CN112185432B - Temperature control type solid state disk applied to low-temperature environment and temperature control method - Google Patents
Temperature control type solid state disk applied to low-temperature environment and temperature control method Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B33/00—Constructional parts, details or accessories not provided for in the other groups of this subclass
- G11B33/14—Reducing influence of physical parameters, e.g. temperature change, moisture, dust
- G11B33/1406—Reducing the influence of the temperature
- G11B33/144—Reducing the influence of the temperature by detection, control, regulation of the temperature
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/3058—Monitoring arrangements for monitoring environmental properties or parameters of the computing system or of the computing system component, e.g. monitoring of power, currents, temperature, humidity, position, vibrations
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The invention discloses a temperature control type solid state hard disk applied to a low-temperature environment, which comprises a shell, wherein a main board is arranged in the shell, a main control unit, a single chip microcomputer and a heating control circuit are arranged on the main board, a temperature sensor is arranged in the main control unit, an electric heating device is attached to the surface of the main control unit, the main control unit collects the environment temperature through the temperature sensor, and sends an electrifying signal to the single chip microcomputer when the environment temperature is lower than a preset temperature value, the single chip microcomputer sends a heating instruction to the heating control circuit according to the electrifying signal, the heating control circuit controls the electric heating device to be electrified and heated until the environment temperature collected by the temperature sensor is higher than the preset temperature value, the main control unit sends a power-down signal to the single chip microcomputer, the single chip microcomputer sends a stopping instruction to the heating control circuit according to the power-down signal, and the heating control circuit controls the electric heating device to stop heating. The invention can automatically realize temperature control, has high heating efficiency and can stably run in a low-temperature environment.
Description
Technical Field
The invention relates to a solid state disk, in particular to a temperature control type solid state disk applied to a low-temperature environment and a temperature control method.
Background
The solid state disk can be applied to various fields and various devices, so that the application environment is also diversified. In the prior art, the solid state disk is obviously influenced by the ambient temperature, and particularly in a low-temperature environment below minus 40 ℃, the solid state disk is difficult to exert the storage performance, so that the working state of equipment is influenced.
In the current storage industry, the industrial-grade wide temperature range of the solid state disk can be kept to be between-40 ℃ and +85 ℃ for stable operation, the military-grade requirement is that the solid state disk can be stably operated between-55 ℃ and +125 ℃, but the flash memory grade has difference in low temperature environment, continuous screening is needed when the solid state disk can be stably operated at the temperature of-55 ℃ according to the military-grade standard, and the labor cost is continuously increased along with the increase of time.
In order to facilitate popularization and application of the solid state disk, whether the solid state disk can stably operate in a low-temperature environment or not is not considered in common solid state disks in the market, and some products increase the heat productivity of the board by using the resistance and the capacitance of a circuit, but the mode greatly affects the overall performance of the board, can increase the power consumption and directly affects the service life of electronic products.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a temperature-controlled solid-state hard disk and a temperature control method, which can automatically implement temperature control, have high heating efficiency, and can stably operate in a low-temperature environment, in view of the defects of the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme.
The utility model provides a be applied to control by temperature change formula solid state hard drives of low temperature environment, its includes the casing, be equipped with the mainboard in the casing, be equipped with main control unit, singlechip and heating control circuit on the mainboard, the main control unit embeds there is temperature sensor, the surface laminating of main control unit has electric heating device, the main control unit with the singlechip is connected, heating control circuit with the singlechip is connected, just heating control circuit is used for controlling electric heating device's power-on state, the main control unit passes through temperature sensor gathers ambient temperature to when ambient temperature is less than the preset temperature value, to a power-on signal is sent to the singlechip, the singlechip according to power-on signal to heating control circuit sends heating instruction, borrows by heating control circuit control electric heating device goes up the electricity and heats, until the ambient temperature that temperature sensor gathered is higher than the preset temperature value, the main control unit to a power down signal is sent to the singlechip, the singlechip according to the power down signal heating control circuit send stop instruction, borrow by heating control circuit control device stops heating.
Preferably, when the single chip microcomputer receives a power-down signal sent by the main control unit and the electric heating device stops heating, the single chip microcomputer enters a low-power-consumption working state.
Preferably, the electric heating device is a silicon rubber electric heating film, and the electric heating device covers the surface of the main control unit.
Preferably, a cache unit and a flash memory unit are arranged on the main board, and the electric heating device is attached to the surfaces of the cache unit and the flash memory unit.
Preferably, the heating control circuit comprises a booster circuit, and the booster circuit is used for loading voltage to the electric heating device according to a heating instruction sent by the single chip microcomputer.
Preferably, the chip model of the main control unit is SM2246EN.
A temperature control method of a solid state disk comprises a shell, a main board is arranged in the shell, a main control unit, a single chip microcomputer and a heating control circuit are arranged on the main board, a temperature sensor is arranged in the main control unit, an electric heating device is attached to the surface of the main control unit, the main control unit is connected with the single chip microcomputer, the heating control circuit is used for controlling the power-on state of the electric heating device, and the temperature control method comprises the following steps: s1, the main control unit collects the ambient temperature in real time through the temperature sensor; s2, the main control unit judges whether the environmental temperature acquired by the temperature sensor is lower than a preset temperature value, if so, the step S3 is executed, and if not, the step S1 is returned; s3, the main control unit sends a power-on signal to the singlechip; s4, the single chip microcomputer sends a heating instruction to the heating control circuit according to the electrifying signal, and the heating control circuit controls the electric heating device to be electrified and heated; step S5, the main control unit judges whether the environmental temperature acquired by the temperature sensor is higher than a preset temperature value, if so, the step S6 is executed, and if not, the step S4 is returned; s6, the main control unit sends a power-down signal to the single chip microcomputer; s7, the single chip microcomputer sends a stop instruction to the heating control circuit according to the power failure signal, and the heating control circuit controls the electric heating device to stop heating; step S1 to step S7 are repeatedly performed.
Preferably, in the step S2, the preset temperature value is-40 ℃.
Preferably, in step S7, after the single chip microcomputer receives the power-down signal sent by the main control unit and the electric heating device stops heating, the single chip microcomputer enters a low-power-consumption working state.
Preferably, after the electric heating device stops heating, if the single chip microcomputer does not receive a power-on signal sent by the main control unit within a preset time, the single chip microcomputer enters a low-power-consumption working state.
The invention discloses a temperature control type solid state disk applied to a low-temperature environment, wherein a main control unit collects the ambient temperature in real time through a temperature sensor in the working process, simultaneously judges whether the ambient temperature collected by the temperature sensor is lower than a preset temperature value, if not, the temperature collection is repeated, if yes, the main control unit sends a power-on signal to a single chip microcomputer, the single chip microcomputer sends a heating instruction to a heating control circuit according to the power-on signal so as to control an electric heating device to be electrically heated, in the heating process, the main control unit judges whether the ambient temperature collected by the temperature sensor is higher than the preset temperature value, if not, the main control unit continuously heats, if yes, the main control unit sends a power-off signal to the single chip microcomputer, the single chip microcomputer sends a stop instruction to the heating control circuit according to the power-off signal so as to control the electric heating device to stop heating, and the process is repeated, so that the main control unit continuously works in the proper temperature environment. Compared with the prior art, the solid state disk can automatically realize temperature control, and meanwhile, the electric heating device is attached to the surface of the main control unit, so that the heat conduction capability is improved, the heating efficiency is greatly improved, and the solid state disk can stably run in a low-temperature environment better.
Drawings
Fig. 1 is a schematic diagram of an internal structure of a solid state disk according to a first embodiment of the present invention;
fig. 2 is an exploded view of a solid state disk according to a first embodiment of the invention;
FIG. 3 is a block diagram of the main control unit;
FIG. 4 is a schematic diagram of a single chip microcomputer and peripheral circuits thereof;
FIG. 5 is a schematic diagram of a boost circuit;
FIG. 6 is a flow chart of the temperature control method of the present invention;
fig. 7 is a schematic diagram of an internal structure of a solid state disk according to a second embodiment of the present invention;
fig. 8 is a schematic diagram of an internal structure of a solid state disk according to a third embodiment of the present invention.
Detailed Description
The invention is described in more detail below with reference to the figures and examples.
Example one
This embodiment has proposed a control by temperature change formula solid state hard drives for low temperature environment, it is shown with fig. 1 to fig. 6 that combines, it is including casing 1, be equipped with the mainboard in the casing 1, be equipped with main control unit 2, singlechip 3 and heating control circuit 5 on the mainboard, main control unit 2 embeds there is temperature sensor 4, main control unit 2's surface laminating has electric heating element 6, main control unit 2 with singlechip 3 is connected, heating control circuit 5 with singlechip 3 is connected, just heating control circuit 5 is used for controlling the power-on state of electric heating element 6, main control unit 2 passes through temperature sensor 4 gathers ambient temperature to when ambient temperature is less than the preset temperature value, to singlechip 3 sends a power-on signal, singlechip 3 basis power-on signal to heating control circuit 5 sends the heating instruction, borrow by heating control circuit 5 control electric heating element 6 power-on heating, until the ambient temperature that temperature sensor 4 gathered is higher than the preset temperature value, main control unit 2 to singlechip 3 sends a power down signal, singlechip 3 according to power down signal to heating control circuit 5 sends the instruction, heating control circuit stops heating control circuit 5 borrows heating control circuit 6 and stops heating element.
In the solid state disk, the main control unit 2 collects the ambient temperature in real time through the temperature sensor 4 in the working process, simultaneously judges whether the ambient temperature collected by the temperature sensor 4 is lower than a preset temperature value, if not, the temperature collection is repeated, if yes, the main control unit 2 sends a power-on signal to the single chip microcomputer 3, the single chip microcomputer 3 sends a heating instruction to the heating control circuit 5 according to the power-on signal, and then controls the electric heating device 6 to be powered on and heated, in the heating process, the main control unit 2 judges whether the ambient temperature collected by the temperature sensor 4 is higher than the preset temperature value, if not, the heating is continuously carried out, if yes, the main control unit 2 sends a power-off signal to the single chip microcomputer 3, the single chip microcomputer 3 sends a stop instruction to the heating control circuit 5 according to the power-off signal, and then controls the electric heating device 6 to stop heating, and the process is repeated, so that the main control unit 2 continuously works in a proper temperature environment. Compared with the prior art, the solid state disk can automatically realize temperature control, and meanwhile, the electric heating device 6 is attached to the surface of the main control unit 2, so that the heat conduction capability is improved, the heating efficiency is greatly improved, and the solid state disk can stably run in a low-temperature environment better.
In order to reduce the power consumption of the hard disk, in this embodiment, after the single chip microcomputer 3 receives a power-down signal sent by the main control unit 2 and the electric heating device 6 stops heating, the single chip microcomputer 3 enters a low-power-consumption working state.
As a preferred mode, the electric heating device 6 is a silicon rubber electric heating film, and the electric heating device 6 covers the surface of the main control unit 2. The preferred silicon rubber electric heat membrane that adopts of this embodiment, this silicon rubber electric heat membrane can more closely with 2 laminating of main control unit can carry out the heat conduction more directly simultaneously. In addition, the film layer structure does not occupy space and is easy to lay.
In this embodiment, the electric heating device 6 is attached to the main control unit 2 on the main board 20 and then installed in the casing 1 formed by the upper casing 10 and the lower casing 11.
In this embodiment, the main board is provided with a cache unit 7 and a flash memory unit 8, and the electric heating device 6 is attached to the surfaces of the cache unit 7 and the flash memory unit 8.
In order to provide sufficient heating voltage to the electric heating device 6, in this embodiment, referring to fig. 5, the heating control circuit 5 includes a voltage boost circuit 50, and the voltage boost circuit 50 is configured to apply voltage to the electric heating device 6 according to a heating instruction sent by the single chip microcomputer 3.
As a preferred mode, the chip model of the main control unit 2 is SM2246EN. The chip of this model is because of built-in having temperature sensor, consequently need not to dispose independent temperature sensor in addition in the hard disk box, and the temperature data that this temperature sensor gathered is handled by main control unit 2 moreover, does not occupy the singlechip resource, makes the singlechip can get into the low-power consumption mode under unheated state.
In this embodiment, for the working principle of the boosting process, please refer to the following application examples: firstly, the master of the SM2246EN has a temperature sensor, when the temperature reaches-40 ℃, the temperature sensor of the master can transmit a signal to the single chip, the SPL _ CLK in the single chip provides a time sequence interface, the command, address or input data is locked at the rising edge of the clock input, and the output data is shifted out of the falling edge of the clock input. The CSN network in CE # starts the chip, which is enabled by a high-to-low transition on CE #. The CE # must be kept low for the duration of any command sequence. The network MOSI of the SI is a serial data input, serially transmitting commands, addresses or data into the device. The input is locked at the rising edge of the serial clock. The network MISO of the SO is a serial data output that transfers data from the device in a serial manner. The data is shifted out at the falling edge of the serial clock. The boost IC is directly controlled by the pulse of the single chip microcomputer to boost to 10V from 5V and then acts on two ends of the electric heating film to realize the effect of low-temperature heating. In this embodiment, the basic principle of the circuit boosting circuit is to change the current in the circuit, generate an electromotive force, i.e., a voltage, on the inductor, and then increase the voltage at the output terminal by superimposing the electromotive force on the original voltage.
In order to better describe the technical solution of the present invention, this embodiment further relates to a temperature control method, please refer to fig. 1 to fig. 6, where the solid state disk includes a housing 1, a main board is disposed in the housing 1, the main board is provided with a main control unit 2, a single chip microcomputer 3 and a heating control circuit 5, a temperature sensor 4 is disposed in the main control unit 2, an electric heating device 6 is attached to a surface of the main control unit 2, the main control unit 2 is connected to the single chip microcomputer 3, the heating control circuit 5 is connected to the single chip microcomputer 3, and the heating control circuit 5 is configured to control a power-on state of the electric heating device 6, and the temperature control method includes the following steps:
step S1, the main control unit 2 collects the ambient temperature in real time through the temperature sensor 4;
step S2, the main control unit 2 judges whether the environmental temperature acquired by the temperature sensor 4 is lower than a preset temperature value, if so, the step S3 is executed, and if not, the step S1 is returned;
s3, the main control unit 2 sends a power-on signal to the singlechip 3;
s4, the single chip microcomputer 3 sends a heating instruction to the heating control circuit 5 according to the electrifying signal, and the heating control circuit 5 controls the electric heating device 6 to be electrified and heated;
step S6, the main control unit 2 sends a power-down signal to the singlechip 3;
s7, the single chip microcomputer 3 sends a stop instruction to the heating control circuit 5 according to the power failure signal, and the heating control circuit 5 controls the electric heating device 6 to stop heating;
step S1 to step S7 are repeatedly performed.
As a preferable threshold setting, in step S2 of this embodiment, the preset temperature value is-40 ℃.
In this embodiment, in step S7, after the single chip microcomputer 3 receives the power-down signal sent by the main control unit 2 and the electric heating device 6 stops heating, the single chip microcomputer 3 enters a low power consumption operating state.
Further, after the electric heating device 6 stops heating, if the single chip microcomputer 3 does not receive the power-on signal sent by the main control unit 2 within a preset time, the single chip microcomputer 3 enters a low-power-consumption working state. In the above steps, the single chip microcomputer 3 needs to enter a low power consumption working state after being delayed, so as to avoid the repeated switching of the single chip microcomputer 3 between high power consumption and low power consumption in a short time, and prevent adverse effects.
Example two
The difference between the first embodiment and the second embodiment is that, referring to fig. 7, the electric heating device 6 includes a semiconductor cooling plate 60, and a hot end of the semiconductor cooling plate 60 is attached to the main control unit 2, so as to conduct heat to the main control unit 2. The present embodiment has advantages in that it generates heat rapidly, is small and small, and occupies no space, and thus can be applied to the present invention as an alternative.
Further, the surface of the main control unit 2 is provided with a plurality of semiconductor cooling fins 60 to improve the heating efficiency.
EXAMPLE III
The difference between the present embodiment and the first embodiment is that, referring to fig. 8, in the present embodiment, the electric heating device 6 is a silicon rubber electric heating film, the outer side of the main board 20 is covered with a heat insulation rubber bag 61, the edge of the electric heating device 6 is fixedly connected with the edge of the heat insulation rubber bag 61, a heat insulation cavity 62 is formed by combining the heat insulation rubber bag 61 and the electric heating device 6, and the main board 20 and the main control unit 2 are disposed in the heat insulation cavity 62.
In the structure, the electric heating device 6 with on the basis that the main control unit 2 was laminated each other, a thermal-insulated sack 61 has been add, utilize thermal-insulated sack 61 with the combination of electric heating device 6 forms thermal-insulated chamber 62, and will mainboard 20 and main control unit 2 hold in within the thermal-insulated chamber 62, electric heating device 6 to the thermal-insulated in-process of main control unit 2 transmission heat can make the temperature rise thereupon in the thermal-insulated chamber 62 can avoid the heat outwards to distribute under the effect of thermal-insulated sack 61 for the temperature rise efficiency is higher, and it is better to keep warm the effect, also can avoid the singlechip to be awaken up repeatedly, thereby works in the low-power consumption state longer.
Further, the heat insulation rubber bag 61 may be an ultra-thin soft bag made of silica gel. The heat-insulating rubber bag 61 may be provided with holes or the like for allowing screws or the like to pass through.
The embodiment has the advantage of having the heat preservation effect, so the constant temperature effect is better, can regard as the alternative of embodiment one to use.
In the above embodiments, reference may be made to the following contents for selection of the electric heating film: traditional electric heat membrane mainly used building trade, the effect is concealed heating system, buries the electric heat membrane below wall or floor, and cold winter just can be for the space heating after the circular telegram. The working principle of the electric heating film is as follows: the method comprises the steps of uniformly coating a conductive material on an insulating material substrate to form an organic conductive film, and applying voltage to two ends of the conductive film, wherein the conductive layer is actually a layer of semiconductor and converts electric energy into heat energy. About electric heat membrane classification: according to different packaging materials of the electrothermal film, the electrothermal film can be divided into a metal electrothermal film, an inorganic electrothermal film (including a carbon fiber electrothermal film, an ink electrothermal film and the like) and a polymer electrothermal film. The invention adopts a macromolecule electric heating film, which is characterized in that conductive particles are added into organic materials, the organic materials are processed into film materials and then packaged, or some conductive materials are evenly coated on an insulating material substrate to finally prepare an organic conductive film which is then packaged by macromolecule insulating materials. The invention relates to a device and a method capable of controlling temperature, heating and raising temperature in a low-temperature environment, in particular to a silicon rubber heating film in a high-molecular electrothermal film, wherein a secondary insulating material can resist the high temperature of 300 ℃ at most, the highest service temperature is 250 ℃, the insulation resistance is more than or equal to 200 MOmega, and the voltage range is adjustable within 1.5-380V.
Compared with the prior art, the temperature control type solid state disk applied to the low-temperature environment and the temperature control method have the advantages that under the low-temperature condition, the single chip microcomputer control circuit is utilized to load required voltage to two ends of the electric heating film, and the electric conduction layer of the electric heating film is actually a layer of semiconductor, so that electric energy is converted into heat energy. In terms of efficiency, the invention solves the problems that electronic products which can stably run in a low-temperature severe environment do not need to be specially screened, and the efficiency can be greatly increased and the screening time can be shortened only by utilizing the device which can control temperature, generate heat and raise temperature in the low-temperature environment. In terms of cost, the level of a flash memory chip which is specially screened is not needed, so that the cost can be greatly reduced, the performance of a product is improved, and the requirement of stable operation in a low-temperature environment is met.
The above description is only a preferred embodiment of the present invention and should not be taken as limiting the invention, and any modification, equivalent replacement or improvement made within the technical scope of the present invention should be included in the protection scope of the present invention.
Claims (2)
1. The temperature control type solid state disk applied to the low-temperature environment is characterized by comprising a shell (1), a main board is arranged in the shell (1), a main control unit (2), a single chip microcomputer (3) and a heating control circuit (5) are arranged on the main board, a temperature sensor (4) is arranged in the main control unit (2), an electric heating device (6) is attached to the surface of the main control unit (2), the main control unit (2) is connected with the single chip microcomputer (3), the heating control circuit (5) is connected with the single chip microcomputer (3) and used for controlling the power-on state of the electric heating device (6), the main control unit (2) collects the ambient temperature through the temperature sensor (4), sends a power-on signal to the single chip microcomputer (3) when the ambient temperature is lower than a preset temperature value, the single chip microcomputer (3) sends a heating instruction to the heating control circuit (5) according to the power-on signal, the heating control circuit (5) controls the electric heating device (6) to be powered on and heated until the ambient temperature collected by the temperature sensor (4) is higher than the preset temperature value, the single chip microcomputer (3) sends a power-off signal to the heating control circuit (3), and the single chip microcomputer (3) sends a power-off signal to stop signal according to the single chip microcomputer (3), controlling the electric heating device (6) to stop heating by means of the heating control circuit (5);
when the single chip microcomputer (3) receives a power-down signal sent by the main control unit (2) and the electric heating device (6) stops heating, the single chip microcomputer (3) enters a low-power-consumption working state;
the electric heating device (6) is a silicone rubber electric heating film, and the electric heating device (6) covers the surface of the main control unit (2);
the main board is provided with a cache unit (7) and a flash memory unit (8), and the electric heating device (6) is attached to the surfaces of the cache unit (7) and the flash memory unit (8);
the heating control circuit (5) comprises a booster circuit (50), and the booster circuit (50) is used for loading voltage to the electric heating device (6) according to a heating instruction sent by the singlechip (3);
the chip model of the main control unit (2) is SM2246EN;
the outer side of the main board is wrapped with a heat insulation rubber bag (61), the edge of the electric heating device (6) is fixedly connected with the edge of the heat insulation rubber bag (61), a heat insulation cavity (62) is formed by combining the heat insulation rubber bag (61) and the electric heating device (6), and the main board and the main control unit (2) are arranged in the heat insulation cavity (62).
2. The temperature control method of the solid state disk is characterized in that the solid state disk comprises a shell (1), a main board is arranged in the shell (1), a main control unit (2), a single chip microcomputer (3) and a heating control circuit (5) are arranged on the main board, a temperature sensor (4) is arranged in the main control unit (2), an electric heating device (6) is attached to the surface of the main control unit (2), a heat insulation rubber bag (61) is wrapped outside the main board, the edge of the electric heating device (6) is fixedly connected with the edge of the heat insulation rubber bag (61), a heat insulation cavity (62) is formed by combining the heat insulation rubber bag (61) and the electric heating device (6), and the main board and the main control unit (2) are arranged in the heat insulation cavity (62); the main control unit (2) is connected with the single chip microcomputer (3), the heating control circuit (5) is used for controlling the power-on state of the electric heating device (6), and the temperature control method comprises the following steps:
s1, the main control unit (2) collects the ambient temperature in real time through the temperature sensor (4);
s2, the main control unit (2) judges whether the environmental temperature acquired by the temperature sensor (4) is lower than a preset temperature value, if so, the step S3 is executed, and if not, the step S1 is returned;
s3, the main control unit (2) sends a power-on signal to the singlechip (3);
s4, the single chip microcomputer (3) sends a heating instruction to the heating control circuit (5) according to the electrifying signal, and the heating control circuit (5) controls the electric heating device (6) to be electrified and heated;
step 5, the main control unit (2) judges whether the environmental temperature acquired by the temperature sensor (4) is higher than a preset temperature value, if so, the step 6 is executed, and if not, the step 4 is returned;
s6, the main control unit (2) sends a power-down signal to the singlechip (3);
s7, the single chip microcomputer (3) sends a stop instruction to the heating control circuit (5) according to the power failure signal, and the heating control circuit (5) controls the electric heating device (6) to stop heating;
repeating the steps S1 to S7;
in the step S7, after the single chip microcomputer (3) receives a power-down signal sent by the main control unit (2) and the electric heating device (6) stops heating, the single chip microcomputer (3) enters a low-power-consumption working state; in the step S2, the preset temperature value is-40 ℃;
after the electric heating device (6) stops heating, if the singlechip (3) does not receive the power-on signal sent by the main control unit (2) within the preset time, the singlechip (3) enters a low-power-consumption working state.
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| CN202818637U (en) * | 2012-10-10 | 2013-03-20 | 佛山市顺德区美美创新电器有限公司 | Structure for installing electric-heating device of electrothermal hand warmer |
| CN210959211U (en) * | 2019-06-06 | 2020-07-07 | 漳州市东方拓宇信息科技有限公司 | Heat radiation assembly for mobile terminal equipment |
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| CN200997308Y (en) * | 2006-12-29 | 2007-12-26 | 深圳易拓科技有限公司 | Hard disk |
| CN101562038B (en) * | 2008-04-17 | 2011-01-19 | 研祥智能科技股份有限公司 | Method and device for controlling temperature of hard disc |
| CN203191336U (en) * | 2013-03-21 | 2013-09-11 | 西北农林科技大学 | Tree stem flow measuring instrument |
| CN203397700U (en) * | 2013-07-16 | 2014-01-15 | 深圳市锐明视讯技术有限公司 | Intelligent heating circuit and intelligent heating film |
| CN203386475U (en) * | 2013-07-18 | 2014-01-08 | 记忆科技(深圳)有限公司 | Solid state disk (SSD) |
| CN204331048U (en) * | 2014-12-16 | 2015-05-13 | 吉林大学 | Without cable memory-type seismograph low-power dissipation power supply management system |
| CN106683691A (en) * | 2017-01-09 | 2017-05-17 | 深圳信息职业技术学院 | Solid state disk device for computer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202818637U (en) * | 2012-10-10 | 2013-03-20 | 佛山市顺德区美美创新电器有限公司 | Structure for installing electric-heating device of electrothermal hand warmer |
| CN210959211U (en) * | 2019-06-06 | 2020-07-07 | 漳州市东方拓宇信息科技有限公司 | Heat radiation assembly for mobile terminal equipment |
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