CN107974661A - A kind of preparation method of the titania-doped film of tantalum - Google Patents
A kind of preparation method of the titania-doped film of tantalum Download PDFInfo
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- CN107974661A CN107974661A CN201610919903.9A CN201610919903A CN107974661A CN 107974661 A CN107974661 A CN 107974661A CN 201610919903 A CN201610919903 A CN 201610919903A CN 107974661 A CN107974661 A CN 107974661A
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- Prior art keywords
- tantalum
- preparation
- film
- titania
- base material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Catalysts (AREA)
Abstract
The invention discloses a kind of preparation method of the titania-doped film of tantalum, the preparation method includes：S1, provide a base material；S2, using TiN targets as Ti sources, tantalum piece is positioned over above TiN targets, in He and N2In atmosphere, the TiAlN thin film of tantalum doping is grown on base material using magnetron sputtering method；S3, the TiAlN thin film for adulterating tantalum are in O2Anneal in atmosphere, obtain the titanium deoxid film of tantalum doping.The titania-doped film of tantalum in the present invention is with good stability, can effectively improve the service life of film, and in addition the titania-doped film of the tantalum also has high light transmittance, has preferable photocatalysis performance, can effectively improve the utilization rate of sunlight.
Description
Technical field
The present invention relates to semiconductor film technique field, more particularly to a kind of preparation side of the titania-doped film of tantalum
Method.
Background technology
With expanding economy, water pollution situation is serious all the more, and photocatalysis technology is at waste water developed in recent years
Reason technology.Photochemical catalyst is the material for causing catalytic reaction under light irradiation, and by light-catalyzed reaction, generation has Strong oxdiative ability
Hydroxyl radical free radical and super oxonium ion, come decomposing organic pollutant matter of degrading.
Titanium dioxide (TiO2) it is a kind of most extensive semiconductor light-catalyst, it is widely used in photocatalysis field.
But TiO2Greater band gap, can only show photochemical activity in ultra-violet (UV) band of the wavelength less than 378nm, while its photoelectron and hole hold
Easily occur it is compound, so as to reduce photocatalysis efficiency.
It is excellent that anatase titania (3.2e V) has that stability is high, safe and non-toxic, cheap, photo-oxidative is strong etc.
Gesture, is widely used in curbing environmental pollution, the numerous areas such as solar cell, sensor.But Carrier recombination probability is high,
The low development that restrict field of titanium dioxide photocatalysis of solar energy utilization ratio, therefore how substantial amounts of work sutdy improves titanium dioxide
The sun light utilization efficiency of titanium.
Therefore, in view of the above-mentioned problems, being necessary to propose a kind of preparation method of the titania-doped film of tantalum.
The content of the invention
In view of this, the present invention provides a kind of preparation method of the titania-doped film of tantalum.
In order to realize foregoing invention purpose, the present invention provides a kind of preparation method of the titania-doped film of tantalum, it is special
Sign is that the preparation method includes：
S1, provide a base material；
S2, using TiN targets as Ti sources, tantalum piece is positioned over above TiN targets, in He and N2In atmosphere, using magnetron sputtering method
The TiAlN thin film of tantalum doping is grown on base material；
S3, the TiAlN thin film for adulterating tantalum are in O2Anneal in atmosphere, obtain the titanium deoxid film of tantalum doping.
As a further improvement on the present invention, the base material is glass or ceramics.
As a further improvement on the present invention, the magnetron sputtering method in the step S2 is radio-frequency magnetron sputter method, parameter
For：1~2Pa of air pressure, 1~100W of power, sputtering time 0.5h~1h.
As a further improvement on the present invention, the flow of He is 100~200sccm, N in the step S22Flow be
100~200sccm.
As a further improvement on the present invention, O in the step S32Flow be 100~200sccm
As a further improvement on the present invention, annealing conditions are in the step S3：400~600 DEG C of annealing temperature, annealing
1~2h of time.
Compared with prior art, the beneficial effects of the invention are as follows：
The titania-doped film of tantalum in the present invention is with good stability, and can effectively improve film uses the longevity
Life, in addition the titania-doped film of the tantalum also has high light transmittance, has preferable photocatalysis performance, can effectively improve too
The utilization rate of sunlight.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in invention, for those of ordinary skill in the art, without creative efforts,
Other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the flow diagram of the preparation method of the titania-doped film of tantalum in the present invention.
Embodiment
The technical solution in the embodiment of the present invention will be described in detail below, it is clear that described embodiment is only
Only it is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained on the premise of creative work is not made, belong to the model that the present invention protects
Enclose.
Join shown in Fig. 1, a kind of preparation method of the titania-doped film of tantalum in the present invention, the preparation method includes：
S1, provide a base material；
S2, using TiN targets as Ti sources, tantalum piece is positioned over above TiN targets, in He and N2In atmosphere, using magnetron sputtering method
The TiAlN thin film of tantalum doping is grown on base material；
S3, the TiAlN thin film for adulterating tantalum are in O2Anneal in atmosphere, obtain the titanium deoxid film of tantalum doping.
Preferably, base material is glass or ceramics.
Preferably, the magnetron sputtering method in step S2 is radio-frequency magnetron sputter method, and parameter is：1~2Pa of air pressure, power 1~
100W, sputtering time 0.5h~1h.
Preferably, the flow of He is 100~200sccm, N in step S22Flow be 100~200sccm.
Preferably, O in step S32Flow be 100~200sccm
Preferably, annealing conditions are in step S3：400~600 DEG C of annealing temperature, 1~2h of annealing time.
In the specific embodiment of the present invention, a kind of preparation method of the titania-doped film of tantalum, the preparation method
Including：
S1, provide a glass baseplate；
S2, using Ti targets as Ti sources, tantalum piece is positioned over above Ti targets, in He and N2In atmosphere, existed using magnetron sputtering method
The TiAlN thin film of tantalum doping is grown on glass baseplate, wherein, the flow of He is 100sccm, N2Flow be 200sccm, magnetic control splashes
It is radio-frequency magnetron sputter method to penetrate method, and parameter is：Air pressure 2Pa, power 50W, sputtering time 0.5h；
S3, the TiAlN thin film for adulterating tantalum are in O2Anneal in atmosphere, obtain the titanium deoxid film of tantalum doping, wherein,
O2Flow be 150sccm, annealing conditions are：600 DEG C of annealing temperature, annealing time 1h.
As can be seen from the above technical solutions, the titania-doped film of tantalum in the present invention is with good stability,
The service life of film can be effectively improved, in addition the titania-doped film of the tantalum also has high light transmittance, has preferable
Photocatalysis performance, can effectively improve the utilization rate of sunlight.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference numeral in claim should not be considered as to the involved claim of limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical solution, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical solution in each embodiment can also be closed through appropriate, and forming those skilled in the art can
With the other embodiment of understanding.
Claims (6)
1. a kind of preparation method of the titania-doped film of tantalum, it is characterised in that the preparation method includes：
S1, provide a base material；
S2, using TiN targets as Ti sources, tantalum piece is positioned over above TiN targets, in He and N2In atmosphere, using magnetron sputtering method in base material
The TiAlN thin film of upper growth tantalum doping；
S3, the TiAlN thin film for adulterating tantalum are in O2Anneal in atmosphere, obtain the titanium deoxid film of tantalum doping.
2. preparation method according to claim 1, it is characterised in that the base material is glass or ceramics.
3. preparation method according to claim 1, it is characterised in that the magnetron sputtering method in the step S2 is radio-frequency magnetic
Sputtering method is controlled, parameter is：1~2Pa of air pressure, 1~100W of power, sputtering time 0.5h~1h.
4. preparation method according to claim 1, it is characterised in that in the step S2 flow of He for 100~
200sccm, N2Flow be 100~200sccm.
5. preparation method according to claim 1, it is characterised in that O in the step S32Flow for 100~
200sccm。
6. preparation method according to claim 1, it is characterised in that annealing conditions are in the step S3：Annealing temperature
400~600 DEG C, 1~2h of annealing time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610919903.9A CN107974661A (en) | 2016-10-21 | 2016-10-21 | A kind of preparation method of the titania-doped film of tantalum |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610919903.9A CN107974661A (en) | 2016-10-21 | 2016-10-21 | A kind of preparation method of the titania-doped film of tantalum |
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| CN107974661A true CN107974661A (en) | 2018-05-01 |
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| CN201610919903.9A Withdrawn CN107974661A (en) | 2016-10-21 | 2016-10-21 | A kind of preparation method of the titania-doped film of tantalum |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112142102A (en) * | 2020-09-24 | 2020-12-29 | 湖北大学 | Tantalum-doped titanium dioxide nano film and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201539995U (en) * | 2009-01-19 | 2010-08-04 | 东莞市康达机电工程有限公司 | Titanium nitride metal ceramic thin film mixed with tantalum metal |
| CN102534531A (en) * | 2012-01-10 | 2012-07-04 | 清华大学 | Preparation method of titanium dioxide/titanium nitride composite film with adjustable band gaps |
-
2016
- 2016-10-21 CN CN201610919903.9A patent/CN107974661A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201539995U (en) * | 2009-01-19 | 2010-08-04 | 东莞市康达机电工程有限公司 | Titanium nitride metal ceramic thin film mixed with tantalum metal |
| CN102534531A (en) * | 2012-01-10 | 2012-07-04 | 清华大学 | Preparation method of titanium dioxide/titanium nitride composite film with adjustable band gaps |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112142102A (en) * | 2020-09-24 | 2020-12-29 | 湖北大学 | Tantalum-doped titanium dioxide nano film and preparation method and application thereof |
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Application publication date: 20180501 |