CN112142102B - Tantalum-doped titanium dioxide nano film and preparation method and application thereof - Google Patents
Tantalum-doped titanium dioxide nano film and preparation method and application thereof Download PDFInfo
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- CN112142102B CN112142102B CN202011014095.4A CN202011014095A CN112142102B CN 112142102 B CN112142102 B CN 112142102B CN 202011014095 A CN202011014095 A CN 202011014095A CN 112142102 B CN112142102 B CN 112142102B
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 245
- 239000004408 titanium dioxide Substances 0.000 title claims abstract description 117
- 239000002120 nanofilm Substances 0.000 title claims abstract description 87
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 61
- 239000002243 precursor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 37
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 37
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 34
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical group N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 230000001699 photocatalysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 5
- 230000001351 cycling effect Effects 0.000 abstract description 4
- 229910001460 tantalum ion Inorganic materials 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 32
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000001035 drying Methods 0.000 description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- 239000002073 nanorod Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010335 hydrothermal treatment Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000001453 impedance spectrum Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004502 linear sweep voltammetry Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
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- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
- B01J21/063—Titanium; Oxides or hydroxides thereof
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- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/20—Vanadium, niobium or tantalum
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Abstract
The invention provides a tantalum-doped titanium dioxide nano film and a preparation method and application thereof, belonging to the technical field of photoelectrocatalysis. Mixing ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water to obtain a hydrothermal reaction precursor solution, placing an FTO substrate in the hydrothermal reaction precursor solution with the conductive surface facing downwards in an inclined manner to perform hydrothermal reaction, wherein tetrabutyl titanate is subjected to hydrolysis reaction in the hydrothermal reaction process to generate oriented growth titanium dioxide, and tantalum ions are doped into the titanium dioxide to obtain a nano film precursor; and finally, annealing the nanometer film precursor to obtain the tantalum-doped titanium dioxide nanometer film. According to the invention, the tantalum source is added in the hydrothermal process, so that the conductivity of the titanium dioxide film can be improved, and the obtained nano film has good photoelectric property and cycling stability.
Description
Technical Field
The invention relates to the technical field of photoelectrocatalysis, in particular to a tantalum-doped titanium dioxide nano film and a preparation method and application thereof.
Background
At present, the photoelectrocatalysis technology is one of the new technologies which have the most application prospect in the field which is acknowledged to be capable of simultaneously solving the problems of environment and energy in the world at present. It can not only decompose water to produce hydrogen, but also synthesize ammonia by nitrogen at normal temperature and pressure, and simulate photosynthesis to synthesize CO 2 Into hydrocarbon fuel and oxygen. Therefore, the corresponding catalyst is an important component of the photoelectrocatalysis technology, and has recently become a research hotspot in the fields of energy and materials. Titanium dioxide is the most attractive semiconductor material due to its unique electronic properties, physicochemical stability, and nontoxicity, and has been widely used in photoelectrocatalysis due to its strong ability to generate photoexcited charge carriers under illumination.
However, the photoelectric conversion efficiency actually reported by titanium dioxide is far below the theoretical limit, which is generally believed to be due to its slow charge mobility that severely hampers its overall performance. In order to improve its electricityThe transport capacity of the ions and the photocatalytic activity of the titanium dioxide are improved, and people make extensive research on the modification of the ion-doped titanium dioxide. Research shows that the carrier transport capacity can be greatly improved by introducing a small amount of ion doping into titanium dioxide. Research shows that the niobium-doped titanium dioxide has a positive effect on electron injection and charge mobility, and can improve the energy conversion efficiency to 18%. However, the existing document "Niobium Doping Enhances Charge Transport in TiO 2 After 0.25% Nb incorporation in Nanolods "(ChemNanoMat 2016,2, 660.), tiO 2 The photocurrent density of the light emitting diode was 0.94mA cm -2 In comparison with undoped TiO 2 The improvement is 1.63 times. However, the effect of improving the photocurrent density is limited, and the practical use is still insufficient.
Disclosure of Invention
In view of the above, the present invention provides a tantalum-doped titanium dioxide nano-film, and a preparation method and an application thereof.
In order to achieve the purpose of the invention, the invention provides the following technical scheme:
the invention provides a preparation method of a tantalum-doped titanium dioxide nano film, which comprises the following steps:
(1) Mixing ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water to obtain a hydrothermal reaction precursor solution, wherein the molar ratio of the soluble tantalum source to the tetrabutyl titanate in the hydrothermal reaction precursor solution is 0.05-3.5: 100, the soluble tantalum source is tantalum ethoxide and/or tantalum pentachloride;
(2) Immersing an FTO substrate in the hydrothermal reaction precursor solution, carrying out hydrothermal reaction, and cooling to obtain a nano-film precursor on the conductive surface of the FTO substrate;
(3) And annealing the nanometer film precursor to obtain the tantalum-doped titanium dioxide nanometer film.
Preferably, the volume ratio of ethanol, hydrochloric acid, tetrabutyl titanate and water in the hydrothermal reaction precursor solution is (0.5-5): (20 to 40): (0.5-3): (22-35);
the mass concentration of the hydrochloric acid is 36-38%.
Preferably, in the step (2), the immersion mode of the FTO substrate is: and (3) placing the FTO substrate with the conductive surface facing downwards and obliquely immersing the FTO substrate in the hydrothermal reaction precursor solution.
Preferably, the temperature of the hydrothermal reaction is 120-180 ℃ and the time is 4-12 h.
Preferably, the temperature of the annealing treatment is 300-500 ℃, and the time is 30-120 min.
The invention provides a tantalum-doped titanium dioxide nano film prepared by the preparation method, which comprises the titanium dioxide nano film and tantalum doped in crystal lattices of the titanium dioxide, wherein the titanium dioxide is in a rutile phase; the amount of tantalum in the titanium dioxide nano film is 0.05-3.5% of the amount of titanium dioxide.
Preferably, the thickness of the tantalum-doped titanium dioxide nano film is 1.3-3.3 mu m; the particle size of the titanium dioxide in the titanium dioxide nano film is 100-500 nm.
The invention provides application of the tantalum-doped titanium dioxide nano film in the technical scheme as a photoelectric catalytic material.
The invention provides a preparation method of a tantalum-doped titanium dioxide nano film, which comprises the steps of mixing ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water to obtain a hydrothermal reaction precursor solution, immersing an FTO (fluorine-doped tin oxide) substrate in the hydrothermal reaction precursor solution to carry out hydrothermal reaction, wherein tetrabutyl titanate is subjected to hydrolysis reaction in the hydrothermal reaction process to generate oriented growth titanium dioxide, and tantalum ions are doped into titanium dioxide crystal lattices to obtain a nano film precursor; and finally, annealing the nanometer film precursor to obtain the tantalum-doped titanium dioxide nanometer film. The invention uses hydrochloric acid to provide strong acid condition for hydrothermal reaction, in strong acid environment, tetrabutyl titanate hydrolysis process is inhibited, long-Ti-O-Ti-chain is formed slowly, rutile structure formation is promoted, and Cl - Promoting hydrothermal reaction to generate rutile nano-column TiO 2 Plays a key role; the invention is realized by heating in waterIn the process, the tantalum source is added, so that the conductivity of the titanium dioxide film can be improved, and the photoelectric property of the film is greatly improved, for example, when the doping concentration is 2%, the photocurrent density is 3.26 times that of an undoped film and 2.00 times that of a niobium-doped titanium dioxide film; the tantalum-doped titanium dioxide nano film obtained by the method has stable and uniform shape and size and good cycling stability, and the photocurrent density of the tantalum-doped titanium dioxide nano film is still almost unchanged after 2000s cycling test.
Meanwhile, the method provided by the invention is simple to operate, low in cost and easy to realize industrial production.
Drawings
FIG. 1 is a scanning electron micrograph of a pure titanium dioxide nano-film;
FIG. 2 is a SEM photograph of the titanium dioxide nano-film with tantalum doping concentration of 0.5% prepared in example 1;
FIG. 3 is a SEM photograph of the titanium dioxide nano-film with tantalum doping concentration of 1% prepared in example 2;
FIG. 4 is a SEM photograph of the Titania nano-film prepared in example 3 and having a tantalum doping concentration of 2%;
FIG. 5 is an X-ray diffraction pattern of titanium dioxide nano-films with different tantalum doping concentrations;
FIG. 6 is an impedance spectrum of titanium dioxide nano-film with different tantalum doping concentrations;
FIG. 7 is a graph of photocurrent density versus voltage for titanium dioxide nanofilms with different tantalum doping concentrations;
FIG. 8 is a graph of the cycling test of titanium dioxide nano-films with different tantalum doping concentrations.
Detailed Description
The invention provides a preparation method of a tantalum-doped titanium dioxide nano film, which comprises the following steps:
(1) Mixing ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water to obtain a hydrothermal reaction precursor solution, wherein the molar ratio of the soluble tantalum source to the tetrabutyl titanate in the hydrothermal reaction precursor solution is (0.05-3.5): 100, the soluble tantalum source is tantalum ethoxide and/or tantalum pentachloride;
(2) Immersing an FTO substrate in the hydrothermal reaction precursor solution, carrying out hydrothermal reaction, and cooling to obtain a nano-film precursor on the conductive surface of the FTO substrate;
(3) And annealing the nanometer film precursor to obtain the tantalum-doped titanium dioxide nanometer film.
Unless otherwise specified, the starting materials used in the present invention are commercially available.
Ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water are mixed to obtain a hydrothermal reaction precursor solution, wherein the soluble tantalum source is tantalum ethoxide and/or tantalum pentachloride. The present invention does not require any special operation mode for the mixing, and the mixing mode known to those skilled in the art can be used, such as stirring and mixing. In the invention, the purity of the ethanol is preferably more than or equal to 99.7 percent, and more preferably more than or equal to 99.9 percent; the mass concentration of the hydrochloric acid is preferably 36-38%, and more preferably 37%; the purity of the tetrabutyl titanate is preferably more than or equal to 99 percent, and more preferably more than or equal to 99.5 percent; the purity of the tantalum ethoxide is preferably more than or equal to 99.9 percent; the water is preferably deionized water. In the present invention, the volume ratio of ethanol, hydrochloric acid, tetrabutyl titanate and water is preferably (0.5 to 5): (20 to 40): (0.5 to 3): (22 to 35), more preferably (1 to 3): (15-25): (1-2): (25 to 30). In the present invention, the molar amount of the soluble tantalum source in the hydrothermal reaction precursor solution is 0.05 to 3.5%, preferably 0.5 to 3%, and more preferably 1 to 2% of the molar amount of tetrabutyl titanate.
After the hydrothermal reaction precursor solution is obtained, the FTO substrate is immersed in the hydrothermal reaction precursor solution for hydrothermal reaction, and after cooling, a nano-film precursor is obtained on the conductive surface of the FTO substrate. The invention has no special requirement on the type of the FTO substrate, and the FTO substrate known to those skilled in the art can be used.
Before the FTO substrate is placed into the hydrothermal reaction precursor solution, the invention preferably performs pretreatment on the FTO substrate, and the pretreatment preferably comprises the following steps:
sequentially carrying out ultrasonic cleaning and drying on the FTO substrate to obtain a clean FTO substrate; the cleaning agent for ultrasonic cleaning sequentially comprises acetone, ethanol and deionized water.
In the invention, the power of the ultrasonic cleaning is preferably 100W, and the time of the acetone ultrasonic cleaning, the ethanol ultrasonic cleaning and the deionized water ultrasonic cleaning is independently preferably 15min. The present invention does not require any particular manner of drying, and the moisture can be completely removed by drying means well known to those skilled in the art.
In the present invention, the FTO substrate is preferably placed in a manner that the FTO substrate is placed with its conductive surface facing downward and is obliquely immersed in the hydrothermal reaction precursor solution. In the invention, the included angle between the FTO substrate and the horizontal plane is preferably 45 degrees when the FTO substrate is obliquely placed; according to the invention, the FTO substrate conductive surface is placed in a downward inclined manner, so that particles generated in a solution in a hydrothermal reaction process can be prevented from being settled on the FTO substrate conductive surface to influence the orientation generation of the film.
The invention preferably carries out the hydrothermal reaction in a hydrothermal reaction kettle containing a polytetrafluoroethylene lining; in the present invention, the temperature of the hydrothermal reaction is preferably 120 to 180 ℃, more preferably 140 to 160 ℃; the time is preferably 4 to 12 hours, more preferably 6 hours. According to the invention, through the hydrothermal reaction, tetrabutyl titanate is subjected to hydrolysis reaction to generate oriented growth titanium dioxide, and tantalum ions are doped into the titanium dioxide to obtain a nano film precursor. In the present invention, hydrochloric acid provides a strong acidic condition for the hydrothermal reaction, and in a strong acidic environment, the hydrolysis process of tetrabutyl titanate is inhibited, the formation of long-Ti-O-Ti-chains is slowed down, and the formation of rutile structure is promoted, while Cl - Promoting hydrothermal reaction to generate rutile nano-column TiO 2 Plays a critical role.
After the hydrothermal reaction, the invention cools the obtained hydrothermal reaction liquid and takes out the FTO substrate on which the nano-film precursor grows. The present invention does not require any particular cooling means, such as natural cooling, which is well known to those skilled in the art. After the FTO substrate with the nano-film precursor is taken out, the FTO substrate with the nano-film precursor is preferably cleaned and dried. In the present invention, the cleaning preferably includes ultrapure water rinsing and ultrapure water immersion cleaning performed in this order. The present invention has no special requirement on the drying mode, and the drying mode known to those skilled in the art can be used, such as natural air drying.
The invention carries out annealing treatment on the nanometer film precursor to obtain the tantalum-doped titanium dioxide nanometer film. In the present invention, the annealing treatment is preferably performed in an air atmosphere, and the temperature of the annealing treatment is preferably 300 to 500 ℃, more preferably 350 to 450 ℃, and the time is preferably 30 to 120min, more preferably 60 to 90min. According to the invention, through the annealing treatment, residual impurity elements in the hydrothermal reaction process can be removed, the defects of the film are reduced, the crystallinity of the film is improved, the quality of the film is improved, and the photoelectric property of the film is favorably improved.
The invention provides the tantalum-doped titanium dioxide nano film prepared by the preparation method. In the present invention, the titanium dioxide is in the rutile phase; the doping amount of tantalum in the titanium dioxide nano film is 0.05-3.5% of the molar amount of titanium dioxide, preferably 0.5-3%, and more preferably 1-2%.
In the invention, the thickness of the tantalum-doped titanium dioxide nano film is preferably 1.3-3.3 μm, and more preferably 2-3 μm; the particle size of the titanium dioxide in the titanium dioxide nano film is preferably 100-500 nm, and more preferably 200-400 nm.
The invention provides application of the tantalum-doped titanium dioxide nano film as a photoelectric catalytic material. In the present invention, the application preferably includes (1) a storage reaction for converting solar energy into chemical energy using tantalum-doped titanium dioxide nano-films; (2) The tantalum-doped titanium dioxide nano film is used for catalytically decomposing water under the action of sunlight or electricity to generate hydrogen and oxygen; (3) The tantalum-doped titanium dioxide nano film is used for catalyzing and degrading organic matters under the action of light.
The tantalum-doped titanium dioxide nano-film and the preparation method and application thereof provided by the present invention are described in detail below with reference to the following examples, but they should not be construed as limiting the scope of the present invention.
Example 1
(1) Ultrasonically cleaning the FTO substrate by using acetone, ethanol and deionized water in sequence, and drying in a drying oven;
(2) Mixing 28mL of deionized water, 2mL of ethanol (analytically pure, 99.7 wt%), 30mL of hydrochloric acid (analytically pure, 38 wt%), 1mL of tetrabutyl titanate (analytically pure, 99.0 wt%), and 14.5 muL of tantalum ethoxide (purity of 99.9 wt%) to obtain a hydrothermal reaction precursor solution, wherein the molar weight of tantalum ethoxide in the hydrothermal reaction solution is 2% of that of tetrabutyl titanate;
(3) Pouring the hydrothermal reaction precursor solution into a polytetrafluoroethylene lining hydrothermal reaction kettle, leaning the FTO conductive surface downwards inclined to the inner lining wall of the reaction kettle containing the reaction solution in a V shape, immersing the FTO into the mixed solution, covering the reaction kettle, placing the reaction kettle in a constant-temperature oven, performing hydrothermal treatment for 6 hours at 150 ℃, and cooling to obtain a nano-film precursor;
(3) And taking out the FTO substrate, washing with ultrapure water, soaking, cleaning, naturally drying, and annealing at 400 ℃ for 60min in an air atmosphere to obtain the tantalum-doped titanium dioxide nano film with the thickness of 2 microns.
Example 2
Example 2 is different from example 1 in that tantalum ethoxide was added in an amount of 7.25. Mu.L so that the molar amount of tantalum ethoxide in the hydrothermal reaction solution was 1% of the molar amount of tetrabutyl titanate.
Example 3
Example 3 differs from example 1 in that tantalum ethoxide was added in an amount of 3.625 μ L so that the molar amount of tantalum ethoxide in the hydrothermal reaction solution was 0.5% of the molar amount of tetrabutyl titanate.
Comparative example 1
Comparative example 1 differs from example 1 in that tantalum ethoxide was not added to obtain pure titanium dioxide nano-films without doping tantalum.
Comparative example 2
Comparative example 2 is different from example 1 in that tantalum ethoxide was not added and 0.3112g of niobium chloride was added so that the molar amount of niobium chloride in the hydrothermal reaction solution was 0.25% of the molar amount of tetrabutyl titanate, thereby obtaining a niobium-doped titanium dioxide nano-film.
Performance testing
Scanning electron microscope tests are carried out on the pure titanium dioxide nano-film which is not doped with tantalum and is obtained in comparative example 1, and the obtained scanning electron microscope picture is shown in figure 1. As can be seen from FIG. 1, the titanium dioxide in the titanium dioxide nano film is in a nano rod-like structure, and the average diameter of the titanium dioxide nano rod is 40-70 nm.
Scanning electron microscope analysis was performed on the titanium dioxide nano-film obtained in example 1, which had a tantalum-doped molar concentration of 2%, and the results are shown in fig. 2. As can be seen from FIG. 2, the titanium dioxide in the tantalum-doped titanium dioxide nano-film is in a nanorod structure, the average diameter of the titanium dioxide nanorods is 400-500 nm, and the nanorods grow perpendicular to the FTO orientation and are uniformly distributed.
Scanning electron microscope analysis was performed on the titanium dioxide nano-film obtained in example 2, which had a tantalum-doped molar concentration of 1%, and the results are shown in fig. 3. As can be seen from FIG. 3, the titanium dioxide in the tantalum-doped titanium dioxide nano-film is in a nanorod structure, the average diameter of the titanium dioxide nanorods is 200-300 nm, and the nanorods grow perpendicular to the FTO orientation and are uniformly distributed.
Scanning electron microscope analysis was performed on the titanium dioxide nano-film obtained in example 3 and having a tantalum-doped molar concentration of 0.5%, and the results are shown in fig. 4. As can be seen from FIG. 4, the titanium dioxide in the tantalum-doped titanium dioxide nano-film is in a nanorod structure, the average diameter of the titanium dioxide nanorods is 100-200 nm, and the nanorods grow perpendicular to the FTO orientation and are uniformly distributed.
As can be seen from FIGS. 2 to 5, as the doping concentration decreases, the average diameter of the titanium dioxide nanorods decreases.
X-ray diffraction analysis was performed on the tantalum-doped titanium dioxide nano-films obtained in examples 1 to 3, and the obtained X-ray diffraction pattern was shown in FIG. 5. As can be seen from FIG. 5, the titanium dioxide films prepared by the present invention are all in the rutile phase. Tantalum doping suppresses the growth of (002) orientation but rather promotes the growth of (101) orientation, and the lattice is distorted due to tantalum ions doped into the lattice, so that peak position shift occurs.
Fig. 6 is an impedance spectrum of titanium dioxide nano-films with different tantalum doping concentrations, and it can be seen from fig. 6 that the resistance of the film gradually decreases with the increase of the tantalum doping concentration, and it can be considered that the resistance decreases due to the decrease of the film thickness caused by doping, and the doping improves the conductivity of the film, and promotes the improvement of the photoelectric performance.
At room temperature, the photo current density of the titanium dioxide nano-film with different tantalum doping concentrations was measured by using the CHI660E electrochemical workstation to select linear sweep voltammetry, and the obtained results are shown in fig. 7. As can be seen from FIG. 7, the photo current density of the undoped titanium dioxide nano-film at a voltage of 1.3V was 0.095mAcm -2 The photocurrent density of the titanium dioxide nano film with the doping concentration of 0.5 percent at the voltage of 1.3V is 0.13mAcm -2 The photocurrent density of the titanium dioxide nano-film with the doping concentration of 1 percent at the voltage of 1.3V is 0.27mAcm -2 The photocurrent density of the titanium dioxide nano-film with the doping concentration of 2 percent at the voltage of 1.3V is 0.31mAcm -2 Is 3.26 times of the photocurrent density of the pure titanium dioxide nano film. The photocurrent density of the niobium-doped titanium dioxide nano-film obtained in the comparative example 2 was measured, and the photocurrent density at a voltage of 1.3V was 0.094mAcm -2 。
At room temperature, a CHI660E electrochemical workstation is used for selecting current to test a time mode, a graph 8 shows the photo current density stability pictures of titanium dioxide nano films with different tantalum doping concentrations, and as can be seen from the graph 8, after 2000s of cycle test, the photo current densities of the films are not obviously changed, which indicates that the tantalum-doped titanium dioxide film has good stability.
Comparative example 3
(1) Ultrasonically cleaning the FTO substrate by using acetone, ethanol and deionized water in sequence, and drying in a drying oven;
(2) Mixing 28mL of deionized water, 2mL of ethanol (analytically pure, 99.7 wt%), 30mL of hydrochloric acid (analytically pure, 38 wt%), 1mL of tetrabutyl titanate (analytically pure, 99.0 wt%) and 29 muL of tantalum ethoxide (purity of 99.9 wt%) to obtain a hydrothermal reaction precursor solution, wherein the molar weight of tantalum ethoxide in the hydrothermal reaction solution is 4% of that of tetrabutyl titanate;
(3) Pouring the hydrothermal reaction precursor solution into a polytetrafluoroethylene lining hydrothermal reaction kettle, leaning the FTO conductive surface downwards inclined to the inner lining wall of the reaction kettle containing the reaction solution in a V shape, immersing the FTO into the mixed solution, covering the reaction kettle, placing the reaction kettle in a constant-temperature oven, performing hydrothermal treatment for 4 hours at 120 ℃, and cooling to obtain a nano-film precursor;
(4) And taking out the FTO substrate, washing with ultrapure water, soaking, cleaning, naturally drying, and annealing at 300 ℃ for 30min in the air atmosphere to obtain the tantalum-doped titanium dioxide nano film with the thickness of 1.3 mu m.
Scanning electron microscope analysis is carried out on the tantalum-doped titanium dioxide nano film, and the result shows that the particle size of the titanium dioxide nano rod is 500-550 nm. The result of performing photocurrent density test on the tantalum-doped titanium dioxide nano film shows that the photocurrent density of the tantalum-doped titanium dioxide nano film is 0.071mAcm when the voltage is 1.3V -2 。
Comparative example 4
(1) Ultrasonically cleaning the FTO substrate by using acetone, ethanol and deionized water in sequence, and drying in a drying oven;
(2) Mixing 28mL of deionized water, 2mL of ethanol (analytically pure, 99.7 wt%), 30mL of hydrochloric acid (analytically pure, 38 wt%), 1mL of tetrabutyl titanate (analytically pure, 99.0 wt%) and 43.5 mu L of tantalum ethoxide (purity is 99.9 wt%) to obtain a hydrothermal reaction precursor solution, wherein the molar weight of the tantalum ethoxide in the hydrothermal reaction solution is 6% of that of the tetrabutyl titanate;
(3) Pouring the hydrothermal reaction precursor solution into a polytetrafluoroethylene-lined hydrothermal reaction kettle, enabling an FTO conductive surface to lean against the inner lining wall of the reaction kettle filled with the reaction solution in a downward inclined mode in a V shape, immersing the FTO into the mixed solution, tightly covering the reaction kettle, placing the reaction kettle in a constant-temperature oven, carrying out hydrothermal treatment for 8 hours at 180 ℃, and cooling to obtain a nano-film precursor;
(4) And taking out the FTO substrate, washing with ultrapure water, soaking, cleaning, naturally drying, and annealing at 500 ℃ for 120min in the air atmosphere to obtain the tantalum-doped titanium dioxide nano film with the thickness of 1 micrometer.
Scanning electron microscope analysis is carried out on the tantalum-doped titanium dioxide nano film, and the result shows that the particle size of the titanium dioxide nano rod is 550-600 nm. The tantalum-doped titanium dioxide nano film is preparedThe photocurrent density test was carried out, and the result showed that the photocurrent density at a voltage of 1.3V was 0.023mAcm -2 。
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and amendments can be made without departing from the principle of the present invention, and these modifications and amendments should also be considered as the protection scope of the present invention.
Claims (5)
1. A preparation method of a tantalum-doped titanium dioxide nano film comprises the following steps:
(1) Mixing ethanol, hydrochloric acid, tetrabutyl titanate, a soluble tantalum source and water to obtain a hydrothermal reaction precursor solution, wherein the molar ratio of the soluble tantalum source to the tetrabutyl titanate in the hydrothermal reaction precursor solution is 0.05-3.5: 100, the soluble tantalum source is tantalum ethoxide; the volume ratio of ethanol, hydrochloric acid, tetrabutyl titanate and water in the hydrothermal reaction precursor solution is (0.5-5): (20 to 40): (0.5 to 3): (22-35);
the mass concentration of the hydrochloric acid is 36-38%;
(2) Immersing an FTO substrate in the hydrothermal reaction precursor solution, carrying out hydrothermal reaction, and cooling to obtain a nano-film precursor on the conductive surface of the FTO substrate;
(3) Annealing the nanometer film precursor to obtain a tantalum-doped titanium dioxide nanometer film; the temperature of the annealing treatment is 400 ℃, and the time is 60min;
the tantalum-doped titanium dioxide nano film comprises a titanium dioxide nano film and tantalum doped in a crystal lattice of the titanium dioxide, wherein the titanium dioxide is in a rutile phase; the amount of tantalum in the titanium dioxide nano film is 0.05-3.5% of that of the titanium dioxide;
the thickness of the tantalum-doped titanium dioxide nano film is 1.3-3.3 mu m; the particle size of the titanium dioxide in the titanium dioxide nano film is 100-500 nm.
2. The method according to claim 1, wherein in the step (2), the FTO substrate is immersed in the following manner: and (3) placing the FTO substrate with the conductive surface facing downwards and obliquely immersing the FTO substrate in the hydrothermal reaction precursor solution.
3. The preparation method according to claim 1, wherein the temperature of the hydrothermal reaction is 120-180 ℃ and the time is 4-12 h.
4. The tantalum-doped titanium dioxide nano-film prepared by the preparation method of any one of claims 1 to 3, which comprises the titanium dioxide nano-film and tantalum doped in a crystal lattice of the titanium dioxide, wherein the titanium dioxide is in a rutile phase; the amount of tantalum in the titanium dioxide nano film is 0.05-3.5% of that of the titanium dioxide;
the thickness of the tantalum-doped titanium dioxide nano film is 1.3-3.3 mu m; the particle size of the titanium dioxide in the titanium dioxide nano film is 100-500 nm.
5. The use of the tantalum-doped titanium dioxide nanofilm of claim 4 as a photocatalytic material.
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