CN112054708B - Monopole boost inverter integrated with switched capacitor circuit - Google Patents

Monopole boost inverter integrated with switched capacitor circuit Download PDF

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CN112054708B
CN112054708B CN202010908304.3A CN202010908304A CN112054708B CN 112054708 B CN112054708 B CN 112054708B CN 202010908304 A CN202010908304 A CN 202010908304A CN 112054708 B CN112054708 B CN 112054708B
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capacitor
diode
cathode
anode
network
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CN112054708A (en
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丁新平
郝杨阳
李恺
李海滨
房成群
韦正怡
曹益畅
王凤莲
周明珠
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • H02M7/5395Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention belongs to the technical field of DC-AC conversion equipment, and relates to a monopole boosting inverter circuit of an integrated switch capacitor circuit, wherein an energy storage unit comprises a switch capacitor network and a quasi-Z source capacitor network, a switch module adopts a traditional inverter bridge, and the drain electrode of an upper bridge wall power switch tube is respectively connected with a second inductor and the anode of a second capacitor in the quasi-Z source network; the source electrode of the lower bridge arm power switch tube is respectively connected with the cathode of the direct current power supply, the cathode of the first capacitor in the quasi-Z source network and the cathode of the third capacitor in the switch capacitor network; the uncoupled inductance unit comprises a first inductance and a second inductance which are not coupled with each other; the circuit has the advantages of reasonable overall structural design, reliable electrical principle, safe use, environmental protection, simple operation, high power density and great application potential.

Description

Monopole boost inverter integrated with switched capacitor circuit
Technical Field
The invention belongs to the technical field of DC-AC conversion equipment, and relates to a monopole boosting inverter circuit integrated with a switched capacitor circuit.
Background
At present, the rapid development of renewable energy sources is promoted by the aggravation of energy crisis and environmental pollution problems. Solar energy has considerable development prospect as one of clean renewable energy sources. The traditional photovoltaic power generation system outputs the output voltage of the photovoltaic cells connected in series in multiple stages to a power grid by using a DC/AD inverter, but the multi-stage structure has higher production cost and failure rate. On the basis, a DC/DC boost converter is added between a photovoltaic cell and a power grid, boosting is completed first, and inversion is then performed, but the structure of the DC/DC-DC/AC can lead to the problems of complex system structure, low working efficiency and the like. The Z Source Inverter proposed by the document "Peng F Z.Z-Source Inverter [ J ]. IEEE Transactions on Industry Application,2003,39 (2): 504-510" is used as a novel single-stage buck-boost Inverter circuit to add a through signal to an inversion traditional zero state, and meanwhile, the boost and inversion functions are realized, and the Z Source Inverter has the advantages of simple circuit structure and high safety. However, the self topology structure of the Z source inverter reflects that the boosting capacity of the Z source inverter is limited, and the premise of obtaining high boosting is that the Z source inverter has higher through duty ratio, so that the modulation factor of the inverter is reduced, the reverse regulation function is realized, and the application range of the Z source inverter is limited. The transformer type Z source inverter (Trans-ZSI) proposed by the document power electronics,2011,26 (12) 3453-3463 replaces the energy storage inductor with the coupling inductor, realizes the dual-degree-of-freedom adjustment of the step-up ratio, and still can obtain a larger step-up ratio of the direct current chain by changing the turn ratio of the coupling inductor under the condition of smaller direct current duty ratio. On the basis, the inversion modulation factor is also larger, and higher inversion voltage gain can be obtained. But the high turns ratio of the coupling inductance can cause larger leakage inductance, series resistance and other bad parameters, so that the working efficiency is reduced, and the energy released by the leakage inductance can cause a large direct current chain voltage peak value, so that the inversion effect is poor, and the working performance of a circuit is influenced. The switched capacitor quasi-switched boost inverter proposed in document "Nguyen M K,Duong T D,Lim Y C,Kim Y G.Switched-Capacitor Quasi-Switched Boost Inverters[J]IEEE transactions on industrial electronics,2018,65(6):5105-5113.vol." achieves unipolar high boost without coupling inductance by introducing a switched capacitor structure, but the additional switching tubes introduced increase the converter cost and complexity of the control circuit.
In order to solve the problems, the multistage circuits can be used for cascading, and under the condition of smaller through duty ratio, higher voltage gain is obtained, but the number of components in the circuit is increased, the complexity of the circuit is improved, and the working efficiency is reduced. Therefore, finding an inverter circuit that can obtain higher voltage gain at a lower through duty ratio, has a simple structure, high working efficiency, and good inversion effect has become a research hotspot in the current field.
The invention comprises the following steps:
the invention aims to overcome the defects of the prior art, and designs a monopole boosting inverter integrated with a switched capacitor circuit, which can obtain higher voltage gain by utilizing smaller through duty ratio and larger modulation factor under the condition of no coupling inductance, and has the advantages of high working efficiency, low failure rate and good inversion effect of a topological circuit.
In order to achieve the above objective, the main structure of the unipolar boost inverter of the integrated switched capacitor circuit of the present invention includes a dc power supply, an energy storage unit, a non-coupling inductance unit and a switch module, wherein the switch module controls whether the dc power supply and the non-coupling inductance unit provide or stop providing energy to a load by switching on or off; the energy storage unit comprises a switch capacitor network and a quasi-Z source capacitor network, the switch module is a traditional inverter bridge and comprises six power switch tubes; the drain electrode of the upper bridge wall power switch tube is respectively connected with the second inductor and the anode of the second capacitor in the quasi-Z source network; the source electrode of the lower bridge arm power switch tube is respectively connected with the cathode of the direct current power supply, the cathode of the first capacitor in the quasi-Z source network and the cathode of the third capacitor in the switch capacitor network; the uncoupled inductance unit comprises a first inductance and a second inductance which are not coupled with each other, one end of the first inductance is connected with the positive electrode of the direct current power supply, and the other end of the first inductance is respectively connected with the anode of the second diode, the cathode of the fourth capacitor and the anode of the fourth diode in the switched capacitor network; one end of the second inductor is respectively connected with the cathode of the third diode in the switch capacitor network, the first diode in the quasi-Z source network and the anode of the first capacitor in the quasi-Z source network.
The switch capacitor network structure comprises a second diode, a third diode, a fourth diode, a fifth diode, a third capacitor and a fourth capacitor, wherein the anode of the second diode is connected with the first inductor, and the cathode of the second diode is connected with the cathode of the second capacitor; the anode of the third diode is connected with the cathode of the fifth diode and the anode of the fourth capacitor respectively, and the cathode is connected with the quasi-Z source network; the anode of the fourth diode is respectively connected with the cathodes of the first inductor, the second diode and the fourth capacitor, and the cathode is connected with the anode of the third capacitor and the anode of the fifth diode; the anode of the fifth diode is respectively connected with the cathode of the fourth diode and the anode of the third capacitor, and the cathode is respectively connected with the anode of the fourth capacitor and the anode of the third diode; the anode of the third capacitor is connected with the cathode of the fourth diode and the anode of the fifth diode respectively, and the cathode is connected with the cathode of the direct current power supply; the anode of the fourth capacitor is respectively connected with the cathode of the fifth diode and the anode of the third diode, and the cathode is respectively connected with the first inductor, the anode of the second diode and the anode of the fourth diode.
The quasi-Z source network consists of a first capacitor, a second capacitor and a first diode, wherein the anode of the first diode is respectively connected with the cathode of the second diode and the cathode of the second capacitor, and the cathode is respectively connected with the cathode of the third diode, the anode of the first capacitor and one end of the second inductor; the anode of the first capacitor is respectively connected with the cathode of the first diode, the cathode of the third diode and one end of the second inductor, and the cathode is connected with the cathode of the direct current power supply; the anode of the second capacitor is connected with the upper bridge arm of the inverter bridge and one end of the second inductor respectively, and the cathode of the second capacitor is connected with the anode of the first diode and the cathode of the second diode respectively.
The on/off of the switch module adopts a unipolar SPWM control mode, so that the working efficiency of the switch module can be improved, and the switching loss can be reduced.
The invention has two working states in a working period, namely, an inverter bridge is in a straight-through state, a fourth diode, a third diode and a first diode are reversely cut off, a second diode and a fourth diode are positively conducted, three main loops exist at the moment, a second capacitor discharges, and the second capacitor is connected with an input direct current power supply in series to form a first inductance energy storage; the third capacitor discharges, the fourth capacitor charges, and energy is transferred from the third capacitor to the fourth capacitor, so that a process of a voltage pump in the switch capacitor is realized; the first capacitor discharges to store energy for the second inductor; the second is that the inverter bridge is in a non-through state, the fourth diode, the third diode and the first diode are conducted in the forward direction, the second diode and the fourth diode are turned off in the reverse direction, the energy conduction process in the state is that the direct current power supply, the first inductor, the fourth capacitor, the third diode, the second inductor and the V PN are connected in series, the third capacitor is charged by the direct current power supply and the first inductor, the second capacitor is charged by the second inductor through the first diode, and meanwhile, the first capacitor is charged by the direct current power supply, the first inductor and the fourth capacitor in series.
Compared with the existing DC-AC boost converter, the DC-AC boost converter has the advantages that the switched capacitor structure is added on the basis of the original quasi-Z source inverter, the boosting effect is obviously improved through the principle of the voltage pump, the voltage gain is furthest improved under the condition that the coupling inductance and the additional switching tube are not added, the occurrence of the limit duty ratio condition is avoided, the function of wide-range voltage output under the condition of smaller duty ratio is realized, the electromagnetic interference is reduced, the working reliability of a circuit is improved, the volume and the weight of the magnetic core inductance are reduced under the condition of equal boosting capability, the voltage stress of elements is reduced, and the conversion efficiency and the power density of the converter are improved; the circuit has the advantages of reasonable overall structural design, reliable electrical principle, safe use, environmental protection, simple operation, high power density and great application potential.
Description of the drawings:
fig. 1 is a schematic diagram of the main circuit structure of the present invention.
Fig. 2 is a schematic diagram of the power switch of the present invention in a conducting state.
Fig. 3 is a schematic diagram of an off state of the power switch of the present invention.
The specific embodiment is as follows:
The invention will be further described with reference to the drawings and examples.
Example 1:
The schematic circuit diagram of the embodiment is shown in fig. 1, and the schematic circuit diagram comprises a direct current power supply V g, an energy storage unit, a non-coupling inductance unit and a switch module, wherein the switch module controls whether the direct current power supply V g and the non-coupling inductance unit provide or stop providing energy for a load through switching on or off; the energy storage unit comprises a switch capacitor network and a quasi-Z source capacitor network, the switch module is a traditional inverter bridge and comprises six power switch tubes S 1-S6 for changing the working state of the converter, wherein the drain electrode of an upper bridge wall power switch tube S 1-S3 is respectively connected with a second inductor L 2 and the anode of a second capacitor C 2 in the quasi-Z source network; the source electrode of the lower bridge arm power switch tube S 4-S6 is respectively connected with the negative electrode of the direct-current power supply V g, the cathode of the first capacitor C 1 in the quasi-Z source network and the cathode of the third capacitor C 3 in the switch capacitor network; the uncoupled inductance unit comprises a first inductance L 1 and a second inductance L 2 which are not coupled with each other, one end of the first inductance L 1 is connected with the positive electrode of the direct current power supply V g, and the other end of the first inductance L 1 is respectively connected with the anode of the second diode D 2, the cathode of the fourth capacitor C 4 and the anode of the fourth diode D 4 in the switched capacitor network; one end of the second inductor L 2 is respectively connected with the cathode of the third diode D 3 in the switch capacitor network, the first diode D 1 in the quasi-Z source network and the anode of the first capacitor C 1 in the quasi-Z source network, and the uncoupled inductor unit improves the voltage gain through the voltage pump technology of the switch capacitor, so that the situation of limit duty ratio of the converter is avoided, and the conduction and the switching loss of the switch tube can be reduced.
The switched capacitor network structure in this embodiment is composed of four diodes D 2-D5 and two capacitors C 3、C4, where the anode of the second diode D 2 is connected to the first inductor L 1, and the cathode is connected to the cathode of the second capacitor C 2; the anode of the third diode D 3 is respectively connected with the cathode of the fifth diode D 5 and the anode of the fourth capacitor C 4, and the cathode is connected with the quasi-Z source network; the anode of the fourth diode D 4 is respectively connected with the cathodes of the first inductor L 1, the second diode D 2 and the fourth capacitor C 4, and the cathode is connected with the anode of the third capacitor C 3 and the anode of the fifth diode D 5; the anode of the fifth diode D 5 is respectively connected with the cathode of the fourth diode D 4 and the anode of the third capacitor C 3, and the cathode is respectively connected with the anode of the fourth capacitor C 4 and the anode of the third diode D 3; the anode of the third capacitor C 3 is connected with the cathode of the fourth diode D 4 and the anode of the fifth diode D 5 respectively, and the cathode is connected with the cathode of the direct current power supply V g; the anode of the fourth capacitor C 4 is connected to the cathode of the fifth diode D 5 and the anode of the third diode D 3, respectively, and the cathode is connected to the first inductor L 1, the anode of the second diode D 2, and the anode of the fourth diode D 4, respectively.
The quasi-Z source network in this embodiment is composed of two capacitors C 1、C2 and a diode D 1, where the anode of the first diode D 1 is connected to the cathode of the second diode D 2 and the cathode of the second capacitor C 2, respectively, and the cathode is connected to the cathode of the third diode D 3, the anode of the first capacitor C 1, and one end of the second inductor L 2, respectively; the anode of the first capacitor C 1 is respectively connected with the cathode of the first diode D 1, the cathode of the third diode D 3 and one end of the second inductor L 2, and the cathode is connected with the cathode of the direct current power supply V g; the anode of the second capacitor C 2 is connected with the upper bridge arm of the inverter bridge and one end of the second inductor L 2 respectively, and the cathode is connected with the anode of the first diode D 1 and the cathode of the second diode D 2 respectively.
The diode D 1~D5 in this embodiment is a fast recovery diode, which is a semiconductor diode with good switching characteristics and short reverse recovery time, and the internal structure of the fast recovery diode is different from that of a common PN junction diode, and belongs to a PIN junction diode, that is, a base region I is added between a P-type silicon material and an N-type silicon material to form a PIN silicon wafer.
The on or off of the switch module in this embodiment adopts an SPWM control method, which includes a bipolar SPWM control method and a unipolar control method. Compared with a unipolar mode, the bipolar SPWM mode control circuit and the main circuit are simpler, but the unipolar SPWM mode is much smaller than the harmonic component in the output voltage of the bipolar SPWM mode, and the switching-on or switching-off of the switching module is realized by adopting the unipolar SPWM control method, so that the working efficiency of the switching module can be improved, and the switching loss is reduced.
The working state of this embodiment is schematically shown in fig. 2 and 3. In a working period, two working states are shared, a working state schematic diagram in a straight-through state is shown in fig. 2, a fourth diode D 4, a third diode D 3 and a first diode D 1 are reversely cut off, a second diode D 2 and a fourth diode D 4 are positively conducted, three main loops exist at the moment, a second capacitor C 2 is discharged, and the second capacitor C 2 is connected with an input direct current power supply in series to store energy for a first inductor L 1; the third capacitor C 3 is discharged, the fourth capacitor C 4 is charged, and energy is transferred from the third capacitor C 3 to the fourth capacitor C 4, so that a process of switching a voltage pump in the capacitor is realized; the first capacitor C 1 discharges to store energy for the second inductor L 2; fig. 3 is a working state in a non-through state, the fourth diode D 4, the third diode D 3 and the first diode D 1 are forward-turned on, the second diode D 2 and the fourth diode D 4 are reverse-turned off, in which the energy conducting process is that the dc power V g -the first inductor L 1 -the fourth capacitor C 4 -the third diode D 3 -the second inductor L 2-VPN, the dc power V g and the first inductor L 1 are connected in series to charge the third capacitor C 3, the second inductor L 2 charges the second capacitor C 2 through the first diode D 1, and meanwhile, the dc power V g, the first inductor L 1 and the fourth capacitor C 4 are connected in series to charge the first capacitor C 1.
The topology structure of the inverter in this embodiment has two working modes in a specific working process:
When the mode one, i.e. the inverter bridge is in the pass-through state, the KVL law of the circuit is as follows:
When the mode two, i.e. the inverter bridge is in a non-straight-through state, the KVL law of the circuit is as follows:
The expression of the output DC bus voltage is obtained by utilizing the volt-second balance rule of the first inductance L 1 and the second inductance L 2:
wherein B is the voltage gain of the converter and D sh is the duty cycle.
Example 2:
in this embodiment, when the output voltage is required to be converted into 3.63 times of the input voltage, if the output voltage expression of the conventional quasi-Z source topology is:
The duty ratio of the inverter bridge switching tube is limited by the modulation ratio, so that the duty ratio of the inverter bridge switching tube is in a limit state, the working efficiency and the quality of output waveforms are affected, and related devices are greatly damaged;
when the converter gain expression is proposed according to the present embodiment:
When the through duty cycle is 0.15, the output requirement can be met. Therefore, compared with the original quasi-Z source topology, the embodiment can realize the output of a wide range of voltage, avoid the occurrence of the limit duty ratio, effectively improve the working efficiency of the topology and reduce the loss of each device.
While the foregoing description of the embodiments of the present invention has been presented in conjunction with the drawings, it should be understood that it is not intended to limit the scope of the invention, but rather, it is intended to cover all modifications or variations within the scope of the invention as defined by the claims of the present invention.

Claims (2)

1. The unipolar boost inverter integrated with the switch capacitor circuit is characterized in that the main structure comprises a direct current power supply, an energy storage unit, a non-coupling inductance unit and a switch module, and the switch module controls whether the direct current power supply and the non-coupling inductance unit provide or stop providing energy for a load through switching on or off; the energy storage unit comprises a switch capacitor network and a quasi-Z source capacitor network, the switch module is a traditional inverter bridge, and the drain electrode of an upper bridge wall power switch tube of the inverter bridge is respectively connected with the second inductor and the anode of a second capacitor in the quasi-Z source network; the source electrode of the lower bridge arm power switch tube is respectively connected with the cathode of the direct current power supply, the cathode of the first capacitor in the quasi-Z source network and the cathode of the third capacitor in the switch capacitor network; the uncoupled inductance unit comprises a first inductance and a second inductance which are not coupled with each other, one end of the first inductance is connected with the positive electrode of the direct current power supply, and the other end of the first inductance is respectively connected with the anode of the second diode, the cathode of the fourth capacitor and the anode of the fourth diode in the switched capacitor network; one end of the second inductor is respectively connected with the cathode of the third diode in the switch capacitor network, the first diode in the quasi-Z source network and the anode of the first capacitor in the quasi-Z source network;
The switch capacitor network structure consists of a second diode, a third diode, a fourth diode, a fifth diode, a third capacitor and a fourth capacitor, wherein the anode of the second diode is connected with the first inductor, and the cathode of the second diode is connected with the cathode of the second capacitor; the anode of the third diode is connected with the cathode of the fifth diode and the anode of the fourth capacitor respectively, and the cathode is connected with the quasi-Z source network; the anode of the fourth diode is respectively connected with the anode of the first inductor, the anode of the second diode and the cathode of the fourth capacitor, and the cathode is connected with the anode of the third capacitor and the anode of the fifth diode; the anode of the fifth diode is respectively connected with the cathode of the fourth diode and the anode of the third capacitor, and the cathode is respectively connected with the anode of the fourth capacitor and the anode of the third diode; the anode of the third capacitor is connected with the cathode of the fourth diode and the anode of the fifth diode respectively, and the cathode is connected with the cathode of the direct current power supply; the anode of the fourth capacitor is respectively connected with the cathode of the fifth diode and the anode of the third diode, and the cathode is respectively connected with the first inductor, the anode of the second diode and the anode of the fourth diode;
The quasi-Z source network consists of a first capacitor, a second capacitor and a first diode, wherein the anode of the first diode is respectively connected with the cathode of the second diode and the cathode of the second capacitor, and the cathode is respectively connected with the cathode of the third diode, the anode of the first capacitor and one end of the second inductor; the anode of the first capacitor is respectively connected with the cathode of the first diode, the cathode of the third diode and one end of the second inductor, and the cathode is connected with the cathode of the direct current power supply; the anode of the second capacitor is connected with the upper bridge arm of the inverter bridge and one end of the second inductor respectively, and the cathode of the second capacitor is connected with the anode of the first diode and the cathode of the second diode respectively.
2. The single pole boost inverter of claim 1, wherein the switching module is turned on or off by a unipolar SPWM control scheme.
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