CN112213800A - Phase control type light deflection device based on micro-nano structure - Google Patents
Phase control type light deflection device based on micro-nano structure Download PDFInfo
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- CN112213800A CN112213800A CN202011214171.6A CN202011214171A CN112213800A CN 112213800 A CN112213800 A CN 112213800A CN 202011214171 A CN202011214171 A CN 202011214171A CN 112213800 A CN112213800 A CN 112213800A
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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Abstract
The invention discloses a micro-nano structure-based phase control type light deflection device, which sequentially comprises a pattern layer, a middle supporting layer and a substrate layer from top to bottom; the pattern layer is a square column with a square through hole in the center, each square column of the square hole forms a small unit, and 8 small units are arranged side by side in the one-dimensional direction to form a light deflection basic unit; the distances between the centers of the adjacent small units are equal, and the period P of the small unit is 0.11-0.14 mu m; the heights of all the square columns are consistent, and h1 is 0.15-0.25 mu m; the length and width of the square column are the same, and the L1 is 0.055-0.12 mu m; the length and width of the square hole are the same, and L2 is 0.014-0.08 μm; the adjacent small units have different sizes and have a transmission phase difference of 45 degrees, the transmission phase difference between the first small unit and the last small unit is 2 pi, and the light deflection device is formed after array arrangement. The light source can meet the phase gradient change of 0-2 pi, so that the transmitted light is deflected, and the light source has high transmittance; meanwhile, the deflection device is small in size, light in weight and easy to integrate.
Description
Technical Field
The invention relates to the technical field of micro-nano optics, in particular to a micro-nano structure-based phase control type light deflection device.
Background
The light deflecting device deflects the incident light to deflect the transmitted light from the original direction of propagation. The light deflection device has a wide application in life, for example, in the display field, a vehicle-mounted display screen is usually placed in the middle of a seat, light emitted from the display at a large viewing angle enters eyes of a driver, and the visibility of a display picture is poor because a backlight light source of the display is distributed in lambertian distribution and the brightness at the large viewing angle is low. If a light deflection device is added in the display, a part of light is deflected towards the direction of a driver, the driver can see a clearer picture, and the visibility is improved. For example, in a common machine vision field, an imaging optical path and an illumination optical path are separated, and an illumination light source needs to be deflected at a certain angle in order to improve utilization efficiency of illumination.
The structure of the traditional light beam deflection device is generally based on a prism form, utilizes the geometrical optics principle and is calculated by Snell's law. Such as a brightness enhancement film from 3M company and a deflection prism commonly used for optical paths. However, the conventional deflection device has a large volume and weight, and is not in line with the development trend of optical product design. And the light deflection device based on the micro-nano structure can overcome the defects.
With the increasing maturity of micro-nano structure technology, novel optical devices based on micro-nano structures are widely proposed, for example, super surfaces can regulate and control the phase and amplitude of incident electromagnetic waves under a sub-wavelength structure. The phase is an important parameter of the electromagnetic wave, and the focusing, the deflection, the polarization conversion and the like of the light beam can be realized through phase control. The traditional light deflection device is designed based on Snell's law, and the phase control type light deflection device is designed based on generalized Snell's law, namely, a suitable micro-nano structure is designed to have the phase gradient change of 0-2 pi, thereby realizing light deflection. However, the micro-nano structure should have high transmittance under the condition of satisfying the phase gradient change of 0-2 pi, otherwise, the micro-nano structure will cause the waste of light energy. Therefore, the difficulty in designing the phase-controlled light deflecting device is to satisfy both high transmittance and 0-2 π phase gradient change.
Disclosure of Invention
The invention aims to provide a micro-nano structure-based phase control type light deflection device, which can meet the phase gradient change of 0-2 pi, so that the transmitted light is deflected and has higher transmittance; meanwhile, the deflection device is small in size, light in weight and easy to integrate.
In order to achieve the purpose, the invention provides a micro-nano structure-based phase control type light deflection device which sequentially comprises a pattern layer, a middle supporting layer and a substrate layer from top to bottom; depositing a middle supporting layer on the substrate layer, depositing a pattern layer on the middle supporting layer, and manufacturing a pattern by using an electron beam etching technology and a stripping technology;
the pattern layer is a square column with a square through hole in the center, each square column of the square hole forms a small unit, and 8 small units are arranged side by side in the one-dimensional direction to form a light deflection basic unit;
the distances between the centers of the adjacent small units are equal, and the period P of the small unit is 0.11-0.14 μm;
the heights of all the square columns are consistent, indicated by h1 and h1 is 0.15-0.25 μm;
the length and width of the square column are the same, and are represented by L1, and L1 is 0.055-0.12 μm;
the length and width of the square hole are the same, and are represented by L2, and L2 is 0.014-0.08 μm; wherein,
the adjacent small units have different sizes and have a transmission phase difference of 45 degrees, the transmission phase difference between the first small unit and the last small unit is 2 pi, and the light deflection device is formed after array arrangement.
Preferably, the material of the pattern layer is silicon.
Preferably, the material of the middle support layer is silicon dioxide, and the thickness h2 is 0.7-1.1 μm.
Preferably, the material of the substrate layer is glass or PMMA, and the thickness of the substrate layer is 0.2-1 mm.
Preferably, the periods P of the 8 small cells are all equal, P being 0.1325 μm.
Preferably, the depth of each square hole is equal to the height h1 of the square column, the height of all the square columns is equal, and h1 is 0.2 μm.
Preferably, L1 of the plurality of square columns is 0.11 μm, 0.12 μm, 0.055 μm, 0.1 μm, respectively, from left to right.
Preferably, L2 of the square holes are 0.08 μm, 0.063 μm, 0.05 μm, 0.036 μm, 0.035 μm, 0.05 μm, 0.014 μm, 0.079 μm, respectively, from left to right.
Preferably, the thickness h2 of the intermediate support layer is 0.8 μm.
Preferably, the substrate layer has a thickness of 0.2mm and the material is PMMA.
According to the technical scheme, the micro-nano structure is utilized, the square column with the square hole is used, 8 unit structures capable of realizing 0-2 pi phase gradient change are designed by changing the length and the width of the square column and the square hole, and the overall average transmittance can reach 82%. The method has simple design, and the designed deflection device has small volume, light weight and easy integration.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a three-dimensional structure diagram of a small unit of a phase control type light deflection device based on a micro-nano structure, which is provided by the invention;
fig. 2 is a top view of a small unit structure of a micro-nano structure-based phase control type light deflection device according to the present invention;
fig. 3 is a three-dimensional structure diagram of a basic unit of a micro-nano structure-based phase control type light deflection device according to the present invention;
fig. 4 is a top view of a basic unit three-dimensional structure of a micro-nano structure-based phase control type light deflection device according to the present invention;
fig. 5 is a side view of a basic unit three-dimensional structure of a micro-nano structure-based phase control type light deflection device according to the present invention;
fig. 6 is a far-field radiation pattern of a micro-nano structure-based phase control type light deflecting device according to the present invention.
Description of the reference numerals
1-layer of a pattern
2-intermediate support layer
3-base layer
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words "upper, lower, left, right" and the like included in the terms merely represent the orientation of the terms in a conventional use state or are colloquially understood by those skilled in the art, and should not be construed as limiting the terms.
The invention provides a micro-nano structure-based phase control type light deflection device, which sequentially comprises a pattern layer 1, a middle supporting layer 2 and a substrate layer 3 from top to bottom; depositing a middle support layer 2 on the substrate layer 3, depositing a pattern layer 1 on the middle support layer 2, and manufacturing a pattern by using an electron beam etching technology and a stripping technology;
the pattern layer 1 is a square column with a square through hole in the center, each square column of the square hole forms a small unit, and 8 small units are arranged side by side in the one-dimensional direction to form a light deflection basic unit;
the distances between the centers of the adjacent small units are equal, and the period P of the small unit is 0.11-0.14 μm;
the heights of all the square columns are consistent, indicated by h1 and h1 is 0.15-0.25 μm;
the length and width of the square column are the same, and are represented by L1, and L1 is 0.055-0.12 μm;
the length and width of the square hole are the same, and are represented by L2, and L2 is 0.014-0.08 μm; wherein,
the adjacent small units have different sizes and have a transmission phase difference of 45 degrees, the transmission phase difference between the first small unit and the last small unit is 2 pi, and the light deflection device is formed after array arrangement.
The material of the pattern layer 1 is silicon.
The material of the middle support layer 2 is silicon dioxide, and the thickness h2 is 0.7-1.1 μm.
The material of the substrate layer 3 is glass or PMMA, and the thickness of the substrate layer is 0.2-1 mm.
In one specific embodiment, as shown in FIGS. 1 and 2, the periods P of the 8 small cells are all equal, P being 0.1325 μm. The depth of each square hole is equal to the height h1 of the square column, the height of all the square columns is equal, and h1 is 0.2 mu m. The length and width of the square column were the same, and from left to right, the length L1 of the square column was 0.11. mu.m, 0.12. mu.m, 0.055. mu.m, and 0.1. mu.m, respectively. The length and width of the square holes are the same, and the length L2 of the square holes is 0.08 μm, 0.063 μm, 0.05 μm, 0.036 μm, 0.035 μm, 0.05 μm, 0.014 μm and 0.079 μm respectively from left to right.
The material of the pattern layer 1 is silicon. The thickness h2 of the middle support layer 2 was 0.8 μm and the material was silicon dioxide. The thickness of the substrate layer 3 is 0.2mm, and the material is PMMA.
As shown in fig. 3 to 5, 8 small cells constitute a basic cell for light deflection.
After the structure is vertically incident with electromagnetic waves of 525-533nm, the transmission phase difference of adjacent units is 45 DEG in the 1 st to 8 th small units, the phase gradient change of 0-2 pi is realized, and the overall average transmittance reaches 82%. And carrying out array arrangement on the basic unit structures to form the light deflection device provided by the invention. Fig. 6 is a far-field radiation pattern of the light deflecting device, and it can be seen that the light deflecting main direction is 22 °, and the light deflecting function is realized.
The phase-controlled light deflecting device of the present invention can be manufactured by electron beam lithography. Firstly, depositing a silicon dioxide layer on a substrate, then depositing a silicon layer on the silicon dioxide layer, and finally manufacturing a pattern layer by utilizing an electron beam etching technology and a stripping technology.
Through the technical scheme, the micro-nano structure is utilized, the square column with the square hole is used, 8 unit structures capable of realizing 0-2 pi phase gradient change are designed by changing the length and the width of the square column and the square hole, and the integral average transmittance can reach 82%. The method has simple design, and the designed deflection device has small volume, light weight and easy integration.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A phase control type light deflection device based on a micro-nano structure is characterized by sequentially comprising a pattern layer (1), a middle supporting layer (2) and a substrate layer (3) from top to bottom, wherein the middle supporting layer (2) is deposited on the substrate layer (3), the pattern layer (1) is deposited on the middle supporting layer (2), and patterns are manufactured by using an electron beam etching technology and a stripping technology;
the pattern layer (1) is a square column with a square through hole in the center, each square column of the square hole forms a small unit, and 8 small units are arranged side by side in the one-dimensional direction to form a light deflection basic unit;
the distances between the centers of the adjacent small units are equal, and the period P of the small unit is 0.11-0.14 μm;
the heights of all the square columns are consistent, indicated by h1 and h1 is 0.15-0.25 μm;
the length and width of the square column are the same, and are represented by L1, and L1 is 0.055-0.12 μm;
the length and width of the square hole are the same, and are represented by L2, and L2 is 0.014-0.08 μm; wherein,
the adjacent small units have different sizes and have a transmission phase difference of 45 degrees, the transmission phase difference between the first small unit and the last small unit is 2 pi, and the light deflection device is formed after array arrangement.
2. The micro-nano structure-based phase control type light ray deflection device according to claim 1, wherein the material of the pattern layer (1) is silicon.
3. The micro-nano structure-based phase control type light ray deflection device according to claim 1, wherein the material of the middle support layer (2) is silicon dioxide, and the thickness h2 is 0.7-1.1 μm.
4. The micro-nano structure-based phase control type light ray deflection device according to claim 1, wherein the base layer (3) is made of glass or PMMA with a thickness of 0.2-1 mm.
5. The micro-nano structure-based phase control type light ray deflection device according to claim 1, wherein the periods P of 8 small units are all equal, and P is 0.1325 μm.
6. The micro-nano structure-based phase-control type light ray deflection device according to claim 5, wherein the depth of each square hole is equal to the height h1 of the square column, the heights of all the square columns are equal, and h1 is 0.2 μm.
7. The micro-nano structure-based phase control type light ray deflection device according to claim 6, wherein the L1 of the plurality of square columns is 0.11 μm, 0.12 μm, 0.055 μm, 0.1 μm from left to right, respectively.
8. The micro-nano structure-based phase control type light ray deflection device according to claim 7, wherein the L2 of the square holes are 0.08 μm, 0.063 μm, 0.05 μm, 0.036 μm, 0.035 μm, 0.05 μm, 0.014 μm, 0.079 μm respectively from left to right.
9. The micro-nano structure-based phase control type light ray deflection device according to claim 8, wherein the thickness h2 of the middle support layer (2) is 0.8 μm.
10. The micro-nano structure-based phase control type light ray deflection device according to claim 9, wherein the thickness of the substrate layer (3) is 0.2mm, and the material is PMMA.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007116639A1 (en) * | 2006-03-23 | 2007-10-18 | National Institute Of Information And Communications Technology | Imageing element and display |
| CN106054287A (en) * | 2016-08-03 | 2016-10-26 | 哈尔滨工业大学深圳研究生院 | Optical device structure unit of visible light wave band transform and optical device |
| CN107831607A (en) * | 2017-12-15 | 2018-03-23 | 中国科学院光电技术研究所 | Phase-change material-based adjustable broadband polarization conversion and dynamic geometric phase modulation device |
| CN108445562A (en) * | 2018-03-23 | 2018-08-24 | 西北工业大学 | A kind of transmission-type plane optical splitter based on micro-nano structure array |
| CN109164536A (en) * | 2018-09-06 | 2019-01-08 | 武汉大学 | Intelligent optical power distribution devices based on super surfacing |
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- 2020-11-04 CN CN202011214171.6A patent/CN112213800B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007116639A1 (en) * | 2006-03-23 | 2007-10-18 | National Institute Of Information And Communications Technology | Imageing element and display |
| CN106054287A (en) * | 2016-08-03 | 2016-10-26 | 哈尔滨工业大学深圳研究生院 | Optical device structure unit of visible light wave band transform and optical device |
| CN107831607A (en) * | 2017-12-15 | 2018-03-23 | 中国科学院光电技术研究所 | Phase-change material-based adjustable broadband polarization conversion and dynamic geometric phase modulation device |
| CN108445562A (en) * | 2018-03-23 | 2018-08-24 | 西北工业大学 | A kind of transmission-type plane optical splitter based on micro-nano structure array |
| CN109164536A (en) * | 2018-09-06 | 2019-01-08 | 武汉大学 | Intelligent optical power distribution devices based on super surfacing |
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