CN112098908A - High-precision wide-range three-axis magnetic linear sensor - Google Patents

High-precision wide-range three-axis magnetic linear sensor Download PDF

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Publication number
CN112098908A
CN112098908A CN202011092610.0A CN202011092610A CN112098908A CN 112098908 A CN112098908 A CN 112098908A CN 202011092610 A CN202011092610 A CN 202011092610A CN 112098908 A CN112098908 A CN 112098908A
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Prior art keywords
magnetic field
axis
sensor
directions
signals
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CN202011092610.0A
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Chinese (zh)
Inventor
黄黎
蒋乐跃
储莉玲
金羊华
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Meixin Semiconductor Tianjin Co ltd
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Meixin Semiconductor Tianjin Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Abstract

The present invention provides a three-axis magnetic linear sensor, comprising: the 3-axis anisotropic magneto-resistance sensor senses external magnetic fields in three directions to generate a first group of signals, wherein the first group of signals comprises three sensing signals respectively representing magnetic field components in the three directions; a 3-axis hall sensor which senses magnetic fields in three directions to generate a second set of signals, the second set of signals including three sensing signals respectively representing magnetic field components in the three directions; and the signal processing circuit is electrically connected with the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and selects a sensing signal representing the magnetic field component in the direction in the first group of signals or a sensing signal representing the magnetic field component in the direction in the second group of signals as a final measuring signal representing the magnetic field component in the direction based on the measuring range threshold value in each direction. Compared with the prior art, the invention not only can realize high-precision and wide-range measurement, but also can reduce the volume and the cost.

Description

High-precision wide-range three-axis magnetic linear sensor
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of magnetic field sensors, in particular to a high-precision wide-range three-axis magnetic linear sensor.
[ background of the invention ]
At present, the principle and technology for the triaxial magnetic sensor chip are more, such as Hall (Hall) effect, magnetoresistance effect, fluxgate, giant magneto-impedance (GMI), and the like. Among them, magnetoresistance is mainly classified into three types: anisotropic Magnetoresistance (AMR), Giant Magnetoresistance (GMR), and Tunneling Magnetoresistance (TMR). Sensor chips based on the technologies are long, for example, the Hall sensor has a large measuring range and low sensitivity, and when a magnetic field to be measured is small, a signal is low, so that the accuracy under a low field is very low; the magneto-resistance, flux gate and giant magneto-impedance sensors have high sensitivity and high precision, but the measuring range is smaller. If the magnetic field to be measured requires high-precision measurement and has a large range of measurement range, the commonly used single sensor chip cannot meet the requirement at the same time, and at least two independent chips are required to be combined and respectively carried out, so that the problems of high cost, large size and the like are caused. A three-axis magnetic sensor chip which can satisfy both high accuracy and a wide range is lacking.
Therefore, it is necessary to provide a technical solution and a device to solve the above problems.
[ summary of the invention ]
One of the objects of the present invention is to provide a high-precision wide-range three-axis magnetic linear sensor which can not only realize high-precision and wide-range measurement at the same time, but also reduce the volume and cost.
According to one aspect of the present invention, there is provided a three-axis magnetic linear transducer comprising: a 3-axis anisotropic magnetoresistive sensor that senses external magnetic fields in three directions orthogonal to each other to generate a first set of signals including three sense signals respectively representing magnetic field components in the three directions; a 3-axis hall sensor which senses the magnetic fields in the three mutually orthogonal directions to generate a second set of signals, the second set of signals including three sensing signals respectively representing magnetic field components in the three directions; and the signal processing circuit is electrically connected with the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and selects a sensing signal representing the magnetic field component of the direction in the first group of signals or a sensing signal representing the magnetic field component of the direction in the second group of signals as a final measuring signal representing the magnetic field component of the direction based on the measuring range threshold value in each direction of the three directions.
Compared with the prior art, the AMR sensor and the Hall sensor are combined, the high precision of the AMR sensor can be exerted, the large measuring range of the Hall sensor can be included, the high-precision and large-measuring-range measurement can be realized, and the volume and the cost can be reduced.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
FIG. 1 is a schematic longitudinal cross-sectional view of a high-precision, wide-range, three-axis magnetic linear transducer in accordance with an embodiment of the present invention;
FIG. 2 is a schematic output flow diagram of the three-axis magnetic linear sensor shown in FIG. 1 according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.
Reference is now made to fig. 1, which is a schematic longitudinal sectional view of a high-precision, large-scale, three-axis linear magnetic sensor, in accordance with an embodiment of the present invention. The high-precision wide-range three-axis magnetic linear sensor shown in fig. 1 includes a 3-axis Hall (Hall) sensor, a 3-axis AMR (anisotropic magnetoresistive) sensor, and a signal processing circuit formed on the basis of the same silicon substrate (or semiconductor substrate) 101. For ease of description, a Cartesian coordinate system is defined in FIG. 1, wherein the x-axis extends from left to right, the z-axis extends from bottom to top, the y-axis extends into the page away from the viewer, and the z-axis and the x-and y-axes satisfy the right-hand rule.
The 3-axis AMR sensor generates a first set of signals of magnetic vectors (i.e., magnetic induction) based on sensed external magnetic fields (or magnetic fields) in three mutually orthogonal directions, the first set of signals including three sensed signals respectively representing magnetic field components in the three mutually orthogonal directions. For example, the 3-axis AMR sensor generates a first set of signals based on sensed x-, y-, and z-axis magnetic field components, the first set of signals including a sense signal H representing the x-axis magnetic field component1xSense signal H representing the magnetic field component of the y-axis1yAnd a sense signal H representing a magnetic field component of the z-axis1z. The 3-axis AMR sensor is used for measuring a low-range magnetic field.
The 3-axis hall sensor generates a second set of signals of magnetic vectors (i.e., magnetic induction) based on sensed external magnetic fields in three mutually orthogonal directions (i.e., three-axis magnetic fields), the second set of signals including three sensing signals respectively representing magnetic field components in the three mutually orthogonal directions. For example, the 3-axis Hall sensor generates a second set of signals based on the sensed x-, y-, and z-axis magnetic field components, the second set of signals including a sense signal H representing the x-axis magnetic field component2xSense signal H representing the magnetic field component of the y-axis2yAnd a sense signal H representing a magnetic field component of the z-axis2z. The 3-axis Hall sensor is used for measuring a middle-high range magnetic field.
The signal processing circuit is electrically connected with the 3-axis hall sensor and the 3-axis AMR sensor, and selects a sensing signal representing a magnetic field component of the direction in the first group of signals or a sensing signal representing the magnetic field component of the direction in the second group of signals as a final measurement signal representing the magnetic field component of the direction based on a range threshold set in each of the three directions (e.g., the x-axis, the y-axis, and the z-axis).
The 3-axis hall sensor and the signal processing circuit are disposed on the first structural layer 102, the 3-axis AMR sensor is disposed on the second structural layer 104, and the first structural layer 102 and the second structural layer 104 are stacked on the silicon substrate 101. Wherein a first structural layer 102 provided with the 3-axis hall sensor and a signal processing circuit is located on the substrate 101; the second structural layer 104 on which the 3-axis AMR sensor is disposed is located above the first structural layer 101, and the signal processing circuit and the 3-axis AMR sensor are electrically connected by a via metal (not shown). The structural layers 102 and 104 are composed of multiple semiconductor process layers for realizing a certain function, and are a complete functional structural layer, not a single layer. In one embodiment, the substrate 101 may be monocrystalline silicon in a standard CMOS process; the 3-axis hall sensor and signal processing circuitry in the first structural layer 102 are fabricated on a single crystal silicon substrate 101 using standard CMOS processes.
In the embodiment shown in fig. 1, the high-precision wide-range three-axis magnetic linear sensor further comprises an isolation layer 103 and a third structural layer 105. Wherein the isolation layer 103 is located between the first structural layer 102 and the second structural layer 104; the third structural layer 105 is located above the second structural layer 104. The isolation layer 103 is provided with a through hole (not shown) penetrating the thickness thereof, and a via metal (not shown) penetrates the through hole (or the via metal penetrates the isolation layer) to electrically connect the 3-axis AMR sensor and the signal processing circuit. The isolation layer 103 may be made of silicon nitride, silicon dioxide, or the like, and the via metal may be Al, Cu, or the like. The roughness of the top surface of the isolation layer 103 is small enough to be planarized by chemical mechanical polishing or the like to reduce the roughness. The third structural layer 105 includes a 3-axis AMR sensor protection layer and an electrode thereon, the electrode is connected to the signal processing circuit through a via metal, and an output signal of the signal processing circuit is transmitted to the electrode of the third structural layer 105 through the via metal.
The three-axis magnetic linear sensor shown in fig. 1 is completely integrated by a single chip, and the final packaging body adopts wafer level packaging or plastic packaging.
The 3-axis hall sensors disposed in the first structural layer 102 may be composed of two groups of orthogonal vertical hall sensors and one group of horizontal hall sensors, where the vertical hall sensors include at least two groups or other even groups of vertical hall devices; the horizontal Hall sensor comprises at least one group of horizontal Hall devices. Wherein two sets of orthogonal configuration vertical hall sensors are used to measure the magnetic field component H parallel to the single chip plane (or single chip surface) as shown in fig. 1xAnd HyAnd output to the signal processing circuit. The horizontal hall sensor is used to measure a magnetic field component H perpendicular to the single-chip plane (or single-chip surface) shown in fig. 1zAnd output to the signal processing circuit.
The 3-axis AMR sensor disposed in the second structural layer 104 adopts three sets of Wheatstone bridge structures to sense the magnetic field components H in three orthogonal directionsx、HyAnd Hz. In one embodiment, the 3-axis AMR sensor can be composed of two sets of orthogonally configured Wheatstone bridges for measuring a magnetic field component H parallel to the single-chip plane (or single-chip surface) shown in FIG. 1 and one set of Wheatstone bridges for inducing a magnetic field with a flux transformation direction (which can be referred to as a third set of Wheatstone bridges)xAnd Hy(ii) a A set of Wheatstone bridges with magnetic flux transformation induced magnetic field direction for measuring magnetic field component H perpendicular to single chip plane (or single chip surface) as shown in FIG. 1zThe measurement is carried out by converting a magnetic field component Hz into Hx or Hy through magnetic flux by a specific structure. In another embodiment, the 3-axis AMR sensor can also be used in which the magnetic field components in two directions are measured in a coupled manner and calculated by a circuit to obtain a specific value, and the magnetic field in the remaining direction is measured separately.
Fig. 2 is a schematic diagram illustrating an output flow of the three-axis magnetic linear sensor shown in fig. 1 according to an embodiment of the present invention, which includes the following steps.
Step 210,Magnetic field input Hx，Hy，Hz. I.e. applying a magnetic field (or external magnetic field) H to be measured, the magnetic field components of which on the x-axis, y-axis and z-axis are respectively Hx、HyAnd Hz。
Step 220, the 3-axis AMR sensor is based on the sensed magnetic field component Hx、HyAnd HzGenerating a first set of signals H1x、H1yAnd H1z。
Step 230, the 3-axis Hall sensor based on the sensed magnetic field component Hx、HyAnd HzGenerating a second set of signals H2x、H2yAnd H2z。
Step 240, the first group signal H1x、H1y、H1zAnd a second set of signals H2x、H2yAnd H2zSimultaneously outputting and storing the signals to a signal processing circuit, and outputting a second group of signals H by the signal processing circuit2x、H2y、H2zAnd a preset range threshold value Hx0，Hy0And Hz0A comparison is made. Wherein, the range threshold value H in the x directionx0Y-direction range threshold Hy0And a range threshold H in the z directionz0Can be set equal or unequal, and the range threshold value Hx0，Hy0And Hz0Can be adjusted by a burning program. Looking at the second set of signals H2x、H2y、H2zAnd a range threshold value Hx0，Hy0And Hz0The comparison result of (1). For a magnetic field in the x-direction, if H2x≤Hx0Then H is finally outputx＝H1xI.e. selecting the sense signal H representing the magnetic field component in the x-direction in the first set of signals1xAs a final measurement signal representative of the x-direction magnetic field component; if H is2x>Hx0Then H isx＝H2xI.e. selecting the sense signal H of the second set of signals representing the magnetic field component in the x-direction2xAs a final measurement signal representing the x-direction magnetic field component. For a magnetic field in the y-direction, if H2y≤Hy0Then H is finally outputy＝H1yI.e. selecting the firstSense signal H representing a y-direction magnetic field component in the group signal1yAs a final measurement signal representative of the y-direction magnetic field component; if H is2y>Hy0Then H isy＝H2yI.e. selecting the sense signal H of the second set of signals representing the y-direction magnetic field component2yAs a final measurement signal representing the y-direction magnetic field component. For a magnetic field in the z direction, if H2z≤Hz0Then H is finally outputz＝H1zI.e. selecting the sense signal H representing the z-direction magnetic field component in the first set of signals1zAs a final measurement signal representative of the z-direction magnetic field component; if H is2z>Hz0Then H isz＝H2zI.e. selecting the sense signal H representing the z-direction magnetic field component in the second set of signals2zAs a final measurement signal representing the z-direction magnetic field component.
In one embodiment, the range threshold Hx0，Hy0And Hz0Can be set according to the measuring ranges and the precision of the 3-axis AMR sensor and the 3-axis Hall sensor, and the error of the 3-axis Hall sensor is larger under a small magnetic field, so the measuring range threshold value Hx0，Hy0And Hz0Is selected such that the accuracy of the 3-axis hall sensor is within the required range and cannot exceed the maximum range of the 3-axis AMR sensor.
In summary, the high-precision wide-range three-axis magnetic linear sensor disclosed by the invention combines the 3-axis AMR sensor and the 3-axis Hall sensor, so that the high precision of the AMR sensor can be exerted, and the wide range of the Hall sensor can be covered. The invention integrates the two chips, realizes high precision and wide range of the three-axis magnetic linear sensing chip, improves the measuring precision and reduces the volume and the cost.
In the present invention, the terms "connected", "connecting", and the like mean electrical connections, and direct or indirect electrical connections unless otherwise specified.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.

Claims (12)

1. A three-axis magnetic linear transducer, comprising:
a 3-axis anisotropic magnetoresistive sensor that senses external magnetic fields in three directions orthogonal to each other to generate a first set of signals including three sense signals respectively representing magnetic field components in the three directions;
a 3-axis hall sensor which senses the magnetic fields in the three mutually orthogonal directions to generate a second set of signals, the second set of signals including three sensing signals respectively representing magnetic field components in the three directions;
and the signal processing circuit is electrically connected with the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and selects a sensing signal representing the magnetic field component of the direction in the first group of signals or a sensing signal representing the magnetic field component of the direction in the second group of signals as a final measuring signal representing the magnetic field component of the direction based on the measuring range threshold value in each direction of the three directions.
2. The three-axis magnetic linear sensor of claim 1,
the signal circuit is configured to:
if the sensing signal of the second group of signals, which represents the magnetic field component in one direction of the three directions, is less than or equal to the measuring range threshold value in the direction, selecting the sensing signal of the first group of signals, which represents the magnetic field component in the direction, as the final measuring signal of the magnetic field component representing the direction;
and if the sensing signal of the second group of signals, which represents the magnetic field component in one direction of the three directions, is larger than the measuring range threshold value in the direction, selecting the sensing signal of the second group of signals, which represents the magnetic field component in the direction, as the final measuring signal of the magnetic field component in the direction.
3. The three-axis magnetic linear sensor of claim 1,
the 3-axis anisotropic magneto-resistance sensor, the 3-axis Hall sensor and the signal processing circuit are integrated in a single chip.
4. The three-axis magnetic linear sensor of claim 1,
the 3-axis anisotropic magneto-resistance sensor is used for measuring a low-range magnetic field;
the 3-axis Hall sensor is used for measuring a middle-high range magnetic field.
5. The three-axis magnetic linear sensor of claim 1,
the signal circuit sets corresponding range threshold values for the three directions;
the range thresholds corresponding to the three directions are equal or unequal; and/or
And the range thresholds corresponding to the three directions are adjusted through a burning program.
6. The tri-axial magnetic linear sensor of claim 3,
the single chip comprises a substrate, and a first structural layer and a second structural layer which are laminated on the substrate,
the 3-axis Hall sensor and the signal processing circuit are arranged in the first structural layer;
the 3-axis anisotropic magneto-resistance sensor is arranged in the second structural layer;
the first structural layer is positioned on the substrate;
the second structural layer is located above the first structural layer.
7. The three-axis magnetic linear sensor of claim 6,
the single chip further comprises an isolation layer and a third structural layer,
the isolating layer is positioned between the first structural layer and the second structural layer, and the via hole metal penetrates through the isolating layer to electrically connect the anisotropic magneto-resistance sensor with the signal processing circuit;
the third structural layer is located above the second structural layer, the third structural layer comprises the 3-axis anisotropic magneto-resistance sensor protection layer and electrodes on the 3-axis anisotropic magneto-resistance sensor protection layer, and the electrodes are connected with the signal processing circuit through via hole metal.
8. The magnetic linear sensor of claim 7,
the 3-axis Hall sensor and the signal processing circuit in the first structural layer are manufactured on the monocrystalline silicon substrate by adopting a standard CMOS (complementary metal oxide semiconductor) process; the isolating layer is composed of silicon nitride and silicon dioxide;
the via hole metal is made of Al and Cu materials;
the isolating layer adopts chemical mechanical polishing to reduce the roughness of the upper surface of the isolating layer;
the anisotropic magneto-resistance sensor is manufactured on the flat isolation layer.
9. The magnetic linear sensor of claim 3,
the 3-axis Hall sensor comprises two groups of orthogonal vertical Hall sensors and one group of horizontal Hall sensors,
the two sets of orthogonal vertical Hall sensors are used for measuring magnetic field components parallel to the surface of the single chip;
the horizontal Hall sensor is used for measuring a magnetic field component perpendicular to the surface of the single chip.
10. The magnetic linear sensor of claim 3,
the 3-axis anisotropic magneto-resistance sensor comprises two groups of Wheatstone bridges with orthogonal configurations and a group of Wheatstone bridges with induced magnetic field directions converted by magnetic flux,
the two sets of wheatstone bridges with orthogonal configurations are used for measuring magnetic field components parallel to the surface of the single chip;
the set of Wheatstone bridges with flux-switching induced magnetic field directions is used to measure a magnetic field component perpendicular to the single-chip surface, which is converted by a specific structure into a magnetic field component parallel to the single-chip surface.
11. The magnetic linear sensor of claim 1,
the range thresholds corresponding to the three directions are set according to the ranges and the accuracies of the 3-axis anisotropic magneto-resistance sensor and the 3-axis Hall sensor; or
The range threshold values corresponding to the three directions are selected so that the precision of the 3-axis Hall sensor is within a required range and cannot exceed the maximum range of the 3-axis anisotropic magnetoresistive sensor.
12. The magnetic linear sensor of claim 1,
the 3-axis anisotropic magnetoresistive sensor is used for coupling measurement of magnetic field components in two directions, and separately measurement of magnetic field components in the remaining directions.
CN202011092610.0A 2020-10-13 2020-10-13 High-precision wide-range three-axis magnetic linear sensor Pending CN112098908A (en)

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Application Number Priority Date Filing Date Title
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