CN112039603B - Secret transmission system, method and chip - Google Patents
Secret transmission system, method and chip Download PDFInfo
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- CN112039603B CN112039603B CN201910475218.5A CN201910475218A CN112039603B CN 112039603 B CN112039603 B CN 112039603B CN 201910475218 A CN201910475218 A CN 201910475218A CN 112039603 B CN112039603 B CN 112039603B
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000001914 filtration Methods 0.000 claims abstract description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
- H04B10/85—Protection from unauthorised access, e.g. eavesdrop protection
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/90—Non-optical transmission systems, e.g. transmission systems employing non-photonic corpuscular radiation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Computer Security & Cryptography (AREA)
- Optics & Photonics (AREA)
- Optical Communication System (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The application provides a secure transmission system, a secure transmission method and a secure transmission chip. In encryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip, the terahertz waves are transmitted to the terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip, and information encryption is achieved; during decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip, the laser transmitting source transmits laser to the terahertz chip, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering by the terahertz chip, so that information decryption is realized. The terahertz chip comprises a substrate and a two-dimensional array on the top surface of the substrate, and is attached with an information board; the two-dimensional array is composed of a periodically arranged unit structure. The unit structure comprises a metal structure main body, a groove is formed on the metal structure, and a metal block and a semiconductor material block which are symmetrical with each other about the central line of the metal structure are also arranged in the groove. The terahertz wave band-pass filter device utilizes the terahertz chip to carry out band-pass filtering on the terahertz wave, and realizes convenient secret transmission.
Description
Technical Field
The present invention relates to the field of information transmission, and in particular, to a secure transmission system, method and chip.
Background
With the continuous development of information society, more and more information needs to be transmitted nowadays, however, the information of users is often attacked in the transmission process, so that the information of users is revealed, and irreparable losses are generated. Therefore, there is an increasing concern about security and privacy issues of information networks. At present, most of information security technologies adopt cryptography based on mathematical theory, however, such methods have certain limitations and are often subject to attacks. The new encryption method, namely optical information encryption, is based on cryptography in optical theory, has the characteristics of low cost, high speed, high safety and the like, and greatly improves the high efficiency and confidentiality of information transmission. The existing optical information encryption method generally adopts a double random phase coding system, but components are numerous, and an optical path is complex.
Disclosure of Invention
The invention aims to provide a secret transmission system, a secret transmission method and a secret transmission chip, which reduce the complexity of the secret transmission system and realize a more convenient secret transmission process.
The technical scheme provided by the invention is as follows:
The invention provides a secure transmission system, comprising: an encryption unit and a decryption unit; the encryption unit comprises a terahertz wave transmitting source, a terahertz chip, an information board and a terahertz wave receiver; the information board is attached to the terahertz chip; in encryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, and the terahertz waves are transmitted to the terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip attached with the information board, so that information encryption is realized; the decryption unit comprises the terahertz wave emission source, the terahertz chip, the information board, the terahertz wave receiver and a laser emission source; during decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, the laser transmitting source transmits laser to the terahertz chip attached with the information board, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering through the terahertz chip attached with the information board, so that information decryption is realized.
In one embodiment, the terahertz chip includes a substrate and a two-dimensional array of substrate top surfaces; the two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer.
In one embodiment, the cell structure comprises: the metal structure comprises a square metal structure main body and a square annular groove formed on the metal structure, wherein the groove is symmetrical about the central line of the metal structure; and the grooves are also internally provided with metal blocks and semiconductor material blocks which are symmetrical with respect to the central line of the metal structure, and the heights of the upper surfaces of the metal structure, the metal blocks and the semiconductor material blocks are equal.
In one embodiment, the side length of the metal structural body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length is 15-360 um, the width of the metal block is 1-20 um, the length is 2-50 um, the thickness is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length is 4-100 um, and the thickness is 0.1-5 um.
In one embodiment, the substrate is a sapphire substrate.
The invention also provides a secret transmission method, which comprises the following steps: an encryption process and a decryption process; in encryption, a terahertz wave transmitting source transmits terahertz waves to a terahertz chip attached with an information board, the terahertz waves are transmitted to a terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip attached with the information board, and information encryption is achieved; during decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, the laser transmitting source transmits laser to the terahertz chip attached with the information board, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering through the terahertz chip attached with the information board, so that information decryption is realized.
The invention also provides a chip for secret transmission, which is used for secret transmission by using terahertz waves; the chip comprises a substrate and a two-dimensional array on the top surface of the substrate; the two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer; the unit structure includes: the metal structure comprises a square metal structure main body and a square annular groove formed on the metal structure, wherein the groove is symmetrical about the central line of the metal structure; and the grooves are also internally provided with metal blocks and semiconductor blocks which are symmetrical with respect to the central line of the metal structure, and the heights of the upper surfaces of the metal structure, the metal blocks and the semiconductor blocks are equal.
In one embodiment, the side length of the metal structural body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length is 15-360 um, the width of the metal block is 1-20 um, the length is 2-50 um, the thickness is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length is 4-100 um, and the thickness is 0.1-5 um.
In one embodiment, the substrate is a sapphire substrate.
The invention also provides a method for carrying out secret transmission by applying the chip, wherein the chip is attached with an information board; in encryption, the chip receives the terahertz waves transmitted by the terahertz wave transmitting source, performs low-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to complete information encryption; and in decryption, the chip receives the terahertz waves emitted by the terahertz wave emitting source and the laser emitted by the laser emitting source, performs high-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to finish information decryption.
The secret transmission system, the secret transmission method and the secret transmission chip provided by the invention have at least one of the following beneficial effects:
The application provides a novel encryption means, the complexity of the system is low, and simpler encryption transmission can be realized.
The physical mechanism of the resonance response of the metamaterial and the terahertz waves in the two-dimensional array of the terahertz chips is simple and clear, and the terahertz chips working at specific frequencies are easy to design by utilizing the relation between the resonance response frequency and the structural size of the metamaterial. The structure selected by the application is not too complex, the feasibility is high, the selection of materials is practical, the preparation is easy, and the mass production can be realized. In addition, the terahertz wave is filtered through the terahertz chip, so that the stability of the system is improved, specific encryption requirements can be met, and the practicability of terahertz secret communication is promoted.
Drawings
The above features, technical features, advantages and implementation manners of a secure transmission system, method and chip will be further described in the following description of the preferred embodiments with reference to the accompanying drawings in a clearly understandable manner.
FIG. 1 is a schematic optical path diagram of a secure transmission system in one embodiment of the invention;
FIG. 2 is a two-dimensional schematic of a cell structure in one embodiment of the invention;
FIG. 3 is a three-dimensional schematic of a cell structure in one embodiment of the invention;
FIG. 4 is a spectral plot of the frequency domain of transmittance in one embodiment of the invention;
FIG. 5 is a top view of a cell structure in one embodiment of the invention;
FIG. 6 is a periodic layout of a cell structure in one embodiment of the invention.
Reference numerals illustrate:
The device comprises an 11-terahertz wave emission source, a 12-terahertz chip, a 13-terahertz wave receiver, a 14-laser emission source, a 15-information board, a 1-metal structure, a 2-semiconductor material block, a 3-metal block, a 4-groove and a 5-substrate.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will explain the specific embodiments of the present invention with reference to the accompanying drawings. It is evident that the drawings in the following description are only examples of the invention, from which other drawings and other embodiments can be obtained by a person skilled in the art without inventive effort.
For the sake of simplicity of the drawing, the parts relevant to the present invention are shown only schematically in the figures, which do not represent the actual structure thereof as a product. Additionally, in order to simplify the drawing for ease of understanding, components having the same structure or function in some of the drawings are shown schematically with only one of them, or only one of them is labeled. Herein, "a" means not only "only this one" but also "more than one" case.
The present invention provides an embodiment of a secure transmission system, as shown in fig. 1, comprising: an encryption unit and a decryption unit;
the encryption unit comprises a terahertz wave transmitting source 11, a terahertz chip 12, an information board 15 and a terahertz wave receiver 13; the information board 15 is attached to the terahertz chip 12;
in encryption, the terahertz wave transmitting source 11 transmits terahertz waves to the terahertz chip 12 attached with the information board 15, and the terahertz waves are transmitted to the terahertz wave receiver 13 after being subjected to low-frequency filtering by the terahertz chip 12 attached with the information board 15, so that information encryption is realized;
The decryption unit includes the terahertz wave emission source 11, the terahertz chip 12, the information plate 15, the terahertz wave receiver 13, and a laser emission source 14;
In decryption, the terahertz wave transmitting source 11 transmits terahertz waves to the terahertz chip 12 attached with the information board 15, the laser transmitting source 14 transmits laser light to the terahertz chip 12 attached with the information board 15, and the terahertz waves and the laser light are transmitted to the terahertz wave receiver 13 after being subjected to high-frequency filtering by the terahertz chip 12 attached with the information board 15, so that information decryption is realized.
Specifically, in the encryption process, when only the terahertz wave beam is transmitted to the terahertz chip 12, the terahertz chip 12 forms a low-frequency-band dual-band filter, the transmitted terahertz wave frequency is low, the wavelength is longer, and the resolution of the transmitted image is low according to the Rayleigh Li Panju, so that the image information is blurred, and encryption is realized; in the decryption process, when the terahertz wave beam and the laser beam are simultaneously applied to the terahertz chip 12, a silicon area on the terahertz chip 12 can generate photo-generated carriers, so that the resonance frequency of the metamaterial moves to high frequency, a single band-pass filter with a high frequency band is formed, the transmitted terahertz wave frequency is high, the wavelength is short, and the resolution of the transmitted image is high according to the Rayleigh criterion, so that the image information is clear, and decryption is realized. The secret transmission system provided by the application can reduce the complexity of the system and simplify the encryption transmission of information.
The present invention provides another embodiment of a secure transmission system, the system comprising: an encryption unit and a decryption unit;
the encryption unit comprises a terahertz wave transmitting source 11, a terahertz chip 12, an information board 15 and a terahertz wave receiver 13; the information board 15 is attached to the terahertz chip 12;
The decryption unit includes the terahertz wave emission source 11, the terahertz chip 12, the information plate 15, the terahertz wave receiver 13, and a laser emission source 14;
Preferably, as shown in fig. 2, the terahertz chip 12 includes a substrate and a two-dimensional array of substrate top surfaces; optionally, the substrate is a sapphire substrate. The two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer. Preferably, N is greater than or equal to 70, m is greater than or equal to 50, in this embodiment n=70, m=50,
The unit structure includes: the square metal structure main body can be a metal structure taking metal aluminum, silver, gold and the like as main bodies or other metal structures capable of realizing the same function, and square annular grooves are formed on the metal structure, and the grooves are symmetrical about the central line of the metal structure; and a metal block and a semiconductor material block which are symmetrical with respect to the central line of the metal structure are also arranged in the groove, and the metal structure and the metal block can be made of aluminum, silver or gold or other metals capable of realizing the same function. The block of semiconductor material may be a block of silicon, or germanium, or other semiconductor or denatured material.
The metal structure, the metal block and the upper surface of the semiconductor material block are equal in height. In this embodiment, as shown in fig. 2 and 3, the metal structure is an aluminum structure, the metal block is an aluminum block, the semiconductor material block is a silicon block, for example, as shown in fig. 2,1 and 5 are metal structures, 2 is a silicon block, 3 is an aluminum block, and 4 is a groove. In this embodiment, the side length of the square of the unit structure is 17-425 um, and the two-dimensional array is a square with side length of 1cm×1 cm. The side length of the metal structure main body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length of the groove is 15-360 um, the width of the aluminum block is 1-20 um, the length of the aluminum block is 2-50 um, the thickness of the aluminum block is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length of the semiconductor material block is 4-100 um, and the thickness of the semiconductor material block is 0.1-5 um.
The above-mentioned length can be set according to the cell structure as shown in fig. 2, for example, in one embodiment, the metal structure in fig. 2 is symmetrical about the lateral center line of the cell structure, for example: the side length a is 85um, the outer side length b of the groove is 80um, the inner side length c is 72um, the depth of the groove is 0.5um, the silicon block is a three-dimensional structure with 20um, 4um and 0.5um of transverse rectangular long side d symmetrical about the vertical central line of the unit structure. The aluminum block is a three-dimensional structure with a longitudinal side f of 10um, a short side e of 4um and a thickness of 0.5um, which are equally symmetrical with respect to the vertical central line of the unit structure. The thickness h of the sapphire substrate is 460-1000 um, the top surface of the sapphire substrate is square with the side length of 1cm multiplied by 1cm, and the center of the sapphire substrate coincides with the center of the two-dimensional array. The length is not limited in this embodiment, and it is within the scope of the present application to meet the above-mentioned length.
And a three-dimensional coordinate system is established by taking a transverse bisector of the two-dimensional array as a Y-axis direction, a longitudinal bisector as an X-axis direction and a direction perpendicular to a plane formed by X, Y axes as a Z-axis direction, terahertz waves emitted by the terahertz wave emitting source 11 are polarized along the Y-axis direction and propagate along a light path in the Z-axis direction, and are transmitted through the terahertz chip 12 to reach a terahertz wave receiver 13 at the other side. The two-dimensional array of the terahertz wave encoder is positioned facing the terahertz wave transmitting source 11, and the irradiation area of the terahertz waves at least covers 1000 unit structures on the two-dimensional array; the transverse bisector of the two-dimensional array is parallel to the Y axis, the longitudinal bisector is parallel to the X axis, and the longitudinal bisector and the transverse bisector of the two-dimensional array intersect at the three-dimensional coordinate origin. The laser emission source 14 is disposed outside the terahertz wave path, the laser emission source 14 emits parallel light, the parallel light irradiates the surface of the two-dimensional array of the terahertz chip 12, and the intersection angle θ between the laser light path and the terahertz wave path is 0-45 °. The laser irradiation region covers an irradiation region of the terahertz wave. The laser power of the laser emission source 14 is 30 milliwatts or more.
After a terahertz secret chip and a secret transmission system are designed, simulation software is used for simulating the system. By modifying the conductivity of silicon to simulate the conductivity change caused after laser irradiation, fig. 4 shows a spectral plot of the transmittance frequency domain at conductivities of 0 and 300000S/m.
As is clear from fig. 4, the abscissa indicates frequency, the ordinate indicates transmittance, the solid line indicates a curve at the time of encryption, and the broken line indicates a curve at the time of decryption. When the terahertz wave irradiates the chip, the silicon block and the aluminum block are not conducted, so that the whole groove is not conducted, the transmissivity of frequencies about 0.2THz and about 0.6THz is the highest, the transmissivity of a high-frequency band is low, a low-frequency dual-band-pass filter is formed, the transmitted terahertz wave band is low in frequency and long in wavelength, the resolution of an image is low according to a Rayleigh criterion, and therefore the image information is fuzzy, and an image attached to the chip cannot be completely transmitted into the terahertz wave receiver 13, and the image is in an encrypted state at the moment; when terahertz waves and laser beams are irradiated onto the terahertz chip 12 at the same time, silicon is conducted to generate photo-generated carriers, at the moment, the conductivity changes, the electromagnetic characteristics of the photo-generated carriers change, so that the resonance frequency of the terahertz chip 12 moves to high frequency, the frequency transmittance of about 0.9THz is highest, the transmittance of a low-frequency band is low, a single high-frequency band-pass filter is formed, the transmitted terahertz wave band is high in frequency and short in wavelength, the resolution of an image is high according to a Rayleigh criterion, and therefore the image information is clear, and the image attached to the chip can be completely transmitted into the terahertz wave receiver 13 and is in a decrypted state at the moment.
According to the invention, the physical mechanism of the resonance response of the metamaterial and the terahertz waves in the two-dimensional array of the terahertz chip 12 is simple and clear, and the terahertz chip 12 working at a specific frequency is easy to design by utilizing the relation between the resonance response frequency and the structural size of the metamaterial. The terahertz chip 12 has the advantages of low structural complexity, high feasibility, material selection, easy preparation and mass production. In addition, the system provided by the invention not only reduces the complexity of the existing secret system and improves the stability of the system, but also can meet specific encryption requirements and promote the practicability and commercialization of terahertz secret communication.
The invention also provides an embodiment of a secure transmission method, comprising: an encryption process and a decryption process;
In encryption, a terahertz wave transmitting source transmits terahertz waves to a terahertz chip attached with an information board, the terahertz waves are transmitted to a terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip attached with the information board, and information encryption is achieved;
During decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, the laser transmitting source transmits laser to the terahertz chip attached with the information board, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering through the terahertz chip attached with the information board, so that information decryption is realized.
Specifically, in the encryption process, when only terahertz wave beams are transmitted to the terahertz chip, the terahertz chip can form a low-frequency-band dual-band filter, the transmitted terahertz wave frequency is low, the wavelength is longer, and the resolution of the transmitted image is low according to Li Panju, so that the image information is blurred, and encryption is realized; in the decryption process, when terahertz wave beams and laser beams are simultaneously hit on a terahertz chip, a silicon area on the terahertz chip can generate photo-generated carriers, so that the resonance frequency of the metamaterial moves to high frequency, a single band-pass filter with a high frequency band is formed, the transmitted terahertz wave frequency is high, the wavelength is short, and the resolution of a transmitted image is high according to a Rayleigh criterion, so that the image information is clear, and decryption is realized. The secret transmission system provided by the application can reduce the complexity of the system and simplify the encryption transmission of information.
The invention also provides an embodiment of a secret transmission chip, which is used for secret transmission by using terahertz waves; the chip comprises a substrate and a two-dimensional array on the top surface of the substrate; the two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer; the unit structure includes: the metal structure comprises a square metal structure main body and a square annular groove formed on the metal structure, wherein the groove is symmetrical about the central line of the metal structure; and a metal block and a semiconductor material block which are symmetrical with respect to the central line of the metal structure are also arranged in the groove. The metal structure, the metal block and the upper surface of the semiconductor material block are equal in height. The metal structure and the metal block can be made of aluminum, silver or gold or other metals capable of achieving the same functions. The block of semiconductor material may be a block of silicon, or germanium, or other semiconductor or denatured material.
Optionally, the side length of the metal structural body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length is 15-360 um, the width of the metal block is 1-20 um, the length is 2-50 um, the thickness is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length is 4-100 um, and the thickness is 0.1-5 um.
The invention also provides an embodiment of the secure transmission chip, which consists of a sapphire substrate and a metamaterial on the top surface of the sapphire, wherein the metamaterial is a two-dimensional array. The top surface of the sapphire is square with the side length of 1cm multiplied by 1cm, and the thickness of the sapphire is 460-1000 um. The two-dimensional array is composed of N x M square unit structures which are arranged periodically. N is an integer not less than 70, M is an integer not less than 50. Each cell structure is composed of a metal structure with recesses filled with metal blocks and semiconductor material blocks. The upper surface of the groove and the upper surface of the metal structure are positioned on the same horizontal plane of the sapphire top layer. The lower surfaces of the recess and the filled metal block and semiconductor material block are also at the same level.
In one embodiment, the metal structure may be an aluminum structure, the metal block is an aluminum block, the semiconductor material block is a silicon block, and the upper surface of the aluminum structure is composed of left and right vertical rectangles of which the symmetric length and width are 85um and 2.5um respectively with respect to a horizontal center line of the unit structure, upper and lower horizontal rectangles of which the symmetric length and width are 80um and 2.5um respectively with respect to the vertical center line of the unit structure, and a square of which the symmetric side length is 72um with respect to the vertical center line of the unit structure. The upper surface of the groove is composed of two left transverse rectangles with the length and width of 30um and 4um respectively, a left vertical rectangle with the length and width of 72um and 4um connecting the two transverse rectangles, two right transverse rectangles with the length and width of 30um and 4um respectively and a right vertical rectangle with the length and width of 72um and 4um connecting the two right transverse rectangles. The upper surface of the silicon block is a transverse rectangle with the symmetrical length and width of 20um and 4um respectively about the vertical central line of the unit structure. The aluminum block is a transverse rectangle with the length and width of 10um and 4um respectively about the vertical central line of the unit structure in a bisection and symmetry mode. The thickness of the aluminum structure is 0.5um, the thickness of the silicon block is 0.5um, and the thickness of the aluminum block is also 0.5um.
In one embodiment, 1,5 is an aluminum structure, 2 is a silicon block, 3 is an aluminum block, and 4 is a groove, as shown in fig. 2. The upper surface of the aluminum structure is formed by a vertical rectangle with a long side a of 85um and symmetrical with respect to the transverse center line of the unit structure, a transverse rectangle with a long side b of 80um and symmetrical with respect to the vertical center line of the unit structure, and a square with a side length c of 72um and symmetrical with respect to the vertical center line of the unit structure. The upper surface of the groove is formed by a left transverse rectangle with a long side g of 30um, a short side e of 4um and symmetrical to the vertical central line of the unit structure, a long side c of 72um, a left vertical rectangle with a short side e of 4um, a right transverse rectangle with a short side e of 30um and symmetrical to the vertical central line of the unit structure, a c of 72um and a right vertical rectangle with a short side e of 4 um. The upper surface of the silicon block is a transverse rectangle with a long side d of 20um and a short side e of 4um which is symmetrical with respect to the vertical central line of the unit structure. The upper surface of the aluminum block is a transverse rectangle with a long side f of 10um and a short side e of 4um which is equally symmetrical with respect to the vertical central line of the unit structure.
The invention also provides an embodiment of a secret transmission method, when encryption is carried out, the chip receives the terahertz waves transmitted by the terahertz wave transmitting source, carries out low-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to complete information encryption;
And in decryption, the chip receives the terahertz waves emitted by the terahertz wave emitting source and the laser emitted by the laser emitting source, performs high-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to finish information decryption.
According to the invention, the physical mechanism of the resonance response of the metamaterial and the terahertz wave in the two-dimensional array of the terahertz chip is simple and clear, and the terahertz chip working at a specific frequency is easy to design by utilizing the relation between the resonance response frequency and the structural size of the metamaterial. The terahertz chip has the advantages of low structural complexity, high feasibility, material selection, easy preparation and mass production. In addition, the system provided by the invention not only reduces the complexity of the existing secret system and improves the stability of the system, but also can meet specific encryption requirements and promote the practicability and commercialization of terahertz secret communication.
It should be noted that the above embodiments can be freely combined as needed. The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (7)
1. A secure transmission system, comprising: an encryption unit and a decryption unit;
The encryption unit comprises a terahertz wave transmitting source, a terahertz chip, an information board and a terahertz wave receiver; the information board is attached to the terahertz chip;
in encryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, and the terahertz waves are transmitted to the terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip attached with the information board, so that information encryption is realized;
the decryption unit comprises the terahertz wave emission source, the terahertz chip, the information board, the terahertz wave receiver and a laser emission source;
In decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, the laser transmitting source transmits laser to the terahertz chip attached with the information board, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering by the terahertz chip attached with the information board, so that information decryption is realized;
The terahertz chip comprises a substrate and a two-dimensional array of the top surface of the substrate;
the two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer;
The unit structure includes: the metal structure comprises a square metal structure main body and a square annular groove formed on the metal structure, wherein the groove is symmetrical about the central line of the metal structure; the grooves are also internally provided with metal blocks and semiconductor material blocks which are symmetrical with respect to the central line of the metal structure, and the heights of the upper surfaces of the metal structure, the metal blocks and the semiconductor material blocks are equal;
the substrate is a sapphire substrate.
2. The system according to claim 1, wherein:
The side length of the metal structure main body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length of the groove is 15-360 um, the width of the metal block is 1-20 um, the length of the metal block is 2-50 um, the thickness of the metal block is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length of the semiconductor material block is 4-100 um, and the thickness of the semiconductor material block is 0.1-5 um.
3. A secure transmission method applied to the secure transmission system according to claim 1, comprising: an encryption process and a decryption process;
In encryption, a terahertz wave transmitting source transmits terahertz waves to a terahertz chip attached with an information board, the terahertz waves are transmitted to a terahertz wave receiver after being subjected to low-frequency filtering by the terahertz chip attached with the information board, and information encryption is achieved;
During decryption, the terahertz wave transmitting source transmits terahertz waves to the terahertz chip attached with the information board, the laser transmitting source transmits laser to the terahertz chip attached with the information board, and the terahertz waves and the laser are transmitted to the terahertz wave receiver after being subjected to high-frequency filtering through the terahertz chip attached with the information board, so that information decryption is realized.
4. A secure transmission chip applied to the secure transmission system according to claim 1, wherein the chip is for secure transmission using terahertz waves; the chip comprises a substrate and a two-dimensional array on the top surface of the substrate;
the two-dimensional array consists of N multiplied by M square unit structures which are arranged periodically, and N, M is a positive integer;
The unit structure includes: the metal structure comprises a square metal structure main body and a square annular groove formed on the metal structure, wherein the groove is symmetrical about the central line of the metal structure; and a metal block and a semiconductor material block which are symmetrical with respect to the central line of the metal structure are also arranged in the groove.
5. The chip of claim 4, wherein:
The side length of the metal structure main body is 17-425 um, the outer side length of the groove is 16-400 um, the inner side length of the groove is 15-360 um, the width of the metal block is 1-20 um, the length of the metal block is 2-50 um, the thickness of the metal block is 0.1-5 um, the width of the semiconductor material block is 1-20 um, the length of the semiconductor material block is 4-100 um, and the thickness of the semiconductor material block is 0.1-5 um.
6. The chip of claim 4, wherein:
the substrate is a sapphire substrate.
7. A method of secure transmission using the secure transmission chip of any one of claims 4 to 6, wherein an information board is attached to the chip;
In encryption, the chip receives the terahertz waves transmitted by the terahertz wave transmitting source, performs low-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to complete information encryption;
And in decryption, the chip receives the terahertz waves emitted by the terahertz wave emitting source and the laser emitted by the laser emitting source, performs high-frequency filtering on the terahertz waves, and transmits the filtered terahertz waves to the terahertz wave receiver to finish information decryption.
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