 601 comprises p-type AlxGa1-xAn N layer, a p-type GaN layer and a highly doped p-type GaN layer.
In the step E, the antistatic layer 401 generates a V-shaped pit along the dislocation line 701 in the growth process, wherein the thickness of the sidewall 802 is much smaller than that of the platform 801, electrons and holes on the p layer of the V-shaped pit directly recombine to emit light when the doped antistatic layer is under a small current, and this position is easier to conduct than other regions, and when a reverse static voltage is applied, an impact current is guided by the V-shaped pit to shunt, thereby improving the reliability of the LED 100.
Claims (8)
1. The GaN-based LED epitaxial structure with high antistatic capability comprises a substrate, and a buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially formed on the substrate; the method is characterized in that: and a stress adjusting layer is grown between the n-type layer and the multi-quantum well layer, and comprises an Si-doped antistatic layer and a dislocation barrier layer.
2. The GaN-based LED epitaxial structure with high antistatic capability of claim 1, wherein: the antistatic layer is made of GaN, and the concentration of doped Si is 1 × 1017-5×1017cm-2The thickness is 100-200 nm.
3. The GaN-based LED epitaxial structure with high antistatic ability according to claim 1 or 2, wherein: a large number of V-shaped pits are distributed in the antistatic layer.
4. The GaN-based LED epitaxial structure with high antistatic ability according to claim 1,the method is characterized in that: dislocation barrier layer made of InxGa1-xN well and InyGa1-yThe periodic structure of N barrier is composed, the period number is k, InxGa1-xThe forbidden band width of the N well is less than InyGa1-yA forbidden bandwidth of N base, wherein: inxGa1-xIn the N trap: x is more than or equal to 0 and less than or equal to 1; inyGa1-yIn the N base: y is more than or equal to 0 and less than or equal to 1, y<x; number of cycles 0<k≤50。
5. The GaN-based LED epitaxial structure with high antistatic capability of claim 1, wherein: multiple quantum well layer formed of InmGa1-mN well and AlnInqGa1-n-qThe periodic structure of N barrier is composed, the period number is t, InmGa1-mThe forbidden band width of the N well is less than that of AlnInqGa1-n-qA forbidden bandwidth of N base, wherein: inmGa1-mIn the N trap: m is more than or equal to 0 and less than or equal to 1; al (Al)nInqGa1-n-qIn the N base: n is more than or equal to 0 and less than or equal to 1, q is more than or equal to 0 and less than or equal to 1, and n + q is more than or equal to 0 and less than or equal to 1; t is more than or equal to 1 and less than or equal to 15.
6. The GaN-based LED epitaxial structure with high antistatic capability of claim 1, wherein: the p-type layer is made of p-AliInjGa1-i-jN, wherein: i is more than or equal to 0 and less than or equal to 1, j is more than or equal to 0 and less than or equal to 1, and i + j is more than or equal to 0 and less than or equal to 1.
7. The GaN-based LED epitaxial structure with high antistatic capability of claim 1, wherein: the substrate is Al2O3SiC, Si or GaN.
8. The growth method of the GaN-based LED epitaxial structure with high antistatic capability is characterized in that: the method comprises the following steps:
A. loading the substrate into an MOCVD reaction chamber;
B. growing an AlN or GaN buffer layer;
C. growing an n-type layer;
D. growing a stress adjusting layer: stress adjusting layer from bottom to topAn antistatic layer and a dislocation blocking layer which are doped with Si upwards in sequence; antistatic layer at low temperature N2Growing under carrier gas, wherein the growth temperature is between 850 ℃ and 1000 ℃, and the thickness is between 100nm and 200 nm;
E. growing a multi-quantum well layer;
F. growing a p-type layer to obtain an epitaxial wafer;
G. and manufacturing the epitaxial wafer into a chip, and packaging to obtain the final GaN-based LED with high antistatic capability.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594579A (en) * | 2013-11-06 | 2014-02-19 | 南昌黄绿照明有限公司 | Epitaxial structure of nitride light emitting diode |
| US20150115223A1 (en) * | 2013-10-28 | 2015-04-30 | Seoul Viosys Co., Ltd. | Semiconductor device and method of manufacturing the same |
| WO2016108423A1 (en) * | 2014-12-30 | 2016-07-07 | Seoul Viosys Co., Ltd. | Light emitting device |
| WO2018012585A1 (en) * | 2016-07-13 | 2018-01-18 | シャープ株式会社 | Light emitting diode and light emitting device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150115223A1 (en) * | 2013-10-28 | 2015-04-30 | Seoul Viosys Co., Ltd. | Semiconductor device and method of manufacturing the same |
| CN103594579A (en) * | 2013-11-06 | 2014-02-19 | 南昌黄绿照明有限公司 | Epitaxial structure of nitride light emitting diode |
| WO2016108423A1 (en) * | 2014-12-30 | 2016-07-07 | Seoul Viosys Co., Ltd. | Light emitting device |
| WO2018012585A1 (en) * | 2016-07-13 | 2018-01-18 | シャープ株式会社 | Light emitting diode and light emitting device |
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