CN112098908A - Three-axis magnetic linear sensor with high precision and large range - Google Patents

Three-axis magnetic linear sensor with high precision and large range Download PDF

Info

Publication number
CN112098908A
CN112098908A CN202011092610.0A CN202011092610A CN112098908A CN 112098908 A CN112098908 A CN 112098908A CN 202011092610 A CN202011092610 A CN 202011092610A CN 112098908 A CN112098908 A CN 112098908A
Authority
CN
China
Prior art keywords
axis
magnetic field
sensor
directions
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011092610.0A
Other languages
Chinese (zh)
Inventor
黄黎
蒋乐跃
储莉玲
金羊华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meixin Semiconductor Tianjin Co ltd
Original Assignee
Meixin Semiconductor Tianjin Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meixin Semiconductor Tianjin Co ltd filed Critical Meixin Semiconductor Tianjin Co ltd
Priority to CN202011092610.0A priority Critical patent/CN112098908A/en
Publication of CN112098908A publication Critical patent/CN112098908A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

本发明提供一种三轴磁线性传感器，其包括：3轴各向异性磁电阻传感器，其感测三个方向的外磁场产生第一组信号，第一组信号包括分别表示三个方向的磁场分量的三个感测信号；3轴霍尔传感器，其感测三个方向的磁场产生第二组信号，第二组信号包括分别表示三个方向的磁场分量的三个感测信号；信号处理电路，其与3轴霍尔传感器和3轴各向异性磁电阻传感器电性连接，信号处理电路基于每个方向上的量程阈值，选择第一组信号中表示该方向的磁场分量的感测信号或第二组信号中表示该方向的磁场分量的感测信号作为表示该方向的磁场分量的终测信号。与现有技术相比，本发明不仅能同时实现高精度且大量程的测量，而且还可以降低体积和成本。

Figure 202011092610

The present invention provides a three-axis magnetic linear sensor, comprising: a three-axis anisotropic magnetoresistive sensor, which senses external magnetic fields in three directions to generate a first group of signals, and the first group of signals includes magnetic fields representing three directions respectively Three sensing signals of components; 3-axis Hall sensor, which senses magnetic fields in three directions to generate a second set of signals, the second set of signals includes three sensing signals representing magnetic field components in three directions respectively; signal processing The circuit is electrically connected with the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and the signal processing circuit selects the sensing signal representing the magnetic field component of the direction in the first group of signals based on the range threshold in each direction Or the sensing signal representing the magnetic field component in the direction in the second group of signals is used as the final measurement signal representing the magnetic field component in the direction. Compared with the prior art, the present invention can not only realize the measurement of high precision and large range at the same time, but also can reduce the volume and cost.

Figure 202011092610

Description

高精度大量程的三轴磁线性传感器Three-axis magnetic linear sensor with high precision and large range

【技术领域】【Technical field】

本发明涉及磁场传感器领域，尤其涉及一种高精度大量程的三轴磁线性传感器。The invention relates to the field of magnetic field sensors, in particular to a three-axis magnetic linear sensor with high precision and large range.

【背景技术】【Background technique】

目前，用于三轴磁传感器芯片的原理技术较多，如霍尔(Hall)效应、磁电阻效应、磁通门、巨磁阻抗(GMI)等。其中磁电阻主要分三类：各向异性磁电阻(AMR)、巨磁电阻(GMR)及隧穿磁电阻(TMR)。基于这些技术的传感器芯片各有所长，如霍尔传感器量程大，但灵敏度小，当待测磁场较小时，信号低，导致低场下的精度很低；磁电阻、磁通门及巨磁阻抗传感器灵敏度大，精度高，但量程也同时变得较小。若待测磁场要求高精度测量同时量程的范围较大，则上述常用的单颗传感器芯片不能同时满足，需要至少两颗独立的芯片组合分别进行，导致成本高，体积大等问题。缺乏一种能同时满足高精度且具有大量程的三轴磁传感器芯片。At present, there are many principles and technologies used for three-axis magnetic sensor chips, such as Hall effect, magnetoresistance effect, fluxgate, giant magnetoresistance (GMI) and so on. Among them, magnetoresistance is mainly divided into three categories: anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR). Sensor chips based on these technologies have their own strengths. For example, the Hall sensor has a large range but low sensitivity. When the magnetic field to be measured is small, the signal is low, resulting in low accuracy under low field; magnetoresistance, fluxgate and giant magnetic The impedance sensor has high sensitivity and high precision, but the range becomes smaller at the same time. If the magnetic field to be measured requires high-precision measurement and a large range, the above-mentioned commonly used single sensor chips cannot meet the requirements at the same time, and at least two independent chip combinations are required to be performed separately, resulting in problems such as high cost and large volume. There is a lack of a three-axis magnetic sensor chip that can satisfy both high precision and large range.

因此，有必要提出一种技术方案和器件来解决上述问题。Therefore, it is necessary to propose a technical solution and device to solve the above problems.

【发明内容】[Content of the invention]

本发明的目的之一在于提供一种高精度大量程的三轴磁线性传感器，其不仅能同时实现高精度且大量程的测量，而且还可以降低体积和成本。One of the objectives of the present invention is to provide a high-precision and large-range three-axis magnetic linear sensor, which can not only achieve high-precision and large-range measurement at the same time, but also reduce volume and cost.

根据本发明的一个方面，本发明提供一种三轴磁线性传感器，其包括：3轴各向异性磁电阻传感器，其感测相互正交的三个方向的外磁场产生第一组信号，所述第一组信号包括分别表示三个方向的磁场分量的三个感测信号；3轴霍尔传感器，其感测所述相互正交的三个方向的磁场产生第二组信号，所述第二组信号包括分别表示三个方向的磁场分量的三个感测信号；信号处理电路，其与所述3轴霍尔传感器和3轴各向异性磁电阻传感器电性连接，所述信号处理电路基于所述三个方向中每个方向上的量程阈值，选择第一组信号中表示该方向的磁场分量的感测信号或第二组信号中表示该方向的磁场分量的感测信号作为表示该方向的磁场分量的终测信号。According to one aspect of the present invention, the present invention provides a three-axis magnetic linear sensor, comprising: a three-axis anisotropic magnetoresistive sensor, which senses external magnetic fields in three mutually orthogonal directions to generate a first set of signals, so The first group of signals includes three sensing signals representing magnetic field components in three directions respectively; a 3-axis Hall sensor, which senses the magnetic fields in the three mutually orthogonal directions to generate a second group of signals, the third The two sets of signals include three sensing signals representing magnetic field components in three directions respectively; a signal processing circuit, which is electrically connected to the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and the signal processing circuit Based on the range threshold value in each of the three directions, the sensing signal representing the magnetic field component in the first group of signals or the sensing signal representing the magnetic field component in the direction in the second group of signals is selected as representing the The final measurement signal of the magnetic field component in the direction.

与现有技术相比，本发明将AMR传感器和Hall传感器相结合，其既能发挥AMR传感器的高精度，又能囊括Hall传感器的大量程，从而不仅能同时实现高精度且大量程的测量，而且还可以降低体积和成本。Compared with the prior art, the present invention combines the AMR sensor and the Hall sensor, which can not only exert the high precision of the AMR sensor, but also include the large range of the Hall sensor, so that not only high precision and large range measurement can be realized at the same time, It can also reduce size and cost.

【附图说明】【Description of drawings】

为了更清楚地说明本发明实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图。其中：In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort. in:

图1为本发明在一个实施例中的高精度大量程的三轴磁线性传感器的纵向剖面示意图；1 is a schematic longitudinal cross-sectional view of a three-axis magnetic linear sensor with high precision and large range in an embodiment of the present invention;

图2为本发明在一个实施例中如图1所示的三轴磁线性传感器的输出流程示意图。FIG. 2 is a schematic diagram of an output flow of the three-axis magnetic linear sensor shown in FIG. 1 in an embodiment of the present invention.

【具体实施方式】【Detailed ways】

为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

此处所称的“一个实施例”或“实施例”是指可包含于本发明至少一个实现方式中的特定特征、结构或特性。在本说明书中不同地方出现的“在一个实施例中”并非均指同一个实施例，也不是单独的或选择性的与其他实施例互相排斥的实施例。除非特别说明，本文中的连接、相连、相接的表示电性连接的词均表示直接或间接电性相连。Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure, or characteristic that may be included in at least one implementation of the present invention. The appearances of "in one embodiment" in various places in this specification are not all referring to the same embodiment, nor are they separate or selectively mutually exclusive from other embodiments. Unless otherwise specified, the terms connected, connected, and connected herein mean electrically connected, all mean direct or indirect electrical connection.

请参考图1所示，其为本发明在一个实施例中的高精度大量程的三轴磁线性传感器的纵向剖面示意图。图1所示的高精度大量程的三轴磁线性传感器包括基于同一硅衬底(或半导体衬底)101形成的3轴霍尔(Hall)传感器、3轴AMR(各向异性磁电阻)传感器和信号处理电路。为了便于描述，在图1中定义笛卡尔坐标系，其中，x轴从左向右延伸，z轴从底向上延伸，y轴远离观察者向页面内延伸，z轴与x轴和y轴满足右手定则。Please refer to FIG. 1 , which is a schematic longitudinal cross-sectional view of a three-axis magnetic linear sensor with high precision and large range in one embodiment of the present invention. The high-precision and large-range three-axis magnetic linear sensor shown in FIG. 1 includes a three-axis Hall sensor and a three-axis AMR (anisotropic magnetoresistance) sensor formed on the same silicon substrate (or semiconductor substrate) 101 and signal processing circuits. For the convenience of description, a Cartesian coordinate system is defined in Figure 1, in which the x-axis extends from left to right, the z-axis extends from the bottom to the top, the y-axis extends away from the viewer and into the page, and the z-axis and the x-axis and the y-axis satisfy Right hand rule.

所述3轴AMR传感器基于感测到的相互正交的三个方向的外磁场(或磁场)产生磁矢量(即磁感应强度)的第一组信号，所述第一组信号包括分别表示相互正交的三个方向的磁场分量的三个感测信号。例如，所述3轴AMR传感器基于感测到的x轴、y轴和z轴的磁场分量产生第一组信号，该第一组信号包括表示x轴的磁场分量的感测信号H1x，表示y轴的磁场分量的感测信号H1y，以及表示z轴的磁场分量的感测信号H1z。所述3轴AMR传感器用于测量低量程磁场。The 3-axis AMR sensor generates a first set of signals of a magnetic vector (ie, a magnetic induction intensity) based on the sensed external magnetic fields (or magnetic fields) in three directions orthogonal to each other, and the first set of signals includes signals that respectively represent mutually positive magnetic fields. The three sensed signals of the magnetic field components in the three directions intersect. For example, the 3-axis AMR sensor generates a first set of signals based on sensed x-, y-, and z-axis magnetic field components, the first set of signals including a sensed signal H 1x representing the x-axis magnetic field component, representing A sensing signal H 1y representing the magnetic field component of the y-axis, and a sensing signal H 1z representing the magnetic field component of the z-axis. The 3-axis AMR sensor is used to measure low-range magnetic fields.

所述3轴霍尔传感器基于感测到的相互正交的三个方向的外磁场(即三轴磁场)产生磁矢量(即磁感应强度)的第二组信号，所述第二组信号包括分别表示相互正交的三个方向的磁场分量的三个感测信号。例如，所述3轴霍尔传感器基于感测到的x轴、y轴和z轴的磁场分量产生第二组信号，该第二组信号包括表示x轴的磁场分量的感测信号H2x，表示y轴的磁场分量的感测信号H2y，以及表示z轴的磁场分量的感测信号H2z。所述3轴霍尔传感器用于测量中高量程磁场。The 3-axis Hall sensor generates a second group of signals of a magnetic vector (that is, a magnetic induction intensity) based on the sensed external magnetic fields (that is, three-axis magnetic fields) in three directions orthogonal to each other, and the second group of signals includes Three sensed signals representing magnetic field components in three directions orthogonal to each other. For example, the 3-axis Hall sensor generates a second set of signals based on the sensed x-, y- and z-axis magnetic field components, the second set of signals including a sensed signal H 2x representing the x-axis magnetic field component, A sensing signal H 2y representing the magnetic field component of the y-axis, and a sensing signal H 2z representing the magnetic field component of the z-axis. The 3-axis Hall sensor is used to measure medium and high range magnetic fields.

所述信号处理电路与所述3轴霍尔传感器和3轴AMR传感器电性连接，所述信号处理电路基于所述三个方向(例如，x轴、y轴和z轴)中的每个方向上设定的量程阈值，选择第一组信号中表示该方向的磁场分量的感测信号或第二组信号中表示该方向的磁场分量的感测信号作为表示该方向的磁场分量的终测信号。The signal processing circuit is electrically connected to the 3-axis Hall sensor and the 3-axis AMR sensor, and the signal processing circuit is based on each of the three directions (eg, the x-axis, the y-axis, and the z-axis) The range threshold set on the upper limit, select the sensing signal representing the magnetic field component in the direction in the first group of signals or the sensing signal representing the magnetic field component in the direction in the second group of signals as the final measurement signal representing the magnetic field component in the direction .

所述3轴霍尔传感器和信号处理电路设置于第一结构层102，所述3轴AMR传感器设置于第二结构层104，且第一结构层102和第二结构层104在所述硅衬底101上层叠设置。其中，设置有所述3轴霍尔传感器和信号处理电路的第一结构层102位于所述衬底101上；设置有所述3轴AMR传感器的第二结构层104位于所述第一结构层101的上方，信号处理电路和3轴AMR传感器通过过孔金属(未图示)电性连接。所述结构层102、104为实现某一功能的多个半导体制程层次组成，为一个完整的功能结构层，非单一的一层。在一个实施例中，所述衬底101可以采用标准CMOS工艺中的单晶硅；所述第一结构层中102中的3轴霍尔传感器与信号处理电路采用标准的CMOS工艺制作于单晶硅衬底101上。The 3-axis Hall sensor and the signal processing circuit are arranged on the first structural layer 102, the 3-axis AMR sensor is arranged on the second structural layer 104, and the first structural layer 102 and the second structural layer 104 are arranged on the silicon lining The bottom 101 is stacked and arranged. Wherein, the first structure layer 102 provided with the 3-axis Hall sensor and the signal processing circuit is located on the substrate 101; the second structure layer 104 provided with the 3-axis AMR sensor is located on the first structure layer Above 101, the signal processing circuit and the 3-axis AMR sensor are electrically connected through via metal (not shown). The structural layers 102 and 104 are composed of multiple semiconductor process layers for realizing a certain function, and are a complete functional structural layer, not a single layer. In one embodiment, the substrate 101 can be made of monocrystalline silicon in a standard CMOS process; the 3-axis Hall sensor and the signal processing circuit in the first structural layer 102 are fabricated from monocrystalline silicon in a standard CMOS process on the silicon substrate 101 .

在图1所示的实施例中，所述高精度大量程的三轴磁线性传感器还包括隔离层103和第三结构层105。其中，所述隔离层103位于第一结构层102和第二结构层104之间；所述第三结构层105位于所述第二结构层104上方。所述隔离层103设置有贯穿其厚度的通孔(未图示)，过孔金属(未图示)穿过所述通孔(或过孔金属穿过隔离层)将3轴AMR传感器和信号处理电路电连接。隔离层103可由氮化硅、二氧化硅等材料组成，过孔金属可以采用Al，Cu等材料。隔离层103的上表面的粗糙度足够小，可以采用化学机械抛光等方法进行平坦化降低粗糙度。第三结构层105包括3轴AMR传感器保护层及其上的电极，电极通过过孔金属与信号处理电路连接，信号处理电路的输出信号经过孔金属传送至所述第三结构层105的电极处。In the embodiment shown in FIG. 1 , the high-precision and large-range three-axis magnetic linear sensor further includes an isolation layer 103 and a third structural layer 105 . The isolation layer 103 is located between the first structure layer 102 and the second structure layer 104 ; the third structure layer 105 is located above the second structure layer 104 . The isolation layer 103 is provided with vias (not shown) through its thickness through which via metal (not shown) passes (or via metal passes through the isolation layer) to connect the 3-axis AMR sensor and signal. The processing circuit is electrically connected. The isolation layer 103 may be composed of materials such as silicon nitride and silicon dioxide, and the via metal may be made of materials such as Al and Cu. The roughness of the upper surface of the isolation layer 103 is sufficiently small, and the roughness can be reduced by planarization by chemical mechanical polishing or other methods. The third structural layer 105 includes a 3-axis AMR sensor protective layer and electrodes thereon. The electrodes are connected to the signal processing circuit through via metal, and the output signal of the signal processing circuit is transmitted to the electrode of the third structural layer 105 through the via metal. .

图1所示的三轴磁线性传感器完全由单芯片集成，最终的封装体采用晶圆级封装，也可采用塑封。The three-axis magnetic linear sensor shown in Figure 1 is completely integrated by a single chip, and the final package is either wafer-level packaging or plastic packaging.

设置于第一结构层102中的3轴霍尔传感器可由两组构型正交的垂直霍尔传感器及一组水平霍尔传感器组成，所述垂直霍尔传感器包括至少两组或其他偶数组垂直霍尔器件；所述水平霍尔传感器包括至少一组水平霍尔器件。其中，两组构型正交的垂直霍尔传感器用于测量平行于图1所示的单芯片平面(或单芯片表面)的磁场分量Hx和Hy，并输出至信号处理电路。水平霍尔传感器用于测量垂直于图1所示的单芯片平面(或单芯片表面)的磁场分量Hz，并输出至信号处理电路。The 3-axis Hall sensors disposed in the first structural layer 102 may be composed of two groups of vertical Hall sensors with orthogonal configurations and one group of horizontal Hall sensors, and the vertical Hall sensors include at least two groups or other even groups of vertical Hall sensors. Hall device; the horizontal Hall sensor includes at least one group of horizontal Hall devices. Among them, two groups of vertical Hall sensors with orthogonal configurations are used to measure the magnetic field components H x and Hy parallel to the single-chip plane (or single-chip surface) shown in FIG. 1 , and output them to the signal processing circuit. The horizontal Hall sensor is used to measure the magnetic field component Hz perpendicular to the single-chip plane (or single-chip surface) shown in Figure 1, and output to the signal processing circuit.

设置于第二结构层104中的3轴AMR传感器采用三组惠斯通电桥结构，来感测相互正交的三个方向的磁场分量Hx、Hy和Hz。在一个实施例中，所述3轴AMR传感器可由两组构型正交的惠斯通电桥及一组感应磁场方向经磁通转化的惠斯通电桥(其可称为第三组惠斯通电桥)组成，其中，两组构型正交的惠斯通电桥用于测量平行于图1所示的单芯片平面(或单芯片表面)的磁场分量Hx和Hy；一组感应磁场方向经磁通转化的惠斯通电桥用于测量垂直于图1所示的单芯片平面(或单芯片表面)的磁场分量Hz，其通过特定结构将磁场分量Hz经磁通转化为Hx或Hy进行测量。在另一个实施例中，所述3轴AMR传感器也可采用将其中两个方向的磁场分量耦合测量并通过电路计算得出具体值，剩下方向的磁场单独测量。The 3-axis AMR sensor disposed in the second structure layer 104 adopts three sets of Wheatstone bridge structures to sense the magnetic field components H x , Hy and H z in three mutually orthogonal directions. In one embodiment, the 3-axis AMR sensor can be composed of two sets of Wheatstone bridges with orthogonal configurations and one set of Wheatstone bridges whose induced magnetic field directions are flux-converted (which can be referred to as a third set of Wheatstone bridges) bridge), wherein, two sets of orthogonal Wheatstone bridges are used to measure the magnetic field components H x and Hy parallel to the single-chip plane (or single-chip surface) shown in Figure 1; a set of induced magnetic field directions The flux-transformed Wheatstone bridge is used to measure the magnetic field component Hz perpendicular to the single-chip plane (or single-chip surface) shown in Figure 1, which is flux-transformed to Hx or Hy through a specific structure Take measurements. In another embodiment, the 3-axis AMR sensor can also measure the magnetic field components in two directions by coupling and calculate the specific value through the circuit, and measure the magnetic field in the remaining directions separately.

请参考图2所示，其为本发明在一个实施例中如图1所示的三轴磁线性传感器的输出流程示意图，其包括如下步骤。Please refer to FIG. 2 , which is a schematic diagram of an output flow of the three-axis magnetic linear sensor shown in FIG. 1 in an embodiment of the present invention, which includes the following steps.

步骤210、磁场输入Hx，Hy，Hz。即施加待测磁场(或外磁场)H，其在x轴、y轴和z轴上的磁场分量分别为Hx、Hy和Hz。Step 210 , input the magnetic field H x , Hy , and H z . That is, the magnetic field (or external magnetic field) H to be measured is applied, and its magnetic field components on the x-axis, y-axis and z-axis are respectively H x , Hy and H z .

步骤220、所述3轴AMR传感器基于感测到的磁场分量Hx、Hy和Hz产生第一组信号H1x、H1y和H1z。Step 220 , the 3-axis AMR sensor generates a first set of signals H 1x , H 1y and H 1z based on the sensed magnetic field components H x , Hy and H z .

步骤230、所述3轴霍尔传感器基于感测到的磁场分量Hx、Hy和Hz产生第二组信号H2x、H2y和H2z。Step 230 , the 3-axis Hall sensor generates a second set of signals H 2x , H 2y and H 2z based on the sensed magnetic field components H x , Hy and H z .

步骤240、将第一组信号H1x、H1y、H1z和第二组信号H2x、H2y和H2z同时输出并存储至信号处理电路，且由所述信号处理电路将第二组信号H2x、H2y、H2z与预先设定的量程阈值Hx0，Hy0和Hz0进行比较。其中，x方向的量程阈值Hx0、y方向的量程阈值Hy0和z方向的量程阈值Hz0可设置为相等，也可以设置为不相等，且该量程阈值Hx0，Hy0和Hz0可通过烧录程序进行调节。查看第二组信号H2x、H2y、H2z与量程阈值Hx0，Hy0和Hz0的比较结果。对于x方向的磁场，若H2x≤Hx0，则最终输出Hx＝H1x，即选择第一组信号中表示x方向的磁场分量的感测信号H1x作为表示x方向磁场分量的终测信号；若H2x>Hx0，则Hx＝H2x，即选择第二组信号中表示x方向的磁场分量的感测信号H2x作为表示x方向磁场分量的终测信号。对于y方向的磁场，若H2y≤Hy0，则最终输出Hy＝H1y，即选择第一组信号中表示y方向的磁场分量的感测信号H1y作为表示y方向磁场分量的终测信号；若H2y>Hy0，则Hy＝H2y，即选择第二组信号中表示y方向的磁场分量的感测信号H2y作为表示y方向磁场分量的终测信号。对于z方向的磁场，若H2z≤Hz0，则最终输出Hz＝H1z，即选择第一组信号中表示z方向的磁场分量的感测信号H1z作为表示z方向磁场分量的终测信号；若H2z>Hz0，则Hz＝H2z，即选择第二组信号中表示z方向的磁场分量的感测信号H2z作为表示z方向磁场分量的终测信号。Step 240: Simultaneously output and store the first group of signals H 1x , H 1y , H 1z and the second group of signals H 2x , H 2y and H 2z to the signal processing circuit, and the second group of signals is processed by the signal processing circuit. H 2x , H 2y , H 2z are compared with preset range thresholds H x0 , H y0 and H z0 . The range threshold H x0 in the x direction, the range threshold H y0 in the y direction and the range threshold H z0 in the z direction can be set to be equal or unequal, and the range thresholds H x0 , H y0 and H z0 can be Adjust by burning program. Look at the comparison of the second set of signals H 2x , H 2y , H 2z with the range thresholds H x0 , H y0 and H z0 . For the magnetic field in the x direction, if H 2x ≤ H x0 , the final output is H x =H 1x , that is, the sensing signal H 1x representing the magnetic field component in the x direction in the first group of signals is selected as the final measurement representing the magnetic field component in the x direction. If H 2x >H x0 , then H x =H 2x , that is, the sensing signal H 2x representing the magnetic field component in the x direction in the second group of signals is selected as the final measurement signal representing the magnetic field component in the x direction. For the magnetic field in the y direction, if H 2y ≤H y0 , the final output is Hy =H 1y , that is, the sensing signal H 1y representing the magnetic field component in the y direction in the first group of signals is selected as the final measurement representing the magnetic field component in the y direction. If H 2y >H y0 , then Hy =H 2y , that is, the sensing signal H 2y representing the magnetic field component in the y direction in the second group of signals is selected as the final measurement signal representing the magnetic field component in the y direction. For the magnetic field in the z direction, if H 2z ≤ H z0 , the final output is H z =H 1z , that is, the sensing signal H 1z representing the magnetic field component in the z direction in the first group of signals is selected as the final measurement representing the magnetic field component in the z direction. If H 2z >H z0 , then H z =H 2z , that is, the sensing signal H 2z representing the magnetic field component in the z direction in the second group of signals is selected as the final measurement signal representing the magnetic field component in the z direction.

在一个实施例中，量程阈值Hx0，Hy0和Hz0可以根据3轴AMR传感器和3轴霍尔传感器的量程和精度进行设置，由于3轴霍尔传感器在小磁场下误差较大，所以量程阈值Hx0，Hy0和Hz0的选定要使得3轴霍尔传感器的精度在所要求的范围内且不能超过3轴AMR传感器的最大量程。In one embodiment, the range thresholds H x0 , H y0 and H z0 can be set according to the range and accuracy of the 3-axis AMR sensor and the 3-axis Hall sensor. Since the 3-axis Hall sensor has a large error in a small magnetic field, so The range thresholds H x0 , H y0 and H z0 are selected so that the accuracy of the 3-axis Hall sensor is within the required range and cannot exceed the maximum range of the 3-axis AMR sensor.

综上所述，本发明中的高精度大量程的三轴磁线性传感器，将3轴AMR传感器和3轴Hall传感器相结合，其既能发挥AMR传感器的高精度，又能囊括Hall传感器的大量程。且本发明将两者进行单芯片的集成同时实现了三轴磁线性传感芯片的高精度和大量程，既能提高测量的精度，还可以降低体积及成本。To sum up, the three-axis magnetic linear sensor with high precision and large range in the present invention combines the three-axis AMR sensor and the three-axis Hall sensor, which can not only exert the high precision of the AMR sensor, but also include a large number of Hall sensors. Procedure. In addition, the present invention integrates the two into a single chip and simultaneously realizes the high precision and large range of the three-axis magnetic linear sensor chip, which can not only improve the measurement accuracy, but also reduce the volume and cost.

在本发明中，“连接”、“相连”、“连”、“接”等表示电性连接的词语，如无特别说明，则表示直接或间接的电性连接。In the present invention, "connected", "connected", "connected", "connected" and other words refer to electrical connection, and unless otherwise specified, refer to direct or indirect electrical connection.

以上所述仅为本发明的较佳实施方式，本发明的保护范围并不以上述实施方式为限，但凡本领域普通技术人员根据本发明揭示内容所作的等效修饰或变化，皆应纳入权利要求书中记载的保护范围内。The above descriptions are only the preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, but any equivalent modifications or changes made by those of ordinary skill in the art according to the disclosure of the present invention shall be included in the rights within the scope of protection stated in the request.

Claims (12)

1. A three-axis magnetic linear transducer, comprising:
a 3-axis anisotropic magnetoresistive sensor that senses external magnetic fields in three directions orthogonal to each other to generate a first set of signals including three sense signals respectively representing magnetic field components in the three directions;
a 3-axis hall sensor which senses the magnetic fields in the three mutually orthogonal directions to generate a second set of signals, the second set of signals including three sensing signals respectively representing magnetic field components in the three directions;
and the signal processing circuit is electrically connected with the 3-axis Hall sensor and the 3-axis anisotropic magnetoresistive sensor, and selects a sensing signal representing the magnetic field component of the direction in the first group of signals or a sensing signal representing the magnetic field component of the direction in the second group of signals as a final measuring signal representing the magnetic field component of the direction based on the measuring range threshold value in each direction of the three directions.
2. The three-axis magnetic linear sensor of claim 1,
the signal circuit is configured to:
if the sensing signal of the second group of signals, which represents the magnetic field component in one direction of the three directions, is less than or equal to the measuring range threshold value in the direction, selecting the sensing signal of the first group of signals, which represents the magnetic field component in the direction, as the final measuring signal of the magnetic field component representing the direction;
and if the sensing signal of the second group of signals, which represents the magnetic field component in one direction of the three directions, is larger than the measuring range threshold value in the direction, selecting the sensing signal of the second group of signals, which represents the magnetic field component in the direction, as the final measuring signal of the magnetic field component in the direction.
3. The three-axis magnetic linear sensor of claim 1,
the 3-axis anisotropic magneto-resistance sensor, the 3-axis Hall sensor and the signal processing circuit are integrated in a single chip.
4. The three-axis magnetic linear sensor of claim 1,
the 3-axis anisotropic magneto-resistance sensor is used for measuring a low-range magnetic field;
the 3-axis Hall sensor is used for measuring a middle-high range magnetic field.
5. The three-axis magnetic linear sensor of claim 1,
the signal circuit sets corresponding range threshold values for the three directions;
the range thresholds corresponding to the three directions are equal or unequal; and/or
And the range thresholds corresponding to the three directions are adjusted through a burning program.
6. The tri-axial magnetic linear sensor of claim 3,
the single chip comprises a substrate, and a first structural layer and a second structural layer which are laminated on the substrate,
the 3-axis Hall sensor and the signal processing circuit are arranged in the first structural layer;
the 3-axis anisotropic magneto-resistance sensor is arranged in the second structural layer;
the first structural layer is positioned on the substrate;
the second structural layer is located above the first structural layer.
7. The three-axis magnetic linear sensor of claim 6,
the single chip further comprises an isolation layer and a third structural layer,
the isolating layer is positioned between the first structural layer and the second structural layer, and the via hole metal penetrates through the isolating layer to electrically connect the anisotropic magneto-resistance sensor with the signal processing circuit;
the third structural layer is located above the second structural layer, the third structural layer comprises the 3-axis anisotropic magneto-resistance sensor protection layer and electrodes on the 3-axis anisotropic magneto-resistance sensor protection layer, and the electrodes are connected with the signal processing circuit through via hole metal.
8. The magnetic linear sensor of claim 7,
the 3-axis Hall sensor and the signal processing circuit in the first structural layer are manufactured on the monocrystalline silicon substrate by adopting a standard CMOS (complementary metal oxide semiconductor) process; the isolating layer is composed of silicon nitride and silicon dioxide;
the via hole metal is made of Al and Cu materials;
the isolating layer adopts chemical mechanical polishing to reduce the roughness of the upper surface of the isolating layer;
the anisotropic magneto-resistance sensor is manufactured on the flat isolation layer.
9. The magnetic linear sensor of claim 3,
the 3-axis Hall sensor comprises two groups of orthogonal vertical Hall sensors and one group of horizontal Hall sensors,
the two sets of orthogonal vertical Hall sensors are used for measuring magnetic field components parallel to the surface of the single chip;
the horizontal Hall sensor is used for measuring a magnetic field component perpendicular to the surface of the single chip.
10. The magnetic linear sensor of claim 3,
the 3-axis anisotropic magneto-resistance sensor comprises two groups of Wheatstone bridges with orthogonal configurations and a group of Wheatstone bridges with induced magnetic field directions converted by magnetic flux,
the two sets of wheatstone bridges with orthogonal configurations are used for measuring magnetic field components parallel to the surface of the single chip;
the set of Wheatstone bridges with flux-switching induced magnetic field directions is used to measure a magnetic field component perpendicular to the single-chip surface, which is converted by a specific structure into a magnetic field component parallel to the single-chip surface.
11. The magnetic linear sensor of claim 1,
the range thresholds corresponding to the three directions are set according to the ranges and the accuracies of the 3-axis anisotropic magneto-resistance sensor and the 3-axis Hall sensor; or
The range threshold values corresponding to the three directions are selected so that the precision of the 3-axis Hall sensor is within a required range and cannot exceed the maximum range of the 3-axis anisotropic magnetoresistive sensor.
12. The magnetic linear sensor of claim 1,
the 3-axis anisotropic magnetoresistive sensor is used for coupling measurement of magnetic field components in two directions, and separately measurement of magnetic field components in the remaining directions.
CN202011092610.0A 2020-10-13 2020-10-13 Three-axis magnetic linear sensor with high precision and large range Pending CN112098908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011092610.0A CN112098908A (en) 2020-10-13 2020-10-13 Three-axis magnetic linear sensor with high precision and large range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011092610.0A CN112098908A (en) 2020-10-13 2020-10-13 Three-axis magnetic linear sensor with high precision and large range

Publications (1)

Publication Number Publication Date
CN112098908A true CN112098908A (en) 2020-12-18

Family

ID=73784184

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011092610.0A Pending CN112098908A (en) 2020-10-13 2020-10-13 Three-axis magnetic linear sensor with high precision and large range

Country Status (1)

Country Link
CN (1) CN112098908A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118151065A (en) * 2024-03-12 2024-06-07 国网江苏省电力有限公司电力科学研究院 An adaptive non-contact magnetic field monitoring device and method based on multi-layer magnetic nanofilm

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101937063A (en) * 2010-08-11 2011-01-05 上海腾怡半导体有限公司 Magnetic field sensor
CN102918413A (en) * 2010-03-31 2013-02-06 艾沃思宾技术公司 Process integration of a single chip three axis magnetic field sensor
CN103134967A (en) * 2011-10-25 2013-06-05 霍尼韦尔国际公司 High current range magnetoresistive current sensor
CN103454602A (en) * 2013-09-11 2013-12-18 北京大学 Magnetic field measuring meter based on topological insulator and magnetic field measuring method
CN105259519A (en) * 2014-07-10 2016-01-20 英飞凌科技股份有限公司 Magnetic field sensor device
CN107195655A (en) * 2016-03-15 2017-09-22 德克萨斯仪器股份有限公司 With Hall effect and anisotropic magnetoresistive（AMR）The integrated circuit of sensor
US20170336230A1 (en) * 2016-05-17 2017-11-23 Infineon Technologies Ag Magnetic field sensor and magnetic field sensing method
CN208689155U (en) * 2018-06-22 2019-04-02 钱正洪 Triaxial magnetic field sensor
CN214174595U (en) * 2020-10-13 2021-09-10 美新半导体(天津)有限公司 High-precision wide-range three-axis magnetic linear sensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102918413A (en) * 2010-03-31 2013-02-06 艾沃思宾技术公司 Process integration of a single chip three axis magnetic field sensor
CN101937063A (en) * 2010-08-11 2011-01-05 上海腾怡半导体有限公司 Magnetic field sensor
CN103134967A (en) * 2011-10-25 2013-06-05 霍尼韦尔国际公司 High current range magnetoresistive current sensor
CN103454602A (en) * 2013-09-11 2013-12-18 北京大学 Magnetic field measuring meter based on topological insulator and magnetic field measuring method
CN105259519A (en) * 2014-07-10 2016-01-20 英飞凌科技股份有限公司 Magnetic field sensor device
CN107195655A (en) * 2016-03-15 2017-09-22 德克萨斯仪器股份有限公司 With Hall effect and anisotropic magnetoresistive（AMR）The integrated circuit of sensor
US20170336230A1 (en) * 2016-05-17 2017-11-23 Infineon Technologies Ag Magnetic field sensor and magnetic field sensing method
CN208689155U (en) * 2018-06-22 2019-04-02 钱正洪 Triaxial magnetic field sensor
CN214174595U (en) * 2020-10-13 2021-09-10 美新半导体(天津)有限公司 High-precision wide-range three-axis magnetic linear sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118151065A (en) * 2024-03-12 2024-06-07 国网江苏省电力有限公司电力科学研究院 An adaptive non-contact magnetic field monitoring device and method based on multi-layer magnetic nanofilm

Similar Documents

Publication Publication Date Title
EP2682772B1 (en) Individually packaged magnetoresistance angle sensor
US9116198B2 (en) Planar three-axis magnetometer
US9733316B2 (en) Triaxial magnetic field sensor
CN103885005A (en) Magnetic sensing device and magnetic sensing method thereof
JP6438959B2 (en) Single chip Z-axis linear magnetoresistive sensor
TWI513993B (en) 3-axis magnetic field sensor, fabrication method of magnetic sensing structure and magnetic field sensing circuit
JP6525336B2 (en) 3-axis digital compass
CN104635183A (en) Magnetic field sensing method and electronic compass device
US8786278B2 (en) Three-dimensional magnetic field sensor and method of producing same
US20130176022A1 (en) Magnetoresistive sensing device
US20120161756A1 (en) Magnetic field sensor having anisotropic magnetoresisitive elements, with improved arrangement of magnetization elements thereof
JP2014531571A (en) MTJ triaxial magnetic field sensor and its packaging method
CN103885004A (en) A kind of magnetic sensing device and its magnetic induction method, preparation process
CN108919147A (en) A kind of triaxial magnetic field sensor
CN117075008A (en) Multi-axis magnetic field sensors and multi-axis magnetic field sensor chips
CN208689155U (en) Triaxial magnetic field sensor
CN112097800B (en) 360 degree magnetic angle sensor
CN112098908A (en) Three-axis magnetic linear sensor with high precision and large range
CN214174595U (en) High-precision wide-range three-axis magnetic linear sensor
US9778324B2 (en) Yoke configuration to reduce high offset in X-, Y-, and Z-magnetic sensors
US20190293731A1 (en) Magnetic sensor
CN213812329U (en) 360-degree magnetic angle sensor
CN103116142A (en) Magnetic sensor
CN104297705A (en) Novel single-chip-integrated three-axis magnetic sensor
CN112130101A (en) Optimized magnetoresistive sensor and magnetoresistive sensing structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination