CN112217504A - Self-powered MEMS inertial switch - Google Patents

Self-powered MEMS inertial switch Download PDF

Info

Publication number
CN112217504A
CN112217504A CN202011207569.7A CN202011207569A CN112217504A CN 112217504 A CN112217504 A CN 112217504A CN 202011207569 A CN202011207569 A CN 202011207569A CN 112217504 A CN112217504 A CN 112217504A
Authority
CN
China
Prior art keywords
induction
lower electrode
upper electrode
sensing
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011207569.7A
Other languages
Chinese (zh)
Other versions
CN112217504B (en
Inventor
杨卓青
任超
张鹏磊
李亚辉
张浩东
王凯
连江凯
丁桂甫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Jiaotong University
Original Assignee
Shanghai Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Jiaotong University filed Critical Shanghai Jiaotong University
Priority to CN202011207569.7A priority Critical patent/CN112217504B/en
Publication of CN112217504A publication Critical patent/CN112217504A/en
Application granted granted Critical
Publication of CN112217504B publication Critical patent/CN112217504B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/965Switches controlled by moving an element forming part of the switch
    • H03K17/975Switches controlled by moving an element forming part of the switch using a capacitive movable element

Landscapes

  • Micromachines (AREA)

Abstract

The invention provides a self-powered MEMS inertial switch, comprising: an induction upper electrode configured to move in a direction of the induction lower electrode by inertia; an induction lower electrode configured to be fixedly disposed with the housing; when the induction upper electrode is electrically contacted with the induction lower electrode, a pulse induction signal is formed; a charge providing device configured to provide induced charges to the induction upper electrode and the induction lower electrode; and the charge storage device is configured to collect current generated by the charge change when the positions of the sensing upper electrode and the sensing lower electrode are relatively changed, and provide energy of the pulse sensing signal.

Description

Self-powered MEMS inertial switch
Technical Field
The invention relates to the technical field of inertial switches, in particular to a self-powered MEMS inertial switch.
Background
A typical MEMS inertial switch is an inertial device with near-zero power consumption, which consumes no energy in an un-triggered state, but only a small amount of energy when the switch triggers and outputs a pulse signal. Nevertheless, the inertial switch is still not a MEMS device with complete zero power consumption, and in the application scenario of remote monitoring and difficult battery replacement, the problem of complete power consumption resulting in failure of the whole impact monitoring system may still occur.
Disclosure of Invention
The invention aims to provide a self-powered MEMS inertial switch to solve the problem that a battery needs to be replaced in the conventional inertial switch.
To solve the above technical problem, the present invention provides a self-powered MEMS inertial switch, including:
an induction upper electrode configured to move in a direction of the induction lower electrode by inertia;
an induction lower electrode configured to be fixedly disposed with the housing;
when the induction upper electrode is electrically contacted with the induction lower electrode, a pulse induction signal is formed;
a charge providing device configured to provide induced charges to the induction upper electrode and the induction lower electrode;
and the charge storage device is configured to collect current generated by charge change when the positions of the sensing upper electrode and the sensing lower electrode are relatively changed, and provide pulse sensing signal energy.
Optionally, in the self-powered MEMS inertial switch, the sensing lower electrode includes a flexible array-type limit contact and a sensing lower electrode body, the housing includes an insulating substrate, wherein:
the flexible array type limiting contacts are symmetrically distributed on two sides of the sensing lower electrode body, and the flexible array type limiting contacts and the sensing lower electrode body are located on different planes;
the sensing lower electrode body is attached to the insulating substrate, and the flexible array type limiting contacts are fixed on the insulating substrate.
Optionally, in the self-powered MEMS inertial switch, the charge providing device is an electret film, a side length of the electret film is 3000 to 10000 micrometers, and a thickness of the electret film is 6 to 20 micrometers; after the electret film is charged, the electret film is attached to and covers the induction lower polar plate body.
Optionally, from energy supply MEMS inertial switch, still include fixed bearing structure, fixed bearing structure provides the support for the electrode on the response to make the electrode unsettled in the top of flexible array limit contact, electret film and response bottom electrode body on the response, and press the four corners of electret film and be fixed in on the insulating substrate.
Optionally, in the self-powered MEMS inertial switch, the height of the fixed support structure is 150 to 500 micrometers; the quantity of fixed bearing structure is four, including three liquid crystal polymer block and a conductive block, wherein:
the conductive block is electrically connected with the induction upper electrode to form a path of the pulse induction signal and derive a current generated by the charge change.
Optionally, in the self-powered MEMS inertial switch, further including:
a first signal terminal configured to be connected to the conductive block to form a path of the pulse induction signal and draw out a current generated by a charge change;
a second signal terminal configured to connect the flexible array-type limit contacts to form a path of the pulse induction signal;
and the third signal terminal is configured to be connected with the induction lower electrode body so as to lead out current generated by charge change.
Optionally, in the self-powered MEMS inertial switch, the self-powered MEMS inertial switch further includes a serpentine spring and a spring fixing support, wherein:
the spring fixing support is in a square ring shape and is borne on the fixing support structure;
one end of the serpentine spring is connected with the induction upper electrode, and the other end of the serpentine spring is connected with the spring fixing support;
the sensing upper electrode is suspended and supported through the serpentine spring and the spring fixing support to be suspended above the flexible array type limiting contact, the electret film and the sensing lower electrode body.
Optionally, in the self-powered MEMS inertial switch, the sensing upper electrode is formed by deep silicon etching, a side length of the sensing upper electrode is 3000 to 7000 microns, and a thickness of the sensing upper electrode is 200 to 800 microns;
the serpentine spring is of a multi-strand structure and is formed by electroplating metal nickel, the line width of the serpentine spring is 40-100 micrometers, the thickness of the serpentine spring is 20-50 micrometers, and the inner diameter of a semicircle at a corner of the serpentine spring is 10-50 micrometers;
spring fixing support is square frame shape structure, and it forms to electroplate metal nickel through the silicon surface, spring fixing support's interior limit length is 5000 microns ~ 15000 microns, spring fixing support's outer length of side is 10000 microns ~ 20000 microns, spring fixing support's thickness 200 ~ 800 microns.
Optionally, in the self-powered MEMS inertial switch, the flexible array type limit contact is a cantilever beam flexible structure formed by electroplating metal nickel for multiple times, the side length of the cantilever beam support is 200 to 400 micrometers, the height of the cantilever beam support is 60 to 200 micrometers, the length of the cantilever beam is 400 to 800 micrometers, the width of the cantilever beam is 200 to 400 micrometers, and the height of the cantilever beam is 6 to 50 micrometers; the number of the flexible array type limiting contacts is 8-20;
a gap with the height of 60-200 microns is formed between the plane of the cantilever beam of the flexible array type limiting contact and the sensing lower electrode body; the height of the gap between the lower plane of the induction upper electrode and the flexible array type limit contact is 100-300 microns.
The induction lower electrode body is of a square structure and is formed by electroplating metal nickel, the side length of the induction lower electrode body is 3000-6000 microns, and the thickness of the induction lower electrode body is 5-200 microns.
Optionally, in the self-powered MEMS inertial switch, the charge storage device includes a rectifier circuit and a capacitor, the rectifier circuit is configured to convert an alternating current generated by a change of the charge into a direct current and charge the capacitor, and the capacitor is configured to store energy.
In the self-powered MEMS inertial switch provided by the invention, the charge providing device provides induction charges to the induction upper electrode and the induction lower electrode, the charge storage device collects current generated by charge change when the positions of the induction upper electrode and the induction lower electrode are relatively changed and provides energy of pulse induction signals, and the induction upper electrode and the induction lower electrode can generate the pulse induction signals when in contact without battery power supply and without replacing batteries.
Specifically, under the action of electrostatic induction, the induction upper electrode and the induction lower electrode generate induction charges. When the impact threshold value of the switch is not reached, the micro vibration can cause the induction upper electrode to move up and down, the capacitance formed between the induction upper electrode and the induction lower electrode can change, and the induction charge quantity on the induction upper electrode and the induction lower electrode can also change accordingly. The induction upper electrode and the induction lower electrode are connected with two wires (a first signal end and a third signal end) through the induction upper electrode body and are connected to the capacitor (the charge storage device) through the rectifying circuit, the external circuit generates alternating current through the change of induction charges, and the electric energy is stored in the capacitor through rectification processing. When the sensor is impacted by the threshold acceleration in the sensitive direction, the movable sensing upper electrode can generate enough displacement and flexibly contact and collide with the flexible array type limit contact, the switch is switched on at the moment, and the electric energy stored in the capacitor is released and utilized to form a pulse sensing signal so as to send out an alarm.
The induction upper electrode plays two roles, and the induction charge converts vibration energy into electric energy and contacts the flexible array type limit contact to conduct the circuit when the acceleration threshold of the switch is reached.
The invention introduces the preprocessed electret film into the inertial switch, so that the inertial micro-device can get rid of the constraint of battery energy supply, and long-time work under a remote monitoring scene is realized. The invention couples the energy collecting device and the MEMS inertial switch together, and realizes the self-powered MEMS inertial switch with real zero power consumption.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a self-powered MEMS inertial switch according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an insulating substrate, flexible array-type position-limiting contacts, and an inductive lower electrode body according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a flexible array of limit contacts according to an embodiment of the invention;
FIG. 4 is a schematic structural diagram of an inductive bottom electrode body, an electret film, a liquid crystal polymer block, and a conductive block according to an embodiment of the invention;
FIG. 5 is a schematic structural diagram of an inductive top electrode and a serpentine spring according to an embodiment of the present invention;
FIG. 6 is a schematic partial cross-sectional view of an insulating substrate, flexible array-type limiting contacts, and an inductive lower electrode body according to an embodiment of the invention;
in the figure: 1-an inductive upper electrode; 2-a serpentine spring; 3-fixing a support by a spring; 4-liquid crystal polymer block; 5-a conductive block; 6-flexible array type limit contacts; 7-an electret film; 8-induction lower electrode body; 9-insulating substrate.
Detailed Description
The self-powered MEMS inertial switch of the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Furthermore, features from different embodiments of the invention may be combined with each other, unless otherwise indicated. For example, a feature of the second embodiment may be substituted for a corresponding or functionally equivalent or similar feature of the first embodiment, and the resulting embodiments are likewise within the scope of the disclosure or recitation of the present application.
The invention provides a self-powered MEMS inertial switch, which aims to solve the problem that a battery needs to be replaced in the conventional inertial switch.
To achieve the above idea, the present invention provides a self-powered MEMS inertial switch, comprising: an induction upper electrode configured to move in a direction of the induction lower electrode by inertia; an induction lower electrode configured to be fixedly disposed with the housing; when the induction upper electrode is electrically contacted with the induction lower electrode, a pulse induction signal is formed; a charge providing device configured to provide induced charges to the induction upper electrode and the induction lower electrode; and the charge storage device is configured to collect current generated by charge change when the positions of the sensing upper electrode and the sensing lower electrode are relatively changed, and provide pulse sensing signal energy.
The present embodiment provides a self-powered MEMS inertial switch, as shown in fig. 1, including: an induction upper electrode 1 configured to move in a direction of the induction lower electrode by inertia; an induction lower electrode configured to be fixedly disposed with the housing; when the induction upper electrode 1 is electrically contacted with the induction lower electrode, a pulse induction signal is formed; a charge providing device configured to provide induced charges to the induction upper electrode 1 and the induction lower electrode; and the charge storage device is configured to collect current generated by charge change when the positions of the induction upper electrode 1 and the induction lower electrode are relatively changed, and provide pulse induction signal energy.
As shown in fig. 2 and 6, in the self-powered MEMS inertial switch, the sensing lower electrode includes a flexible array type limit contact 6 and a sensing lower electrode body 8, the housing includes an insulating substrate 9, wherein: the flexible array type limiting contacts 6 are symmetrically distributed on two sides of the sensing lower electrode body 8, and the flexible array type limiting contacts 6 and the sensing lower electrode body 8 are located on different planes; the induction lower electrode body 8 is attached to the insulating substrate 9, and the flexible array type limiting contacts 6 are fixed on the insulating substrate 9. In the self-powered MEMS inertial switch, the charge providing device is an electret film 7, the side length of the electret film 7 is 3000-10000 microns, and the thickness of the electret film 7 is 6-20 microns; after being charged, the electret film 7 is attached to and covers the induction lower pole plate body 8.
As shown in fig. 4, the self-powered MEMS inertial switch further includes a fixed support structure, the fixed support structure provides support for the sensing upper electrode 1, so that the sensing upper electrode 1 is suspended above the flexible array type limit contact 6, the electret film 7 and the sensing lower electrode body 8, and four corners of the electret film 7 are pressed and fixed on the insulating substrate 9. In the self-powered MEMS inertial switch, the height of the fixed supporting structure is 150-500 microns; the quantity of fixed bearing structure is four, including three liquid crystal polymer block 4 and a conductive block 5, wherein: the conductive block 5 is electrically connected with the sensing upper electrode 1 to form a path of the pulse sensing signal and to derive a current generated by the charge change. In the self-powered MEMS inertial switch, further comprising: a first signal terminal configured to be connected to the conductive block 5 to form a path of the pulse induction signal and draw out a current generated by a charge change; a second signal terminal configured to connect the flexible array-type limit contacts 6 to form a path of the pulse induction signal; and a third signal terminal configured to be connected to the sensing lower electrode body 8 to draw out a current generated by the charge variation.
As shown in fig. 5, the self-powered MEMS inertial switch further includes a serpentine spring 2 and a spring fixing support 3, wherein: the spring fixing support 3 is in a square ring shape and is borne on a fixing support structure; one end of the serpentine spring 2 is connected with the induction upper electrode 1, and the other end of the serpentine spring is connected with the spring fixing support 3; the sensing upper electrode 1 is suspended and supported through the serpentine spring 2 and the spring fixing support 3 and is suspended above the flexible array type limiting contact 6, the electret film 7 and the sensing lower electrode body 8. In the self-powered MEMS inertial switch, the induction upper electrode 1 is formed by deep silicon etching, the side length of the induction upper electrode 1 is 3000-7000 microns, and the thickness of the induction upper electrode 1 is 200-800 microns; the serpentine spring 2 is of a multi-strand structure and is formed by electroplating metal nickel, the line width of the serpentine spring 2 is 40-100 micrometers, the thickness of the serpentine spring 2 is 20-50 micrometers, and the inner diameter of a semicircle at a corner of the serpentine spring 2 is 10-50 micrometers; spring fixing support 3 is square frame shape structure, and it forms to electroplate metal nickel through the silicon surface, spring fixing support 3's interior limit length is 5000 microns ~ 15000 microns, spring fixing support 3's outer limit length is 10000 microns ~ 20000 microns, spring fixing support 3's thickness 200 ~ 800 microns.
As shown in fig. 3, in the self-powered MEMS inertial switch, the flexible array type limit contact 6 is a cantilever beam flexible structure formed by electroplating metal nickel for multiple times, the side length of the cantilever beam support is 200 to 400 micrometers, the height of the cantilever beam support is 60 to 200 micrometers, the length of the cantilever beam is 400 to 800 micrometers, the width of the cantilever beam is 200 to 400 micrometers, and the height of the cantilever beam is 6 to 50 micrometers; the number of the flexible array type limiting contacts 6 is 8-20; a gap with the height of 60-200 microns is formed between the plane of the cantilever beam of the flexible array type limiting contact 6 and the sensing lower electrode body 8; the height of the gap between the lower plane of the induction upper electrode 1 and the flexible array type limit contact 6 is 100-300 microns. The induction lower electrode body 8 is of a square structure and is formed by electroplating metal nickel, the side length of the induction lower electrode body 8 is 3000-6000 microns, and the thickness of the induction lower electrode body 8 is 5-200 microns.
Further, in the self-powered MEMS inertial switch, the charge storage device includes a rectifying circuit and a capacitor, the rectifying circuit is configured to convert an ac current generated by a change in charge into a dc current and charge the capacitor, and the capacitor is configured to store energy.
In the self-powered MEMS inertial switch provided by the invention, the charge providing device provides induction charge to the induction lower electrode, the charge storage device collects current generated by charge change when the positions of the induction upper electrode 1 and the induction lower electrode are relatively changed and provides energy of pulse induction signals, and the induction upper electrode 1 and the induction lower electrode can generate the pulse induction signals when in contact without battery power supply without replacing batteries.
Specifically, under the action of electrostatic induction, the induction upper electrode 1 and the induction lower electrode generate induction charges. When the impact threshold of the switch is not reached, the micro vibration can cause the induction upper electrode 1 to move up and down, the capacitance formed between the induction upper electrode 1 and the induction lower electrode can change, and the induction charge quantity on the induction upper electrode 1 and the induction lower electrode can also change accordingly. Two wires (a first signal end and a third signal end) are connected through the sensing upper electrode 1 and the sensing lower electrode body and are connected to the capacitor (a charge storage device) through the rectifying circuit, the external circuit generates alternating current through the change of the sensing charge, and the electric energy is stored in the capacitor through rectifying processing. When the sensor is impacted by the threshold acceleration in the sensitive direction, the movable sensing upper electrode 1 can generate enough displacement and flexibly contact and collide with the flexible array type limit contact 6, the switch is switched on at the moment, and the electric energy stored in the capacitor is released and utilized to form a pulse sensing signal, so that an alarm can be sent.
According to the invention, the preprocessed electret film 7 is introduced into the inertial switch, so that the inertial micro-device can get rid of the constraint of battery energy supply, and long-time work under a remote monitoring scene is realized.
In summary, the above embodiments have described the different configurations of the self-powered MEMS inertial switch in detail, and it is understood that the present invention includes, but is not limited to, the configurations listed in the above embodiments, and any modifications based on the configurations provided in the above embodiments are within the scope of the present invention. One skilled in the art can take the contents of the above embodiments to take a counter-measure.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (10)

1. A self-powered MEMS inertial switch, comprising:
an induction upper electrode configured to move in a direction of the induction lower electrode by inertia;
an induction lower electrode configured to be fixedly disposed with the housing;
when the induction upper electrode is electrically contacted with the induction lower electrode, a pulse induction signal is formed;
a charge providing device configured to provide induced charges to the induction upper electrode and the induction lower electrode;
and the charge storage device is configured to collect current generated by charge change when the positions of the sensing upper electrode and the sensing lower electrode are relatively changed, and provide pulse sensing signal energy.
2. The self-powered MEMS inertial switch of claim 1 wherein the sensing lower electrode comprises a flexible array of limit contacts and a sensing lower electrode body, the housing comprising an insulating substrate, wherein:
the flexible array type limiting contacts are symmetrically distributed on two sides of the sensing lower electrode body, and the flexible array type limiting contacts and the sensing lower electrode body are located on different planes;
the sensing lower electrode body is attached to the insulating substrate, and the flexible array type limiting contacts are fixed on the insulating substrate.
3. The self-powered MEMS inertial switch of claim 2, wherein the charge providing means is an electret film having a side length of 3000 to 10000 microns and a thickness of 6 to 20 microns; after the electret film is charged, the electret film is attached to and covers the induction lower polar plate body.
4. The self-powered MEMS inertial switch of claim 3 further comprising a fixed support structure that provides support for the sensing upper electrode, such that the sensing upper electrode is suspended above the flexible array-type limit contacts, the electret film and the sensing lower electrode body, and four corners of the electret film are pressed and fixed on the insulating substrate.
5. The self-powered MEMS inertial switch of claim 4, wherein the fixed support structure has a height of 150-500 microns; the quantity of fixed bearing structure is four, including three liquid crystal polymer block and a conductive block, wherein:
the conductive block is electrically connected with the induction upper electrode to form a path of the pulse induction signal and derive a current generated by the charge change.
6. The self-powered MEMS inertial switch of claim 5, further comprising:
a first signal terminal configured to be connected to the conductive block to form a path of the pulse induction signal and draw out a current generated by a charge change;
a second signal terminal configured to connect the flexible array-type limit contacts to form a path of the pulse induction signal;
and the third signal terminal is configured to be connected with the induction lower electrode body so as to lead out current generated by charge change.
7. The self-energizing MEMS inertial switch of claim 4, further comprising a serpentine spring and a spring anchor, wherein:
the spring fixing support is in a square ring shape and is borne on the fixing support structure;
one end of the serpentine spring is connected with the induction upper electrode, and the other end of the serpentine spring is connected with the spring fixing support;
the sensing upper electrode is suspended and supported through the serpentine spring and the spring fixing support to be suspended above the flexible array type limiting contact, the electret film and the sensing lower electrode body.
8. The self-powered MEMS inertial switch of claim 7,
the induction upper electrode is formed by deep silicon etching, the side length of the induction upper electrode is 3000-7000 microns, and the thickness of the induction upper electrode is 200-800 microns;
the serpentine spring is of a multi-strand structure and is formed by electroplating metal nickel, the line width of the serpentine spring is 40-100 micrometers, the thickness of the serpentine spring is 20-50 micrometers, and the inner diameter of a semicircle at a corner of the serpentine spring is 10-50 micrometers;
spring fixing support is square frame shape structure, and it forms to electroplate metal nickel through the silicon surface, spring fixing support's interior limit length is 5000 microns ~ 15000 microns, spring fixing support's outer length of side is 10000 microns ~ 20000 microns, spring fixing support's thickness 200 ~ 800 microns.
9. The self-powered MEMS inertial switch of claim 2,
the flexible array type limiting contact is a cantilever beam flexible structure and is formed by electroplating metal nickel for multiple times, the side length of a cantilever beam support is 200-400 micrometers, the height of the cantilever beam support is 60-200 micrometers, the length of a cantilever beam is 400-800 micrometers, the width of the cantilever beam is 200-400 micrometers, and the height of the cantilever beam is 6-50 micrometers; the number of the flexible array type limiting contacts is 8-20;
a gap with the height of 60-200 microns is formed between the plane of the cantilever beam of the flexible array type limiting contact and the sensing lower electrode body; the height of the gap between the lower plane of the induction upper electrode and the flexible array type limit contact is 100-300 microns.
The induction lower electrode body is of a square structure and is formed by electroplating metal nickel, the side length of the induction lower electrode body is 3000-6000 microns, and the thickness of the induction lower electrode body is 5-200 microns.
10. The self-powered MEMS inertial switch of claim 1, wherein the charge storage device comprises a rectifying circuit for converting alternating current generated by the change in charge into direct current and charging a capacitor for storing energy.
CN202011207569.7A 2020-11-03 2020-11-03 Self-powered MEMS inertial switch Active CN112217504B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011207569.7A CN112217504B (en) 2020-11-03 2020-11-03 Self-powered MEMS inertial switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011207569.7A CN112217504B (en) 2020-11-03 2020-11-03 Self-powered MEMS inertial switch

Publications (2)

Publication Number Publication Date
CN112217504A true CN112217504A (en) 2021-01-12
CN112217504B CN112217504B (en) 2022-09-02

Family

ID=74058051

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011207569.7A Active CN112217504B (en) 2020-11-03 2020-11-03 Self-powered MEMS inertial switch

Country Status (1)

Country Link
CN (1) CN112217504B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113281898A (en) * 2021-05-25 2021-08-20 中国科学院上海微系统与信息技术研究所 MEMS micro-mirror unit and MEMS micro-mirror array
CN114839398A (en) * 2022-04-27 2022-08-02 东南大学 Capacitive flexible acceleration sensor and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070273463A1 (en) * 2006-02-04 2007-11-29 Evigia Systems, Inc. Micro-electro-mechanical module
CN103825494A (en) * 2014-02-20 2014-05-28 东南大学 Fixed supporting beam vibration electromagnetic self-powered microsensor in radio frequency receiving and transmitting assembly of Internet of Things
CN105225887A (en) * 2015-10-15 2016-01-06 上海交通大学 A kind of micro-mechanical inertia switch of tight constraint type level sensitivity
CN106024507A (en) * 2016-07-12 2016-10-12 上海交通大学 Electrostatic locking vertical sensitive micromechanical inertial switch
CN106683652A (en) * 2017-02-28 2017-05-17 孝感量子机电科技有限公司 Piezoelectric flexible thin film electronic piano
CN107919254A (en) * 2017-10-30 2018-04-17 上海交通大学 A kind of electrostatic locking inertia switch with flexible array contact

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070273463A1 (en) * 2006-02-04 2007-11-29 Evigia Systems, Inc. Micro-electro-mechanical module
CN103825494A (en) * 2014-02-20 2014-05-28 东南大学 Fixed supporting beam vibration electromagnetic self-powered microsensor in radio frequency receiving and transmitting assembly of Internet of Things
CN105225887A (en) * 2015-10-15 2016-01-06 上海交通大学 A kind of micro-mechanical inertia switch of tight constraint type level sensitivity
CN106024507A (en) * 2016-07-12 2016-10-12 上海交通大学 Electrostatic locking vertical sensitive micromechanical inertial switch
CN106683652A (en) * 2017-02-28 2017-05-17 孝感量子机电科技有限公司 Piezoelectric flexible thin film electronic piano
CN107919254A (en) * 2017-10-30 2018-04-17 上海交通大学 A kind of electrostatic locking inertia switch with flexible array contact

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113281898A (en) * 2021-05-25 2021-08-20 中国科学院上海微系统与信息技术研究所 MEMS micro-mirror unit and MEMS micro-mirror array
CN114839398A (en) * 2022-04-27 2022-08-02 东南大学 Capacitive flexible acceleration sensor and preparation method thereof

Also Published As

Publication number Publication date
CN112217504B (en) 2022-09-02

Similar Documents

Publication Publication Date Title
CN112217504B (en) Self-powered MEMS inertial switch
JP5611565B2 (en) Piezoelectric vibration generator and power generator using the same
CN106558907B (en) Terminal charging device and terminal
JP5862567B2 (en) Vibration sensor
EP1831872A2 (en) Method and system using liquid dielectric for electrostatic power generation
CN109216753B (en) Solid lithium ion battery
CN112310556A (en) Battery module isolation member and assembly method thereof, battery module, battery pack, vehicle and battery expansion monitoring method
CN104143473A (en) Acceleration switch and control method of acceleration switch
JP3611840B2 (en) Piezoelectric device
CN107026581B (en) Electrostatic energy collector and preparation method thereof
US11451167B2 (en) Vibration-driven energy harvesting device and vibration-driven energy harvester
CN111313745B (en) Friction nanometer generator, power generation method and power generation system
CN209948992U (en) Combined type energy collector and wearable electronic equipment
JP5741001B2 (en) Power generator
CN113193786A (en) Vibration energy taking device, power supply and temperature sensor
JP6314530B2 (en) Pressure sensor and pressure detection device
CN111245282B (en) Reconfigurable wind energy harvesting-storage integrated unit and method
CN109444545A (en) A kind of resistance determinator and its method based on friction nanometer power generator
CN206865373U (en) Electrostatic Energy Harvester
JP2004282978A (en) Portable generator
CN111740638A (en) Composite energy collector and sensing integrated microsystem
CN221202210U (en) Micro-vibration self-energy-taking system
CN114964463A (en) Film vibration sensor based on friction nanometer generator
CN220242673U (en) Electronic skin based on MXene polymers
JP2012052871A (en) Vibration detecting sensor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant