CN112174086A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
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- Engineering & Computer Science (AREA)
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Abstract
The embodiment of the invention relates to the technical field of semiconductor devices, and discloses a semiconductor device and a manufacturing method thereof. In the present invention, the method for manufacturing the semiconductor device includes: forming a sacrificial layer on the surface of the substrate with the protruding structures and/or the recessed structures; wherein the sacrificial layer covers the protruding structures and/or the recessed structures, and the material forming the sacrificial layer is a carbon coating material; forming a structural layer on the sacrificial layer; and releasing the sacrificial layer to form the semiconductor device, so that the flatness of the sacrificial layer formed on the surface of the substrate is not influenced even if the surface of the substrate is uneven, and the flatness of the sacrificial layer is better.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor devices, in particular to a semiconductor device and a manufacturing method thereof.
Background
Surface micromachining is the basis of MEMS (micro-electro-mechanical-system) chip technology. The surface micromachining comprises key steps of film deposition, functional layer patterning, microstructure release, sealing and the like. Where microstructural release refers to the formation of a cavity structure in the bottom of the movable part and the formation of the movable structure, the microstructural release process achieves the release by removing material between the movable structure and the substrate, the material of the layer being removed being commonly referred to as a sacrificial layer.
However, the inventors found that at least the following problems exist in the related art: in the current mass production process, when the surface of the substrate is uneven, the flatness of the sacrificial layer formed on the surface of the substrate is also affected, and the unevenness of the sacrificial layer further affects the subsequent process flow.
Disclosure of Invention
An object of the embodiments of the present invention is to provide a semiconductor device and a method for manufacturing the same, which can prevent a sacrifice layer formed on a surface of a substrate from being affected in flatness even when the surface of the substrate is uneven, and can improve the flatness of the sacrifice layer.
In order to solve the above technical problem, an embodiment of the present invention provides a method for manufacturing a semiconductor device, including: forming a sacrificial layer on the surface of the substrate with the protruding structures and/or the recessed structures; wherein the sacrificial layer covers the protruding structures and/or the recessed structures, and the material forming the sacrificial layer is a carbon coating material; forming a structural layer on the sacrificial layer; and releasing the sacrificial layer to form the semiconductor device.
The embodiment of the invention also provides a semiconductor device which is manufactured by adopting the manufacturing method of the semiconductor device.
Compared with the prior art, the method and the device have the advantages that the sacrificial layer is formed on the surface of the substrate with the protruding structures and/or the recessed structures, the sacrificial layer covers the protruding structures and/or the recessed structures, the sacrificial layer is made of carbon coating materials, the structural layer is formed on the sacrificial layer, the sacrificial layer is released, and the semiconductor device is formed. That is, the sacrificial layer is formed on the surface of the substrate which is not flat, and the carbon coating material has good fluidity because the material for forming the sacrificial layer is the carbon coating material, and the carbon coating material is used as the material for forming the sacrificial layer, so that the protruding structures and/or the recessed structures on the surface of the substrate can be filled more easily because of good fluidity, the flatness of the sacrificial layer formed on the surface of the substrate is good, and the flatness of the structure layer formed on the surface of the sacrificial layer is also good. Meanwhile, the carbon coating material used as the material for forming the sacrificial layer can meet the requirement on the sacrificial layer when the sacrificial layer is released, namely the carbon coating material is adopted to form the sacrificial layer, which is favorable for being well compatible with a semiconductor process; the formed sacrificial layer has certain hardness and strength and can adapt to high temperature and high stress required by a structural layer forming process; and, upon release of the sacrificial layer, the carbon coating material can achieve a higher selectivity ratio than the structural layer and the substrate.
In addition, the mass percentages of the constituent elements of the carbon coating material meet one or any combination of the following conditions: the carbon content is 80% by mass, the hydrogen content is 5% by mass, and the oxygen content is 15% by mass. The embodiment of the invention provides a specific selection mode of the mass percentages of the constituent elements of the carbon coating material, and the carbon coating material meeting the mass percentages has better fluidity, so that the flatness of the sacrificial layer formed on the surface of the uneven substrate is better.
In addition, the carbon coating material is a fullerene-based high polymer material which has better fluidity and can fill and level the protruding structures and/or the sunken structures on the surface of the substrate more easily, so that the flatness of the sacrificial layer formed on the surface of the substrate is better.
In addition, the forming of the sacrificial layer on the surface of the substrate formed with the protruding structures and/or the recessed structures includes: depositing the carbon coating material on the surface of the substrate by adopting a spin coating process to form a carbon coating material layer; curing the layer of carbon coating material; and patterning the cured carbon coating material layer to form the sacrificial layer. The carbon coating material has good spin-coating performance, the thickness of the spin-coated carbon coating material layer can be conveniently controlled by adjusting the spin-coating rotating speed, and the manufacturing cost of equipment used in the spin-coating process is low.
In addition, after the curing the carbon coating material layer and before the patterning the cured carbon coating material layer to form the sacrificial layer, the method further includes: forming an intermediate layer on the carbon coating material layer; wherein the material for forming the intermediate layer is an inorganic material; patterning the intermediate layer; the step of patterning the cured carbon coating material layer to form the sacrificial layer specifically comprises: and transferring the pattern formed by patterning the intermediate layer to the cured carbon coating material layer to form the sacrificial layer. And forming an intermediate layer on the carbon coating material layer, wherein the intermediate layer is made of an inorganic material, and the inorganic material is favorable for protecting the carbon coating material layer and preventing the carbon coating material layer from volatilizing to pollute process equipment in a subsequent process.
In addition, the sacrificial layer is released to form the semiconductor device, specifically: and releasing the sacrificial layer by adopting a plasma ashing technology to form the semiconductor device. The risk of a wet etching process can be avoided by adopting the plasma ashing technology, and the damage to other layers can be avoided.
In addition, the thickness of the sacrificial layer is less than 300 nanometers. The carbon coating material has good fluidity, so that the thickness of the sacrificial layer is easy to control, the thickness of the sacrificial layer is less than 300 nanometers, namely the thickness of the formed sacrificial layer is very thin, the height of a cavity structure obtained after the sacrificial layer is released is lower, and the finally obtained semiconductor device is more miniaturized, has smaller driving voltage and lower power consumption.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a flowchart of a method of manufacturing a semiconductor device according to a first embodiment of the present invention;
fig. 2 is a cross-sectional view during the fabrication of a semiconductor device according to a first embodiment of the present invention;
fig. 3 is a flowchart of a specific implementation procedure of step 101 in a method for manufacturing a semiconductor device according to a first embodiment of the present invention;
fig. 4 is a top view during the fabrication of a semiconductor device according to a first embodiment of the present invention;
fig. 5 is a flowchart of a method of fabricating a semiconductor device according to a second embodiment of the present invention;
fig. 6 is a schematic view of a process of forming a sacrificial layer in a method of manufacturing a semiconductor device according to a second embodiment of the present invention;
fig. 7 is a schematic structural view of a semiconductor device according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that numerous technical details are set forth in order to provide a better understanding of the present application in various embodiments of the present invention. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present invention, and the embodiments may be mutually incorporated and referred to without contradiction.
A first embodiment of the present invention relates to a method for manufacturing a semiconductor device. The core of this embodiment is: forming a sacrificial layer on the surface of the substrate with the protruding structures and/or the recessed structures; the sacrificial layer covers the protruding structures and/or the recessed structures, and the material for forming the sacrificial layer is a carbon coating material; forming a structural layer on the sacrificial layer; the sacrificial layer is released to form the semiconductor device, and the flatness of the sacrificial layer formed on the surface of the substrate cannot be influenced even if the surface of the substrate is uneven, so that the flatness of the sacrificial layer is good. Implementation details of the method for manufacturing a semiconductor device according to this embodiment are described in detail below, and the following description is only provided for convenience of understanding and is not essential to implementing this embodiment.
In this embodiment, the semiconductor device may be an ultrasonic transducer, and the ultrasonic transducer may further be a capacitive ultrasonic transducer or a piezoelectric ultrasonic transducer. In a specific implementation, the semiconductor device may also be another actuator having a movable structure, but this embodiment is not particularly limited to this. Fig. 1 shows a flowchart of a method for manufacturing a semiconductor device in this embodiment, which specifically includes:
step 101: and forming a sacrificial layer on the surface of the substrate on which the protruding structures and/or the recessed structures are formed.
The protruding structure and/or the recessed structure are formed on the substrate, which indicates that the surface of the substrate is not flat, the protruding structure can be an electrode, a supporting bump or any required structure, and the protruding structure and the recessed structure can be structures of the surface of the substrate itself or structures arranged on the surface of the substrate according to actual needs. The material of the substrate can be selected according to actual needs, for example, the material of the substrate can be a semiconductor material, glass, monocrystalline silicon, or the like.
In one example, the protruding structures may be disposed on the substrate surface in a manner that: first, a thin film layer is deposited on the substrate surface, wherein the thin film may be formed by a metal material, or may also be formed by a dielectric material SiO2, etc., and in this embodiment, the thin film is formed by a metal material, which may be Al, but is not limited in this application. And then, patterning the metal Al layer deposited on the surface of the substrate to form a metal bump, wherein the patterning process can be formed by adopting a photoetching process commonly used in a semiconductor process, and the diameter of the metal bump can be smaller than 500 um. Referring to the schematic cross-sectional view of the manufacturing process of the semiconductor device, in S201 in fig. 2, the protruding structure formed on the surface of the substrate 20 is a metal bump 21.
In this embodiment, the material forming the sacrificial layer is a carbon coating material. The main component of the Carbon coating (Spin-On-Carbon, SOC) material is a polymer with high Carbon content. It should be noted that the carbon coating material in this embodiment may be understood as an organic material, and the constituent elements of the organic material are mainly carbon, hydrogen, and oxygen, but not limited thereto, and other elements may be included in the specific implementation. In one example, the mass percentages of the constituent elements of the carbon coating material may satisfy one or any combination of the following conditions: the mass percentage of carbon may be greater than or equal to 75% and less than or equal to 85%, the mass percentage of hydrogen may be greater than or equal to 1% and less than 10%, and the mass percentage of oxygen may be greater than 10% and less than 20%. In another example, the mass percentages of the constituent elements of the carbon coating material may satisfy one or any combination of the following conditions: the carbon coating material comprises the following components in percentage by mass: the mass percent of carbon is 80%, the mass percent of hydrogen is 5%, and the mass percent of oxygen is 15%.
In addition, in this embodiment, the carbon coating material may be a spin-coatable polymer rich in carbon, and may specifically be a fullerene-based polymer material, but the implementation is not limited thereto.
Specifically, a specific manner of forming the sacrificial layer on the surface of the substrate formed with the protruding structures and/or the recessed structures in step 101 may refer to the flowchart in fig. 3, which includes:
step 301: and depositing a carbon coating material on the surface of the substrate by adopting a spin coating process to form a carbon coating material layer.
Specifically, referring to S202 in fig. 2, a carbon coating material layer 22 is formed by uniformly depositing a carbon coating material layer on the surface of the substrate 20 by using a spin coating process. The carbon coating material has good spin coating performance, the spin coating thickness is related to the spin coating rotating speed, and the thickness of the carbon coating material layer finally formed on the surface of the substrate can be adjusted by adjusting the spin coating rotating speed. Since the carbon coating material has good fluidity, the thickness of the carbon coating material layer can be controlled to be thin, and generally, the thickness of the carbon coating material layer can be controlled to be less than 300 nm. It can be seen from S202 in fig. 2 that the carbon coating material layer 22 covers the metal bump 21, and the surface of the carbon coating material layer 22 is flat.
Step 302: the carbon coating material layer is cured.
Specifically, the carbon coating material layer can be cured by a baking process, and can be baked by a hot plate or an oven. The temperature and time of baking can be set according to actual needs, generally the curing temperature is lower than 400 degrees, the curing temperature in this embodiment can be set to 350 degrees, and the curing time can be set to 4 minutes, but not limited to this in practical application.
Step 303: and patterning the cured carbon coating material layer to form a sacrificial layer.
Specifically, first, an etching barrier layer may be coated on the surface of the carbon coating material layer. The barrier layer may be a photoresist material or a metal layer made of a metal mask, and in this embodiment, the photoresist material is used as the barrier layer, but in practical application, the disclosure is not limited thereto. The barrier layer may then be patterned, the process for patterning the barrier layer generally being referred to as a lithographic process, including an exposure development process. A plasma ashing process can then be used to transfer the barrier layer patterned pattern to the carbon coating material layer. The plasma ashing is to selectively etch the surface of the carbon coating material layer by using a plasma etching process to form a pattern, and the gas for plasma ashing the carbon coating material layer can be oxygen, hydrogen, nitrogen and the like. Finally, the barrier layer may be removed, typically by an ashing process if the barrier layer is made of a photoresist material, or by a wet removal process if the barrier layer is made of a metal material. The sacrificial layer 23 is finally formed as shown by S203 in fig. 2.
In this embodiment, referring to fig. 4, a top view of a device in a process of manufacturing a semiconductor device, and the step of patterning the cured carbon coating material layer may be understood as removing unnecessary carbon coating material. The remaining carbon coating material may form a pattern including, for example, the cavity 40 and the channel 41 as shown in S401 of fig. 4. The shape of the cavity 40 can be set according to actual needs, such as a circle, a square, etc., and a circle is taken as an example in this embodiment, but the invention is not limited thereto in practical applications. The number of the channels 41 is greater than or equal to 1, and 4 are taken as an example in the present embodiment, but not limited in practical application.
Step 102: a structural layer is formed on the sacrificial layer.
Specifically, the material of the structural layer may be polysilicon, an insulating medium, such as SiO2, SiN, etc., and the corresponding deposition process may be a chemical vapor deposition process, that is, a material such as SiO2, SiN, etc., is deposited on the sacrificial layer by the chemical vapor deposition process to form the structural layer. The material of the structural layer can also be an organic material, such as polyvinylidene fluoride (PVDF), parylene or a silicon-rich organic layer, and the corresponding deposition process can be a coating process and a low-temperature baking process. Referring to S204 in fig. 2, the structural layer 24 is formed on the sacrificial layer.
Step 103: and releasing the sacrificial layer to form the semiconductor device.
Specifically, first, the structural layer may be patterned to remove the material of the structural layer at undesired locations. Locations where removal is desired include forming release holes over the sacrificial layer. Referring to the top view, S402 in fig. 4, a release hole 43 is opened at the end of the channel 41, and the opening process may be a photolithography etching process of a semiconductor. The release hole 43 may also refer to a sectional view, S205 in fig. 2. The carbon coating material forming the sacrificial layer in the cavity 40 is entirely removed by a plasma ashing process through the release holes 43 and the channels 41, and a cavity or an overhead structure is formed under the structural layer, thereby obtaining a movable structure. The sacrificial layer is removed by adopting a plasma ashing technology, so that the risk of a wet etching process can be avoided, and the damage to other layers can be avoided. It will be appreciated that the release rate of the sacrificial layer, i.e. the rate of sacrificial layer removal, is positively correlated with the width of the channel 41.
In addition, whether to seal the release hole 43 may be selected according to actual requirements, for example, if necessary, the release hole 43 may be sealed by depositing a layer of sealing material on the surface of the structural layer to block the release hole 43, the sealing material may be usually silicon oxide, or the release hole may be sealed by melting a material with poor fluidity. The release hole 43 may be sealed with a sealing material 44, referring to S206 in fig. 2. The cross-sectional view of the finally formed semiconductor device may be S206 in fig. 2.
In one example, the resulting semiconductor device may be an ultrasonic transducer. The ultrasonic transducer is an energy conversion device and has the working principle that: the piezoelectric effect converts the electric signal into mechanical vibration, when the ultrasonic transducer is electrified with an electric pulse signal, the mechanical vibration of the vibrator can generate an ultrasonic signal, and then the ultrasonic signal is transmitted out. In a specific process flow, after the sacrificial layer is removed, a cavity or an overhead structure is formed below the structural layer, so that the movable structure can be realized.
Compared with the prior art, in the embodiment, the sacrificial layer is formed on the surface of the substrate with the protruding structures and/or the recessed structures, the sacrificial layer covers the protruding structures and/or the recessed structures, the sacrificial layer is made of a carbon coating material, the structural layer is formed on the sacrificial layer, and the sacrificial layer is released to form the semiconductor device. That is, the sacrificial layer is formed on the surface of the substrate which is not flat, and the carbon coating material has good fluidity because the material for forming the sacrificial layer is the carbon coating material, and the carbon coating material is used as the material for forming the sacrificial layer, so that the protruding structures and/or the recessed structures on the surface of the substrate can be filled more easily because of good fluidity, the flatness of the sacrificial layer formed on the surface of the substrate is good, and the flatness of the structure layer formed on the surface of the sacrificial layer is also good. Meanwhile, the carbon coating material used as the material for forming the sacrificial layer can meet the requirement on the sacrificial layer when the sacrificial layer is released, namely the carbon coating material is adopted to form the sacrificial layer, which is favorable for being well compatible with a semiconductor process; the formed sacrificial layer has certain hardness and strength and can adapt to high temperature and high stress required by a structural layer forming process; and, upon release of the sacrificial layer, the carbon coating material can achieve a higher selectivity ratio than the structural layer and the substrate.
A second embodiment of the present invention relates to a method for manufacturing a semiconductor device. The second embodiment is a further improvement of the first embodiment, and the main improvement is that in the second embodiment of the present invention, an intermediate layer is added between the carbon coating material layer and the structural layer, and since the material of the intermediate layer is an inorganic material, the intermediate layer can be used to protect the carbon coating material layer, which is beneficial to preventing the carbon coating material layer from volatilizing and polluting process equipment in subsequent processes. As shown in fig. 5, the method for manufacturing a semiconductor device according to this embodiment may include:
step 501: and depositing a carbon coating material on the surface of the substrate by adopting a spin coating process to form a carbon coating material layer.
Step 502: the carbon coating material layer is cured.
Step 503: an intermediate layer is formed on the carbon coating material layer.
The material forming the intermediate layer is mainly an inorganic material, such as silicon, siloxane, or SiO 2. Forming an intermediate layer on the surface of the carbon coating material layer. The material of the intermediate layer can be used for protecting the carbon coating material layer and preventing the carbon coating material from volatilizing to pollute the process equipment in the subsequent process.
Specifically, the intermediate layer may be formed on the carbon coating material layer in a manner of: the intermediate layer is formed by depositing an inorganic material on the surface of the carbon coating material layer by a spin coating process, and then curing the inorganic material deposited on the surface of the carbon coating material layer, for example, by baking.
In one example, reference may be made to fig. 6, where fig. 6 is a schematic diagram of a process of forming a sacrificial layer in this embodiment mode. S601 to S602 are substantially the same as S201 to S202 in fig. 2, and are not repeated herein to avoid repetition. At S603 in fig. 6, the formation of the intermediate layer 61 on the carbon coating material layer 22 is realized.
Step 504: the intermediate layer is patterned.
In particular, a photolithography process may be used to pattern the intermediate layer. Firstly, spin-coating a photoresist material on the surface of the middle layer, forming a required pattern on the photoresist, and then transferring the formed pattern to the middle layer by adopting an etching process, thereby realizing the patterning of the middle layer.
In one example, referring to fig. 6, S604 shows that the etching stop layer 62 is formed by spin-coating a photoresist material on the surface of the intermediate layer 61, and S605 shows that a desired pattern is formed on the photoresist, i.e., the etching stop layer is patterned, so as to obtain the patterned etching stop layer 63. Then, referring to S606, the pattern on the patterned etching stop layer 63 is transferred onto the intermediate layer 61 by using an etching process, so as to obtain a patterned intermediate layer 64.
Step 505: and transferring the pattern formed by patterning the intermediate layer to the cured carbon coating material layer to form a sacrificial layer.
Specifically, the intermediate layer may be used as a hard mask, and a pattern on the hard mask may be transferred to the cured carbon coating material layer, for example, the pattern on the hard mask may be etched onto the carbon coating material layer to form a sacrificial layer, and at the same time, volatilization of the carbon coating material forming the sacrificial layer at a high temperature may be greatly reduced.
In an example, referring to fig. 6, in which the step S606 is implemented to transfer the pattern obtained by patterning the intermediate layer onto the cured carbon coating material layer, form the sacrificial layer 23, and finally remove the patterned etching stop layer 63, the removal process in this embodiment may be an ashing process, but is not limited in practical application. Referring to S607 in fig. 6, in the present embodiment, the patterned intermediate layer 64 is remained before releasing the sacrificial layer to protect the sacrificial layer 23, so as to prevent the carbon coating material forming the sacrificial layer 23 from volatilizing to contaminate the processing equipment in the subsequent process. In a specific implementation, the material of the intermediate layer may remain in the device structure and is not removed after the sacrificial layer is removed, or the intermediate layer may be removed after the sacrificial layer is released, which is not specifically limited to this embodiment.
Step 506: a structural layer is formed on the sacrificial layer.
Step 507: and releasing the sacrificial layer to form the semiconductor device.
Compared with the prior art, in this embodiment, after curing the carbon coating material layer, the cured carbon coating material layer is patterned, before forming the sacrificial layer, the method further includes: forming an intermediate layer on the carbon coating material layer; wherein, the material for forming the intermediate layer is an inorganic material; patterning the intermediate layer; patterning the cured carbon coating material layer to form a sacrificial layer, specifically: and transferring the pattern formed by patterning the intermediate layer to the cured carbon coating material layer to form a sacrificial layer. And forming an intermediate layer on the carbon coating material layer, wherein the intermediate layer is made of an inorganic material, and the inorganic material is favorable for protecting the carbon coating material layer and preventing the carbon coating material layer from volatilizing to pollute process equipment in a subsequent process.
The steps of the above methods are divided for clarity, and the implementation may be combined into one step or split some steps, and the steps are divided into multiple steps, so long as the same logical relationship is included, which are all within the protection scope of the present patent; it is within the scope of the patent to add insignificant modifications to the algorithms or processes or to introduce insignificant design changes to the core design without changing the algorithms or processes.
A third embodiment of the present invention relates to a semiconductor device, and as shown in fig. 7, the semiconductor device in this embodiment can be manufactured by the manufacturing method of the semiconductor device in the first or second embodiment. The semiconductor device in fig. 7 may include a substrate 20, the substrate 20 has a protruding structure 21 thereon, and a cavity structure 71 is formed between the structure layer 24 and the substrate 20, and in the semiconductor device manufactured by the above-mentioned method for manufacturing a semiconductor device, the structure layer 24 may be finally realized as a movable mechanism.
In one example, the semiconductor device may be an ultrasonic transducer, and the ultrasonic transducer may be a capacitive ultrasonic transducer or a piezoelectric ultrasonic transducer.
In one example, the height of the cavity structure is less than 300 nanometers, which allows the semiconductor device to be more miniaturized, with less drive voltage and less power consumption. The semiconductor device in the embodiment is manufactured by the manufacturing method of the semiconductor device in the first or second embodiment, and the carbon coating material layer is formed by depositing the carbon coating material on the surface of the substrate, so that the carbon coating material has good fluidity, the carbon coating material layer can be made thin, the formed sacrificial layer is thin, and finally the height of the cavity structure formed after the sacrificial layer is released is very low and can be controlled to be less than 300 nanometers.
Compared with the prior art, the semiconductor device in the embodiment is manufactured by the manufacturing method of the semiconductor device in the first or second embodiment, the sacrificial layer is formed on the surface of the substrate which is not flat, the carbon coating material has good fluidity because the material for forming the sacrificial layer is the carbon coating material, and the carbon coating material is used as the material for forming the sacrificial layer and is good in fluidity, so that the protruding structure and/or the recessed structure on the surface of the substrate can be filled and leveled more easily, the flatness of the sacrificial layer formed on the surface of the substrate is good, and the flatness of the structural layer formed on the sacrificial layer is also good. Meanwhile, the carbon coating material used as the material for forming the sacrificial layer can meet the requirement on the sacrificial layer when the sacrificial layer is released, namely the carbon coating material is adopted to form the sacrificial layer, which is favorable for being well compatible with a semiconductor process; the formed sacrificial layer has certain hardness and strength and can adapt to the temperature and stress when the structural layer is formed; and, when the sacrificial layer is released, the sacrificial layer can achieve a higher selectivity ratio than the structural layer and the substrate. In addition, because the carbon coating material is used as the material for forming the sacrificial layer, the sacrificial layer is easier to be made thin, and after the sacrificial layer is released, the height of a cavity structure between the substrate and the structural layer is lower, so that the semiconductor device is more miniaturized, the driving voltage is lower, and the power consumption is lower.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in practice.
Claims (12)
1. A method for manufacturing a semiconductor device, comprising:
forming a sacrificial layer on the surface of the substrate with the protruding structures and/or the recessed structures; wherein the sacrificial layer covers the protruding structures and/or the recessed structures, and the material forming the sacrificial layer is a carbon coating material.
Forming a structural layer on the sacrificial layer;
and releasing the sacrificial layer to form the semiconductor device.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the mass percentages of the constituent elements of the carbon coating material satisfy one or any combination of the following conditions:
the mass percent of the carbon is greater than or equal to 75% and less than or equal to 85%, the mass percent of the hydrogen is greater than or equal to 1% and less than 10%, and the mass percent of the oxygen is greater than 10% and less than 20%.
3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the mass percentages of the constituent elements of the carbon coating material satisfy one or any combination of the following conditions:
the carbon content is 80% by mass, the hydrogen content is 5% by mass, and the oxygen content is 15% by mass.
4. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the carbon coating material is a fullerene-based polymer material.
5. The method for manufacturing a semiconductor device according to claim 1, wherein the forming of the sacrificial layer on the surface of the substrate on which the protruding structures and/or the recessed structures are formed comprises:
depositing the carbon coating material on the surface of the substrate by adopting a spin coating process to form a carbon coating material layer;
curing the layer of carbon coating material;
and patterning the cured carbon coating material layer to form the sacrificial layer.
6. The method of manufacturing a semiconductor device according to claim 5, wherein after the curing the carbon coating material layer and before the patterning the cured carbon coating material layer to form the sacrificial layer, the method further comprises:
forming an intermediate layer on the carbon coating material layer; wherein the material for forming the intermediate layer is an inorganic material;
patterning the intermediate layer;
the step of patterning the cured carbon coating material layer to form the sacrificial layer specifically comprises:
and transferring the pattern formed by patterning the intermediate layer to the cured carbon coating material layer to form the sacrificial layer.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the releasing the sacrificial layer to form the semiconductor device specifically comprises:
and releasing the sacrificial layer by adopting a plasma ashing technology to form the semiconductor device.
8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the thickness of the sacrificial layer is less than 300 nm.
9. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, which is an ultrasonic transducer.
10. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 7.
11. The semiconductor device of claim 10, wherein a height of a cavity structure formed between the substrate and the structural layer is less than 300 nanometers.
12. The semiconductor device according to claim 10 or 11, wherein the semiconductor device is an ultrasonic transducer.
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