CN112133778A - 一种基于硒化银量子点的柔性光电探测器及制作方法 - Google Patents

一种基于硒化银量子点的柔性光电探测器及制作方法 Download PDF

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CN112133778A
CN112133778A CN202011023098.4A CN202011023098A CN112133778A CN 112133778 A CN112133778 A CN 112133778A CN 202011023098 A CN202011023098 A CN 202011023098A CN 112133778 A CN112133778 A CN 112133778A
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唐路平
郭迎庆
王皖君
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Nanjing Forestry University
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Abstract

本发明涉及一种基于硒化银量子点的柔性光电探测器，引入无毒的硒化银量子点代替铅盐量子点作为光吸收材料，可实现探测器的无铅化和无毒化，并结合柔性基板设计，获得无毒柔性光电探测器设计；此外进一步针对柔性基板（1）与硒化银量子点层（2）之间区域，加入具有高电子迁移率的石墨烯或二硫化钼作为电荷提取材料设计，可增加光电探测器的响应度，进一步获得高响应度的柔性光电探测器；使其更适合应用于可穿戴设备，能够有效提高可穿戴设备的使用安全性与稳定性；本发明还设计了针对此光电探测器的制作方法，针对所设计光电探测器结构，通过多种工艺的协同，设计全新制作方式，能够提高设计光电探测器制作的工艺标准，保证光电探测器的安全性与稳定性。

Description

一种基于硒化银量子点的柔性光电探测器及制作方法
技术领域
本发明涉及一种基于硒化银量子点的柔性光电探测器及制作方法，属于半导体光电子器件技术领域。
背景技术
光电探测器是用于进行光电探测的传感器，随着智能设备的普及，柔性光电探测器可广泛应用于可穿戴设备，受益于量子限域效应，半导体量子点作为光吸收材料展现出了多种优越的性能，例如吸收波长随尺寸可调和吸收系数大等；然而目前光电探测器中常用的光吸收量子点为含有有毒重金属铅的硫化铅和硒化铅量子点，这就限制了现有光电探测器在可穿戴设备方面的应用。
发明内容
本发明所要解决的技术问题是提供一种基于硒化银量子点的柔性光电探测器，引入无毒的硒化银量子点，结合柔性基板设计，获得无毒、高响应度的柔性光电探测器，能够有效提高可穿戴设备的使用安全性与稳定性。
本发明为了解决上述技术问题采用以下技术方案：本发明设计了一种基于硒化银量子点的柔性光电探测器，应用于人体穿戴设备中，实现光电检测，所述柔性光电探测器包括柔性基板、硒化银量子点层、以及两根电极；其中，硒化银量子点层固定覆盖设置于柔性基板的上表面，硒化银量子点层用于实现光吸收；两根电极分别穿过硒化银量子点层、并设置于柔性基板的上表面，硒化银量子点层与两根电极相对接，各根电极上的底端分别与柔性基板上表面固定对接，两根电极之间保持预设间距，各根电极顶端的高度均不低于硒化银量子点层上表面高度。
作为本发明的一种优选技术方案：还包括位于所述柔性基板与所述硒化银量子点层之间的石墨烯层，石墨烯层固定覆盖设置于柔性基板的上表面，硒化银量子点层固定覆盖设置于硒化银量子点层的上表面，所述两根电极分别依次穿过硒化银量子点层与石墨烯层、并设置于柔性基板的上表面，石墨烯层与硒化银量子点层分别均与两根电极相对接。
作为本发明的一种优选技术方案：还包括位于所述柔性基板与所述硒化银量子点层之间的二硫化钼层，二硫化钼层固定覆盖设置于柔性基板的上表面，硒化银量子点层固定覆盖设置于硒化银量子点层的上表面，所述两根电极分别依次穿过硒化银量子点层与二硫化钼层、并设置于柔性基板的上表面，二硫化钼层与硒化银量子点层分别均与两根电极相对接。
作为本发明的一种优选技术方案：所述两根电极底端分别与所述柔性基板上表面相对接的位置，分别位于柔性基板上表面彼此相对的两侧边缘位置。
作为本发明的一种优选技术方案：所述柔性基板为聚乙烯对苯二甲酸酯基板。
作为本发明的一种优选技术方案：所述两根电极均为金电极。
与上述相对应，本发明所要解决的技术问题是提供一种基于硒化银量子点的柔性光电探测器的制作方法，针对所设计光电探测器结构，通过多种工艺的协同，设计全新制作方式，能够提高设计光电探测器制作的工艺标准，保证光电探测器的稳定性。
本发明为了解决上述技术问题采用以下技术方案：本发明设计了一种基于硒化银量子点的柔性光电探测器的制作方法，包括如下步骤：
步骤A. 应用高温热分解法制备硒化银量子点，然后进入步骤B；
步骤B. 在柔性基板上表面制备两根电极，然后进入步骤C；
步骤C. 将硒化银量子点分散到甲苯溶液中，并将含有硒化银量子点的甲苯溶液旋涂到柔性基板的上表面，构成硒化银量子点层。
作为本发明的一种优选技术方案：还包括步骤AB和步骤BC分别如下，其中，执行完步骤A后，进入步骤AB；执行完步骤B后，进入步骤BC；
步骤AB. 应用CVD法在铜基板上生长石墨烯或者二硫化钼，然后进入步骤B；
步骤BC. 应用湿法转移方式，将所获得的石墨烯或者二硫化钼转移到柔性基板的上表面，构成石墨烯层或者二硫化钼层，然后进入步骤C；
所述步骤C中，将含有硒化银量子点的甲苯溶液旋涂到所构建的石墨烯层上表面或者二硫化钼层上表面，构成硒化银量子点层。
作为本发明的一种优选技术方案：所述步骤B中，应用电子束热蒸发法和剥离工艺在柔性基板上表面制备两根电极。
本发明所述一种基于硒化银量子点的柔性光电探测器，采用以上技术方案与现有技术相比，具有以下技术效果：
本发明所设计基于硒化银量子点的柔性光电探测器，引入无毒的硒化银量子点代替铅盐量子点作为光吸收材料，可实现探测器的无铅化和无毒化，并结合柔性基板设计，获得无毒柔性光电探测器设计；此外进一步针对柔性基板与硒化银量子点层之间区域，加入具有高电子迁移率的石墨烯或二硫化钼作为电荷提取材料设计，可增加光电探测器的响应度，进一步获得高响应度的柔性光电探测器；使其更适合应用于可穿戴设备，能够有效提高可穿戴设备的使用安全性与稳定性；本发明还设计了针对此光电探测器的制作方法，针对所设计光电探测器结构，通过多种工艺的协同，设计全新制作方式，能够提高设计光电探测器制作的工艺标准，保证光电探测器的安全性与稳定性。
附图说明
图1是本发明所设计一种基于硒化银量子点的柔性光电探测器的剖面示意图。
其中，1. 柔性基板，2. 硒化银量子点层，3. 电极，4-1. 石墨烯层，4-2. 二硫化钼层。
具体实施方式
下面结合说明书附图对本发明的具体实施方式作进一步详细的说明。
本发明设计了一种基于硒化银量子点的柔性光电探测器，应用于人体穿戴设备中，实现光电检测，如图1所示，所述柔性光电探测器包括柔性基板1、硒化银量子点层2、以及两根电极3；其中，硒化银量子点层2固定覆盖设置于柔性基板1的上表面，硒化银量子点层2用于实现光吸收；两根电极3分别穿过硒化银量子点层2、并设置于柔性基板1的上表面，硒化银量子点层2与两根电极3相对接，各根电极3上的底端分别与柔性基板1上表面固定对接，两根电极3之间保持预设间距，各根电极3顶端的高度均不低于硒化银量子点层2上表面高度。
这里设计应用硒化银量子点层2代替铅盐量子点，作为光吸收材料可实现探测器的无铅化和无毒化，使其更适合应用于可穿戴设备。
针对上述所设计柔性光电探测器基础技术方案，如图1所示，本发明进一步针对所述柔性基板1与所述硒化银量子点层2之间区域，设计加入石墨烯层4-1或者二硫化钼层4-2；其中，对于石墨烯层4-1的结构设计中，石墨烯层4-1固定覆盖设置于柔性基板1的上表面，硒化银量子点层2固定覆盖设置于硒化银量子点层2的上表面，所述两根电极3分别依次穿过硒化银量子点层2与石墨烯层4-1、并设置于柔性基板1的上表面，石墨烯层4-1与硒化银量子点层2分别均与两根电极3相对接。
对于二硫化钼层4-2的结构设计中，二硫化钼层4-2固定覆盖设置于柔性基板1的上表面，硒化银量子点层2固定覆盖设置于硒化银量子点层2的上表面，所述两根电极3分别依次穿过硒化银量子点层2与二硫化钼层4-2、并设置于柔性基板1的上表面，二硫化钼层4-2与硒化银量子点层2分别均与两根电极3相对接。
针对柔性基板1与硒化银量子点层2之间区域，所设计加入的石墨烯层4-1或者二硫化钼层4-2，具有高电子迁移率，作为电荷提取材料可增加光电探测器的响应度。
本发明所设计基于硒化银量子点的柔性光电探测器，在实际应用当中，具体进一步设计两根电极3底端分别与所述柔性基板1上表面相对接的位置，分别位于柔性基板1上表面彼此相对的两侧边缘位置；并且在材料选择应用方面，针对柔性基板1，具体选择采用聚乙烯对苯二甲酸酯基板，充分应用了该材料的柔性特性，适用于人体穿戴设备；针对两根电极3，具体选择应用金电极，使之拥有较好的导电性。
针对上述所设计基于硒化银量子点的柔性光电探测器，在实际应用中，本发明具体设计了针对此光电探测器的制作方法，具体执行如下步骤A至步骤C。
步骤A. 应用高温热分解法制备硒化银量子点，然后进入步骤AB。
步骤AB. 应用CVD法在铜基板上生长石墨烯或者二硫化钼，然后进入步骤B。
步骤B. 应用电子束热蒸发法和剥离工艺在柔性基板1上表面制备两根电极3，然后进入步骤BC。
实际应用中，诸如设计应用150微米厚的聚乙烯对苯二甲酸酯基板，即上述步骤B中，应用电子束热蒸发法和剥离工艺在150微米厚的聚乙烯对苯二甲酸酯基板上表面制备两根电极3。
步骤BC. 应用湿法转移方式，将所获得的石墨烯或者二硫化钼转移到柔性基板1的上表面，构成石墨烯层4-1或者二硫化钼层4-2，然后进入步骤C。
步骤C. 将硒化银量子点分散到甲苯溶液中，并将含有硒化银量子点的甲苯溶液旋涂到所构建的石墨烯层4-1上表面或者二硫化钼层4-2上表面，构成硒化银量子点层2。
实际应用当中，上述步骤C具体设计按1：5的质量比，将硒化银量子点分散到甲苯溶液中，然后将含有硒化银量子点的甲苯溶液旋涂到所构建的石墨烯层4-1上表面或者二硫化钼层4-2上表面，获得20纳米厚的硒化银量子点层2。
上述技术方案所设计基于硒化银量子点的柔性光电探测器，引入无毒的硒化银量子点代替铅盐量子点作为光吸收材料，可实现探测器的无铅化和无毒化，并结合柔性基板设计，获得无毒柔性光电探测器设计；此外进一步针对柔性基板1与硒化银量子点层2之间区域，加入具有高电子迁移率的石墨烯或二硫化钼作为电荷提取材料设计，可增加光电探测器的响应度，进一步获得高响应度的柔性光电探测器；使其更适合应用于可穿戴设备，能够有效提高可穿戴设备的使用安全性与稳定性；本发明还设计了针对此光电探测器的制作方法，针对所设计光电探测器结构，通过多种工艺的协同，设计全新制作方式，能够提高设计光电探测器制作的工艺标准，保证光电探测器的安全性与稳定性。
上面结合附图对本发明的实施方式作了详细说明，但是本发明并不限于上述实施方式，在本领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下做出各种变化。

Claims (9)

1.一种基于硒化银量子点的柔性光电探测器，应用于人体穿戴设备中，实现光电检测，其特征在于：所述柔性光电探测器包括柔性基板（1）、硒化银量子点层（2）、以及两根电极（3）；其中，硒化银量子点层（2）固定覆盖设置于柔性基板（1）的上表面，硒化银量子点层（2）用于实现光吸收；两根电极（3）分别穿过硒化银量子点层（2）、并设置于柔性基板（1）的上表面，硒化银量子点层（2）与两根电极（3）相对接，各根电极（3）上的底端分别与柔性基板（1）上表面固定对接，两根电极（3）之间保持预设间距，各根电极（3）顶端的高度均不低于硒化银量子点层（2）上表面高度。
2.根据权利要求1所述一种基于硒化银量子点的柔性光电探测器，其特征在于：还包括位于所述柔性基板（1）与所述硒化银量子点层（2）之间的石墨烯层（4-1），石墨烯层（4-1）固定覆盖设置于柔性基板（1）的上表面，硒化银量子点层（2）固定覆盖设置于硒化银量子点层（2）的上表面，所述两根电极（3）分别依次穿过硒化银量子点层（2）与石墨烯层（4-1）、并设置于柔性基板（1）的上表面，石墨烯层（4-1）与硒化银量子点层（2）分别均与两根电极（3）相对接。
3.根据权利要求1所述一种基于硒化银量子点的柔性光电探测器，其特征在于：还包括位于所述柔性基板（1）与所述硒化银量子点层（2）之间的二硫化钼层（4-2），二硫化钼层（4-2）固定覆盖设置于柔性基板（1）的上表面，硒化银量子点层（2）固定覆盖设置于硒化银量子点层（2）的上表面，所述两根电极（3）分别依次穿过硒化银量子点层（2）与二硫化钼层（4-2）、并设置于柔性基板（1）的上表面，二硫化钼层（4-2）与硒化银量子点层（2）分别均与两根电极（3）相对接。
4.根据权利要求1至3中任意一项所述一种基于硒化银量子点的柔性光电探测器，其特征在于：所述两根电极（3）底端分别与所述柔性基板（1）上表面相对接的位置，分别位于柔性基板（1）上表面彼此相对的两侧边缘位置。
5.根据权利要求4所述一种基于硒化银量子点的柔性光电探测器，其特征在于：所述柔性基板（1）为聚乙烯对苯二甲酸酯基板。
6.根据权利要求4所述一种基于硒化银量子点的柔性光电探测器，其特征在于：所述两根电极（3）均为金电极。
7.一种针对权利要求2或3所述一种基于硒化银量子点的柔性光电探测器的制作方法，其特征在于，包括如下步骤：
步骤A. 应用高温热分解法制备硒化银量子点，然后进入步骤B；
步骤B. 在柔性基板（1）上表面制备两根电极（3），然后进入步骤C；
步骤C. 将硒化银量子点分散到甲苯溶液中，并将含有硒化银量子点的甲苯溶液旋涂到柔性基板（1）的上表面，构成硒化银量子点层（2）。
8.根据权利要求7所述一种基于硒化银量子点的柔性光电探测器的制作方法，其特征在于：还包括步骤AB和步骤BC分别如下，其中，执行完步骤A后，进入步骤AB；执行完步骤B后，进入步骤BC；
步骤AB. 应用CVD法在铜基板上生长石墨烯或者二硫化钼，然后进入步骤B；
步骤BC. 应用湿法转移方式，将所获得的石墨烯或者二硫化钼转移到柔性基板（1）的上表面，构成石墨烯层（4-1）或者二硫化钼层（4-2），然后进入步骤C；
所述步骤C中，将含有硒化银量子点的甲苯溶液旋涂到所构建的石墨烯层（4-1）上表面或者二硫化钼层（4-2）上表面，构成硒化银量子点层（2）。
9.根据权利要求7或8所述一种基于硒化银量子点的柔性光电探测器的制作方法，其特征在于：所述步骤B中，应用电子束热蒸发法和剥离工艺在柔性基板（1）上表面制备两根电极（3）。
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