CN112186072A - Preparation method of PERC solar cell - Google Patents
Preparation method of PERC solar cell Download PDFInfo
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- CN112186072A CN112186072A CN202011015018.0A CN202011015018A CN112186072A CN 112186072 A CN112186072 A CN 112186072A CN 202011015018 A CN202011015018 A CN 202011015018A CN 112186072 A CN112186072 A CN 112186072A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
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- 238000005245 sintering Methods 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 20
- -1 silver-aluminum Chemical compound 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 19
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- 238000000151 deposition Methods 0.000 claims abstract description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
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- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
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- 239000004332 silver Substances 0.000 description 13
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a crystalline silicon solar cell preparation technology, in particular to a preparation method of a PERC solar cell. It comprises the following steps: s1, cleaning and texturing the silicon wafer; s2, phosphorus diffusion; s3, removing phosphorosilicate glass and etching the back; s4, depositing a back passivation layer; s5, depositing a front silicon nitride film; s6, printing and drying the back electrode; s7, printing and drying aluminum paste on the back; s8, printing a front electrode; s9, sintering; and the paste used for the back electrode printing in step S6 is silver-aluminum paste. The method has the advantages of low cost, high battery conversion efficiency and high product qualification rate.
Description
Technical Field
The invention relates to a crystalline silicon solar cell preparation technology, in particular to a preparation method of a PERC solar cell.
Background
Local contact back Passivation (PERC) i.e. passivation of Emitter and back Cell technology, was first proposed in 1983 by Martin Green, a scientist in Australia, and is currently becoming the conventional technology for a new generation of solar cells.
PERC technology is used to improve the conversion efficiency by plating a passivation film on the back of the cell, the passivation film used inherently being mainly alumina (Al)2O3). In order to fully satisfy the back passivation condition, a layer of silicon nitride (SiN) is coated on the surface of the aluminum oxideX) To protect the back passivation film and to ensure the optical performance of the back of the cell. Therefore, Al is mostly adopted in the passivation layer on the back of the PERC battery at present2O3/SiNXA double-layer structure.
The passivation film is non-conductive and requires a back metal (aluminum or silver paste) to contact the silicon wafer in order to collect current. In the current design mode, a double-layer passivation film is punched through by laser, namely, a plurality of lines are scribed on the back surface by laser, a passivation layer in a scribing region is punched through to form a groove, aluminum paste is printed on the whole surface, the aluminum paste enters the groove and contacts a silicon wafer, and current is collected. The back silver is printed alone, does not penetrate the passivation film, and only functions when the assembly is soldered.
The preparation of the conventional PERC solar cell includes the following steps: cleaning a silicon wafer, texturing, phosphorus diffusion, removing phosphorosilicate glass, etching the back, depositing a back passivation layer, depositing a front silicon nitride film, performing laser grooving on the back, printing a back electrode, printing back aluminum paste, printing a front electrode and sintering.
This approach has problems:
(1) when the passivation layer is penetrated by high-energy laser, the silicon wafer can be damaged, the efficiency is reduced, and meanwhile, the damaged silicon wafer is easy to break.
(2) The aluminum paste is poured into the groove, the groove is difficult to completely fill, holes exist, and partial aluminum in the holes cannot be in contact with the silicon wafer or is in poor contact with the silicon wafer, so that the contact resistance is directly increased and the filling factor is directly reduced, and the conversion efficiency of the battery is reduced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the preparation method of the PERC solar cell is low in cost, high in cell conversion efficiency and high in product qualification rate.
The technical scheme adopted by the invention is as follows: a preparation method of a PERC solar cell comprises the following steps:
s1, cleaning and texturing the silicon wafer;
s2, phosphorus diffusion;
s3, removing phosphorosilicate glass and etching the back;
s4, depositing a back passivation layer;
s5, depositing a front silicon nitride film;
s6, printing and drying the back electrode;
s7, printing and drying aluminum paste on the back;
s8, printing a front electrode;
s9, sintering;
and the paste used for the back electrode printing in step S6 is silver-aluminum paste.
Preferably, the proportion of aluminum in the silver-aluminum paste is 4% -8%.
Preferably, the ratio of the area of the back electrode printed at step S6 to the total area of the back surface of the battery is 5% to 8%.
Preferably, the drying in step S6 is performed in an oven, and the oven is divided into a preheating space and a drying space, and the temperature of the preheating space is 154.5-157.5 ℃, and the temperature of the drying space is 195.7-241.5 ℃.
Preferably, the drying space is divided into six parts, and the temperature ranges are 216.3-220.5 ℃, 216.3-220.5 ℃, 236.9-241.5 ℃, 206-210 ℃ and 195.7-199.5 ℃.
Preferably, the sintering in step S9 is performed in a sintering furnace, and the sintering furnace is divided into a front-end drying area and a rear-end sintering area, the temperature range of the drying area is 210-352 ℃, and the temperature range of the sintering area is 315-774.3 ℃.
Preferably, the drying region is divided into six sections, and the temperatures thereof are 336-.
Preferably, the sintering region is divided into an upper temperature and a lower temperature, and the upper temperature region is divided into multiple sections, wherein the temperatures are 432.6-441 ℃, 463.5-472.5 ℃, 515-525 ℃, 638.6-651 ℃, 721-.
Compared with the prior art, the method has the following advantages that: (1) compared with the contact of the aluminum paste and the silicon wafer, the contact resistance is reduced by adopting the contact of the silver-aluminum paste and the silicon wafer, and the conversion efficiency of the battery is improved. (2) For the contact of simple silver thick liquid and aluminium thick liquid at the back, the contact resistance of silver-aluminium thick liquid and aluminium thick liquid is littleer, can effectively reduce series resistance, promotes battery conversion efficiency. (3) And the damage of laser to the silicon wafer is avoided. (4) The back laser grooving process is reduced, the investment of a laser and matched automatic equipment is reduced, and the production cost is reduced. (5) Because the number of the silicon wafers is reduced, the fragmentation rate is reduced, and the product percent of pass is improved.
And the proportion of silver and aluminum is controlled to be the same, so that the current can be well transmitted, and the alloy can be well formed with a silicon wafer.
By making the area of the back electrode in this ratio, it is possible to prevent a decrease in the open-circuit voltage and a decrease in the cell efficiency caused by too much printing.
After the back electrode is printed, the back electrode enters an oven to be dried, considering that silver-aluminum paste has a solid content which is changed relative to the silver paste, and aluminum powder is more difficult to dry relative to pure silver paste in the mixing process, so the drying temperature of the oven needs to be adjusted, and part of the temperature of each area is adjusted to reach the set temperature.
In order to ensure that the silver-aluminum paste and the aluminum paste are sintered better synchronously, the temperature of the drying area is slightly higher than that of the prior art, and the set temperature is reached.
Because the temperature of the silver-aluminum paste is lower than that of pure silver paste sintering, the temperature of the lower temperature area of the sintering area is slightly lower than that of the prior art, and meanwhile, the upper temperature area is correspondingly adjusted for integral compensation.
Drawings
Fig. 1 is a schematic diagram of a first stage in a process of manufacturing a PERC solar cell of the prior art.
FIG. 2 is a schematic diagram of a second stage of a prior art PERC solar cell fabrication process.
Fig. 3 is a schematic diagram of a third stage in the process of manufacturing a PERC solar cell of the prior art.
Fig. 4 is a schematic diagram of a first stage of the process for manufacturing the PERC solar cell according to the present invention.
FIG. 5 is a schematic diagram of a second stage of the PERC solar cell fabrication process of the present invention.
Fig. 6 is a schematic diagram of a third stage in the process of manufacturing the PERC solar cell of the present invention.
Detailed Description
The present invention will be further described below by way of specific embodiments, but the present invention is not limited to the following specific embodiments.
A method for manufacturing a PERC solar cell, as shown in fig. 4, 5 and 6, comprising the steps of:
s1, cleaning and texturing the silicon wafer;
s2, phosphorus diffusion;
s3, removing phosphorosilicate glass and etching the back;
s4, depositing a back passivation layer;
s5, depositing a front silicon nitride film; at this time, the back surface with two passivation layers, aluminum oxide and silicon nitride respectively, as shown in fig. 4 is formed;
s6, printing and drying the back electrode; the step is mainly to print a back electrode on a passivation layer, and because the back electrode adopts silver-aluminum paste as a material, the back electrode can burn through the passivation layer to reach a silicon wafer, wherein silver in the silver-aluminum paste is mainly used for transmitting current, aluminum in the silver-aluminum paste is mainly used for forming alloy with the silicon wafer, the contact resistance is reduced, the content of aluminum in the silver-aluminum paste is 4-8%, in the specific embodiment, the optimal proportion is 6%, silver in the silver-aluminum paste is used for transmitting current, and simultaneously, silver is also a composite center, if too much printing is carried out, the open-circuit voltage can be reduced, the battery efficiency is reduced, and therefore, the back pattern design for printing the silver-aluminum paste is as follows: the area of the silver-aluminum paste printed on the back surface is 5-8% of the total area of the battery, the distance between the auxiliary grid lines is 2-4 mm, and the width of the auxiliary grid lines is 0.07-0.15 mm; after the back electrode is printed, the back electrode enters an oven to be dried, considering that silver-aluminum paste has solid content which is changed relative to the silver paste and aluminum powder is harder to be dried relative to pure silver paste, the drying temperature of the oven needs to be adjusted up to 3% -5% compared with the drying temperature of the prior art, the oven of the prior art comprises a preheating space and a drying space, wherein the temperature of the preheating space is 150 ℃, the temperature of the drying space is six sections which are respectively 210 ℃, 230 ℃, 200 ℃ and 190 ℃, and after the temperature of the oven is adjusted up, the temperature of the preheating space is 154.5-157.5 ℃, the temperature of the six sections of the drying space is respectively 216.3-220.5 ℃, 216.3-220.5 ℃, 236.9-241.5 ℃, 206 ℃. 210 ℃ and 195.7-199.5 ℃;
s7, printing and drying aluminum paste on the back; this is basically the same as the prior art and is therefore not developed in detail here;
s8, printing a front electrode; this is basically the same as the prior art and is therefore not developed in detail here;
s9, sintering; the sintering is performed in a sintering furnace, and in order to achieve better synchronous sintering of the silver-aluminum paste and the aluminum paste, it is considered that the temperature of the front-end drying region of the sintering furnace is adjusted by 5% -10% compared with the prior art, and the temperatures of the front-end drying region of the prior art are 320 ℃, 300 ℃, 310 ℃, 290 ℃, 220 ℃ and 200 ℃, so in this embodiment, the temperature ranges of the six-stage drying region are 336-; the temperature of the silver-aluminum paste is lower than that of pure silver paste sintering, so that the back temperature (i.e. the lower temperature region) of the rear-end sintering region is reduced by 5-10% compared with the prior art, and the temperatures of the lower temperature regions of the prior art are 350 ℃, 450 ℃, 510 ℃, 640 ℃, 700 ℃, 815 ℃, 700 ℃ and 600 ℃, so that the temperature ranges of the lower temperature regions are 315-332.5 ℃, 405-427.5 ℃, 459-484.5 ℃, 576-608 ℃, 630-plus-minus 665 ℃, 733.5-774.3 ℃, 733.5-774.3 ℃, 733.5-774.3 ℃, 630-plus-minus 665 ℃ and 540-plus-minus-plus 570 ℃ respectively in this embodiment; in order to compensate the overall temperature, the temperature of the upper temperature region should be adjusted accordingly, so that the temperature of the upper temperature region needs to be adjusted up to 3% -5% compared with the prior art, and the temperature of the upper temperature region in the prior art is 420 ℃, 450 ℃, 500 ℃, 620 ℃, 700 ℃, 735 ℃, 700 ℃ and 610 ℃, so that the temperature of the upper temperature region in this embodiment is in the range of 432.6-441 ℃, 463.5-472.5 ℃, 515-525 ℃, 638.6-651 ℃, 721-.
Moreover, the method is suitable for single crystal and polycrystalline batteries with different sizes and different main grid numbers. The silicon chip side length is 156-210, and the main grid number is 5-12.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A preparation method of a PERC solar cell is characterized by comprising the following steps:
s1, cleaning and texturing the silicon wafer;
s2, phosphorus diffusion;
s3, removing phosphorosilicate glass and etching the back;
s4, depositing a back passivation layer;
s5, depositing a front silicon nitride film;
s6, printing and drying the back electrode;
s7, printing and drying aluminum paste on the back;
s8, printing a front electrode;
s9, sintering;
and the paste used for the back electrode printing in step S6 is silver-aluminum paste.
2. The method of claim 1, wherein the PERC solar cell comprises: the proportion of aluminum in the silver-aluminum paste is 4% -8%.
3. The method of claim 1, wherein the PERC solar cell comprises: the ratio of the area of the back electrode printed at step S6 to the total area of the back of the battery is 5% to 8%.
4. The method of claim 1, wherein the PERC solar cell comprises: the drying in the step S6 is performed in an oven, and the oven is divided into a preheating space and a drying space, and the temperature of the preheating space is 154.5-157.5 ℃, and the temperature of the drying space is 195.7-241.5 ℃.
5. The method of claim 4, wherein the PERC solar cell comprises: the drying space is divided into six parts, and the temperature ranges are 216.3-220.5 ℃, 216.3-220.5 ℃, 236.9-241.5 ℃, 206-210 ℃ and 195.7-199.5 ℃ respectively.
6. The method of claim 1, wherein the PERC solar cell comprises: the sintering in the step S9 is performed in a sintering furnace, and the sintering furnace is divided into a front-end drying area and a rear-end sintering area, the temperature range of the drying area is 210-352 ℃, and the temperature range of the sintering area is 315-774.3 ℃.
7. The method of claim 6, wherein the PERC solar cell comprises: the drying region is divided into six sections, and the temperatures are 336-.
8. The method of claim 6, wherein the PERC solar cell comprises: the sintering region is divided into an upper temperature and a lower temperature, and the upper temperature region is divided into a plurality of sections, wherein the temperatures are 432.6-441 ℃, 463.5-472.5 ℃, 515-525 ℃, 638.6-651 ℃, 721-735 ℃, 757.1-771.8 ℃, 757.1-771.8 ℃, 757.1-771.8 ℃, 721-735 ℃, and 628.3-640.5 ℃, and the temperatures of the lower temperature region are also a plurality of sections, wherein the temperatures are 315-332.5 ℃, 405-427.5 ℃, 459-484.5 ℃, 576-608 ℃, 630-665 ℃, 733.5-774.3 ℃, 733.5-774.3 ℃, 733.5-774.3 ℃, 630-665 ℃ and 540-570 ℃.
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| CN113284956A (en) * | 2021-04-08 | 2021-08-20 | 李铁 | Improved crystalline silicon solar cell printing process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293890A (en) * | 1996-04-26 | 1997-11-11 | Mitsubishi Electric Corp | Solar battery and manufacture thereof |
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| JPH09293890A (en) * | 1996-04-26 | 1997-11-11 | Mitsubishi Electric Corp | Solar battery and manufacture thereof |
| CN102185009A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Screen printing sintering method and system for crystalline silicon solar cell |
| CN103618009A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Silk-screen printing back passivation battery and preparation method thereof |
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| CN113284956A (en) * | 2021-04-08 | 2021-08-20 | 李铁 | Improved crystalline silicon solar cell printing process |
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