CN112180238A - Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change - Google Patents
Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change Download PDFInfo
- Publication number
- CN112180238A CN112180238A CN202011021316.0A CN202011021316A CN112180238A CN 112180238 A CN112180238 A CN 112180238A CN 202011021316 A CN202011021316 A CN 202011021316A CN 112180238 A CN112180238 A CN 112180238A
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- polarized light
- lens
- liquid crystal
- microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000005284 excitation Effects 0.000 claims abstract description 12
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000012071 phase Substances 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/0004—Microscopes specially adapted for specific applications
- G02B21/0092—Polarisation microscopes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/34—Microscope slides, e.g. mounting specimens on microscope slides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
The invention discloses a liquid crystal phase change-based nondestructive positioning method for internal short circuit failure of an integrated circuit, which comprises the following steps: spraying a liquid crystal solution film on the surface of the integrated circuit chip; a polarized light lens is added at a light outlet of a microscope light source, a rotatable polarized light lens is added at an entrance port of an objective lens, the angle of the polarized light lens of the objective lens is adjusted, and the polarized light lens is fixed when the darkest light is observed from an eyepiece; attaching a heating plate on the upper surface of a microscope objective table, placing the integrated circuit chip on the heating plate on the surface of the microscope objective table, placing the integrated circuit chip under the irradiation of a microscope polarized light source, and adjusting the microscope to enable an eye lens to present a clear image of the integrated circuit chip; providing electrical signal excitation for the integrated circuit chip to enable an electrical signal to flow through the observation area; gradually increasing the intensity of the electric excitation signal, and observing the condition of a darkened area on the surface of the chip through an eyepiece, wherein the abnormally darkened area is a leakage area; the method realizes the nondestructive positioning of the internal short circuit failure of the integrated circuit chip, and has the characteristics of simple and convenient operation and low cost.
Description
Technical Field
The invention belongs to the technical field of integrated circuit failure positioning, and particularly relates to a liquid crystal phase change-based integrated circuit internal short circuit failure nondestructive positioning method.
Background
At present, two methods are generally adopted for positioning the internal short circuit failure of an integrated circuit: one method is that the internal structure of the chip is exposed layer by layer through physical grinding and etching, and the abnormal area of the internal structure is observed to locate failure points; the other method is to use an EMMI microscope to observe abnormal leakage areas to locate failure points. The first method has destructiveness on a failure sample, has high requirement on operation precision, and operation errors can cause failure points to be damaged and influence failure positioning results; the second method has high requirements on equipment capacity and high cost.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a liquid crystal phase change-based integrated circuit internal short circuit failure nondestructive positioning method aims to solve the technical problems that in the prior art, the cost for positioning the integrated circuit internal short circuit failure is high, or a failure sample is destructive, the requirement on operation precision is high, a failure point is damaged possibly due to misoperation, the failure positioning result is influenced, and the like.
The technical scheme of the invention is as follows:
a liquid crystal phase change-based integrated circuit internal short circuit failure nondestructive positioning method comprises the following steps:
step 1, spraying a liquid crystal solution film on the surface of an integrated circuit chip;
step 2, adding a polarized light lens at a light outlet of a microscope light source, adding a rotatable polarized light lens at an entrance port of an objective lens, adjusting the angle of the polarized light lens of the objective lens, and fixing the angle of the polarized light lens when the darkest light is observed from an eyepiece;
step 3, attaching a heating plate to the upper surface of the microscope objective table, and adjusting the temperature of the heating plate to be lower than the liquid phase change temperature of the liquid crystal solution;
step 4, placing the integrated circuit chip on a heating plate on the surface of a microscope objective table, placing the integrated circuit chip under the irradiation of a microscope polarized light source, and adjusting the microscope to enable an eyepiece to present a clear image of the integrated circuit chip;
and 5: providing electrical signal excitation for the integrated circuit chip to enable an electrical signal to flow through the observation area;
step 6: and gradually increasing the intensity of the electric excitation signal, and observing the condition of a darkened area on the surface of the chip through an eyepiece, wherein the abnormally darkened area is a leakage area.
The thickness of the liquid crystal solution film in the step 1 is 145-155 microns.
Step 2, the method for adjusting the angle of the objective lens and the polarized light lens and observing the darkest light from the ocular lens comprises the following steps: the light irradiated on the integrated circuit chip is polarized light by adding the polarized light lens at the light outlet of the microscope light source, so that the reflected light of the integrated circuit chip is the polarized light, the angle of the polarized light lens at the entrance port of the objective lens is adjusted, when the polarized direction of the reflected light of the integrated circuit chip is orthogonal, the reflected light cannot pass through the polarized light lens, and the darkest light is observed from the eyepiece of the microscope.
The method for observing the condition of the darkened area on the surface of the chip through the eyepiece comprises the following steps: when the temperature of the short-circuit position exceeds the liquid crystal phase transition temperature, the liquid crystal solution film at the short-circuit position undergoes phase transition, the deflection effect on the polarization direction of the reflected light is lost, and the reflected light at the position is recovered to be orthogonal to the polarized light lens at the entrance port of the objective lens, so that the reflected light at the position cannot pass through the polarized light lens, and the position becomes dark or even black when observed from the eyepiece of the microscope.
The electric signal excitation is controlled by adopting a pulse width modulation mode.
The invention has the beneficial effects that:
the equipment used by the method for positioning the internal short circuit failure of the integrated circuit chip provided by the invention is mainly a common optical microscope, has low requirement on the equipment capacity, avoids the damage to a failure sample caused by physical grinding and etching, realizes the nondestructive positioning of the internal short circuit failure of the integrated circuit chip, and has the characteristics of simple and convenient operation and low cost; the method solves the technical problems that in the prior art, the cost is high for positioning the internal short circuit failure of the integrated circuit or the failure sample is destructive, the requirement on the operation precision is high, the failure point is possibly damaged due to misoperation, the failure positioning result is influenced, and the like.
Drawings
FIG. 1 is a flow chart of the present invention;
fig. 2 is a schematic view of an apparatus used in the present invention and its integrated installation relationship.
Detailed Description
A method for positioning failure of internal short circuit of an integrated circuit based on liquid crystal phase change comprises the following steps:
step 1: spraying a liquid crystal solution film on the surface of the integrated circuit chip, wherein the thickness of the film is about 145-155 microns;
step 2: a polarized light lens is added at a light outlet of a microscope light source, a rotatable polarized light lens is added at an entrance port of an objective lens, the angle of the polarized light lens of the objective lens is adjusted, and when the darkest light is observed from an eyepiece, the angle of the polarized light lens is fixed;
and step 3: attaching a heating plate on the upper surface of a microscope objective table, and adjusting the temperature of the heating plate to be slightly lower than the liquid phase change temperature of the liquid crystal solution;
and 4, step 4: placing the integrated circuit chip on a heating plate on the surface of a microscope objective table, placing the integrated circuit chip under the irradiation of a microscope polarized light source, and adjusting the microscope to enable an eyepiece to present a clear image of the integrated circuit chip;
and 5: providing proper electrical signal excitation to the integrated circuit chip to enable the electrical signal to flow through the observation area;
step 6: and gradually increasing the intensity of the electric excitation signal, and observing the condition of a darkened area on the surface of the chip through an eyepiece, wherein the abnormally darkened area is a leakage area.
In the step 1, the liquid crystal solution film is too thin to effectively deflect the polarization angle of incident light, and too thick can affect the heat conduction efficiency, and when the liquid crystal solution film is observed to present a color stripe pattern, the liquid crystal solution film has moderate thickness which is about 145-155 microns;
in step 2, adding a polarized light lens at the light outlet of the microscope light source makes the light irradiated on the integrated circuit chip be polarized light, so that the light reflected by the integrated circuit chip is also polarized light, adjusting the angle of the polarized light lens at the entrance of the objective lens, and when the polarized light lens is orthogonal to the polarized direction of the light reflected by the integrated circuit chip, the reflected light cannot pass through the polarized light lens, so that the darkest light is observed from the eyepiece of the microscope.
In the step 3, the heating plate enables the integrated circuit chip to have a certain basic temperature, reduces the electric signal intensity required for heating the short circuit point of the integrated circuit chip to the phase-change temperature of the liquid crystal solution, and protects the sample from secondary damage.
In the step 4, due to the influence of the liquid crystal solution film on the surface of the integrated circuit chip, the polarization angle of the reflected light is deflected, the polarization direction of the reflected light is no longer orthogonal to the polarized light lens at the entrance of the objective lens, and the reflected light can pass through the polarized light lens, so that the image of the integrated circuit chip can be observed in the eyepiece.
In the step 5, the electrical signal excitation can be controlled by adopting a pulse width modulation mode to accurately adjust the heating temperature of the chip, so that the chip is prevented from secondary damage.
In the step 6, when the temperature of the short-circuit position exceeds the liquid crystal phase transition temperature, the liquid crystal solution film at the short-circuit position undergoes phase transition, the polarization direction deflection effect on the reflected light is lost, the reflected light at the position is recovered to be orthogonal to the polarized light lens at the entrance port of the objective lens, so that the reflected light at the position cannot pass through the polarized light lens, and the position becomes dark or even black when observed from the eyepiece of the microscope.
The invention is further illustrated with reference to fig. 1 and 2:
the invention discloses a method for positioning internal short circuit failure of an integrated circuit based on liquid crystal phase change, which can realize the positioning of internal short circuit failure points of an integrated circuit chip in a lossless state and comprises the following steps:
step 1: spraying a liquid crystal solution film on the surface of the integrated circuit chip, wherein the thickness of the film is 150 microns;
step 2: a polarized light lens 5 is added at a light outlet 4 of a microscope light source, a rotatable polarized light lens 3 is added at an objective lens entrance port 2, the angle of the objective lens polarized light lens 3 is adjusted, and the angle of the polarized light lens 3 is fixed when the darkest light is observed from an eyepiece 1;
and step 3: attaching a heating plate 7 to the upper surface of a microscope objective table 8, and adjusting the temperature of the heating plate 7 to be slightly lower than the liquid phase change temperature of the liquid crystal solution;
and 4, step 4: placing the integrated circuit chip 6 on a heating plate 7 on the surface of a microscope objective table 8, placing the integrated circuit chip under the irradiation of a microscope polarized light source 4, and adjusting the microscope to enable the eyepiece 1 to present a clear image of the integrated circuit chip;
and 5: providing an appropriate electrical signal stimulus 9 to the integrated circuit chip 6 to cause an electrical signal to flow through the observation region;
step 6: the intensity of the electric excitation signal 9 is gradually increased, the condition of the darkened area on the surface of the chip is observed through the ocular lens 1, and the abnormally darkened area is the electric leakage area.
Claims (5)
1. A liquid crystal phase change-based integrated circuit internal short circuit failure nondestructive positioning method comprises the following steps:
step 1, spraying a liquid crystal solution film on the surface of an integrated circuit chip;
step 2, adding a polarized light lens at a light outlet of a microscope light source, adding a rotatable polarized light lens at an entrance port of an objective lens, adjusting the angle of the polarized light lens of the objective lens, and fixing the angle of the polarized light lens when the darkest light is observed from an eyepiece;
step 3, attaching a heating plate to the upper surface of the microscope objective table, and adjusting the temperature of the heating plate to be lower than the liquid phase change temperature of the liquid crystal solution;
step 4, placing the integrated circuit chip on a heating plate on the surface of a microscope objective table, placing the integrated circuit chip under the irradiation of a microscope polarized light source, and adjusting the microscope to enable an eyepiece to present a clear image of the integrated circuit chip;
and 5: providing electrical signal excitation for the integrated circuit chip to enable an electrical signal to flow through the observation area;
step 6: and gradually increasing the intensity of the electric excitation signal, and observing the condition of a darkened area on the surface of the chip through an eyepiece, wherein the abnormally darkened area is a leakage area.
2. The method for lossless positioning of internal short circuit failure of the integrated circuit based on liquid crystal phase change as claimed in claim 1, wherein: the thickness of the liquid crystal solution film in the step 1 is 145-155 microns.
3. The method for lossless positioning of internal short circuit failure of the integrated circuit based on liquid crystal phase change as claimed in claim 1, wherein: step 2, the method for adjusting the angle of the objective lens and the polarized light lens and observing the darkest light from the ocular lens comprises the following steps: the light irradiated on the integrated circuit chip is polarized light by adding the polarized light lens at the light outlet of the microscope light source, so that the reflected light of the integrated circuit chip is the polarized light, the angle of the polarized light lens at the entrance port of the objective lens is adjusted, when the polarized direction of the reflected light of the integrated circuit chip is orthogonal, the reflected light cannot pass through the polarized light lens, and the darkest light is observed from the eyepiece of the microscope.
4. The method for lossless positioning of internal short circuit failure of the integrated circuit based on liquid crystal phase change as claimed in claim 1, wherein: the method for observing the condition of the darkened area on the surface of the chip through the eyepiece comprises the following steps: when the temperature of the short-circuit position exceeds the liquid crystal phase transition temperature, the liquid crystal solution film at the short-circuit position undergoes phase transition, the deflection effect on the polarization direction of the reflected light is lost, and the reflected light at the position is recovered to be orthogonal to the polarized light lens at the entrance port of the objective lens, so that the reflected light at the position cannot pass through the polarized light lens, and the position becomes dark or even black when observed from the eyepiece of the microscope.
5. The method for lossless positioning of internal short circuit failure of the integrated circuit based on liquid crystal phase change as claimed in claim 1, wherein: the electric signal excitation is controlled by adopting a pulse width modulation mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011021316.0A CN112180238A (en) | 2020-09-25 | 2020-09-25 | Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011021316.0A CN112180238A (en) | 2020-09-25 | 2020-09-25 | Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112180238A true CN112180238A (en) | 2021-01-05 |
Family
ID=73943502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011021316.0A Pending CN112180238A (en) | 2020-09-25 | 2020-09-25 | Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112180238A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11166902A (en) * | 1998-04-09 | 1999-06-22 | Mitsui Mining & Smelting Co Ltd | Defect observing device of semiconductor wafer and other |
| CN1354360A (en) * | 2000-11-22 | 2002-06-19 | 精工爱普生株式会社 | Method and apparatus for appraising liquid crystal panel |
| CN1734230A (en) * | 1999-08-06 | 2006-02-15 | 热生物之星公司 | Instruments for analyzing binding assays based on attenuation of light by thin films |
| CN108240996A (en) * | 2016-12-27 | 2018-07-03 | 无锡华润上华科技有限公司 | Method for analyzing chip failure and device |
| CN108922861A (en) * | 2018-05-14 | 2018-11-30 | 北京智芯微电子科技有限公司 | Integrated circuit repair apparatus and method based on infrared imaging positioning mode |
| CN108982520A (en) * | 2018-08-03 | 2018-12-11 | 汕头超声显示器（二厂）有限公司 | A kind of detection method and device of film bottom visible defects |
-
2020
- 2020-09-25 CN CN202011021316.0A patent/CN112180238A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11166902A (en) * | 1998-04-09 | 1999-06-22 | Mitsui Mining & Smelting Co Ltd | Defect observing device of semiconductor wafer and other |
| CN1734230A (en) * | 1999-08-06 | 2006-02-15 | 热生物之星公司 | Instruments for analyzing binding assays based on attenuation of light by thin films |
| CN1354360A (en) * | 2000-11-22 | 2002-06-19 | 精工爱普生株式会社 | Method and apparatus for appraising liquid crystal panel |
| CN108240996A (en) * | 2016-12-27 | 2018-07-03 | 无锡华润上华科技有限公司 | Method for analyzing chip failure and device |
| CN108922861A (en) * | 2018-05-14 | 2018-11-30 | 北京智芯微电子科技有限公司 | Integrated circuit repair apparatus and method based on infrared imaging positioning mode |
| CN108982520A (en) * | 2018-08-03 | 2018-12-11 | 汕头超声显示器（二厂）有限公司 | A kind of detection method and device of film bottom visible defects |
Non-Patent Citations (1)
| Title |
|---|
| 陈媛: "液晶热点检测技术在集成电路失效定位中的应用", 2010第十五届可靠性学术年会, pages 99 - 103 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5406213A (en) | Instrument for testing liquid crystal display base plates | |
| US7072004B2 (en) | Array substrate for a liquid crystal display device and method for fabricating thereof having vertical pattern | |
| US10705368B2 (en) | Display panel and manufacturing method thereof | |
| US9222970B2 (en) | Fault position analysis method and fault position analysis device for semiconductor device | |
| EP2541308A1 (en) | Polarization conversion element | |
| US20190115660A1 (en) | Scanning antenna, method for inspecting scanning antenna, and method for manufacturing scanning antenna | |
| US20140256205A1 (en) | Systems and methods for providing polarization compensated multi-spectral laser repair of liquid crystal display panels | |
| CN109375426A (en) | A kind of unilateral orientation active liquid crystal polarization grating structure and preparation method thereof | |
| US7626706B2 (en) | Polarization interference microscope | |
| CN109613771A (en) | Liquid crystal display panel dim spot restorative procedure | |
| CN110361888A (en) | A kind of color membrane substrates and preparation method thereof, display panel, display device | |
| CN103969853A (en) | Array substrate, detecting method and detecting device of array substrate | |
| CN112180238A (en) | Integrated circuit internal short circuit failure positioning method based on liquid crystal phase change | |
| US20080116928A1 (en) | Electro-Optic Modulator Assembly For Contactless Test Of Flat Panel Display, Method For Contactless Test Of Flat Panel Display Using The Same, Method For Manufacturing Flat Panel Display Using The Method For Contactless Test Of Flat Panel Display, And Related Technologies | |
| CN108572487A (en) | A kind of round Darman raster photo orientated based on ferroelectric liquid crystals | |
| CN101750766B (en) | Method for repairing liquid crystal display panel using polarized light | |
| CN103257036B (en) | The method of vertical cavity surface emitting laser chamber mould splitting is measured under a kind of room temperature | |
| JP3273973B2 (en) | Inspection apparatus for active matrix liquid crystal display substrate, inspection method thereof, and electro-optical element for inspection apparatus | |
| KR20060067040A (en) | Appartus and method for repairing liquid crystal display panel | |
| US9979586B2 (en) | Phase modulation device and laser microscope | |
| US20070013831A1 (en) | Liquid crystal panel and method of repairing same | |
| CN112363330B (en) | Dual-crystal electro-optical switch assembly system, assembly method and dual-crystal electro-optical switch | |
| CN210222403U (en) | Inspection apparatus | |
| CN114296266B (en) | Refractive liquid crystal optical sword device capable of electrically controlling focusing and working method | |
| CN111580290B (en) | Display defect repairing method for semiconductor display panel without upper polarizing film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |