CN112091798B - Angle polishing device and wafer surface damage depth measuring method - Google Patents

Angle polishing device and wafer surface damage depth measuring method Download PDF

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Publication number
CN112091798B
CN112091798B CN202011251075.9A CN202011251075A CN112091798B CN 112091798 B CN112091798 B CN 112091798B CN 202011251075 A CN202011251075 A CN 202011251075A CN 112091798 B CN112091798 B CN 112091798B
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Prior art keywords
polishing
wafer
angle
wafer sample
polishing disk
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CN112091798A (en
Inventor
张婉婉
李阳
黄天刚
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Xian Eswin Silicon Wafer Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

The invention relates to an angle polishing device, which comprises a first polishing disk, a second polishing disk and a plurality of fixing structures, wherein the first polishing disk and the second polishing disk are oppositely arranged, and the fixing structures are used for fixing wafer samples; the fixing structure can enable the wafer sample to be arranged obliquely to the fixing surface of the fixing structure at a preset angle; the first polishing disc is provided with a plurality of polishing holes which correspond to the fixing structures one to one, each fixing structure can be inserted into the corresponding polishing hole, and the surface to be polished of the wafer sample is exposed out of the corresponding polishing hole; and the control structure is used for controlling the first polishing disk and the second polishing disk to rotate along opposite directions so as to grind and polish the wafer sample. The invention also relates to a method for measuring the damage depth of the wafer surface.

Description

Angle polishing device and wafer surface damage depth measuring method
Technical Field
The invention relates to the technical field of silicon product manufacturing, in particular to an angle polishing device and a wafer surface damage depth measuring method.
Background
The process of manufacturing semiconductor silicon wafers generally includes: various processes such as growing a silicon ingot, barrel-grinding an ingot, cutting (wire-cutting), Lapping, and Polishing. In order to remove machining damage existing on the wafer surface and the edge region, an etching step is performed after the above-described machining step. For some silicon wafers used in semiconductors, the method for measuring the depth of machining damage present in the surface region of the wafer is in accordance with the method mentioned in international specification (ASTM F95-88), which essentially consists in making a small-angle bevel on the surface of the sample by means of polishing process, exposing the damage layer cracks, and then measuring the depth of the cracks on the surface of the wafer by microscopic means. The angle polishing machine adopted at present can only process a single small sample at each time, but cannot process a plurality of samples simultaneously, and has low processing efficiency and long consumed time.
Disclosure of Invention
In order to solve the technical problems, the invention provides an angle polishing device and a method for measuring the damage depth of a wafer surface, which solve the problem of low polishing efficiency of a wafer sample.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that: an angle polishing device comprises a first polishing disk, a second polishing disk and a plurality of fixing structures, wherein the first polishing disk and the second polishing disk are oppositely arranged, and the fixing structures are used for fixing wafer samples;
the fixing structure can enable the wafer sample to be inclined to the polishing surface of the first polishing disk at a preset angle;
the first polishing disc is provided with a plurality of polishing holes, the polishing holes are arranged in one-to-one correspondence with the fixing structures, and each fixing structure can be inserted into the corresponding polishing hole to enable the surface to be polished of the wafer sample to be exposed out of the corresponding polishing hole;
and the control structure is used for controlling the first polishing disk and the second polishing disk to rotate along opposite directions so as to grind and polish the wafer sample.
Optionally, the fixed knot constructs including cylindricality main part to and detachable connect in the connecting portion of cylindricality main part one end, connecting portion include with the connecting surface that the cylindricality main part is connected, and with the bearing surface that the connecting surface set up relatively, the bearing surface includes that at least one slope is regional in order to be used for bearing the weight of wafer sample, the slope regional with angle between the polishing face of first polishing dish does predetermine the angle.
Optionally, the fixing structure further comprises a bolt, a through hole for the bolt to pass through is arranged on the cylindrical main body part in a penetrating mode along the axial direction of the cylindrical main body part, a groove is formed in the connecting surface of the connecting part, and an internal thread matched with the external thread of the bolt is arranged on the inner wall of the groove.
Optionally, the fixing structure further includes a sleeve sleeved outside the cylindrical main body portion, and an end face of the sleeve near one end of the connecting portion is partially recessed to form a sawtooth structure.
Optionally, the preset angle is 2 to 12 degrees.
Optionally, the polishing apparatus further comprises an abrasive fluid supply structure including a conduit having an outlet directed toward a location between the first polishing disk and the second polishing disk.
The embodiment of the invention provides a method for measuring the damage depth of a wafer surface, which comprises the following steps:
cutting the wafer into a plurality of wafer samples with preset sizes;
polishing the wafer sample by adopting the angle polishing device;
etching the polished wafer sample;
and acquiring the surface appearance of the etched wafer sample, and measuring the surface damage depth of the wafer sample according to the surface appearance.
Optionally, the polishing of the wafer sample by using the angle polishing apparatus specifically includes:
fixing the wafer sample on the fixed structure at the preset angle;
inserting the holding structure into the first polishing disk;
and controlling the first polishing disk and the second polishing disk to rotate in opposite directions so as to polish the wafer sample.
Optionally, the wafer is cut into a plurality of wafer samples with preset sizes, and the method specifically includes the following steps:
annealing the wafer under a preset condition, wherein the preset condition comprises the following steps: the temperature is 1000-;
and cutting the annealed wafer according to a preset size to obtain a plurality of wafer samples.
Optionally, the obtaining of the surface topography of the etched wafer sample, and the measuring of the surface damage depth of the wafer sample according to the surface topography specifically include:
obtaining the surface appearance of the etched wafer sample through a microscope;
and measuring the surface damage depth of the wafer sample according to the surface topography.
The invention has the beneficial effects that: by the angle polishing device in the embodiment of the invention, a plurality of wafer samples can be polished at the same time, and the efficiency is improved.
Drawings
FIG. 1 is a partially exploded perspective view of an angle polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating a wafer sample preparation method according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a wafer sample after polishing in an embodiment of the invention;
FIG. 4 shows a schematic cross-sectional view of FIG. 3;
FIG. 5 shows an exploded view of a fixation structure in an embodiment of the invention;
fig. 6 shows a schematic cross-sectional view of a fixation structure in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, only for the purpose of facilitating description of the present invention and simplifying description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The embodiment provides an angle polishing device, which comprises a first polishing disk 1, a second polishing disk 2 and a plurality of fixing structures 3, wherein the first polishing disk 1 and the second polishing disk 2 are oppositely arranged;
the fixed structure 3 can enable a wafer sample to be arranged obliquely to the polishing surface of the first polishing disk 1 at a preset angle;
a plurality of polishing holes 11 are formed in the first polishing disc 1, the polishing holes 11 are arranged in one-to-one correspondence with the fixing structures 3, and each fixing structure 3 can be inserted into the corresponding polishing hole 11, so that the surface to be polished of the wafer sample is exposed out of the corresponding polishing hole 11;
and the control structure is used for controlling the first polishing disk 1 and the second polishing disk 2 to rotate in opposite directions so as to grind and polish the wafer sample.
The angle polishing apparatus can be used for polishing a plurality of wafer samples simultaneously, a general wafer can be cut into 5 or 9 wafer samples, the specific number can be set according to actual needs, the number of the polishing holes 11 in the first polishing disk 1 determines the number of the wafer samples to be polished simultaneously, in this embodiment, the first polishing disk 1 includes 8 polishing holes 11, but not limited thereto.
In this embodiment, referring to fig. 5 and fig. 6, the fixing structure 3 includes a cylindrical body 31, and a connecting portion 32 detachably connected to one end of the cylindrical body 31, the connecting portion 32 includes a connecting surface 320 connected to the cylindrical body 31, and a carrying surface 322 disposed opposite to the connecting surface 320, the carrying surface 322 includes at least one inclined area 321 for carrying a wafer sample, and an angle between the inclined area 321 and the polishing surface of the first polishing pad 1 is the preset angle (refer to a preset angle α in fig. 6).
The cylindrical main body part 31 is of a solid metal structure, and the axial direction of the cylindrical main body part 31 is kept perpendicular to the polishing surface of the first polishing disc 1 in the grinding process through the self gravity, and meanwhile, the polishing holes 11 also avoid inclination or shaking of the cylindrical main body part 31 in other directions.
The cylindrical main body 31 is freely retractable in a direction perpendicular to the polishing surface of the first polishing disk 1, that is, the cylindrical main body 31 is freely movable in the extending direction of the polishing hole 11, so that during the polishing process, under the action of the gravity of the cylindrical main body 31 itself, the cylindrical main body 31 moves toward the direction close to the second polishing disk 2 along with the polishing of the wafer sample until the polishing is finished, and in this embodiment, the total weight of the fixing structure 3 is about 1Kg, which is enough to ensure that the wafer sample is polished under the action of the gravity.
In the embodiment, the cross section of the connecting portion 32 in the direction perpendicular to the axial direction of the cylindrical body portion 31 is circular, and the inclined region 321 is extended from the center of the connecting portion 32 to the edge to facilitate the grinding of the wafer sample.
In this embodiment, the bearing surface 322 includes a plurality of the inclined areas 321 with central symmetry, the cross section of the connecting portion 32 in the direction parallel to the axial direction of the cylindrical main body portion 31 is triangular, and referring to fig. 6, fig. 6 shows a schematic cross section of the fixing structure 3 in the direction parallel to the axial direction of the cylindrical main body portion 31.
In this embodiment, for example, the fixing structure 3 further includes a bolt 33, a through hole 301 for the bolt 33 to pass through is penetratingly disposed on the cylindrical main body portion 31 along an axial direction thereof, a groove 323 is disposed on the connecting surface 320 of the connecting portion 32, and an inner wall of the groove 323 is provided with an inner thread matching with the outer thread of the bolt 33, referring to fig. 6.
After the wafer sample is fixed on the carrying surface 322, the connecting portion 32 is turned over, and the bolt 33 passes through the through hole 301 and is locked in the groove 323, so as to connect the connecting portion 32 to the cylindrical body portion 31.
In this embodiment, for example, the fixing structure 3 further includes a sleeve 34 disposed outside the cylindrical main body portion 31, and an end surface of the sleeve 34 near one end of the connecting portion 32 is partially recessed to form a sawtooth structure 341.
Sleeve 34 is hollow cylindrical structure, the setting of sleeve 34 is right cylindrical main part 31 with connecting portion 32 plays the guard action, and the effectual grinding in-process of avoiding, cylindrical main part 31 takes place to incline or rocks.
The saw tooth structure 341 is configured to facilitate the entrance of the slurry into the sleeve 34 for polishing the wafer sample 10, referring to fig. 5 and 6.
In this embodiment, for example, the preset angle is 2 to 12 degrees, the setting of the preset angle may be adjusted according to actual needs, and in a specific embodiment, the preset angle may be 2.11 degrees, 5.44 degrees, 11.32 degrees, and the like.
In this embodiment, the angle polishing apparatus further includes an abrasive liquid supply structure including a pipe 4 having an outlet directed to a position between the first polishing disk 1 and the second polishing disk 2.
The number of the conduits 4 may be set according to actual requirements, and in an embodiment of this embodiment, the polishing liquid providing structure includes two conduits 4 respectively disposed on two opposite sides of the first polishing pad 1.
The embodiment of the invention provides a method for measuring the damage depth of a wafer surface, which is used for detecting the damage depth of the wafer surface and comprises the following steps:
cutting the wafer into a plurality of wafer samples with preset sizes;
polishing the wafer sample by adopting the angle polishing device;
etching the polished wafer sample;
and acquiring the surface appearance of the etched wafer sample, and measuring the surface damage depth of the wafer sample according to the surface appearance.
In this embodiment, the polishing with the angle polishing apparatus includes:
fixing the wafer sample on the fixed structure 3 at the preset angle;
inserting said fixed structure 3 into said first polishing disc 1;
and controlling the first polishing disk 1 and the second polishing disk 2 to rotate in opposite directions so as to polish the wafer sample.
In this embodiment, the step of cutting the wafer into a plurality of wafer samples with preset sizes includes the following steps:
annealing the wafer under a preset condition, and amplifying microscopic damage on the surface of the wafer so as to be conveniently displayed, wherein the preset condition comprises the following steps: the temperature is 1000-;
and cutting the annealed wafer according to a preset size to obtain a plurality of wafer samples.
One wafer can be cut into 5 or 9 wafer samples, which can be specifically set according to actual needs, for example, if the wafer is cut into 9 wafers, each wafer sample can be cut into 10mm × 10mm, during cutting, 1 wafer sample can be obtained at the center of the wafer to be cut (the center of the wafer to be cut is taken as the center of the pre-obtained wafer sample for cutting), 4 wafer samples can be obtained at R/2 of the wafer to be cut (the wafer to be cut is taken as the center of the R/2), and 4 wafer samples can be obtained at the edge of the wafer to be cut.
In this embodiment, the wafer sample is fixed on the fixing structure 3 at the predetermined angle.
Specifically, paraffin wax is heated and cured at the temperature of 140-180 ℃, so that a wafer sample is fixed on the bearing surface of the connecting part, then the connecting part fixed with the wafer sample is connected with the cylindrical main body part, and then the fixing structure is inserted into the polishing hole of the first polishing disc;
in this embodiment, the first polishing disk 1 and the second polishing disk 2 are controlled to rotate in opposite directions, so as to polish the wafer sample. The method specifically comprises the following steps: setting the rotation directions of the first polishing disk 1 and the second polishing disk 2 to be opposite, rotating at a speed as fast as possible (e.g. 200 and 500 rpm) to improve the polishing efficiency, and spraying the polishing slurry between the first polishing disk 1 and the second polishing disk 2 to polish a plurality of wafer samples simultaneously, wherein the polishing time is about 40min-80 min.
The wafer sample after the angle polishing needs to be etched to show the damage on the surface of the wafer more obviously, which is exemplarily performed in this embodiment to etch the polished wafer sample. Specifically, after polishing of the wafer sample is finished, the wafer sample is taken down from the fixed structure 3, Wright etching (Latet etching) is carried out, the etching time is 20s-60s, and after the etching is finished, the etched wafer sample is washed clean and dried for later use.
The method comprises the steps of obtaining the surface appearance of an etched wafer sample, and measuring the surface damage depth of the wafer sample according to the surface appearance, and specifically comprises the following steps:
obtaining the surface appearance of the etched wafer sample through a microscope;
and measuring the surface damage depth of the wafer sample according to the surface topography.
In this embodiment, measuring the surface damage depth of the wafer sample according to the surface topography specifically includes:
the damage depth of the wafer surface 100 is obtained by the following formula: l2= L1 × sin α, where the wafer surface 100 has the polishing region 200 thereon, L1 is the preset measurement length of the damaged portion on the polishing region 200, and α is the preset angle, refer to fig. 3 and 4.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (9)

1. The angle polishing device is characterized by comprising a first polishing disk, a second polishing disk and a plurality of fixing structures, wherein the first polishing disk and the second polishing disk are oppositely arranged, and the fixing structures are used for fixing wafer samples;
the fixing structure can enable the wafer sample to be inclined to the polishing surface of the first polishing disk at a preset angle;
the first polishing disc is provided with a plurality of polishing holes, the polishing holes are arranged in one-to-one correspondence with the fixing structures, and each fixing structure can be inserted into the corresponding polishing hole, so that the surface to be polished of the wafer sample is exposed out of the corresponding polishing hole;
the control structure is used for controlling the first polishing disk and the second polishing disk to rotate along opposite directions so as to grind and polish the wafer sample;
the fixing structure comprises a cylindrical main body part and a connecting part detachably connected to one end of the cylindrical main body part, the connecting part comprises a connecting surface connected with the cylindrical main body part and a bearing surface arranged opposite to the connecting surface, the bearing surface comprises at least one inclined area for bearing a wafer sample, and an angle between the inclined area and a polishing surface of the first polishing disk is the preset angle;
the cylindrical main body part can freely stretch and retract in the direction perpendicular to the polishing surface of the first polishing disk, so that in the grinding process, under the action of the gravity of the cylindrical main body part, the cylindrical main body part moves towards the direction close to the second polishing disk along with the grinding of the wafer sample.
2. The angle polishing apparatus according to claim 1, wherein the fixing structure further comprises a bolt, a through hole for the bolt to pass through is formed in the cylindrical main body portion along an axial direction thereof, a groove is formed in a connecting surface of the connecting portion, and an internal thread matched with the external thread of the bolt is formed in an inner wall of the groove.
3. The angle polishing apparatus as claimed in claim 2, wherein the fixing structure further comprises a sleeve fitted around the cylindrical main body portion, and an end surface of the sleeve near one end of the connecting portion is partially recessed to form a saw-tooth structure.
4. The angle polishing apparatus according to claim 1, wherein the predetermined angle is 2 to 12 degrees.
5. The angle polishing apparatus according to claim 1, further comprising an abrasive liquid supply structure including a pipe having an outlet directed toward a position between the first polishing disk and the second polishing disk.
6. A method for measuring the damage depth of a wafer surface is characterized by comprising the following steps:
cutting the wafer into a plurality of wafer samples with preset sizes;
polishing the wafer sample using the angle polishing apparatus of any one of claims 1-5;
etching the polished wafer sample;
and acquiring the surface appearance of the etched wafer sample, and measuring the surface damage depth of the wafer sample according to the surface appearance.
7. The method for measuring the damage depth of the wafer surface according to claim 6, wherein the angle polishing device according to any one of claims 1 to 5 is used for polishing a wafer sample, and the method specifically comprises the following steps:
fixing the wafer sample on the fixed structure at the preset angle;
inserting the holding structure into the first polishing disk;
and controlling the first polishing disk and the second polishing disk to rotate in opposite directions so as to polish the wafer sample.
8. The method as claimed in claim 6, wherein the step of cutting the wafer into a plurality of wafer samples with predetermined dimensions comprises the steps of:
annealing the wafer under a preset condition, wherein the preset condition comprises the following steps: the temperature is 1000-;
and cutting the annealed wafer according to a preset size to obtain a plurality of wafer samples.
9. The method for measuring the surface damage depth of the wafer according to claim 6, wherein the step of obtaining the surface topography of the etched wafer sample and measuring the surface damage depth of the wafer sample according to the surface topography comprises:
obtaining the surface appearance of the etched wafer sample through a microscope;
and measuring the surface damage depth of the wafer sample according to the surface topography.
CN202011251075.9A 2020-11-11 2020-11-11 Angle polishing device and wafer surface damage depth measuring method Active CN112091798B (en)

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JP6394337B2 (en) * 2014-12-04 2018-09-26 株式会社Sumco Adsorption chuck, chamfering polishing apparatus, and silicon wafer chamfering polishing method
CN104842225A (en) * 2015-04-22 2015-08-19 苏州爱彼光电材料有限公司 Wet processing method for large-dimension sapphire substrate surface
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