CN112232013A - OPC treatment method for improving coverage rate between metal layer and through hole layer - Google Patents
OPC treatment method for improving coverage rate between metal layer and through hole layer Download PDFInfo
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Abstract
The invention provides an OPC treatment method for improving the coverage rate between a metal layer and a through hole layer, which comprises the following steps: inputting an original layout of a metal layer, and performing line width amplification processing on the original layout to obtain a first layout; carrying out de-bulging treatment and curvilinearization treatment on the first layout to obtain a second layout; calculating the coverage rate between the second layout and the through hole layer, and dividing the second layout into a plurality of regions according to the coverage rate; selecting convex angles with the distance between the first layout and the through hole layer being a set value and corresponding to each region of the second layout, and performing edge expansion processing with different amplitudes on the edges of the convex angles; combining the first layout and the first layout after the edge expanding treatment to obtain a third layout; and if the coverage rate between the third layout and the through hole layer reaches the standard, outputting the third layout. The third layout improves the coverage rate between the metal layer and the through hole layer, and meanwhile, the process window of the space between the metal lines cannot be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an OPC (optical proximity correction) processing method for improving the coverage rate between a metal layer and a through hole layer.
Background
The connection of the back-end metal layer and the through hole layer in the integrated circuit manufacturing process plays a crucial role in device performance, if the coverage rate of the metal layer and the through hole layer does not reach the standard, the conduction performance between different metal layers is poor, even the conduction performance is invalid, and finally the yield of products is reduced.
However, due to the existence of the Optical Proximity effect, there is a certain difference between the circuit layout design and the patterns actually produced on the wafer, and in the background of the rising of the technology nodes, the introduction of the Optical Proximity Correction (OPC) technology can compensate for this. The coverage rate of the convex angle position of the line end and the through hole layer is reduced due to the influence of the fillet effect in the metal layer layout design, the traditional correction method is to carry out uniform edge expansion on the edge where the convex angle is located, but the environments around the convex angle are different, lines at some places can be dense, and therefore the uniform edge expansion can reduce the process window of the Space (Space) between partial metal lines.
Disclosure of Invention
The invention aims to provide an OPC treatment method for improving the coverage rate between a metal layer and a through hole layer, which can improve the coverage rate between the metal layer and the through hole layer and simultaneously can not reduce a process window of a space between metal lines.
In order to achieve the above object, the present invention provides an OPC processing method for improving coverage between a metal layer and a via layer, comprising:
s11: inputting an original layout of a metal layer, and performing line width amplification processing on the original layout to obtain a first layout;
s12: carrying out de-bulging treatment and curvilinearization treatment on the first layout to obtain a second layout;
s13: calculating the coverage rate between the second layout and the through hole layer, and dividing the second layout into a plurality of regions according to the coverage rate;
s14: selecting convex angles with the distance between the first layout and the through hole layer being a set value and corresponding to each region of the second layout, and performing edge expansion processing with different amplitudes on the edges of the convex angles;
s15: combining the first layout and the first layout after the edge expanding treatment to obtain a third layout;
s16: and if the coverage rate between the third layout and the through hole layer reaches the standard, outputting the third layout.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, if the coverage between the third layout and the via layer does not meet the standard, the steps S13, S14, S15, and S16 are repeated until the coverage meets the standard.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, in S16, the method for determining that the coverage meets the standard is that the coverage is at least 95%.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, performing de-bumping processing and profiling processing on the first layout includes:
and carrying out de-bulging treatment on the first layout, and then carrying out curvilinearization treatment.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, performing a de-protrusion process on the first layout includes:
and convex shapes are arranged on the edges of the lines of the removed first layout, so that the edges of the lines are straight lines.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, the method for performing the curve processing includes:
the control points are arranged on the lines subjected to the de-bulging treatment, and the connecting lines between the control points are pulled to enable the right-angle lines of the first layout to be changed into curve lines.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, the plurality of regions include: a first region, a second region, and a third region; the coverage rate between the first region and the via layer is less than 80%; the coverage rate between the second region and the through hole layer is 80% -90%; and the coverage rate between the third region and the through hole layer is 90-95%.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, a convex angle, of which the distance between the first layout and the via layer is a set value, corresponding to each region of the second layout is selected, and the method of performing edge expansion processing with different amplitudes on the edge of each convex angle includes:
selecting a convex angle with a distance between the first layout and the through hole layer corresponding to the first region as a set value, and carrying out edge expansion processing of a first amplitude on the edge of the convex angle; selecting a convex angle with a set value of the distance between the first layout and the through hole layer corresponding to the second region, and performing edge expansion processing of a second amplitude on the edge of the convex angle; and selecting a convex angle with a distance between the first layout and the through hole layer corresponding to the third area as a set value, and performing edge expansion processing of a third amplitude on the edge of the convex angle.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, the first amplitude is 15nm, the second amplitude is 10nm, and the third amplitude is 5 nm.
Optionally, in the OPC processing method for improving the coverage between the metal layer and the via layer, the set value is a value of one third of the line width of the original layout.
In the OPC processing method for improving the coverage rate between the metal layer and the through hole layer, the original layout of the metal layer is processed to obtain a first layout and a second layout, the second layout is divided into a plurality of areas according to the coverage rate of the second layout and the through hole layer, the edges of convex angles, the distance between the first layout and the through hole layer, which correspond to each area, reaches a set value are respectively subjected to edge expansion with different amplitudes, the first layout and the first layout after edge expansion are fused to form a third layout, and the third layout is output, so that the coverage rate between the metal layer and the through hole layer is improved by the third layout, and meanwhile, a process window of the distance between metal wires cannot be reduced.
Drawings
FIG. 1 is a flow chart of a method of OPC processing to improve coverage between metal and via layers in an embodiment of the present invention;
fig. 2 to fig. 8 are layout diagrams of an OPC processing method for improving coverage between a metal layer and a via layer according to an embodiment of the present invention;
in the figure: 110-first layout, 110A-first layout after de-bulging processing, 111-bulge, 112-control point, 120-second layout, 121-first region, 122-second region, 123-third region, edge of 121A-convex angle, 130-through hole layer and 140-third layout.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the following, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances. Similarly, if the method described herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method.
The communication between metal level and the metal level is by the via layer, if the coverage between via layer and the metal level, the coverage refers to the ratio of the coincidence area between via layer and metal level and via layer again. Therefore, if the coverage is too low, it proves that the overlapping area between the via layer and the metal layer is too low, which results in the connection performance between the metal layer and the metal layer being reduced, even the connection fails, and finally the yield of the product is reduced. The reason why the coverage rate is underground may be that, although the coverage rate on the original layout may reach the standard, when the metal wire is transferred onto the wafer, the moving direction of the transferred metal wire is changed due to the optical proximity effect, so that the coverage rate is changed. Therefore, the invention carries out OPC treatment before the transfer so as to lead the coverage rate after the transfer to reach the standard. From many experiments or experiences, most of the places where the coverage after transfer is not up to standard are the metal wire salient angle (corner) positions of the metal layer. In the prior art, the layout of the metal layer is subjected to uniform edge expansion, so that the coverage rate of the via layer and the metal layer is increased, however, the uniform edge expansion may cause that the distance between metal lines in some places is too small, and the subsequent process is influenced.
Referring to fig. 1, the present invention provides an OPC processing method for improving coverage between a metal layer and a via layer, comprising:
s11: inputting an original layout of a metal layer, and performing line width amplification processing on the original layout to obtain a first layout;
s12: carrying out de-bulging treatment and curvilinearization treatment on the first layout to obtain a second layout;
s13: calculating the coverage rate between the second layout and the through hole layer, and dividing the second layout into a plurality of regions according to the coverage rate;
s14: selecting convex angles with the distance between the first layout and the through hole layer being a set value and corresponding to each region of the second layout, and performing edge expansion processing with different amplitudes on the edges of the convex angles;
s15: combining the first layout and the first layout after the edge expanding treatment to obtain a third layout;
s16: and if the coverage rate between the third layout and the through hole layer reaches the standard, outputting the third layout.
Specifically, an original layout (not shown in the figure) of the metal layer is input, and the original layout is subjected to line width amplification to obtain a first layout 110, as shown in fig. 2. The original layout is formed by a plurality of layout patterns formed by a plurality of lines, and the lines have line widths, and in step S11, the line width amplification processing is performed on the original layout, which is the prior art and is not described herein again.
Next, the first layout 110 is subjected to a de-bulging 111 treatment, specifically, the shape of the bulge 111 on the edge of the line of the first layout 110 is removed within a certain range, so that the edge of the line is a straight line, and fig. 2 and fig. 3 are compared with each other, and fig. 3 is the first layout 110A after the de-bulging treatment. For example, there are some protrusions in the first version 110 that are particularly small in size, typically 2nm to 3nm in size, which can have an effect during OPC correction.
Next, referring to fig. 4, a curve processing is performed on the first layout 110A after the de-protrusion processing, specifically, the control points 112 are arranged on the lines after the de-protrusion processing, and the connection lines between the control points 112 are pulled to change the right-angle lines of the first layout 110 into curve lines, so as to obtain a second layout 120, as shown in fig. 5, it can be seen that the lines of the second layout 120 have been subjected to the curve processing. The pitch of the control points 112 is usually set to 50nm-80nm, and it is also the prior art to draw a straight line into a curved line, which is not described herein.
Next, referring to fig. 6, a via layer 130 is introduced into the second layout 120, and the coverage rates of the via layer 130 and the second layout 120 are calculated, that is, the ratio of the overlapping area between the via layer 130 and the second layout 120 to the via layer 130 is calculated, but because the via layer has a plurality of through holes, the coverage rates of the via layer and the second layout have a plurality of values, some coverage rates are larger, and some coverage rates are smaller, therefore, if the coverage rate does not reach the standard, the line width is uniformly amplified to increase the coverage rate, which may cause the distance between some lines to be too small, and the process window is affected. Therefore, the second layout is divided into a plurality of areas according to different coverage rates. Specifically, in the embodiment of the present invention, three regions are divided, that is, a first region 121, a second region 122, and a third region 123; the coverage between the first region 121 and the via layer is less than 80%; the coverage rate between the second region 122 and the via layer is 80% -90%; the coverage between the third region 123 and the via layer is 90% -95%. In other embodiments of the present invention, the coverage rate may be divided into more areas, and the coverage rate of each area may have other values.
Then, with reference to fig. 6, selecting a convex angle, the distance between which and the through hole layer in the first layout corresponding to each region of the second layout is a set value, and performing edge expansion processing with different amplitudes on the edge of each convex angle, that is, after the second layout is divided into three regions according to the coverage rate, in each region, calculating the distance between the first layout and the through hole layer, and if the nearest distance between the line edge of a certain convex angle of the first layout and the adjacent through hole layer reaches the set value, processing the edge of the convex angle. The set value may be one third of the line width of the original layout. For example, a convex angle with a set value of the distance between the first layout and the via layer corresponding to the first region 121 is selected, and edge expansion processing of a first amplitude is performed on the edge of the convex angle, wherein the first amplitude is 15 nm; selecting a convex angle with a set value of the distance between the first layout and the through hole layer corresponding to the second region 122, and performing edge expansion processing on the edge of the convex angle with a second amplitude of 10 nm; and selecting a convex angle with the distance between the first layout and the through hole layer corresponding to the third area 123 as a set value, and performing edge expansion processing on the edge of the convex angle with a third amplitude of 5 nm. It can also be seen that the coverage of the first area 121 is less than the coverage of the second area 122 and less than the coverage of the third area 123, and therefore the first amplitude is greater than the second amplitude, which is greater than the third amplitude. Selecting the first region as an example, as shown in fig. 7, if the nearest distance from the side 121A of the convex corner in the first region 121 to the via layer 130 reaches a set value, the side 121A of the convex corner is subjected to an edge expansion process, and the expanded amplitude is 15nm, i.e., the distance is 15nm outward. The methods for expanding the edges of other regions, such as the second region and the third region, are similar to those of the first region, and are not described herein again.
Then, referring to fig. 8, combining the first layout and the plurality of first layouts after the edge expanding processing to obtain a third layout 140; and if the coverage rate between the third layout and the through hole layer reaches the standard, outputting a third layout, and 140. Preferably, the method for judging the coverage rate to reach the standard is that the coverage rate reaches at least 95 percent. In other embodiments of the present invention, the coverage up to reach may be set to other values.
Further, if the coverage rate between the third layout and the via layer does not reach the standard, the steps S13, S14, S15 and S16 are continuously repeated until the coverage rate reaches the standard. Namely, if the coverage rate still does not reach the standard after the first OPC processing, the edge expanding processing is performed again until the coverage rate reaches the standard. The embodiment of the invention circulates the edge expansion for three times at most, and increases the processing time if the edge expansion is carried out for too many times, thereby influencing the efficiency.
In summary, in the OPC processing method for improving the coverage rate between the metal layer and the via layer according to the embodiment of the present invention, the original layout of the metal layer is processed to obtain the first layout and the second layout, the second layout is divided into a plurality of regions according to the coverage rate of the second layout and the via layer, the sides of the convex corners, where the distance between the first layout and the via layer corresponding to each region reaches the set value, are respectively subjected to edge expansion with different amplitudes, the first layout and the edge expanded first layout are fused to form the third layout, and the third layout is output.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An OPC treatment method for improving coverage rate between a metal layer and a through hole layer is characterized by comprising the following steps:
s11: inputting an original layout of a metal layer, and performing line width amplification processing on the original layout to obtain a first layout;
s12: carrying out de-bulging treatment and curvilinearization treatment on the first layout to obtain a second layout;
s13: calculating the coverage rate between the second layout and the through hole layer, and dividing the second layout into a plurality of regions according to the coverage rate;
s14: selecting convex angles with the distance between the first layout and the through hole layer being a set value and corresponding to each region of the second layout, and performing edge expansion processing with different amplitudes on the edges of the convex angles;
s15: combining the first layout and the first layout after the edge expanding treatment to obtain a third layout;
s16: and if the coverage rate between the third layout and the through hole layer reaches the standard, outputting the third layout.
2. The OPC treatment method of claim 1 for improving coverage between the metal layer and the via layer, wherein if the coverage between the third layout and the via layer does not meet the standard, the steps S13, S14, S15 and S16 are repeated until the coverage meets the standard.
3. The OPC treatment method of claim 1 wherein the coverage is determined to be at least 95% at S16.
4. The OPC treatment method of claim 1 for improving coverage between a metal layer and a via layer wherein the de-bumping and the profiling of the first layout comprises:
and carrying out de-bulging treatment on the first layout, and then carrying out curvilinearization treatment.
5. The OPC treatment method of claim 4 wherein the first de-bumping of the first layout comprises:
and convex shapes are arranged on the edges of the lines of the removed first layout, so that the edges of the lines are straight lines.
6. The OPC treatment method of improving coverage between a metal layer and a via layer according to claim 5, wherein the method of performing the curvilinearization treatment comprises:
the control points are arranged on the lines subjected to the de-bulging treatment, and the connecting lines between the control points are pulled to enable the right-angle lines of the first layout to be changed into curve lines.
7. The OPC treatment method of claim 1 wherein the plurality of regions comprise: a first region, a second region, and a third region; the coverage rate between the first region and the via layer is less than 80%; the coverage rate between the second region and the through hole layer is 80% -90%; and the coverage rate between the third region and the through hole layer is 90-95%.
8. The OPC processing method for improving the coverage between a metal layer and a via layer according to claim 7, wherein the convex angle of which the distance from the first layout to the via layer is a set value and which corresponds to each region of the second layout is selected, and the method of performing the edge expansion processing of different amplitudes on the edge of each convex angle comprises:
selecting a convex angle with a distance between the first layout and the through hole layer corresponding to the first region as a set value, and carrying out edge expansion processing of a first amplitude on the edge of the convex angle; selecting a convex angle with a set value of the distance between the first layout and the through hole layer corresponding to the second region, and performing edge expansion processing of a second amplitude on the edge of the convex angle; and selecting a convex angle with a distance between the first layout and the through hole layer corresponding to the third area as a set value, and performing edge expansion processing of a third amplitude on the edge of the convex angle.
9. The OPC treatment method of claim 8 wherein the first amplitude is 15nm, the second amplitude is 10nm, and the third amplitude is 5 nm.
10. The OPC processing method of improving coverage between a metal layer and a via layer according to claim 1, wherein the set value is a value of one third of a line width of the original layout.
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