CN112071732B - Array type electrostatic deflector capable of being coded, focusing deflection system and design method - Google Patents
Array type electrostatic deflector capable of being coded, focusing deflection system and design method Download PDFInfo
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- CN112071732B CN112071732B CN202010738885.0A CN202010738885A CN112071732B CN 112071732 B CN112071732 B CN 112071732B CN 202010738885 A CN202010738885 A CN 202010738885A CN 112071732 B CN112071732 B CN 112071732B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
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Abstract
The invention discloses a codeable array type electrostatic deflector, a focusing deflection system and a design method, which are formed by installing a plurality of electrostatic deflector subunits along an axial array.
Description
Technical Field
The invention belongs to the field of semiconductor processing, and particularly relates to a codeable array type electrostatic deflector, a focusing deflection system and a design method.
Background
Processing defects inevitably exist in the semiconductor processing process, the defects seriously affect the quality of products, and with the continuous development of scientific technology, higher requirements are put forward on the detection of the defects of the semiconductors. On one hand, as the size of semiconductor devices is continuously reduced, the feature size of defects is also continuously reduced, and meanwhile, the appearance of the multi-layer structure semiconductor manufacturing process and the research and development of new materials and new processes bring new hidden defects, which all put new requirements on the improvement of the resolution of defect detection. On the other hand, as the wafer size increases, the processing and inspection efficiency needs to be improved, and therefore the deflection field needs to be as large as possible. However, as the deflection field increases, the deflection aberration increases in the corner region of the deflection field, severely reducing the detection resolution in the corner region of the deflection field. Therefore, the electron beam on-line defect inspection equipment is required to have high resolution under a large deflection field. The patent document US7759653B2 discloses an electron beam defect detecting system using two modes of operation, one mode being a large deflection field and a large electron beam with high scanning speed and low resolution for identifying the region where the defect is located, and the other mode being a small deflection field and a small electron beam with high resolution for detecting the defect deeply, and switching between the two modes of operation is realized by selecting different deflectors and lens excitation, thereby realizing high-resolution defect detection with a large deflection field. However, the beam spot size becomes large due to the presence of the deflector for a large deflection field, and noise is easily generated due to its high deflection sensitivity, which affects the signal of secondary electrons.
Disclosure of Invention
Aiming at the problem that an electron beam online detection system for detecting sample defects meets the requirements of a large deflection field and high resolution in the current semiconductor manufacturing process, the invention provides a codeable array type electrostatic deflector, a focusing deflection system and a design method.
In order to achieve the purpose, the invention adopts the following technical scheme:
the encodable array type electrostatic deflector comprises an encodable array type electrostatic deflector body, wherein the encodable array type electrostatic deflector body is connected to a controller through a lead, the controller is connected to a driver through a data line, and the encodable array type electrostatic deflector body is composed of a plurality of deflector subunits which are arrayed along the axial direction.
Further, the deflector subunits are integrally processed or are separately processed and then are installed along the axial array.
Further, when the plurality of deflector subunits are integrally processed, the integrated deflector support is firstly processed, then the electrode and the electrode lead of the deflector subunit are installed and fixed on the deflector support, and finally the inner wall of the deflector support provided with the electrode is ground to ensure the coaxiality of all the deflector subunits.
Further, the inner wall of the deflector support is provided with mounting grooves for fixedly mounting electrodes along the axial direction and the circumferential direction, the centers of the mounting grooves are provided with through holes for mounting binding posts along the radial direction, and the binding posts are used for connecting electrode leads.
Furthermore, the electrode is made of sheet metal, and the sheet metal is fixed in the mounting groove in an adhesion mode; or the electrode is formed by coating a conductive silver paste material in the mounting groove and taking the conductive silver paste as the electrode after the conductive silver paste is solidified.
Furthermore, when the plurality of deflector subunits are independently processed and then are arranged along the axial array, each deflector subunit comprises a subunit fixing support and a subunit electrode, each subunit electrode is fixed on the upper side of the inner edge of the corresponding subunit fixing support, adjacent deflector subunits are fixed by a tool clamp, and a space convenient for a subunit electrode lead is reserved on the adjacent deflector subunit paper piece along the axial direction.
The utility model provides a focus deflection system based on array electrostatic deflector that can encode, includes the negative pole, and the lower part of negative pole sets gradually by suppression utmost point, accelerating electrode, condenser, diaphragm, secondary electron collector, deflector and magnetic focusing lens in advance, and the inboard of magnetic focusing lens is provided with array electrostatic deflector that can encode, and array electrostatic deflector body that can encode and magnetic focusing lens coaxial arrangement, suppression utmost point, accelerating electrode, condenser, diaphragm, secondary electron collector, deflector and magnetic focusing lens coaxial arrangement in advance, the lower part of magnetic focusing lens is provided with the sample platform.
A method for designing an array-type electrostatic deflector capable of coding comprises the steps of obtaining a first derivative of an on-axis magnetic field to a z-axis according to the distribution characteristics of the on-axis magnetic field of a magnetic focusing lens, and fitting a plurality of deflector subunits in a magnetic field area along the axial direction, so that a dipolar field function and the first derivative of the magnetic field on the axis of a body of the array-type electrostatic deflector capable of coding meet the condition of a variable optical axis.
Further, firstly, obtaining the on-axis dipolar field discrete value of each deflector subunit through numerical calculation, fitting the on-axis dipolar field discrete value of each deflector subunit into an dipolar field function expression by utilizing Gaussian fitting, and finally, further fitting the dipolar field function on each deflector subunit axis and the first derivative of the magnetic field to the z axis by adopting a least square method to determine the excitation size of each deflector subunit.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the encodable array type electrostatic deflector comprises a plurality of deflector subunits which are arrayed along the axial direction, and the structural dimension and the excitation size of each subunit can be designed and adjusted independently, so that the encodable array type electrostatic deflector can be designed in a focusing deflection system according to the actual position condition of parts of a magnetic field area of a magnetic focusing lens, and the space position of the magnetic field area of the magnetic focusing lens can be effectively utilized to meet the variable-axis condition;
2. for the distribution characteristics of the on-axis magnetic field of a given magnetic focusing lens, by designing the encodable array type electrostatic deflector, firstly, Gaussian fitting is adopted to obtain the on-axis dipolar field function of each deflector subunit, and then, the least square method is utilized to fit the on-axis dipolar field functions of all the deflector subunits with the first derivative of the magnetic field to determine the excitation size of each deflector subunit, so that the variable-axis condition can be met, and the theory of the variable-axis condition shows that the deflection aberration of a deflection focusing system can be reduced, thereby improving the resolution.
Drawings
FIG. 1 is a schematic diagram of an electron beam focusing deflection system including an array of encodable electrostatic deflectors;
FIG. 2 is a schematic diagram of the operation of the encodable array electrostatic deflector;
FIG. 3 is a schematic diagram of a separately fabricated encodable array electrostatic deflector configuration in accordance with one embodiment of the present invention;
FIG. 4 is a schematic diagram of an integrated process encodable array electrostatic deflector configuration in accordance with one embodiment of the present invention;
FIG. 5 is a graph comparing the fitted dipolar field function on the body axis of the encodable array electrostatic deflector with the first derivative of the magnetic field on the axis of the magnetic focusing lens with respect to the z-axis;
FIG. 6 is a comparison of the degree of fit using a progressive fit of different numbers of deflector subunits;
FIG. 7 is a graph of absolute value of aberration coefficient in corner regions of a deflected focusing system calculated by using different numbers of deflector subunits to perform linear fitting;
FIG. 8 is a graph of aberration contrast at corner regions of a deflected focusing system calculated using a linear fit of different numbers of deflector subunits;
fig. 9 is a graph of the resolution of the deflected focusing system in the corner area calculated using a linear fit of different numbers of deflector subunits.
In the figure: 111. a cathode; 112. a suppressor electrode; 113. an accelerator electrode; 120. a condenser lens; 130. a diaphragm; 140. a secondary electron collector; 150. a pre-deflector; 160. an array-type electrostatic deflector body capable of being coded; 170. a magnetic focusing lens; 180. a sample stage; 161. a subunit securing bracket; 162. a subunit electrode; 163. a deflector bracket; 164. mounting grooves; 165. a through hole; 166. a binding post; 1601. a controller; 1602. a driver.
Detailed Description
The present invention will be described in further detail below.
The invention relates to an encodable array type electrostatic deflector, which comprises an encodable array type electrostatic deflector body 160, wherein the encodable array type electrostatic deflector body 160 is connected to a controller 1601 through a lead, the controller 1601 is connected to a driver 1602 through a data line, and the encodable array type electrostatic deflector body 160 consists of a plurality of deflector subunits arranged along the axial direction.
In the composite focusing deflection system, the paraxial trajectory equation when the rotational symmetry field and the deflection field are superposed is as follows:
where w is the paraxial track, η -e/m is the charge-to-mass ratio, -is the amount of electron charge, m is the electron mass, I is the imaginary unit, V is the deflection voltage, I is the deflection current,
is the potential distribution of the axially rotationally symmetric field, B is the magnetic induction intensity distribution of the axially rotationally symmetric field, F1And D1The function of the on-axis dipolar field of the electric deflection field and the function of the on-axis dipolar field of the magnetic deflection field, respectively, with a single apostrophe indicating the first derivative of the variable to the z-axis and a double apostrophe indicating the first derivative of the variable to the z-axis. Assuming that the charged particles have a straight trajectory before entering the composite focus deflection zone, that is:
w(z)＝k(z-zo)+wo,(zo≤z≤zi)
wherein z isoIs the object plane position, ziAs image plane position, k is the slope of the trajectory, woFor entering the position of the variable axis region, z represents the z-axis, w (z) represents the paraxial trajectory as a function of the z-coordinate, and within the compound focus deflection region, for a magneto-focus electric deflection system, the variable axis conditions are:
i.e. the on-axis dipole field function of the electrostatic deflector has to be related to the first derivative of the magnetic induction on the magnetic lens axis.
Based on this, the invention discloses a structure of an array type electrostatic deflector meeting the variable axis condition, wherein the body 160 of the array type electrostatic deflector is composed of deflector subunits which are arrayed along the axial direction.
The codeable array type electrostatic deflector can be formed by adopting a single deflector subunit to be processed and installed independently and then arranged along an axial array, the deflector subunit comprises a subunit fixing support 161 and subunit electrodes 162, the subunit fixing support and the subunit electrodes are fixed in an adhesion mode, all deflector subunits are assembled and fixed along the axial array by adopting a special tool clamp so as to ensure the coaxiality of all deflector subunits, and a certain space is reserved between all deflector subunits along the axial direction, so that the electrode lead of the subunits is convenient.
The array type electrostatic deflector capable of being coded can also be used for processing an integral deflector bracket 163 firstly, then installing and fixing electrodes and electrode leads of the deflector subunits on the deflector bracket 163, and finally grinding the inner wall of the integral structure to ensure the coaxiality of all deflector subunits.
The structure of the encoding array type electrostatic deflector and other electron optical components form a focusing deflection system together to further realize the defect detection of large deflection field and high resolution, and the focusing deflection system comprises a cathode 111, an inhibiting pole 112, an accelerating pole 113, a condenser lens 120, a diaphragm 130, a secondary electron collector 140, a pre-deflector 150, the encoding array type electrostatic deflector, a magnetic focusing lens 170, a sample stage 180 and the like.
Electrons emitted by the cathode 111 are accelerated by the accelerating electrode 113 and then converged into an electron beam by the condenser 120, electrons with large slope and far off-axis are blocked by the diaphragm 130 to obtain an electron beam meeting the paraxial condition, and the electron emission current can be adjusted by the suppressor 112. The paraxial region electron beam is incident on the surface of the sample on the sample stage 280 after passing through the pre-deflector 150, the encodable array type electrostatic deflector and the magnetic focusing lens 170, and secondary electrons are formed. The secondary electrons are accelerated by the lens electric field region and deflected by the deflector, and then collected by the secondary electron collector 140, and finally used for imaging.
In the invention, in order to reduce deflection aberration caused by scanning deflection of a deflector, for the characteristics of magnetic field distribution on a given magnetic focusing lens axis, a coding array type electrostatic deflector is adopted in a lens magnetic field area for carrying out segmentation combination design, the excitation weight coefficient of each deflector subunit is determined by utilizing Gaussian fitting and a least square method, and the actual excitation size of each subunit is adjusted according to the weight coefficient, so that the superposition of the two-pole field distribution on the axis of each subunit and the first derivative of the magnetic field on the magnetic lens axis meet the variable axis condition, thereby reducing the deflection aberration and improving the resolution.
The invention is further described with reference to the accompanying drawings and specific examples.
As shown in fig. 1, the electron beam focusing and deflecting system including the array-type electrostatic deflector of the present invention includes a cathode 111, a suppressor 112, an accelerator 113, a condenser 120, a diaphragm 130, a secondary electron collector 140, a pre-deflector 150, the array-type electrostatic deflector of the present invention, a magnetic focusing lens 170, and a sample stage 180;
the cathode 111, the suppressor 112, the accelerator 113 and the condenser 120 are used for generating parallel electron beams;
the diaphragm 130 is used for obtaining an electron beam satisfying a paraxial condition;
the pre-deflector 150 pre-deflects the electron beam before entering the lens region;
the encodable array electrostatic deflector and the magnetic focusing lens 170 are used for meeting a variable axis condition;
the secondary electron collector 140 serves to collect secondary electrons.
In one example, the encodable array-type electrostatic deflector comprises a plurality of deflector subunits arranged along the axial direction, in the magnetic field region of the lens, a two-pole field function on the axis of each subunit is determined by gaussian fitting, then the two-pole field functions on the axes of all the subunits are fitted with the first derivative of the magnetic field on the axis of the magnetic lens by using a least square method to determine the excitation size of each subunit, and finally the fitting result of the two-pole field on the axis is obtained, as shown in fig. 5. As shown in fig. 6, the root mean square is considered to be less than 5, i.e., the axis-variation condition is satisfied.
In one example, as shown in fig. 1, electrons emitted from the cathode 111 are accelerated by the accelerating electrode 113 and then converged into parallel electron beams by the condenser 120, the electron emission current can be adjusted by the suppressor 112, the diaphragm 130 filters out the electron beams with large off-axis far slope to obtain main electron beams satisfying the paraxial condition, the main electron beams are pre-deflected under the action of the pre-deflector 150, the array-type programmable electrostatic deflector is in an off state (i.e., a non-variable-axis condition), the main electron beams are focused by the magnetic focusing lens 170 and then directly enter the surface of the sample, and the electronic optical characteristics under the non-variable-axis condition with a deflection field of 150um are obtained through numerical calculation, as shown in fig. 7 to 9.
In one example, as shown in fig. 2, the decodable array type electrostatic deflector is in a conducting state, and the controller 1601 and the driver 1602 are used to control the decodable array type electrostatic deflector, that is, the driver 1602 sends the driving signal to the controller 1601 in a coded form, the controller 1601 decodes the coded driving signal and distributes the decoded driving signal to each deflector subunit, the deflector is composed of 8 deflector subunits along an axial array, in a lens magnetic field region, an on-axis dipolar field function of each subunit is determined by using gaussian fitting, and then the on-axis dipolar field function of all subunits is fitted with a first derivative of a magnetic field on a magnetic lens axis by using a least square method to determine the excitation size of each subunit. After the primary electron beam is pre-deflected under the action of the pre-deflector 150, the primary electron beam is incident on the surface of the sample under the combined action of the array-type electrostatic deflector 160 and the magnetic focusing lens 170, and the electron optical characteristics under the condition that the deflection field is 150um and the axis is changed are obtained through numerical calculation, as shown in fig. 7 to 9, the deflection aberration coefficient is obviously reduced compared with that under the condition that the axis is not changed.
In one example, as shown in fig. 3, the structure of the encodable array type electrostatic deflector 160 may adopt a mode that a plurality of deflector subunits are arrayed along the axial direction, each subunit is firstly processed and installed separately, and the processing precision of the inner wall of the electrode is ensured, and finally all subunits are installed along the axial direction by using the inner wall of the electrode as a positioning surface through a special tool clamp to ensure the coaxiality, and a certain space is left between the subunit fixing supports 161 along the axial direction to facilitate the individual lead-out of each subunit electrode 162.
In one example, as shown in fig. 4, the structure of the encodable array type electrostatic deflector 160 may be an integral structure, the inner wall side of the deflector bracket 163 is axially and circumferentially processed with a mounting groove 164, the center of the mounting groove is radially provided with a through hole 165, during mounting, a binding post 166 is fixed in the through hole 165, then an electrode is mounted and fixed in the mounting groove 164, finally the whole inner wall of the deflector is ground to ensure the coaxiality of each deflector subunit, and the electrode may be coated with conductive silver paste and then cured, or may be bonded by a thin sheet electrode.
In one example, the encodable arrayed electrostatic deflector employs more deflector subunits to array, e.g., 10 and 15, and the magnitude of the excitation of each subunit is determined using a gaussian fit and a least squares fit. The electro-optical characteristics under the condition that the deflection field is 150um and the variable axis condition is satisfied are obtained through numerical calculation, and as shown in fig. 7 to 9, the deflection aberration coefficient is slightly reduced compared with that when 8 sub-deflector units are adopted.
Claims (2)
1. A design method of an array-type electrostatic deflector based on a focusing deflection system is characterized in that, the focusing deflection system comprises a cathode (111), wherein the lower part of the cathode (111) is sequentially provided with a suppressor (112), an accelerator (113), a condenser (120), a diaphragm (130), a secondary electron collector (140), a pre-deflector (150) and a magnetic focusing lens (170), the inner side of the magnetic focusing lens (170) is provided with a codeable array type electrostatic deflector, the encodable array electrostatic deflector comprises an encodable array electrostatic deflector body (160), the codeable array type electrostatic deflector body (160) is connected to a controller (1601) through a lead, the controller (1601) is connected to a driver (1602) through a data line, the encodable array type electrostatic deflector body (160) is composed of a plurality of deflector subunits along an axial array; the encodable array type electrostatic deflector body (160) and the magnetic focusing lens (170) are coaxially arranged, the suppression electrode (112), the acceleration electrode (113), the condenser lens (120), the diaphragm (130), the secondary electron collector (140), the pre-deflector (150) and the magnetic focusing lens (170) are coaxially arranged, and the sample stage (180) is arranged at the lower part of the magnetic focusing lens (170);
the design method of the encodable array type electrostatic deflector based on the focusing deflection system comprises the following steps: according to the distribution characteristics of the magnetic field on the shaft of the magnetic focusing lens (170), the first derivative of the magnetic field on the shaft to the z shaft is obtained, and a plurality of deflector subunits are adopted in the magnetic field area to carry out fitting along the axial direction, so that the two-pole field function and the first derivative of the magnetic field on the shaft of the array type electrostatic deflector body (160) capable of coding meet the variable optical axis condition.
2. The method as claimed in claim 1, wherein the method comprises obtaining the on-axis dipole field discrete value of each deflector subunit through numerical calculation, fitting the on-axis dipole field discrete value of each deflector subunit into a dipole field function expression by gaussian fitting, and finally performing least square fitting on the on-axis dipole field function of each deflector subunit and the first derivative of the magnetic field to the z-axis to determine the excitation size of each deflector subunit.
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| CN1630926A (en) * | 2000-02-25 | 2005-06-22 | 汉民微测科技股份有限公司 | Swinging retarding immersion type lens electron optics focusing, deflection and signal collection system and method |
| CN101388317A (en) * | 2008-03-21 | 2009-03-18 | 北京威孚物理科技有限公司 | Scanning electronic microscope |
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