CN110981469A - Preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic - Google Patents

Preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic Download PDF

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CN110981469A
CN110981469A CN201911420194.XA CN201911420194A CN110981469A CN 110981469 A CN110981469 A CN 110981469A CN 201911420194 A CN201911420194 A CN 201911420194A CN 110981469 A CN110981469 A CN 110981469A
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任鹏荣
王奕轲
王欣
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Xian University of Technology
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Abstract

The invention discloses a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, which introduces BiFeO through component design3So that the relaxation phase in the ceramic is converted into a ferroelectric phase, thereby obtaining a high depolarization temperature. The invention relates to a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, and provides sodium bismuth titanate (BNT) ceramic with high piezoelectric constant and low depolarization temperature, which improves the temperature stability of the piezoelectric constant, reduces dielectric loss, has simple method, low cost and good repeatability, and the obtained sodium bismuth titanate high-temperature piezoelectric ceramic has excellent piezoelectric property.

Description

Preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic
Technical Field
The invention belongs to the technical field of piezoelectric ceramic preparation, and relates to a preparation method of sodium bismuth titanate-based high-temperature piezoelectric ceramic.
Background
Sodium bismuth titanate (BNT) ceramics have received widespread attention since their discovery for their superior piezoelectric properties. The piezoelectric constant of BNT can be increased by doping the element, but the depolarization temperature is also reduced. In the literature "structural and electrical properties of Bi0.5Na0.5TiO3–BaTiO3–Bi0.5Li0.5TiO3lead-free piezoelectric ceramics，Solid StThe ate Ionics 178(2008) 1930-3And Bi0.5Li0.5TiO3The piezoelectric constant of the ceramic is increased from 100pC/N to 208pC/N, but the depolarization temperature is reduced from 100 ℃ to 80 ℃. The method improves the piezoelectric constant and the temperature stability without reducing the depolarization temperature, and is an important research direction for preparing the sodium bismuth titanate ceramics.
Disclosure of Invention
The invention aims to provide a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, which solves the problem that the depolarization temperature can be reduced when the piezoelectric constant of the existing BNT ceramic is increased.
The technical scheme adopted by the invention is to prepare the sodium bismuth titanate high-temperature piezoelectric ceramic by doping, and the method comprises the following specific steps:
step 1, according to chemical formula xNa0.5Bi0.5TiO3-(1-x)BiFeO3Wherein x is 1, 0.95, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, or2O3、Na2CO3、TiO2And Fe2O3The powder is used as raw material for sintering ceramics, and calculated and weighed so that BNT and BiFeO3The molar ratio of (A) to (B) is 100: 0-40: 60;
step 2, using alcohol as a medium in a ball mill, and ball-milling and drying the slurry to obtain the doped BiFeO3BNT powder;
step 3, doping BiFeO obtained in the step 23Pressing the BNT powder into a wafer by an isostatic pressing technology;
step 4, sintering the wafer formed in the step 3 into a ceramic wafer;
and 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol to obtain the ceramic wafer.
The present invention is also characterized in that,
in the step 1, 20g of each component powder is obtained, and the mole number N of each powder is as follows:
Figure BDA0002352171910000021
bi for each component2O3The quality is as follows:
Figure BDA0002352171910000022
Na2CO3the quality is as follows:
Figure BDA0002352171910000023
TiO2the mass of the method is as follows:
Figure BDA0002352171910000024
Fe2O3the mass of the method is as follows:
Figure BDA0002352171910000025
calculating the obtained weight of each raw material according to the formula, drying the weighed raw materials in an oven for 12-24 hours to remove the water in the raw materials, and drying the dried raw materials respectively according to NBNT:NBFOPreparing materials according to the calculated molar ratio of 100:1, 95:5, 90:10, 80:20, 70:30, 60:40, 50:50 and 40: 60; weighing Bi2O311.1082～13.8210g，Na2CO32.5267～0.7797g，TiO27.6157～2.3941g，Fe2O30.3718-3.5224 g, BNT and BiFeO3The molar ratio of (A) to (B) is 100: 0-40: 60; the prepared raw materials are placed in a ball milling tank for ball milling.
In the step 2, zirconia balls are used as grinding balls in a planetary ball mill, ball milling is carried out for 12 hours at the rotating speed of 250-450 r/min, the grinding balls are filtered out by using a filter screen, slurry of mixed alcohol is placed into an air-blast drying oven at the temperature of 80-100 ℃ to dry a ball milling medium, and BiFeO doped can be obtained after drying3The BNT dry powder of (3).
In step 3, the wafer with a diameter of 10mm and a thickness of 1mm is formed by pressing with a cold isostatic press at a pressure of 200MPa for 5 min.
And 4, preserving the heat of the formed wafer at 1000-1100 ℃ for 2h, and sintering.
In step 1 Bi2O3、Na2CO3、TiO2And Fe2O3The purity is not less than 98.5%.
The invention has the beneficial effects of providing the sodium bismuth titanate (BNT) ceramic with high piezoelectric constant and low depolarization temperature, improving the temperature stability of the piezoelectric constant and reducing the dielectric loss. BiFeO is introduced by component design by utilizing a solid-phase synthesis method3So that the relaxation phase in the ceramic is transformed into a ferroelectric phase, thereby achieving a high depolarization temperature. The invention relates to a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, which has the advantages of simple method, low cost, good repeatability and excellent piezoelectric property of the obtained sodium bismuth titanate high-temperature piezoelectric ceramic.
Drawings
FIG. 1 is an X-ray diffraction pattern of ceramic powders prepared in examples 1 to 8 of the present invention;
FIG. 2 is a graph showing the change of piezoelectric constant with temperature of the ceramics prepared in examples 1 to 8 of the present invention.
Detailed Description
The invention relates to a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, which is prepared by mixing Bi2O3、Na2CO3、TiO2And Fe2O3Weighing according to stoichiometric ratio, mixing, ball milling and drying, then extruding mixed powder of different components into tablets by isostatic pressing technology, and finally sintering at different temperatures.
The method comprises the following specific steps:
step 1, according to chemical formula xNa0.5Bi0.5TiO3-(1-x)BiFeO3Wherein x is 1, 0.95, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, or2O3、Na2CO3、TiO2And Fe2O3The powder is used as the raw material for sintering ceramics, and is calculated and weighed,
in the step 1, 20g of each component powder is obtained, and the mole number N of each powder is as follows:
Figure BDA0002352171910000041
bi for each component2O3The quality is as follows:
Figure BDA0002352171910000042
Na2CO3the quality is as follows:
Figure BDA0002352171910000043
TiO2the mass of the method is as follows:
Figure BDA0002352171910000044
Fe2O3the mass of the method is as follows:
Figure BDA0002352171910000045
calculating the obtained weight of each raw material according to the formula, drying the weighed raw materials in an oven for 12-24 hours to remove the water in the raw materials, and drying the dried raw materials respectively according to NBNT:NBFOPreparing materials according to the calculated molar ratio of 100:1, 95:5, 90:10, 80:20, 70:30, 60:40, 50:50 and 40: 60;
weighing Bi2O311.1082～13.8210g，Na2CO32.5267～0.7797g，TiO27.6157～2.3941g，Fe2O30.3718-3.5224 g, BNT and BiFeO3The molar ratio of (A) to (B) is 100: 0-40: 60; the prepared raw materials are placed in a ball milling tank for ball milling.
Step 1 of Bi2O3、Na2CO3、TiO2And Fe2O3The purity is not less than 98.5 percent。
Step 2, using alcohol as a medium in a ball mill, and ball-milling and drying the slurry to obtain the doped BiFeO3BNT powder;
step 2, using zirconia balls as grinding balls in a planetary ball mill, ball-milling for 12 hours at a rotating speed of 250-450 r/min, filtering out the grinding balls by using a filter screen, putting the slurry of the mixed alcohol into a forced air drying oven at 80-100 ℃ to dry a ball-milling medium, and drying to obtain the BiFeO-doped slurry3The BNT dry powder of (3).
Step 3, doping BiFeO obtained in the step 23Pressing the BNT powder into a wafer by an isostatic pressing technology;
in the step 3, a cold isostatic press is adopted to press the wafer into a wafer with the diameter of 10mm and the thickness of 1mm for 5min under the pressure of 200 MPa.
Step 4, sintering the wafer formed in the step 3 into a ceramic wafer;
and 4, preserving the heat of the formed wafer at 1000-1100 ℃ for 2h, and sintering.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol to obtain the ceramic wafer.
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Example 1
Step 1, preparing 20g of Na0.5Bi0.5TiO3Powder obtained by calculating the following formulas (1) to (4), and weighing Bi with the purity of 98.5 percent2O311.1082g，Na2CO32.5267g，TiO27.6157g。
And 2, ball-milling for 12 hours in a planetary ball mill at the rotating speed of 250r/min by using 85ml of alcohol as a medium, and drying the slurry to obtain pure BNT powder.
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer at 1100 ℃ for 2h, and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(a) is the X-ray diffraction pattern of the pure BNT ceramic powder in example 1, from which it can be seen that the sample has a single perovskite phase and no second phase appears. FIG. 2 is a graph showing the change of piezoelectric constant of the ceramic with temperature at 30-280 deg.C, and it can be seen that the maximum depolarization temperature of the ceramic can reach 280 deg.C.
Example 2
Step 1, preparing 20g of 0.95Na0.5Bi0.5TiO3-0.05BiFeO3Powder obtained by calculating the following formulas (1) to (5), and weighing Bi with the purity of 98.6 percent2O311.3918g，Na2CO32.3444g，TiO27.0661g，Fe2O30.3718g, so that BNT and BiFeO3In a molar ratio of 95: 5;
step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12h at the rotating speed of 260r/min, and drying the slurry to obtain the doped BiFeO3BNT powder;
step 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm;
step 4, preserving the heat of the formed wafer at 1050 ℃ for 2h, and sintering the wafer into porcelain;
and 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(b) is an X-ray diffraction pattern of the ceramic powder of example 2, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. As can be seen from the graph of the piezoelectric constant of the ceramic in FIG. 2 at 30-220 ℃ as a function of temperature, the maximum depolarization temperature of the ceramic can reach 220 ℃.
Example 3
Step 1, preparing 20g of 0.9Na0.5Bi0.5TiO3-0.1BiFeO3The powder is obtained by calculating the formulas (1) to (5), and Bi with the purity of 98.7 percent needs to be weighed2O311.6626g, Na2CO32.1704g, TiO26.5448g, Fe2O30.7194g, so that BNT and BiFeO3Is 90: 10.
Step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12h at the rotating speed of 270r/min, and drying the slurry to obtain the doped BiFeO3The BNT powder of (4).
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer at 1000 ℃ for 2h, and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(c) is an X-ray diffraction pattern of the ceramic powder of example 3, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-220 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 220 deg.C.
Example 4
Step 1, preparing 20g of 0.8Na0.5Bi0.5TiO3-0.2BiFeO3The powder is obtained by calculating the formulas (1) to (5), and Bi with the purity of more than 98.5 percent is weighed2O312.1705g, Na2CO31.8456g, TiO25.5626g, Fe2O31.3903g, so that BNT and BiFeO3In a molar ratio of 80: 20;
step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12 hours at a rotating speed of 250r/min, and drying the slurry to obtain the doped BiFeO3The BNT powder of (4).
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer at 1000 ℃ for 2h, and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(d) is an X-ray diffraction pattern of the ceramic powder of example 4, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-220 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 220 deg.C.
Example 5
Step 1, preparing 20g of 0.7Na0.5Bi0.5TiO3-0.3BiFeO3Powder obtained by calculating the following formulas (1) to (5), and weighing Bi with the purity of 98.5 percent2O312.6344g, Na2CO31.5351g, TiO24.7139g, Fe2O31.9984g, so that BNT and BiFeO3In a molar ratio of 70: 30.
Step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12h at the rotating speed of 300r/min, and drying the slurry to obtain the doped BiFeO3The BNT powder of (4).
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer for 2 hours at 1025 ℃ and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(e) is an X-ray diffraction pattern of the ceramic powder of example 5, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-220 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 220 deg.C.
Example 6
Step 1, preparing 20g of 0.6Na0.5Bi0.5TiO3-0.4BiFeO3Powder obtained by calculating the following formulas (1) to (5), and weighing Bi with the purity of 98.6 percent2O313.0610g, Na2CO31.2680g, TiO23.8784g, Fe2O3Is 25579g so that BNT reacts with BiFeO3In a molar ratio of 60: 40;
step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12 hours at a rotating speed of 250r/min, and drying the slurry to obtain the doped BiFeO3BNT powder;
step 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm;
step 4, preserving heat of the formed wafer for 2 hours at 1025 ℃ and sintering the wafer into porcelain;
and 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(f) is an X-ray diffraction pattern of the ceramic powder of example 6, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-220 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 220 deg.C.
Example 7
Step 1, preparing 20g of 0.5Na0.5Bi0.5TiO3-0.5BiFeO3Powder obtained by calculating the following formulas (1) to (5), and weighing Bi with the purity of 98.7 percent2O313.4564g, Na2CO31.0121g, TiO23.1079g, Fe2O33.0744g, so that BNT and BiFeO3In a molar ratio of 50: 50;
step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12h at the rotating speed of 400r/min, and drying the slurry to obtain the doped BiFeO3The BNT powder of (4).
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer for 2 hours at 1025 ℃ and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(g) is an X-ray diffraction pattern of the ceramic powder of example 7, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-280 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 280 deg.C.
Example 8
Step 1, preparing 20g of 0.4Na0.5Bi0.5TiO3-0.6BiFeO3Powder obtained by calculating the following formulas (1) to (5), and weighing Bi with the purity of 98.8 percent2O313.8210g, Na2CO30.7797g, TiO22.3941g, Fe2O33.5524g, so that BNT and BiFeO3In a molar ratio of 40: 60.
Step 2, using 85ml of alcohol as a medium in a planetary ball mill, carrying out ball milling for 12h at the rotating speed of 450r/min, and drying the slurry to obtain the doped BiFeO3The BNT powder of (4).
And 3, pressing the dried powder in a cold isostatic press for 5min under the pressure of 200MPa to form a wafer with the diameter of 10mm and the thickness of 1 mm.
And 4, preserving the heat of the formed wafer for 2 hours at 1025 ℃ and sintering the wafer into porcelain.
And 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol, and testing the piezoelectric property of the ceramic wafer by using a silver electrode.
FIG. 1(h) is an X-ray diffraction pattern of the ceramic powder of example 8, from which it can be seen that the sample shows a single perovskite phase without the occurrence of a second phase. FIG. 2 is a graph of the piezoelectric constant of the ceramic as a function of temperature at 30-300 deg.C, from which it can be seen that the maximum depolarization temperature of the ceramic can reach 300 deg.C.
The X-ray diffraction pattern of the ceramic powder prepared in examples 1 to 8 of the present invention is shown in fig. 1, wherein (a), (b), (c), (d), (e), (f), (g), and (h) correspond to XRD patterns obtained by weighing different components in examples 1# -8 #: the samples (a) to (h) in fig. 1 all present a single perovskite phase, with no second phase present;
the ceramics prepared in examples 1 to 8 of the present invention had piezoelectric constants with temperatureVariation diagram, as shown in FIG. 2, in which the abscissa represents temperature and the ordinate represents d corresponding to temperature33Values, where BNT represents the results of example 1, 0.95BNT-0.05BFO represents the results of example 2, 0.9BNT-0.1BFO represents the results of example 3, 0.8BNT-0.2BFO represents the results of example 4, 0.7BNT-0.3BFO represents the results of example 5, 0.6BNT-0.4BFO represents the results of example 6, 0.5BNT-0.5BFO represents the results of example 7, and 0.4BNT-0.6BFO represents the results of example 8. FIG. 2 is a graph showing the change of piezoelectric constant of the ceramic prepared by the present invention with temperature at 30-280 deg.C, and it can be seen from the graph that the maximum depolarization temperature of the ceramic prepared by the present invention can reach 280 deg.C. As can be seen from the graph of the piezoelectric constant of the ceramic in FIG. 2 at 30-220 ℃ as a function of temperature, the maximum depolarization temperature of the ceramic can reach 220 ℃.
BNT and BiFeO prepared by the invention3The molar ratio of (1) to (2) is 40:60, and the ceramic has a high depolarization temperature (300 ℃). The invention relates to a preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic, which obtains the sodium bismuth titanate based ceramic with higher piezoelectric constant and higher depolarization temperature through component design, and provides a good reference in the practical application field of piezoelectric materials for ultrasonic cleaning.

Claims (6)

1. A preparation method of sodium bismuth titanate based high-temperature piezoelectric ceramic comprises the following specific steps:
step 1, according to chemical formula xNa0.5Bi0.5TiO3-(1-x)BiFeO3Wherein x is 1, 0.95, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, or2O3、Na2CO3、TiO2And Fe2O3The powder is used as raw material for sintering ceramics, and calculated and weighed so that BNT and BiFeO3The molar ratio of (A) to (B) is 100: 0-40: 60;
step 2, using alcohol as a medium in a ball mill, and ball-milling and drying the slurry to obtain the doped BiFeO3BNT powder;
step 3, doping BiFeO obtained in the step 23Pressing the BNT powder into a wafer by an isostatic pressing technology;
step 4, sintering the wafer formed in the step 3 into a ceramic wafer;
and 5, polishing and washing the sintered ceramic wafer by using absolute ethyl alcohol to obtain the ceramic wafer.
2. The method for preparing sodium bismuth titanate-based high-temperature piezoelectric ceramic according to claim 1, wherein 20g of each powder is prepared in step 1, and the mole number N of each powder is:
Figure FDA0002352171900000011
bi for each component2O3The quality is as follows:
Figure FDA0002352171900000012
Na2CO3the quality is as follows:
Figure FDA0002352171900000021
TiO2the mass of the method is as follows:
Figure FDA0002352171900000022
Fe2O3the mass of the method is as follows:
Figure FDA0002352171900000023
calculating the obtained weight of each raw material according to the formula, drying the weighed raw materials in an oven for 12-24 hours to remove the water in the raw materials, and drying the dried raw materials respectively according to NBNT:NBFOPreparing materials according to the calculated molar ratio of 100:1, 95:5, 90:10, 80:20, 70:30, 60:40, 50:50 and 40: 60; weighing Bi2O311.1082～13.8210g，Na2CO32.5267～0.7797g，TiO27.6157～2.3941g，Fe2O30.3718-3.5224 g, BNT and BiFeO3The molar ratio of (A) to (B) is 100: 0-40: 60; the prepared raw materials are placed in a ball milling tank for ball milling.
3. The method for preparing sodium bismuth titanate-based high-temperature piezoelectric ceramic according to claim 1, wherein in the step 2, zirconia balls are used as grinding balls in a planetary ball mill, the ball milling is carried out at a rotating speed of 250-450 r/min for 12h, a filter screen is used for filtering out the grinding balls, the slurry of the mixed alcohol is placed into an air-blast drying oven at 80-100 ℃ for drying a ball milling medium, and the BiFeO doped high-temperature piezoelectric ceramic can be obtained after drying3The BNT dry powder of (3).
4. The method for preparing sodium bismuth titanate-based high-temperature piezoelectric ceramic according to claim 1, wherein in the step 3, a cold isostatic press is used to press the ceramic into a wafer with a diameter of 10mm and a thickness of 1mm at a pressure of 200MPa for 5 min.
5. The method for preparing sodium bismuth titanate-based high-temperature piezoelectric ceramic according to claim 1, wherein in the step 4, the formed wafer is sintered after being subjected to heat preservation at 1000-1100 ℃ for 2 h.
6. The method for preparing sodium bismuth titanate-based high-temperature piezoelectric ceramic according to claim 1, wherein Bi is added in the step 12O3、Na2CO3、TiO2And Fe2O3The purity is not less than 98.5%.
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