CN112201708B - Flexible substrate curled quantum well thin film material and preparation method thereof - Google Patents
Flexible substrate curled quantum well thin film material and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flexible substrate curled quantum well thin film material and a preparation method thereof, wherein the method comprises the following steps: taking a strain film which is subjected to pattern transfer and is plated with an electrode; the strain film includes: the device comprises a GaAs substrate, a sacrificial layer arranged on the GaAs substrate and a layer to be curled, wherein the layer to be curled is arranged on the sacrificial layer; the electrode is arranged on the layer to be curled; taking a binder and a heat conducting fin, and bonding a GaAs substrate and the heat conducting fin through the binder to obtain a sample; spin-coating photoresist on the sample, and then drying, photoetching and developing; coating photoresist on the joint of the GaAs substrate and the heat conducting fin, and drying; corroding and removing part of the sacrificial layer; removing the photoresist by an organic solvent; the sample is washed by the second washing solvent, after which the sample is immersed in a container containing deionized water, and the container is placed on a heating plate and heated to dry the sample. The invention does not need CPD, improves the toughness of the strain film substrate by sticking the heat-conducting sheet and can be used for drying.
Description
Technical Field
The invention relates to the field of quantum well thin film material preparation, in particular to a flexible substrate curled quantum well thin film material and a preparation method thereof.
Background
The curling nano technology is a nano technology which has emerged since 2000, and the technology mainly adopts a peeling process to curl a two-dimensional freely-unfolded nano film into a micron or nano-scale pipe or a fold under the stress of the film. As described in the "three-dimensional tubular quantum well infrared detector preparation and photoelectric characteristic study" of the doctor thesis, the strained thin film includes: GaAs substrate, sacrificial layer, functional layer. When the sacrificial layer is partially removed by etching, the functional layer will relax stress and become curled. The technology is mainly based on the traditional top-down thin film deposition technology and the preparation process, and the coiled micro-nano structure can be very easily integrated on the substrate. The tubular structure prepared by the technology has unique axial symmetry characteristic, can greatly improve the light absorption rate, and is an important method for improving the optical performance of the thin film material.
The flexible device has the advantages of light weight, flexibility, wearability and the like, and is regarded as a bottleneck of breaking through Moore's law in microelectronic technology. The curled quantum well film infrared detector of the flexible substrate prepared by the curled nanotechnology can be better matched with a receiving end light path device of the detector, so that the detection angle is improved, and the infrared detection performance is greatly improved. However, there are two major problems in the fabrication of flexible substrate rolled quantum well thin films:
(1) although the GaAs substrate of the deposited film has certain flexibility after being thinned, the problem that photoetching cannot be continued to protect the electrode exists due to the brittleness of the GaAs substrate, so that the subsequent film curling process cannot be carried out.
(2) When the photoresist on the electrode is removed after the film is curled, if the photoresist is directly removed by organic solution at normal temperature, when the liquid volatilizes, the film roller pipe collapses and is damaged due to the liquid tension, and the organic flexible substrate attached to the thinning sample can be damaged. The traditional method is that the corroded and curled film material is put into a Critical Point Dryer (CPD), soaked for a long time by organic solvent with strong solubility such as ethanol or acetone and then repeatedly cleaned by carbon dioxide liquid. Obviously, this procedure is not applicable for the fabrication of quantum well devices containing organic flexible substrates that are readily soluble in ethanol or acetone. These problems have limited the fabrication and development of quantum well infrared detectors for flexible substrates.
Disclosure of Invention
The invention aims to provide a flexible substrate curled quantum well thin film material and a preparation method thereof aiming at the defects in the prior art.
In order to achieve the purpose, the invention provides a preparation method of a flexible substrate curled quantum well thin film material, which comprises the following steps:
step 1: taking the strain film which is subjected to pattern transfer and is plated with the electrode, soaking the strain film in a first cleaning solvent, and then drying; the strain film includes: the device comprises a GaAs substrate, a sacrificial layer arranged on the GaAs substrate and a layer to be curled, wherein the layer to be curled is arranged on the sacrificial layer; the electrode is arranged on the layer to be curled;
step 2: taking a binder and a heat conducting sheet, and bonding the GaAs substrate and the heat conducting sheet through the binder to obtain a sample comprising the strain film, the binder and the heat conducting sheet;
and step 3: spin-coating photoresist on one surface of the sample containing the electrode, and then drying, photoetching and developing to protect the electrode;
and 4, step 4: coating photoresist on the joint of the GaAs substrate and the heat conducting sheet, and then drying to protect the adhesive;
and 5: corroding and removing part of the sacrificial layer to enable the layer to be curled to generate partial curling;
step 6: removing the photoresist from the sample treated in the step 5 by using an organic solvent;
and 7: cleaning the sample treated in the step 6 by a second cleaning solvent;
and 8: immersing the sample treated in the step 7 into a container filled with deionized water, and placing the container on a heating plate for heating so as to gradually volatilize water; after the liquid level in the container is lower than the curl portion of the sample, the sample is taken out of the container and placed on a heating plate, and the heat conductive sheet is brought into contact with the heating plate to dry the sample.
According to the preparation method of the flexible substrate curled quantum well thin film material, the layer to be curled can generate partial curling after part of the sacrificial layer is removed, and a three-dimensional curled micro-tube is formed.
The preparation method of the flexible substrate curled quantum well thin film material comprises the step of washing the flexible substrate curled quantum well thin film material by using a first washing solvent.
The preparation method of the flexible substrate curled quantum well thin film material is characterized in that the thickness of the GaAs substrate is 30-80 μm.
The preparation method of the flexible substrate curled quantum well thin film material is characterized in that the binder is a polyimide adhesive tape.
The preparation method of the flexible substrate curled quantum well thin film material comprises the step of preparing a flexible substrate curled quantum well thin film material, wherein the heat conducting sheet is a copper sheet.
In the preparation method of the flexible substrate curled quantum well thin film material, in step 6, the organic solvent is acetone solution; the method for removing the photoresist comprises the following steps: and sequentially placing the samples into three containers filled with acetone solution for 3-6 s respectively.
In the preparation method of the flexible substrate curled quantum well thin film material, in step 7, the second cleaning solvent is an alcohol solution; the cleaning method comprises the following steps: and sequentially placing the samples into three containers filled with alcohol solution for 5-10 s respectively.
The preparation method of the flexible substrate curled quantum well thin film material comprises the step of heating the flexible substrate curled quantum well thin film material by using a heating plate, wherein the temperature of the heating plate is 75-95 ℃.
The invention also provides a flexible substrate curled quantum well thin film material, which comprises: the heat-conducting film comprises a strain film, a heat-conducting fin and a bonding agent arranged between the strain film and the heat-conducting fin; the strain film includes: the three-dimensional curved micro-tube comprises a GaAs substrate, a sacrificial layer arranged on the GaAs substrate and a three-dimensional curved micro-tube which is arranged on the sacrificial layer and plated with an electrode; the bonding agent bonds the GaAs substrate and the heat conducting sheet; the three-dimensional curled microtube is provided with a bent part; the bend is formed by stress generated after etching to remove a portion of the sacrificial layer.
The flexible substrate curled quantum well thin film material is characterized in that optionally, the adhesive is a polyimide adhesive tape, and the heat conducting sheet is a copper sheet.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the invention, the toughness of the strain film substrate is effectively improved by sticking the heat-conducting fins on the bottom of the strain film.
(2) The method does not need a critical point dryer, and effectively reduces the time for soaking the strain film in the organic solvent.
(3) The invention utilizes the gradual volatilization mode of the liquid to dry, the tension generated by the volatilization of the liquid is gradually changed on the surface of the film, and the damage of the film surface caused by overlarge stress is avoided.
(4) The invention has simple and convenient process flow operation and high success rate of device preparation.
Drawings
Fig. 1 is a schematic structural diagram of a flexible substrate rolled quantum well thin film material of the present invention.
In the figure: 1-adhesive, 2-heat conducting sheet, 3-GaAs substrate, 4-sacrificial layer, 5-electrode, 6-bending part and 7-three-dimensional curled microtube.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
The invention provides a preparation method of a flexible substrate curled quantum well thin film material, which comprises the following steps:
step 1: taking the strain film which is subjected to pattern transfer and is plated with the electrode 5, soaking the strain film in a first cleaning solvent, and then drying; the strain film includes: the GaAs substrate 3, the sacrificial layer 4 arranged on the GaAs substrate 3, the layer to be curled arranged on the sacrificial layer 4; the electrode 5 is arranged on the layer to be curled;
step 2: taking a binder 1 and a heat conducting fin 2, and bonding a GaAs substrate 3 and the heat conducting fin 2 through the binder 1 to obtain a sample comprising a strain film, the binder 1 and the heat conducting fin 2;
and step 3: spin-coating photoresist on one surface of the sample containing the electrode 5, and then drying, photoetching and developing to protect the electrode 5;
and 4, step 4: coating photoresist on the joint of the GaAs substrate 3 and the heat conducting strip 2, and then drying to protect the adhesive 1;
and 5: corroding and removing part of the sacrificial layer 4 to enable the layer to be curled to generate partial curling;
step 6: removing the photoresist from the sample treated in the step 5 by using an organic solvent;
and 7: cleaning the sample treated in the step 6 by a second cleaning solvent;
and 8: immersing the sample treated in the step 7 into a container filled with deionized water, and placing the container on a heating plate for heating so as to gradually volatilize water; after the liquid level in the container is lower than the curl portion of the sample, the sample is taken out of the container and placed on a heating plate, and the heat conductive sheet 2 is brought into contact with the heating plate to dry the sample.
In some embodiments, the first cleaning solvent may be an acetone solution, and the impurities on the surface of the thin film may be removed by soaking the strained thin film in the acetone solution for 10s to 20 s.
The invention thins the thicker GaAs substrate 3 to 30-80 μm, so that the GaAs substrate is easy to bend.
The adhesive 1 of the invention can be made of flexible substrate materials such as polyimide adhesive tape and the like, and has the advantages of light weight, flexibility and the like.
In some embodiments, the heat conducting sheet 2 may be made of a metal material such as copper, which is ductile and flexible and has good heat conductivity. The bonding agent 1 is adopted to stick the heat conducting sheet 2 to the bottom of the strain film, the bonding agent 1 and the heat conducting sheet 2 with good ductility support the GaAs substrate 3, the toughness of the strain film substrate is enhanced, and the problem that the GaAs substrate 3 cannot be continuously photoetched due to the fact that the brittleness of the GaAs substrate is increased after thinning is solved. In the sample drying process, the adhesive 1 and the heat conducting sheet 2 fix the strain film, so that the film is prevented from being damaged by thermal deformation. Meanwhile, the temperature of the heating plate is transferred to the flexible substrate through the heat conducting fins 2, and the flexible substrate is prevented from being damaged by the high temperature of the heating plate.
The organic solvent is acetone solution, and the photoresist can be removed by sequentially placing the sample into three glass beakers containing the acetone solution for 3-6 s respectively. Meanwhile, the photoresist coated at the joint of the GaAs substrate 3 and the heat conducting strip 2 can effectively delay acetone corrosion of the adhesive 1, so that the adhesive 1 is protected. The process flow of the invention is simple and convenient to operate, and the success rate of the device preparation is high.
The second cleaning solvent of the present invention is an alcohol solution. And sequentially putting the sample into three glass beakers containing alcohol solution for 5-10 s respectively to clean the sample, and then putting the sample into deionized water to dry the reelpipe at the temperature of 75-95 ℃. The invention utilizes the gradual volatilization mode of the liquid to dry, the tension generated by the volatilization of the liquid is gradually changed on the surface of the film, and the damage of the film surface caused by overlarge stress is avoided. According to the invention, a critical point dryer is not needed, so that the time for heating and cooling the instrument is saved, and the time for soaking the sample in the organic solvent is further reduced, thereby protecting the binder 1 from being dissolved.
The invention also provides a flexible substrate curled quantum well thin film material, which comprises: the heat conducting film comprises a strain film, a heat conducting sheet 2 and an adhesive 1 arranged between the strain film and the heat conducting sheet 2; the strain film includes: the device comprises a GaAs substrate 3, a sacrificial layer 4 arranged on the GaAs substrate 3, and a three-dimensional curled micro-tube 7 which is arranged on the sacrificial layer 4 and plated with an electrode 5; the bonding agent 1 bonds the GaAs substrate 3 and the heat conducting sheet 2; the three-dimensional curled microtube 7 is provided with a bent part 6; the bend 6 is formed by a stress generated after etching away a part of the sacrificial layer 4.
The flexible substrate curled quantum well thin film material is prepared by the preparation method of the flexible substrate curled quantum well thin film material.
Example 1:
a preparation method of a flexible substrate curled quantum well thin film material comprises the following steps:
step 1: adopting a thinning machine to transfer the pattern of the GaAs/Al plated with the gold electrode0.26Ga0.74Mechanically reducing the thickness of the GaAs substrate of the As strain film from 500 mu m to 50 mu m, soaking the reduced strain film in an acetone solution for 10s, and then drying;
step 2: using a polyimide adhesive tape as an organic flexible substrate, and adhering the dried strain film to a flat heat dissipation copper sheet to obtain a sample;
and step 3: spin-coating photoresist at 2000rpm, drying at 90 deg.C on a hot plate for 95s, photoetching, and developing;
and 4, step 4: manually coating photoresist on the seam of the GaAs substrate and the copper sheet of the sample by using a needle point under an optical microscope, and then placing the sample on a hot plate at 90 ℃ for 60s for drying;
and 5: placing the sample into 10% hydrofluoric acid solution, soaking for 10 minutes, and corroding part of the sacrificial layer to curl the film;
step 6: quickly taking out the sample, and sequentially putting the sample into three glass beakers filled with acetone for about 3 s;
and 7: sequentially placing the sample into three glass beakers containing alcohol to be respectively soaked for 5 s;
and 8: putting the sample into a culture dish containing deionized water, and putting the culture dish on a heating plate to be heated to 75 ℃; after the liquid level in the culture dish is lower than the curling part of the sample, the sample is taken out from the culture dish and directly placed on a heating plate to quickly volatilize the water on the flexible substrate.
Example 2:
a preparation method of a flexible substrate curled quantum well thin film material comprises the following steps:
step 1: adopting a thinning machine to transfer the pattern of the GaAs/Al plated with the gold electrode0.26Ga0.74Mechanically thinning the GaAs substrate of the As strain film from 500 mu m to 60 mu m, soaking the thinned strain film in an acetone solution for 15s, and then drying;
and 2, step: using a polyimide adhesive tape as an organic substrate, and adhering the dried strain film to a flat heat dissipation copper sheet to obtain a sample;
and step 3: spin-coating photoresist at 2500rpm, drying at 93 deg.C for 93s, photoetching, and developing;
and 4, step 4: manually coating photoresist on the joint of a GaAs substrate and a copper sheet of a sample by using a needle point under an optical microscope, and then placing the sample on a heating plate at the temperature of 93 ℃ for 50s for drying;
and 5: placing the sample into hydrofluoric acid solution with the concentration of 12%, soaking for 8 minutes, and corroding part of the sacrificial layer to enable the film to be curled;
and 6: quickly taking out the sample, and sequentially putting the sample into three glass beakers filled with acetone for about 4 s;
and 7: sequentially putting the sample into three glass beakers containing alcohol, and soaking for 7s respectively;
and 8: putting the sample into a culture dish containing deionized water, and putting the culture dish on a heating plate to be heated to 85 ℃; after the liquid level in the culture dish is lower than the curling part of the sample, the sample is taken out from the culture dish and directly placed on a heating plate to quickly volatilize the water on the flexible substrate.
Example 3:
a preparation method of a flexible substrate curled quantum well thin film material comprises the following steps:
step 1: adopting a thinning machine to transfer the pattern of the GaAs/Al plated with the gold electrode0.26Ga0.74Mechanically thinning the GaAs substrate of the As strain film from 500 mu m to 70 mu m, soaking the thinned strain film in an acetone solution for 20s, and then drying;
step 2: using a polyimide adhesive tape as an organic substrate, and adhering the dried strain film to a flat heat dissipation copper sheet to obtain a sample;
and step 3: spin-coating photoresist at 3000rpm, drying at 95 deg.C for 90s, photoetching, and developing to protect the electrode;
and 4, step 4: manually coating photoresist on the joint of a GaAs substrate and a copper sheet of a sample by using a needle point under an optical microscope, and then placing the sample on a heating plate at 95 ℃ for 40s for drying to protect a polyimide adhesive tape;
and 5: placing the sample into a hydrofluoric acid solution with the concentration of 15%, soaking for 3 minutes, and corroding part of the sacrificial layer to curl the film;
step 6: rapidly taking out the sample, and sequentially placing the sample into three glass beakers filled with acetone for about 5s each to gradually remove the photoresist;
and 7: sequentially placing the test sample into three glass beakers containing alcohol to be respectively soaked for 9s so as to gradually clean the reelpipe test sample;
and 8: putting the sample into a culture dish containing deionized water, and putting the culture dish on a heating plate to be heated to 95 ℃; after the liquid level in the culture dish is lower than the curling part of the sample, the sample is taken out from the culture dish and directly placed on a heating plate to quickly volatilize the water on the flexible substrate.
In conclusion, the toughness of the strain film substrate is effectively improved by sticking the heat-conducting sheet at the bottom of the strain film; the method does not need a critical point dryer, and effectively reduces the time for soaking the strain film in the organic solvent.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A preparation method of a flexible substrate curled quantum well thin film material is characterized by comprising the following steps:
step 1: taking the strain film which is subjected to pattern transfer and is plated with the electrode, soaking the strain film in a first cleaning solvent, and then drying; the strain film includes: the device comprises a GaAs substrate, a sacrificial layer arranged on the GaAs substrate and a layer to be curled, wherein the layer to be curled is arranged on the sacrificial layer; the electrode is arranged on the layer to be curled;
step 2: taking a binder and a heat conducting sheet, and bonding the GaAs substrate and the heat conducting sheet through the binder to obtain a sample comprising the strain film, the binder and the heat conducting sheet;
and step 3: spin-coating photoresist on one surface of the sample containing the electrode, and then drying, photoetching and developing to protect the electrode;
and 4, step 4: coating photoresist on the joint of the GaAs substrate and the heat conducting sheet, and then drying to protect the adhesive;
and 5: corroding and removing part of the sacrificial layer to enable the layer to be curled to generate partial curling;
step 6: removing the photoresist from the sample treated in the step 5 by using an organic solvent; the organic solvent is acetone solution; the method for removing the photoresist comprises the following steps: sequentially placing the sample into three containers filled with acetone solution for 3-6 s respectively;
and 7: cleaning the sample treated in the step 6 by a second cleaning solvent; the second cleaning solvent is an alcohol solution; the method for cleaning the sample comprises the following steps: sequentially putting the sample into three containers filled with alcohol solution for 5-10 s respectively;
and 8: immersing the sample treated in the step 7 into a container filled with deionized water, and placing the container on a heating plate for heating so as to gradually volatilize water; after the liquid level in the container is lower than the curl portion of the sample, the sample is taken out of the container and placed on a heating plate, and the heat conductive sheet is brought into contact with the heating plate to dry the sample.
2. The method for preparing a coiled quantum well thin film material on a flexible substrate as claimed in claim 1, wherein the first cleaning solvent is acetone solution.
3. The method for preparing the flexible substrate curled quantum well thin film material of claim 1, wherein the thickness of the GaAs substrate is 30 μm to 80 μm.
4. The method for preparing the flexible substrate curled quantum well thin film material of claim 1, wherein the adhesive is a polyimide tape.
5. The method for preparing the flexible substrate curled quantum well thin film material of claim 1, wherein the heat conducting sheet is a copper sheet.
6. The method for preparing the flexible substrate curled quantum well thin film material according to claim 1, wherein the temperature of the heating plate is 75-95 ℃.
7. A flexible substrate rolled quantum well thin film material, comprising: the heat-conducting film comprises a strain film, a heat-conducting fin and a bonding agent arranged between the strain film and the heat-conducting fin; the strain film includes: the device comprises a GaAs substrate, a sacrificial layer arranged on the GaAs substrate, and a three-dimensional curled micro-tube which is arranged on the sacrificial layer and plated with an electrode; the bonding agent bonds the GaAs substrate and the heat conducting sheet; the three-dimensional curled microtube is provided with a bent part; the bend is formed by stress generated after etching to remove a portion of the sacrificial layer.
8. The flexible substrate rolled quantum well thin film material of claim 7, wherein the adhesive is a polyimide tape and the thermally conductive sheet is a copper sheet.
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| EP1921120A1 (en) * | 2006-11-10 | 2008-05-14 | Nitto Denko Corporation | Self-rolling laminated sheet and self-rolling pressure-sensitive adhesive sheet |
| CN104555899A (en) * | 2014-12-18 | 2015-04-29 | 北京邮电大学 | Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles |
| CN111128728A (en) * | 2019-12-13 | 2020-05-08 | 清华大学 | Stretchable transistor and preparation method thereof |
| CN111137847A (en) * | 2019-12-25 | 2020-05-12 | 西安交通大学 | Preparation method of flexible functional oxide film with adjustable buckling micro-nano structure |
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| TWI570900B (en) * | 2006-09-29 | 2017-02-11 | 半導體能源研究所股份有限公司 | Method for manufacturing semiconductor device |
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|---|---|---|---|---|
| EP1921120A1 (en) * | 2006-11-10 | 2008-05-14 | Nitto Denko Corporation | Self-rolling laminated sheet and self-rolling pressure-sensitive adhesive sheet |
| CN104555899A (en) * | 2014-12-18 | 2015-04-29 | 北京邮电大学 | Method for reducing diameter of self-crimping micron tube by virtue of metal nanoparticles |
| CN111128728A (en) * | 2019-12-13 | 2020-05-08 | 清华大学 | Stretchable transistor and preparation method thereof |
| CN111137847A (en) * | 2019-12-25 | 2020-05-12 | 西安交通大学 | Preparation method of flexible functional oxide film with adjustable buckling micro-nano structure |
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