CN112147847A - Alkali-soluble photoresist - Google Patents

Alkali-soluble photoresist Download PDF

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CN112147847A
CN112147847A CN202011044029.1A CN202011044029A CN112147847A CN 112147847 A CN112147847 A CN 112147847A CN 202011044029 A CN202011044029 A CN 202011044029A CN 112147847 A CN112147847 A CN 112147847A
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alkali
reaction
photoresist
film
forming resin
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邵杰
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/14—Esterification

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

The invention relates to the field of optical materials, in particular to an alkali-soluble photoresist. Commercial alkali-soluble photoresist is mainly acrylic acid modified epoxy resin, but the resin has high brittleness, line edge roughness is easily caused during development, and the adhesion of film-forming resin on a silicon wafer is small due to a large amount of oily functional groups contained in the film-forming resin. Based on the problems, Si, Zr, P and N heteroatoms are introduced into the molecular structure of the film-forming resin of the photoresist through a Si-containing polymerizable material and a polymerizable P-containing compound, and the Si, Zr, P and N heteroatoms have a synergistic effect, so that the film-forming resin obtains high refractive index and exposure latitude, the photoresist finally obtains higher resolution, and the polymerizable P-containing compound contains more rigid benzene rings and annular structures, so that the anti-etching performance of the photoresist is greatly improved, and the photoresist has good medical prospect.

Description

Alkali-soluble photoresist
Technical Field
The invention relates to the field of optical materials, in particular to an alkali-soluble photoresist.
Background
The photoresist is photosensitive mixed liquid with the solubility changed in a developing solution by the irradiation or radiation of an ultraviolet exposure light source, is a key material of an integrated circuit industrial chain, and is mainly applied to the fine pattern processing of microelectronic and semiconductor discrete devices.
The photoresist comprises film-forming resin, a photosensitizer, an auxiliary agent, a solvent and the like, wherein the film-forming resin is a key component and can generate photochemical reaction to determine the sensitivity, resolution and solubility of the photoresist.
Commercial alkali-soluble photoresists are mainly acrylic modified epoxy resins, but the resins are high in brittleness and easily cause line edge roughness during development (the synthesis and performance research [ D ] of film-forming resins for the photoresist is Lihu.) and the film-forming resins contain a large amount of oily functional groups so that the adhesion of the film-forming resins on silicon wafers is low.
The introduction of heteroatoms such as S, F into a film-forming resin of a photoresist can improve the resolution of the photoresist, but the study on the influence of two or more heteroatoms introduced into a molecular chain of the film-forming resin of the photoresist on the resolution is rarely reported at present.
Disclosure of Invention
Aiming at the problems in the prior art, the technical problems to be solved by the invention are as follows: commercial alkali-soluble photoresist is mainly acrylic acid modified epoxy resin, but the resin has high brittleness, line edge roughness is easily caused during development, and the adhesion of film-forming resin on a silicon wafer is small due to a large amount of oily functional groups contained in the film-forming resin.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention provides an alkali-soluble photoresist which comprises the following components in parts by weight:
Figure BDA0002707453170000011
Figure BDA0002707453170000021
specifically, the film-forming resin is prepared according to the following method:
(1) uniformly mixing 45mL of tert-butyl acrylate, 3g of Si-containing polymerizable material, 2g of polymerizable P-containing compound, 20mL of 2-ethylhexyl acrylate, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of chain transfer agent and 150mL of propylene glycol methyl ether acetate, setting the reaction temperature to 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping the reaction after infrared detection of disappearance of double bonds in the reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
Specifically, the Si-containing polymerizable material is prepared according to the following method:
dispersing 8g of nano silicon dioxide and 4g of nano zirconium oxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature to react until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
Specifically, the polymerizable P-containing compound is prepared according to the following method:
adding 380g of DOPO-HPM and 160g of glycidyl methacrylate into a reactor, uniformly stirring, adding 0.55g of stannous octoate, uniformly stirring, heating to 130 ℃, carrying out heat preservation reaction until the hydroxyl content in the solution is equal to the mole number of the DOPO-HPM, and carrying out reduced pressure distillation to obtain a polymerizable P-containing compound, wherein the chemical structural formula of the polymerizable P-containing compound is as follows:
Figure BDA0002707453170000031
specifically, the DOPO-HPM is prepared according to the method disclosed in US6180695B1, and has the following chemical structural formula:
Figure BDA0002707453170000032
specifically, the photoinitiator is a compound of a photoinitiator 907 and a photoinitiator ITX, and the weight ratio of the photoinitiator 907 to the photoinitiator ITX is 1: 2.
Specifically, the reactive diluent is tripropylene glycol diacrylate or hydroxyethyl acrylate.
Specifically, the solvent is acetone or N, N dimethylformamide.
The invention has the beneficial effects that:
(1) according to the invention, Si and Zr heteroatoms are introduced into the molecular structure of the film-forming resin of the photoresist by the Si-containing polymerizable material, P, N heteroatoms are introduced into the molecular structure of the film-forming resin of the photoresist by the polymerizable P-containing compound, and the Si, Zr, P and N heteroatoms act synergistically, so that the film-forming resin obtains high refractive index and exposure latitude, and finally the photoresist obtains higher resolution, and the polymerizable P-containing compound contains more rigid benzene rings and cyclic structures, and is very beneficial to improving the anti-etching performance of the photoresist;
(2) the Si-containing polymerizable material prepared by the invention consists of surface-modified nano silicon dioxide and surface nano zirconium dioxide, the surface of the surface-modified nano silicon dioxide or surface nano zirconium dioxide not only contains rich hydroxyl, but also contains polymerizable double bonds, and Si and Zr heteroatoms and a large number of hydroxyl can be introduced into a film-forming resin molecular structure through chemical bonding with a film-forming resin matrix, so that the adhesive force of a photoresist on a silicon wafer can be effectively improved; the invention finds that the molecular structure of the photoresist film-forming resin with Si and Zr atoms introduced simultaneously is higher than the resolution obtained by separately introducing Si and Zr atoms into the molecular structure of the photoresist film-forming resin, so that the Si and Zr have stronger synergistic action;
(3) according to the invention, maleic anhydride is adopted to replace acrylic acid as a component for introducing carboxyl and a double bond into the film-forming resin, and compared with the condition that after acrylic maleic anhydride reacts with 2-hydroxyethyl methacrylate, one carboxyl and one double bond are introduced at the same time, the condition that the carboxyl in the film-forming resin has to be consumed while the double bond is introduced is avoided, the content of the carboxyl in the film-forming resin is effectively ensured, and the alkali solubility of an unexposed area of the film-forming resin is greatly improved.
Detailed Description
The present invention will now be described in further detail with reference to examples.
The film-forming resins used in the following examples and comparative examples of the invention were prepared as follows:
(1) uniformly mixing 45mL of tert-butyl acrylate, 3g of Si-containing polymerizable material, 2g of polymerizable P-containing compound, 20mL of 2-ethylhexyl acrylate, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of chain transfer agent and 150mL of propylene glycol methyl ether acetate, setting the reaction temperature to 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping the reaction after infrared detection of disappearance of double bonds in the reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
The Si-containing polymerizable materials used in the following examples and comparative examples of the present invention were prepared as follows:
dispersing 8g of nano silicon dioxide and 4g of nano zirconium oxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature to react until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
The polymerizable P-containing compounds used in the following examples and comparative examples of the present invention were prepared as follows:
adding 380g of DOPO-HPM and 160g of glycidyl methacrylate into a reactor, uniformly stirring, adding 0.55g of stannous octoate, uniformly stirring, heating to 130 ℃, carrying out heat preservation reaction until the hydroxyl content in the solution is equal to the molar number of the DOPO-HPM, and carrying out reduced pressure distillation to obtain a polymerizable P-containing compound;
the DOPO-HPM used in the following examples and comparative examples of the present invention was prepared according to the method disclosed in U.S. Pat. No. 4, 6180695, 1 and has the following molecular formula:
the DOPO-HPM has the following chemical structural formula:
Figure BDA0002707453170000051
the photoinitiator used in the following examples and comparative examples of the present invention was a compound of photoinitiator 907 and photoinitiator ITX, and the weight ratio of photoinitiator 907 to photoinitiator ITX was 1: 2.
The reactive diluents used in the following examples and comparative examples of the present invention were tripropylene glycol diacrylate or hydroxyethyl acrylate.
The solvents used in the following examples and comparative examples of the present invention were acetone or N, N dimethylformamide.
The nano silicon dioxide used in the following examples and comparative examples of the present invention has an average particle size of 10 to 20nm, and the nano zirconium dioxide has an average particle size of 10 to 20 nm.
Example 1
The alkali-soluble photoresist comprises the following components in parts by weight:
Figure BDA0002707453170000061
example 2
The alkali-soluble photoresist comprises the following components in parts by weight:
Figure BDA0002707453170000062
example 3
The alkali-soluble photoresist comprises the following components in parts by weight:
Figure BDA0002707453170000063
Figure BDA0002707453170000071
comparative example 1 differs from example 3 in that: the Si-containing polymerizable material was prepared according to the following method:
dispersing 12g of nano silicon dioxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature for reaction until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
Comparative example 2 differs from example 3 in that: the Si-containing polymerizable material was prepared according to the following method:
dispersing 4g of nano silicon dioxide and 8g of nano zirconium oxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature to react until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
Comparative example 3 differs from example 3 in that: the Si-containing polymerizable material was prepared according to the following method:
dispersing 10g of nano silicon dioxide and 2g of nano zirconium oxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature to react until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
Comparative example 4 differs from example 3 in that: the film-forming resin was prepared as follows:
(1) uniformly mixing 45mL of tert-butyl acrylate, 5g of Si-containing polymerizable material, 20mL of 2-ethylhexyl acrylate, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of chain transfer agent and 150mL of propylene glycol monomethyl ether acetate, setting the reaction temperature to 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping reaction after infrared detection of disappearance of double bonds in a reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
Comparative example 5 differs from example 3 in that: the film-forming resin was prepared as follows:
(1) uniformly mixing 45mL of tert-butyl acrylate, 5g of a polymerizable P-containing compound, 20mL of 2-ethylhexyl acrylate, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of a chain transfer agent and 150mL of propylene glycol monomethyl ether acetate, setting the reaction temperature to 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping the reaction after infrared detection of disappearance of double bonds in a reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
Comparative example 6 is the same as example 3 except that the film-forming resin was prepared as follows:
(1) uniformly mixing 45mL of tert-butyl acrylate, 20mL of acrylic acid-2-ethylhexyl ester, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of chain transfer agent and 150mL of propylene glycol monomethyl ether acetate, setting the reaction temperature to be 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping the reaction after infrared detection of disappearance of double bonds in a reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
The photoresists prepared in examples 1 to 3 and comparative examples 1 to 6 were mixed according to the formula amount and placed in a brown bottle, after all the photoresists were dissolved, insoluble impurities of 0.22 μm or more were removed to obtain a prepared photoresist for standby, the prepared photoresist was spin-coated on a substrate to obtain a 1 μm thick coating film, and the coating film was subjected to pre-baking (90 ℃) for 30min and exposure under a UV lamp (exposure energy of 35 mJ/cm)2) And then developing the image in a sodium carbonate solution with the mass fraction of 1% for 35s, then placing the image in deionized water for washing, and post-baking (120 ℃) for 30min to obtain a photoetching image.
The adhesion of the photoresist to the silicon wafer was tested according to GB/T9286-1998, shown in Table 1.
And (3) testing the resolution ratio: observing the line width and line type of the photoresist image by using a KH-8700 type expensive digital video microscope, and observing the resolution of the photoresist by using an S-4800 type scanning electron microscope of Hitachi, Japan;
the photoresists prepared in examples 1-3 and comparative examples 1-6 were evaluated for etch resistance under oxide etch conditions (Ar/CF 2).
The resolution, LER, etch rate of developed images of the photoresists prepared in examples 1-3 and comparative examples 1-6 are shown in Table 1:
TABLE 1
Test item Resolution (nm) LER(nm) Adhesion (grade) Etch rate
Example 1 33 5.3 0 552
Example 2 34 5.5 0 555
Example 3 33 5.2 0 547
Comparative example 1 38 5.9 0 653
Comparative example 2 37 5.8 0 656
Comparative example 3 39 6.0 0 648
Comparative example 4 40 6.3 0 752
Comparative example 5 105 11.2 2 654
Comparative example 6 121 12.4 2 788
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.

Claims (7)

1. An alkali-soluble photoresist is characterized by comprising the following components in parts by weight:
Figure FDA0002707453160000011
2. an alkali-soluble photoresist according to claim 1, wherein: the film-forming resin is prepared according to the following method:
(1) uniformly mixing 45mL of tert-butyl acrylate, 3g of Si-containing polymerizable material, 2g of polymerizable P-containing compound, 20mL of 2-ethylhexyl acrylate, 15mL of butyl methacrylate, 35mL of methyl methacrylate, 20mL of maleic anhydride, 3mL of azobisisobutyronitrile, 2.5mL of chain transfer agent and 150mL of propylene glycol methyl ether acetate, setting the reaction temperature to 90 ℃, starting a stirrer, fully reacting under the protection of nitrogen, and stopping the reaction after infrared detection of disappearance of double bonds in the reaction system to obtain a copolymer I;
(2) raising the temperature of the reaction system to 115 ℃, adding 0.2g of p-methoxyphenol, 1g of triphenylphosphine and 50mL of propylene glycol monomethyl ether acetate, uniformly mixing, dropwise adding 30mL of 2-hydroxyethyl methacrylate into the reaction system in the continuous stirring process, completing dropwise adding within 10min until the acid value of the reaction system is not changed, finishing the reaction, dissolving the reaction solution by acetone, dropwise adding into petroleum ether for precipitation, performing suction filtration, dissolving by acetone, precipitating, repeating for three times, and finally placing in a vacuum drying box at 30 ℃ for 24h to obtain the film-forming resin.
3. An alkali-soluble photoresist according to claim 2, wherein the Si-containing polymerizable material is prepared by the following method:
dispersing 8g of nano silicon dioxide and 4g of nano zirconium oxide in 200mL of toluene in sequence, adding 35g of hydroxyethyl acrylate, 0.8g of p-toluenesulfonic acid and 0.2g of hydroquinone, heating to reflux, keeping the temperature to react until no water is generated, continuing to react for 3h, stopping the reaction, vacuum-filtering, washing the product with toluene for 3 times, and vacuum-drying at 40 ℃ to obtain the Si-containing polymerizable material.
4. An alkali-soluble photoresist according to claim 2, wherein the polymerizable P-containing compound is prepared by the following method:
adding 380g of DOPO-HPM and 160g of glycidyl methacrylate into a reactor, uniformly stirring, adding 0.55g of stannous octoate, uniformly stirring, heating to 130 ℃, carrying out heat preservation reaction until the hydroxyl content in the solution is equal to the molar number of the DOPO-HPM, and carrying out reduced pressure distillation to obtain a polymerizable P-containing compound;
the DOPO-HPM has the following chemical structural formula:
Figure FDA0002707453160000021
5. the alkali-soluble photoresist of claim 1, wherein the photoinitiator is a compound of photoinitiator 907 and photoinitiator ITX, and the weight ratio of the photoinitiator 907 to the photoinitiator ITX is 1: 2.
6. An alkali-soluble photoresist according to claim 1, wherein: the reactive diluent is tripropylene glycol diacrylate or hydroxyethyl acrylate.
7. An alkali-soluble photoresist according to claim 1, wherein: the solvent is acetone or N, N-dimethylformamide.
CN202011044029.1A 2020-09-28 2020-09-28 Alkali-soluble photoresist Pending CN112147847A (en)

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Application publication date: 20201229