CN112068147A - Integrated chip and electronic device for target detection - Google Patents
Integrated chip and electronic device for target detection Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/34—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/50—Systems of measurement based on relative movement of target
- G01S17/58—Velocity or trajectory determination systems; Sense-of-movement determination systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
Abstract
An integrated chip and an electronic device for target detection are disclosed. The integrated chip includes: a measurement light receiving unit for coupling measurement light reflected from a target into the integrated chip, and including a microlens and a nano antenna; a coupler unit for mixing the reference light and the measurement light and outputting a first coupled optical signal and a second coupled optical signal; a balanced photodetector unit for photoelectrically converting the first coupled optical signal and the second coupled optical signal to output an electrical signal, the electrical signal being used to determine information of a target; and an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to an integrated chip and an electronic device for target detection.
Background
Laser Detection And Ranging (LiDAR), also known as LiDAR, is a remote sensing technology that uses a rotating laser beam to sample the environment at high speed to obtain three-dimensional depth information. Like conventional microwave radars, lidar also operates on the principle of transmitting and receiving electromagnetic waves reflected by a target, however, the operating wavelength of lidar is much shorter than that of the former, which inherently has higher resolution accuracy, larger instantaneous bandwidth, and stronger integration potential. Vehicles (e.g., automobiles, trucks, construction equipment, farm equipment, automated plant equipment) are increasingly equipped with sensors that can provide information to enhance or automate vehicle operation. Exemplary sensors include radio detection and ranging (radar) systems, cameras, microphones, and light detection and ranging (lidar) systems.
Currently, the development of laser modulation technology and narrow linewidth laser technology has grown. However, existing lidar systems are typically formed from discrete components that are not compact and have poor interference rejection.
Disclosure of Invention
It would be advantageous to provide a mechanism that alleviates, mitigates or even eliminates one or more of the above-mentioned problems.
According to an aspect of the present disclosure, there is provided an integrated chip for object detection, including: a measurement light receiving unit for coupling measurement light reflected from the target into the integrated chip, and including a micro lens and a nano antenna; a coupler unit for mixing reference light and the measurement light and outputting a first coupled optical signal and a second coupled optical signal; a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
According to another aspect of the present disclosure, there is provided an electronic device comprising the integrated chip as described above.
These and other aspects of the disclosure will be apparent from and elucidated with reference to the embodiments described hereinafter.
Drawings
Further details, features and advantages of the disclosure are disclosed in the following description of exemplary embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of an integrated chip according to an exemplary embodiment of the present disclosure;
fig. 2 is a schematic diagram of an example structure of the measurement light receiving unit in fig. 1 according to an example embodiment of the present disclosure;
fig. 3 is a schematic diagram of an example structure of the nano-antenna in fig. 2, according to an example embodiment of the present disclosure;
FIG. 4 is a schematic diagram of an integrated chip according to another exemplary embodiment of the present disclosure; and is
Fig. 5 is a schematic structural diagram of a polarizing beam splitter according to an exemplary embodiment of the present disclosure.
Detailed Description
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
Spatially relative terms such as "below …," "below …," "lower," "below …," "above …," "upper," and the like may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" or "under" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" may encompass both an orientation above … and below …. Terms such as "before …" or "before …" and "after …" or "next to" may similarly be used, for example, to indicate the order in which light passes through the elements. The devices may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of a and B" refers to a alone, B alone, or both a and B.
It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to" or "adjacent to" another element or layer, it can be directly on, connected to, coupled to or adjacent to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to," or "directly adjacent to" another element or layer, there are no intervening elements or layers present. However, neither "on … nor" directly on … "should be construed as requiring that one layer completely cover an underlying layer in any event.
Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present specification and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the term "substrate" may refer to a substrate of a diced wafer, or may refer to a substrate of an unslit wafer. Similarly, the terms chip and die may be used interchangeably unless such interchange causes a conflict. It should be understood that the term "layer" includes films and, unless otherwise specified, should not be construed as indicating a vertical or horizontal thickness.
In order to implement ranging or speed detection, the lidar system may transmit Frequency Modulated Continuous Wave (FMCW), and interfere with the received echo signal and the transmitted local oscillator signal to obtain a difference Frequency signal of ranging information, and further measure and calculate a distance and a speed by using the difference Frequency signal.
However, as mentioned above, existing lidar systems are typically formed from discrete components that are not compact and have poor interference rejection. More specifically, the various optical and electrical components of the lidar system may be fabricated separately and then wired accordingly for each of the discrete components to achieve electrical connection and optical coupling between the components. However, the wiring mode of the laser radar system formed by the method is complicated, and disconnection or short circuit among various components can exist, so that the laser radar system is unstable in operation and poor in anti-jamming capability. On the other hand, the laser radar system manufactured by the discrete components occupies a large space and is not compact in structure.
According to an exemplary embodiment of the present disclosure, an integrated chip for target detection is provided.
Fig. 1 is a schematic structural diagram of an integrated chip 100 according to an exemplary embodiment of the present disclosure. As shown in fig. 1: the integrated chip 100 includes: a measurement light receiving unit 110, the measurement light receiving unit 110 being for coupling measurement light reflected from a target into the integrated chip 100, and including a micro lens and a nano antenna; a coupler unit 120, the coupler unit 120 being configured to mix the reference light and the measurement light and output a first coupled optical signal and a second coupled optical signal; a balanced photodetector unit 130, the balanced photodetector unit 130 being configured to perform photoelectric conversion on the first coupled optical signal and the second coupled optical signal to output an electrical signal, wherein the electrical signal is used to determine information of the target; and an optical waveguide for connecting the measurement light receiving unit 110 to the coupler unit 120 and connecting the coupler unit 120 to the balanced photodetector unit 130.
Through above-mentioned integrated chip, can be with measuring light receiving element, coupler unit and balanced photoelectric detector unit integration in same chip to help realizing compact structure, the high target detecting system of integrated level. On the other hand, by making the measurement light receiving unit include a microlens and a nano antenna to couple the measurement light into the integrated chip, it is possible to increase the receiving angle of light, increase the amount of incoming light, and thus improve the spatial light receiving efficiency.
Fig. 2 is a schematic diagram of an example structure 200 of the measurement light receiving unit in fig. 1 according to an example embodiment of the present disclosure. As shown in fig. 2, the microlens 201 is located above the nano-antenna 202, and the measurement light L enters the nano-antenna 202 after passing through the microlens 201, and enters the optical waveguide via the nano-antenna 202. Depending on the materials of the other components fabricated on the integrated chip along with the microlens 201 and the nano-antenna 202, a corresponding medium may be disposed between the microlens 201 and the nano-antenna 202.
The measurement light receiving unit 200 shown in fig. 2 may be used instead of the light receiving structure in the form of an array, thereby enabling to simplify the design of the entire integrated chip by simplifying the measurement light receiving unit. As shown by the light L, even if the incident angle of the light is large, the microlens 201 can deflect the light onto the nano-antenna 202, and therefore, the measurement light receiving unit shown in fig. 2 can increase the receiving angle of the light, thereby increasing the amount of light entering, and can receive the measurement light in a larger angle range.
In some embodiments, the microlenses may be SiO2And a hemispherical structure formed of polyimide or benzocyclobutene. By using SiO2And a polyimideThe formation of the microlens using imine or benzocyclobutene enables the process and material for forming the microlens to be compatible with the existing semiconductor process, and thus, the process for forming the microlens can be simplified.
In some embodiments, the microlenses may be formed using a photoresist hot melt process.
Fig. 3 is a schematic diagram of an example structure of the nano-antenna in fig. 2 according to an example embodiment of the present disclosure. As shown in fig. 3, in some embodiments, the nano-antenna 300 may be formed of Si. The nano-antenna 300 includes an antenna waveguide 310 and an antenna grating 320. The antenna waveguide 310 is integrally formed with the antenna grating 320, and the antenna grating 320 is distributed along the direction S in which the antenna waveguide 310 extends. The antenna grating 320 includes at least two curved portions 321, the at least two curved portions 321 are curved toward one side of the antenna waveguide 310, and a tangential direction T at a midpoint of each of the at least two curved portions 321 is perpendicular to a direction S in which the antenna waveguide 310 extends.
Thereby, the nano antenna can receive the measurement light received by the microlens in a wide range, and thus, the arrangement of the nano antenna can further increase the light receiving angle.
Fig. 4 is a schematic structural diagram of an integrated chip 400 according to another exemplary embodiment of the present disclosure. The integrated chip 400 as shown in fig. 4 may include: a measurement light receiving unit 410, the measurement light receiving unit 410 for coupling measurement light reflected from a target into the integrated chip 400 and including a micro lens and a nano antenna; a coupler unit 420, the coupler unit 420 being configured to mix the reference light and the measurement light and output a first coupled optical signal E1(t) and a second coupled optical signal E2(t); a balanced photodetector unit 430, the balanced photodetector unit 430 being arranged for coupling the first coupled optical signal E1(t) and a second coupled optical signal E2(t) performing photoelectric conversion to output an electric signal I1(t) and I2(t), electric signal I1(t) and I2(t) information for determining a target; and an optical waveguide 460, the optical waveguide 460 being used to connect the measurement light receiving unit 410 to the coupler unit 420 and to connect the coupler unit 420 to the balanced photodetector unit 430.
As shown in fig. 4, in contrast to the integrated chip 100 shown in fig. 1, the integrated chip 400 may further include a reference light receiving unit 440, the reference light receiving unit 440 being configured to couple reference light into the integrated chip 400. In some embodiments, the reference light receiving unit 440 includes a grating coupler. The grating coupler may more specifically be a vertical coupling type grating coupler.
Illustratively, the reflective characteristics of the reflective grating and the distributed bragg mirror can be exploited to highly reflect light from the sides and bottom of the grating coupler, respectively. The distance between the reflection grating and the coupling grating is reasonably selected to enable the reflection light of the two groups of gratings to realize destructive interference so as to weaken the negative second-order reflection of the coupling grating in the process of realizing vertical coupling, thereby designing the high-efficiency vertical coupling type grating coupler.
With continued reference to fig. 4, in some embodiments, coupler unit 420 includes a 2 × 2 coupler for mixing the reference light and the measurement light such that an output first coupled optical signal E1(t) and a second coupled optical signal E2(t) of equal amplitude and a first coupled optical signal E1(t) and a second coupled optical signal E2(t) have a predetermined phase shift therebetween.
In some embodiments, the reference light and the measurement light are input into the coupler unit 420, respectively, and the coupler unit 420 mixes the reference light and the measurement light and distributes the light energy of the two by the interference principle. For example, the output first coupled optical signal E1(t) and a second coupled optical signal E2(t) are two optical signals of equal amplitude with a predetermined phase shift between them, for example a phase shift of pi (180 deg.).
As shown in fig. 4, a first coupled optical signal E1(t) and a second coupled optical signal E2(t) enter the balanced coupler units 430, respectively, to perform photoelectric conversion, thereby enabling the first photocurrents I to be obtained1(t) and a second photocurrent I2(t) of (d). Based on the first photocurrent I1(t) and a second photocurrent I2(t), information of the object to be measured can be obtained.
In some embodiments, the balanced photodetector unit 430 includes first and second photodetectors 431, 432 of uniform parameters and a plurality of external electrodes 441, 442 electrically connected to the first and second photodetectors 431, 432. The first photodetector 431 and the second photodetector 432 may be formed based on the same process and disposed adjacent to each other in space.
Illustratively, the first photodetector 431 and the second photodetector 432 may employ a silicon germanium photodetector. The external connection electrodes 441 and 442 may be used to connect an external signal processing circuit.
The first photoelectric detector and the second photoelectric detector are formed on the basis of the same process and are arranged adjacent to each other in space, so that the process consistency of the detectors can be improved, the first photoelectric detector and the second photoelectric detector with the same parameters can be conveniently realized, and the common-mode interference can be effectively eliminated during coherent detection.
With continued reference to fig. 4, integrated chip 400 may also include a polarizing beam splitter unit 450, as compared to integrated chip 100 as shown in fig. 1. The polarization beam splitter unit 450 includes a first polarization beam splitter 451 and a second polarization beam splitter 452. The first polarization beam splitter 451 is configured to split the measurement light into first polarized light and second polarized light of which polarization states are orthogonal, and input one of the first polarized light and the second polarized light to the coupler unit 420. The second polarization beam splitter 452 is configured to split the reference light into third polarized light and fourth polarized light with orthogonal polarization states, and input one of the third and fourth polarized light to the coupler unit 420. The polarization state of the one of the first and second polarized lights input to the coupler unit 420 is the same as the polarization state of the one of the third and fourth polarized lights input to the coupler unit 420.
The first polarization beam splitter and the second polarization beam splitter in the polarization beam splitter unit can respectively split incident unpolarized light into two beams of polarized light with orthogonal polarization states, and input the measurement light and the reference light with the same polarization state to the coupler unit. Therefore, the polarization of the system can be improved, the influence of noise is reduced, and the anti-interference capability of the chip is improved.
In order to facilitate understanding of the principle of operation of the polarizing beam splitter, it will be explained below with reference to fig. 5. Fig. 5 is a schematic structural diagram of a polarizing beam splitter according to an exemplary embodiment of the present disclosure.
Illustratively, a block of calcite may be processed into a right angle cuboid, cut into two wedges, and then bonded to form the polarizing beam splitter 551 as shown in fig. 5. The bonding surface is a beam splitting surface BS.
When incident light E is incident from the left side of polarization beam splitter 551, it is split at beam splitting surface BS, one of which is transmitted light E that continues to travel in the direction of the incident lighteThe transmitted light and the incident light are in the same straight line, and the other beam is reflected light E reflected and transmitted on the beam splitting surface BSOReflected light EOThe propagation direction of the incident light E and the propagation direction of the incident light E conform to the law of reflection.
As can be seen from FIG. 5, the reflected light E resulting from the beam splittingOAnd transmitted light EeThe light is linearly polarized light, and the incident light is divided into two linearly polarized light with orthogonal polarization directions after passing through the polarization beam splitter.
In the above figure, the operation of the polarization beam splitter is described by taking only one polarization beam splitter as an example. For example, with respect to the polarization beam splitter 551 (first polarization beam splitter), first polarized light (reflected light E) having a polarization state orthogonal to that of incident light is formedO) And light of a second polarization (transmitted light E)e). Similarly, for another polarization beam splitter (second polarization beam splitter), third polarized light and fourth polarized light whose polarization states are orthogonal may be formed. To achieve coherent detection, for example, the third polarized light and one of the first polarized light and the second polarized light having the same polarization state as the third polarized light may be selected to be input to the coupler unit, or the fourth polarized light and one of the first polarized light and the second polarized light having the same polarization state as the fourth polarized light may be selected to be input to the coupler unit.
It can be seen that, before the measurement light and the reference light enter the coupler unit, the incident unpolarized light is split into two beams of polarized light with orthogonal polarization states, and the measurement light and the reference light with the same polarization state are input to the coupler unit. Therefore, the polarization of the system can be improved, the influence of noise is reduced, and the anti-interference capability of the chip is improved.
As shown in fig. 4, in some embodiments, the optical waveguide 460 is also used to connect the polarization beam splitter unit 450 to the measurement light receiving unit 410 and the coupler unit 420. In the case where the integrated chip 400 includes the reference light receiving unit 440, the optical waveguide 460 may also be used to connect the reference light receiving unit 440 to the polarization beam splitter unit 450.
In some embodiments, the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide may be formed on a silicon-on-insulator (SOI) substrate and formed by a silicon-based process. In the case where the integrated chip includes the reference light receiving unit and the polarization beam splitter unit, the reference light receiving unit, the polarization beam splitter unit, the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide may all be formed on an SOI substrate, and these components may be formed by a silicon-based process.
By forming the above components of the integrated chip by a silicon-based process, each unit can be connected by a silicon optical waveguide, so that transmission of optical signals by all silicon optical units is realized. Since the all-silicon optical device can be formed using a semiconductor process, the manufacturing process of the integrated chip can be simplified as a whole.
In some embodiments, the reference light and the measurement light may be from a frequency modulated continuous wave laser light source. Illustratively, the laser light source may emit light in the form of a frequency modulated continuous wave. After the light emitted from the laser light source passes through the beam, a part of the light is used as reference light, and the other part of the light is used as measuring light. The measuring light is reflected by the target, received by the measuring light receiving unit, and processed in the next step.
In some embodiments, the frequency modulated continuous wave laser light source may be integrated on the integrated chip. Depending on the specific application and/or requirements, the frequency modulated continuous wave laser light source may be integrated on the same chip with other units. This contributes to a more compact object detection system. For example, the laser source may be integrated on an integrated chip as shown in fig. 1, thereby further simplifying the optical path design and increasing the integration level.
In some embodiments, the information of the object to be measured may comprise at least one of a position of the object and a velocity of the object, for example. According to specific application and/or requirements, the position and the speed of the target can be obtained, and therefore comprehensive measurement of target information is achieved.
According to another aspect of the present disclosure, there is also provided an electronic device, which may include the aforementioned integrated chip. For example, the integrated chip may be integrated as a functional unit on an electronic device. Illustratively, the electronic device may be a lidar.
While the disclosure has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative and exemplary and not restrictive; the present disclosure is not limited to the disclosed embodiments. Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed subject matter, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps not listed, the indefinite article "a" or "an" does not exclude a plurality, and the term "a plurality" means two or more. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
Aspect 1 an integrated chip for target detection, comprising:
a measurement light receiving unit for coupling measurement light reflected from the target into the integrated chip, and including a micro lens and a nano antenna;
a coupler unit for mixing reference light and the measurement light and outputting a first coupled optical signal and a second coupled optical signal;
a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and
an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
Aspect 2. the integrated chip of aspect 1, wherein,
the micro lens is located above the nano antenna, and
the measuring light enters the nano antenna after passing through the micro lens and enters the optical waveguide through the nano antenna.
Aspect 3. the integrated chip of aspect 2, wherein,
the micro lens is SiO2And a hemispherical structure formed of polyimide or benzocyclobutene.
Aspect 4. the integrated chip of aspect 3, wherein,
the micro lens is formed by adopting a photoresist hot melting process.
Aspect 5 the integrated chip of aspect 1, wherein the nano-antenna is formed of Si, and
the nano antenna comprises an antenna waveguide and an antenna grating, the antenna waveguide is integrally formed with the antenna grating, the antenna grating is distributed in the extending direction of the antenna waveguide and comprises at least two curve parts, the at least two curve parts face to one side of the antenna waveguide and are bent, and the tangent direction of the midpoint of each curve part of the at least two curve parts is perpendicular to the extending direction of the antenna waveguide.
Aspect 6. the integrated chip of aspect 1, wherein,
the coupler unit includes a 2 × 2 coupler, and the 2 × 2 coupler is configured to mix the reference light and the measurement light, so that the output first coupled optical signal and the second coupled optical signal have equal amplitudes, and a predetermined phase shift is provided between the first coupled optical signal and the second coupled optical signal.
Aspect 7. the integrated chip of aspect 1, wherein,
the balanced photodetector unit includes first and second photodetectors having uniform parameters and a plurality of external electrodes electrically connected to the first and second photodetectors, and,
wherein the first photodetector and the second photodetector are formed based on the same process and are spatially adjacently disposed.
Aspect 8 the integrated chip of aspect 1, further comprising: a polarizing beam splitter unit including a first polarizing beam splitter and a second polarizing beam splitter,
wherein the first polarization beam splitter is configured to split the measurement light into first and second polarized lights having orthogonal polarization states and input one of the first and second polarized lights to the coupler unit,
wherein the second polarization beam splitter is configured to split the reference light into third polarized light and fourth polarized light of which polarization states are orthogonal, and input one of the third polarized light and the fourth polarized light to the coupler unit, and
wherein the polarization state of the one of the first and second polarized light is the same as the polarization state of the one of the third and fourth polarized light.
Aspect 9. the integrated chip of aspect 8, wherein,
the optical waveguide is also used to connect the polarization beam splitter unit to the measurement light receiving unit and the coupler unit.
Aspect 10 the integrated chip of aspect 1, further comprising:
a reference light receiving unit to couple the reference light into the integrated chip.
Aspect 11 the integrated chip of aspect 10, wherein the reference light receiving unit comprises a grating coupler.
Aspect 12 the integrated chip of aspect 1, wherein the reference light and the measurement light are from a frequency modulated continuous wave laser light source.
Aspect 13 the integrated chip of aspect 12, wherein the frequency modulated continuous wave laser light source is integrated on the integrated chip.
Aspect 14 the integrated chip of any of aspects 1-13, wherein the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide are formed on a silicon-on-insulator (SOI) substrate and are formed by a silicon-based process.
Aspect 15 the integrated chip of any of aspects 1-13, wherein the information of the target includes at least one of a position of the target and a velocity of the target.
Aspect 16 is an electronic device comprising the integrated chip of any one of aspects 1-15.
Aspect 17 the electronic device of aspect 16, wherein the electronic device is a lidar.
Claims (10)
1. An integrated chip for target detection, comprising:
a measurement light receiving unit for coupling measurement light reflected from the target into the integrated chip, and including a micro lens and a nano antenna;
a coupler unit for mixing reference light and the measurement light and outputting a first coupled optical signal and a second coupled optical signal;
a balanced photodetector unit for photoelectrically converting the first and second coupled optical signals to output an electrical signal for determining information of the target; and
an optical waveguide for connecting the measurement light receiving unit to the coupler unit and connecting the coupler unit to the balanced photodetector unit.
2. The integrated chip of claim 1,
the micro lens is located above the nano antenna, and
the measuring light enters the nano antenna after passing through the micro lens and enters the optical waveguide through the nano antenna.
3. The integrated chip of claim 1,
the coupler unit includes a 2 × 2 coupler, and the 2 × 2 coupler is configured to mix the reference light and the measurement light, so that the output first coupled optical signal and the second coupled optical signal have equal amplitudes, and a predetermined phase shift is provided between the first coupled optical signal and the second coupled optical signal.
4. The integrated chip of claim 1,
the balanced photodetector unit includes first and second photodetectors having uniform parameters and a plurality of external electrodes electrically connected to the first and second photodetectors, and,
wherein the first photodetector and the second photodetector are formed based on the same process and are spatially adjacently disposed.
5. The integrated chip of claim 1, further comprising: a polarizing beam splitter unit including a first polarizing beam splitter and a second polarizing beam splitter,
wherein the first polarization beam splitter is configured to split the measurement light into first and second polarized lights having orthogonal polarization states and input one of the first and second polarized lights to the coupler unit,
wherein the second polarization beam splitter is configured to split the reference light into third polarized light and fourth polarized light of which polarization states are orthogonal, and input one of the third polarized light and the fourth polarized light to the coupler unit, and
wherein the polarization state of the one of the first and second polarized light is the same as the polarization state of the one of the third and fourth polarized light.
6. The integrated chip of claim 5,
the optical waveguide is also used to connect the polarization beam splitter unit to the measurement light receiving unit and the coupler unit.
7. The integrated chip of claim 1, further comprising:
a reference light receiving unit to couple the reference light into the integrated chip.
8. The integrated chip of any of claims 1-7, wherein the measurement light receiving unit, the coupler unit, the balanced photodetector unit, and the optical waveguide are formed on a silicon-on-insulator (SOI) substrate and are formed by a silicon-based process.
9. An electronic device comprising an integrated chip as claimed in any one of claims 1 to 8.
10. The electronic device of claim 9, wherein the electronic device is a lidar.
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