CN112175612B - Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation - Google Patents

Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation Download PDF

Info

Publication number
CN112175612B
CN112175612B CN202010636000.6A CN202010636000A CN112175612B CN 112175612 B CN112175612 B CN 112175612B CN 202010636000 A CN202010636000 A CN 202010636000A CN 112175612 B CN112175612 B CN 112175612B
Authority
CN
China
Prior art keywords
alkaline earth
earth metal
sno
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010636000.6A
Other languages
Chinese (zh)
Other versions
CN112175612A (en
Inventor
徐骏
张阳熠
王理想
陈佳明
侯国智
李东珂
陈坤基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Original Assignee
Nanjing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University filed Critical Nanjing University
Priority to CN202010636000.6A priority Critical patent/CN112175612B/en
Publication of CN112175612A publication Critical patent/CN112175612A/en
Application granted granted Critical
Publication of CN112175612B publication Critical patent/CN112175612B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7701—Chalogenides
    • C09K11/7703—Chalogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7701—Chalogenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+The composite film and the preparation method thereof, the alkaline earth metal ions comprise magnesium Mg2+Calcium, Ca2+Strontium, Sr2+And barium Ba2+(ii) a Silicon-based SnO2:Er3+A composite structure film with SnO structure2:Er3+Nanocrystalline embedded amorphous SiO2A film; relative to Si element Sn4+Has a doping concentration in the range of 5 to 50 mol%, Er3+The concentration of the ions is 3-10 mol%, and the doping concentration of the alkaline earth metal is 0.01-25 mol%. Enhancement of silicon-based SnO by alkaline earth metal ion doping2:Er3+Intensity of infrared light emission of the composite structure film. Alkaline earth metal chlorate is adopted as a doping agent, and the alkaline earth metal ion doped silicon-based SnO is prepared by combining a glue homogenizing technology with post-annealing treatment2:Er3+A composite structural film.

Description

Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation
Technical Field
The invention relates to the enhancement of silica-based SnO2:Er3+A method for infrared light emission of composite structure film, in particular to a method for preparing silicon-based SnO by adopting alkaline earth metal ion doping combined with glue homogenizing technology and post annealing process2:Er3+Method for preparing composite structure film, especially for increasing Er3+Ionic infrared (1530nm) band emission.
Background
Er3+First excited state of ion4I13/2Energy level to ground state4I15/2The transition of the energy level corresponds to the emission of near infrared light in the 1530nm band, which falls well within the minimum loss window of the quartz optical waveguide fiber. Er with near-infrared light emission3+Doped silicon-based wide band gap semiconductor materials are of great interest to researchers. Er3+The doped silicon oxide film has the characteristic of silicon-based compatibility, and can be possibly used for preparing a near-infrared LED light source and applied to silicon-based monolithic optical interconnection. Due to Er3+Has a small light absorption cross section, and is known as Er3+Introducing metal oxide semiconductor nanocrystals into the doped silicon oxide film, and introducing the metal oxide semiconductor nanocrystals into Er through the nanocrystals3+Effective ion resonance energy transfer to implement Er3+Enhancement of ion near infrared light. At present, wide bandgap oxide semiconductor In2O3ZnO and SnO2The nanocrystals have been studied to some extent as donors for energy resonance transfer. In particular SnO2Nanocrystals can be prepared by adjusting SnO2Size realization of nanocrystals SnO2Efficient resonance energy transfer from the nanocrystalline to the rare earth ions. Compared with SiO2:Er3+Film, SiO2/SnO2:Er3+The rare earth luminous intensity of the film is improved by 3 orders of magnitude.
In order to further improve silicon-based SnO2:Er3+Thin film Er3+Ion infrared emission, we choose to use alkaline earth metal ions (Mg)2+、Ca2+、Sr2+And Ba2+Etc., including but not limited to these). SnO can be effectively adjusted by alkaline earth metal ion doping2The crystal structure, optical band gap and photoelectric property of the composite material, and can regulate and control SnO2The number of oxygen vacancy defects in the nanocrystal, and the like. The wet chemical method is combined with the glue homogenizing technology and the post annealing treatment to prepare the alkaline earth metal ion (Ba)2+、Mg2+、Sr2+And Ca2+) Doped silica-based SnO2:Er3+A composite structural film. Under the excitation of 325nm laser, the composite structure thin film Er is found3 +The infrared light emission intensity of the ions is greatly improved. Alkaline earth metal ion doped silicon-based SnO2:Er3+Composite structural filmThe improvement of the infrared light emission intensity is expected to provide technical support in the application of the silicon-based photoelectric interconnection field.
Disclosure of Invention
In view of the above, the present invention provides a silicon-based SnO doped with alkaline earth metal ions for improving IR light emission2:Er3+Composite film, preparation method thereof and composite structure film Er prepared by method3+The infrared light intensity of the ions is greatly improved.
The technical scheme of the invention is that the silicon-based SnO for improving infrared light emission by doping alkaline earth metal ions2:Er3+A composite film, said alkaline earth metal ions comprising magnesium (Mg)2+) Calcium (Ca)2+) Strontium (Sr)2+) And barium (Ba)2+) Etc., including but not limited to these elements; silicon-based SnO2:Er3+A composite structure film with SnO structure2:Er3+Nanocrystalline embedded amorphous SiO2Films, including but not limited to films; relative to Si element Sn4+Has a doping concentration in the range of 5 to 50 mol%, Er3+The concentration of the ions is 3-10 mol%, and the doping concentration of the alkaline earth metal is 0.01-25 mol%.
Doping with alkaline earth metals can increase SnO2Defect state number of (2), regulated SnO2Optical band gap and crystal symmetry of (a); the luminescence process is SnO2The nanocrystals absorb ultraviolet energy and then transfer the absorbed energy to a nearby Er3+Ion, then in Er3+The electrons in the excited state of the ion are transferred to the ground state to emit corresponding fluorescence.
Alkaline earth metal ion doped silicon-based SnO2:Er3+The preparation method of the composite structure film comprises the following steps:
1) cleaning a silicon wafer as a substrate by adopting an RCA standard cleaning method;
2) dissolving alkaline earth metal chlorate as dopant into tetraethyl orthosilicate (TEOS), deionized water, absolute ethyl alcohol and SnCl4·5H2O and Er (NO)3)3·5H2Preparing the O precursor solution into gel, and combining the gel homogenizing technology with a post-annealing process (1000)DEG C) preparation of alkaline earth metal ion doped silicon-based SnO2:Er3+A composite structural film.
2-1) tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol are uniformly mixed according to the volume ratio of 1:1:2, hydrochloric acid is added to adjust the PH to be about 2.0, and SnCl is accurately weighed according to the designed molar ratio4·5H2O、Er(NO3)3·5H2O and alkaline earth metal chlorate, and fully dissolving the O and the alkaline earth metal chlorate in the solution to form sol;
2-2) placing the sol in an environment water bath at 60 +/-5 ℃ for 4 +/-1 h, and then placing the sol at room temperature for aging for 1 day to form gel;
2-3) measuring a proper amount of gel, dripping the gel on a cleaned silicon wafer, and preparing the alkaline earth metal ion doped silicon-based SnO by utilizing a spin coating technology2:Er3+The composite structure film is spin-coated at a rotation speed of 2000-7000 rpm;
2-4) doping alkaline earth metal ions with silicon-based SnO2:Er3+The composite structure film is placed in a drying oven at 100 +/-10 ℃ for 1 +/-0.5 hours, and then is annealed at 1000 +/-50 ℃ for 1 +/-0.5 hours in an air atmosphere.
The alkaline earth metal ion doped silicon-based SnO obtained by the method2:Er3+The composite structure film is excited by a 325nm He-Ge laser to test the luminous performance, and an InGaAs photodiode cooled by liquid nitrogen is used as a detector for testing the infrared light wave band. Doping of alkaline earth metal ions into silicon-based SnO as compared to film samples without alkaline earth metal ions doping2:Er3+Composite structure film Er3+The infrared light emission of the ions is greatly improved by about 12 times to the maximum.
Has the advantages that: alkaline earth metal ion doped silicon-based SnO prepared by using method2:Er3+The composite structure film is a silicon-based compatible film material. (II) preparing alkaline earth metal ion doped silicon-based SnO by gelation and annealing treatment2:Er3+A composite structural film. Alkaline earth metal ion doped silicon-based SnO prepared by using method2:Er3+The composite structure film has simple process, low cost, convenient large-area preparation and convenient popularization.(III) alkaline earth metal ion doped silicon-based SnO prepared by using method2:Er3+Composite structure film, Er under the excitation of 325nm laser3+The emission intensity of infrared light with the wavelength of 1530nm of ions is greatly improved, and the integral intensity of the infrared light is improved by about 12 times to the maximum.
Drawings
FIG. 1 is a 0 mol% Ba and 10 mol% Ba doped silicon-based SnO of the present invention2:Er3+An X-ray diffraction (XRD) pattern of the composite-structured thin film;
FIG. 2 is a 10 mol% Ba-doped silicon-based SnO according to the invention2:Er3+Transmission Electron Microscope (TEM) image of composite structure film, in which SnO2The average size of the nanocrystals was 3.7 nm;
in FIG. 3, (a) is 0, 5, 10 and 15 mol% Ba doped silicon-based SnO excited by 325nm laser2:Er3+An infrared spectrum of the composite structure film; (b) the spectrum of the infrared light integral intensity along with the Ba ion doping concentration change;
in FIG. 4, (a) is 0, 5, 11 and 20 mol% Mg doped silicon-based SnO excited by 325nm laser2:Er3+An infrared spectrum of the composite structure film; (b) the spectrum of the change of the integrated intensity of infrared light along with the doping concentration of Mg ions;
in FIG. 5, (a) 0, 2, 5, 8 and 11 mol% Ca doped silica-based SnO with 325nm laser excitation2:Er3+An infrared spectrum of the composite structure film; (b) the spectrum of the change of the integral intensity of the infrared light along with the doping concentration of the Ca ions;
in FIG. 6, (a) 0, 5, 10, 15, 20 and 25 mol% Sr doped Si-based SnO excited by 325nm laser2:Er3+An infrared spectrum of the composite structure film; (b) is a graph of the change of the integrated intensity of infrared light along with the doping concentration of Sr ions.
Detailed Description
The invention is further described with reference to the accompanying drawings and specific embodiments.
Alkaline earth metal ion doped silicon-based SnO2:Er3+The preparation method of the composite structure film comprises the steps of firstly, tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcoholUniformly mixing the components according to the volume ratio of 1:1:2, dropwise adding a little hydrochloric acid to adjust the pH of the mixed solution to about 2.0, and accurately weighing SnCl4·5H2O(20mol％)，Er(NO3)3·5H2Dissolving O (5 mol%) and alkaline earth metal chlorate (including chloride) designed according to the molar concentration proportion in the mixed solution sufficiently to prepare transparent sol, then placing the sol in 60-DEG environment water bath for 4 hours to hydrolyze sufficiently, then placing the sol at room temperature to age for 24 hours to form uniform gel, taking a proper amount of gel to drop-coat the gel on a cleaned silicon wafer for 2000 plus 7000 r/min to form a film, placing the prepared gel film in a drying box for drying at 100 ℃ for 1 hour, and finally annealing at 1000 ℃ for 1 hour.
The method comprises the following steps:
1) cleaning a silicon wafer as a substrate by adopting an RCA standard cleaning method;
2) tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol are uniformly mixed according to the volume ratio of 1:1:2, hydrochloric acid is added to adjust the pH to be about 2.0, and SnCl is accurately weighed4·5H2O(20mol％)、Er(NO3)3·5H2O (5 mol%) and alkaline earth metal chlorate (including chloride) designed according to the molar concentration ratio, and fully dissolving the alkaline earth metal chlorate and the chloride in the solution to form sol;
3) under the condition of keeping continuous stirring, putting the sol into an environment water bath at 60 ℃ for 4 hours to be fully hydrolyzed to form gel, and then aging for 1 day at room temperature;
4) measuring a proper amount of gel, dripping the gel on a cleaned silicon wafer, and forming a film by spin coating at a rotating speed of 2000-7000 rpm and spin-coating for 1 minute;
5) the prepared gel film is placed in a drying oven for drying for 1 hour at 100 ℃, and then is annealed for 1 hour at 1000 ℃ in the air atmosphere to prepare the alkaline earth metal ion doped silicon-based SnO2:Er3+A composite structural film.
Specific example 1:
accurately weighing SnCl4·5H2O(20mol％)，Er(NO3)3·5H2O (5 mol%) and BaCl2·2H2O (0, 5, 10 and 15 mol%)) Fully dissolving in a mixed solution of tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol (volume ratio is 1:1:2), dropwise adding a little hydrochloric acid to adjust the pH of the mixed solution to about 2.0, then placing in a 60 ℃ environment water bath for 4 hours to fully hydrolyze, then placing under the room temperature condition to age for 24 hours to form uniform gel, dropwise coating a proper amount of gel on a cleaned silicon wafer, uniformly coating at 3000 r/min to form a film for 1 minute, placing the prepared gel film in a drying oven at 100 ℃ for drying for 1 hour, and finally annealing at 1000 ℃ for 1 hour to form Ba ion doped silicon-based SnO2:Er3+A composite structural film.
FIG. 1 is 0 mol% Ba and 10 mol% Ba doped silicon-based SnO2:Er3+The XRD pattern of the composite structure film shows that the film is tin oxide with a four-corner structure.
FIG. 2 is 10 mol% Ba-doped silicon-based SnO2:Er3+TEM image of composite structure film, sample is shown as SnO2Nanocrystalline embedded amorphous SiO2Thin films, SnO2The average size of the nanocrystals was about 3.7 nm.
FIG. 3 shows silica-based SnO doped with different Ba ion concentrations under 325nm laser excitation2:Er3+Infrared fluorescence spectrum of the composite structure film. When the concentration of Ba ions is 10 mol%, the infrared light intensity is increased to about 12 times compared with that of the undoped sample.
Example 2:
accurately weighing SnCl4·5H2O(20mol％)，Er(NO3)3·5H2O (5 mol%) and MgCl2·6H2Dissolving O (0, 5, 11 and 20 mol%) in a mixed solution of tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol (volume ratio is 1:1:2), dropwise adding a little hydrochloric acid to adjust the pH of the mixed solution to about 2.0, then placing the mixed solution in an environment with 60 ℃ for 4 hours to fully hydrolyze, placing the mixed solution in a room temperature condition for aging for 24 hours to form uniform gel, dropwise coating a proper amount of gel on a cleaned silicon wafer for 3000 revolutions per minute to form a film, placing the prepared gel film in a drying oven for drying at 100 ℃ for 1 hour, and finally annealing at 1000 ℃ for 1 hour to form Mg ion doped silicon-based SnO2:Er3+A composite structural film.
FIG. 4 shows silica-based SnO doped with different Mg ion concentrations under 325nm laser excitation2:Er3+Infrared fluorescence spectrum of the composite structure film. When the concentration of Mg ions is 11 mol%, the infrared light intensity is increased to about 4.8 times compared with that of an undoped sample.
Example 3:
accurately weighing SnCl4·5H2O(20mol％)，Er(NO3)3·5H2O (5 mol%) and CaCl2·2H2Dissolving O (0, 2, 5, 8 and 11 mol%) in a mixed solution of tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol (volume ratio is 1:1:2), dropwise adding a little hydrochloric acid to adjust the pH of the mixed solution to about 2.0, then placing the mixed solution in a 60 ℃ environment water bath for 4 hours to fully hydrolyze, placing the mixed solution in a room temperature condition for aging for 24 hours to form uniform gel, dropwise coating a proper amount of gel on a cleaned silicon wafer for 3000 revolutions per minute to form a film after uniformly dispersing the gel for 1 minute, placing the prepared gel film in a drying oven for drying at 100 ℃ for 1 hour, and finally annealing at 1000 ℃ for 1 hour to form Ca ion doped silicon-based SnO2:Er3+A composite structural film.
FIG. 5 shows silica-based SnO doped with different Ca ion concentrations under 325nm laser excitation2:Er3+Infrared fluorescence spectrum of the composite structure film. When the concentration of Ca ions is 11 mol%, the infrared light intensity is increased to about 2.8 times compared with that of the undoped sample.
Example 4:
accurately weighing SnCl4·5H2O(20mol％)，Er(NO3)3·5H2O (5 mol%) and SrCl2·2H2Dissolving O (0, 5, 10, 15, 20 and 25 mol%) in tetraethyl orthosilicate (TEOS), deionized water and absolute ethyl alcohol (volume ratio 1:1:2), adding a little hydrochloric acid dropwise to adjust the pH of the mixed solution to about 2.0, then placing the mixed solution in a 60 ℃ environment water bath for 4 hours to fully hydrolyze, placing the mixed solution in a room temperature condition for aging for 24 hours to form uniform gel, dripping a proper amount of gel on a cleaned silicon wafer for 3000 revolutions per minute to form a film after uniformly distributing the gel for 1 minute, placing the prepared gel film in a drying oven for drying for 1 hour at 100 ℃, and finally annealing for 1 hour at 1000 ℃ to form Sr ion doped silicon-based SnO2:Er3+A composite structural film.
FIG. 6 shows silicon-based SnO doped with different Sr ion concentrations under 325nm laser excitation2:Er3+Infrared fluorescence spectrum of the composite structure film. When the concentration of Sr ions is 20 mol%, the infrared light intensity is increased to about 3.7 times compared with that of an undoped sample.
The above embodiments further explain the technical solutions and the beneficial effects of the present invention in detail. It should be emphasized that the above-described embodiments are merely exemplary embodiments of the present invention, and any modification, such as replacement, improvement, etc., made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (2)

1. Alkaline earth metal ion doped silicon-based SnO2:Er3+The preparation method of the composite structure film is characterized in that alkaline earth metal ions are doped with silicon-based SnO2:Er3+The alkaline earth metal ions in the composite structural film include Mg2+、Ca2+、Sr2+And Ba2+(ii) a Silicon-based SnO2:Er3+The composite structure film structure is SnO2:Er3+Nanocrystalline embedded amorphous SiO2Thin film of Sn relative to Si element4+Has a doping concentration in the range of 5 to 50 mol%, Er3+The concentration of the ions is 3-10 mol%, and the doping concentration of the alkaline earth metal is 2-25 mol%; alkaline earth metal doping to increase SnO2Defect state number of (2), regulated SnO2Optical band gap and crystal symmetry of (a); the luminescence process is SnO2The nanocrystals absorb ultraviolet energy and then transfer the absorbed energy to a nearby Er3+Ion, then in Er3+The electrons in the excited ion state are transited to the ground state to emit corresponding fluorescence; the preparation method comprises the following steps: 1) Cleaning a silicon wafer as a substrate by adopting an RCA standard cleaning method; 2) tetraethyl orthosilicate TEOS, deionized water and absolute ethyl alcohol are uniformly mixed according to the volume ratio of 1:1:2, hydrochloric acid is added to adjust the pH value to 2.0, and SnCl is accurately weighed according to the designed molar ratio4•5H2O、Er(NO3)3•5H2O and alkaline earth metal chloric acidSalt, and fully dissolving the salt in the solution to form sol; 3) Placing the sol in an environmental water bath at 60 ℃ for 4 hours, and then placing the sol at room temperature for aging for 1 day to form gel; 4) taking a proper amount of gel, dripping the gel on a cleaned silicon wafer, and preparing the alkaline earth metal ion doped silicon-based SnO by utilizing a spin coating technology2:Er3+The composite structure film is spin-coated at a rotation speed of 2000-7000 rpm; 5) doping alkaline earth metal ions with silicon-based SnO2:Er3+Placing the composite structure film in a drying oven at 100 ℃ for 1 hour, and then annealing the composite structure film in an air atmosphere at 1000 ℃ for 1 hour; 6) testing alkaline earth metal ion doped silicon-based SnO under excitation of 325nm He-Ge laser2:Er3+The light emitting performance of the composite structure film is tested in the infrared light wave band by adopting a liquid nitrogen cooled InGaAs photodiode as a detector.
2. The alkaline earth metal ion doped silicon-based SnO of claim 12:Er3+The preparation method of the composite structure film is characterized in that the alkaline earth metal is doped and then silicon-based SnO is adopted2:Er3+The infrared light intensity of the composite structure film is greatly improved, and the integral intensity of the composite structure film is improved by 12 times to the maximum.
CN202010636000.6A 2020-07-03 2020-07-03 Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation Active CN112175612B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010636000.6A CN112175612B (en) 2020-07-03 2020-07-03 Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010636000.6A CN112175612B (en) 2020-07-03 2020-07-03 Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation

Publications (2)

Publication Number Publication Date
CN112175612A CN112175612A (en) 2021-01-05
CN112175612B true CN112175612B (en) 2021-11-12

Family

ID=73919115

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010636000.6A Active CN112175612B (en) 2020-07-03 2020-07-03 Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation

Country Status (1)

Country Link
CN (1) CN112175612B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101928561A (en) * 2009-06-26 2010-12-29 中国科学院福建物质结构研究所 Erbium ion-doped tin dioxide nanocrystal near-infrared light-emitting material and preparation method and application thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101928561A (en) * 2009-06-26 2010-12-29 中国科学院福建物质结构研究所 Erbium ion-doped tin dioxide nanocrystal near-infrared light-emitting material and preparation method and application thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ⅡA族元素掺杂SnO2的第一性原理研究及其薄膜制备;何海英;《中国博士学位论文全文数据库工程科技Ⅰ辑》;20151115(第11期);第B020-42页 *
利用能量共振转移过程增强稀土掺杂硅基薄膜材料荧光效率的研究;张晓伟;《中国优秀硕士学位论文全文数据库，工程科技Ⅰ辑》;20150315(第3期);第B020-296页 *

Also Published As

Publication number Publication date
CN112175612A (en) 2021-01-05

Similar Documents

Publication Publication Date Title
Selomulya et al. Luminescence properties of Zn2SiO4: Mn2+ thin-films by a sol–gel process
US8066908B2 (en) Production of light from sol-gel derived thin films made with lanthanide doped nanoparticles, and preparation thereof
Yu et al. Sol–gel deposition and luminescent properties of oxyapatite Ca 2 (Y, Gd) 8 (SiO 4) 6 O 2 phosphor films doped with rare earth and lead ions
CN112961675B (en) Method for improving stability of perovskite quantum dots through sol-gel passivation
CN103289683A (en) Preparation method of CdS quantum dot nanometer composite film cladded by SiO2
Lin et al. Sol–gel synthesis and characterization of Zn2SiO4: Mn phosphor films
El Nahrawy et al. Spectroscopic study of Eu3+-doped magnesium lanthanum phosphate (MLPO) films on SiO2 substrate
Xu et al. Luminescence properties related to energy transfer process and cross relaxation process of Y2O3: Yb3+/Er3+ thin films doped with K+ ion
CN112175612B (en) Silicon-based SnO (stannic oxide) for improving infrared light emission by doping alkaline earth metal ions2:Er3+Composite film and preparation
Enrichi et al. Ag-sensitized Tb3+/Yb3+ codoped silica-zirconia glasses and glass-ceramics: Systematic and detailed investigation of the broadband energy-transfer and downconversion processes
Dawngliana et al. Effect of ZnO nanoparticles on the Judd–Ofelt and radiative parameters of Sm3+ ions in sol–gel silica matrix
CN113755170A (en) Rare earth ion doped bismuth silicate up-conversion luminescent material and preparation method thereof
Khan et al. Eu3+ doped silica xerogel luminescent layer having antireflection and spectrum modifying properties suitable for solar cell applications
Muscelli et al. Near Infrared Emission at 1000 nm from Nanostructured Pr 3+/Yb 3+ Co-doped SiO 2-Nb 2 O 5 for Solar Cell Application
JP5749798B2 (en) Rare earth element doped yttrium oxide light-emitting film containing conductive oxide and method for preparing the same
CN102503549A (en) Preparation method for polycrystalline thin film made of lutecium silicate doped with rare earth ions
Jia et al. Sol–gel deposition and luminescence properties of LiYF4: Tb3+ thin films
Sheng et al. Photoluminescence of TiO2 films co-doped with Tb3+/Gd3+ and energy transfer from TiO2/Gd3+ to Tb3+ ions
Park et al. Epitaxial KNbO3: Yb3+, Er3+ nanopattern for enhanced upconversion photoluminescence
Nogami et al. SnO2-nanocrystals for enhancing the fluorescence of Eu3+ ions in sol–gel-derived glasses
Zhang et al. Preparation and luminescent performances of tellurite glass coated CsPbBr3@ glass film for remote LED color converter
Zhang et al. Enhanced Photoluminescence of Tb 3+ Ions Ce 3+ Ions and SnO 2 Nanocrystals Co-doped Silica Thin Films
Zhang et al. Energy transfer process between Eu 3+ and wide-band-gap SnO 2 nanocrystals in silica films studied by photoluminescence excitation and time-resolved photoluminescence techniques
CN113564709B (en) Metal impurity atom doped erbium silicate and preparation method and application thereof
CN116577382B (en) Gas sensor based on light excitation, preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant