CN112097951A - Photothermal reflection micro thermal imaging device and drift correction method - Google Patents
Photothermal reflection micro thermal imaging device and drift correction method Download PDFInfo
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- CN112097951A CN112097951A CN202010872383.7A CN202010872383A CN112097951A CN 112097951 A CN112097951 A CN 112097951A CN 202010872383 A CN202010872383 A CN 202010872383A CN 112097951 A CN112097951 A CN 112097951A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
- G02B21/361—Optical details, e.g. image relay to the camera or image sensor
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
- G02B21/365—Control or image processing arrangements for digital or video microscopes
Abstract
The invention is suitable for the image processing field and the microscopic imaging field, and provides a photothermal reflection microscopic thermal imaging device and a drift correction method, wherein the device comprises: adding a light adjusting sheet and a light adjusting device on the primary light heat reflection micro thermal imaging device; the adjusting sheet is arranged between the scattering sheet and the collimating lens in the primary light heat reflection micro thermal imaging device and is positioned on the focal plane of the collimating lens; the light adjusting device is arranged on the light path of the original light heat reflection micro thermal imaging device and is used for enabling the illumination light modulated by the modulating sheet to be directly imaged on the image surface without passing through the surface of the sample to be measured. Due to the modulation sheet and the light modulation device which are added in the photo-thermal reflection micro-thermal imaging device, the influence of the light source intensity drift and the camera responsivity drift on the error of the collected image can be effectively inhibited, and the temperature measurement of the static target can be realized without modulating the temperature of the measured object.
Description
Technical Field
The invention belongs to the field of image processing and the field of microscopic imaging, and particularly relates to a photothermal reflection microscopic thermal imaging device and a drift correction method.
Background
The photothermal reflection temperature measurement technology is a non-contact temperature measurement technology, and is based on the photothermal reflection phenomenon, which is basically characterized in that the reflectivity of an object changes along with the temperature change of the object. When temperature measurement is performed based on photothermal reflection, the illumination system of the optical microscope is used for providing detection light, a high-performance camera is used for recording microscopic imaging, and the output camera reading is used as a measured value. However, in the temperature measurement process, the detected light intensity changes randomly, and the responsivity of the camera changes accordingly, so that the accuracy of the temperature measurement result is affected.
At present, the main means for dealing with the detection light intensity drift and the responsivity drift of a camera is to modulate the measured temperature so that the temperature changes cyclically between the reference temperature and the temperature to be measured, wherein the temperature change is calculated once every cycle, and the average value of the temperature changes obtained by multiple cycles is used as the final measurement result. Since each cycle takes a relatively short time, the influence of drift can be suppressed to some extent. However, in the above method for suppressing drift, modulation must be applied to the measured object to make the temperature thereof vary cyclically, and the image acquisition of the camera also needs to be controlled synchronously, which makes the operation complicated.
Disclosure of Invention
In view of this, the embodiment of the invention provides a photothermal reflection micro thermal imaging device and a drift correction method, and aims to solve the problems that modulation needs to be applied to a measured object when drift is suppressed and operation is complex in the prior art.
To achieve the above object, a first aspect of embodiments of the present invention provides a photothermal reflection microscopic thermal imaging apparatus comprising: adding a light adjusting sheet and a light adjusting device on the primary light heat reflection micro thermal imaging device;
the adjusting sheet is arranged between the scattering sheet and the collimating lens in the primary light heat reflection micro thermal imaging device and is positioned on the focal plane of the collimating lens;
the light adjusting device is arranged on a light path of the original light heat reflection micro thermal imaging device and is used for enabling the illumination light modulated by the modulating sheet to be directly imaged on an image surface without passing through the surface of a sample to be measured.
As another embodiment of the present application, the dimming device includes: a beam splitter, an attenuation sheet and a mirror;
the beam splitter is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane;
the attenuation sheet and the reflector are respectively arranged on the beam splitter straight-through path, and the attenuation sheet is positioned in front of the reflector.
As another embodiment of the present application, the dimming device includes: a beam splitting cube;
the beam splitting cube is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane.
As another embodiment of the present application, the dimming device includes: a beam splitter and an optical plate;
the beam splitter is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane;
the optical plate is disposed between the beam splitter and the objective lens.
A second aspect of the embodiments of the present invention provides a drift correction method for photothermal reflection micro thermal imaging, where the photothermal reflection micro thermal imaging apparatus according to any of the above embodiments includes:
blocking an objective side optical path, and collecting a first image of a camera sensor at an image surface in the photothermal reflection micro thermal imaging device;
carrying out frequency processing on the first image to obtain a second image;
removing the shielding on the optical path at the side of the objective lens, and collecting a reference image of the measured object at the reference time and an image to be corrected at any time except the reference time;
calculating a correction coefficient according to the second image, the reference image and the image to be corrected;
and correcting all pixels of the image to be corrected according to the correction coefficient to obtain a corrected image.
As another embodiment of the present application, the frequency processing the first image to obtain a second image includes:
and removing direct current components of all pixels in the first image to obtain a second image.
As another embodiment of the present application, the frequency processing the first image to obtain a second image includes:
according to
Obtaining a second image;
wherein h (x, y) represents the second image, L represents the full screen of the image of the measured object collected by the optical path on the side of the shielding objective lens, and N represents the total number of pixels in L.
As another embodiment of the present application, after performing frequency processing on the first image to obtain a second image, the method further includes:
high pass filtering the second image.
As another embodiment of the present application, the calculating a correction coefficient according to the second image, the reference image, and the image to be corrected includes:
according to
Calculating a correction coefficient;
wherein f represents a correction coefficient, cr(x, y) denotes a reference image, cx(x, y) represents an image to be corrected.
As another embodiment of the present application, the modifying all pixels of the image to be modified according to the modification coefficient to obtain a modified image includes:
according to cx'(x,y)＝fcx(x, y) obtaining a corrected image;
wherein, cx' (x, y) denotes the corrected image.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: compared with the prior art, the drift correction method provided by the invention has the advantages that the adjustment sheet and the light adjustment device are additionally arranged in the photothermal reflection microscopic thermal imaging device, the frequency processing is carried out on the first image acquired after the optical path of the objective lens is cut off, so that the reference image and the image to be corrected can be directly acquired, the correction system is calculated, the influence of the light source intensity drift and the camera responsivity drift on the error of the acquired image can be effectively inhibited, the temperature of the measured object is not required to be modulated, and the temperature measurement of the static object can be realized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic view of a photothermal reflection microthermal imaging apparatus provided by an embodiment of the present invention;
FIG. 2 is a schematic view of a photothermal reflection microthermal imaging apparatus according to another embodiment of the present invention;
FIG. 3 is a schematic view of a photothermal reflection microthermal imaging apparatus according to another embodiment of the present invention;
FIG. 4 is a schematic view of a photothermal reflection microthermal imaging apparatus according to another embodiment of the present invention;
fig. 5 is a schematic flow chart of an implementation of a drift correction method for photothermal reflection microscopy thermal imaging according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
An embodiment of the present invention provides a photothermal reflection micro thermal imaging apparatus, as shown in fig. 1, including: a modulation sheet 1 and a light modulation device 2 are added on the original light heat reflection micro thermal imaging device;
the adjusting sheet 1 is arranged between a scattering sheet 3 and a collimating lens 4 in the primary photothermal reflection micro thermal imaging device and is positioned on a focal plane of the collimating lens 4; the modulation sheet 1 applies weak modulation to illumination light emitted from a light source.
The light adjusting device 2 is arranged on the light path of the original light heat reflection micro thermal imaging device and is used for enabling the illumination light modulated by the modulation sheet to be directly imaged on an image surface without passing through the surface of a sample to be measured.
As shown in fig. 1, the primary light-heat reflection micro thermal imaging device adopts an epi-illumination and infinity corrected micro imaging system, which includes a light source 5, a scattering sheet 3, a collimating lens 4, a detection table 6, an object to be detected 7, an objective lens 8, an imaging lens 9 and a camera sensor 10;
the light source 5 is arranged in front of the diffusion sheet 3 and used for emitting illumination light, and the diffusion sheet 3 is used for diffusing the illumination light emitted by the light source 5, so that the illumination uniformity can be improved. Then, the collimated light is collimated by a collimating lens 4 disposed behind the diffuser 3, and the illumination light is irradiated in parallel to form an optical path.
The detection platform 6, the object to be detected 7, the objective lens 8, the imaging lens 9 and the camera sensor 10 form an imaging path which is perpendicular to the optical path, the object to be detected 7 is arranged above the detection platform 6, the objective lens 8 is arranged above the object to be detected 7, the imaging lens is arranged above the objective lens 8, the camera sensor 10 is arranged above the imaging lens 9, and the objective lens 8 and the imaging lens 9 are matched to form an inverted and enlarged image.
Optionally, as shown in fig. 2, in the photothermal reflection micro thermal imaging apparatus provided in this embodiment, the light adjusting device 2 includes: a beam splitter 21, an attenuation sheet 22, and a mirror 23;
the beam splitter 21 is positioned at the intersection point of the optical path and the imaging path of the primary photothermal reflection micro thermal imaging device, and the beam splitter 21 is positioned behind the adjusting sheet 1 and between the objective lens 8 and the imaging lens 9 in the primary photothermal reflection micro thermal imaging device and is obliquely arranged at a preset angle with the horizontal plane;
the attenuation sheet 22 and the reflector 23 are respectively arranged on the beam splitter straight path, and the attenuation sheet 22 is positioned in front of the reflector 23.
Optionally, the preset angle may be set according to an actual imaging requirement, and a value of the preset angle is not limited in this embodiment.
In fig. 2, the role of the attenuation sheet is to adjust the light intensity, too strong will affect the imaging of the sample and the temperature measurement, and too weak will affect the accuracy of the intensity drift correction. The reflector can make the added light path image on the camera sensor at the adjusting sheet positioned on the focal plane of the collimating lens, and the light path does not pass through the surface of the measured object, so that the reflectivity of the measured object is not influenced, the change of the reflectivity of the measured object cannot be caused, and the monitoring intensity drift becomes possible.
As shown in fig. 3, the light modulation device 2 of another photothermal reflection micro thermal imaging device includes: a beam splitting cube 24;
the beam splitting cube 24 is located on the crossing point of former light heat reflection micro-thermal imaging device's light path and formation of image passageway, the beam splitting cube 24 is located adjust slice 1 back between objective 8 and the imaging lens 9 among the former light heat reflection micro-thermal imaging device, and become with the horizontal plane and predetermine angle slope setting.
In this embodiment, the beam splitter 21 is replaced by the beam splitting cube 24, fresnel reflection at the interface between the beam splitting cube 24 and the air can realize the effect that the illumination light is directly imaged on the image plane without passing through the surface of the measured sample, and therefore the reflectivity of the measured object is not affected, and the change of the reflectivity of the measured object is not caused, so that the monitoring of the intensity drift becomes possible.
As shown in fig. 4, the light modulation device 2 of another photothermal reflection micro thermal imaging device includes: a beam splitter 25 and an optical flat 26;
the beam splitter 25 is positioned at the intersection point of the optical path and the imaging path of the primary photothermal reflection micro thermal imaging device, and the beam splitter 25 is positioned behind the adjusting sheet 1 and between the objective lens 8 and the imaging lens 9 in the primary photothermal reflection micro thermal imaging device and is obliquely arranged at a preset angle with the horizontal plane;
the optical plate 26 is arranged between the beam splitter 25 and the objective lens 8.
In the embodiment, the optical flat plate, the beam splitter and the Fresnel reflection of the air interface can realize the effect that the illumination light is directly imaged on the image surface without passing through the surface of the measured sample, so that the reflectivity of the measured object is not influenced, the change of the reflectivity of the measured object is not caused, and the monitoring of the intensity drift becomes possible.
Adopt the little thermal imaging device of light and heat reflection that above-mentioned any embodiment provided, can modulate the temperature of testee through modulation piece and device of adjusting luminance to can effectively restrain the influence of light source intensity drift and camera response coefficient drift to the temperature measurement result, thereby realize the temperature measurement to static target.
Fig. 5 is a schematic flow chart of an implementation process of the drift correction method for photothermal reflection microthermal imaging according to the embodiment of the present invention, and details of the drift correction method for photothermal reflection microthermal imaging using the photothermal reflection microthermal imaging apparatus according to any of the embodiments are as follows.
In this embodiment, the focal plane of the collimating lens where the modulating sheet is located, the object plane where the measured object is located, and the image plane where the camera sensor is located are conjugate planes, and the intensities of the three light fields are respectively denoted as m (x, y), s (x, y), and c (x, y).
m (x, y) is the result of the modulation of the illumination light emitted from the light source by the diffusion sheet and the modulation sheet, and the image projected on the object plane by the collimator lens and the objective lens can be
Wherein f iscIs the focal length of the collimating lens, foIs the focal length of the objective lens,
is the magnification, α, of projection of m (x, y) to s (x, y)1Is the intensity attenuation.
The reflection of the measured object is recorded as r (x, y), and the intensity s (x, y) of the light field after the reflection of the measured object is
s (x, y) is projected on the image surface through the objective lens and the imaging lens to obtain the light field intensity of
Wherein f istIn order to obtain the focal length of the imaging lens,
magnification, α, for projection of s (x, y) to c (x, y)2Is the intensity attenuation.
The other path c (x, y) is projected on the image surface by the collimating lens, the reflecting mirror and the imaging lens to have the light field intensity of
Wherein
Magnification, α, for projection of m (x, y) to c (x, y)3Is the intensity attenuation.
Thus, the intensity of the light field at the image plane
Finishing to obtain:
the first term is the multiplication of the sample by the modulation and the second term is the inversion of the modulation (i.e., centro-symmetric or spatial inversion).
The influence of drift is added by multiplying the coefficient d at m (x, y)sReflecting the drift of the intensity of the light source, multiplying by a coefficient d at c (x, y)cReflect the responsivity drift of the camera, then
Let D be Dsdc；
Considering that D varies randomly with time, c (x, y) and D are both increased by the subscript k, indicating a correspondence between them:
since r (x, y) varies with temperature, it can be further split into r at the reference time0And a subsequent variation component ar.
Structure h (x, y), of
Wherein L is the full picture of the acquired image of the measured object. h (x, y) and Δ rkThe Fourier transforms of (x, y) are denoted as H (u, v) and Δ Rk(u, v), L corresponds to the transform domain range denoted as T, then the above equation is equivalent to
Taking into account Δ rk(x, y) corresponds to temperature variation, the spatial frequency of which should be centered lowThe frequency part, and therefore h (x, y) is designed to have more high frequency components and to remove low frequency components. Therefore, on one hand, the modulation chip should have a large amount of high-frequency components, and on the other hand, the low-frequency components should be removed by performing appropriate processing in constructing h (x, y).
Optionally, the first image in this step may be represented as:
in this step, frequency processing is performed on the first image to obtain a second image, including: and removing direct current components of all pixels in the first image to obtain a second image.
Optionally, can be based on
Obtaining a second image;
wherein h (x, y) represents the second image, L represents the full screen of the image of the measured object collected by the optical path on the side of the shielding objective lens, and N represents the total number of pixels in L.
Optionally, after this step, high-pass filtering may be performed on the second image to filter out low-frequency signals.
In this step, the photothermal reflection microscopic thermal imaging device described in any of the above embodiments is used to collect a reference image and an image to be corrected, where the reference image is recorded as cr(x, y), the image to be corrected is denoted as cx(x,y)。
Optionally, the step can be according to
Calculating a correction coefficient;
wherein f represents a correction coefficient, cr(x, y) denotes a reference diagramImage, cx(x, y) represents an image to be corrected.
Optionally, for the selection of L, a positive image or a predetermined partial image may be selected according to the surface image characteristics of the object to be tested and the difference of m settings, or a region for drift correction may be selected by a user according to the condition of the object to be tested, and the selection principle is that the temperature of the region is kept stable during the testing process, or the material C isTRLow enough so that the measured object reflection r remains substantially stable even with temperature changes.
And 505, correcting all pixels of the image to be corrected according to the correction coefficient to obtain a corrected image.
Optionally, according to cx'(x,y)＝fcx(x, y) obtaining a corrected image; wherein, cx' (x, y) denotes the corrected image.
The drift correction method for the photothermal reflection micro thermal imaging collects a first image of a camera sensor at an image surface in the photothermal reflection micro thermal imaging device by blocking an objective side optical path; carrying out frequency processing on the first image to obtain a second image; removing the shielding on the optical path at the side of the objective lens, and collecting a reference image of the measured object at the reference time and an image to be corrected at any time except the reference time; calculating a correction coefficient according to the second image, the reference image and the image to be corrected; and correcting all pixels of the image to be corrected according to the correction coefficient to obtain a corrected image. By adopting the drift correction method provided by the invention, because the adjustment sheet and the light adjustment device are additionally arranged in the photothermal reflection microscopic thermal imaging device, and the correction system can be directly calculated according to the acquired reference image and the image to be corrected after the frequency processing is carried out on the first image acquired after the optical path of the objective lens is interrupted, the influence of the drift of the light source intensity and the drift of the camera responsivity on the error of the acquired image can be effectively inhibited, and the temperature of the measured object does not need to be modulated in the embodiment, so that the temperature measurement of the static object can be realized.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A photothermal reflection microscopic thermal imaging apparatus, comprising: adding a light adjusting sheet and a light adjusting device on the primary light heat reflection micro thermal imaging device;
the adjusting sheet is arranged between the scattering sheet and the collimating lens in the primary light heat reflection micro thermal imaging device and is positioned on the focal plane of the collimating lens;
the light adjusting device is arranged on a light path of the original light heat reflection micro thermal imaging device and is used for enabling the illumination light modulated by the modulating sheet to be directly imaged on an image surface without passing through the surface of a sample to be measured.
2. The photothermal reflection microthermal imaging device of claim 1 wherein said light modulating means comprises: a beam splitter, an attenuation sheet and a mirror;
the beam splitter is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane;
the attenuation sheet and the reflector are respectively arranged on the beam splitter straight-through path, and the attenuation sheet is positioned in front of the reflector.
3. The photothermal reflection microthermal imaging device of claim 1 wherein said light modulating means comprises: a beam splitting cube;
the beam splitting cube is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane.
4. The photothermal reflection microthermal imaging device of claim 1 wherein said light modulating means comprises: a beam splitter and an optical plate;
the beam splitter is positioned on the intersection point of the light path and the imaging passage of the primary light heat reflection micro thermal imaging device, is positioned behind the modulation sheet and between the objective lens and the imaging lens in the primary light heat reflection micro thermal imaging device, and is obliquely arranged at a preset angle with the horizontal plane;
the optical plate is disposed between the beam splitter and the objective lens.
5. A drift correction method for photothermal reflection microthermal imaging, based on the photothermal reflection microthermal imaging apparatus of any one of claims 1 to 4, comprising:
blocking an objective side optical path, and collecting a first image of a camera sensor at an image surface in the photothermal reflection micro thermal imaging device;
carrying out frequency processing on the first image to obtain a second image;
removing the shielding on the optical path at the side of the objective lens, and collecting a reference image of the measured object at the reference time and an image to be corrected at any time except the reference time;
calculating a correction coefficient according to the second image, the reference image and the image to be corrected;
and correcting all pixels of the image to be corrected according to the correction coefficient to obtain a corrected image.
6. The method of claim 5, wherein the frequency processing the first image to obtain a second image comprises:
and removing direct current components of all pixels in the first image to obtain a second image.
7. The method of claim 6, wherein the frequency processing the first image to obtain a second image comprises:
according to
Obtaining a second image;
wherein h (x, y) represents the second image, L represents the full screen of the image of the measured object collected by the optical path on the side of the shielding objective lens, and N represents the total number of pixels in L.
8. The method of claim 6 or 7, further comprising, after said frequency processing the first image to obtain a second image:
high pass filtering the second image.
9. The drift correction method for photothermal reflection microscopy thermography of claim 8, wherein said calculating a correction factor from said second image, said reference image and said image to be corrected comprises:
according to
Calculating a correction coefficient;
wherein f represents a correction coefficient, cr(x, y) denotes a reference image, cx(x, y) represents an image to be corrected.
10. The drift correction method for photothermal reflection microscopy thermography according to claim 9, wherein said correcting all pixels of said image to be corrected according to said correction factor to obtain a corrected image comprises:
according to cx'(x,y)＝fcx(x, y) obtaining a corrected image;
wherein, cx' (x, y) denotes the corrected image.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006308513A (en) * | 2005-05-02 | 2006-11-09 | Nec Electronics Corp | Inspection device and method |
| CN102564610A (en) * | 2011-12-28 | 2012-07-11 | 哈尔滨工业大学 | Energy method-based high-temperature radiation rate measuring device of semi-transparent material and revising method for deducting background radiation |
| US20130136151A1 (en) * | 2011-11-24 | 2013-05-30 | National Central University | Highly adaptive thermal properties measurement system and measuring method thereof |
| CN107976263A (en) * | 2017-11-16 | 2018-05-01 | 中国电子科技集团公司第十三研究所 | Photothermal reflectance temp measuring method and system |
| CN109813435A (en) * | 2018-12-29 | 2019-05-28 | 中国电子科技集团公司第十三研究所 | Static light reflects microscopic thermal imaging method, device and terminal device |
| CN110310245A (en) * | 2019-07-02 | 2019-10-08 | 中国电子科技集团公司第十三研究所 | Modification method, correcting device and the terminal of image illumination distribution |
-
2020
- 2020-08-26 CN CN202010872383.7A patent/CN112097951B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006308513A (en) * | 2005-05-02 | 2006-11-09 | Nec Electronics Corp | Inspection device and method |
| US20130136151A1 (en) * | 2011-11-24 | 2013-05-30 | National Central University | Highly adaptive thermal properties measurement system and measuring method thereof |
| TW201321744A (en) * | 2011-11-24 | 2013-06-01 | Univ Nat Central | Highly adaptive thermal properties measurement system and measuring method thereof |
| CN102564610A (en) * | 2011-12-28 | 2012-07-11 | 哈尔滨工业大学 | Energy method-based high-temperature radiation rate measuring device of semi-transparent material and revising method for deducting background radiation |
| CN107976263A (en) * | 2017-11-16 | 2018-05-01 | 中国电子科技集团公司第十三研究所 | Photothermal reflectance temp measuring method and system |
| CN109813435A (en) * | 2018-12-29 | 2019-05-28 | 中国电子科技集团公司第十三研究所 | Static light reflects microscopic thermal imaging method, device and terminal device |
| CN110310245A (en) * | 2019-07-02 | 2019-10-08 | 中国电子科技集团公司第十三研究所 | Modification method, correcting device and the terminal of image illumination distribution |
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