CN112164486A - HDMI high-definition data line and manufacturing method thereof - Google Patents
HDMI high-definition data line and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides an HDMI high-definition data line which comprises the following raw materials in percentage by weight: 0.2-0.6% of Mn, 0.2-0.4% of Ni, 0.1-0.4% of Si, 1.2-1.5% of Sns, 5-10% of a dispersing agent, 1-5% of a toughness modifier and the balance of copper. According to the invention, Mn, Ni, Si, Sn and copper are used as alloy main materials, and the added dispersing agent and the toughness modifier can achieve a synergistic effect, so that the efficiency of synergistically improving the conductivity and the toughness of the alloy is achieved; the added dispersing agent adopts nano medium as a dispersing medium body, the nano medium is small in particle size and high in specific surface area, and bears dispersing particles, and the dispersing particles are prepared from silicon dioxide and activating solution, so that the active dispersing capacity of the dispersing agent is enhanced, and the raw materials are uniformly dispersed in the alloy raw materials.
Description
Technical Field
The invention relates to the technical field of data lines, in particular to an HDMI high-definition data line and a manufacturing method thereof.
Background
The traditional informatization application system is a relational database management system which is popular at present, and almost all developers can suffer from the following problems: on the one hand, they wish to use object-oriented development technologies such as Java, C + +, COM, because these technologies have higher programming efficiency and provide richer data models; the data line is used for connecting the mobile equipment and the computer to achieve the purpose of data transmission or communication. The popular point is that the communication tool is a channel tool which is used for connecting a computer and mobile equipment and transmitting files such as videos, ringtones, pictures and the like;
the conventional HDMI high-definition data line is mostly prepared from a copper alloy material, and although the conductivity can be achieved, the HDMI high-definition data line has poor toughness and is easy to break, and the service life of the HDMI high-definition data line is shortened.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide an HDMI high-definition data line and a manufacturing method thereof.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the invention provides an HDMI high-definition data line which comprises the following raw materials in percentage by weight:
0.2-0.6% of Mn, 0.2-0.4% of Ni, 0.1-0.4% of Si, 1.2-1.5% of Sns, 5-10% of a dispersing agent, 1-5% of a toughness modifier and the balance of copper;
the preparation method of the dispersing agent comprises the following steps:
s1: preparing a nano medium: adding 30-40 parts of bismuth nitrate, 5-10 parts of sodium molybdate dihydrate and 2-8 parts of hexadecyl trimethyl ammonium chloride into 35-45 parts of deionized water solution, adding nitric acid to adjust ph to 4.0-5.0, then transferring the raw materials into a reaction kettle together, and obtaining nano medium liquid at the reaction temperature of 125-;
s2: preparation of dispersed particles: mixing silicon dioxide and an activating solution according to a weight ratio of 1:5 to prepare a silicon dioxide dispersion solution, then sending the silicon dioxide dispersion solution into 20-30 parts of titanium dioxide powder, firstly adopting proton irradiation with the irradiation power of 300-1500W and the irradiation time of 20-30min, then sending into a grinding machine for fully grinding at the grinding speed of 1000-1500r/min and the grinding time of 10-20min to obtain dispersed particles;
s3: preparation of a dispersing agent: and (3) conveying the nano medium liquid and the dispersion particles into a magnetization tank for magnetization reaction, wherein the magnetization intensity is 10-20BT, the magnetization time is 15-25min, and finally carrying out hot-pressing calcination, wherein the hot-pressing calcination temperature is 450-550 ℃, and the calcination time is 20-30min, so as to obtain the dispersing promoter.
Preferably, the HDMI high definition data line comprises the following raw materials in percentage by weight:
0.4% of Mn, 0.3% of Ni, 0.25% of Si, 1.35% of Sns, 7.5% of a dispersing agent, 3% of a toughness modifier and the balance of copper.
Preferably, the specific preparation method of the activating solution in the preparation of the dispersing agent comprises the following steps: adding phosphoric acid and sodium chloride into the rare earth lanthanum chloride solution according to the weight ratio of 3:1, and then stirring at a constant speed of 100-150r/min for 15-25min to obtain the silicon dioxide dispersion.
Preferably, the preparation method of the toughness modifier comprises the following steps: the method comprises the steps of firstly sending rare earth Y into a plasma box for irradiation treatment, wherein the irradiation power is 100-500W, the irradiation time is 15-25min, then adding the rare earth Y into a medium solvent body which is 3-5 times of the total amount of the rare earth Y, then adding lamellar nano-particles which are 50-60% of the total amount of the rare earth Y, sending the mixture into a reaction tank, stirring the mixture at the pressure of 2-10Mpa and the rotating speed of 100-500r/min for 20-30min, stirring the mixture at the temperature of 115-125 ℃, then centrifuging and washing, and drying the mixture in a drying box at the temperature of 65-75 ℃ for 12-20h at constant temperature to obtain the toughness modifier.
Preferably, the medium solvent body is formed by mixing a dimethylformamide solution and an ionic liquid according to the weight ratio of 1: 3.
Preferably, the ionic liquid is 1-butyl-3-methylimidazolium tetrafluoroborate.
Preferably, the preparation method of the lamellar nanoparticle comprises the following steps: and (2) sending the bentonite into high-temperature active liquid for ultrasonic dispersion for 10-20min, wherein the ultrasonic power is 100-600W, then sending the bentonite into nitric acid for stripping, the stripping temperature is 55-75 ℃, the stripping time is 10-30min, and finally washing the bentonite for 1-3 times by using boiling water.
Preferably, the preparation method of the high-temperature active liquid comprises the following steps: heating the epoxidized soybean oil to 400 ℃ of 300-.
The invention also provides a method for preparing the HDMI high-definition data line, which comprises the following steps:
the method comprises the following steps: adding Mn, Ni, Si, Sn and copper into a smelting furnace under the protection of nitrogen for smelting, wherein the smelting temperature is 800-900 ℃, and the smelting time is 25-35 min;
step two: then adding a dispersing agent and a toughness modifier, raising the smelting temperature to 900-;
step three: annealing the smelting body to 350-450 ℃, and carrying out annealing and heat preservation for 20-30 min; finally, cooling to room temperature, and then carrying out toughness fatigue treatment to obtain a tough body;
step four: and heating the tough body to 400 ℃ at 300-.
Preferably, the toughness fatigue treatment is carried out by cold rolling for 2-8min by using a cold rolling roller at-5 ℃, then cold rolling for 5-10min by using a hot rolling roller at 100-150 ℃, and repeatedly treating for 1-3 times.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, Mn, Ni, Si, Sn and copper are used as alloy main materials, and the added dispersing agent and the toughness modifier can achieve a synergistic effect, so that the efficiency of synergistically improving the conductivity and the toughness of the alloy is achieved;
the toughness modifier adopts rare earth Y as an active medium, the activity rate is improved after plasma irradiation, a medium solvent body is formed by mixing a dimethyl formamide solution and an ionic liquid, the medium solvent body has strong dispersion activity, the activity of the added rare earth Y is stronger, the high-temperature active liquid is stripped in nitric acid, the high-temperature active liquid is prepared by high-temperature epoxidized soybean oil and sodium sulfamate to enhance the activity reaction of lamellar nanoparticles in an alloy material, the unsaturated chain of the epoxidized soybean oil is completely broken at high temperature, the bentonite is coated under the broken epoxidized soybean oil, so that the bentonite can be better moistened and modified by the sodium sulfamate, and the flexibility of the bentonite is enhanced, meanwhile, due to the laminated structure, after being stripped, the laminated layer becomes thin, the toughness is enhanced, and the excellent toughness regulator can be played in the alloy raw material to improve the toughness of the alloy;
the added dispersing agent adopts a nano medium as a dispersing medium body, and is prepared from silicon dioxide and an activating solution, wherein the nano medium has small particle size and high specific surface area and bears dispersing particles, and the dispersing particles are prepared from the silicon dioxide and the activating solution, so that the active dispersing capacity of the dispersing agent is enhanced, the raw materials are uniformly dispersed in the alloy raw materials and are better dispersed in a matrix in smelting, annealing and hot-pressing cold rolling, the raw materials are promoted to be dispersed and not easy to agglomerate, and the raw materials are better subjected to heat treatment such as annealing and the like, so that the performances of the alloy material, such as conductivity, toughness and the like, are improved in a coordinated mode.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to specific embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1.
The HDMI high-definition data line comprises the following raw materials in percentage by weight:
0.2% of Mn, 0.2% of Ni, 0.1% of Si, 1.2% of Sns, 5% of a dispersing agent, 1% of a toughness modifier and the balance of copper;
the preparation method of the dispersing agent comprises the following steps:
s1: preparing a nano medium: adding 30 parts of bismuth nitrate, 5 parts of sodium molybdate dihydrate and 2 parts of hexadecyl trimethyl ammonium chloride into 35 parts of deionized water to obtain a solution, adding nitric acid to adjust ph to 4.0, and then transferring the raw materials into a reaction kettle together at the reaction temperature of 125 ℃ to obtain a nano medium liquid;
s2: preparation of dispersed particles: mixing silicon dioxide and an activating solution according to a weight ratio of 1:5 to prepare a silicon dioxide dispersion solution, then sending the silicon dioxide dispersion solution into 20 parts of titanium dioxide powder, firstly adopting proton irradiation, wherein the irradiation power is 300W, the irradiation time is 20min, then sending the silicon dioxide dispersion solution into a grinding machine for fully grinding, and the grinding rotating speed is 1000r/min, and the grinding time is 10min to obtain dispersed particles;
s3: preparation of a dispersing agent: and (3) feeding the nano medium liquid and the dispersion particles into a magnetization tank for magnetization reaction, wherein the magnetization intensity is 10BT, the magnetization time is 15min, and finally carrying out hot-pressing calcination, wherein the hot-pressing calcination temperature is 450 ℃ and the calcination time is 20min to obtain the dispersing agent.
The specific preparation method of the activating solution in the preparation of the dispersing agent in the embodiment comprises the following steps: adding phosphoric acid and sodium chloride into a rare earth lanthanum chloride solution according to the weight ratio of 3:1, and then stirring at a constant speed of 100r/min for 15min to obtain a silicon dioxide dispersion liquid.
The preparation method of the toughness modifier in the embodiment is as follows: sending rare earth Y into a plasma box for irradiation treatment, wherein the irradiation power is 100W, the irradiation time is 15min, then adding the rare earth Y into a medium solvent body with the amount of 3 times of the total amount of the rare earth Y, then adding lamellar nano-particles with the total amount of 50% of the rare earth Y, sending the mixture into a reaction tank, stirring the mixture at the rotating speed of 100r/min for 20min at the stirring temperature of 115 ℃, then centrifuging, washing, and drying at constant temperature in a drying box at the temperature of 65 ℃ for 12h to obtain the toughness modifier.
The medium solvent body of the embodiment is formed by mixing a dimethylformamide solution and an ionic liquid according to the weight ratio of 1: 3.
The ionic liquid of this example was 1-butyl-3-methylimidazolium tetrafluoroborate.
The preparation method of the lamellar nanoparticles of the embodiment comprises the following steps: and (2) sending the bentonite into high-temperature active liquid for ultrasonic dispersion for 10min, wherein the ultrasonic power is 100W, then sending the bentonite into nitric acid for stripping, the stripping temperature is 55 ℃, the stripping time is 10min, and finally washing the bentonite for 1 time by using boiling water.
The preparation method of the high-temperature active liquid in the embodiment comprises the following steps: heating epoxidized soybean oil to 300 deg.C, preheating for 10min, heating to 600 deg.C, and maintaining the temperature, adding sodium sulfamate 10% of the epoxidized soybean oil, and stirring for 10min at 210 r/min.
The method for preparing the HDMI high-definition data line comprises the following steps:
the method comprises the following steps: adding Mn, Ni, Si, Sn and copper into a smelting furnace under the protection of nitrogen for smelting, wherein the smelting temperature is 800-900 ℃, and the smelting time is 25 min;
step two: then adding a dispersing agent and a toughness modifier, heating the smelting temperature to 900 ℃, and smelting for 15min to obtain a smelted body;
step three: annealing the smelting body to 350 ℃, and carrying out annealing and heat preservation for 20 min; finally, cooling to room temperature, and then carrying out toughness fatigue treatment to obtain a tough body;
step four: and heating the tough body to 300 ℃, then carrying out wire drawing forming treatment, wherein the forming temperature is 210 ℃, and finally cooling to room temperature to obtain the high-definition data wire.
In the embodiment, the toughness fatigue treatment is carried out by cold rolling for 2min by a cold roll at-5 ℃, then cold rolling for 5min by a hot roll at 100 ℃ and repeatedly treating for 1 time.
Example 2.
The HDMI high-definition data line comprises the following raw materials in percentage by weight:
0.6% of Mn, 0.4% of Ni, 0.4% of Si, 1.5% of Sns, 10% of a dispersing agent, 5% of a toughness modifier and the balance of copper;
the preparation method of the dispersing agent comprises the following steps:
s1: preparing a nano medium: adding 40 parts of bismuth nitrate, 10 parts of sodium molybdate dihydrate and 8 parts of hexadecyl trimethyl ammonium chloride into 45 parts of deionized water to obtain a solution, adding nitric acid to adjust ph to 5.0, and then transferring the raw materials into a reaction kettle together at the reaction temperature of 135 ℃ to obtain a nano medium liquid;
s2: preparation of dispersed particles: mixing silicon dioxide and an activating solution according to a weight ratio of 1:5 to prepare a silicon dioxide dispersion solution, then sending the silicon dioxide dispersion solution into 30 parts of titanium dioxide powder, firstly adopting proton irradiation, wherein the irradiation power is 500W, the irradiation time is 30min, then sending the silicon dioxide dispersion solution into a grinding machine for fully grinding, wherein the grinding speed is 1500r/min, and the grinding time is 20min to obtain dispersed particles;
s3: preparation of a dispersing agent: and (3) feeding the nano medium liquid and the dispersion particles into a magnetization tank for magnetization reaction, wherein the magnetization intensity is 20BT, the magnetization time is 25min, and finally carrying out hot-pressing calcination, wherein the hot-pressing calcination temperature is 550 ℃, and the calcination time is 30min, so as to obtain the dispersing agent.
The specific preparation method of the activating solution in the preparation of the dispersing agent in the embodiment comprises the following steps: adding phosphoric acid and sodium chloride into a rare earth lanthanum chloride solution according to the weight ratio of 3:1, and then stirring at a constant speed of 150r/min for 25min to obtain a silicon dioxide dispersion liquid.
The preparation method of the toughness modifier in the embodiment is as follows: sending rare earth Y into a plasma box for irradiation treatment, wherein the irradiation power is 500W, the irradiation time is 25min, then adding the rare earth Y into a medium solvent body which is 5 times of the total amount of the rare earth Y, then adding lamellar nano-particles which account for 60% of the total amount of the rare earth Y, sending the mixture into a reaction tank, stirring the mixture at the rotating speed of 500r/min for 30min at the stirring temperature of 125 ℃, centrifuging and washing the mixture, and drying the mixture for 20h at constant temperature in a drying box at the temperature of 75 ℃ to obtain the toughness modifier.
The medium solvent body of the embodiment is formed by mixing a dimethylformamide solution and an ionic liquid according to the weight ratio of 1: 3.
The ionic liquid of this example was 1-butyl-3-methylimidazolium tetrafluoroborate.
The preparation method of the lamellar nanoparticles of the embodiment comprises the following steps: and (2) sending the bentonite into high-temperature active liquid for ultrasonic dispersion for 20min, wherein the ultrasonic power is 600W, then sending the bentonite into nitric acid for stripping, the stripping temperature is 75 ℃, the stripping time is 30min, and finally washing the bentonite for 3 times by using boiling water.
The preparation method of the high-temperature active liquid in the embodiment comprises the following steps: heating epoxidized soybean oil to 400 deg.C, preheating for 20min, heating to 800 deg.C, and maintaining the temperature, adding sodium sulfamate 20% of the epoxidized soybean oil, stirring for 20min at 230 r/min.
The method for preparing the HDMI high-definition data line comprises the following steps:
the method comprises the following steps: adding Mn, Ni, Si, Sn and copper into a smelting furnace under the protection of nitrogen for smelting, wherein the smelting temperature is 900 ℃, and the smelting time is 35 min;
step two: then adding a dispersing agent and a toughness modifier, heating the smelting temperature to 1100 ℃, and smelting for 25min to obtain a smelting body;
step three: annealing the smelting body to 450 ℃, and carrying out annealing and heat preservation for 30 min; finally, cooling to room temperature, and then carrying out toughness fatigue treatment to obtain a tough body;
step four: and heating the tough body to 400 ℃, then carrying out wire drawing forming treatment, wherein the forming temperature is 260 ℃, and finally cooling to room temperature to obtain the high-definition data wire.
In the embodiment, the toughness fatigue treatment is carried out by cold rolling for 8min by a cold roll at-5 ℃, then cold rolling for 10min by a hot roll at 150 ℃ and repeatedly treating for 3 times.
Example 3.
The HDMI high-definition data line comprises the following raw materials in percentage by weight:
0.4% of Mn, 0.3% of Ni, 0.25% of Si, 1.35% of Sns, 7.5% of a dispersing agent, 3% of a toughness modifier and the balance of copper;
the preparation method of the dispersing agent comprises the following steps:
s1: preparing a nano medium: adding 35 parts of bismuth nitrate, 7.5 parts of sodium molybdate dihydrate and 5 parts of hexadecyl trimethyl ammonium chloride into 40 parts of deionized water to obtain a solution, adding nitric acid to adjust ph to 4.5, and then transferring the raw materials into a reaction kettle together at the reaction temperature of 130 ℃ to obtain a nano medium liquid;
s2: preparation of dispersed particles: mixing silicon dioxide and an activating solution according to a weight ratio of 1:5 to prepare a silicon dioxide dispersion solution, then sending the silicon dioxide dispersion solution into 25 parts of titanium dioxide powder, firstly adopting proton irradiation, wherein the irradiation power is 450W, the irradiation time is 25min, then sending the silicon dioxide dispersion solution into a grinding machine for fully grinding, wherein the grinding rotating speed is 1250r/min, and the grinding time is 15min to obtain dispersed particles;
s3: preparation of a dispersing agent: and (3) feeding the nano medium liquid and the dispersion particles into a magnetization tank for magnetization reaction, wherein the magnetization intensity is 15BT, the magnetization time is 20min, and finally carrying out hot-pressing calcination, wherein the hot-pressing calcination temperature is 500 ℃, and the calcination time is 25min, so as to obtain the dispersing agent.
The specific preparation method of the activating solution in the preparation of the dispersing agent in the embodiment comprises the following steps: adding phosphoric acid and sodium chloride into a rare earth lanthanum chloride solution according to the weight ratio of 3:1, and then stirring at a constant speed of 125r/min for 20min to obtain a silicon dioxide dispersion liquid.
The preparation method of the toughness modifier in the embodiment is as follows: sending rare earth Y into a plasma box for irradiation treatment, wherein the irradiation power is 300W, the irradiation time is 20min, then adding the rare earth Y into a medium solvent body with the amount 4 times of the total amount, then adding lamellar nano-particles with the total amount being 55% of the rare earth Y, sending the mixture into a reaction tank, stirring the mixture at the rotating speed of 300r/min for 25min at the stirring temperature of 120 ℃, then centrifuging, washing, and drying the mixture in a drying box at the temperature of 70 ℃ for 16h at constant temperature to obtain the toughness modifier.
The medium solvent body of the embodiment is formed by mixing a dimethylformamide solution and an ionic liquid according to the weight ratio of 1: 3.
The ionic liquid of this example was 1-butyl-3-methylimidazolium tetrafluoroborate.
The preparation method of the lamellar nanoparticles of the embodiment comprises the following steps: and (2) sending the bentonite into high-temperature active liquid for ultrasonic dispersion for 15min, wherein the ultrasonic power is 350W, then sending the bentonite into nitric acid for stripping, the stripping temperature is 60 ℃, the stripping time is 20min, and finally washing the bentonite for 2 times by using boiling water.
The preparation method of the high-temperature active liquid in the embodiment comprises the following steps: heating epoxidized soybean oil to 350 deg.C, preheating for 15min, heating to 700 deg.C, and maintaining the temperature, adding sodium sulfamate 15% of the epoxidized soybean oil, stirring for 15min at 220 r/min.
The method for preparing the HDMI high-definition data line comprises the following steps:
the method comprises the following steps: adding Mn, Ni, Si, Sn and copper into a smelting furnace under the protection of nitrogen for smelting, wherein the smelting temperature is 850 ℃, and the smelting time is 30 min;
step two: then adding a dispersing agent and a toughness modifier, heating the smelting temperature to 1000 ℃, and smelting for 20min to obtain a smelted body;
step three: annealing the smelting body to 400 ℃, and carrying out annealing and heat preservation for 25 min; finally, cooling to room temperature, and then carrying out toughness fatigue treatment to obtain a tough body;
step four: and heating the tough body to 350 ℃, then carrying out wire drawing forming treatment, wherein the forming temperature is 235 ℃, and finally cooling to room temperature to obtain the high-definition data wire.
In the embodiment, the toughness fatigue treatment is carried out by cold rolling for 5min by a cold roll at-5 ℃, then cold rolling for 7.5min by a hot roll at 125 ℃ and repeatedly treating for 2 times.
Comparative example 1.
The material and preparation process were substantially the same as those of example 3, except that no toughening agent was added.
Comparative example 2.
The material and fabrication process were substantially the same as those of example 3, except that the ductile fatigue treatment was not used.
Comparative example 3.
The materials and preparation process were substantially the same as those of example 3, except that no dispersing agent was added.
The products of examples 1-3 and comparative examples 1-3 were tested for their performance as follows:
| electrical conductivity (%) | Tenacity strength (MP) | |
| Example 1 | 81.7 | 136.7 |
| Example 2 | 81.5 | 135.9 |
| Example 3 | 82.2 | 137.2 |
| Comparative example 1 | 72.1 | 87.1 |
| Comparative example 2 | 77.41 | 105.1 |
| Comparative example 3 | 63.4 | 78.3 |
As can be seen from examples 1-3 and comparative examples 1-3, the addition of the dispersing promoter has significant improvement on toughness, strength and conductivity, and can achieve synergistic effect on the toughness, strength and conductivity.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. The HDMI high-definition data line is characterized by comprising the following raw materials in percentage by weight:
0.2-0.6% of Mn, 0.2-0.4% of Ni, 0.1-0.4% of Si, 1.2-1.5% of Sns, 5-10% of a dispersing agent, 1-5% of a toughness modifier and the balance of copper;
the preparation method of the dispersing agent comprises the following steps:
s1: preparing a nano medium: adding 30-40 parts of bismuth nitrate, 5-10 parts of sodium molybdate dihydrate and 2-8 parts of hexadecyl trimethyl ammonium chloride into 35-45 parts of deionized water solution, adding nitric acid to adjust ph to 4.0-5.0, then transferring the raw materials into a reaction kettle together, and obtaining nano medium liquid at the reaction temperature of 125-;
s2: preparation of dispersed particles: mixing silicon dioxide and an activating solution according to a weight ratio of 1:5 to prepare a silicon dioxide dispersion solution, then sending the silicon dioxide dispersion solution into 20-30 parts of titanium dioxide powder, firstly adopting proton irradiation with the irradiation power of 300-1500W and the irradiation time of 20-30min, then sending into a grinding machine for fully grinding at the grinding speed of 1000-1500r/min and the grinding time of 10-20min to obtain dispersed particles;
s3: preparation of a dispersing agent: and (3) conveying the nano medium liquid and the dispersion particles into a magnetization tank for magnetization reaction, wherein the magnetization intensity is 10-20BT, the magnetization time is 15-25min, and finally carrying out hot-pressing calcination, wherein the hot-pressing calcination temperature is 450-550 ℃, and the calcination time is 20-30min, so as to obtain the dispersing promoter.
2. The HDMI high definition data line according to claim 1, comprising the following raw materials by weight:
0.4% of Mn, 0.3% of Ni, 0.25% of Si, 1.35% of Sns, 7.5% of a dispersing agent, 3% of a toughness modifier and the balance of copper.
3. The HDMI high definition data line according to claim 1, wherein the specific preparation method of the activation solution in the preparation of the promoting agent is as follows: adding phosphoric acid and sodium chloride into the rare earth lanthanum chloride solution according to the weight ratio of 3:1, and then stirring at a constant speed of 100-150r/min for 15-25min to obtain the silicon dioxide dispersion.
4. The HDMI high definition data line according to claim 1, wherein the preparation method of the toughness modifier comprises: the method comprises the steps of firstly sending rare earth Y into a plasma box for irradiation treatment, wherein the irradiation power is 100-500W, the irradiation time is 15-25min, then adding the rare earth Y into a medium solvent body which is 3-5 times of the total amount of the rare earth Y, then adding lamellar nano-particles which are 50-60% of the total amount of the rare earth Y, sending the mixture into a reaction tank, stirring the mixture at the pressure of 2-10Mpa and the rotating speed of 100-500r/min for 20-30min, stirring the mixture at the temperature of 115-125 ℃, then centrifuging and washing, and drying the mixture in a drying box at the temperature of 65-75 ℃ for 12-20h at constant temperature to obtain the toughness modifier.
5. The HDMI high definition data line according to claim 4, wherein the medium solvent body is formed by mixing a dimethylformamide solution and an ionic liquid according to a weight ratio of 1: 3.
6. The HDMI high definition data line according to claim 5, wherein the ionic liquid is 1-butyl-3-methylimidazolium tetrafluoroborate.
7. The HDMI high definition data line according to claim 4, wherein the preparation method of the lamellar nanoparticle comprises: and (2) sending the bentonite into high-temperature active liquid for ultrasonic dispersion for 10-20min, wherein the ultrasonic power is 100-600W, then sending the bentonite into nitric acid for stripping, the stripping temperature is 55-75 ℃, the stripping time is 10-30min, and finally washing the bentonite for 1-3 times by using boiling water.
8. The HDMI high definition data line according to claim 7, wherein the preparation method of the high temperature active liquid comprises: heating the epoxidized soybean oil to 400 ℃ of 300-.
9. A method for preparing the HDMI high definition data line according to any one of claims 1 to 9, comprising the steps of:
the method comprises the following steps: adding Mn, Ni, Si, Sn and copper into a smelting furnace under the protection of nitrogen for smelting, wherein the smelting temperature is 800-900 ℃, and the smelting time is 25-35 min;
step two: then adding a dispersing agent and a toughness modifier, raising the smelting temperature to 900-;
step three: annealing the smelting body to 350-450 ℃, and carrying out annealing and heat preservation for 20-30 min; finally, cooling to room temperature, and then carrying out toughness fatigue treatment to obtain a tough body;
step four: and heating the tough body to 400 ℃ at 300-.
10. The method for preparing HDMI high definition data line according to claim 9, wherein the toughness fatigue treatment is performed by cold rolling with a cold roll at-5 ℃ for 2-8min, then cold rolling with a hot roll at 100-150 ℃ for 5-10min, and repeating the treatment for 1-3 times.
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| JP2010150669A (en) * | 2010-03-15 | 2010-07-08 | Furukawa Electric Co Ltd:The | Copper alloy material for electrical and electronic device, and method for producing the same |
| CN107400796A (en) * | 2017-06-22 | 2017-11-28 | 安徽晋源铜业有限公司 | A kind of high-temperature-resistant high is without beryllium copper wire and preparation method thereof |
| CN109326379A (en) * | 2017-08-01 | 2019-02-12 | 深圳市绿联科技有限公司 | A kind of novel HMDI line |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010150669A (en) * | 2010-03-15 | 2010-07-08 | Furukawa Electric Co Ltd:The | Copper alloy material for electrical and electronic device, and method for producing the same |
| CN107400796A (en) * | 2017-06-22 | 2017-11-28 | 安徽晋源铜业有限公司 | A kind of high-temperature-resistant high is without beryllium copper wire and preparation method thereof |
| CN109326379A (en) * | 2017-08-01 | 2019-02-12 | 深圳市绿联科技有限公司 | A kind of novel HMDI line |
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