CN112086365A - 一种提高超细金丝单根丝长度的方法及装置 - Google Patents
一种提高超细金丝单根丝长度的方法及装置 Download PDFInfo
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- CN112086365A CN112086365A CN202010909054.5A CN202010909054A CN112086365A CN 112086365 A CN112086365 A CN 112086365A CN 202010909054 A CN202010909054 A CN 202010909054A CN 112086365 A CN112086365 A CN 112086365A
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- wire
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- gold
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 58
- 230000008569 process Effects 0.000 claims abstract description 33
- 239000010931 gold Substances 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 230000001050 lubricating effect Effects 0.000 claims abstract description 22
- 238000005491 wire drawing Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 4
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 238000005461 lubrication Methods 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009749 continuous casting Methods 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 238000004513 sizing Methods 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 2
- 241001556567 Acanthamoeba polyphaga mimivirus Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal Extraction Processes (AREA)
Abstract
Description
进线尺寸和出线尺寸 | 分段总变形量 | 道次变形量 | 在线热拉拔温度 | 在线热拉拔速度 |
Ф0.0500mm~Ф0.0316mm | 60% | 6%~10% | 400~600℃ | 60m/min~120m/min |
Ф0.0316mm~Ф0.0200mm | 60% | 6%~10% | 400~600℃ | 60m/min~120m/min |
Ф0.0200mm~Ф0.0141mm | 50% | 3%~6% | 400~600℃ | 50m/min~100m/min |
Ф0.0141mm~Ф0.0100mm | 50% | 3%~6% | 300~500℃ | 50m/min~100m/min |
Ф0.0100mm~Ф0.0080mm | 36% | 2%~5% | 300~500℃ | 10m/min~50m/min |
进线尺寸和出线尺寸 | 分段总变形量 | 道次变形量 | 在线热拉拔温度 | 在线热拉拔速度 |
Ф0.0500mm~Ф0.0316mm | 60% | 6%~10% | 400~600℃ | 60m/min~120m/min |
Ф0.0316mm~Ф0.0200mm | 60% | 6%~10% | 400~600℃ | 60m/min~120m/min |
Ф0.0200mm~Ф0.0141mm | 50% | 3%~6% | 400~600℃ | 50m/min~100m/min |
Ф0.0141mm~Ф0.0100mm | 50% | 3%~6% | 300~500℃ | 50m/min~100m/min |
Claims (8)
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CN202010909054.5A CN112086365B (zh) | 2020-09-02 | 2020-09-02 | 一种提高超细金丝单根丝长度的方法及装置 |
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CN202010909054.5A CN112086365B (zh) | 2020-09-02 | 2020-09-02 | 一种提高超细金丝单根丝长度的方法及装置 |
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CN112086365A true CN112086365A (zh) | 2020-12-15 |
CN112086365B CN112086365B (zh) | 2023-04-11 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484623A (en) * | 1987-09-26 | 1989-03-29 | Tanaka Precious Metal Ind | Gold bonding wire for semiconductor |
JP2004344901A (ja) * | 2003-05-20 | 2004-12-09 | Tanaka Electronics Ind Co Ltd | 極細線の伸線方法及び伸線装置 |
JP2008218994A (ja) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | 半導体素子接続用金線 |
CN102121077A (zh) * | 2011-01-21 | 2011-07-13 | 宁波康强电子股份有限公司 | 一种键合金丝及其制备方法 |
CN103122421A (zh) * | 2011-11-21 | 2013-05-29 | 北京达博有色金属焊料有限责任公司 | 一种封装用高性能键合金丝的制备方法 |
CN110586676A (zh) * | 2019-10-29 | 2019-12-20 | 陈永福 | 一种制造镁合金细丝的多道次拉拔工艺方法 |
-
2020
- 2020-09-02 CN CN202010909054.5A patent/CN112086365B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484623A (en) * | 1987-09-26 | 1989-03-29 | Tanaka Precious Metal Ind | Gold bonding wire for semiconductor |
JP2004344901A (ja) * | 2003-05-20 | 2004-12-09 | Tanaka Electronics Ind Co Ltd | 極細線の伸線方法及び伸線装置 |
JP2008218994A (ja) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | 半導体素子接続用金線 |
CN102121077A (zh) * | 2011-01-21 | 2011-07-13 | 宁波康强电子股份有限公司 | 一种键合金丝及其制备方法 |
CN103122421A (zh) * | 2011-11-21 | 2013-05-29 | 北京达博有色金属焊料有限责任公司 | 一种封装用高性能键合金丝的制备方法 |
CN110586676A (zh) * | 2019-10-29 | 2019-12-20 | 陈永福 | 一种制造镁合金细丝的多道次拉拔工艺方法 |
Non-Patent Citations (1)
Title |
---|
范红等: "键合银合金丝的制备", 《黄金》 * |
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CN112086365B (zh) | 2023-04-11 |
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Address after: No. 988, Keji Road, high tech Development Zone, Wuhua District, Kunming, Yunnan 650000 (Kunming Precious Metals Research Institute) Patentee after: Yunnan Precious Metal New Materials Holding Group Co.,Ltd. Country or region after: China Address before: No. 988, Keji Road, high tech Development Zone, Wuhua District, Kunming, Yunnan 650000 (Kunming Precious Metals Research Institute) Patentee before: Sino-Platinum Metals Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240617 Address after: 650000 Kunming High tech Zone Majinpu Precious Metals Industrial Park, Kunming City, Yunnan Province Patentee after: Guiyan Semiconductor Materials (Yunnan) Co.,Ltd. Country or region after: China Address before: No. 988, Keji Road, high tech Development Zone, Wuhua District, Kunming, Yunnan 650000 (Kunming Precious Metals Research Institute) Patentee before: Yunnan Precious Metal New Materials Holding Group Co.,Ltd. Country or region before: China |