CN112097966A - Capacitive silicon carbide high-temperature pressure sensor and preparation method thereof - Google Patents

Capacitive silicon carbide high-temperature pressure sensor and preparation method thereof Download PDF

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Publication number
CN112097966A
CN112097966A CN202010945048.5A CN202010945048A CN112097966A CN 112097966 A CN112097966 A CN 112097966A CN 202010945048 A CN202010945048 A CN 202010945048A CN 112097966 A CN112097966 A CN 112097966A
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silicon carbide
temperature pressure
substrate
pressure sensor
capacitive
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CN112097966B (en
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方续东
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Shaoxing Jingchuan Sensing Technology Co ltd
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Shaoxing Jingchuan Sensing Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor

Abstract

A capacitance type silicon carbide high-temperature pressure sensor and a preparation method thereof are provided, the sensor comprises a plurality of capacitance type silicon carbide high-temperature pressure sensing units which are arranged in an array manner, each capacitance type silicon carbide high-temperature pressure sensing unit comprises a substrate, two sides of the substrate are connected with supporting columns, the middle part of the substrate is connected with a plurality of lower electrodes which are arranged in an array manner, the lower electrodes and a plurality of upper electrodes which are connected on a silicon carbide film and arranged in an array manner are matched to form a plurality of sub-capacitors, two sides of the silicon carbide film are connected with the tops of the supporting columns, the tops of the upper electrodes are connected with upper electrode leads, and a glass; a cavity is formed between the adjacent pillars and the silicon carbide film and the substrate; the upper electrode and the lower electrode are vertically arranged, and the pressure change is reflected by changing the area between the upper electrode and the lower electrode; the preparation method adopts the processes of etching, sputtering, corrosion, bonding and the like, and the invention increases the output signal, improves the signal-to-noise ratio, improves the linearity and improves the working temperature of the pressure sensor.

Description

Capacitive silicon carbide high-temperature pressure sensor and preparation method thereof
Technical Field
The invention belongs to the technical field of pressure sensors, and particularly relates to a capacitive silicon carbide high-temperature pressure sensor and a preparation method thereof.
Background
The pressure sensor is a device or a device which can sense pressure signals and convert the pressure signals into usable electric signals according to a certain rule to output, and is widely applied to the fields of airborne atmospheric data testing systems, aviation atmospheric data check meters, cabin pressure tests, aerospace ground testing systems, high-performance wind tunnels and the like. Meanwhile, in modern advanced fighters, the system is commonly used for realizing the liquid high-pressure control of airfoil surfaces and landing gears, the hydraulic control of automatic systems, the air pressure test of cooling gas of avionic equipment, the blowing pressure measurement of a deicing system, the pressure test of an oil gas inlet end of a standby power supply engine, the pressure measurement of a cabin, the monitoring of an onboard oxygen system and the like, and provides basic data for the control and execution systems of the fighters.
The capacitive pressure sensor is a pressure sensor which utilizes a capacitance sensitive element to convert the measured pressure into electric quantity in a certain relation with the measured pressure and output the electric quantity, and has the main advantages of low input energy, quick dynamic response and good environmental adaptability. In general, a capacitive pressure sensor can be divided into a single capacitive pressure sensor and a differential capacitive pressure sensor according to a polar distance variation type capacitive sensor; when the film is deformed by sensing pressure, the capacitance formed between the film and the fixed electrode of the two capacitive pressure sensors is changed, and an electric signal in a certain relation with the voltage can be output through the measuring circuit, so that the measured pressure is obtained. The single-capacitor pressure sensor is relatively simple to prepare, but the pressure detection range is limited, and when the pressure is changed, the distance between the upper electrode and the lower electrode is changed, so that the nonlinearity is obvious according to a parallel plate capacitance formula, and the single-capacitor pressure sensor is difficult to be applied to large-range pressure detection. The pressed diaphragm electrode of the differential capacitance type pressure sensor is positioned between the two fixed electrodes to form two capacitors; under the action of pressure, the capacity of one capacitor is increased while the other is correspondingly decreased, and the measurement result is output by a differential circuit. Meanwhile, both of these pressure sensors use silicon as their thin film structure, and thus are difficult to use under high temperature conditions.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a capacitive silicon carbide high-temperature pressure sensor and a preparation method thereof, which can increase output signals and improve the signal-to-noise ratio; meanwhile, the linearity is improved; the operating temperature of the pressure sensor is increased.
In order to achieve the purpose, the invention adopts the technical scheme that:
a capacitance type silicon carbide high-temperature pressure sensor comprises a plurality of capacitance type silicon carbide high-temperature pressure sensing units 100 which are arranged in an array mode, wherein each capacitance type silicon carbide high-temperature pressure sensing unit 100 comprises a substrate 6, supporting columns 8 are connected to two sides of the substrate 6, a plurality of lower electrodes 5 which are arranged in an array mode are connected to the middle of the substrate 6, the lower electrodes 5 and a plurality of upper electrodes 3 which are connected to a silicon carbide film 4 and arranged in an array mode are matched to form a plurality of sub-capacitors, two sides of the silicon carbide film 4 are connected to the tops of the supporting columns 8, the tops of the upper electrodes 3 are connected with an upper electrode lead 2, and a glass cover plate 1 is arranged above; the capacitive silicon carbide high-temperature pressure sensor is divided into a plurality of capacitive silicon carbide high-temperature pressure sensing units 100 through the struts 8, and a cavity 7 is formed between adjacent struts 8, the silicon carbide thin film 4 and the substrate 6;
the upper electrode 3 and the lower electrode 5 are vertically arranged, and the pressure change is reflected by changing the area between the upper electrode 3 and the lower electrode 5.
The upper electrode 3 and the corresponding lower electrode 5 form a flat capacitive pressure sensing unit 9, signals generated by the upper electrode 3 in the capacitive silicon carbide high-temperature pressure sensing units 100 are output in parallel by the upper electrode lead 2, and signals generated by the lower electrode 5 are output in parallel by the substrate 6.
The length of the cavity 7 area is 10-200 μm, and the width is 10-200 μm.
The height of the support pillar 8 is 1-10 μm, and the width is 5-10 μm.
The thickness of the silicon carbide film 4 is 0.5-4 μm.
The upper electrode lead 2 is a Ni electrode.
The substrate 6 is low-resistance silicon carbide, and the resistivity is lower than 0.01 omega cm.
A preparation method of a capacitive silicon carbide high-temperature pressure sensor comprises the following steps:
step 1, taking silicon carbide as a substrate, and cleaning to form a silicon carbide substrate;
step 2, etching the upper surface of the silicon carbide substrate to form a plurality of initial cavities and initial pillars;
step 3, carrying out secondary etching on the upper surface of the silicon carbide substrate to form a secondary cavity, a support and a lower electrode;
step 4, sputtering Si on the upper surface of the structure obtained in the step 33N4And forming a sacrificial layer structure after chemical mechanical polishing;
step 5, etching the upper surface of the structure obtained in the step 4 to form an upper electrode cavity;
step 6, after gluing and photoetching the upper surface of the structure obtained in the step 5, sputtering low-resistance polysilicon, and removing the glue to form an upper electrode;
step 7, sputtering SiC on the upper surface of the structure obtained in the step 6, and forming a silicon carbide film after chemical mechanical polishing;
8, removing the sacrificial layer structure in the structure obtained in the step 7 by adopting wet etching to form a cavity of the capacitive silicon carbide high-temperature pressure unit;
step 9, sputtering metal Ni on the upper surface of the structure obtained in the step 8 to form an upper electrode lead;
and 10, bonding an upper glass cover plate on the upper surface of the structure obtained in the step 9.
Compared with the traditional capacitance type pressure sensor, the invention at least has the following beneficial technical effects:
1) the arrangement positions of the upper electrode and the lower electrode of the capacitive pressure sensor are changed from being parallel to the deformation direction of the film to being perpendicular to the deformation direction of the film, so that the original measurement mode of reflecting the pressure change by changing the distance between the upper electrode and the lower electrode is changed into the measurement mode of reflecting the pressure change by changing the area between the upper electrode and the lower electrode, and according to a parallel plate capacitance formula, the arrangement method can improve the linearity of the capacitance change quantity and further improve the linearity of the pressure sensor;
2) the capacitive silicon carbide high-temperature pressure sensor is provided with a plurality of capacitive silicon carbide high-temperature pressure sensing units, signals of all the units are output in parallel through the upper electrode lead and the substrate, and compared with the original single capacitive pressure sensor, the capacitive silicon carbide high-temperature pressure sensor has the advantages that the output signal is increased, and the signal-to-noise ratio is increased;
3) the silicon carbide film is adopted to replace a silicon film as a pressure bearing film, so that the working temperature of the pressure sensor is improved.
Drawings
FIG. 1 is a top view of a plurality of capacitive silicon carbide high temperature pressure cells in accordance with the present invention.
Fig. 2 is a half-sectional view of a capacitive silicon carbide high temperature pressure cell of the present invention.
Fig. 3 is a schematic diagram of the working principle of the capacitive silicon carbide high-temperature pressure cell according to the present invention.
FIG. 4 is a flow chart of the preparation method of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
In the description of the embodiments, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the embodiments and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
Referring to fig. 1 and 2, a capacitive silicon carbide high temperature pressure sensor comprises a plurality of capacitive silicon carbide high temperature pressure sensing units 100 arranged in an array, each capacitive silicon carbide high temperature pressure sensing unit 100 comprises a substrate 6, support pillars 8 are connected to two sides of the substrate 6, a plurality of lower electrodes 5 arranged in an array are connected to the middle of the substrate 6, the lower electrodes 5 and a plurality of upper electrodes 3 connected to a silicon carbide film 4 and arranged in an array are matched to form a plurality of sub-capacitors, two sides of the silicon carbide film 4 are connected to the tops of the support pillars 8, the tops of the upper electrodes 3 are connected to an upper electrode lead 2, and a glass cover plate 1 is arranged above the upper electrode lead 2; the capacitance type silicon carbide high-temperature pressure sensor is divided into a plurality of capacitance type silicon carbide high-temperature pressure sensing units 100 through the support columns 8, and a cavity 7 is formed between the adjacent support columns 8, the silicon carbide thin film 4 and the substrate 6.
Referring to fig. 3, the upper electrode 3 and the corresponding lower electrode 5 form a plate capacitance pressure sensing unit 9, signals generated by the upper electrode 3 in the plurality of capacitance type silicon carbide high temperature pressure sensing units 100 are output in parallel by the upper electrode lead 2, and signals generated by the lower electrode 5 are output in parallel by the substrate 6.
The length of the cavity 7 area is 10-200 μm, and the width is 10-200 μm.
The height of the support pillar 8 is 1-10 μm, and the width is 5-10 μm.
The thickness of the silicon carbide film 4 is 0.5-4 μm.
The upper electrode lead 2 is a Ni electrode.
The substrate 6 is low-resistance silicon carbide, and the resistivity is lower than 0.01 omega cm.
With reference to fig. 3, in operation, a pressure is introduced into the glass cover plate 1, when a pressure P prevails0When the pressure sensor acts on the silicon carbide film 4 and changes, the silicon carbide film 4 is bent and deformed, and then the upper electrode 3 is led to move upwards or downwards to generate a deformation amount dx, so that the dead area of the flat capacitor pressure sensing unit 9 is changed, and a pressure change value can be obtained by detecting the change amount of the capacitor. The upper and lower electrodes of the traditional capacitive pressure sensor are horizontally arranged, namely parallel to the film and the substrate. When pressure acts on the film, the film belt leads the upper electrode to move upwards or downwards, so that the distance between the upper electrode and the lower electrode is changed, and according to a parallel plate capacitor formula, the distance and the capacitance of the parallel plate capacitor are in an inverse relation, namely a nonlinear relation, so that the electrode arrangement mode can reduce the linearity of the pressure sensor and reduce the pressure measurement range of the sensor. The electrodes are vertically arranged, so that the original measuring mode of reflecting pressure change by changing the distance between the upper electrode and the lower electrode is changed into the measuring mode of reflecting pressure change by changing the area between the upper electrode and the lower electrode, the linearity of the pressure sensor is improved, and the pressure linear measuring range of the sensor is also enlarged. Meanwhile, the silicon carbide thin film 4 is resistant to high temperatureThe pressure bearing film can further improve the working temperature of the pressure sensor and ensure that the sensor can still work normally under high-temperature severe environment. Because the sensor comprises a plurality of capacitance type silicon carbide high-temperature pressure sensing units 100, compared with the original single capacitance type pressure sensor, the sensor has larger output signal, and further the signal-to-noise ratio of the sensor is improved.
Referring to fig. 4, a method for manufacturing a capacitive silicon carbide high-temperature pressure sensor includes the following steps:
step 1, selecting a low-resistance silicon carbide substrate: taking an n-type (100) crystal face double-sided polished silicon carbide wafer as a substrate, using the silicon carbide wafer as a lower electrode and a lower electrode lead, wherein the resistivity of the silicon carbide wafer is less than 0.01 omega cm, and removing a surface oxide layer by wet rinsing to form a silicon carbide substrate 61;
step 2, dry etching: after gluing and developing, carrying out dry etching on the upper surface of the silicon carbide substrate 61 obtained in the step 1 by adopting a plasma etching process to form a plurality of initial cavities 71 and initial pillars 81;
step 3, secondary dry etching: after gluing and developing, performing secondary etching on the upper surface of the structure obtained in the step 2 by adopting a plasma etching process to form a secondary cavity 72, a pillar 8 and a lower electrode 5;
step 4, sputtering Si3N4: sputtering Si on the upper surface of the structure obtained in the step 33N4Removing excessive Si by Chemical Mechanical Polishing (CMP) process3N4Material, the remaining portion forming the sacrificial layer structure 10;
step 5, dry etching Si3N4: after gluing and developing, forming an upper electrode cavity 31 on the upper surface of the structure obtained in the step 4 by adopting a plasma etching process;
step 6, sputtering low-resistance polysilicon: after gluing and photoetching are carried out on the upper surface of the structure obtained in the step 5, low-resistance polycrystalline silicon is sputtered, and an upper electrode 3 is formed after the glue is removed;
step 7, sputtering SiC: sputtering SiC on the upper surface of the structure obtained in the step 6, removing redundant SiC materials by adopting a Chemical Mechanical Polishing (CMP) process, and forming a silicon carbide film 4 on the rest part;
step 8, wet etching Si3N4: etching Si by wet method3N4Removing the sacrificial layer structure 10 in the structure obtained in the step 7 to form a cavity 7 of the capacitance type silicon carbide high-temperature pressure unit 100;
step 9, sputtering an upper electrode: sputtering metal Ni on the upper surface of the structure obtained in the step 8, and patterning to form an upper electrode lead 2;
step 10, anodic bonding: the upper surface of the structure obtained in step 9 was bonded with a glass cover plate 1, and Pyrex glass was used as the glass.
The capacitive silicon carbide high-temperature pressure sensor of the invention has the main technical indexes that:
pressure range: 0MPa to 6 MPa;
full-scale linear correlation coefficient: 0.97;
working temperature: -20 ℃ to 800 ℃;
and (3) measuring precision: 0.01% FS;
response time: less than or equal to 100 ms.
The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations to the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.

Claims (8)

1. A capacitance type silicon carbide high-temperature pressure sensor is characterized in that: the capacitive silicon carbide high-temperature pressure sensing device comprises a plurality of capacitive silicon carbide high-temperature pressure sensing units (100) which are arranged in an array manner, wherein each capacitive silicon carbide high-temperature pressure sensing unit (100) comprises a substrate (6), supporting columns (8) are connected to two sides of the substrate (6), a plurality of lower electrodes (5) which are arranged in an array manner are connected to the middle of the substrate (6), the lower electrodes (5) and a plurality of upper electrodes (3) which are connected to a silicon carbide film (4) and are arranged in an array manner are matched to form a plurality of sub-capacitors, two sides of the silicon carbide film (4) are connected to the tops of the supporting columns (8), the tops of the upper electrodes (3) are connected with an upper electrode lead (2), and a glass cover plate (1); the capacitive silicon carbide high-temperature pressure sensor is divided into a plurality of capacitive silicon carbide high-temperature pressure sensing units (100) through the struts (8), and a cavity (7) is formed between adjacent struts (8) and between the adjacent struts (4) and the substrate (6);
the upper electrode (3) and the lower electrode (5) are vertically arranged, and the pressure change is reflected by changing the area between the upper electrode (3) and the lower electrode (5).
2. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the upper electrodes (3) and the corresponding lower electrodes (5) form a plate capacitance pressure sensing unit (9), signals generated by the upper electrodes (3) in the plurality of capacitance type silicon carbide high-temperature pressure sensing units (100) are output in parallel through the upper electrode lead (2), and signals generated by the lower electrodes (5) are output in parallel through the substrate (6).
3. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the length of the cavity (7) area is 10-200 μm, and the width is 10-200 μm.
4. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the height of the support column (8) is 1-10 μm, and the width is 5-10 μm.
5. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the thickness of the silicon carbide film (4) is 0.5-4 μm.
6. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the upper electrode lead (2) is a Ni electrode.
7. A capacitive silicon carbide high temperature pressure sensor as claimed in claim 1, wherein: the substrate (6) is low-resistance silicon carbide, and the resistivity is lower than 0.01 omega cm.
8. A preparation method of a capacitance type silicon carbide high-temperature pressure sensor is characterized by comprising the following steps:
step 1, taking silicon carbide as a substrate, and cleaning to form a silicon carbide substrate;
step 2, etching the upper surface of the silicon carbide substrate to form a plurality of initial cavities and initial pillars;
step 3, carrying out secondary etching on the upper surface of the silicon carbide substrate to form a secondary cavity, a support and a lower electrode;
step 4, sputtering Si on the upper surface of the structure obtained in the step 33N4And forming a sacrificial layer structure after chemical mechanical polishing;
step 5, etching the upper surface of the structure obtained in the step 4 to form an upper electrode cavity;
step 6, after gluing and photoetching the upper surface of the structure obtained in the step 5, sputtering low-resistance polysilicon, and removing the glue to form an upper electrode;
step 7, sputtering SiC on the upper surface of the structure obtained in the step 6, and forming a silicon carbide film after chemical mechanical polishing;
8, removing the sacrificial layer structure in the structure obtained in the step 7 by adopting wet etching to form a cavity of the capacitive silicon carbide high-temperature pressure unit;
step 9, sputtering metal Ni on the upper surface of the structure obtained in the step 8 to form an upper electrode lead;
and 10, bonding an upper glass cover plate on the upper surface of the structure obtained in the step 9.
CN202010945048.5A 2020-09-10 2020-09-10 Capacitive silicon carbide high-temperature pressure sensor and preparation method thereof Active CN112097966B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114279599A (en) * 2021-12-27 2022-04-05 北京京东方技术开发有限公司 Flexible pressure sensor, flexible pressure strain sensing assembly and pressure detection method

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