CN112201733A - GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method - Google Patents

GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method Download PDF

Info

Publication number
CN112201733A
CN112201733A CN202011087950.4A CN202011087950A CN112201733A CN 112201733 A CN112201733 A CN 112201733A CN 202011087950 A CN202011087950 A CN 202011087950A CN 112201733 A CN112201733 A CN 112201733A
Authority
CN
China
Prior art keywords
layer
ito
reaction chamber
gan
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011087950.4A
Other languages
Chinese (zh)
Inventor
许晟瑞
黄钰智
冯兰胜
范晓萌
张雅超
张进成
朱卫东
郝跃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN202011087950.4A priority Critical patent/CN112201733A/en
Publication of CN112201733A publication Critical patent/CN112201733A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses a GaN-based light emitting diode based on a self-assembly submicron ITO/Sc/ITO current expansion layer structure and a preparation method thereof, and mainly solves the problems of photon reflection loss and uneven current expansion of the existing LED current expansion layer. It includes from bottom to top: 4H-SiC or sapphire substrate, high-temperature AlN nucleation layer, n-type GaN layer, InxGa1‑xN/GaN multiple quantum well, AlGaN electron barrier layer, p-type layer, current expansion layer and electrode, wherein: the current spreading layer adopts an ITO/Sc/ITO three-layer structure of a self-assembled submicron pattern, namelyThe surface layer and the bottom layer are both indium tin oxide ITO, and the middle layer is Sc. The invention optimizes the current distribution in the current expansion layer, improves the light output path, reduces the loss of light in reflection, improves the light output efficiency of the light-emitting diode, and can be used for manufacturing high-efficiency GaN-based light-emitting equipment.

Description

GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a GaN-based light emitting diode which can be used for manufacturing light emitting equipment with high light output rate.
Technical Field
Because the GaN material is a direct band gap semiconductor, the four-element materials of AlGaN, InGaN and the like become important materials for preparing the light-emitting diode with ultraviolet, deep ultraviolet and visible light wave bands. Can be widely used in the fields of illumination, water purification and sterilization, biological agent detection, medicine and the like.
The light output efficiency of the GaN-based light emitting diode is an important factor influencing the light emission of the diode, and one of the main methods for improving the light output efficiency is to improve the transparency and the roughness of the current expansion layer of the LED, so that photons are difficult to absorb and generate mirror reflection in the output process. Therefore, how to improve the transparency and roughness of the LED surface in the GaN-based LED is an important issue in the field of optoelectronic devices.
A typical gallium nitride-based diode includes a substrate, a nucleation layer, an n-type region, a multi-quantum well active region, an electron blocking layer, a p-type region, a current spreading layer, and metal electrodes, as shown in fig. 1. The current spreading layer is a single-layer Indium Tin Oxide (ITO), but the current spreading layer needs to be subjected to surface roughening treatment and has a limited current spreading effect, so that the light emitting efficiency of the light emitting diode is relatively low.
Disclosure of Invention
The invention aims to overcome the defects of a current expansion layer of a traditional light-emitting diode, and provides a GaN-based light-emitting diode based on a self-assembly submicron ITO/Sc/ITO current expansion layer and a preparation method thereof, which avoid roughening treatment on a device, improve the surface roughness and the current expansion effect of the device, and improve the light output efficiency.
The technical scheme for realizing the purpose of the invention is as follows
1. A GaN-based light emitting diode based on a self-assembled submicron ITO/Sc/ITO current spreading layer structure comprises from bottom to top: substrate, high-temperature AlN nucleating layer, n-type GaN layer and InxGa1-xN/GaN multiple quantum well, AlGaN electron barrier layer, p-type layer, current expanding layer and electrode, its characterized in that: the current expansion layer adopts a self-assembly submicron graph ITO/Sc/ITO three-layer structure, namely the first layer is indium tin oxide ITO with the thickness of 20-50nm, the second layer is metal scandium with the thickness of 5-20nm, and the third layer is indium tin oxide ITO with the thickness of 100-200nm, so that the current expansion capability is enhanced, the roughness of the ITO surface is increased, and the light output efficiency of the light-emitting diode is improved.
Further, the substrate is a 4H-SiC or sapphire substrate; the thickness of the high-temperature AlN nucleating layer is 20-50 nm; the thickness of the n-type GaN layer is 2000-3500 nm; the Al isyGa1-yThe thickness of the N electron blocking layer is 30nm, and the adjustment range of y is 0.2-0.5.
Further, said InxGa1-xN/GaN multiple quantum well with 5 cycles of single In layerxGa1-xThe thicknesses of the N well layer and the GaN barrier layer are respectively 10-30nm and 40-60nm, and the adjustment range of the In content x is 0.01-0.2.
2. A preparation method of a GaN-based light emitting diode based on an ITO/Sc/ITO current expansion layer is characterized by comprising the following steps:
1) heating and high-temperature nitriding pretreatment of the substrate:
2) growing a high-temperature AlN nucleating layer with the thickness of 20-50nm on the nitrided substrate by adopting an MOCVD process;
3) growing an n-type GaN layer with the thickness of 2000-3500nm on the AlN nucleating layer by adopting an MOCVD process;
4) growing five to eight periods on the n-type GaN layer by adopting the MOCVD processIn (2) ofxGa1-xN/GaN quantum well, single layer of In per periodxGa1-xThe thicknesses of the N well layer and the GaN barrier layer are respectively 10-30nm and 40-60nm, and the adjustment range of the In content is 0.01-0.2;
5) growing Al with the thickness of 30nm on the n-type GaN layer by adopting the MOCVD processyGa1-yThe adjustment range of y is 0.2-0.5;
6) in AlyGa1-yGrowing a p-type GaN layer with the thickness of 50-400nm on the N electronic barrier layer by adopting an MOCVD process, and annealing for 5-12 min;
7) depositing an ITO film with the thickness of 20-50nm on the p-type GaN layer by adopting an electron beam evaporation method, growing a Sc metal film with the thickness of 5-20nm on the ITO film by using magnetron sputtering metal, and growing an ITO film with the thickness of 100-200nm on the Sc metal film by using electron beam evaporation to form a current expansion layer structure with three layers of ITO/Sc/ITO;
8) and annealing the sample piece after the ITO/Sc/ITO current expansion layer is grown in an oxygen atmosphere at 600 ℃ for 5-12min, depositing an n-type electrode on the n-type GaN layer and a p-type electrode on the current expansion layer respectively by adopting a metal sputtering method, and finishing the manufacture of the light-emitting diode.
Because the current expansion layer adopts an ITO/Sc/ITO three-layer structure, compared with the traditional LED, the current expansion layer has the following characteristics:
1. the resistivity of Indium Tin Oxide (ITO) is improved, the effect of current expansion is achieved, the current distribution is more uniform, and the luminous efficiency of the device is improved.
2. The surface structure of the indium tin oxide ITO on the outer layer is changed, the surface roughness of the indium tin oxide ITO is increased, the total reflection loss of photons in the process of emitting the photons out of the device is reduced, the light output efficiency is improved, and the light emitting efficiency of the device is further improved.
Drawings
FIG. 1 is a conventional gallium nitride based diode;
FIG. 2 is a block diagram of a device of the present invention;
FIG. 3 is a schematic flow chart of the device manufacturing process of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 2, the device structure of the present invention includes: 4H-SiC or sapphire substrate layer 1, high-temperature AlN nucleation layer 2, n-type GaN layer 3 and InxGa1-xAn N/GaN multi-quantum well layer 4, an AlGaN electron barrier layer 5, a p-type layer 6, a current expansion layer 7 and an electrode 8. Wherein the high-temperature AlN nucleating layer 2 is positioned on the substrate layer 1, the thickness of the high-temperature AlN nucleating layer is 20-50nm, and the substrate 1 is made of 4H-SiC or sapphire material; the n-type GaN layer 3 is positioned on the high-temperature AlN nucleating layer 2, and the thickness of the n-type GaN layer is 2000-3500 nm; said InxGa1-xThe N/GaN multi-quantum well structure 4 is located on the N-type GaN layer 3, and has five to eight periods, namely quantum well InxGa1-xN layers and barrier GaN layers are alternately grown, each InxGa1-xThe N layer and the GaN layer thereon are combined into a period, and each InxGa1-xThe thickness of the N layer is 10-30nm, and the thickness of each GaN layer is 40-60 nm; the AlGaN electron blocking layer 5 is positioned InxGa1-xThe thickness of the N/GaN multi-quantum well 4 is 30 nm; the p-type layer 6 is positioned on the AlGaN electron blocking layer 5; the current extension layer 7 is positioned on the p-type layer 6 and adopts an ITO/Sc/ITO three-layer structure, namely, the first layer is indium tin oxide ITO with the thickness of 20-50nm, the second layer is metal scandium with the thickness of 5-20nm, the third layer is indium tin oxide ITO with the thickness of 100-200nm, and LED devices with different resistivity and surface roughness can be prepared by changing the thickness of the three-layer structure; the electrodes 8 include an n-type electrode on the n-type GaN layer 3 and a p-type electrode on the current spreading layer 7.
Referring to fig. 3, the present invention provides three examples of preparing ITO/Sc/ITO current spreading layer GaN-based light emitting diodes based on self-assembled submicron pattern structures.
Example 1a light emitting diode with a substrate of 4H-Sic and a ITO/Sc/ITO current spreading layer thickness of 20nm/5nm/120nm was prepared.
Step one, preprocessing a 4H-SiC substrate.
1a) Cleaning 4H-SiC substrate, and placing in vacuum degree of 3 × 10-2Torr in a MOCVD reaction chamber; introducing hydrogen into the reaction chamber, keeping the pressure of the MOCVD reaction chamber at 30Torr, and continuing for 10min to finish the heat treatment of the substrate;
1b) and (3) placing the substrate after the heat treatment in a reaction chamber with the temperature of 1020 ℃, introducing ammonia gas with the flow of 3200sccm for nitriding, and keeping for 3min to finish nitriding.
And secondly, growing a high-temperature AlN layer by using an MOCVD process, as shown in a figure 3 (a).
Setting the temperature of the reaction chamber at 950 ℃, simultaneously introducing ammonia gas with the flow rate of 3000sccm and an aluminum source with the flow rate of 40sccm, and growing a high-temperature AlN nucleating layer with the thickness of 20nm on the nitrided substrate.
And step three, growing an n-type GaN layer by adopting an MOCVD process, as shown in a figure 3 (b).
And (3) maintaining the temperature of the reaction chamber at 950 ℃ on the AlN nucleating layer, simultaneously introducing three gases of ammonia gas with the flow rate of 2300sccm, a gallium source with the flow rate of 160sccm and a silicon source with the flow rate of 20sccm, and growing an n-type GaN layer with the thickness of 2500nm under the condition of maintaining the pressure of 20 Torr.
Step four, growing In by using MOCVD process0.1Ga0.9N/GaN multiple quantum well structure, as shown in FIG. 3 (c).
In was alternately grown on the n-type GaN layer for five periods under conditions In which the temperature of the reaction chamber was set to 950 ℃ and the pressure was maintained at 20Torr0.1Ga0.9N/GaN quantum well, single layer of In per period0.1Ga0.9The thicknesses of the N well layer and the GaN barrier layer are 20nm and 40nm respectively, and In is grown0.1Ga0.9Simultaneously introducing three gases of a gallium source with the flow rate of 80sccm, an indium source with the flow rate of 120sccm and a nitrogen source with the flow rate of 3000sccm when the N well layer is formed; and simultaneously introducing two gases of a gallium source with the flow rate of 180sccm and a nitrogen source with the flow rate of 3000sccm when the GaN barrier layer grows.
Step five, growing Al on the multiple quantum wells by adopting the MOCVD process0.3Ga0.7N electron blocking layer, as shown in fig. 3 (d).
Setting the temperature of a reaction chamber at 1080 ℃ and the pressure at 20Torr, and simultaneously introducing a nitrogen source with the flow of 1500sccm, a gallium source with the flow of 40sccm and an aluminum source with the flow of 160sccm into the reaction chamber, wherein the reaction chamber is arranged in a multi-quantum wellOvergrowth of 30nm thick Al0.3Ga0.7An N electron blocking layer.
Step six, adopting MOCVD process to prepare Al0.3Ga0.7A p-type layer is grown on the N-electron blocking layer as in fig. 3 (e).
Setting the temperature of the reaction chamber at 950 deg.C, maintaining the pressure at 20Torr, and introducing ammonia gas with a flow of 2500sccm, a magnesium source with a flow of 300sccm, and a gallium source with a flow of 160sccm into Al0.3Ga0.7Growing a GaN p-type layer with the thickness of 200nm above the N electron blocking layer, maintaining the temperature of the MOCVD reaction chamber at 1000 ℃ after the growth is finished, and maintaining the temperature at H2Annealing for 9min under the atmosphere;
and step seven, growing a current expansion layer of the self-assembly submicron graph ITO/Sc/ITO three-layer structure, as shown in figure 3 (f).
7a) Depositing a layer of Indium Tin Oxide (ITO) with the thickness of 20nm on the p-type GaN by adopting an electron beam evaporation process, sputtering a layer of Sc with the thickness of 5nm on the bottom layer of Indium Tin Oxide (ITO) by adopting a magnetron sputtering method, and annealing for 7 minutes at the temperature of 400 ℃ in a nitrogen atmosphere;
7b) growing a layer of indium tin oxide ITO with the thickness of 120nm on the Sc by adopting an electron beam evaporation process;
the purities of the target materials used by the indium tin oxide ITO and Sc grown on the P-type layer are both 99.999%.
Step eight, sputtering the electrode, as shown in FIG. 3(g)
8a) Sputtering an n-type electrode on the n-type GaN;
8b) sputtering a P-type electrode on the indium tin oxide ITO on the surface layer;
8c) and (3) rapidly carrying out thermal annealing for three minutes at the temperature of 600 ℃ in a nitrogen-oxygen atmosphere to finish the manufacture of the light-emitting diode.
Example 2 a light emitting diode was prepared with a sapphire substrate and an ITO/Sc/ITO current spreading layer thickness of 30nm/10nm/150 nm.
Step 1, heat treatment is carried out on the sapphire substrate.
1.1) after the sapphire substrate was cleaned, it was placed in an MOCVD reaction chamber to reduce the degree of vacuum of the reaction chamber to 3X 10- 2Torr; introducing hydrogen into the reaction chamber, and allowing the pressure in the MOCVD reaction chamber to reachHeating the substrate to 1200 ℃ under the condition of 760Torr, and keeping the temperature for 4min to finish the heat treatment of the substrate;
1.2) placing the substrate after heat treatment in a reaction chamber with the temperature of 1300 ℃, introducing ammonia gas with the flow of 2500sccm, and nitriding for 5min to finish nitriding.
And 2, growing a high-temperature AlN layer by using an MOCVD process, as shown in a figure 3 (a).
Setting the temperature of the reaction chamber at 1300 ℃, simultaneously introducing ammonia gas with the flow rate of 4000sccm and an aluminum source with the flow rate of 20sccm, and growing a high-temperature AlN nucleating layer with the thickness of 50nm on the nitrided substrate.
And 3, growing an n-type GaN layer by adopting an MOCVD process, as shown in a figure 3 (b).
Setting the temperature of the reaction chamber at 1300 ℃, keeping the pressure at 60Torr, simultaneously introducing ammonia gas with the flow of 2900sccm, a gallium source with the flow of 180sccm and a silicon source with the flow of 20sccm, and growing an n-type GaN layer with the thickness of 2000nm on the AlN nucleating layer.
Step 4, growing In on the n-type GaN layer by adopting MOCVD process0.15Ga0.85N/GaN multiple quantum well structure, as shown in FIG. 3 (c).
4.1) setting the temperature of the reaction chamber at 1300 ℃ and the pressure at 20 Torr;
4.2) growth of 20nm In0.15Ga0.85When the N well layer is formed, a gallium source with the flow rate of 65sccm, an indium source with the flow rate of 150sccm and ammonia gas with the flow rate of 900sccm are introduced at the same time;
4.3) In0.15Ga0.85When a GaN barrier layer with the thickness of 50nm grows on the N well layer, a gallium source with the flow rate of 130sccm and ammonia gas with the flow rate of 900sccm are introduced, and each well layer and each barrier layer form an In layer of one period0.15Ga0.85N/GaN quantum well, and growing for 5 periods in the method.
Step 5, growing Al by using MOCVD process0.4Ga0.6N electron blocking layer, as shown in fig. 3 (d).
Setting the temperature of a reaction chamber at 1000 ℃, keeping the pressure at 40Torr, introducing a nitrogen source with the flow of 1000sccm, a gallium source with the flow of 60sccm and an aluminum source with the flow of 140sccm in the growth process, and growing on a multi-quantum well30nm thick Al0.4Ga0.6And N layers.
Step 6, in Al0.4Ga0.6A p-type GaN layer is grown on the N-electron blocking layer using an MOCVD process, as shown in fig. 3 (e).
6.1) setting the temperature of the reaction chamber to be 1000 ℃ and the pressure to be 20Torr, simultaneously introducing ammonia gas with the flow of 2700sccm, Ga source with the flow of 180sccm and magnesium source with the flow of 180sccm, growing a GaN p-type layer with the thickness of 200nm on the electron blocking layer, and then maintaining the temperature of the MOCVD reaction chamber to be 1250 ℃, and annealing for 5min in the H2 atmosphere.
And 7, growing an ITO/Sc/ITO current expansion layer with a self-assembled submicron graph structure, as shown in a figure 3 (f).
7.1) depositing indium tin oxide ITO with a bottom layer of 30nm on the p-type GaN layer by adopting an electron beam evaporation process;
7.2) sputtering a Sc metal layer with the thickness of 10nm on the bottom layer indium tin oxide ITO by adopting a metal sputtering process, and annealing for 3 minutes at 600 ℃ in a nitrogen atmosphere;
7.3) growing indium tin oxide ITO with the surface layer of 150nm on Sc by adopting electron beam evaporation, wherein the purities of the indium tin oxide ITO and Sc target materials grown on the p-type GaN are both 99.999%.
Step 8, sputtering the electrode, as shown in FIG. 3 (g).
8.1) sputtering an n-type pole on the n-type GaN layer;
8.2) sputtering a P-type electrode on the indium tin oxide ITO on the surface layer;
8.3) carrying out rapid thermal annealing for 3 minutes at the temperature of 600 ℃ in a nitrogen-oxygen atmosphere to finish the manufacture of the LED device.
Example 3 a light emitting diode with a substrate of 4H-Sic and a ITO/Sc/ITO current spreading layer thickness of 40nm/20nm/160nm was prepared.
And step A, preprocessing the 4H-SiC substrate.
After cleaning the 4H-SiC substrate, the vacuum degree of the MOCVD reaction chamber is reduced to 2 x 10-2Torr; introducing hydrogen into the reaction chamber, heating the substrate to 1000 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 400Torr, and keeping the temperature for 8min to finish the heat treatment of the substrate; then the substrate after heat treatment is placed at the temperature of 1080Ammonia gas with the flow of 3500sccm is introduced into the reaction chamber at the temperature of 4min for nitridation.
And step B, growing a high-temperature AlN layer by using an MOCVD process, as shown in a figure 3 (a).
Setting the temperature of the reaction chamber at 3000 ℃, simultaneously introducing ammonia gas with the flow rate of 3300sccm and an aluminum source with the flow rate of 40sccm, and growing a high-temperature AlN nucleating layer with the thickness of 30nm on the nitrided substrate.
And step C, growing the n-type GaN layer by adopting an MOCVD process, as shown in a figure 3 (b).
Setting the temperature of the reaction chamber to 1600 ℃, keeping the pressure at 40Torr, and simultaneously introducing 2900sccm ammonia gas, 160sccm gallium source and 15sccm silicon source, and growing an n-type GaN layer with the thickness of 3400nm on the AlN nucleating layer.
Step D, growing In on the n-type GaN layer by adopting MOCVD process0.08Ga0.92N/GaN multiple quantum well structure, as shown in FIG. 3 (c).
D1) Introducing ammonia gas with the flow rate of 3000sccm under the conditions that the temperature of the reaction chamber is 1100 ℃ and the pressure is 40 Torr;
D2) keeping the flow of ammonia gas unchanged, simultaneously introducing a gallium source with the flow of 72sccm and an indium source with the flow of 160sccm into the reaction chamber, and growing a layer of In with the thickness of 30nm on the n-type GaN layer0.08Ga0.92An N well layer;
D3) keeping the flow of ammonia gas constant, introducing a gallium source with the flow of 120sccm into the reaction chamber, In0.08Ga0.92A GaN barrier layer with the thickness of 60nm grows on the N well layer;
D4) d2) and D3) were repeated so that each well layer and the barrier layer thereon make up one cycle, and quantum wells that were five cycles long were formed.
Step E, growing Al by MOCVD process0.35Ga0.65N electron blocking layer, as shown in fig. 3 (d).
Setting the temperature of the reaction chamber at 900 ℃, the pressure at 60Torr, and simultaneously introducing a nitrogen source with the flow of 1000sccm, a gallium source with the flow of 40sccm and an aluminum source with the flow of 180sccm into the reaction chamber0.08Ga0.92Growing Al with the thickness of 30nm on the N/GaN multi-quantum well0.35Ga0.65And N layers.
Step F, at Al0.35Ga0.65A p-type layer is grown over the N-electron blocking layer using an MOCVD process, as shown in fig. 3 (e).
F1) Introducing ammonia gas with the flow rate of 2800sccm, a gallium source with the flow rate of 170sccm and a magnesium source with the flow rate of 250sccm simultaneously under the conditions that the temperature of a reaction chamber is 1100 ℃ and the pressure is 40Torr, and growing a p-type GaN layer with the thickness of 250 nm;
F2) the chamber temperature was maintained under an atmosphere of H2, and annealing was performed.
And G, growing an ITO/Sc/ITO current expansion layer with a self-assembled submicron graph structure, as shown in a figure 3 (f).
G1) Growing a bottom layer Indium Tin Oxide (ITO) with the thickness of 40nm on the p-type GaN layer by adopting electron beam evaporation, wherein the purity of the ITO target material is 99.999 percent;
G2) sputtering a Sc metal layer with the thickness of 20nm on the bottom layer indium tin oxide ITO by using an evaporation metal method, wherein the purity of the Sc target material is 99.999%, and annealing for 6 minutes at the temperature of 500 ℃ in a nitrogen atmosphere;
G3) and growing indium tin oxide ITO with a surface layer of 160nm on Sc by adopting electron beam evaporation, wherein the purity of the indium tin oxide ITO target is 99.999%.
And step H, sputtering an electrode.
H1) Depositing an n-type electrode on the n-type GaN layer by adopting a metal sputtering process;
H2) sputtering a p-type electrode on the indium tin oxide ITO on the surface layer by adopting a metal sputtering process;
H3) and (4) rapidly carrying out thermal annealing for four minutes at the temperature of 600 ℃ in a nitrogen-oxygen atmosphere to finish the manufacture of the LED device.
The foregoing description is only three specific examples of the present invention and should not be construed as limiting the invention in any way, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the invention, but these modifications and variations will still fall within the scope of the appended claims.

Claims (10)

1. A GaN-based light emitting diode based on a self-assembled submicron ITO/Sc/ITO current spreading layer structure comprises from bottom to top: a substrate (1), a high-temperature AlN nucleating layer (2), an n-type GaN layer (3), InxGa1-xN/GaN multiple quantum well (4), AlGaN electron barrier layer (5), p-type layer (6), current extension layer (7) and electrode (8), its characterized in that: the current spreading layer (7) adopts a self-assembly submicron graph ITO/Sc/ITO three-layer structure, namely a first layer is indium tin oxide ITO with the thickness of 20-50nm, a second layer is metal scandium with the thickness of 5-20nm, and a third layer is indium tin oxide ITO with the thickness of 100-200nm, so that the current spreading capacity is enhanced, the roughness of the surface of the ITO is increased, and the light output efficiency of the light-emitting diode is improved.
2. The led of claim 1, wherein:
the substrate (1) adopts a 4H-SiC or sapphire substrate;
the thickness of the high-temperature AlN nucleating layer (2) is 20-50 nm;
the thickness of the n-type GaN layer (3) is 2000-3500 nm;
the Al isyGa1-yThe thickness of the N electron blocking layer (5) is 30nm, and the adjustment range of y is 0.2-0.5.
3. The light-emitting diode of claim 1, wherein: said InxGa1-xN/GaN multiple quantum well (4) with 5 cycles of single In layer per cyclexGa1-xThe thicknesses of the N well layer and the GaN barrier layer are respectively 10-30nm and 40-60nm, and the adjustment range of the In content x is 0.01-0.2.
4. A preparation method of a GaN-based light emitting diode based on an ITO/Sc/ITO current expansion layer is characterized by comprising the following steps:
1) heating and high-temperature nitriding pretreatment of the substrate:
2) growing a high-temperature AlN nucleating layer with the thickness of 20-50nm on the nitrided substrate by adopting an MOCVD process;
3) growing an n-type GaN layer with the thickness of 2000-3500nm on the AlN nucleating layer by adopting an MOCVD process;
4) growing five to eight periods of In on the n-type GaN layer by MOCVD processxGa1-xN/GaN quantum well, single layer of In per periodxGa1-xThe thicknesses of the N well layer and the GaN barrier layer are respectively 10-30nm and 40-60nm, and the adjustment range of the In content is 0.01-0.2;
5) growing Al with the thickness of 30nm on the n-type GaN layer by adopting the MOCVD processyGa1-yThe adjustment range of y is 0.2-0.5;
6) in AlyGa1-yGrowing a p-type GaN layer with the thickness of 50-400nm on the N electronic barrier layer by adopting an MOCVD process, and annealing for 5-12 min;
7) depositing an ITO film with the thickness of 20-50nm on the p-type GaN layer by adopting an electron beam evaporation method, growing a Sc metal film with the thickness of 5-20nm on the ITO film by using magnetron sputtering metal, and growing an ITO film with the thickness of 100-200nm on the Sc metal film by using electron beam evaporation to form a current expansion layer structure with three layers of ITO/Sc/ITO;
8) and annealing the sample piece after the ITO/Sc/ITO current expansion layer is grown in an oxygen atmosphere at 600 ℃ for 5-12min, depositing an n-type electrode on the n-type GaN layer and a p-type electrode on the current expansion layer respectively by adopting a metal sputtering method, and finishing the manufacture of the light-emitting diode.
5. The method as claimed in claim 4, wherein the MOCVD process adopted in 2) is to set the following condition parameters for the reaction chamber:
the temperature of the reaction chamber is 950 ℃ and 1300 ℃,
the pressure in the reaction chamber is kept at 20-400Torr,
introducing ammonia gas with the flow rate of 3000-4000sccm and an aluminum source with the flow rate of 20-40sccm into the reaction chamber at the same time.
6. The method as claimed in claim 4, wherein the MOCVD process adopted in 3) is to set the following condition parameters for the reaction chamber:
the temperature of the reaction chamber is 950 ℃ and 1500 ℃,
the pressure in the reaction chamber is kept at 20-60Torr,
and simultaneously introducing three gases, namely ammonia gas with the flow rate of 2500 plus 3000sccm, a gallium source with the flow rate of 150 plus 180sccm and a silicon source with the flow rate of 10-20sccm into the reaction chamber.
7. The method as claimed in claim 4, wherein the MOCVD process adopted in 4) is to set the following condition parameters for the reaction chamber:
the temperature of the reaction chamber is 950 ℃ and 1100 ℃,
the pressure in the reaction chamber is kept at 20-60Torr,
three gases, namely a nitrogen source with the flow rate of 1000-3000sccm, a gallium source with the flow rate of 40-180sccm and an indium source with the flow rate of 120-200sccm, are simultaneously introduced into the reaction chamber.
8. The method as claimed in claim 4, wherein MOCVD process adopted in 5) is to set the following condition parameters for the reaction chamber:
the temperature of the reaction chamber is 900-1100 ℃,
the pressure in the reaction chamber is kept at 20-60Torr,
three gases, namely a nitrogen source with the flow rate of 1000-1500sccm, a gallium source with the flow rate of 40-80sccm and an aluminum source with the flow rate of 160-220sccm, are simultaneously introduced into the reaction chamber.
9. The method as claimed in claim 4, wherein the MOCVD process adopted in step 6) is to set the following condition parameters for the reaction chamber:
the temperature of the reaction chamber is 950 ℃ and 1100 ℃,
the pressure in the reaction chamber is kept at 20-60Torr,
three gases, namely ammonia gas with the flow rate of 2500-.
10. The method according to claim 4, wherein the electron beam evaporation process and the magnetron sputtering process adopted in step 7) are set with the following parameters:
the purity of the ITO target material is 99.999 percent,
the purity of the Sc target material is 99.999 percent,
the pressure of the reaction chamber during the electron beam evaporation and magnetron sputtering process was maintained at 1-5 Torr.
CN202011087950.4A 2020-10-13 2020-10-13 GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method Pending CN112201733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011087950.4A CN112201733A (en) 2020-10-13 2020-10-13 GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011087950.4A CN112201733A (en) 2020-10-13 2020-10-13 GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method

Publications (1)

Publication Number Publication Date
CN112201733A true CN112201733A (en) 2021-01-08

Family

ID=74008737

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011087950.4A Pending CN112201733A (en) 2020-10-13 2020-10-13 GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method

Country Status (1)

Country Link
CN (1) CN112201733A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677703A (en) * 2004-03-12 2005-10-05 三星电子株式会社 Nitride-based light-emitting device and method of manufacturing the same
US20070284601A1 (en) * 2006-04-26 2007-12-13 Garo Khanarian Light emitting device having improved light extraction efficiency and method of making same
CN102916100A (en) * 2012-11-08 2013-02-06 安徽三安光电有限公司 Light emitting diode and manufacturing method thereof
CN103579436A (en) * 2012-07-18 2014-02-12 广东量晶光电科技有限公司 Semiconductor light emitting structure and manufacturing method thereof
CN105023985A (en) * 2015-07-28 2015-11-04 聚灿光电科技股份有限公司 LED (Light Emitting Diode) chip and preparation method thereof
CN106935668A (en) * 2015-12-30 2017-07-07 中国建材国际工程集团有限公司 Transparency conducting layer stacking and its manufacture method comprising pattern metal functional layer
CN207233767U (en) * 2017-08-18 2018-04-13 安徽信息工程学院 A kind of new LED transparent electrode
CN208078005U (en) * 2018-02-02 2018-11-09 大连德豪光电科技有限公司 A kind of LED chip improving external quantum efficiency

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677703A (en) * 2004-03-12 2005-10-05 三星电子株式会社 Nitride-based light-emitting device and method of manufacturing the same
US20070284601A1 (en) * 2006-04-26 2007-12-13 Garo Khanarian Light emitting device having improved light extraction efficiency and method of making same
CN103579436A (en) * 2012-07-18 2014-02-12 广东量晶光电科技有限公司 Semiconductor light emitting structure and manufacturing method thereof
CN102916100A (en) * 2012-11-08 2013-02-06 安徽三安光电有限公司 Light emitting diode and manufacturing method thereof
CN105023985A (en) * 2015-07-28 2015-11-04 聚灿光电科技股份有限公司 LED (Light Emitting Diode) chip and preparation method thereof
CN106935668A (en) * 2015-12-30 2017-07-07 中国建材国际工程集团有限公司 Transparency conducting layer stacking and its manufacture method comprising pattern metal functional layer
CN207233767U (en) * 2017-08-18 2018-04-13 安徽信息工程学院 A kind of new LED transparent electrode
CN208078005U (en) * 2018-02-02 2018-11-09 大连德豪光电科技有限公司 A kind of LED chip improving external quantum efficiency

Similar Documents

Publication Publication Date Title
CN108899403B (en) Efficient light-emitting diode based on ScAlN/AlGaN superlattice p-type layer and preparation method
CN110224047B (en) Efficient light-emitting diode based on P-type doped AlScN/AlScN superlattice barrier layer and preparation method
WO2016011810A1 (en) Method for preparing nitride semiconductor
WO2022116945A1 (en) Method for manufacturing deep-ultraviolet led epitaxy with low-resistivity p-type layer
CN109378373B (en) High-efficiency deep ultraviolet light-emitting diode based on h-BN electron blocking layer and preparation method
CN112259654B (en) Ultraviolet LED epitaxial wafer and preparation method and application thereof
CN108682719A (en) A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof
CN110518099A (en) A kind of efficient LED and production method
CN111816739B (en) High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method
CN107394022A (en) Efficient LED and preparation method based on nano thread structure
CN115064620A (en) Efficient deep ultraviolet light-emitting diode with YAlN/AlGaN superlattice p-type layer as step component and preparation method thereof
CN115911207A (en) Deep ultraviolet light emitting diode epitaxial wafer, preparation method thereof and deep ultraviolet LED
CN113471343B (en) GaN green light emitting diode based on ScAlGaN super-polarized n-type layer and preparation method thereof
CN111403568A (en) Ultraviolet L ED epitaxial structure and preparation method thereof
CN113410353B (en) Light emitting diode epitaxial wafer and preparation method thereof
CN112687773A (en) Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof
CN110993752A (en) LED epitaxial growth method taking graphene as buffer layer
CN107331738B (en) Manufacturing method of light-emitting diode epitaxial wafer
CN112201733A (en) GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method
CN110137314B (en) Ultraviolet light-emitting diode based on ferroelectric polarization effect and preparation method thereof
CN113745379B (en) Deep ultraviolet LED epitaxial structure and preparation method thereof
CN111987198A (en) GaN-based transverse structure light-emitting diode based on Fe doping and manufacturing method
CN109545919B (en) High-efficiency ultraviolet light-emitting diode modulated and doped by n-type AlGaN layer and preparation method thereof
CN109585612B (en) The LED epitaxial growth method of improving luminous efficiency
CN112736168A (en) Nonpolar GaN-based micro light-emitting diode and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210108

WD01 Invention patent application deemed withdrawn after publication