CN112164417A - Performance detection method and system of memory chip - Google Patents

Performance detection method and system of memory chip Download PDF

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Publication number
CN112164417A
CN112164417A CN202011077380.0A CN202011077380A CN112164417A CN 112164417 A CN112164417 A CN 112164417A CN 202011077380 A CN202011077380 A CN 202011077380A CN 112164417 A CN112164417 A CN 112164417A
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Prior art keywords
storage
performance
memory chip
gas
chip
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Inventor
吴佳
李礼
苗诗君
邢培栋
张旗
余云
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Shanghai V&g Information Technology Co ltd
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Shanghai V&g Information Technology Co ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56008—Error analysis, representation of errors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Abstract

The invention provides a performance detection method and a system of a memory chip, wherein the method comprises the following steps: step S1: acquiring identification information of a storage chip; step S2: determining a detection scheme based on the identification information; step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report; wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time. The performance detection method of the memory chip adopts a specific detection scheme according to the identification information of the memory chip, and realizes the omnibearing performance detection.

Description

Performance detection method and system of memory chip
Technical Field
The invention relates to the technical field of memory chip detection, in particular to a performance detection method and system of a memory chip.
Background
Currently, memory chip technology is mainly focused on applications of enterprise-level storage systems, providing high-quality support for access performance, storage protocols, management platforms, storage media, and a variety of applications. With the rapid growth of data and the increasing importance of data to business, the data storage market rapidly evolves. From DAS, NAS, SAN to virtual data centers, cloud computing, there is no great challenge to traditional storage design capabilities. In order to realize the reasonable use of the memory chip, a detection method for comprehensively detecting the performance of the memory chip is needed to comprehensively grasp the performance of the memory chip.
Disclosure of Invention
One of the objectives of the present invention is to provide a method for detecting the performance of a memory chip, which uses a specific detection scheme according to the identification information of the memory chip to achieve omnidirectional performance detection.
The performance detection method for the memory chip provided by the embodiment of the invention comprises the following steps:
step S1: acquiring identification information of a storage chip;
step S2: determining a detection scheme based on the identification information;
step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
Preferably, step S2: determining a detection scheme based on the identification information; the method comprises the following steps:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to a memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of data input to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the write-in frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of based on the data capacity released to a storage medium connected with a storage chip after the storage chip is fully stored for one time, and determining the capacity performance of the storage chip based on the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to a storage chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium connected with a storage device in a new flat mode, determining the actually-measured response time of the storage chip based on the phase difference between the first frequency curve and the second frequency curve, and detecting the response performance of the storage chip based on the ratio of the actually-measured response time to the response time in identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a pressurization test scheme comparison table based on the material and/or model to determine a pressurization test scheme; the pressurized test protocol included: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the steps of detecting the voltage resistance of the memory chip based on a pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a vibration test scheme comparison table based on the material and/or model to determine a vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the steps of detecting the anti-seismic performance of the memory chip based on a vibration test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and an environment simulation test scheme comparison table based on the material and/or model to determine an environment test scheme; the environment test scheme comprises the following steps: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on an environmental test scheme.
Preferably, step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report; the method comprises the following steps:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the writing frequency to serve as a storage performance report item of the storage chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in a performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; associating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time to be used as a first pressure resistance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; the storage speed is associated with the vibration time, the vibration frequency and the vibration amplitude to be used as a first vibration resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; the storage speed is correlated with the test time, the temperature value and the temperature cycle number to be used as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
Preferably, the method for detecting the performance of the memory chip further includes:
step S4: establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired data into the detection model, and determining the probability value of the abnormal storage chip.
Preferably, step S4: establishing a detection model based on the performance detection report; the method comprises the following steps of collecting the storage speed when the storage chip operates, the temperature when the storage chip operates, the response time, the residual capacity, the voltage, the current and the internal resistance in real time, substituting the storage speed, the temperature when the storage chip operates, the response time, the residual capacity, the voltage, the current and the internal resistance into a detection model, and determining the probability value of the occurrence of the:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result on the basis of abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in the judgment condition database, wherein the judgment condition matrix is as follows:
Figure 100002_DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
Figure 613360DEST_PATH_IMAGE002
is as follows
Figure 100002_DEST_PATH_IMAGE003
The first of the judgment conditions
Figure 975071DEST_PATH_IMAGE004
A parameter value;
and constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure 100002_DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 483413DEST_PATH_IMAGE006
is as follows
Figure 771437DEST_PATH_IMAGE003
A judgment result corresponding to each judgment condition;
the method comprises the following steps of collecting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of a storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure 100002_DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
Figure 582398DEST_PATH_IMAGE008
is the first of the prediction vector
Figure 618356DEST_PATH_IMAGE004
An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure 100002_DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
Figure 71334DEST_PATH_IMAGE010
is the first of the prediction vector and the judgment condition
Figure 100002_DEST_PATH_IMAGE011
Judging the similarity of the conditions;
Figure 322187DEST_PATH_IMAGE012
is the first of the prediction vector
Figure 100002_DEST_PATH_IMAGE013
A value of an element;
Figure 786273DEST_PATH_IMAGE014
is as follows
Figure 856997DEST_PATH_IMAGE011
Judgment of the conditions
Figure 175983DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting a judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
The invention also provides a performance detection system of the memory chip, which comprises:
the identification acquisition module is used for acquiring the identification information of the storage chip;
a detection scheme determination module for determining a detection scheme based on the identification information;
the performance detection report output module is used for carrying out performance detection on the memory chip based on the detection scheme and outputting a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
Preferably, the detection scheme determination module performs the following operations:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to a memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of data input to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the write-in frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of based on the data capacity released to a storage medium connected with a storage chip after the storage chip is fully stored for one time, and determining the capacity performance of the storage chip based on the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to a storage chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium connected with a storage device in a new flat mode, determining the actually-measured response time of the storage chip based on the phase difference between the first frequency curve and the second frequency curve, and detecting the response performance of the storage chip based on the ratio of the actually-measured response time to the response time in identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a pressurization test scheme comparison table based on the material and/or model to determine a pressurization test scheme; the pressurized test protocol included: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the steps of detecting the voltage resistance of the memory chip based on a pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a vibration test scheme comparison table based on the material and/or model to determine a vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the steps of detecting the anti-seismic performance of the memory chip based on a vibration test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and an environment simulation test scheme comparison table based on the material and/or model to determine an environment test scheme; the environment test scheme comprises the following steps: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on an environmental test scheme.
Preferably, the performance detection report output module performs the following operations:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the writing frequency to serve as a storage performance report item of the storage chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in a performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; associating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time to be used as a first pressure resistance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; the storage speed is associated with the vibration time, the vibration frequency and the vibration amplitude to be used as a first vibration resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; the storage speed is correlated with the test time, the temperature value and the temperature cycle number to be used as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
Preferably, the performance detection system of the memory chip further includes:
the real-time monitoring module is used for establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired data into the detection model, and determining the probability value of the abnormal storage chip.
Preferably, the real-time monitoring module performs the following operations:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result on the basis of abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in the judgment condition database, wherein the judgment condition matrix is as follows:
Figure 156709DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
Figure 168527DEST_PATH_IMAGE002
is as follows
Figure 992127DEST_PATH_IMAGE003
The first of the judgment conditions
Figure 583645DEST_PATH_IMAGE004
A parameter value;
and constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure 933724DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 850864DEST_PATH_IMAGE006
is as follows
Figure 896180DEST_PATH_IMAGE003
A judgment result corresponding to each judgment condition;
the method comprises the following steps of collecting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of a storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure 556969DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
Figure 777866DEST_PATH_IMAGE008
is the first of the prediction vector
Figure 865908DEST_PATH_IMAGE004
An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure 398520DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
Figure 754677DEST_PATH_IMAGE010
is the first of the prediction vector and the judgment condition
Figure 689135DEST_PATH_IMAGE011
Judging the similarity of the conditions;
Figure 948078DEST_PATH_IMAGE012
is the first of the prediction vector
Figure 108932DEST_PATH_IMAGE013
A value of an element;
Figure 377103DEST_PATH_IMAGE014
is as follows
Figure 556280DEST_PATH_IMAGE011
Judgment of the conditions
Figure 986124DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting a judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic diagram of a performance detection method of a memory chip according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
An embodiment of the present invention provides a method for detecting performance of a memory chip, as shown in fig. 1, including:
step S1: acquiring identification information of a storage chip;
step S2: determining a detection scheme based on the identification information;
step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
The working principle and the beneficial effects of the scheme are as follows:
acquiring identification information of the memory chip before detection, wherein the identification information comprises: material, model, capacity, storage speed, working temperature, response time and the like; the identification information is an object needing performance detection, a detection scheme stored in advance is called according to the object for detection, and a performance detection report supported by a template in advance is output according to a detection result.
The performance detection method of the memory chip adopts a specific detection scheme according to the identification information of the memory chip, and realizes the omnibearing performance detection.
In one real-time example, step S2: determining a detection scheme based on the identification information; the method comprises the following steps:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to a memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of data input to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the write-in frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of based on the data capacity released to a storage medium connected with a storage chip after the storage chip is fully stored for one time, and determining the capacity performance of the storage chip based on the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to a storage chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium connected with a storage device in a new flat mode, determining the actually-measured response time of the storage chip based on the phase difference between the first frequency curve and the second frequency curve, and detecting the response performance of the storage chip based on the ratio of the actually-measured response time to the response time in identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a pressurization test scheme comparison table based on the material and/or model to determine a pressurization test scheme; the pressurized test protocol included: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the steps of detecting the voltage resistance of the memory chip based on a pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a vibration test scheme comparison table based on the material and/or model to determine a vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the steps of detecting the anti-seismic performance of the memory chip based on a vibration test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and an environment simulation test scheme comparison table based on the material and/or model to determine an environment test scheme; the environment test scheme comprises the following steps: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on an environmental test scheme.
The working principle and the beneficial effects of the technical scheme are as follows:
the detection method mainly comprises the following steps: recording the heating condition of the memory chip under full-load operation by using a temperature curve detected by a sensor attached to the surface of the memory chip; secondly, detecting the storage performance according to the difference between the receiving frequency and the output frequency of the storage chip; thirdly, detecting capacity performance according to the difference between the data capacity in the mark and the actual data capacity; fourthly, detecting response performance according to the difference between the response time in the mark and the actually measured response time; fifthly, testing the pressure resistance through a pressurization test scheme; sixthly, testing the anti-seismic performance through the anti-seismic test; seventhly, carrying out an environment tolerance performance test through an environment simulation test, and carrying out service life evaluation; the memory chip is comprehensively evaluated from the aspects of structure and use from seven aspects; providing a data verification basis for use by a user.
In one embodiment, step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report; the method comprises the following steps:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the writing frequency to serve as a storage performance report item of the storage chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in a performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; associating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time to be used as a first pressure resistance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; the storage speed is associated with the vibration time, the vibration frequency and the vibration amplitude to be used as a first vibration resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; the storage speed is correlated with the test time, the temperature value and the temperature cycle number to be used as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
The working principle and the beneficial effects of the technical scheme are as follows:
the performance detection report includes: a heat dissipation report item, a storage performance report item, a capacity performance report item, a response performance report item, a first compressive performance report item, a second compressive performance report item, a first anti-seismic performance report item, a second anti-seismic performance report item, a first environmental tolerance performance report item and a second environmental tolerance performance report item; recording the comprehensive evaluation of the memory chip from the aspects of structure and use based on a plurality of report items of the performance detection report; providing a data verification basis for use by a user.
In one embodiment, the method for detecting the performance of the memory chip further includes:
step S4: establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired data into the detection model, and determining the probability value of the abnormal storage chip.
The working principle and the beneficial effects of the technical scheme are as follows:
a model is established through a large amount of data generated during detection, and the model is used for predicting the abnormity of the memory chip during actual use, so that a user can find the abnormal memory chip in time, take counter measures in time, and reduce the indirection loss caused by the abnormity of the memory chip.
Preferably, step S4: establishing a detection model based on the performance detection report; the method comprises the following steps of collecting the storage speed when the storage chip operates, the temperature when the storage chip operates, the response time, the residual capacity, the voltage, the current and the internal resistance in real time, substituting the storage speed, the temperature when the storage chip operates, the response time, the residual capacity, the voltage, the current and the internal resistance into a detection model, and determining the probability value of the occurrence of the:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result on the basis of abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in the judgment condition database, wherein the judgment condition matrix is as follows:
Figure 493329DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
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is as follows
Figure 84027DEST_PATH_IMAGE003
The first of the judgment conditions
Figure 950352DEST_PATH_IMAGE004
A parameter value;
and constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure 679274DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 912416DEST_PATH_IMAGE006
is as follows
Figure 410393DEST_PATH_IMAGE003
A judgment result corresponding to each judgment condition;
the method comprises the following steps of collecting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of a storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure 447619DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
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is the first of the prediction vector
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An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure 570930DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
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is the first of the prediction vector and the judgment condition
Figure 872784DEST_PATH_IMAGE011
Judging the similarity of the conditions;
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is the first of the prediction vector
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A value of an element;
Figure 551525DEST_PATH_IMAGE014
is as follows
Figure 742334DEST_PATH_IMAGE011
Judgment of the conditions
Figure 232222DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting a judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
The working principle and the beneficial effects of the technical scheme are as follows:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, and establishing a judgment result database for a judgment result based on abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance; the judgment condition database and the judgment result database form a detection model; the method is used for predicting the abnormity of the memory chip in actual use, so that a user can find the abnormal memory chip in time, take counter measures in time and reduce indirect loss of the user caused by the abnormity of the memory chip.
The invention also provides a performance detection system of the memory chip, which comprises:
the identification acquisition module is used for acquiring the identification information of the storage chip;
a detection scheme determination module for determining a detection scheme based on the identification information;
the performance detection report output module is used for carrying out performance detection on the memory chip based on the detection scheme and outputting a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
The working principle and the beneficial effects of the scheme are as follows:
acquiring identification information of the memory chip before detection, wherein the identification information comprises: material, model, capacity, storage speed, working temperature, response time and the like; the identification information is an object needing performance detection, a detection scheme stored in advance is called according to the object for detection, and a performance detection report supported by a template in advance is output according to a detection result.
The performance detection system of the memory chip adopts a specific detection scheme according to the identification information of the memory chip, thereby realizing the omnibearing performance detection.
In one embodiment, the detection scheme determination module performs the following operations:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to a memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of data input to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the write-in frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of based on the data capacity released to a storage medium connected with a storage chip after the storage chip is fully stored for one time, and determining the capacity performance of the storage chip based on the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to a storage chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium connected with a storage device in a new flat mode, determining the actually-measured response time of the storage chip based on the phase difference between the first frequency curve and the second frequency curve, and detecting the response performance of the storage chip based on the ratio of the actually-measured response time to the response time in identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a pressurization test scheme comparison table based on the material and/or model to determine a pressurization test scheme; the pressurized test protocol included: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the steps of detecting the voltage resistance of the memory chip based on a pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and a vibration test scheme comparison table based on the material and/or model to determine a vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the steps of detecting the anti-seismic performance of the memory chip based on a vibration test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset material and/or model and an environment simulation test scheme comparison table based on the material and/or model to determine an environment test scheme; the environment test scheme comprises the following steps: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on an environmental test scheme.
The working principle and the beneficial effects of the technical scheme are as follows:
the detection method mainly comprises the following steps: recording the heating condition of the memory chip under full-load operation by using a temperature curve detected by a sensor attached to the surface of the memory chip; secondly, detecting the storage performance according to the difference between the receiving frequency and the output frequency of the storage chip; thirdly, detecting capacity performance according to the difference between the data capacity in the mark and the actual data capacity; fourthly, detecting response performance according to the difference between the response time in the mark and the actually measured response time; fifthly, testing the pressure resistance through a pressurization test scheme; sixthly, testing the anti-seismic performance through the anti-seismic test; seventhly, carrying out an environment tolerance performance test through an environment simulation test, and carrying out service life evaluation; the memory chip is comprehensively evaluated from the aspects of structure and use from seven aspects; providing a data verification basis for use by a user.
In one embodiment, the performance detection report output module performs the following operations:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the writing frequency to serve as a storage performance report item of the storage chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in a performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; associating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time to be used as a first pressure resistance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; the storage speed is associated with the vibration time, the vibration frequency and the vibration amplitude to be used as a first vibration resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; the storage speed is correlated with the test time, the temperature value and the temperature cycle number to be used as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
The working principle and the beneficial effects of the technical scheme are as follows:
the performance detection report includes: a heat dissipation report item, a storage performance report item, a capacity performance report item, a response performance report item, a first compressive performance report item, a second compressive performance report item, a first anti-seismic performance report item, a second anti-seismic performance report item, a first environmental tolerance performance report item and a second environmental tolerance performance report item; recording the comprehensive evaluation of the memory chip from the aspects of structure and use based on a plurality of report items of the performance detection report; providing a data verification basis for use by a user.
In one embodiment, the performance detection system of the memory chip further comprises:
the real-time monitoring module is used for establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired data into the detection model, and determining the probability value of the abnormal storage chip.
The working principle and the beneficial effects of the technical scheme are as follows:
a model is established through a large amount of data generated during detection, and the model is used for predicting the abnormity of the memory chip during actual use, so that a user can find the abnormal memory chip in time, take counter measures in time, and reduce the indirection loss caused by the abnormity of the memory chip.
In one embodiment, the real-time monitoring module performs the following operations:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result on the basis of abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in the judgment condition database, wherein the judgment condition matrix is as follows:
Figure 824877DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
Figure 735326DEST_PATH_IMAGE002
is as follows
Figure 679012DEST_PATH_IMAGE003
The first of the judgment conditions
Figure 113535DEST_PATH_IMAGE004
A parameter value;
and constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure 295118DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 281528DEST_PATH_IMAGE006
is as follows
Figure 181351DEST_PATH_IMAGE003
A judgment result corresponding to each judgment condition;
the method comprises the following steps of collecting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of a storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure 137675DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
Figure 704922DEST_PATH_IMAGE008
is the first of the prediction vector
Figure 596655DEST_PATH_IMAGE004
An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure 983774DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
Figure 494521DEST_PATH_IMAGE010
is the first of the prediction vector and the judgment condition
Figure 916275DEST_PATH_IMAGE011
Judging the similarity of the conditions;
Figure 978909DEST_PATH_IMAGE012
is the first of the prediction vector
Figure 853324DEST_PATH_IMAGE013
A value of an element;
Figure 661704DEST_PATH_IMAGE014
is as follows
Figure 937965DEST_PATH_IMAGE011
Judgment of the conditions
Figure 171500DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting a judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
The working principle and the beneficial effects of the technical scheme are as follows:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, and establishing a judgment result database for a judgment result based on abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance; the judgment condition database and the judgment result database form a detection model; the method is used for predicting the abnormity of the memory chip in actual use, so that a user can find the abnormal memory chip in time, take counter measures in time and reduce indirect loss of the user caused by the abnormity of the memory chip.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A performance detection method of a memory chip is characterized by comprising the following steps:
step S1: acquiring identification information of the memory chip;
step S2: determining a detection scheme based on the identification information;
step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
2. The method for detecting the performance of the memory chip according to claim 1, wherein the step S2: determining a detection scheme based on the identification information; the method comprises the following steps:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to the memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of the input data to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at the detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the writing frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of determining the capacity performance of the memory chip based on the data capacity released into a storage medium connected with the memory chip after the memory chip is fully stored for one time and the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to the memory chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium which is connected with the storage newly and flatly, determining a measured response time of the memory chip based on a phase difference of the first frequency curve and the second frequency curve, and detecting the response performance of the memory chip based on a ratio of the measured response time to the response time in the identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and a pressurization test scheme based on the material and/or the model to determine the pressurization test scheme; the compression test protocol comprises: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the step of detecting the voltage withstanding performance of the memory chip based on the pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and a vibration test scheme based on the material and/or the model to determine the vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the step of detecting the anti-seismic performance of the memory chip based on the shock test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and an environment simulation test scheme based on the material and/or the model to determine an environment test scheme; the environment test scheme comprises: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on the environmental test scheme.
3. The method for detecting the performance of the memory chip according to claim 2, wherein the step S3: performing performance detection on the memory chip based on the detection scheme, and outputting a performance detection report; the method comprises the following steps:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the write frequency as a storage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; correlating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time as a first pressure resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip is subjected to the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; correlating the storage speed with the vibration time, the vibration frequency and the vibration amplitude to serve as a first anti-vibration performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; associating the storage speed with the test time, the temperature value and the temperature cycle number to serve as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
4. The method for detecting the performance of the memory chip according to claim 1, further comprising:
step S4: establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired values into the detection model, and determining the probability value of the storage chip with abnormality.
5. The method for detecting the performance of the memory chip as claimed in claim 4, wherein said step S4: establishing a detection model based on the performance detection report; the method comprises the following steps of collecting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance into the detection model, and determining the probability value of the storage chip with abnormality, wherein the probability value comprises the following steps:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result based on abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in a judgment condition database, wherein the judgment condition matrix is as follows:
Figure DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
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is as follows
Figure DEST_PATH_IMAGE003
A first of the judgment conditions
Figure 487354DEST_PATH_IMAGE004
A parameter value;
constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 40957DEST_PATH_IMAGE006
is as follows
Figure 445393DEST_PATH_IMAGE003
Judging results corresponding to the judging conditions;
acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
Figure 700925DEST_PATH_IMAGE008
is the first of the prediction vector
Figure 872013DEST_PATH_IMAGE004
An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
Figure 388445DEST_PATH_IMAGE010
is the first of the prediction vector and the judgment condition
Figure DEST_PATH_IMAGE011
Determining the similarity of the judgment conditions;
Figure 370307DEST_PATH_IMAGE012
is the first of the prediction vector
Figure DEST_PATH_IMAGE013
A value of an element;
Figure 860938DEST_PATH_IMAGE014
is as follows
Figure 179924DEST_PATH_IMAGE011
(ii) a judgment condition
Figure 426228DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting the judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
6. A performance detection system for a memory chip, comprising:
the identification acquisition module is used for acquiring the identification information of the memory chip;
a detection scheme determination module for determining a detection scheme based on the identification information;
a performance detection report output module, configured to perform performance detection on the memory chip based on the detection scheme, and output a performance detection report;
wherein the identification information includes: one or more of material, model, capacity, storage speed, working temperature and response time.
7. The performance testing system of a memory chip of claim 6, wherein said testing scheme determination module performs the following operations:
analyzing the identification information to obtain the storage speed of the storage chip;
the detection scheme comprises the steps of inputting data to the memory chip at the maximum storage speed of the memory chip, and detecting a temperature curve of the memory chip through a temperature sensor attached to the surface of the memory chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the storage speed of the storage chip;
determining the storage frequency of the storage chip based on the storage speed;
determining a plurality of detection frequencies of the input data to the memory chip based on the storage frequency;
the detection scheme comprises the steps of inputting data to the memory chips at the detection frequencies respectively, and detecting the temperature curves of the memory chips through temperature sensors attached to the surfaces of the memory chips; detecting the storage performance of the storage chip by determining the writing frequency of a storage medium connected with the storage chip;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the capacity of the storage chip;
the detection scheme comprises the steps of determining the capacity performance of the memory chip based on the data capacity released into a storage medium connected with the memory chip after the memory chip is fully stored for one time and the ratio of the data capacity to the capacity;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the response time of the memory chip;
based on the response time, inquiring a comparison table of preset response time and a first frequency curve to determine a first frequency curve function;
the detection scheme comprises the steps of inputting data to the memory chip at an input frequency determined by a first frequency curve function, determining a second frequency curve of a writing frequency of a storage medium which is connected with the storage newly and flatly, determining a measured response time of the memory chip based on a phase difference of the first frequency curve and the second frequency curve, and detecting the response performance of the memory chip based on a ratio of the measured response time to the response time in the identification information;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and a pressurization test scheme based on the material and/or the model to determine the pressurization test scheme; the compression test protocol comprises: one or more combinations of pressing time, pressing pressure and pressing temperature;
the detection scheme comprises the step of detecting the voltage withstanding performance of the memory chip based on the pressurization test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and a vibration test scheme based on the material and/or the model to determine the vibration test scheme; the shock test scheme includes: one or more combinations of vibration time, vibration frequency and vibration amplitude;
the detection scheme comprises the step of detecting the anti-seismic performance of the memory chip based on the shock test scheme;
and/or the presence of a gas in the gas,
analyzing the identification information to obtain the material and/or the model of the storage chip;
inquiring a preset comparison table of the material and/or the model and an environment simulation test scheme based on the material and/or the model to determine an environment test scheme; the environment test scheme comprises: testing one or more combinations of testing time, testing temperature curve and temperature cycle times;
the detection scheme includes detecting an environmental endurance performance of the memory chip based on the environmental test scheme.
8. The performance testing system of a memory chip of claim 7, wherein said performance testing report output module performs the following operations:
analyzing the temperature curve, and determining the temperature rising slope, the maximum temperature value and the time for reaching the maximum temperature value;
taking the temperature rising slope, the maximum temperature value and the time reaching the maximum temperature value as heat dissipation report items of the performance detection report;
and/or the presence of a gas in the gas,
associating the detection frequency with the write frequency as a storage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the data capacity to the capacity as a capacity performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
taking the ratio of the measured response time to the response time in the identification information as a response performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the storage chip is pressurized; correlating the storage speed with the pressurization pressure, the pressurization temperature and the pressurization time as a first pressure resistance performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip is subjected to the pressurization test scheme as a second withstand voltage performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when vibration is applied to the storage chip; correlating the storage speed with the vibration time, the vibration frequency and the vibration amplitude to serve as a first anti-vibration performance report item of the storage chip in the performance detection report;
taking the damage rate of the memory chip after the memory chip passes through the shock test scheme as a second shock resistance performance report item of the memory chip in the performance detection report;
and/or the presence of a gas in the gas,
detecting the current storage speed of the storage chip when the environment simulation test is carried out on the storage chip; associating the storage speed with the test time, the temperature value and the temperature cycle number to serve as a first environment tolerance performance report item of the storage chip in the performance detection report;
and taking the damage rate of the memory chip after the environmental simulation test as a second environmental tolerance performance report item of the memory chip in the performance detection report.
9. The performance testing system of a memory chip of claim 6, further comprising:
the real-time monitoring module is used for establishing a detection model based on the performance detection report; and acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, substituting the acquired values into the detection model, and determining the probability value of the storage chip with abnormality.
10. The performance detection system of a memory chip of claim 9, wherein the real-time monitoring module performs the following operations:
establishing a judgment condition database according to different storage speeds, working temperature, response time, residual capacity, voltage, current and internal resistance in the performance detection report, establishing a judgment result database for a judgment result based on abnormal probability values corresponding to the different storage speeds, the working temperature, the response time, the residual capacity, the voltage, the current and the internal resistance, wherein the judgment conditions correspond to the judgment results one by one;
establishing a judgment condition matrix according to different parameter values in different judgment conditions in a judgment condition database, wherein the judgment condition matrix is as follows:
Figure 172468DEST_PATH_IMAGE001
；
wherein the content of the first and second substances,
Figure 261646DEST_PATH_IMAGE002
is as follows
Figure 508957DEST_PATH_IMAGE003
A first of the judgment conditions
Figure 734402DEST_PATH_IMAGE004
A parameter value;
constructing a judgment result matrix according to different judgment results in the judgment structure database, wherein the judgment result matrix is as follows:
Figure 58067DEST_PATH_IMAGE005
；
wherein the content of the first and second substances,
Figure 368963DEST_PATH_IMAGE006
is as follows
Figure 655850DEST_PATH_IMAGE003
Judging results corresponding to the judging conditions;
acquiring the storage speed, the temperature, the response time, the residual capacity, the voltage, the current and the internal resistance of the storage chip during operation in real time, and constructing a prediction vector, wherein the prediction vector is as follows:
Figure 1380DEST_PATH_IMAGE007
;
wherein the content of the first and second substances,
Figure 495947DEST_PATH_IMAGE008
is the first of the prediction vector
Figure 28559DEST_PATH_IMAGE004
An element;
calculating the similarity between the prediction vector and each judgment condition in the judgment condition matrix, wherein the calculation formula is as follows:
Figure 148831DEST_PATH_IMAGE009
;
wherein the content of the first and second substances,
Figure 83289DEST_PATH_IMAGE010
is the first of the prediction vector and the judgment condition
Figure 342232DEST_PATH_IMAGE011
Determining the similarity of the judgment conditions;
Figure 503086DEST_PATH_IMAGE012
is the first of the prediction vector
Figure 505677DEST_PATH_IMAGE013
A value of an element;
Figure 294641DEST_PATH_IMAGE014
is as follows
Figure 878813DEST_PATH_IMAGE011
(ii) a judgment condition
Figure 386018DEST_PATH_IMAGE013
A parameter value;
and acquiring and outputting the judgment result in the judgment matrix corresponding to the judgment condition with the maximum similarity.
CN202011077380.0A 2020-10-10 2020-10-10 Performance detection method and system of memory chip Pending CN112164417A (en)

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