CN112213927B - Cleaning method for base chassis module of photoetching machine - Google Patents

Cleaning method for base chassis module of photoetching machine Download PDF

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CN112213927B
CN112213927B CN202011141575.7A CN202011141575A CN112213927B CN 112213927 B CN112213927 B CN 112213927B CN 202011141575 A CN202011141575 A CN 202011141575A CN 112213927 B CN112213927 B CN 112213927B
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parts
cleaning
polishing
photoetching machine
mixed solution
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CN112213927A (en
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何平
胡志华
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Suzhou Hangling Micro Precision Components Co ltd
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Suzhou Hangling Micro Precision Components Co ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a method for cleaning a base chassis module of a photoetching machine, which comprises the following steps: s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves; s102, cleaning the surface of the substrate frame module of the photoetching machine by using clear water for the first time; s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing; s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again; the rust remover solution is used for soaking the photoetching machine base frame module, so that incrustation scale and rust stains on the surface can be removed, the surface of the photoetching machine base frame module can be polished by using the polishing machine, the polishing effect is enhanced by using components such as silicon dioxide polishing powder and the like in cooperation with the use of a polishing agent, particles with various sizes from micron to submicron on the surface of the photoetching machine base frame module can be efficiently removed by using an ultrasonic cleaning method in cooperation with the use of a cleaning solution, and silicon dioxide can be effectively prevented from being separated out.

Description

Cleaning method for base chassis module of photoetching machine
Technical Field
The invention relates to the technical field of cleaning of a base frame module of a photoetching machine, in particular to a method for cleaning the base frame module of the photoetching machine.
Background
After the photoetching machine substrate frame module is processed, the photoetching machine substrate frame module needs to be cleaned, the photoetching machine substrate frame module has extremely high requirement on the surface cleanliness, the surface can not be precipitated with silicon dioxide, the traditional wiping method can effectively remove large-scale particles above micron, but is difficult to remove particles below micron, and the efficiency is very low when large-area precise elements are wiped or mass production is needed due to inconsistent technical level and proficiency of wiping personnel; RCA cleaning belongs to chemical cleaning, and the adsorption force between particles and the surface of a precision element can be reduced by using different chemical solvents, but if the concentration of a chemical solution is controlled improperly, the surface of the precision element is seriously corroded, so that the surface roughness is increased; before the photoetching machine base frame module is cleaned by ultrasonic waves, the surface of the photoetching machine base frame module is subjected to rust removal and polishing, the existing rust removal and polishing methods are poor in effect, and the effect is not obvious after later cleaning, so that the method for cleaning the photoetching machine base frame module is provided.
Disclosure of Invention
The present invention is directed to a method for cleaning a base chassis module of a lithography machine, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a cleaning method of a base chassis module of a photoetching machine comprises the following steps:
s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves;
s102, cleaning the surface of the substrate frame module of the photoetching machine by using clear water for the first time;
s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing;
s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again;
s105, soaking in cleaning fluid for 20-30min, and washing with clear water;
s106, ultrasonically cleaning for 10-20min by using ethanol;
s107, drying the base chassis module in a drying chamber for 10-20min to finish cleaning the base chassis module of the photoetching machine.
As further preferable in the present technical solution: in S1, the rust remover is prepared from the following raw materials: the rust remover comprises ethylene glycol, glycerol, a pH value regulator, aluminum phosphate, phosphoric acid, aluminum hydroxide and water, wherein the rust remover comprises the following raw materials in parts by weight: 5-8 parts of ethylene glycol, 6-10 parts of glycerol, 10-20 parts of pH value regulator, 5-8 parts of aluminum phosphate, 4-6 parts of phosphoric acid, 6-10 parts of aluminum hydroxide and 10-20 parts of water.
As further preferable in the present technical solution: the pH value regulator is sodium hydroxide.
As further preferable in the present technical solution: the preparation method of the rust remover comprises the following steps:
s201, heating ethylene glycol, glycerol, aluminum phosphate, phosphoric acid, aluminum hydroxide and water to 70-80 ℃;
s202, stirring the obtained mixed solution for 10-20min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature;
s203, adding a pH value regulator into the obtained mixed solution, stirring for 8-12min at the rotation speed of 150-.
As further preferable in the present technical solution: in S102, the rotation speed of the spindle of the polishing machine is 100-120r/min, the pressure of the polishing machine on the precision element is 1-1.2bar, and the polishing temperature is 20-30 ℃.
As further preferable in the present technical solution: in S103, when polishing the substrate holder module of the lithography machine, a polishing agent needs to be added, and the polishing agent is prepared from the following components: pH regulator, polyglycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid LAl 3+ The polishing agent comprises the following raw materials in parts by weight: 10-20 parts of pH value regulator, 10-15 parts of polyethylene glycol, 5-10 parts of phosphoric acid, 10-16 parts of silicon dioxide polishing powder, 6-9 parts of sodium dodecyl benzene sulfonate, 3-6 parts of sulfuric acid and LAl 3+ 5-8 parts of coupling agent, 6-8 parts of coupling agent and 10-20 parts of water.
As further preferable in the present technical solution: the preparation method of the polishing agent comprises the following steps:
s301, mixing polyethylene glycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid and LAl 3+ Heating the coupling agent and water to 60-80 ℃;
s302, stirring the obtained mixed solution for 15-22min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature;
s303, adding a pH value regulator into the obtained mixed solution, stirring for 5-10min at the rotation speed of 150-.
As further preferable in the present technical solution: in S105, the cleaning solution is prepared from the following components: potassium permanganate, ethylene glycol monobutyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water, wherein the cleaning solution comprises the following raw materials in parts by weight: 10-15 parts of potassium permanganate, 6-8 parts of ethylene glycol monobutyl ether, 6-9 parts of butynediol, 3-4 parts of hexamethylenetetramine, 10-12 parts of polyvinyl alcohol and 15-20 parts of water.
As further preferable in the present technical solution: the preparation method of the cleaning solution comprises the following steps:
s401, heating potassium permanganate, ethylene glycol butyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water to 65-75 ℃;
s402, stirring the obtained mixed solution for 15-22min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature to obtain the cleaning solution.
Compared with the prior art, the invention has the beneficial effects that: the rust remover solution is used for soaking the photoetching machine base frame module, so that incrustation scale and rust stains on the surface can be removed, the surface of the photoetching machine base frame module can be polished by using the polishing machine, the polishing effect is enhanced by using components such as silicon dioxide polishing powder and the like in cooperation with the use of a polishing agent, particles with various sizes from micron to submicron on the surface of the photoetching machine base frame module can be efficiently removed by using an ultrasonic cleaning method in cooperation with the use of a cleaning solution, and silicon dioxide can be effectively prevented from being separated out.
Drawings
FIG. 1 is a flow chart of the method of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example one
Referring to fig. 1, the present invention provides a technical solution: a cleaning method of a base chassis module of a photoetching machine comprises the following steps:
s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves;
s102, cleaning the surface of the substrate frame module of the photoetching machine by using clear water for the first time;
s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing;
s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again;
s105, soaking in cleaning solution for 20min, and washing with clear water;
s106, ultrasonically cleaning for 10min by using ethanol;
and S107, drying the substrate module in a drying chamber for 10min to complete the cleaning of the base chassis module of the photoetching machine.
In this embodiment, specifically: in S1, the rust remover is prepared from the following raw materials: the rust remover comprises ethylene glycol, glycerol, a pH value regulator, aluminum phosphate, phosphoric acid, aluminum hydroxide and water, wherein the rust remover comprises the following raw materials in parts by weight: 5 parts of ethylene glycol, 6 parts of glycerol, 10 parts of pH regulator, 5 parts of aluminum phosphate, 4 parts of phosphoric acid, 6 parts of aluminum hydroxide and 10 parts of water.
In this embodiment, specifically: the pH value regulator is sodium hydroxide.
In this embodiment, specifically: the preparation method of the rust remover comprises the following steps:
s201, heating ethylene glycol, glycerol, aluminum phosphate, phosphoric acid, aluminum hydroxide and water to 70 ℃;
s202, stirring the obtained mixed solution for 10min at the rotating speed of 160r/min, and cooling the mixed solution to room temperature;
and S203, adding a pH value regulator into the obtained mixed solution, stirring for 8min at a rotation speed of 150r/min, and regulating the pH value of the mixed solution to 7 to obtain the rust remover.
In this embodiment, specifically: in S102, the rotation speed of the spindle of the polishing machine is 100r/min, the pressure of the polishing machine on the precision element is 1bar, and the polishing temperature is 20 ℃.
In this embodiment, specifically: in S103, when polishing the substrate holder module of the lithography machine, a polishing agent is required to be added, and the polishing agent is prepared from the following components: pH regulator, polyglycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid LAl 3+ The polishing agent comprises a coupling agent and water, wherein the polishing agent comprises the following raw materials in parts by weight: PH value regulator10 parts of polyethylene glycol, 10 parts of phosphoric acid, 10 parts of silicon dioxide polishing powder, 6 parts of sodium dodecyl benzene sulfonate, 3 parts of sulfuric acid and LAl 3+ 5 parts of coupling agent, 6 parts of coupling agent and 10 parts of water.
In this embodiment, specifically: the preparation method of the polishing agent comprises the following steps:
s301, mixing polyethylene glycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid and LAl 3+ Heating the coupling agent and water to 60 ℃;
s302, stirring the obtained mixed solution for 15min at the rotating speed of 160r/min, and cooling the mixed solution to room temperature;
and S303, adding a pH value regulator into the obtained mixed solution, stirring for 5min at a rotation speed of 150r/min, and regulating the pH value of the mixed solution to 8 to obtain the polishing agent.
In this embodiment, specifically: in S105, the cleaning solution is prepared from the following components: the cleaning solution comprises potassium permanganate, ethylene glycol monobutyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water, wherein the cleaning solution comprises the following raw materials in parts by weight: 10 parts of potassium permanganate, 6 parts of ethylene glycol butyl ether, 6 parts of butynediol, 3 parts of hexamethylenetetramine, 10 parts of polyvinyl alcohol and 15 parts of water.
In this embodiment, specifically: the preparation method of the cleaning solution comprises the following steps:
s401, heating potassium permanganate, ethylene glycol butyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water to 65 ℃;
s402, stirring the obtained mixed solution for 15min at the rotating speed of 160r/min, and cooling the mixed solution to room temperature to obtain the cleaning solution.
Example two
Referring to fig. 1, the present invention provides a technical solution: a cleaning method of a base chassis module of a photoetching machine comprises the following steps:
s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves;
s102, cleaning the surface of the substrate frame module of the photoetching machine by using clear water for the first time;
s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing;
s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again;
s105, soaking in cleaning solution for 25min, and washing with clear water;
s106, ultrasonically cleaning for 15min by using ethanol;
s107, drying the substrate module in a drying chamber for 15min to finish cleaning the base chassis module of the photoetching machine.
In this embodiment, specifically: in S1, the rust remover is prepared from the following raw materials: the rust remover comprises ethylene glycol, glycerol, a pH value regulator, aluminum phosphate, phosphoric acid, aluminum hydroxide and water, wherein the rust remover comprises the following raw materials in parts by weight: 6 parts of ethylene glycol, 8 parts of glycerol, 15 parts of pH value regulator, 7 parts of aluminum phosphate, 5 parts of phosphoric acid, 8 parts of aluminum hydroxide and 15 parts of water.
In this embodiment, specifically: the pH value regulator is sodium hydroxide.
In this embodiment, specifically: the preparation method of the rust remover comprises the following steps:
s201, heating ethylene glycol, glycerol, aluminum phosphate, phosphoric acid, aluminum hydroxide and water to 75 ℃;
s202, stirring the obtained mixed solution for 15min at the rotating speed of 170r/min, and cooling the mixed solution to room temperature;
and S203, adding a pH value regulator into the obtained mixed solution, stirring for 10min at the rotating speed of 155r/min, and regulating the pH value of the mixed solution to 8 to obtain the rust remover.
In this embodiment, specifically: in S102, the rotation speed of the spindle of the polishing machine is 110r/min, the pressure of the polishing machine on the precision element is 1.1bar, and the polishing temperature is 25 ℃.
In this embodiment, specifically: in S103, when polishing the substrate holder module of the lithography machine, a polishing agent needs to be added, and the polishing agent is prepared from the following components:pH regulator, polyglycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid LAl 3+ The polishing agent comprises the following raw materials in parts by weight: 15 parts of pH value regulator, 13 parts of polyethylene glycol, 7 parts of phosphoric acid, 14 parts of silicon dioxide polishing powder, 7 parts of sodium dodecyl benzene sulfonate, 3-6 parts of sulfuric acid, LAl 3+ 6 parts of coupling agent, 7 parts of coupling agent and 15 parts of water.
In this embodiment, specifically: the preparation method of the polishing agent comprises the following steps:
s301, mixing polyethylene glycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid and LAl 3+ Heating the coupling agent and water to 70 ℃;
s302, stirring the obtained mixed solution for 19min at the rotating speed of 170r/min, and cooling the mixed solution to room temperature;
and S303, adding a pH value regulator into the obtained mixed solution, stirring for 8min at the rotating speed of 155r/min, and regulating the pH value of the mixed solution to 9 to obtain the polishing agent.
In this embodiment, specifically: in S105, the cleaning solution is prepared from the following components: the cleaning solution comprises potassium permanganate, ethylene glycol monobutyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water, wherein the cleaning solution comprises the following raw materials in parts by weight: 13 parts of potassium permanganate, 7 parts of ethylene glycol butyl ether, 8 parts of butynediol, 3.5 parts of hexamethylenetetramine, 11 parts of polyvinyl alcohol and 17 parts of water.
In this embodiment, specifically: the preparation method of the cleaning solution comprises the following steps:
s401, heating potassium permanganate, ethylene glycol butyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water to 70 ℃;
s402, stirring the obtained mixed solution for 17min at the rotating speed of 170r/min, and cooling the mixed solution to room temperature to obtain the cleaning solution.
EXAMPLE III
Referring to fig. 1, the present invention provides a technical solution: a cleaning method of a base chassis module of a photoetching machine comprises the following steps:
s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves;
s102, cleaning the surface of the substrate frame module of the photoetching machine by using clear water for the first time;
s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing;
s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again;
s105, soaking in a cleaning solution for 30min, and washing with clear water;
s106, ultrasonically cleaning for 20min by using ethanol;
and S107, drying the substrate module in a drying chamber for 20min to complete the cleaning of the base chassis module of the photoetching machine.
In this embodiment, specifically: in S1, the rust remover is prepared from the following raw materials: the rust remover comprises ethylene glycol, glycerol, a pH value regulator, aluminum phosphate, phosphoric acid, aluminum hydroxide and water, wherein the rust remover comprises the following raw materials in parts by weight: 8 parts of ethylene glycol, 10 parts of glycerol, 20 parts of pH value regulator, 8 parts of aluminum phosphate, 6 parts of phosphoric acid, 10 parts of aluminum hydroxide and 20 parts of water.
In this embodiment, specifically: the pH value regulator is sodium hydroxide.
In this embodiment, specifically: the preparation method of the rust remover comprises the following steps:
s201, heating ethylene glycol, glycerol, aluminum phosphate, phosphoric acid, aluminum hydroxide and water to 80 ℃;
s202, stirring the obtained mixed solution for 20min at the rotating speed of 180r/min, and cooling the mixed solution to room temperature;
and S203, adding a pH value regulator into the obtained mixed solution, stirring for 12min at a rotating speed of 160r/min, and regulating the pH value of the mixed solution to 9 to obtain the rust remover.
In this embodiment, specifically: in S102, the rotation speed of the spindle of the polishing machine is 120r/min, the pressure of the polishing machine on the precision element is 1.2bar, and the polishing temperature is 30 ℃.
In this embodiment, specifically: in S103, when polishing the substrate holder module of the lithography machine, a polishing agent needs to be added, and the polishing agent is prepared from the following components: pH regulator, polyglycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid LAl 3+ The polishing agent comprises the following raw materials in parts by weight: 20 parts of pH value regulator, 15 parts of polyethylene glycol, 10 parts of phosphoric acid, 16 parts of silicon dioxide polishing powder, 9 parts of sodium dodecyl benzene sulfonate, 6 parts of sulfuric acid, LAl parts 3+ 8 parts of coupling agent and 20 parts of water.
In this embodiment, specifically: the preparation method of the polishing agent comprises the following steps:
s301, mixing polyethylene glycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid and LAl 3+ Heating the coupling agent and water to 80 ℃;
s302, stirring the obtained mixed solution for 22min at the rotating speed of 180r/min, and cooling the mixed solution to room temperature;
and S303, adding a pH value regulator into the obtained mixed solution, stirring for 10min at a rotation speed of 160r/min, and regulating the pH value of the mixed solution to 10 to obtain the polishing agent.
In this embodiment, specifically: in S105, the cleaning solution is prepared from the following components: the cleaning solution comprises potassium permanganate, ethylene glycol monobutyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water, wherein the cleaning solution comprises the following raw materials in parts by weight: 15 parts of potassium permanganate, 8 parts of ethylene glycol butyl ether, 9 parts of butynediol, 4 parts of hexamethylenetetramine, 12 parts of polyvinyl alcohol and 20 parts of water.
In this embodiment, specifically: the preparation method of the cleaning solution comprises the following steps:
s401, heating potassium permanganate, ethylene glycol butyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water to 75 ℃;
s402, stirring the obtained mixed solution for 22min at the rotating speed of 180r/min, and cooling the mixed solution to room temperature to obtain the cleaning solution.
The surface of the photoetching machine base frame module can be polished by a polishing machine, the polishing effect is enhanced by using components such as silicon dioxide polishing powder and the like, and through an ultrasonic cleaning method and using a cleaning liquid, particles with various sizes from micron to submicron on the surface of the photoetching machine base frame module can be efficiently removed, so that the silicon dioxide can be effectively prevented from being separated out.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (7)

1. A cleaning method of a base chassis module of a photoetching machine is characterized by comprising the following steps: the method comprises the following steps:
s101, removing rust, namely adding a rust remover into the cleaning tank, and performing rust removal and cleaning on the photoetching machine substrate frame module by using ultrasonic waves, wherein the rust remover is prepared from the following raw materials: the rust remover comprises ethylene glycol, glycerol, a pH value regulator, aluminum phosphate, phosphoric acid, aluminum hydroxide and water, wherein the rust remover comprises the following raw materials in parts by weight: 5-8 parts of ethylene glycol, 6-10 parts of glycerol, 10-20 parts of pH value regulator, 5-8 parts of aluminum phosphate, 4-6 parts of phosphoric acid, 6-10 parts of aluminum hydroxide and 10-20 parts of water;
s102, cleaning the surface of the photoetching machine substrate frame module by using clear water for the first time, wherein the pH value regulator is sodium hydroxide;
s103, polishing, namely putting the substrate frame module of the photoetching machine on a polishing machine for polishing;
s104, cleaning the surface of the substrate frame module of the photoetching machine by using clear water again;
s105, soaking in cleaning fluid for 20-30min, and washing with clear water;
s106, ultrasonically cleaning for 10-20min by using ethanol;
s107, drying the base chassis module in a drying chamber for 10-20min to finish cleaning the base chassis module of the photoetching machine.
2. The method as claimed in claim 1, wherein the method comprises: the preparation method of the rust remover comprises the following steps:
s201, heating ethylene glycol, glycerol, aluminum phosphate, phosphoric acid, aluminum hydroxide and water to 70-80 ℃;
s202, stirring the obtained mixed solution for 10-20min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature;
s203, adding a pH value regulator into the obtained mixed solution, stirring for 8-12min at the rotation speed of 150-160r/min, and regulating the pH value of the mixed solution to 7-9 to obtain the rust remover.
3. The method as claimed in claim 1, wherein the method comprises: in S102, the rotation speed of the spindle of the polishing machine is 100-120r/min, the pressure of the polishing machine on the precision element is 1-1.2bar, and the polishing temperature is 20-30 ℃.
4. The method as claimed in claim 1, wherein the method comprises: in S103, when polishing the substrate holder module of the lithography machine, a polishing agent needs to be added, where the polishing agent is prepared from the following components: pH regulator, polyglycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid LAl 3+ The polishing agent comprises the following raw materials in parts by weight: 10-20 parts of pH value regulator, 10-15 parts of polyethylene glycol, 5-10 parts of phosphoric acid, 10-16 parts of silicon dioxide polishing powder, 6-9 parts of sodium dodecyl benzene sulfonate, 3-6 parts of sulfuric acid and LAl 3+ 5-8 parts of coupling agent, 6-8 parts of coupling agent and 10-20 parts of water.
5. The method as claimed in claim 4, wherein the cleaning step comprises: the preparation method of the polishing agent comprises the following steps:
s301, mixing polyethylene glycol, phosphoric acid, silicon dioxide polishing powder, sodium dodecyl benzene sulfonate, sulfuric acid and LAl 3+ Heating the coupling agent and water to 60-80 ℃;
s302, stirring the obtained mixed solution for 15-22min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature;
s303, adding a pH value regulator into the obtained mixed solution, stirring for 5-10min at the rotation speed of 150-.
6. The method as claimed in claim 1, wherein the method comprises: in S105, the cleaning solution is prepared from the following components: the cleaning solution comprises potassium permanganate, ethylene glycol monobutyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water, wherein the cleaning solution comprises the following raw materials in parts by weight: 10-15 parts of potassium permanganate, 6-8 parts of ethylene glycol monobutyl ether, 6-9 parts of butynediol, 3-4 parts of hexamethylenetetramine, 10-12 parts of polyvinyl alcohol and 15-20 parts of water.
7. The method as claimed in claim 1, wherein the method comprises: the preparation method of the cleaning solution comprises the following steps:
s401, heating potassium permanganate, ethylene glycol butyl ether, butynediol, hexamethylenetetramine, polyvinyl alcohol and water to 65-75 ℃;
s402, stirring the obtained mixed solution for 15-22min at the rotation speed of 160-180r/min, and cooling the mixed solution to room temperature to obtain the cleaning solution.
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