CN1122000A - Method for increasing measurement accuracy of surface plasma wave sensor and sensor thereby - Google Patents
Method for increasing measurement accuracy of surface plasma wave sensor and sensor thereby Download PDFInfo
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- CN1122000A CN1122000A CN 94119426 CN94119426A CN1122000A CN 1122000 A CN1122000 A CN 1122000A CN 94119426 CN94119426 CN 94119426 CN 94119426 A CN94119426 A CN 94119426A CN 1122000 A CN1122000 A CN 1122000A
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- kretschmann
- surface plasma
- sensor
- light
- polarizer
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005259 measurement Methods 0.000 title description 2
- 230000010287 polarization Effects 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002165 resonance energy transfer Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
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Abstract
The method for increasing measuring precision of surface plasma wave sensor features that P wave and S wave are simultaneously incident into Kretschmann device and after P wave is phase compensated and polarization detected, its output is close to zero, which is used as measuring base point. With said method, existing amplitude-type sensor is reformed into polarization-type surface plasma wave sensor featuring simple structure and high measuring precision.
Description
The invention belongs to the technical field of the sensor of various excitating surface plasma ripples, particularly to the improvement of the surface plasma wave sensor that constitutes with the Kretschmann device.
Over past ten years, utilize the sensor of Kretschmann device excitating surface plasma ripple to earn widespread respect and study.Physics, chemistry, biology and each field of machinery now have been applied to.For example in chemical field to various chemical analysis such as H
2CO; NH
3And wine detects control etc.The structure of this class sensor as shown in Figure 1.Generally comprise: monochromatic source (being generally laser) 11; The polarizer 12; Kretschmann device 13; Opto-electronic conversion 14, signal Processing 15.Its principle of work is: the P polarized light under certain conditions can the excitating surface plasma ripple, and this condition realizes with the Kretschmann device usually.When the excitating surface plasma ripple, because resonance energy transfer, its reflective light intensity diminishes, and the detection of reflected intensity variations can be known the situation that surface plasma wave excites.In this class sensor, the polarizer is placed to the P polarized light (P ripple) that only allows in the light source to be passed through, and (refractive index is n to the prism that the Kretschmann device is generally made by the glass or the crystal of high index of refraction
1) and through the plated film composition, general first metal-coated membrane, (refractive index is n as silver, gold, palladium etc.
2) plate again that sensing layer (or not having) has also between metal film or sensing membrane, add the middle layer.The excitating surface plasma ripple requires incident angle greater than the angle of total reflection.The reflected light characteristic with the variation of incident angle generally shown in figure two.
Curve shown in Figure 2 is to metallic diaphragm n
2And environment (refractive index n
3) very responsive.So under the condition of excitating surface plasma ripple, extraneous very little variation to be measured can cause the variation that reflected light is very big, measures the variation of reflective light intensity, can know variation to be measured.Common surface plasma wave sensor principle of work that Here it is.
Detection sensitivity is general relevant with minimum point reflectivity, half width and the curvilinear translation that causes to be measured.In order to improve measurement sensitivity, Many researchers adds the middle layer between metal level and sensing layer.Hope reduces the minimum point reflectivity by multi-coated interference.Present minimum point one highest wisdom is without the multimembrane interference technique, then in a few percent to tens; If adopted the multimembrane interference technique, then about one of percentage.
Thisly be difficult to prominently 0.5% based on surveying P ripple its minimum point reflectivity of various sensors of amplitude variations when the excitating surface plasma ripple, so measuring accuracy is restricted.
The objective of the invention is to propose a kind of method of new surface measurements plasma wave, in order to improving the measuring accuracy of existing surface plasma wave sensor, and form a kind of novel sensor--polarized surface plasma wave sensor.Have simple in structurely, the measuring accuracy height can be widely used in physics, chemistry, biology and each field of machinery.
The present invention proposes a kind of method that improves the measuring accuracy of existing surface plasma wave sensor, and said sensor comprises monochromatic source, the input path that the polarizer is formed, Kretschmann device; Receive catoptrical photelectric receiver and signal detector, it is characterized in that comprising following measure:
(1) position of the said polarizer is adjusted, the P of incident light and the light of two polarization directions of S all can be passed through, inject in the Kretschmann device;
(2) between said Kretschmann device and photelectric receiver, phase compensator and analyzer are set;
(3) relative position of said phase compensator of adjustment and analyzer is minimum to the signal of said signal detector reception, and as measuring basic point.
The present invention designs a kind of polarized surface plasma wave sensor that adopts said method, comprise monochromatic source, the input path that the polarizer is formed, make incident light carry out the Kretschmann device of total reflection, receive catoptrical photoelectric commutator and signal receiver, it is characterized in that the said polarizer is placed to makes incident light P, the position that the light of two polarization directions of S all passes through, also be included between said Kretschmann device and the photoelectric commutator phase compensator and analyzer are set, the analyzing direction of analyzer is vertical with the direction of polarized light by phase compensator.
New method based on P ripple phase place when the excitating surface plasma ripple significant change (about 300 degree) takes place also mainly and the S ripple owing to can not the excitating surface plasma make wave-amplitude and phase place can be thought basic no change in interested scope.Make polarized surface plasma wave sensor with new principle.It only needs original sensor is done little improvement, and detection resolution can improve one to two order of magnitude.Have simple in structure, the advantage of the high and wide adaptability of precision.
Device of the present invention as shown in Figure 3.It comprises monochromatic source (being generally laser) 31; The polarizer 32; Kretschmann device 33; Phase compensator 34; Analyzer 35; Opto-electronic conversion 36; Signal processor 37.Principle of work is: monochromatic light becomes linearly polarized light through the polarizer.With original scheme difference, there is an angle position of the position of polarizer placement here and the polarizer of prior art, makes the light that incides the Kretschmann device promptly have the P ripple that the S ripple is arranged again; Because P ripple excitating surface plasma ripple, reflected light has phase shift, and the S ripple is the excitating surface plasma ripple not, and reflected light does not have phase shift, and P ripple and S ripple just have phase differential θ p ', the normally ellipse garden of reflected light polarized light after the Kretschmann reflection like this.Phase compensator, P ripple and S ripple there is additional phase shift θ, adjust incident angle and can make θ p '+θ=m π (m is an integer), the light from the phase compensator outgoing is linearly polarized light like this, and light intensity is reduced to approximate zero behind the analyzing direction analyzer that herewith linearly polarized light is vertical.When external parameter changed, because the change of θ p ', the light of analyzer output had the very large variation of relative value, has therefore improved accuracy of detection.Scheme experimental result curve (b) as shown in Figure 4 to the experimental result curve (a) of the silver-plated film of Kretschmann device of the present invention and before improving.Be not difficult to find from experimental result: this device minimum point light intensity has only 3.3/10000ths of incident intensity, is reduced to 1/60 of prior art, subtle change to external world, and relative variation is about 60 times of prior art, promptly measures sensitivity and can improve one to two order of magnitude.
Adopt the method for the invention that former excitating surface plasma wave sensor is improved, can improve its measuring accuracy greatly.The polarization-type excitating surface plasma wave sensor scope of application that the present invention constituted is the same with prior art, comprises fields such as physics, chemistry, biology and machinery.
The present invention can adopt various disclosed Kretschmann devices, and prism, half garden post, even optical fiber; Phase compensator can or utilize electric light, magneto-optic, elasto-optical effect to make with various crystal, optical fiber.
Monochromatic wavelength in very large range changes does not influence the invention process, containing P ripple and S ripple simultaneously is characteristics of the present invention, but in very large range changing, the ratio of P ripple and S ripple do not influence the invention process, the variation of phase compensator compensation of phase does not in very large range influence the invention process, the condition of θ p '+θ=m π can both change θ p ' and satisfy by changing incident angle.The present invention utilizes the detection of polarized light, so the detection technique of existing polarized light all can be utilized.As adding the method for Polarization Modulation in front, the back adds the adjustable phase compensation again, and with the automatic or manual compensation etc., and accuracy of detection can also improve.
Fig. 1 is the transducer arrangement configuration synoptic diagram of prior art.
Fig. 2 is the reflectance curve figure of the sensor of prior art.
Fig. 3 is a structural representation of the present invention.
Fig. 4 is the present invention and prior art reflection strength curve comparison diagram.
The invention provides a kind of surface plasma wave sensing device embodiment that measures hydrogen content in the air.Its basic structure as shown in Figure 3.Wherein Kretschmann device metal layer is the Pd-Ni alloy, and the content of Ni is about 6%, and alloy-layer is pure by palladium, and nickel evaporation simultaneously obtains, and the alloy bed thickness is about 20nm.This metal level is again a sensing layer simultaneously.Principle of work is: Pd absorbs and adsorbs the variation that hydrogen causes optical constant, and this can be similar to sees that curve shown in the mapping four in the translation of θ direction, does not become because θ, so the detection light intensity changes.The adding of nickel is in order to prolong sensor serviceable life.
Claims (2)
1, a kind of method that improves the measuring accuracy of existing surface plasma wave sensor, said sensor comprises monochromatic source, the input path that the polarizer is formed, Kretschmann device; Receive catoptrical photelectric receiver and signal detector, it is characterized in that comprising following measure:
(1) position of the said polarizer is adjusted, the P of incident light and the light of two polarization directions of S all can be passed through, inject in the Kretschmann device;
(2) between said Kretschmann device and photelectric receiver, phase compensator and analyzer are set;
(3) relative position of said phase compensator of adjustment and analyzer is minimum to the signal of said signal detector reception, and as measuring basic point.
2, a kind of employing is the polarized surface plasma wave sensor of method according to claim 1, comprise monochromatic source, the input path that the polarizer is formed, make incident light carry out the Kretschmann device of total reflection, receive catoptrical photoelectric commutator and signal receiver, it is characterized in that the said polarizer is placed to makes incident light P, the position that the light of two polarization directions of S all passes through, also be included between said Kretschmann device and the photoelectric commutator phase compensator and analyzer are set, the analyzing direction of analyzer is vertical with the direction of polarized light by phase compensator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 94119426 CN1058787C (en) | 1994-12-23 | 1994-12-23 | Method for increasing measurement accuracy of surface plasma wave sensor and sensor thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 94119426 CN1058787C (en) | 1994-12-23 | 1994-12-23 | Method for increasing measurement accuracy of surface plasma wave sensor and sensor thereby |
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| Publication Number | Publication Date |
|---|---|
| CN1122000A true CN1122000A (en) | 1996-05-08 |
| CN1058787C CN1058787C (en) | 2000-11-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 94119426 Expired - Fee Related CN1058787C (en) | 1994-12-23 | 1994-12-23 | Method for increasing measurement accuracy of surface plasma wave sensor and sensor thereby |
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| CN (1) | CN1058787C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107941710A (en) * | 2017-08-16 | 2018-04-20 | 四川大学 | Surface plasma resonance sensor and metal surface medium refraction index measuring method based on the weak measurement of quantum |
| CN110542541A (en) * | 2019-08-08 | 2019-12-06 | 歌尔股份有限公司 | Method and device for measuring reflectivity of lens |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4481967B2 (en) * | 2005-09-05 | 2010-06-16 | キヤノン株式会社 | Sensor device |
-
1994
- 1994-12-23 CN CN 94119426 patent/CN1058787C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107941710A (en) * | 2017-08-16 | 2018-04-20 | 四川大学 | Surface plasma resonance sensor and metal surface medium refraction index measuring method based on the weak measurement of quantum |
| CN107941710B (en) * | 2017-08-16 | 2020-10-13 | 四川大学 | Surface plasma resonance sensor based on quantum weak measurement and method for measuring refractive index of metal surface medium |
| CN110542541A (en) * | 2019-08-08 | 2019-12-06 | 歌尔股份有限公司 | Method and device for measuring reflectivity of lens |
| CN110542541B (en) * | 2019-08-08 | 2021-04-09 | 歌尔光学科技有限公司 | Method and device for measuring reflectivity of lens |
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| Publication number | Publication date |
|---|---|
| CN1058787C (en) | 2000-11-22 |
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