CN112062565A - Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material - Google Patents
Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material Download PDFInfo
- Publication number
- CN112062565A CN112062565A CN202010991507.3A CN202010991507A CN112062565A CN 112062565 A CN112062565 A CN 112062565A CN 202010991507 A CN202010991507 A CN 202010991507A CN 112062565 A CN112062565 A CN 112062565A
- Authority
- CN
- China
- Prior art keywords
- ceramic
- psint
- based high
- entropy
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 title claims abstract description 21
- 238000005057 refrigeration Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 20
- 238000000498 ball milling Methods 0.000 claims abstract description 19
- 238000001035 drying Methods 0.000 claims abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 238000001354 calcination Methods 0.000 claims abstract description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 8
- 239000011812 mixed powder Substances 0.000 claims abstract description 6
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 15
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 11
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 11
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 11
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 11
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 claims description 9
- 238000004321 preservation Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000003889 chemical engineering Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 10
- 238000005303 weighing Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 3
- 210000002568 pbsc Anatomy 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 229910010252 TiO3 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention relates to a preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material, belonging to the technical field of chemical engineering. A preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material comprises ball-milling raw materials and alcohol, drying and pressing the obtained mixed powder; calcining and synthesizing the obtained raw material blocks, and grinding to obtain ceramic particles; pressing into a ceramic blank; sintering under the coverage of the obtained ceramic particles; annealing to obtain the required ceramic material. The preparation method can obtain excellent electric card performance at room temperature and below; meanwhile, the structure and the performance of the ceramic can be controlled by changing the multielement high entropy principle, the annealing time and the temperature. The preparation method is relatively simple, and is a convenient and rapid preparation technology.
Description
Technical Field
The invention relates to a preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material, belonging to the technical field of chemical engineering.
Background
At present, in the process of a compressor refrigeration method, a large amount of gas is released by the added Freon, so that the environment is directly damaged, and a very important task is to find a new economic and environment-friendly refrigeration mode to replace the traditional compression refrigeration technology. The electrocaloric effect refers to a phenomenon that polarization state changes in a polar material due to application or removal of an electric field so as to cause change of adiabatic temperature or isothermal entropy of the material, and the effect can be used for development of novel solid refrigeration materials. The electric card refrigeration material has the advantages of environmental protection, high efficiency and easy operationMiniaturization and the like. While the ferroelectric material has excellent electric card effect, the research on the electric card effect of the ferroelectric material is mainly focused on the research field of ceramics and thin films using Si-based semiconductors as substrates, for example, the research on PbxSc1-xTiO3Electrocaloric effects of components in the system, e.g. study of PbxCaySr(1-x-y)TiO3Pyroelectric response and temperature-dependent effect.
Disclosure of Invention
The invention aims to provide a preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material. The PSINT is a good electrocaloric effect ferroelectric material which stimulates the temperature entropy change of the material according to the multi-element high entropy principle, and the PSINT ceramic material which can be prepared by a solid phase sintering method has a good electrocaloric effect, and the electrocaloric performance of the ceramic can be regulated and controlled by changing the annealing time.
The purpose of the invention is realized by the following technical scheme:
a preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material comprises the following steps:
1) ball-milling prepared PSINT raw materials and alcohol, drying the mixed powder obtained by grinding, and pressing a column to prepare a raw material block, wherein the prepared PSINT raw materials comprise PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5The PSINT has a general formula of PbScxInyNb0.5-xTa0.5- yO3Wherein x is more than 0 and less than 0.5, and y is more than 0 and less than 0.5;
2) calcining and synthesizing the raw material blocks obtained in the step 1), and grinding to obtain ceramic particles;
3) pressing the ceramic particles into a ceramic blank;
4) sintering the obtained ceramic blank under the covering of the particles obtained in the step 2), wherein the sintering temperature is 1200-1300 ℃, and the heat preservation is carried out for 8-10 hours;
5) annealing the product obtained in the step 4) to obtain the required ceramic material.
Preferably, the rotation speed of the ball milling in the step 1) is 400-600rpm, and the ball milling time is 10-16 hours.
Preferably, the drying temperature in step 1) is 100-150 ℃.
Preferably, the calcination temperature in the step 2) is 800-900 ℃, and the calcination time is 2-4 hours.
Preferably, the pressing in step 3) is carried out under the condition of cold isostatic pressing of 25-30MPa for 4-8 minutes.
Preferably, the annealing temperature in the step 5) is 1100-1200 ℃, and the annealing time is any one of 8-10h, 18-20h, 28-30h, 38-40h and 48-50 h.
The invention has the beneficial effects that: the preparation method can obtain excellent electric card performance at room temperature and below; meanwhile, the structure and the performance of the ceramic can be controlled by changing the multielement high entropy principle, the annealing time and the temperature. The preparation method is relatively simple, and is a convenient and rapid preparation technology.
Drawings
FIG. 1 is a graph comparing electrical card performance at different annealing times for PSINT ceramics obtained in examples 1-5 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited to the scope of the examples. These examples are intended to illustrate the invention only and are not intended to limit the scope of the invention. In addition, various modifications may occur to those skilled in the art upon reading the present disclosure, and such equivalent variations are within the scope of the present invention as defined in the appended claims.
Example 1
(1) Will need excessive PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5Drying the raw material and weighing PbO2 13g、Ta2O5 3g、Sc2O3 2g、In2O3 1g、Nb2O51g, keeping the temperature of a laboratory at the vicinity of room temperature and keeping the humidity below 40%;
(2) in the step (1)Weighing the excess PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5Performing ball milling in a ball milling pot with a proper amount of alcohol, wherein the rotating speed is set to 400rpm, and the ball milling time is 10 hours;
(3) the PbSc which is ball-milled in the step (2) is treated0.1In0.1Nb0.4Ta0.4O3And drying and pressing the mixed powder to obtain a raw material block. The drying temperature is controlled at 100 ℃;
(4) calcining the raw material blocks obtained in the step (3) at 800 ℃ for 2 hours to synthesize the ceramic particles, and grinding the ceramic particles;
(5) and (4) ball-milling the sample particles obtained in the step (4) under alcohol, sieving and drying. Taking a proper amount of sample, pre-pressing and molding the sample in a mold, and then placing the sample in a cold isostatic press at 25MPa for 4 minutes to press the sample into a ceramic blank;
(6) covering and sintering the PSINT ceramic blank obtained in the step (7) under the particles obtained in the step (4), wherein the sintering temperature is 1200 ℃, and the temperature is kept for 8 hours to obtain a ceramic material with excellent electrocaloric effect;
(7) and (4) annealing the PSINT ceramic material obtained in the step (6) in a 1100 ℃ tube furnace for 10 hours to obtain the required ceramic material.
Example 2
(1) Will need excessive PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5Drying the raw material and weighing PbO2 12g、Ta2O5 2g、Sc2O3 1g、In2O3 0.3g、Nb2O50.3g, keeping the temperature of a laboratory at the vicinity of room temperature and keeping the humidity below 40%;
(2) weighing the excessive PbO weighed in the step (1)2、Ta2O5、Sc2O3、In2O3And Nb2O5Ball milling is carried out in a ball milling pot with a proper amount of alcohol, the rotating speed is set to be 500 r/min, and the ball milling time is set15 hours;
(3) the PbSc which is ball-milled in the step (2) is treated0.1In0.1Nb0.4Ta0.4O3And drying and pressing the mixed powder to obtain a raw material block. The drying temperature is controlled at 120 ℃;
(4) calcining the raw material blocks obtained in the step (3) at 850 ℃ for 3 hours to synthesize the ceramic particles, and grinding the ceramic particles to obtain ceramic particles;
(5) and (4) ball-milling the sample particles obtained in the step (4) under alcohol, sieving and drying. Taking a proper amount of sample, pre-pressing and molding the sample in a mold, and then placing the sample in a cold isostatic press under 26MPa for 5 minutes to press the sample into a ceramic blank;
(6) covering and sintering the PSINT ceramic blank obtained in the step (7) under the particles obtained in the step (4), wherein the sintering temperature is 1250 ℃, and the temperature is kept for 9 hours to obtain a ceramic material with excellent electrocaloric effect;
(7) and (4) annealing the PSINT ceramic material obtained in the step (6) in a tubular furnace at 1150 ℃ for 20 hours to obtain the required ceramic material.
Example 3
(1) Will need excessive PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5Drying the raw material and weighing PbO2 12g、Ta2O5 2g、Sc2O3 1g、In2O3 0.3g、Nb2O50.3g, keeping the temperature of a laboratory at the vicinity of room temperature and keeping the humidity below 40%;
(2) weighing the excessive PbO weighed in the step (1)2、Ta2O5、Sc2O3、In2O3And Nb2O5Performing ball milling in a ball milling pot with a proper amount of alcohol, wherein the rotating speed is set to 600rpm, and the ball milling time is 16 hours;
(3) the PbSc which is ball-milled in the step (2) is treated0.1In0.1Nb0.4Ta0.4O3And drying and pressing the mixed powder to obtain a raw material block. The drying temperature is controlled at 150 ℃;
(4) calcining the raw material blocks obtained in the step (3) at 900 ℃ for 4 hours to synthesize the raw material blocks, and grinding the raw material blocks to obtain ceramic particles;
(5) and (4) ball-milling the sample particles obtained in the step (4) under alcohol, sieving and drying. Taking a proper amount of sample, pre-pressing and molding the sample in a mold, and then placing the sample in a cold isostatic press for pressing into a ceramic blank body under the pressure of 30MPa for 8 minutes;
(6) covering and sintering the PSINT ceramic blank obtained in the step (7) under the particles obtained in the step (4), wherein the sintering temperature is 1300 ℃, and the temperature is kept for 10 hours to obtain a ceramic material with excellent electrocaloric effect;
(7) and (4) annealing the PSINT ceramic material obtained in the step (6) in a tube furnace at 1200 ℃ for 30 hours to obtain the required ceramic material.
Example 4
The same method as in example 1 was used to prepare a ceramic material required for ceramics, except that the annealing time in step (7) was 40 hours.
Example 5
The same method as in example 1 was used to prepare a ceramic material required for ceramics, except that the annealing time in step (7) was 50 hours.
Example 6
The same method as in example 1 was used to prepare the ceramic material required for the ceramic, except that the annealing time in step (7) was 8 hours.
Example 7
The same method as in example 1 was used to prepare a ceramic material required for ceramics, except that the annealing time in step (7) was 18 hours.
Example 8
The same method as in example 1 was used to prepare a ceramic material required for ceramics, except that the annealing time in step (7) was 28 hours.
Example 9
The same process as in example 1 was used to prepare the ceramic material required for the ceramic, except that the annealing time in step (7) was 38 hours.
Example 10
The same method as in example 1 was used to prepare a ceramic material required for ceramics, except that the annealing time in step (7) was 48 hours.
Claims (6)
1. A preparation method of a PSINT-based high-entropy ceramic electrocaloric refrigeration material is characterized by comprising the following steps of:
1) ball-milling prepared PSINT raw materials and alcohol, drying the mixed powder obtained by grinding, and pressing a column to prepare a raw material block, wherein the prepared PSINT raw materials comprise PbO2、Ta2O5、Sc2O3、In2O3And Nb2O5The PSINT has a general formula of PbScxInyNb0.5-xTa0.5-yO3Wherein x is more than 0 and less than 0.5, and y is more than 0 and less than 0.5;
2) calcining and synthesizing the raw material blocks obtained in the step 1), and grinding to obtain ceramic particles;
3) pressing the ceramic particles into a ceramic blank;
4) sintering the obtained ceramic blank under the covering of the particles obtained in the step 2), wherein the sintering temperature is 1200-1300 ℃, and the heat preservation is carried out for 8-10 hours;
5) annealing the product obtained in the step 4) to obtain the required ceramic material.
2. The method for preparing the PSINT-based high-entropy ceramic electrical card refrigeration material as claimed in claim 1, wherein the rotation speed of the ball milling in the step 1) is 400-600rpm, and the ball milling time is 10-16 hours.
3. The method for preparing the PSINT-based high-entropy ceramic electrical card refrigeration material as claimed in claim 1, wherein the drying temperature in the step 1) is 100-150 ℃.
4. The method for preparing the PSINT-based high-entropy ceramic electrical card refrigeration material as claimed in claim 1, wherein the calcination temperature in the step 2) is 800-900 ℃, and the calcination time is 2-4 hours.
5. The method for preparing the PSINT-based high-entropy ceramic electrocaloric refrigeration material according to claim 1, wherein the pressing in the step 3) is performed under a cold isostatic pressure of 25-30MPa for 4-8 minutes.
6. The method for preparing the PSINT-based high-entropy ceramic electrical card refrigeration material as claimed in claim 1, wherein the annealing temperature in the step 5) is 1100-1200 ℃, and the annealing time is any one of 8-10h, 18-20h, 28-30h, 38-40h and 48-50 h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010991507.3A CN112062565B (en) | 2020-09-17 | 2020-09-17 | Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010991507.3A CN112062565B (en) | 2020-09-17 | 2020-09-17 | Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112062565A true CN112062565A (en) | 2020-12-11 |
| CN112062565B CN112062565B (en) | 2022-05-03 |
Family
ID=73681287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010991507.3A Active CN112062565B (en) | 2020-09-17 | 2020-09-17 | Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112062565B (en) |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2555161A1 (en) * | 1983-11-23 | 1985-05-24 | Centre Nat Rech Scient | New lead-based oxyfluorinated perovskite compositions sintering at low temperature and usable as dielectric ceramics for multilayer capacitors |
| US4599677A (en) * | 1984-06-01 | 1986-07-08 | Lawless William N | Capacitive energy storage device for use at cryogenic temperatures |
| US4675123A (en) * | 1979-01-17 | 1987-06-23 | Ngk Spark Plug Co., Ltd. | Piezoelectric composite material |
| GB8809955D0 (en) * | 1988-04-27 | 1988-06-02 | Plessey Co Plc | Method of manufacturing perovskite lead scandium tantalate |
| SU1479440A1 (en) * | 1986-12-18 | 1989-05-15 | Научно-Исследовательский Институт Физики Твердого Тела Латвийского Государственного Университета Им.П.Стучки | Lead scanotantalate as active element of microcryogenic apparatus |
| GB9025547D0 (en) * | 1990-11-23 | 1991-01-09 | Marconi Gec Ltd | A method of manufacturing free standing perovskite lead scandium tantalate film |
| GB8926186D0 (en) * | 1988-11-30 | 1991-04-03 | Plessey Co Plc | Improvement to dielectric bolometers |
| US20070117913A1 (en) * | 2005-11-23 | 2007-05-24 | Qi Tan | Antiferroelectric polymer composites, methods of manufacture thereof, and articles comprising the same |
| CN101037332A (en) * | 2007-04-20 | 2007-09-19 | 四川大学 | Multi constituent niobate lead-free piezoelectric ceramics |
| JP2010037131A (en) * | 2008-08-04 | 2010-02-18 | National Institute Of Advanced Industrial & Technology | OXIDE SINTERED COMPACT HAVING n-TYPE THERMOELECTRIC CHARACTERISTIC |
| CN102060533A (en) * | 2010-11-29 | 2011-05-18 | 中国科学院上海硅酸盐研究所 | Method for preparing fine-grain lead scandium tantalate pyroelectric ceramic material |
| CN102219512A (en) * | 2010-04-13 | 2011-10-19 | 中国科学院上海硅酸盐研究所 | Preparation method of lead scandium tantalate pyroelectric ceramics |
| CN102560617A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院福建物质结构研究所 | Method for preparing ferroelectric single crystal lead indium niobate-lead titanate |
| CN105236960A (en) * | 2015-09-15 | 2016-01-13 | 奈申（上海）智能科技有限公司 | Barium-titanate-based colossal-electrocaloric-effect chip-type laminate ceramic electrocaloric refrigeration device |
| CN106007710A (en) * | 2015-03-26 | 2016-10-12 | 三菱综合材料株式会社 | Ferroelectric film and method of producing same |
| CN108439981A (en) * | 2018-03-20 | 2018-08-24 | 西安交通大学 | A kind of niobic acid silver-based antiferroelectric materials and preparation method thereof of width warm area dielectric stability and high energy storage density |
| CN110818410A (en) * | 2019-11-12 | 2020-02-21 | 西安电子科技大学 | High-temperature PIN-PHT piezoelectric ceramic and preparation method thereof |
| CN110950660A (en) * | 2019-09-30 | 2020-04-03 | 西安工业大学 | Method for improving dielectric and pyroelectric properties of relaxor ferroelectric film |
| CN111128682A (en) * | 2019-12-27 | 2020-05-08 | 广西大学 | Preparation method of film for regulating and controlling performance of electric card through substrate |
| CN111517788A (en) * | 2020-05-20 | 2020-08-11 | 哈尔滨工业大学 | Preparation method of potassium-sodium niobate ceramic material with high remanent polarization |
-
2020
- 2020-09-17 CN CN202010991507.3A patent/CN112062565B/en active Active
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4675123A (en) * | 1979-01-17 | 1987-06-23 | Ngk Spark Plug Co., Ltd. | Piezoelectric composite material |
| FR2555161A1 (en) * | 1983-11-23 | 1985-05-24 | Centre Nat Rech Scient | New lead-based oxyfluorinated perovskite compositions sintering at low temperature and usable as dielectric ceramics for multilayer capacitors |
| US4599677A (en) * | 1984-06-01 | 1986-07-08 | Lawless William N | Capacitive energy storage device for use at cryogenic temperatures |
| SU1479440A1 (en) * | 1986-12-18 | 1989-05-15 | Научно-Исследовательский Институт Физики Твердого Тела Латвийского Государственного Университета Им.П.Стучки | Lead scanotantalate as active element of microcryogenic apparatus |
| GB8809955D0 (en) * | 1988-04-27 | 1988-06-02 | Plessey Co Plc | Method of manufacturing perovskite lead scandium tantalate |
| WO1989010335A1 (en) * | 1988-04-27 | 1989-11-02 | Plessey Overseas Limited | A method of manufacturing perovskite lead scandium tantalate |
| GB8926186D0 (en) * | 1988-11-30 | 1991-04-03 | Plessey Co Plc | Improvement to dielectric bolometers |
| GB9025547D0 (en) * | 1990-11-23 | 1991-01-09 | Marconi Gec Ltd | A method of manufacturing free standing perovskite lead scandium tantalate film |
| US20070117913A1 (en) * | 2005-11-23 | 2007-05-24 | Qi Tan | Antiferroelectric polymer composites, methods of manufacture thereof, and articles comprising the same |
| CN101037332A (en) * | 2007-04-20 | 2007-09-19 | 四川大学 | Multi constituent niobate lead-free piezoelectric ceramics |
| JP2010037131A (en) * | 2008-08-04 | 2010-02-18 | National Institute Of Advanced Industrial & Technology | OXIDE SINTERED COMPACT HAVING n-TYPE THERMOELECTRIC CHARACTERISTIC |
| CN102219512A (en) * | 2010-04-13 | 2011-10-19 | 中国科学院上海硅酸盐研究所 | Preparation method of lead scandium tantalate pyroelectric ceramics |
| CN102060533A (en) * | 2010-11-29 | 2011-05-18 | 中国科学院上海硅酸盐研究所 | Method for preparing fine-grain lead scandium tantalate pyroelectric ceramic material |
| CN102560617A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院福建物质结构研究所 | Method for preparing ferroelectric single crystal lead indium niobate-lead titanate |
| CN106007710A (en) * | 2015-03-26 | 2016-10-12 | 三菱综合材料株式会社 | Ferroelectric film and method of producing same |
| CN105236960A (en) * | 2015-09-15 | 2016-01-13 | 奈申（上海）智能科技有限公司 | Barium-titanate-based colossal-electrocaloric-effect chip-type laminate ceramic electrocaloric refrigeration device |
| CN108439981A (en) * | 2018-03-20 | 2018-08-24 | 西安交通大学 | A kind of niobic acid silver-based antiferroelectric materials and preparation method thereof of width warm area dielectric stability and high energy storage density |
| CN110950660A (en) * | 2019-09-30 | 2020-04-03 | 西安工业大学 | Method for improving dielectric and pyroelectric properties of relaxor ferroelectric film |
| CN110818410A (en) * | 2019-11-12 | 2020-02-21 | 西安电子科技大学 | High-temperature PIN-PHT piezoelectric ceramic and preparation method thereof |
| CN111128682A (en) * | 2019-12-27 | 2020-05-08 | 广西大学 | Preparation method of film for regulating and controlling performance of electric card through substrate |
| CN111517788A (en) * | 2020-05-20 | 2020-08-11 | 哈尔滨工业大学 | Preparation method of potassium-sodium niobate ceramic material with high remanent polarization |
Non-Patent Citations (4)
| Title |
|---|
| B.GUTTLER等: "local phenomenon in relaxor-ferroelectric PbSc0.5B"(B"=Nb，Ta) studied by ramam spectroscopy", 《JOURNAL OF MOLECULAR STRUCTURE》 * |
| B.MIHAILOVA等: "resonance raman scattering of relaxors PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3", 《APPIED PHYSICS LETTERS》 * |
| BIAOLIN PENG等: "High dielectric non-line properties of the Pb[(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2]O3 ceramics", 《MATERIALS RESEARCH BULLETIN》 * |
| Y.YONEDA等: "Local Structure of relaxor Pb(In0.5Nb0.5)O3 ferroelectrics", 《JOURNAL OF APPLIED PHYSICS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112062565B (en) | 2022-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100509703C (en) | Method for preparing ferrite bismuth lanthanum-titanate lead solid solution ceramic under strong magnetic field action | |
| CN111320468B (en) | Preparation method of doped bismuth ferrite-barium titanate lead-free piezoelectric ceramic material | |
| CN101648807A (en) | Calcium barium zirconate titanate base piezoceramics and preparation method thereof | |
| CN107840655B (en) | Preparation method of bismuth potassium titanate-based lead-free relaxation ferroelectric ceramic with morphotropic phase boundary | |
| CN101805185A (en) | Method for preparing leadmagnesio-niobate lead titanate relaxation ferroelectric ceramics | |
| CN105130421A (en) | Ti-position high-valence substituted SrTiO3 giant dielectric ceramic and preparation method thereof | |
| CN112552048B (en) | Preparation method of potassium-sodium niobate ceramic with high piezoelectric property and high remanent polarization | |
| CN109180181A (en) | A kind of unleaded relaxation antiferroelectric ceramics energy storage material and preparation method thereof | |
| CN101429027A (en) | Potassium sodium niobate based leadless piezoelectric ceramic and low-temperature sintering production process | |
| CN110498681B (en) | Relaxor ferroelectric ceramic with high electrocaloric effect at room temperature, preparation method and application thereof | |
| CN109704762A (en) | A kind of SrNb2 O6 base class antiferroelectric ceramics and its preparation method and application | |
| CN111004030B (en) | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof | |
| CN110357624B (en) | High-dielectric-constant glass frit modified strontium zirconate doped potassium-sodium niobate lead-free transparent ceramic material and preparation method thereof | |
| CN110128128B (en) | Bismuth ferrite-bismuth aluminate-bismuth zinc titanate high-temperature piezoelectric ceramic with zero temperature coefficient and high-temperature stability and preparation method thereof | |
| CN110981469A (en) | Preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic | |
| CN106699176A (en) | Barium titanate-based leadless piezoelectric ceramic and preparation method and application thereof | |
| CN114436643A (en) | Giant dielectric constant and low dielectric loss ceramic and preparation method thereof | |
| CN107285760B (en) | Preparation method of low-loss giant dielectric constant ceramic material | |
| CN114085079A (en) | High-energy-storage non-equimolar-ratio high-entropy perovskite oxide ceramic material and preparation method thereof | |
| CN104098330B (en) | Post growth annealing is adopted to prepare the method for high-performance barium strontium titanate pyroelectric ceramics | |
| CN112062565B (en) | Preparation method of PSINT-based high-entropy ceramic electrocaloric refrigeration material | |
| CN116813335B (en) | Bismuth sodium titanate based relaxation ferroelectric ceramic material with wide temperature range and high electric clamping effect, and preparation method and application thereof | |
| CN102060527B (en) | Doped and modified barium strontium calcium titanate heat-release pyroelectric ceramic material and preparation method thereof | |
| CN115321976B (en) | CCTO ceramic material with giant dielectric constant and low dielectric loss and preparation method thereof | |
| CN116003106A (en) | High-dielectric pure-phase high-entropy oxide material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231116 Address after: Room B1103 and 1104, Huihu Building, No.10 Yueliangwan Road, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215124 (Cluster Registration) Patentee after: Suzhou Kabaka Electronic Technology Co.,Ltd. Address before: 530004, 100 East University Road, the Guangxi Zhuang Autonomous Region, Nanning Patentee before: GUANGXI University |
|
| TR01 | Transfer of patent right |