CN112186061A - Laminated solar cell with built-in optical filter - Google Patents

Laminated solar cell with built-in optical filter Download PDF

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CN112186061A
CN112186061A CN202010993684.5A CN202010993684A CN112186061A CN 112186061 A CN112186061 A CN 112186061A CN 202010993684 A CN202010993684 A CN 202010993684A CN 112186061 A CN112186061 A CN 112186061A
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cell
layer
solar cell
tandem solar
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兰东辰
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Shaoxing Microelectronics Research Center Of Zhejiang University
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Shaoxing Microelectronics Research Center Of Zhejiang University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687Multiple junction or tandem solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials

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Abstract

The invention relates to a solar cell, in particular to a photovoltaic power generation technology, which adopts a double-laminated cell structure, and a filter is arranged between sub-cell layers of each laminated cell, so that excessive photons can be reflected out of one laminated cell and absorbed by the other laminated cell, the photon generation current of the sub-cell of one laminated device is matched, the excessive photons can be utilized by the other laminated cell, and the spontaneous radiation on the back of the sub-cell is reflected back to the sub-cell, thereby improving the utilization of solar spectrum, reducing the requirement on reflection spectrum, lowering the cost and expanding the application range.

Description

Laminated solar cell with built-in optical filter
Technical Field
The present invention relates to a solar cell, and more particularly, to a tandem solar cell with a built-in filter.
Background
The most efficient solar cell commercialized at present is a monolithic tandem (monolithic solar cell) device, and the efficiency under the light-concentrating condition can reach 40%. Referring to fig. 1, fig. 1 is a schematic diagram of a typical commercial GaInP/GaInAs/Ge stacked cell, which is formed by stacking sub-cell layers made of GaInP, GaInAs and Ge material layers. Monolithic laminated cells are currently in widespread use.
However, there are two aspects of energy consumption for a single-sheet tandem solar cell: firstly, the method comprises the following steps: under a standard spectrum, the photogenerated current of each subcell (subell) in the tandem cell is different, wherein the excess photogenerated current of the subcell with the lowest band gap (lowest band-gap) is lost due to the serial connection of the subcells, as shown in fig. 1, photons in sunlight are absorbed by a GaInP layer, a GaInAs layer and a Ge layer according to energy, but the number of photons absorbed by the Ge layer is far more than that of the other two layers, so that the excess photogenerated current is generated, and the current is lost due to the serial connection of the three layers; secondly, the method comprises the following steps: the back-side emission of the wide bandgap layer is absorbed by the adjacent narrow bandgap layer (this is known as radiative coupling), causing voltage loss in the device. Furthermore, producing monolithic stacked cells requires lattice matching (lattice matching) between each subcell, which limits the choice of each subcell bandgap, meaning that practical difficulties are encountered in achieving photocurrent matching by adjusting only the subcell bandgap. The essential reason for the mismatch of the photo-generated current generated by each sub-cell is that the band gap of the material of each sub-cell is not optimized, which is limited by the lattice matching of each layer material required by the stacked cell manufacturing.
Disclosure of Invention
The present invention provides a tandem solar cell with a built-in filter, comprising: the solar cell module comprises a first tandem solar cell and a second tandem solar cell, wherein the first tandem solar cell comprises a first substrate and a plurality of sub-cell layers formed on the first substrate, and an optical filter layer is formed between every two adjacent sub-cell layers; the second tandem solar cell includes a second substrate and a plurality of sub-cell layers formed on the second substrate, wherein an optical filter layer is formed between every two adjacent sub-cell layers.
Furthermore, the first tandem solar cell is used for receiving sunlight and absorbing photons with higher energy in the sunlight, and the surplus photons are reflected out of the first tandem solar cell by the filter layer in the first tandem solar cell and absorbed by the second tandem solar cell.
Furthermore, the band gaps of the sub-cell layers of the plurality of sub-cell layers in the first laminated solar cell are sequentially reduced from the position far away from the first substrate to the position close to the first substrate; the band gaps of the sub-cell layers of the plurality of sub-cell layers in the second tandem solar cell are sequentially reduced from the position far away from the second substrate to the position close to the second substrate.
Furthermore, the sub-cell layer in the first laminated solar cell transmits light of a spectrum window matched with the sub-cell layer to the adjacent sub-cell layer with narrow band gap, self-luminescence on the back surface of each sub-cell layer is reflected back to the inside of each sub-cell layer for re-absorption, and meanwhile, redundant light is guided out of the first laminated solar cell for being absorbed by the second laminated solar cell, wherein the back surface of the sub-cell layer is the surface opposite to the surface, receiving light, of the sub-cell layer.
Furthermore, the filter layer is an optical structure layer.
Further, the filter layer is a distributed bragg mirror.
Further, the filter layer is a bragg film having a certain spectral window.
Furthermore, the first tandem solar cell comprises a first sub-cell layer formed on the first substrate, a second sub-cell layer formed on the first sub-cell layer, and a third sub-cell layer formed on the second sub-cell layer, wherein a first filter layer is formed between the first sub-cell layer and the second sub-cell layer, a second filter layer is formed between the second sub-cell layer and the third sub-cell layer, and the band gaps of the third sub-cell layer, the second sub-cell layer and the first sub-cell layer are sequentially reduced; the second tandem solar cell comprises a fourth sub-cell layer formed on the second substrate, a fifth sub-cell layer formed on the fourth sub-cell layer, a sixth sub-cell layer formed on the fifth sub-cell layer, a third filter layer formed between the fourth sub-cell layer and the fifth sub-cell layer, a fourth filter layer formed between the fifth sub-cell layer and the sixth sub-cell layer, and band gaps of the sixth sub-cell layer, the fifth sub-cell layer and the fourth sub-cell layer are sequentially reduced.
Furthermore, the material of the first substrate is GaAs, the material of the first sub-cell layer is GaAs, and the material of the second sub-cell layer is Al0.22Ga0.78As, the material of the third sub-battery layer is Al0.18Ga0.34In0.48P; the material of the second substrate is InP, and the material of the fourth sub-cell is Ga0.43In0.57As, the material of the fifth sub-cell layer is Ga0.25In0.75P0.41As0.59Material of sixth subcell layerIs Ga0.11In0.89P0.74As0.26
Further, the band gap width of the first sub-cell layer is 1.40eV, the band gap width of the second sub-cell layer is 1.71eV, and the band gap width of the third sub-cell layer is 2.134 eV; the band gap width of the fourth sub-cell layer was 0.73eV, the band gap width of the fifth sub-cell layer was 0.961eV, and the band gap width of the sixth sub-cell layer was 1.165 eV.
Therefore, the solar cell adopts a double-laminated cell structure, and the filter is arranged between the sub-cell layers of each laminated cell, so that the excessive photons can be reflected out of one laminated cell and absorbed by the other laminated cell, the photo-generated current of the sub-cell of the laminated device is matched, the excessive photons can be utilized by the other laminated cell, and the spontaneous radiation on the back of the sub-cell is reflected back to the sub-cell, so that the utilization of the solar spectrum can be improved, the requirement on the reflection spectrum can be reduced, the cost can be reduced, and the application range can be enlarged.
Drawings
FIG. 1 is a schematic diagram of a typical commercial GaInP/GaInAs/Ge stacked cell.
Fig. 2 is a schematic structural diagram of a stacked solar cell with a built-in filter according to an embodiment of the invention.
Fig. 3 is a schematic light-splitting diagram of a tandem solar cell with a built-in filter according to an embodiment of the invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and the same reference numerals denote the same elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms such as "under …", "under …", "under …"),
"above …", "above", etc., may be used herein for convenience of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In an embodiment of the present invention, a stacked solar cell with a built-in optical filter is provided, referring to fig. 2, which is a schematic structural diagram of a stacked solar cell with a built-in optical filter according to an embodiment of the present invention, the stacked solar cell with a built-in optical filter according to an embodiment of the present invention includes: the first tandem solar cell 100 includes a first substrate 110 and a plurality of sub-cell layers (e.g., 121,122, and 123) formed on the first substrate 110, wherein an optical filter layer (131 and 132) is formed between each adjacent two of the sub-cell layers, and the second tandem solar cell 200 includes a second substrate 210 and a plurality of sub-cell layers (e.g., 221,222, and 223) formed on the second substrate 210, wherein an optical filter layer (231 and 232) is formed between each adjacent two of the sub-cell layers.
Referring to fig. 2, the first tandem solar cell 100 is used for receiving sunlight, absorbing photons with higher energy in the sunlight, and the excess photons are reflected by the filter layers (131 and 132) in the first tandem solar cell 100 out of the first tandem solar cell 100 and absorbed by the second tandem solar cell 200.
Referring to fig. 2, the bandgaps of the sub-cell layers (e.g., 121,122, and 123) in the first tandem solar cell 100 decrease sequentially from the side away from the first substrate 110 to the side close to the first substrate 110, and referring to fig. 3, fig. 3 is a schematic diagram illustrating a tandem solar cell with a built-in optical filter according to an embodiment of the present invention, and as shown in fig. 3, the sub-cell layers transmit light with a matching spectral window and reach the adjacent sub-cell layers with a narrow bandgap, reflect self-luminescence from the back of each sub-cell layer back to the inside of the sub-cell layer for re-absorption, and guide the unwanted light (i.e., light shown by a line 400) out of the first tandem solar cell 100 for absorption by the second tandem solar cell 200, wherein the back of the sub-cell layer is the side opposite to the side where the sub-cell layer receives light. Referring to fig. 2, in the same structure as the first tandem solar cell 100, the bandgaps of the subcell layers (e.g., 221,222 and 223) in the second tandem solar cell 200 decrease sequentially from the second substrate 210 to the successive subcell layers close to the second substrate 210.
In one embodiment, the filter layer (131, 132, 231, and 232) is an optical structure layer, specifically, a distributed bragg mirror. More specifically, it is a bragg film having a certain spectral window. The industry has the ability to grow such optical structures on the back side of the subcell layer and the spectral windows of the filter layers (131, 132, 231, and 232) can be achieved by adjusting the thickness and refractive index of each of the bragg films.
In one embodiment, as shown in fig. 2, the first tandem solar cell 100 includes a first sub-cell layer 121 formed on the first substrate 110, a second sub-cell layer 122 formed on the first sub-cell layer 121, and a third sub-cell layer 123 formed on the second sub-cell layer 122, wherein a first filter layer 131 is formed between the first sub-cell layer 121 and the second sub-cell layer 122, a second filter layer 132 is formed between the second sub-cell layer 122 and the third sub-cell layer 123, and band gaps of the third sub-cell layer 123, the second sub-cell layer 122, and the first sub-cell layer 121 are sequentially decreased; similarly, the second tandem solar cell 200 includes a fourth sub-cell layer 221 formed on the second substrate 210, a fifth sub-cell layer 222 formed on the fourth sub-cell layer 221, and a sixth sub-cell layer 223 formed on the fifth sub-cell layer 222, wherein a third filter layer 231 is formed between the fourth sub-cell layer 221 and the fifth sub-cell layer 222, a fourth filter layer 233 is formed between the fifth sub-cell layer 222 and the sixth sub-cell layer 223, and band gaps of the sixth sub-cell layer 223, the fifth sub-cell layer 222, and the fourth sub-cell layer 221 are sequentially decreased. More specifically, in one embodiment, the material of the first substrate 110 is GaAs, the first sub-substrateThe material of the cell layer 121 is GaAs, and the material of the second sub-cell layer 122 is Al0.22Ga0.78As, the material of the third sub-cell layer 123 is Al0.18Ga0.34In0.48And P. More specifically, in one embodiment, the material of the second substrate 210 is InP, and the material of the fourth subcell layer 221 is Ga0.43In0.57As, Ga is the material of the fifth sub-cell layer 2220.25In0.75P0.41As0.59The material of the sixth subcell layer 123 is Ga0.11In0.89P0.74As0.26. More specifically, in one embodiment, the band gap width of the first sub-cell layer 121 is 1.40eV, the band gap width of the second sub-cell layer 122 is 1.71eV, and the band gap width of the third sub-cell layer 123 is 2.134 eV. More specifically, in one embodiment, the band gap width of the fourth sub-cell layer 221 is 0.73eV, the band gap width of the fifth sub-cell layer 222 is 0.961eV, and the fourth sub-cell layer
The band gap width of the hexagonal cell layer 123 was 1.165 eV.
In an embodiment, the subcells within the first tandem solar cell 100 and the second tandem solar cell 200 are connected in series.
The optical filter is arranged between adjacent sub-battery layers, and the surplus photons are reflected out of one laminated battery and absorbed by the other laminated battery, so that the photo-generated current of the sub-battery in the laminated battery is matched, the surplus photons can be utilized by the other laminated battery, and the spontaneous radiation on the back surface of the sub-battery is reflected back to the sub-battery, so that the effect of double carving by one arrow is achieved. In addition, the structure of the invention not only can improve the utilization of solar spectrum, but also can reduce the requirement on reflection spectrum, thereby reducing the number of Bragg film layers required by the built-in optical filter, which is beneficial to reducing the production cost; two laminated cells in the system are relatively independent, can well resist the influence brought by solar spectrum change, and have important practical significance. In addition, a proper absorption material can be selected for each section of the sub-battery, and the actual efficiency of the new generation of spectral devices can reach 51.7 percent at most under the condition of 500 times of light concentration based on the practical evaluation of the existing manufacturing process. The realization of such high photoelectric conversion efficiency is very important for space application. In addition, with the continuous emergence of low-cost new materials, each section of the sub-battery (mainly a III-V group material at present) in the design scheme is gradually replaced by a low-cost absorption material one by one, and finally, civil use with ultrahigh efficiency and low cost is realized.
In addition, a laminated cell is used for absorbing photons with higher energy in sunlight, wherein the material lattice of each layer is matched, the photogenerated current is also matched under the 1.5AM standard spectrum, a Bragg film is embedded between two adjacent layers, the photons penetrating through a proper spectrum window are absorbed by the adjacent narrow bandgap layer, a part of light is reflected, and the redundant light is absorbed by another laminated photovoltaic device. The other stacked device is constructed similarly to a stack, i.e. each layer is lattice matched to the photo-generated current, but the embedded bragg films are only used to reflect the spontaneous radiation of each layer back to the corresponding layer, thereby increasing the operating voltage of each layer of sub-cell. The built-in filter is a bragg film with a proper spectrum window, and in addition to allowing light with a proper spectrum window to pass through and reach the adjacent narrow bandgap layer, the built-in filter also can reflect the self-luminescence on the back surface of each layer of the sub-cell back to the inside of the corresponding layer for reabsorption, and simultaneously guides the redundant light out for being absorbed by another laminated cell.
As described above, the solar cell of the present invention adopts a dual-stacked cell structure, and the optical filter is disposed between the sub-cell layers of each stacked cell, so that the excess photons can be reflected out of one stacked cell and absorbed by the other stacked cell, which enables the photo-generated current of the sub-cell of one stacked device to be matched and the excess photons to be utilized by the other stacked cell, and further reflects the spontaneous radiation from the back of the sub-cell back to the sub-cell, thereby improving the utilization of the solar spectrum, reducing the requirement on the reflection spectrum, lowering the cost, and expanding the application range.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A laminated solar cell with an internal filter, comprising: the solar cell module comprises a first tandem solar cell and a second tandem solar cell, wherein the first tandem solar cell comprises a first substrate and a plurality of sub-cell layers formed on the first substrate, and an optical filter layer is formed between every two adjacent sub-cell layers; the second tandem solar cell includes a second substrate and a plurality of sub-cell layers formed on the second substrate, wherein an optical filter layer is formed between every two adjacent sub-cell layers.
2. The filter-built-in tandem solar cell according to claim 1, wherein the first tandem solar cell is configured to receive sunlight, absorb higher energy photons of the sunlight, and excess photons are reflected off the first tandem solar cell by the filter layer in the first tandem solar cell and absorbed by the second tandem solar cell.
3. The filter-built-in tandem solar cell according to claim 1, wherein the band gap of the sub-cell layers in the first tandem solar cell decreases sequentially from the first substrate to the order close to the first substrate; the band gaps of the sub-cell layers of the plurality of sub-cell layers in the second tandem solar cell are sequentially reduced from the position far away from the second substrate to the position close to the second substrate.
4. The filter-built-in tandem solar cell according to claim 3, wherein the sub-cell layer in the first tandem solar cell transmits light in the spectral window matching the sub-cell layer to the adjacent sub-cell layer with narrow band gap, and reflects the self-luminescence from the back of each sub-cell layer back to the inside of the sub-cell layer for re-absorption, and guides the excess light out of the first tandem solar cell for absorption by the second tandem solar cell, wherein the back of the sub-cell layer is opposite to the side of the sub-cell layer receiving light.
5. The filter-in laminated solar cell of claim 1, wherein the filter layer is an optical structure layer.
6. The filter-built-in tandem solar cell according to claim 5, wherein the filter layer is a distributed Bragg reflector.
7. The filter-built-in tandem solar cell according to claim 6, wherein the filter layer is a Bragg film having a certain spectral window.
8. The filter-built-in tandem solar cell according to claim 1, wherein the first tandem solar cell includes a first sub-cell layer formed on the first substrate, a second sub-cell layer formed on the first sub-cell layer, a third sub-cell layer formed on the second sub-cell layer, and the first filter layer is formed between the first sub-cell layer and the second sub-cell layer, and the second filter layer is formed between the second sub-cell layer and the third sub-cell layer, and band gaps of the third sub-cell layer, the second sub-cell layer, and the first sub-cell layer are sequentially decreased; the second tandem solar cell comprises a fourth sub-cell layer formed on the second substrate, a fifth sub-cell layer formed on the fourth sub-cell layer, a sixth sub-cell layer formed on the fifth sub-cell layer, a third filter layer formed between the fourth sub-cell layer and the fifth sub-cell layer, a fourth filter layer formed between the fifth sub-cell layer and the sixth sub-cell layer, and band gaps of the sixth sub-cell layer, the fifth sub-cell layer and the fourth sub-cell layer are sequentially reduced.
9. The filter-built-in tandem solar cell according to claim 8, wherein the material of the first substrate is GaAs, the material of the first subcell layer is GaAs, and the material of the second subcell layer is Al0.22Ga0.78As, the material of the third sub-battery layer is Al0.18Ga0.34In0.48P; the material of the second substrate is InP,the material of the fourth sub-battery is Ga0.43In0.57As, the material of the fifth sub-cell layer is Ga0.25In0.75P0.41As0.59The material of the sixth sub-battery layer is Ga0.11In0.89P0.74As0.26
10. The filter-built-in tandem solar cell according to claim 8, wherein the first subcell layer has a band gap width of 1.40eV, the second subcell layer has a band gap width of 1.71eV, and the third subcell layer has a band gap width of 2.134 eV; the band gap width of the fourth sub-cell layer was 0.73eV, the band gap width of the fifth sub-cell layer was 0.961eV, and the band gap width of the sixth sub-cell layer was 1.165 eV.
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