CN112117324A - Substrate with aluminum nitride nucleation layer and method of fabricating the same - Google Patents

Substrate with aluminum nitride nucleation layer and method of fabricating the same Download PDF

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Publication number
CN112117324A
CN112117324A CN202010413464.0A CN202010413464A CN112117324A CN 112117324 A CN112117324 A CN 112117324A CN 202010413464 A CN202010413464 A CN 202010413464A CN 112117324 A CN112117324 A CN 112117324A
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aluminum nitride
nucleation layer
nitride nucleation
substrate
temperature
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谢伟杰
黄彦纶
刘嘉哲
李依晴
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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Abstract

A substrate with an aluminum nitride nucleation layer comprises a silicon substrate and an aluminum nitride nucleation layer; the aluminum nitride nucleation layer is arranged on the silicon substrate; wherein the thickness of the aluminum nitride nucleation layer is 20nm to 200 nm; the surface roughness of the aluminum nitride nucleating layer is less than or equal to 0.4 nm; a full width at half maximum (FWHM) of a peak of an X-ray diffraction rocking curve of the aluminum nitride nucleation layer is less than or equal to 4000 arc seconds; there are no slip lines in the aluminum nitride nucleation layer. The silicon substrate is a silicon-containing substrate, and the material thereof may be, for example, silicon carbide (SiC) or silicon (Si). A method for fabricating a substrate having an aluminum nitride nucleation layer is also disclosed. Since the aluminum nitride nucleation layer of the substrate is free from slip lines, the epitaxial layer formed subsequently can have better quality.

Description

Substrate with aluminum nitride nucleation layer and method of fabricating the same
Technical Field
The present invention relates to substrates having nucleation layers; in particular, to a substrate having an aluminum nitride nucleation layer and a method for fabricating the same.
Background
Most of the conventional semiconductor devices are formed by growing a nucleation layer on a substrate, growing an epitaxial layer on the nucleation layer, and then fabricating the device structure on the epitaxial layer. In the prior art, most semiconductor devices are aluminum nitride devices as the main material of the nucleation layer. However, lattice mismatch and thermal mismatch between the aluminum nitride and the silicon substrate still exist, and therefore, slip lines, poor crystallization quality or excessive surface roughness are easily generated between the aluminum nitride nucleation layer and the silicon substrate in the conventional semiconductor substrate, so that defects are often generated when an epitaxial layer of other semiconductor materials is subsequently formed on the surface of the aluminum nitride nucleation layer.
Therefore, the conventional semiconductor substrate still has the existing technical problems and needs to be overcome.
Disclosure of Invention
In view of the above, the present invention is directed to a substrate having an aluminum nitride nucleation layer, which has no slip lines, so as to significantly improve the epitaxial quality of an epitaxial layer of another semiconductor material formed on the surface of the aluminum nitride nucleation layer.
In order to achieve the above objects, the present invention provides a substrate having an aluminum nitride nucleation layer, which comprises a silicon substrate and an aluminum nitride nucleation layer; the aluminum nitride nucleation layer is arranged on the silicon substrate; wherein the thickness of the aluminum nitride nucleation layer is 20nm to 200 nm; the surface roughness of the aluminum nitride nucleating layer is less than or equal to 0.4 nm; a full width at half maximum (FWHM) of a peak of an X-ray diffraction rocking curve of the aluminum nitride nucleation layer is less than or equal to 4000 arc seconds (arc sec); there is no slip line (slip line) in the aluminum nitride nucleation layer.
Another object of the present invention is to provide a method for manufacturing a substrate having an aluminum nitride nucleation layer, which includes: providing a reaction environment; placing a silicon substrate in the reaction environment; and providing a growth temperature and a growth pressure in the reaction environment to form an aluminum nitride nucleation layer on the silicon substrate; wherein the growth temperature is 950 ℃ to 1000 ℃, and the growth pressure is 80torr to 90 torr; stopping introducing the reaction gas into the reaction environment when the aluminum nitride nucleation layer reaches a preset thickness; and cooling to a preset temperature under the condition of cooling at 10-20 ℃/min to obtain the substrate with the aluminum nitride nucleation layer.
Another object of the present invention is to provide a method for manufacturing a substrate having an aluminum nitride nucleation layer, which includes: providing a reaction environment; placing a silicon substrate in the reaction environment; providing a growth temperature and a growth pressure in the reaction environment; introducing a first reaction gas to form an aluminum nitride nucleation layer on the silicon substrate; wherein the growth temperature is 950 ℃ to 1000 ℃, and the growth pressure is 80torr to 90 torr; when the aluminum nitride nucleation layer grows to a first preset thickness, stopping introducing the first reaction gas into the reaction environment; providing a first temperature in the reaction environment, and introducing a second reaction gas to form a gallium nitride epitaxial layer on the aluminum nitride nucleation layer, wherein the first temperature is 600 ℃ to 1200 ℃; when the gallium nitride epitaxial layer grows to a second preset thickness, stopping introducing the second reaction gas into the reaction environment; and cooling to a preset temperature under the condition of cooling at 10-20 ℃/min to obtain the substrate with the aluminum nitride nucleation layer.
The invention has the effect that the aluminum nitride nucleating layer of the substrate does not have slip lines, so that the epitaxial quality of the epitaxial layer can be obviously improved when the epitaxial layer of other semiconductor materials (such as gallium nitride) is formed on the surface of the aluminum nitride nucleating layer subsequently, and the efficiency of the semiconductor element is further improved.
Drawings
FIG. 1 is a side view of a substrate having an aluminum nitride nucleation layer according to a first embodiment of the present invention;
FIG. 2 is a schematic view of a substrate with an aluminum nitride nucleation layer disposed on a rotatable stage in a reaction environment according to a first embodiment of the present invention;
FIG. 3 is a flowchart of a method of fabricating a substrate having an aluminum nitride nucleation layer according to a first embodiment of the present invention;
FIG. 4 is a side view of a substrate having an aluminum nitride nucleation layer with a semiconductor epitaxial layer disposed thereon according to a second embodiment of the present invention;
fig. 5 is a flowchart of a method of fabricating a substrate having an aluminum nitride nucleation layer according to a second embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the present invention, a preferred embodiment will be described in detail below with reference to the accompanying drawings. Referring to fig. 1, a substrate 1 according to a first embodiment of the present invention includes a silicon substrate 10 and an aluminum nitride nucleation layer 12. An aluminum nitride nucleation layer 12 is disposed on the silicon substrate 10. There are no slip lines in the aluminum nitride nucleation layer 12. In an embodiment of the present invention, the aluminum nitride nucleation layer 12 has a thickness T of 20nm to 200nm, as shown in fig. 1. In the present embodiment, the thickness T of the aluminum nitride nucleation layer 12 is preferably 20nm to 50nm, thereby adjusting the epitaxial stress; on the other hand, if the thickness T of the AlN nucleation layer 12 is too thick, cracks may be generated, resulting in defects in the manufactured semiconductor product. In the embodiment of the present invention, the silicon substrate 10 is a silicon-containing substrate, and the material thereof may be, for example, silicon carbide (SiC) or silicon (Si).
In an embodiment of the present invention, the surface 122 of the aluminum nitride nucleation layer 12 has a surface roughness of less than or equal to 0.4 nm; it is preferably less than or equal to 0.3 nm. In an embodiment of the present invention, the full width at half maximum (FWHM) of the peak of the X-ray diffraction rocking curve of the aluminum nitride nucleation layer 12 is less than or equal to 4000 arc seconds (arc sec); it is preferably 900 to 3000 arc seconds.
Referring next to fig. 2 and 3, a substrate 1 is positioned in a reaction environment 2. In fig. 2, a substrate 1 is mounted on a rotatable stage 40. Fig. 3 is a flowchart of a method for manufacturing the substrate 1 according to the first embodiment of the present invention.
In the first embodiment of the present invention, the method of manufacturing the substrate 1 includes at least the steps of:
step 302, providing a reaction environment 2;
step 304, placing the silicon substrate 10 in the reaction environment 2; and
step 306, an aluminum nitride nucleation layer 12 is formed on the silicon substrate 10.
Step 306 includes providing a growth temperature and a growth pressure in the reaction environment 2 to form the aluminum nitride nucleation layer 12 on the silicon substrate 10. In the first embodiment of the present invention, the aluminum nitride nucleation layer 12 is formed on the silicon substrate 10 at a growth temperature of 950 ℃ to 1000 ℃ and a growth pressure of 80torr to 90 torr.
In the first embodiment of the present invention, when the aluminum nitride nucleation layer 12 is grown to the predetermined thickness T, the aluminum nitride nucleation layer 12 is cooled to the predetermined temperature at a temperature of 10 ℃/min to 20 ℃/min. When the reaction environment 2 is cooled at a temperature of 10 ℃/min to 20 ℃/min, the aluminum nitride nucleation layer 12 may have a lower surface roughness and a better lattice structure, so as to avoid slip lines (slip lines) from being generated in the aluminum nitride nucleation layer 12, which is helpful for improving the epitaxy quality of the subsequent epitaxial layer, and further improving the performance of the device.
In the first embodiment of the present invention, the silicon substrate 10 is heated to the growth temperature at a heating rate greater than or equal to 40 ℃/min; the heating rate is preferably 40 ℃/min to 60 ℃/min to avoid the substrate 1 from generating defects and reduce the production cost. In particular, if the temperature increase rate is greater than 60 ℃/min, significant thermal stress is generated in the silicon substrate 10, resulting in slip lines in the aluminum nitride nucleation layer 12. On the other hand, if the temperature increase rate is less than 40 ℃/min, although slip lines are not generated in the aluminum nitride nucleation layer 12, the temperature increase rate is too slow, which results in too long a production time of the substrate 1 and excessive production costs.
As shown in fig. 2, the silicon substrate 10 is disposed on a stage 40, and the stage 40 is driven to rotate in the reaction environment 2. In the first embodiment of the present invention, the rotation speed of the silicon substrate 10 is 300rpm to 400 rpm. When the rotation speed of the silicon substrate 10 is greater than 400rpm, the aluminum nitride nucleation layer 12 is subjected to an excessive centrifugal force, so that the substrate 1 is defective; when the rotation speed of the silicon substrate 10 is less than 300rpm, the aluminum nitride nucleation layer 12 is not well formed and cannot be uniformly dispersed on the surface of the silicon substrate 10.
In the first embodiment of the present invention, when the reaction ambient 2 reaches the growth temperature, a reaction gas (i.e., a first reaction gas as defined herein) is introduced into the reaction ambient 2 to form an aluminum nitride nucleation layer 12 on the silicon substrate 10. In the first embodiment of the present invention, the reaction gas comprises trimethylaluminum (TMAl) and ammonia (NH)3). In the first embodiment of the present invention, the reaction gas stops flowing into the reaction environment 2 when the aluminum nitride nucleation layer 12 grows to a predetermined thickness T. In the first embodiment of the present invention, the predetermined thickness T of the aluminum nitride nucleation layer 12 is 20nm to 200nm, preferably 20nm to 50 nm. In the first embodiment of the present invention, when the aluminum nitride nucleation layer 12 is grown to a predetermined thickness T and the reaction environment 2 is cooled to a predetermined temperature, the rotation speed of the silicon substrate 10 and the aluminum nitride nucleation layer 12 is reduced to stop rotating, wherein the predetermined temperature is 350 ℃ to 700 ℃. In the first embodiment of the present invention, during the cooling process to the predetermined temperature, the rotation speed of the silicon substrate 10 may be reduced to less than half of the original rotation speed (300rpm to 400rpm), for example, the rotation speed of the silicon substrate 10 may be reduced to 150rpm to 200rpm before the temperature is reduced to three-quarters of the growth temperature. In addition, the rotation speed of the silicon substrate 10 may be reduced in multiple stages during the process of reducing the temperature to the predetermined temperature.
By the method for manufacturing the substrate 1 according to the first embodiment of the present invention, the aluminum nitride nucleation layer 12 of the substrate 1 has a lattice-matched lattice structure, and the detection result of the X-ray diffraction rocking curve (omega mode) and the Scanning Electron Microscope (SEM) can determine that the aluminum nitride nucleation layer 12 of the substrate 1 according to the first embodiment of the present invention has no slip lines and has a well-matched lattice structure. In the embodiment of the present invention, by adjusting the process parameters of the aluminum nitride nucleation layer 12, it can be determined whether there is a slip line generated on the aluminum nitride nucleation layer 12; in other words, the process parameters of the aluminum nitride nucleation layer 12 directly influence the occurrence probability of slip lines. If the manufacturing method provided by the embodiment of the invention is not used, the manufactured aluminum nitride nucleation layer has at least 10% of probability of generating slip lines; on the contrary, as shown in the present trial data, if the manufacturing method provided by the embodiment of the invention is used, the slip line is not generated at all in the manufactured aluminum nitride nucleation layer 12.
Referring to fig. 4 and 5, the substrate 3 further includes a semiconductor epitaxial layer 20; in the second embodiment of the present invention, the semiconductor epitaxial layer 20 is a gallium nitride epitaxial layer. Fig. 5 is a flowchart of a method for manufacturing the substrate 3 according to a second embodiment of the present invention.
In the second embodiment of the present invention, the method for manufacturing the substrate 3 has steps 302 to 306 substantially the same as those of the first embodiment, and further comprises the following step 308:
step 302, providing a reaction environment 2;
step 304, placing the silicon substrate 10 in the reaction environment 2;
step 306, forming an aluminum nitride nucleation layer 12 on the silicon substrate 10; and
in step 308, an epitaxial layer 20 of gallium nitride is formed on the nucleation layer 12 of aluminum nitride.
In step 308, a first temperature is provided and the silicon substrate 10 is rotated in the reaction environment 2 at a first rotation speed to form the epitaxial layer 20 of gallium nitride on the nucleation layer 12 of aluminum nitride. In the second embodiment of the present invention, the first temperature is 600 ℃ to 1200 ℃ and the first rotation speed is 800rpm to 1300 rpm.
In the second embodiment of the present invention, when the gan epitaxial layer 20 grows to a predetermined thickness, the substrate 3 on which the gan epitaxial layer 20 is formed is rotated to a second rotation speed and cooled to a second temperature. In a second embodiment of the present invention, the second rotation speed is less than or equal to one-half of the first rotation speed, and the second temperature is less than or equal to one-half of the first temperature. In the second embodiment of the present invention, during the process of cooling to the predetermined temperature, the substrate 3 is rotated to the second rotation speed, wherein the second rotation speed is less than or equal to one-half of the first rotation speed. In the second embodiment of the present invention, during the process of decreasing the temperature to the predetermined temperature, the substrate 3 is decreased to the second rotation speed before the temperature is decreased to the second temperature, wherein the second temperature is more than three-fourths of the first temperature. In the process of lowering the temperature to the predetermined temperature, the rotation speed of the silicon substrate 10 is lowered in multiple stages.
When the reaction environment 2 reaches the first temperature, a reaction gas (i.e., a second reaction gas defined in the present invention) is introduced into the reaction environment 2 to form a gallium nitride epitaxial layer 20 on the aluminum nitride nucleation layer 12. In the second embodiment of the present invention, the reaction gas comprises trimethyl gallium (TMGa) and ammonia (NH)3). In the second embodiment of the present invention, when the gan epitaxial layer 20 grows to a predetermined thickness, the reaction gas stops flowing into the reaction environment 2. In the second embodiment of the present invention, when the substrate 3 on which the gan epitaxial layer 20 is formed is cooled to a predetermined temperature, the rotation speed of the substrate 3 is reduced to stop rotating. In a second embodiment of the present invention, the predetermined temperature is 500 ℃ to 1000 ℃.
In the second embodiment of the present invention, when the gan epitaxial layer 20 grows to a predetermined thickness, the gan epitaxial layer 20 is cooled to a predetermined temperature under the condition of 10 ℃/min to 20 ℃/min to obtain the substrate 3. When the reaction environment 2 is cooled at a temperature of 10 ℃/min to 20 ℃/min, the gan epitaxial layer 20 may have a preferred lattice structure and a preferred lattice matching property, so as to avoid slip lines (slip lines) from being generated in the gan epitaxial layer 20, which is helpful for improving the overall quality of the substrate 3, and further improving the performance of the device.
Because the aluminum nitride nucleation layer of the substrate does not have slip lines and the surface roughness of the aluminum nitride nucleation layer is low, when an epitaxial layer of other semiconductor materials (such as gallium nitride) is formed on the surface of the aluminum nitride nucleation layer in the subsequent process, the epitaxial quality of the epitaxial layer can be obviously improved, and further the efficiency of the semiconductor element is improved.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications to the present invention as described and claimed should be included in the scope of the present invention.
Description of the reference numerals
[ invention ]
1. 3 base plate
10 silicon substrate
12 aluminum nitride nucleation layer
122 surface T thickness
20 epitaxial layer of gallium nitride
2 reaction Environment
40 carrying platform
302. 304, 306 and 308

Claims (15)

1. A substrate having an aluminum nitride nucleation layer, comprising:
a silicon substrate; and
an aluminum nitride nucleation layer disposed on the silicon substrate;
wherein the thickness of the aluminum nitride nucleation layer is 20nm to 200 nm; the surface roughness of the aluminum nitride nucleating layer is less than or equal to 0.4 nm; the half-height width system of the wave peak of the X-ray diffraction rocking curve of the aluminum nitride nucleating layer is less than or equal to 4000 arc seconds; there are no slip lines in the aluminum nitride nucleation layer.
2. The substrate with an aluminum nitride nucleation layer according to claim 1, wherein the aluminum nitride nucleation layer has a thickness of 20nm to 50 nm.
3. The substrate with an aluminum nitride nucleation layer according to claim 1, wherein the surface roughness of the aluminum nitride nucleation layer is less than or equal to 0.3 nm.
4. The substrate with the aluminum nitride nucleation layer of claim 3, wherein the half-height width of the peak of the X-ray diffraction rocking curve of the aluminum nitride nucleation layer is 900 to 3000 arc seconds.
5. A method of fabricating a substrate having an aluminum nitride nucleation layer, comprising:
providing a reaction environment;
placing a silicon substrate in the reaction environment; and
providing a growth temperature and a growth pressure in the reaction environment; introducing a reaction gas to form an aluminum nitride nucleation layer on the silicon substrate;
wherein the growth temperature is 950 ℃ to 1000 ℃, and the growth pressure is 80torr to 90 torr;
when the aluminum nitride nucleation layer grows to a preset thickness, stopping introducing the reaction gas into the reaction environment;
and cooling to a preset temperature under the condition of cooling at 10-20 ℃/min to obtain the substrate with the aluminum nitride nucleation layer.
6. The method of claim 5, wherein the silicon substrate is heated to the growth temperature at a heating rate of greater than or equal to 40 ℃/min; the heating rate is 40 ℃/min to 60 ℃/min.
7. The method of claim 5, wherein the silicon substrate is driven to rotate in the reaction environment at a speed of 300rpm to 400 rpm.
8. The method of claim 7, wherein the silicon substrate is spun down to stop rotating when the temperature is reduced to the predetermined temperature, wherein the predetermined temperature is 350 ℃ to 700 ℃.
9. The method of claim 8, wherein the rotation speed of the silicon substrate is reduced before the temperature is reduced to three-quarters of the growth temperature during the cooling to the predetermined temperature.
10. A method of fabricating a substrate having an aluminum nitride nucleation layer, comprising:
providing a reaction environment;
placing a silicon substrate in the reaction environment;
providing a growth temperature and a growth pressure in the reaction environment; introducing a first reaction gas to form an aluminum nitride nucleation layer on the silicon substrate;
wherein the growth temperature is 950 ℃ to 1000 ℃, and the growth pressure is 80torr to 90 torr;
when the aluminum nitride nucleation layer grows to a first preset thickness, stopping introducing the first reaction gas into the reaction environment; and
providing a first temperature in the reaction environment, and introducing a second reaction gas to form a gallium nitride epitaxial layer on the aluminum nitride nucleation layer, wherein the first temperature is 600 ℃ to 1200 ℃;
when the gallium nitride epitaxial layer grows to a second preset thickness, stopping introducing the second reaction gas into the reaction environment;
and cooling to a preset temperature under the condition of cooling at 10-20 ℃/min to obtain the substrate with the aluminum nitride nucleation layer.
11. The method of claim 10, wherein the silicon substrate and the aluminum nitride nucleation layer are rotated at a first rotation speed in the reaction environment, wherein the first rotation speed is 800rpm to 1300 rpm; in the process of reducing the temperature to the preset temperature, the substrate with the aluminum nitride nucleation layer is reduced to a second rotating speed, wherein the second rotating speed is less than or equal to one half of the first rotating speed.
12. The method of claim 11, wherein the substrate with the aluminum nitride nucleation layer is rotated to the second rotation speed before the temperature is reduced to a second temperature, wherein the second temperature is more than three-quarters of the first temperature.
13. The method of claim 11, wherein the silicon substrate is rotated at multiple stages during the cooling to the predetermined temperature.
14. The method of fabricating a substrate having an aluminum nitride nucleation layer according to claim 10, wherein the predetermined temperature is 500 ℃ to 1000 ℃.
15. The method of claim 10, wherein the silicon substrate is heated to the growth temperature at a heating rate of greater than or equal to 40 ℃/min; the heating rate is 40 ℃/min to 60 ℃/min.
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