CN112187240A - Control voltage complementary PIN switch - Google Patents
Control voltage complementary PIN switch Download PDFInfo
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- CN112187240A CN112187240A CN202011048060.2A CN202011048060A CN112187240A CN 112187240 A CN112187240 A CN 112187240A CN 202011048060 A CN202011048060 A CN 202011048060A CN 112187240 A CN112187240 A CN 112187240A
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- 239000003990 capacitor Substances 0.000 claims abstract description 39
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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Abstract
The invention relates to a control voltage complementary PIN switch which comprises a parallel PIN switch, wherein the N pole of each diode of the parallel PIN switch is respectively connected with a ground capacitor and an inductor, the two inductors are connected in series, a voltage division resistor is externally connected between the two inductors, and the other end of the voltage division resistor is connected with a control port. The invention changes single-end control into complementary control by improving the control mode of the switch, so that the reverse bias voltage applied to the diode is doubled under the same control level, and the increase of the power capacity is realized.
Description
Technical Field
The invention relates to the field of microwave circuits, in particular to a control voltage complementary PIN switch.
Background
In the field of microwave technology, a control circuit plays an important role, and the most typical control circuit is a switch, and switching of system transceiving, change of attenuation amount, phase shift amount and the like are realized by controlling on and off of the circuit through the switch. The emphasis on performance indicators is also different for switches of different applications. For example, a switch for controlling a transmission/reception path is often required to have a small insertion loss and a large power capacity for a transmission path.
At present, the control mode of the traditional parallel PIN diode switch is single-ended control, and the control level is defined as ± Vc. When + Vc is used for control, the diode is conducted in the forward direction, and the switch is turned off; when the Vc is controlled, the diode is reversely biased to be cut off, and the switch is turned on. The switching power capability depends on the difference between the diode forward conduction voltage Vth and the diode reverse bias control voltage-Vc. Therefore, for a switch with a PIN diode, it is common practice to increase the power capacity by appropriately increasing the reverse bias control voltage of the diode. For a system which only provides a fixed control voltage, how to realize a switch with higher power capacity is of great significance.
Disclosure of Invention
The invention aims to provide a control voltage complementary PIN switch, which solves the problem of insufficient power capacity of the traditional parallel PIN single-pole single-throw switch on the premise that the level of a control level provided by a system cannot be changed.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a control voltage complementary PIN switch comprises a parallel PIN switch, wherein the N pole of each diode of the parallel PIN switch is respectively connected with a ground capacitor and an inductor, the two inductors are connected in series, a voltage dividing resistor is externally connected between the two inductors, and the other end of the voltage dividing resistor is connected with a control port.
Furthermore, the parallel PIN switch is a two-section parallel single-pole single-throw PIN switch, and comprises a blocking capacitor C1, transmission path matching inductors L1 to L4 sequentially connected with the blocking capacitor C1, and a blocking capacitor C2, a diode D1 is connected between an inductor L1 and an inductor L2, a diode D2 is connected between the inductor L3 and an inductor L4, a bias choke inductor L5, a bypass capacitor C5 and a voltage dividing resistor R1 are connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected with a first control port;
n stages of the diode D1 and the diode D2 are respectively provided with a ground capacitor C3 and a ground capacitor C4, an inductor L6 and an inductor L7 are connected in series between the N stages of the diode D1 and the diode D2, a voltage dividing resistor R2 and a bypass capacitor C6 are connected to the outside between the inductor L6 and the inductor L7, and the other end of the voltage dividing resistor R2 is connected with a second control port.
Furthermore, the inductors L6 and L7 are planar winding inductors or microstrip lines, which are chokes or quarter-wave lines in the working frequency band of the switch and play a role in isolating microwave signals; and the bypass capacitors C5 and C6 are chip flat capacitors, play a role in filtering and are used for filtering noise waves influencing the normal work of the switch.
Furthermore, the parallel PIN type switch is a multi-section parallel type single-pole multi-throw PIN switch and is composed of a plurality of parallel type single-pole single-throw PIN switches, the N pole of the diode of each parallel type single-pole single-throw PIN switch is provided with a ground capacitor, two inductors are connected in series between the N poles of the two diodes, a voltage dividing resistor is connected between the two inductors, and the other end of the voltage dividing resistor is connected with the second control port.
Compared with the prior art, the invention has the advantages that the control mode of the switch is improved, and the single-ended control is changed into the complementary control, so that the reverse bias voltage applied to the diode is doubled under the same control level, and the increase of the power capacity is realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present invention. Wherein:
FIG. 1 is a schematic diagram of a conventional two-section parallel PIN diode switch;
FIG. 2 is a schematic diagram of a two-section parallel single-pole single-throw PIN diode switch with differential control according to an embodiment of the present invention;
FIG. 3 is a comparison of the signal power capability of the present invention and a conventional switch;
fig. 4 is a schematic diagram of a multi-section parallel single pole multiple throw PIN switch improved by the embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.
Referring to fig. 1, the complementary PIN switch for controlling voltage according to the present invention includes a parallel PIN switch, the N-pole of each diode of the parallel PIN switch is respectively connected to a ground capacitor and an inductor, the two inductors are connected in series and externally connected to a voltage dividing resistor between the two inductors, and the other end of the voltage dividing resistor is connected to a control port.
As shown in fig. 1, the conventional parallel PIN switch includes diodes D1 and D2, dc blocking capacitors C1 and C2, transmission path matching inductors L1 to L4, a bias choke inductor L5, a bypass capacitor C5, and a voltage dividing resistor R1. The direct current blocking capacitor C1 and a transmission path sequentially connected with the direct current blocking capacitor C1 are matched with inductors L1 to L4 and a direct current blocking capacitor C2, a diode D1 is connected between an inductor L1 and an inductor L2, a diode D2 is connected between the inductor L3 and an inductor L4, a bias choke inductor L5, a bypass capacitor C5 and a voltage division resistor R1 are connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected with a control port 1.
As an embodiment of the present invention, as shown in fig. 2, the parallel PIN switch is a two-stage parallel single-pole single-throw PIN switch, and on the basis of the conventional parallel PIN structure, capacitors C3 and C4 to ground, inductors L6 and L7, a voltage dividing resistor R2, and a bypass capacitor C6 are added to N stages of diodes D1 and D2. The N stages of the diode D1 and the diode D2 are respectively provided with a ground capacitor C3 and a ground capacitor C4, an inductor L6 and an inductor L7 are connected in series between the N stages of the diode D1 and the diode D2, a voltage dividing resistor R2 and a bypass capacitor C6 are connected to the outside between the inductor L6 and the inductor L7, and the other end of the voltage dividing resistor R2 is connected with the control port 2.
The inductors L6 and L7 are planar winding inductors or microstrip lines which are chokes or quarter-wave lines of a switch working frequency band and play a role in isolating microwave signals; and the bypass capacitors C5 and C6 are chip flat capacitors, play a role in filtering and are used for filtering noise waves influencing the normal work of the switch.
When the voltage Vc is applied to the control port 1 and the voltage-Vc is applied to the control port 2, the PIN diodes D1 and D2 are in forward bias, and at the moment, the resistors R1 and R2 mainly play roles in voltage division and current limitation, so that the diodes work under safe current. The capacitors C3 and C4 provide a signal-to-ground loop when the switch is turned off (i.e., when the diode is forward biased), so that the impedances from the port RFin to the diode D1 and from the port RFout to the diode D2 are very large, which is approximately an open circuit, and a good turn-off effect is generated between the port RFin to the port RFout.
When the voltage-Vc is applied to the control port 1 and the voltage Vc is applied to the control port 2, the PIN diodes D1 and D2 are in a reverse bias state, the switch path is turned on, and the reverse bias voltage applied to the diodes is changed from Vc of a traditional structure to complementary 2 × Vc, so that the power level of undistorted signals which can be accommodated in the switch path is changed from Vc + Vth of the traditional structure to 2Vc + Vth of the complementary structure, and the comparison of signal power transmission is shown in fig. 3, thereby realizing the increase of power capacity in the switch on state.
As another embodiment of the present invention, as shown in fig. 4, the parallel PIN switch is a multi-stage parallel single-pole multi-throw PIN switch, and is composed of a plurality of parallel single-pole single-throw PIN switches, an N-pole of a diode of each of the parallel single-pole single-throw PIN switches is provided with a ground capacitor, two inductors are connected in series between the N-poles of the two diodes, a voltage dividing resistor is externally connected between the two inductors, and the other end of the voltage dividing resistor is connected to the second control port. According to the improved two-section parallel type single-pole double-throw PIN switch schematic diagram, when a circuit works, voltage-Vc is added through a control port 1, voltage Vc is added through a control port 2, the on-state of paths of RFin and RFout1 is realized, and the paths of RFin and RFout2 are switched off; on the contrary, when the voltage Vc is applied to the control port 1 and the voltage-Vc is applied to the control port 2, the connection of the paths of RFin and RFout2 is realized, and the connection of the paths of RFin and RFout1 is closed.
The on-off of the switch of the invention does not necessarily need a differential level as a control voltage, and the switch control of the circuit can be realized as long as the control voltage difference of the control ports 1 and 2 is larger than Vth, so that the invention can realize a control mode compatible with the traditional two-section parallel PIN type diode switch by grounding the control port 2.
In addition, the method of the invention is not limited to the two-section parallel single-pole single-throw PIN switch implemented by the invention, and is also suitable for the single-pole multi-throw multi-section parallel PIN switch.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. A control voltage complementary PIN switch comprises a parallel PIN switch and is characterized in that the N pole of each diode of the parallel PIN switch is respectively connected with a ground capacitor and an inductor, the two inductors are connected in series, a voltage dividing resistor is externally connected between the two inductors, and the other end of the voltage dividing resistor is connected with a control port.
2. The control voltage complementary PIN switch according to claim 1, wherein the parallel PIN switch is a two-section parallel single-pole single-throw PIN switch, and comprises a blocking capacitor C1, and transmission path matching inductors L1 to L4 and a blocking capacitor C2 which are sequentially connected with the blocking capacitor C1, a diode D1 is connected between an inductor L1 and an inductor L2, a diode D2 is connected between the inductor L3 and an inductor L4, a bias choke inductor L5, a bypass capacitor C5 and a voltage dividing resistor R1 are connected between the inductor L3 and the inductor L4, and the other end of the resistor R1 is connected with the first control port;
n stages of the diode D1 and the diode D2 are respectively provided with a ground capacitor C3 and a ground capacitor C4, an inductor L6 and an inductor L7 are connected in series between the N stages of the diode D1 and the diode D2, a voltage dividing resistor R2 and a bypass capacitor C6 are connected to the outside between the inductor L6 and the inductor L7, and the other end of the voltage dividing resistor R2 is connected with a second control port.
3. The control voltage complementary PIN switch according to claim 2, wherein the inductors L6 and L7 are planar wound inductors or microstrip lines, which are chokes or quarter-wave lines of a switch operating band and serve as microwave signal isolation; and the bypass capacitors C5 and C6 are chip flat capacitors, play a role in filtering and are used for filtering noise waves influencing the normal work of the switch.
4. The control voltage complementary PIN switch of claim 2, wherein: the parallel PIN type switch is a multi-section parallel type single-pole multi-throw PIN switch and is composed of a plurality of parallel type single-pole single-throw PIN switches, the N pole of a diode of each parallel type single-pole single-throw PIN switch is provided with a ground capacitor, two inductors are connected in series between the N poles of the two diodes, a voltage dividing resistor is connected between the two inductors, and the other end of the voltage dividing resistor is connected with a second control port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011048060.2A CN112187240A (en) | 2020-09-29 | 2020-09-29 | Control voltage complementary PIN switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011048060.2A CN112187240A (en) | 2020-09-29 | 2020-09-29 | Control voltage complementary PIN switch |
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| CN112187240A true CN112187240A (en) | 2021-01-05 |
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| CN202011048060.2A Pending CN112187240A (en) | 2020-09-29 | 2020-09-29 | Control voltage complementary PIN switch |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003060514A (en) * | 2001-08-20 | 2003-02-28 | Kenwood Corp | Transmitter |
| US20080088388A1 (en) * | 2006-10-13 | 2008-04-17 | Kormanyos Brian K | Method to improve characteristics of pin diode switches, attenuators, and limiters by control of nodal signal voltage amplitude |
| CN202210797U (en) * | 2011-09-28 | 2012-05-02 | 四川九立微波有限公司 | Front end assembly of frequency-selecting receiver of multichannel microwave communication machine |
| CN105426804A (en) * | 2015-12-14 | 2016-03-23 | 威海北洋电气集团股份有限公司 | Radio frequency signal read-write switching circuit |
| CN205986856U (en) * | 2016-08-23 | 2017-02-22 | 海能达通信股份有限公司 | Transceiver and transmit -receive switch thereof |
| CN107222183A (en) * | 2017-05-27 | 2017-09-29 | 中国电子科技集团公司第四十研究所 | A kind of wide-band microwave switch duplicate circuitry of low video feedthrough leakage |
| WO2020176878A1 (en) * | 2019-02-28 | 2020-09-03 | Macom Technology Solutions Holdings, Inc. | Monolithic multi-i region diode switches |
-
2020
- 2020-09-29 CN CN202011048060.2A patent/CN112187240A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003060514A (en) * | 2001-08-20 | 2003-02-28 | Kenwood Corp | Transmitter |
| US20080088388A1 (en) * | 2006-10-13 | 2008-04-17 | Kormanyos Brian K | Method to improve characteristics of pin diode switches, attenuators, and limiters by control of nodal signal voltage amplitude |
| CN202210797U (en) * | 2011-09-28 | 2012-05-02 | 四川九立微波有限公司 | Front end assembly of frequency-selecting receiver of multichannel microwave communication machine |
| CN105426804A (en) * | 2015-12-14 | 2016-03-23 | 威海北洋电气集团股份有限公司 | Radio frequency signal read-write switching circuit |
| CN205986856U (en) * | 2016-08-23 | 2017-02-22 | 海能达通信股份有限公司 | Transceiver and transmit -receive switch thereof |
| CN107222183A (en) * | 2017-05-27 | 2017-09-29 | 中国电子科技集团公司第四十研究所 | A kind of wide-band microwave switch duplicate circuitry of low video feedthrough leakage |
| WO2020176878A1 (en) * | 2019-02-28 | 2020-09-03 | Macom Technology Solutions Holdings, Inc. | Monolithic multi-i region diode switches |
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