CN103289683A - Preparation method of CdS quantum dot nanometer composite film cladded by SiO2 - Google Patents

Preparation method of CdS quantum dot nanometer composite film cladded by SiO2 Download PDF

Info

Publication number
CN103289683A
CN103289683A CN2013101672459A CN201310167245A CN103289683A CN 103289683 A CN103289683 A CN 103289683A CN 2013101672459 A CN2013101672459 A CN 2013101672459A CN 201310167245 A CN201310167245 A CN 201310167245A CN 103289683 A CN103289683 A CN 103289683A
Authority
CN
China
Prior art keywords
quantum dot
cds quantum
sio
preparation
cds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013101672459A
Other languages
Chinese (zh)
Inventor
秦娟
王国华
陈振一
廖阳
李季戎
钱隽
史伟民
孙纽一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Original Assignee
University of Shanghai for Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN2013101672459A priority Critical patent/CN103289683A/en
Publication of CN103289683A publication Critical patent/CN103289683A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Luminescent Compositions (AREA)

Abstract

The invention relates to a preparation method of a CdS quantum dot nanometer composite film cladded by SiO2 through a sol gelation process, belonging to the technical field of preparation of semiconductor nanometer composite films. The cladded CdS quantum dot has excellent dispersity and the light emitting efficiency and corrosion resistance are improved. The preparation method specifically comprises the steps of: utilizing cadmium nitrate, sodium sulfide and TGA (thioglycollic acid) as main raw materials to prepare a high-concentration CdS quantum dot solution through a chemical water bath method; utilizing TEOS (tetraethyl orthosilicate), absolute ethyl alcohol, concentrated hydrochloric acid and deionized water as raw materials to prepare SiO2 sol; and then, mixing the sole with the quantum dot according to a certain mol ratio, spin coating to obtain the CdS quantum dot nanometer composite film cladded by SiO2; and drying the film sample, putting the film sample in a tubular annealing furnace, and annealing the film sample in N2 atmosphere to obtain the CdS quantum dot nanometer composite film cladded by SiO2. The CdS nanometer granules are compounded with other substrates to beneficially improve the photoelectric property of CdS and expand the application field of a CdS material.

Description

A kind of SiO 2The preparation method of the CdS quantum dot nano laminated film that coats
Technical field
The present invention relates to a kind of Prepared by Sol Gel Method SiO that utilizes 2The method of the CdS quantum dot nano laminated film that coats belongs to the semiconductor nanometer compound film preparing technical field.
Background technology
Sol-gel method is a kind of nanometer grain preparation method commonly used, mainly is used in the earliest in pottery and the glasswork.But, after utilizing these class methods to make nano particle both at home and abroad, it is received publicity again.Sol-gel method mainly comprises several aspects, at first precursor (being metal-salt or inorganic salt) is dissolved in the solvent (organic solvent or water); Solute is hydrolyzed in solvent or alcoholysis forms colloidal sol gradually; Colloidal sol forms gel through polycondensation then; At last gel is heat-treated (dry, roasting), thereby make nano particle.
CdS is a kind of typical II-VI family semi-conductor, and its energy gap is 2.42 eV, has wideer energy gap.The CdS quantum dot is a kind of important semi-conductor nano particles then, has good optical performance and surface modificability, can be widely used in the fields such as light emitting devices, laser, biological detection and analysis of fluorescence labeling.But under the optical excitation condition since photo-generated carrier easily compound its quantum yield that makes is lower, and the photoresponse of CdS is limited in scope, and limited it in the application of photocatalysis field.Because SiO 2The surface has the silicon hydroxyl, thereby it is suitable for the finishing of material, SiO very much 2After being coated on outside the nano material, both can having made material have good dispersiveness and prevent its reunion, and also can make nanoparticle have better erosion resistance, coated Si O 2The luminous efficiency of back CdS also can be greatly improved.
The CdS quantum dot has wideer absorbing wavelength band, higher emissive porwer and light stability preferably, not only can control emission and absorbing wavelength by regulating self size, to satisfy different solar cells to the absorption of light, and because its absorption spectrum and emission spectrum are overlapping less, enough Stokes shifts being arranged to reduce the heavily absorption of light beam, increased the incident light subnumber, is a kind of more satisfactory fluorescence luminescent material.SiO 2Has very high transmissivity, very low scattered power, SiO 2Be coated on the CdS quantum dot effect that play the protection quantum dot, improves luminous efficiency.CdS quantum dot nano laminated film is as the nano compound film of economical and efficient, at photocatalyst material, and photoelectric device, the aspects such as conversion layer as under the fluorescent solar condensing apparatus also have wide practical use.Have very high transmitance, the photoexcitation peak value of laminated film and its absorption peak exist a Stokes displacement energy to improve the spectrum efficiency of conversion, improve the assimilated efficiency of solar cell.Under the situation that does not change device material and structure, convert solar spectrum to frequency range that existing device has higher absorption, when improving battery conversion efficiency, can effectively reduce production costs.Introduce nano material, utilize its higher photochemical stability, reach the purpose of accurate spectral conversion.
At present, the preparation method of CdS quantum dot nano film mainly is the chemical bath method.There is not patent definitely to put down in writing and uses sol-gel method, preparation SiO 2The report of the CdS quantum dot nano laminated film that coats.
Summary of the invention
The purpose of this invention is to provide a kind of SiO 2The preparation method of the CdS quantum dot nano laminated film that coats.For this reason, use cadmium nitrate, sodium sulphite, tetraethoxy (TEOS), dehydrated alcohol and thioglycolic acid (TGA) they are main raw material, and a kind of sol-gel method is provided, preparation SiO 2The CdS quantum dot nano laminated film that coats, it has following technological process and step:
1) SiO 2Colloidal sol: in reactor, at first use TEOS, dehydrated alcohol, concentrated hydrochloric acid, deionized water are raw material, with TEOS and dehydrated alcohol certain volume ratio, namely mix with volume ratio=1:1, carry out magnetic agitation under the normal temperature; In addition, dripping concentrated hydrochloric acid in deionized water, regulate the pH value of requirement that this solution reaches, is 2 ~ 5, and volume ratio (being above-mentioned TEOS and dehydrated alcohol) the same volume ratio of tool with this deionized water hydrochloric acid soln and TEOS is 1:1; The mixed system for the treatment of dehydrated alcohol and TEOS stirs certain hour, after being 30min, reactor is put into the heated water bath magnetic stirrer, under certain temperature, general temperature is set at 50 ~ 70 ℃, drips the deionized water hydrochloric acid soln of above-mentioned preparation while stirring, stir the some time, after 2 ~ 8 hours, reaction finishes, SiO 2Colloidal sol is stand-by;
2) CdS quantum dot solution preparation: in another reactor, with cadmium nitrate, sodium sulphite, TGA is main raw material, takes by weighing cadmium nitrate and sodium sulphite that mol ratio is 1:1 ~ 1:8, is dissolved in respectively in the deionized water, it is stirred again, and solute is fully dissolved; Add a certain amount of TGA in cadmium nitrate solution, adopt both certain mol proportions, its mol ratio is that following scope is TGA:Cd 2+=1.5:1 ~ 3:1; After adding TGA, the cadmium nitrate solution of clarification becomes oyster white rapidly originally, slowly drips strong aqua to this solution again and becomes again till the clarification; With TGA, the mixed system at reactor of cadmium nitrate and ammoniacal liquor is put into the water-bath magnetic stirring apparatus, drips sodium sulfide solution under the constant temperature while stirring, and wherein design temperature is 50 ~ 70 ℃, and reaction system is variable color gradually, by the initial faint yellow glassy yellow that becomes.Water-bath for some time, the time is controlled at 20min ~ 60min, and CdS quantum dot concentration is 0.1mol/L; The high concentrations of Cd S quantum dot solution of preparation, place normal temperature 24 h after, adopt acetone and deionized water carries out repeatedly centrifugal to it and clean;
3) CdS quantum dot nano laminated film processed: the CdS quantum dot with obtaining after the above-mentioned eccentric cleaning process, be dissolved in the small quantity of deionized water, according to different Cd:Si mol ratios, add last 1) prepared SiO 2Colloidal sol, and carry out magnetic agitation, the time is 1h; At last, by spin-coating method, by with per minute rotation more than or equal under 700 rotary speeds, can be under 700~2000rpm, the colloidal sol of reaction gained is clean on glass what handled, carry out the whirl coating film forming; The film sample that makes is put into loft drier, and regularly dry, the time is 10min, sends in the tubular type annealing furnace, at N again 2Carry out the annealing of timing constant temperature under the middle protection, temperature is 100 ℃ ~ 200 ℃, and annealing time is 10min ~ 100min, can obtain SiO 2The CdS quantum dot nano laminated film that coats.
Conclude the present invention, i.e. SiO 2The preparation of the CdS quantum dot nano laminated film that coats at first is to be equipped with the CdS quantum dot with the chemical bath legal system, its again with SiO 2Colloidal sol is according to certain C d:Si mixed in molar ratio, and behind the one-tenth mixed sols, spin-coating film is dried and obtained SiO 2The CdS quantum dot nano laminated film that coats, and to preparation SiO 2The CdS quantum dot nano laminated film that coats has carried out sign and the performance analysis of pattern.
Description of drawings
The atomic force microscope figure of Fig. 1 CdS quantum dot nano laminated film.
The X-ray diffractogram of Fig. 2 CdS quantum dot nano film.
The UV, visible light light transmission rate collection of illustrative plates of CdS quantum dot nano laminated film under the different Cd:Si mol ratio of Fig. 3 condition.
Embodiment
Embodiment
1, the cleaning of glass substrate:
Simple glass is carried out surface cleaning processing work, put into the Triton aqueous solution, acetone soln, raw spirit solution and deionized water successively each ultrasonic 15 minutes, then glass substrate is dried.
2, SiO 2The preparation of colloidal sol:
With TEOS, dehydrated alcohol, concentrated hydrochloric acid, deionized water are raw material, and TEOS and dehydrated alcohol with the mixed of volume ratio=1:1, are carried out magnetic agitation at normal temperatures; In addition, in deionized water, drip concentrated hydrochloric acid, regulate this hydrochloric acid soln pH value and be 2-3, after treating the mixed system stirring 30min of dehydrated alcohol and TEOS, its mixed system is put into the heating in water bath magnetic stirrer, and temperature is 50 ℃, drips the hydrochloric acid soln of above-mentioned preparation while stirring, stir after 2 hours, reaction finishes stand-by;
3, the chemical bath legal system is equipped with high concentrations of Cd S quantum dot solution:
With cadmium nitrate, sodium sulphite, TGA is main raw material, takes by weighing cadmium nitrate and sodium sulphite that mol ratio is 1:2, is dissolved in the deionized water respectively, and it is stirred, and makes it abundant dissolving; In cadmium nitrate solution, add a certain amount of TGA, adopting both mol ratios is TGA:Cd 2+=1.5:1.Slowly drip strong aqua, become clarification to this solution till; With TGA, the mixed system of cadmium nitrate and ammoniacal liquor is put into the heating in water bath magnetic stirring apparatus, and temperature is 60 ℃, drips sodium sulfide solution while stirring; Water-bath time 30min.With the CdS quantum dot solution for preparing, place normal temperature 24h after, adopt acetone and deionized water carries out repeatedly centrifugal to it and clean.
4, revolve glue and make laminated film:
According to Cd:Si mol ratio 1:8, with the SiO of CdS quantum dot for preparation before adding 2Carry out magnetic agitation 1H in the colloidal sol.By spin-coating method the colloidal sol that reacts gained is carried out the whirl coating film forming under the 900r/min condition.The film sample that makes is put into the dry 10min of loft drier, send into then in the tubular type annealing furnace, at N 2In anneal, temperature is 100 ℃, annealing time is 30min, can obtain SiO 2The CdS quantum dot nano laminated film that coats.
5, laminated film characterizes: preparation SiO 2The CdS quantum dot nano laminated film that coats, (AFM) observes its pattern with atomic force microscope, and the reflection laminated film is more smooth; X-ray diffractogram (XRD) characterizes, and SiO is described 2And the CdS phase structure exists simultaneously; Under different Cd:Si mol ratio 1:1~1:300 condition, UV, visible light light transmission rate to CdS quantum dot nano laminated film, carried out performance analysis, its UV, visible light light transmission rate (Fig. 3) also increases successively, when wavelength〉during 300nm, light transmission rate is corresponding successively respectively, from nearly 30% to being higher than 80%, for the fluorescent solar condensing apparatus transmitance high as far as possible to visible light wave range, when Si:Cd mol ratio ratio is about below 25, it is 60% comparatively appropriate when above that the whole transmitance of CdS quantum dot nano laminated film has reached.
CdS quantum dot nano laminated film, it is as the nano compound film of economical and efficient, and at photocatalyst material, photoelectric device etc. aspect has a wide range of applications.Simultaneously, preparation method's of the present invention success, the characteristics of this nano compound film preparation work due to: be equipped with CdS quantum dot method maturation, simple as the chemical bath legal system, the CdS quantum dot size of preparation is unified; The CdS quantum dot nano laminated film of Prepared by Sol Gel Method, surperficial SiO 2The CdS even particle distribution that coats, the phenomenon that film surface was tied and was adsorbed in the macromolecular mass coacervation does not appear in the granular size homogeneous; The surface particle of this laminated film, it is comparatively tight to arrange, and formed film surface is more smooth; SiO 2Adhering to of the CdS quantum dot nano laminated film that coats and substrate is powerful higher, and higher transmittance and good optical performance are arranged; This technical equipment is simple, easy handling, good reproducibility.

Claims (5)

1. SiO 2The preparation method of the CdS quantum dot nano laminated film that coats is characterized in that being equipped with CdS quantum dot, SiO then with the chemical bath legal system 2Colloidal sol mixes with the CdS quantum dot, and the colloidal sol spin-coating film obtains SiO 2The CdS quantum dot nano laminated film that coats, it has following technological process and step:
1) SiO 2Colloidal sol: in reactor, at first use the TEOS(tetraethoxy), dehydrated alcohol, concentrated hydrochloric acid, deionized water are raw material, with TEOS and dehydrated alcohol with certain volume than mixing, carry out magnetic agitation under the normal temperature; In addition, dripping concentrated hydrochloric acid in deionized water, regulate this solution and reach requirement pH value, is above-mentioned TEOS and dehydrated alcohol with this deionized water hydrochloric acid soln and TEOS() the same volume ratio of tool; After the mixed system for the treatment of dehydrated alcohol and TEOS regularly stirs, reactor is put into the heated water bath magnetic stirrer, under constant temperature, drip the deionized water hydrochloric acid soln of above-mentioned preparation while stirring, stirred some hours, become SiO 2Colloidal sol is stand-by;
2) CdS quantum dot solution preparation: in another reactor, with cadmium nitrate, sodium sulphite, TGA is main raw material, takes by weighing cadmium nitrate and sodium sulphite that mol ratio is 1:1 ~ 1:8, is dissolved in respectively in the deionized water, it is stirred again, and solute is fully dissolved; In cadmium nitrate solution, add a certain amount of TGA, adopt both certain mol proportions, add TGA again after, the cadmium nitrate solution of clarification becomes oyster white rapidly originally, slowly drips strong aqua to this solution again and becomes again till the clarification; With TGA, the mixed system at reactor of cadmium nitrate and ammoniacal liquor is put into the water-bath magnetic stirring apparatus, drips sodium sulfide solution under the constant temperature while stirring, and reaction system is variable color gradually, by the initial faint yellow glassy yellow that becomes.Water-bath for some time, obtaining CdS quantum dot concentration is 0.1mol/L; Be placed in the normal temperature behind 24 h, adopt acetone and deionized water carries out repeatedly centrifugal to it and clean;
3) CdS quantum dot nano laminated film processed: the CdS quantum dot with obtaining after the above-mentioned eccentric cleaning process, be dissolved in the small quantity of deionized water, according to different Cd:Si mol ratios, add last 1) prepared SiO 2Colloidal sol, and carry out magnetic agitation, the time is 1h, again by with the per minute rotation more than or equal under 700 rotary speeds, will be to the colloidal sol of reaction gained, clean on glass what handled, carry out the whirl coating film forming; After the film sample drying, be fed in N 2The tubular type annealing furnace of middle protection is annealed under the timing constant temperature, can obtain SiO 2The CdS quantum dot nano laminated film that coats.
2. according to the preparation SiO described in the claim 1 2The method of the CdS quantum dot nano laminated film that coats is characterized in that preparing SiO 2During colloidal sol, TEOS and dehydrated alcohol with the mixed of volume ratio=1:1, are carried out magnetic agitation.Drip concentrated hydrochloric acid in deionized water, regulating this hydrochloric acid soln pH value is 2 ~ 5, and the volume ratio of deionized water and TEOS is similarly 1:1.After treating the mixed system stirring 30min of dehydrated alcohol and TEOS, put into the heated water bath magnetic stirrer, design temperature is 50 ~ 70 ℃, drips above-mentioned aqueous hydrochloric acid, stirs 2 ~ 8 hours.
3. according to the preparation SiO described in the claim 1 2The method of the CdS quantum dot nano laminated film that coats is characterized in that adopting the preparation of high concentrations of Cd S quantum dot solution, and the cadmium nitrate that takes by weighing earlier and sodium sulphite mol ratio are 1:1 ~ 1:8.In cadmium nitrate solution, add a certain amount of TGA, adopt both mol ratio TGA:Cd 2+=1.5:1 ~ 3:1.With TGA, the mixed system of cadmium nitrate and ammoniacal liquor is put into the heating in water bath magnetic stirring apparatus, and design temperature is 50 ~ 70 ℃, and the reaction times is 20min ~ 60min.
4. according to the preparation SiO described in the claim 1 2The method of the CdS quantum dot nano laminated film that coats is characterized in that CdS quantum dot and SiO 2What colloidal sol mixed can be according to different Cd:Si mol ratios, and the magnetic agitation time is 1h, spin-coating method to the colloidal sol of reaction gained under 700r/min ~ 2000r/min condition, clean whirl coating film forming on glass, sample is put into the dry 10min of loft drier, at N 2In anneal, temperature is 100 ℃ ~ 200 ℃, annealing time is 10min ~ 100min.
5. according to claim 1, the preparation SiO described in 4 2The method of the CdS quantum dot nano laminated film that coats is characterized in that CdS quantum dot and SiO 2The Cd:Si mol ratio that colloidal sol mixes can be at 1:1 ~ 1:300 category, and its UV, visible light light transmission rate also increases successively, when wavelength〉during 300nm, light transmission rate is corresponding successively respectively, from nearly 30% to being higher than 80%, for the fluorescent solar condensing apparatus transmitance high as far as possible to visible light wave range, when Si:Cd mol ratio ratio is about below 25, it is 60% comparatively appropriate when above that the whole transmitance of CdS quantum dot nano laminated film has reached.
CN2013101672459A 2013-05-09 2013-05-09 Preparation method of CdS quantum dot nanometer composite film cladded by SiO2 Pending CN103289683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013101672459A CN103289683A (en) 2013-05-09 2013-05-09 Preparation method of CdS quantum dot nanometer composite film cladded by SiO2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013101672459A CN103289683A (en) 2013-05-09 2013-05-09 Preparation method of CdS quantum dot nanometer composite film cladded by SiO2

Publications (1)

Publication Number Publication Date
CN103289683A true CN103289683A (en) 2013-09-11

Family

ID=49091230

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013101672459A Pending CN103289683A (en) 2013-05-09 2013-05-09 Preparation method of CdS quantum dot nanometer composite film cladded by SiO2

Country Status (1)

Country Link
CN (1) CN103289683A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103773358A (en) * 2014-01-29 2014-05-07 南京医科大学 Preparation method of CdTe/CdS/ZnS/SiO2 quantum dot
CN104977285A (en) * 2015-07-08 2015-10-14 扬州天辰精细化工有限公司 Preparation method of fluorescent-response silica aerogel thin film
CN105177499A (en) * 2015-05-22 2015-12-23 许昌学院 Thermal evaporation method for preparation of near-stoichiometric CdS film with quantum dot as precursor
CN105664714A (en) * 2016-03-30 2016-06-15 上海交通大学 Quantum dot photocatalytic flexible film as well as preparation method and application thereof
WO2017166106A1 (en) * 2016-03-30 2017-10-05 Dow Global Technologies Llc Composite comprising semiconductor nanocrystals and preparing method therefor
CN108534095A (en) * 2018-04-10 2018-09-14 中国科学院长春光学精密机械与物理研究所 A kind of remote fluorescence plate and the preparation method and application thereof based on inorganic binder
CN108998030A (en) * 2018-08-31 2018-12-14 华南农业大学 A kind of composite material and preparation method and application with energy transmission effect
CN109772403A (en) * 2019-01-23 2019-05-21 湘潭大学 A kind of method that coated catalyst is used to that hydrogen sulfide to be catalytically decomposed
CN109821564A (en) * 2019-01-23 2019-05-31 湘潭大学 A kind of preparation method and catalyst of coated catalyst
CN109847765A (en) * 2019-03-08 2019-06-07 西北师范大学 The preparation and the application in evolving hydrogen reaction of CdSNRs@NiSilicate ultrathin nanometer piece composite material
CN110273144A (en) * 2018-03-14 2019-09-24 北京铂阳顶荣光伏科技有限公司 The preparation method of chemical thought method and CIGS photovoltaic module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040266148A1 (en) * 2003-06-27 2004-12-30 Yim Jin Heong Method for producing quantum dot silicate thin film for light emitting device
US20070108502A1 (en) * 2005-11-17 2007-05-17 Sharp Laboratories Of America, Inc. Nanocrystal silicon quantum dot memory device
CN102096272A (en) * 2010-12-31 2011-06-15 上海大学 Evanescent wave excitation semiconductor quantum dot optical fiber amplifier and preparation method thereof
CN102612189A (en) * 2012-02-29 2012-07-25 东南大学 Thin film electroluminescence device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040266148A1 (en) * 2003-06-27 2004-12-30 Yim Jin Heong Method for producing quantum dot silicate thin film for light emitting device
US20070108502A1 (en) * 2005-11-17 2007-05-17 Sharp Laboratories Of America, Inc. Nanocrystal silicon quantum dot memory device
CN102096272A (en) * 2010-12-31 2011-06-15 上海大学 Evanescent wave excitation semiconductor quantum dot optical fiber amplifier and preparation method thereof
CN102612189A (en) * 2012-02-29 2012-07-25 东南大学 Thin film electroluminescence device and manufacturing method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
QI XIAO ET AL.: "Surface-defect-states photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method", 《APPLIED SURFACE SCIENCE》 *
卿胜兰 等: "三阶光学非线性CdS–SiO2 复合薄膜的电化学溶胶–凝胶制备及表征", 《硅 酸 盐 学 报》 *

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103773358A (en) * 2014-01-29 2014-05-07 南京医科大学 Preparation method of CdTe/CdS/ZnS/SiO2 quantum dot
CN103773358B (en) * 2014-01-29 2015-08-19 南京医科大学 CdTe/CdS/ZnS/SiO 2the preparation method of quantum dot
CN105177499B (en) * 2015-05-22 2018-02-06 许昌学院 A kind of quantum dot is the thermal evaporation that forerunner prepares near-stoichiometric CdS film
CN105177499A (en) * 2015-05-22 2015-12-23 许昌学院 Thermal evaporation method for preparation of near-stoichiometric CdS film with quantum dot as precursor
CN104977285A (en) * 2015-07-08 2015-10-14 扬州天辰精细化工有限公司 Preparation method of fluorescent-response silica aerogel thin film
CN105664714A (en) * 2016-03-30 2016-06-15 上海交通大学 Quantum dot photocatalytic flexible film as well as preparation method and application thereof
WO2017166106A1 (en) * 2016-03-30 2017-10-05 Dow Global Technologies Llc Composite comprising semiconductor nanocrystals and preparing method therefor
CN108779391A (en) * 2016-03-30 2018-11-09 陶氏环球技术有限责任公司 Include the compound and preparation method of semiconductor nanocrystal
TWI737694B (en) * 2016-03-30 2021-09-01 美商羅門哈斯電子材料有限公司 Composite comprising semiconductor nanocrystals and method of preparing the same
JP2019518690A (en) * 2016-03-30 2019-07-04 ダウ グローバル テクノロジーズ エルエルシー Composite containing semiconductor nanocrystals and method for preparing the same
CN110273144A (en) * 2018-03-14 2019-09-24 北京铂阳顶荣光伏科技有限公司 The preparation method of chemical thought method and CIGS photovoltaic module
CN108534095A (en) * 2018-04-10 2018-09-14 中国科学院长春光学精密机械与物理研究所 A kind of remote fluorescence plate and the preparation method and application thereof based on inorganic binder
CN108998030A (en) * 2018-08-31 2018-12-14 华南农业大学 A kind of composite material and preparation method and application with energy transmission effect
CN108998030B (en) * 2018-08-31 2021-10-19 华南农业大学 Composite material with energy transfer effect and preparation method and application thereof
CN109772403A (en) * 2019-01-23 2019-05-21 湘潭大学 A kind of method that coated catalyst is used to that hydrogen sulfide to be catalytically decomposed
CN109821564A (en) * 2019-01-23 2019-05-31 湘潭大学 A kind of preparation method and catalyst of coated catalyst
CN109821564B (en) * 2019-01-23 2021-11-19 湘潭大学 Preparation method of coated catalyst and catalyst
CN109772403B (en) * 2019-01-23 2021-11-19 湘潭大学 Method for catalytic decomposition of hydrogen sulfide by using coated catalyst
CN109847765B (en) * 2019-03-08 2021-06-08 西北师范大学 Preparation of CdSNRs @ NiSilicate ultrathin nanosheet composite material and application of composite material in hydrogen evolution reaction
CN109847765A (en) * 2019-03-08 2019-06-07 西北师范大学 The preparation and the application in evolving hydrogen reaction of CdSNRs@NiSilicate ultrathin nanometer piece composite material

Similar Documents

Publication Publication Date Title
CN103289683A (en) Preparation method of CdS quantum dot nanometer composite film cladded by SiO2
CN102250610B (en) Preparation method of composite ZnO-mesoporous silica nanomaterial
CN105329876B (en) A kind of preparation method of boron, nitrogen co-doped carbon quantum dot
CN105428541A (en) Preparation method of upconversion material of core shell structure and application of conversion material in perovskite solar cell
CN113501993B (en) Mn & lt 2+ & gt-doped cesium-lead-halogen perovskite quantum dot film and preparation method thereof
CN103880080A (en) Method for preparing vanadium dioxide powder through hydrothermal auxiliary homogeneous precipitation method
CN104974758B (en) NaYF4:Er3+@NaYF4@TiO2The preparation method of nanocrystalline dye-sensitized solar cell anode material
CN110886017B (en) Preparation method of all-inorganic cesium-lead halogen perovskite nanocrystalline film
CN102784636A (en) Preparation method of spherical gadolinium-doped titanium dioxide photocatalyst
CN105957966A (en) REO (rare earth oxide) down-conversion material perovskite solar cell and preparation method
CN105762283A (en) Perovskite solar cell light-absorbing layer nano sol film-coating solution and preparation method
CN105478153B (en) A kind of CeVO4/Ag/g‑C3N4Composite photo-catalyst and preparation method thereof
CN101538465B (en) Preparation method of rare earth doped TiO*substrate luminescent material
CN106391056A (en) ZnxCdl-xS/TiO2 nanometer photocatalytic material and preparation thereof
CN105536765A (en) Shell-based boron-doped titanium dioxide composite photocatalyst and preparation method thereof
CN108816266B (en) YF/g-C3N4Composite material and application thereof in photocatalysis
CN109181680B (en) Silicon dioxide-rare earth-titanium dioxide hybrid material and preparation method thereof
CN113461341A (en) ZnO quantum dot doped down-conversion antireflection film and preparation method thereof
CN114574197A (en) Carbon dot-organic silicon composite fluorescent material and preparation method and application thereof
CN104326740B (en) A kind of shot coke silicic acid neodymium high temperature pigment of ceramic and preparation method thereof
CN108198940A (en) A kind of reversed structure organic photovoltaic cell of ZnMgO nano-pillars aluminum oxide nanoparticle laminated film as electron transfer layer
CN108531169B (en) Solid-state light-emitting pure carbon nanodot and preparation method thereof, white light LED and visible light communication
CN103484120A (en) Synthesis method of RE-doped upconversion fluorescence nano material
CN109999857B (en) Near-infrared response hollow cerium fluoride up-conversion photocatalytic material and preparation method and application thereof
CN109728171B (en) Electronic transmission layer of perovskite solar cell and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130911