CN112187083A - Power loss calculation method of three-level wind power converter - Google Patents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
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- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
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Abstract
Description
技术领域technical field
本发明属于电力器件领域,特别涉及一种三电平风电变流器的功率损耗计算方法。The invention belongs to the field of power devices, and in particular relates to a power loss calculation method of a three-level wind power converter.
背景技术Background technique
开关器件的功率损耗是变流器主电路中的一个主要发热来源,过多开关器件损耗会导致器件温度的升高、系统性能下降甚至变频器故障。所以开关器件损耗估算十分重要,对于变流器电路、机械结构和冷却系统的设计是极其必要的。但是,该估算也是非常复杂的,它与变流器的开关器件特性、电路拓扑、PWM(脉冲宽度调制)方式、吸收电路和电路杂散电感都有一定的关系。在传统技术中,开关器件损耗是通过一段较长时间内平均效应来计算的。根据平均效应来计算得到的平均值,只能采取几种简单的方式来确保开关器件的温升,比如同时采用开通和关断吸收电路,并将吸收电路的主要参数设计得足够大,这几种方案以较大的代价将开关器件的功率损耗转化成为吸收电路的损耗。或者可将变流器的冷却系统冷却效果加强,将一些可以风冷的变流器设计成为水冷变流器,但这类措施在一定程度上增加了变流器的成本,降低了变流器的效率。正是开关器件功率损耗估测的不准确,才给变流器整个系统的设计和优化带来困难。The power loss of switching devices is a major source of heat generation in the main circuit of the converter. Excessive switching device losses will lead to device temperature rise, system performance degradation and even inverter failure. Therefore, the estimation of switching device losses is very important, and it is extremely necessary for the design of the converter circuit, mechanical structure and cooling system. However, the estimation is also very complicated, and it has a certain relationship with the switching device characteristics of the converter, circuit topology, PWM (pulse width modulation) method, absorption circuit and circuit stray inductance. In conventional techniques, switching device losses are calculated by averaging the effects over a longer period of time. For the average value calculated according to the average effect, there are only a few simple ways to ensure the temperature rise of the switching device, such as turning on and off the absorption circuit at the same time, and designing the main parameters of the absorption circuit to be large enough. This scheme converts the power loss of the switching device into the loss of the absorption circuit at a relatively high cost. Alternatively, the cooling effect of the cooling system of the converter can be enhanced, and some air-cooled converters can be designed as water-cooled converters, but such measures increase the cost of the converter to a certain extent and reduce the cost of the converter. s efficiency. It is the inaccurate estimation of the power loss of the switching device that brings difficulties to the design and optimization of the entire system of the converter.
发明内容SUMMARY OF THE INVENTION
针对上述问题,本发明提供一种三电平风电变流器的功率损耗计算方法。In view of the above problems, the present invention provides a method for calculating the power loss of a three-level wind power converter.
本发明提供的三电平风电变流器的功率损耗计算方法,其中,所述三电平风电变流器中单相桥臂包括开关管T1-T6、二极管D1-D6及电容Cd1和Cd2,所述开关管T1-T6中的每一个开关管Ti都和对应的二极管Di反并联,i为整数且1≤i≤6,即所述开关管Ti的集电极或阳极连接至所述对应的二极管Di的阴极,且所述开关管Ti的发射极或阴极连接至所述对应的二极管Di的阳极,所述开关管T1-T4依次顺序串联,即前一开关管的发射极或阴极连接至后一开关管的集电极或阳极;所述电容Cd1的正极连接至所述开关管T1的集电极或阳极,所述电容Cd1的负极连接至所述电容Cd2的正极和所述开关管T5的发射极或阴极;所述电容Cd2的负极连接至所述开关管T4的发射极或阴极;所述开关管T5的集电极或阳极连接至所述开关管T1的发射极或阴极,所述开关管T5的发射极或阴极连接至所述开关管T6的集电极或阳极;所述开关管T6的发射极或阴极连接至所述开关管T4的集电极或阳极,The method for calculating the power loss of a three-level wind power converter provided by the present invention, wherein, the single-phase bridge arm in the three-level wind power converter includes switching transistors T1-T6, diodes D1-D6 and capacitors Cd1 and Cd2, Each of the switch transistors T1-T6 is in anti-parallel with the corresponding diode Di, i is an integer and 1≤i≤6, that is, the collector or anode of the switch transistor Ti is connected to the corresponding diode Di. The cathode of the diode Di, and the emitter or cathode of the switch tube Ti is connected to the anode of the corresponding diode Di, the switch tubes T1-T4 are connected in series in sequence, that is, the emitter or cathode of the previous switch tube is connected to The collector or anode of the latter switch tube; the positive pole of the capacitor Cd1 is connected to the collector or anode of the switch tube T1, and the negative pole of the capacitor Cd1 is connected to the positive pole of the capacitor Cd2 and the switch tube T5. Emitter or cathode; the cathode of the capacitor Cd2 is connected to the emitter or cathode of the switch tube T4; the collector or anode of the switch tube T5 is connected to the emitter or cathode of the switch tube T1, the switch The emitter or cathode of the tube T5 is connected to the collector or anode of the switch tube T6; the emitter or cathode of the switch tube T6 is connected to the collector or anode of the switch tube T4,
所述功率器件损耗计算方法包括:The power device loss calculation method includes:
确定所述开关管T1、T2、T5和二极管D1、D2、D5的导通角度与占空比的关系;Determine the relationship between the conduction angle of the switches T1, T2, T5 and the diodes D1, D2, D5 and the duty cycle;
依据所述导通角度与占空比计算所述开关管T1、T2、T5的开通损耗、关断损耗、通态损耗;Calculate the turn-on loss, turn-off loss, and on-state loss of the switch transistors T1, T2, and T5 according to the conduction angle and the duty cycle;
依据所述导通角度与占空比计算所述二极管D1、D2、D5的关断损耗、通态损耗。The turn-off loss and on-state loss of the diodes D1 , D2 and D5 are calculated according to the conduction angle and the duty cycle.
进一步,further,
设α表示功率因数角度,M为调制度,则Let α represent the power factor angle and M the modulation degree, then
所述开关管T1的导通角度处于区间[0,π-α]时,占空比为Msin(wt+α);When the conduction angle of the switch tube T1 is in the interval [0, π-α], the duty cycle is Msin(wt+α);
所述二极管D1的导通角度处于区间[2π-α,2π]时,占空比为Msin(wt+α);When the conduction angle of the diode D1 is in the interval [2π-α, 2π], the duty cycle is Msin(wt+α);
所述开关管T2的导通角度处于区间[0,π]时,占空比为(1+Msin(wt+α))/2;When the conduction angle of the switch tube T2 is in the interval [0, π], the duty cycle is (1+Msin(wt+α))/2;
所述二极管D2的导通角度处于区间[π,2π-α]时,占空比为(1+Msin(wt+α))/2;When the conduction angle of the diode D2 is in the interval [π, 2π-α], the duty cycle is (1+Msin(wt+α))/2;
所述二极管D2的导通角度处于区间[2π-α,2π]时,占空比为(1+Msin(wt+α))/2;When the conduction angle of the diode D2 is in the interval [2π-α, 2π], the duty cycle is (1+Msin(wt+α))/2;
所述开关管T5的导通角度处于区间[π,2π-α]时,占空比为(1+Msin(wt+α))/2;When the conduction angle of the switch tube T5 is in the interval [π, 2π-α], the duty ratio is (1+Msin(wt+α))/2;
所述开关管T5的导通角度处于区间[2π-α,2π]时,占空比为(1-Msin(wt+α))/2;When the conduction angle of the switch tube T5 is in the interval [2π-α, 2π], the duty ratio is (1-Msin(wt+α))/2;
所述二极管D5的导通角度处于区间[0,π-α]时,占空比为(1-Msin(wt+α))/2;When the conduction angle of the diode D5 is in the interval [0, π-α], the duty cycle is (1-Msin(wt+α))/2;
所述二极管D5的导通角度处于区间[π-α,π]时,占空比为(1+Msin(wt+α))/2。When the conduction angle of the diode D5 is in the interval [π-α, π], the duty ratio is (1+Msin(wt+α))/2.
进一步,further,
所述开关管T1、T2、T5的开通损耗为The turn-on losses of the switches T1, T2, and T5 are
其中,in,
Ip和Um分别为所述单相桥臂电流I和电压U的幅值,w为所述电流I和电压U的频率,t代表时间,fsw为器件开关频率,k1是根据IGCT开通时开关条件与标准测试条件关系引入的修正系数,Qon0是单脉冲开通能量,Vd0和iL0是数据手册中的标准测试条件;I p and U m are the amplitudes of the single-phase bridge arm current I and voltage U, respectively, w is the frequency of the current I and voltage U, t represents time, f sw is the switching frequency of the device, k 1 is the correction coefficient introduced according to the relationship between the switching conditions and the standard test conditions when the IGCT is turned on, Q on0 is the single-pulse turn-on energy, and V d0 and i L0 are the standard test conditions in the data sheet;
所述开关管T1、T2、T5的关断损耗为The turn-off losses of the switches T1, T2, and T5 are
其中,in,
k2是根据所述开关管关断时开关条件与标准测试条件关系引入的修正系数,Qoff0为单脉冲关断能量; k 2 is a correction coefficient introduced according to the relationship between the switching condition and the standard test condition when the switch tube is turned off, and Q off0 is the single-pulse turn-off energy;
所述开关管T1、T2、T5的通态损耗为The on-state losses of the switches T1, T2, and T5 are:
其中,in,
VT0为门槛电压,rT为斜率电阻。V T0 is the threshold voltage, and r T is the slope resistance.
进一步,further,
所述二极管D1、D2、D5的关断损耗为The turn-off losses of the diodes D1, D2, D5 are
其中,k3是根据所述二极管关断时开关条件与标准测试条件关系引入的修正系数;in, k 3 is a correction coefficient introduced according to the relationship between the switching condition and the standard test condition when the diode is turned off;
所述二极管D1、D2、D5的通态损耗为The on-state losses of the diodes D1, D2, D5 are
进一步,further,
所述开关管T1的损耗包括:The loss of the switch tube T1 includes:
开关损耗 switching loss
通态损耗 On-state loss
进一步,further,
所述开关管T2的损耗包括:The loss of the switch tube T2 includes:
开关损耗 switching loss
通态损耗 On-state loss
进一步,further,
开关管T5的损耗包括:The loss of switch tube T5 includes:
开关损耗 switching loss
通态损耗 On-state loss
进一步,further,
所述二极管D1的损耗包括:The losses of the diode D1 include:
开关损耗 switching loss
通态损耗 On-state loss
进一步,further,
所述二极管D2的损耗包括:The losses of the diode D2 include:
开关损耗 switching loss
通态损耗 On-state loss
进一步,further,
所述二极管D5的损耗包括:The losses of the diode D5 include:
开关损耗 switching loss
通态损耗On-state loss
本发明的三电平风电变流器的功率损耗计算方法,提出开关管的开通损耗、关断损耗、通态损耗计算方法和二极管关断损耗、通态损耗的计算方法,从功率器件的开通、关断、导通损耗模型着手,并综合考虑调制策略对损耗计算的影响,计算方法相较传统方法更准确,可为风电变流器的散热设计和运行状态评估提供理论和技术基础。The power loss calculation method of the three-level wind power converter of the present invention proposes a calculation method for the turn-on loss, turn-off loss and on-state loss of a switch tube and a calculation method for the turn-off loss and on-state loss of a diode. , turn-off and turn-on loss models, and comprehensively consider the influence of the modulation strategy on the loss calculation. The calculation method is more accurate than the traditional method, which can provide a theoretical and technical basis for the heat dissipation design and operation status evaluation of wind power converters.
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所指出的结构来实现和获得。Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure pointed out in the description, claims and drawings.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are For some embodiments of the present invention, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.
图1示出了采用本发明的功率损耗计算方法的ANPC(Active-neutral-point-clamped,有源中点箝位)三电平的单相桥臂结构;FIG. 1 shows an ANPC (Active-neutral-point-clamped) three-level single-phase bridge arm structure using the power loss calculation method of the present invention;
图2示出了根据本发明实施例的调制周期内电压和电流关系示意图。FIG. 2 shows a schematic diagram of the relationship between voltage and current in a modulation period according to an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地说明,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
图1所示为三电平风电变流器的ANPC三电平单相桥臂结构图。由图1可知,所述单相桥臂包括开关管T1-T6、二极管D1-D6及电容Cd1和Cd2。其中,开关管T1-T6均为全控电力电子器件如IGCT(集成门极换流晶闸管)。设每一个开关管Ti(i为整数且1≤i≤6)均为IGCT,在所述ANPC三电平单相桥臂中,每一个所述开关管Ti都和对应的二极管Di反并联,即开关管Ti的阳极连接至二极管Di的阴极,且开关管Ti的阴极连接至二极管Di的阳极。开关管T1-T4依次顺序串联,即前一开关管的阴极连接至后一开关管的阳极;电容Cd1的正极连接至开关管T1的阳极,电容Cd1的负极连接至电容Cd2的正极和开关管T5的阴极;电容Cd2的负极连接至开关管T4的阴极;开关管T5的阳极连接至开关管T1的阴极,开关管T5的阴极连接至开关管T6的阳极;开关管T6的阴极连接至开关管T4的阳极。其中,所述全控电力电子器件也可取为IGBT(绝缘栅双极型晶体管)或IEGT(注入增强型栅极晶体管),当开关管为IGBT或IEGT时,前述图1中开关管的阳极应为集电极,前述图1中开关管的阴极应为发射极。其中,开关管T5和T6为箝位开关管,当T5和T6一直关断只使用其反并联二极管时,所述单相桥臂为中性点钳位NPC(Neutral point clamped,中性点钳位)模式;当T5和T6也参与调制的时候,所述单相桥臂为有源中性点钳位ANPC模式。Figure 1 shows the structure diagram of the ANPC three-level single-phase bridge arm of the three-level wind power converter. It can be seen from FIG. 1 that the single-phase bridge arm includes switch transistors T1-T6, diodes D1-D6, and capacitors Cd1 and Cd2. Among them, the switch tubes T1-T6 are all fully controlled power electronic devices such as IGCT (Integrated Gate Commutated Thyristor). Assuming that each switch tube Ti (i is an integer and 1≤i≤6) is an IGCT, in the ANPC three-level single-phase bridge arm, each of the switch tubes Ti is in antiparallel with the corresponding diode Di, That is, the anode of the switch tube Ti is connected to the cathode of the diode Di, and the cathode of the switch tube Ti is connected to the anode of the diode Di. The switch tubes T1-T4 are connected in series in sequence, that is, the cathode of the previous switch tube is connected to the anode of the latter switch tube; the positive pole of the capacitor Cd1 is connected to the anode of the switch tube T1, and the negative pole of the capacitor Cd1 is connected to the positive pole of the capacitor Cd2 and the switch tube. The cathode of T5; the cathode of the capacitor Cd2 is connected to the cathode of the switch tube T4; the anode of the switch tube T5 is connected to the cathode of the switch tube T1, the cathode of the switch tube T5 is connected to the anode of the switch tube T6; the cathode of the switch tube T6 is connected to the switch tube Anode of tube T4. Wherein, the fully controlled power electronic device may also be IGBT (Insulated Gate Bipolar Transistor) or IEGT (Injection Enhanced Gate Transistor). When the switch tube is an IGBT or an IEGT, the anode of the switch tube in FIG. For the collector, the cathode of the switch tube in the aforementioned Figure 1 should be the emitter. Among them, the switches T5 and T6 are clamp switches. When T5 and T6 are always turned off and only use their anti-parallel diodes, the single-phase bridge arm is a neutral point clamped NPC (Neutral point clamped, neutral point clamped). Bit) mode; when T5 and T6 also participate in modulation, the single-phase bridge arm is in active neutral point clamp ANPC mode.
本发明以ANPC三电平单相桥臂中的IGCT、反并联二极管和箝位二极管的功率损耗为对象,根据开关器件的特性,给出其不同开关状态下功率损耗计算方法。The invention takes the power loss of the IGCT, the anti-parallel diode and the clamping diode in the ANPC three-level single-phase bridge arm as the object, and provides a calculation method of the power loss under different switching states according to the characteristics of the switching device.
损耗的计算需要考虑各功率器件在一个调制周内的动作状况如图2所示,其中α表示功率因数角度。根据所述单相桥臂电流和电压过零点情况可将一个调制周期分为四个区域。以所述单相桥臂电流为正弦波形,则电压正弦波形存在功率因数角度,所述单相桥臂电流I和电压U表示为如下式(1)和式(2)。The calculation of the loss needs to consider the operation status of each power device in one modulation cycle, as shown in Figure 2, where α represents the power factor angle. According to the situation of the single-phase bridge arm current and voltage zero-crossing point, one modulation period can be divided into four regions. Taking the single-phase bridge arm current as a sinusoidal waveform, the voltage sinusoidal waveform has a power factor angle, and the single-phase bridge arm current I and voltage U are expressed as the following equations (1) and (2).
I=Ipsin(wt) (1)I=I p sin(wt) (1)
U=Umsin(wt+α) (2)U=U m sin(wt+α) (2)
其中,Ip和Um分别为电流I和电压U的幅值,w为电流I和电压U的频率,t代表时间。Among them, I p and U m are the amplitudes of the current I and the voltage U, respectively, w is the frequency of the current I and the voltage U, and t represents the time.
根据ANPC变流器上下桥臂的对称性,以上桥臂的功率器件为例进行分析,可知ANPC变流器中各开关器件的导通角度与占空比的关系如表1所示,其中M表示调制度。According to the symmetry of the upper and lower bridge arms of the ANPC converter, taking the power device of the upper bridge arm as an example, it can be seen that the relationship between the conduction angle and the duty cycle of each switching device in the ANPC converter is shown in Table 1, where M Indicates modulation.
表1ANPC变流器中各开关器件的导通角度与占空比Table 1 Conduction angle and duty cycle of each switching device in the ANPC converter
下面计算所述上桥臂的各功率器件(包括开关管T1、T2、T5和二极管D1、D2、D5)的开关和导通损耗。The switching and conduction losses of each power device of the upper bridge arm (including switching transistors T1, T2, T5 and diodes D1, D2, and D5) are calculated below.
(1)IGCT开通损耗(1) IGCT turn-on loss
IGCT器件开通损耗为The turn-on loss of the IGCT device is
其中,fsw为器件开关频率,k1是根据IGCT开通时开关条件与标准测试条件关系引入的修正系数,Qon0是单脉冲开通能量,可设为1.8J,Vd0和iL0是数据手册中的标准测试条件。where f sw is the switching frequency of the device, k 1 is the correction factor introduced according to the relationship between the switching conditions and the standard test conditions when the IGCT is turned on, Q on0 is the single-pulse turn-on energy, which can be set to 1.8J, and V d0 and i L0 are the standard test conditions in the data sheet.
(2)IGCT关断损耗(2) IGCT turn-off loss
IGCT器件关断损耗为The turn-off loss of the IGCT device is
其中,k2是根据IGCT关断时开关条件与标准测试条件关系引入的修正系数,Qoff0为单脉冲关断能量。in, k 2 is a correction coefficient introduced according to the relationship between the switching conditions and the standard test conditions when the IGCT is turned off, and Q off0 is the single-pulse turn-off energy.
(3)二极管关断损耗(3) Diode turn-off loss
二极管只考虑关断损耗,二极管的关断损耗为The diode only considers the turn-off loss, and the turn-off loss of the diode is
其中,k3是根据二极管关断时开关条件与标准测试条件关系引入的修正系数。in, k 3 is the correction factor introduced according to the relationship between the switching conditions and the standard test conditions when the diode is turned off.
(4)IGCT通态损耗(4) IGCT conduction loss
IGCT通态损耗为The IGCT on-state loss is
其中,VT0为门槛电压,rT为斜率电阻,所述门槛电压和斜率电阻满足根据IGCT的V-I曲线的拟合得到的IGCT的通态峰值电压VT=VT0+i·rT。Wherein, V T0 is the threshold voltage, r T is the slope resistance, and the threshold voltage and slope resistance satisfy the on-state peak voltage V T =V T0 +i·r T of the IGCT obtained by fitting the VI curve of the IGCT.
(5)二极管通态损耗(5) Diode on-state loss
二极管通态损耗为The diode conduction loss is
下面计算所述ANPC三电平单相桥臂的系统开关损耗。The system switching loss of the three-level single-phase bridge arm of the ANPC is calculated below.
ANPC三电平变流器的系统开关损耗与变流器的调制策略有关,本申请针对载波移相调制策略进行系统开关损耗计算。The system switching loss of the ANPC three-level converter is related to the modulation strategy of the converter, and the present application calculates the system switching loss for the carrier phase-shift modulation strategy.
载波移相PWM中,三个开关器件T1、T2、T5的开关频率完全相等。两个载波之间相位差180度,分别对应内管基频调制和外管基频调制,也可认为两个载波分别对应开关管T1和T2的开通关断。载波移相模式下ANPC变流器中各电力电子器件的导通角度与占空比的关系如表2所示,其中M表示调制度。In the carrier phase-shift PWM, the switching frequencies of the three switching devices T1, T2, and T5 are completely equal. The phase difference between the two carriers is 180 degrees, respectively corresponding to the fundamental frequency modulation of the inner tube and the fundamental frequency modulation of the outer tube. The relationship between the conduction angle and the duty cycle of each power electronic device in the ANPC converter in the carrier phase-shift mode is shown in Table 2, where M represents the modulation degree.
(11)开关管T1的损耗(11) Loss of switch tube T1
开关管T1的损耗包括:The losses of the switch tube T1 include:
开关损耗 switching loss
通态损耗 On-state loss
(22)二极管D1的损耗(22) Loss of diode D1
二极管D1的损耗包括:The losses of diode D1 include:
开关损耗 switching loss
通态损耗 On-state loss
(33)开关管T2的损耗(33) Loss of switch tube T2
开关管T2的损耗包括:The loss of switch tube T2 includes:
开关损耗 switching loss
通态损耗 On-state loss
(44)二极管D2的损耗(44) Loss of diode D2
二极管D2的损耗包括:Diode D2 losses include:
开关损耗 switching loss
通态损耗 On-state loss
(55)开关管T5的损耗(55) Loss of switch tube T5
开关管T5的损耗包括:The loss of switch tube T5 includes:
开关损耗 switching loss
通态损耗 On-state loss
(66)二极管D5的损耗(66) Loss of diode D5
二极管D5的损耗包括:Diode D5 losses include:
开关损耗 switching loss
通态损耗On-state loss
上述实施例中的开关管也可为IGBT或IEGT。根据ANPC变流器上下桥臂的对称性可以得到开关管T3、T4、T6和二极管D3、D4、D6的开关和导通损耗。The switch tube in the above embodiment can also be an IGBT or an IEGT. According to the symmetry of the upper and lower bridge arms of the ANPC converter, the switching and conduction losses of the switches T3, T4, T6 and the diodes D3, D4, and D6 can be obtained.
综上可知,本发明的三电平风电变流器的功率损耗计算方法,提出开关管的开通损耗、关断损耗、通态损耗计算方法和二极管关断损耗、通态损耗的计算方法,从功率器件的开通、关断、导通损耗模型着手,并综合考虑调制策略对损耗计算的影响,计算方法相较传统方法更准确,可为风电变流器的散热设计和运行状态评估提供理论和技术基础。To sum up, the power loss calculation method of the three-level wind power converter of the present invention proposes a calculation method for the turn-on loss, turn-off loss, and on-state loss of a switch tube, and a calculation method for the turn-off loss and on-state loss of a diode. The turn-on, turn-off, and conduction loss models of power devices are started, and the influence of the modulation strategy on the loss calculation is comprehensively considered. technical foundation.
尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some of the technical features; and these Modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
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