CN112038486A - Method for realizing M-type magnetoresistance curve of device under external magnetic field parallel to substrate surface - Google Patents
Method for realizing M-type magnetoresistance curve of device under external magnetic field parallel to substrate surface Download PDFInfo
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- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F13/00—Apparatus or processes for magnetising or demagnetising
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The invention discloses a method for realizing that a device has an M-type magnetoresistive curve under an external magnetic field parallel to the surface of a substrate, belonging to the technical field of micro-nano scale devices. The method changes the flow direction of channel current by changing the shape of a two-dimensional channel, so that the channel current has at least two flow directions, thereby obtaining a plurality of different M-type magnetoresistive curves generated by overlapping magnetoresistive curves with different orientations. The device can be prepared on a flexible substrate due to the stretchable characteristic of the channel which is designed into a nonlinear shape. The device dimensions can be tuned between nanometer to micrometer dimensions and the magnetoresistance characteristics of the device can be tuned by varying the channel material, channel dimensions, combined channel dimensions. The device has the characteristics of controllable size, integration, simple process and the like.
Description
Technical Field
The invention belongs to the technical field of micro-nano scale devices, and particularly relates to a method for realizing that a device has an M-type magnetoresistive curve under an external magnetic field parallel to the surface of a substrate.
Background
The magnetic metal film is the most key basic functional material in the fields of information storage, signal processing, magnetic sensors and magnetic measurement at present, and has wide application prospect in the fields of novel storage modes, logic operation and the like. Most of the applications can not be separated from the unique influence of the magnetic field on the electrical conductivity of the material, which is represented as follows: under different external magnetic fields, the material is excited by the external magnetic fields to be in different magnetization states, and the different magnetization states can further influence the resistivity of the material, so that the resistance of the material can be controlled by the external magnetic field. This phenomenon of resistance change by the influence of a magnetic field is called a magnetoresistance effect, and although the magnetoresistance effect is not limited to a magnetic material, the phenomenon of the magnetoresistance effect is more pronounced in a magnetic material and thus receives more attention, and includes, but is not limited to, Anisotropic Magnetoresistance (AMR), Giant Magnetoresistance (GMR), Tunneling Magnetoresistance (TMR), and the like. The magnetic resistance-external magnetic field curve is very important for researching the magnetic performance of the magnetic film material, and the different characteristics of the curve determine the practical application possibility of one material in different fields. Different material compositions, preparation processes, thin film/multilayer film shapes, etc., all affect the magnetoresistance characteristics of the device. The current methods for preparing magnetic thin films mainly comprise: molecular Beam Epitaxy (MBE), metal organic vapor deposition (MOCVD), Magnetron Sputtering (Magnetron Sputtering), Pulsed Laser Deposition (PLD), electroplating (Electrodeposition), Electron Beam deposition (Electron Beam Evaporation), Thermal Evaporation deposition (Thermal Evaporation).
Disclosure of Invention
The invention aims to provide a method for realizing an M-type magnetoresistive curve of a device.
The principle of the invention is as follows:
by utilizing the unique and obvious sensitivity characteristic of Anisotropic Magnetoresistance (AMR) effect to the included angle between the magnetization direction and the current direction and the characteristic that different current directions can form different Magnetoresistance curves, a device containing two or more current directions and two or more Magnetoresistance curves are constructed, and the two or more Magnetoresistance curves are mutually superposed, so that the Magnetoresistance curves with different shapes can be obtained under the external magnetic field parallel to the surface of the substrate.
The anisotropic magnetoresistance effect is a phenomenon caused by the spin-orbit coupling effect, and is related to anisotropic scattering of electrons (in metals) or carriers (in semiconductor materials). Specifically, in a general magnetic metal, electrons in an s-orbital and a d-orbital share the role of current conduction, and the energy level of the orbitals is split when the metal is in a ferromagnetic state, so that the electrons in the spin-up direction and the electrons in the spin-down direction are respectively in different energy bands. The s and d valence bands after energy level splitting generate hybrid hybridization due to spin orbit coupling effect, so that the scattering effect between the bands is dominated by the spin orbit coupling effect and does not simply accord with the rule of a certain valence band any more. This effect is anisotropic and is closely related to the angle between the magnetization direction and the direction of electron motion. This anisotropy appears as: when the moving direction of the electrons is parallel (or antiparallel) to the magnetization direction, the electrons are subjected to the largest scattering, i.e., the largest resistance; when the direction of motion of the electrons is perpendicular to the direction of magnetization, the electrons experience minimal scattering, i.e., minimal resistance. Due to the characteristics of the anisotropic magnetic resistance, the magnetic resistance curves with different shapes can be obtained by adjusting the included angle between the external magnetic field and the current direction.
To illustrate the working principle of the device, assuming that in the initial state the overall magnetization direction of the material is co-or anti-parallel to the current direction, the material is in a higher resistance state in the initial state, but due to the presence of magnetic domains, the material is not in the highest resistance state at this time. This assumption is reasonable because for a magnetic thin film material of a nanowire (ribbon) type, due to shape anisotropy (shape anisotropy), the easy magnetization axis can be determined to be in the long axis direction in general, and the current conduction direction can be in the length direction as well. Two cases are considered below: (1) the direction of the initial magnetic field is parallel to the direction of the current, and (2) the direction of the initial magnetic field is perpendicular to the direction of the current. For the case where the initial magnetic field is parallel to the current, i.e. as described in (1), it is necessary to subdivide the case where the magnetic field is parallel to the initial magnetization direction in the same direction and in the opposite direction. If the direction of the magnetic field is the same as the initial magnetization direction, the increase of the magnetic field can cause the initial magnetization direction to be more consistent (for a multi-domain material), the resistivity of the material can be increased until the maximum magnetization direction parallel to the external magnetic field is reached in the material body, namely, the material enters a saturation state in the parallel direction, and the highest resistance is reached; assuming that the direction of the magnetic field is antiparallel to the initial magnetization direction, the increase of the magnetic field causes a 180 ° rotation of the magnetization direction of the material, which experiences a state perpendicular to the direction of the current during the rotation of the magnetization direction, at which the resistance is in the lower resistance state, so that in this case, as the external magnetic field increases, the resistance assumes a minimum value, which is expressed by first falling to a minimum and then rising to the maximum resistance (the material enters the saturation state). Considering then the case (1) in combination, if the external magnetic field changes slowly from one parallel direction to its opposite direction, for example from-1T to 1T, it is expected that ideally the corresponding shape of the reluctance curve should have a butterfly or wing-like character: the high configuration is maintained, then a resistance minimum value appears near the zero magnetic field, then the resistance is increased to the high configuration, and the same is true when the magnetic field change direction is opposite. For the case of applying a vertical magnetic field, that is, as described in (2), the material in the initial state maintains a higher resistance state, the magnetization direction of the material is changed with the increase of the external magnetic field, and tends to the direction of the external magnetic field more, when the external magnetic field is sufficiently large, the magnetization direction of the material maximally follows the direction of the external magnetic field, enters a saturation state in the vertical direction, and the magnetization direction at this time is perpendicular to the current direction, and reaches a low resistance state. Thus in case (2), the reluctance exhibits a representation resembling a cosine function: under the condition of zero magnetic field or remanence, the resistance is in a higher resistance state, and along with the increase of the external magnetic field, the magnetic resistance is slowly reduced until the external magnetic field is large enough, and the material enters a saturation state to reach a low resistance state. It is noted that the corresponding high configurations in cases (1) and (2) are consistent, but the low resistance states are inconsistent, with the low resistance in (1) being higher than in (2), which is related to the domain structure of the magnetic material. In addition, the magnetoresistive curve should have a hysteresis characteristic, which is caused by the hysteresis characteristic of the magnetization of the ferromagnetic material.
The invention provides a method for realizing that a device has an M-type magnetoresistive curve under an external magnetic field parallel to the surface of a substrate, which is characterized in that: preparing a two-dimensional composite channel and a metal electrode on an insulating substrate, wherein the composite channel comprises two parts of structures, namely an original channel with a current direction parallel to the direction of an external magnetic field and a combined channel with a current direction partially or completely vertical to the external magnetic field, and the composite channel is made of a ferromagnetic metal material; and applying an external magnetic field parallel to the plane of the substrate to obtain the device with the M-type magneto-resistance curve.
The invention specifically comprises the following steps:
1) and selecting an insulating substrate, opening a window through photoetching, and determining the position and the shape of the composite channel.
The substrates used may vary according to different experimental requirements, but all require that the substrates be insulating and that it be ensured that the device will not deform or react with material on any surface when the device is turned on by joule heating. The substrate may be rigid, they may be Si, SiO2Mica, sapphire, glass, quartz, etc., or a conductive substrate covered with an insulating layer, such as SiO2A substrate having a multilayer structure of/low-resistance Si, boron nitride/low-resistance Si, silicon carbide/low-resistance Si, insulating metal oxide (iron oxide, copper oxide, aluminum oxide, etc.)/metal (gold, silver, copper, iron, aluminum, etc.), etc. SubstrateThe flexible substrate can be made of PDMS, PET, PI, etc., if a flexible substrate is used, an insulating layer with a thickness not less than 100nm and poor thermal conductivity is prepared on the surface of the substrate in advance to avoid direct contact between the device and the substrate and prevent the substrate from deforming due to Joule heat, and the insulating layer can be made of alumina, silicon oxide, silicon nitride, etc. According to different sizes of required devices, corresponding photoetching modes can be selected, and the photoetching modes comprise ultraviolet photoetching, electron beam photoetching and the like.
The composite channel is required to be nonlinear so as to ensure that the current conduction process simultaneously comprises two parts of structures which are parallel to the external magnetic field and vertical to the external magnetic field. To clearly illustrate the requirements of the channel shape, a two-dimensional coordinate system is established in the substrate plane, and meanwhile, the parallel direction of the two electrodes is assumed to be the x direction, and the direction of the applied magnetic field is parallel to the x direction, as shown in fig. 1. The composite channel is composed of two parts, one part is a channel parallel to the x-axis direction and called as an original channel, the current direction in the original channel is parallel to the external magnetic field direction, and a part outlined by a two-dot chain line in fig. 1 is taken as an example; the other part contains a channel which is parallel to the y axis or forms a certain angle (theta, theta is required to be less than 30 degrees) with the y axis, the channel is called a combined channel, the current direction in the combined channel is partially or completely vertical or nearly vertical to the external magnetic field, and a part shown by a dotted-dashed frame in the figure 1 is taken as an example. The shape of the composite channel can be changed according to actual requirements, the composite channel can be rectangular (as shown in fig. 1(a)), trapezoidal or triangular (as shown in fig. 1(b)), and the position of the composite channel is not required and can be located at any position between the two electrodes. The combined channel should have a length (L, the maximum distance between both sides of the combined channel in the x-axis direction) greater than 10nm, a height (H, the maximum distance between both sides of the combined channel in the y-axis direction) greater than 10nm, and an intersection of the combined channel and the original channel may be as wide as the channel or smaller or larger than the channel width, and if the contact width is smaller than the original channel width, the minimum contact width should be above 5nm because ballistic magnetoresistance may be generated for a smaller contact width.
The original channel and the composite channel jointly form the composite channel, and the composite channel has the following functions: when conducting current exists between the source electrode and the drain electrode, the current in the original channel is parallel to the direction of the external magnetic field, the current in the combined channel has a vertical part vertical to or close to the external magnetic field, and the two magneto-resistance effects generated by the currents in different directions of the magnetic field are mutually superposed through series connection, so that an M-type magneto-resistance curve is formed.
2) And depositing the composite channel and the protective layer on the basis of photoetching opened target window.
The composite channel material is required to be a ferromagnetic metal material for the following reasons: in order to ensure the conductivity of the device, the channel is a conductor, which requires that the channel is made of a metal material; the magnetization effect of ferromagnetic substances in an external magnetic field is stronger than that of paramagnetic, diamagnetic and other substances, and the ferromagnetic substance is more suitable for manufacturing a magnetic sensitive device. The composite channel material can be a simple metal substance such as iron, cobalt, nickel, manganese and the like, can also be various magnetic metal alloys, and can be binary alloys such as iron-nickel alloy, cobalt-nickel alloy, iron-cobalt alloy and the like, and can also be various magnetic alloys such as ternary alloy and the like. If the used channel material is a metal material which is not easy to oxidize, the composite channel can use single-layer metal, if the used channel material is a metal material which is easy to oxidize, the composite channel can be of a double-layer structure, the magnetic metal is positioned at the bottom layer, and the upper layer is covered with a layer of material which is not easy to oxidize and serves as a protective layer. The channel may be formed of a multilayer film having a multilayer structure according to experimental requirements.
The protective layer is made of a material which is difficult to oxidize and is compact, and can be made of metal materials such as gold, platinum, palladium and the like or nonmetal materials such as silicon oxide, silicon nitride and the like. The thickness of the protective layer should not be too thick and may be between 2nm and 10 nm. The manufacturing of the protective layer does not need to be carried out by photoetching independently to determine the position, the protective layer can be manufactured immediately after the conductive channel is manufactured, the manufacturing mode is consistent with that of the magnetic metal material, and the effect of finishing the preparation of the protective layer without sample is achieved. The protective layer does not affect the performance of the device and is therefore not necessary, but devices without a protective layer are very susceptible to oxidation and can be adjusted according to experimental requirements.
3) Photolithography determines the shape and position of the electrodes.
The shape and size of the metal electrode can be adjusted according to experimental requirements, and can be square, rectangular, circular, triangular and the like. The number of the electrode terminals can be source and drain electrodes at two ends, four-terminal electrodes and the like.
4) Manufacturing a metal electrode on the basis of opening an electrode manufacturing window: if the protective layer is a non-conductor, advanced etching is needed, the non-conductor protective layer is removed, and then the electrode is manufactured; if the protective layer is a conductor, the electrode can be directly fabricated. The final device can be obtained after the electrode fabrication is completed, as shown in fig. 2.
The electrodes should be metal substances which are not easy to oxidize and have low resistivity, and the electrodes can be made of gold, copper, palladium, platinum and the like. The layout requires that the electrode and the channel are partially overlapped so as to be connected and conducted. The electrode can be a single-layer metal material, or a double-layer or multi-layer material, and the purpose of using the double-layer or multi-layer material is to add an adhesion layer between the metal electrode and the substrate to increase the adhesion between the electrode and the substrate, and the electrode can be of a structure of gold/platinum, gold/palladium/platinum, and the like. The thickness of the metal electrode should not be too small, and should be 50nm or more, and theoretically there may be no upper limit of the thickness.
The oxide layer of the non-conductor can be removed by methods such as wet etching, ion etching and the like, and the methods are selected according to different protective layer materials, so that the metal material cannot be seriously damaged after the protective layer is removed, and reactants which cannot be removed cannot be introduced.
5) The device has M-type magnetoresistance performance test, and requires to apply external magnetic field parallel to the x-axis direction as shown in FIG. 1, and the magnetic field can reach +/-400 mT and above, and can be continuously changed. For devices without protective layer, the testing environment is high vacuum environment with pressure less than 10-4Millitorr. The test temperature is not required. The test current must not be too large, typically less than 10mA, because: the excessive current brings heat effect, on one hand, the oxidation of the device is aggravated, on the other hand, the change of channel resistance is caused, and the detection of the magnetic resistance characteristic is influenced.
In the process of preparing the device, the oxidation of the channel part in the process needs to be prevented, the device can be stored in an environment capable of effectively isolating oxygen when a processing technology is not carried out, such as a vacuum environment, a pure acetone environment and the like, and the cleanness of the storage environment is kept during storage, so that the existence of impurities influencing the performance of the device is avoided.
The preparation sequence of the electrode and the composite channel is not limited in the preparation process of all required devices, the method comprises the steps of firstly preparing the channel and then preparing the electrode, and if the steps 3) and 4) are replaced with the steps 1) and 2), the electrode is prepared firstly and then the channel is attached to the electrode, the expected effect can be achieved. And the latter does not necessarily require an etching operation prior to electrode preparation.
The invention has the technical characteristics that: the invention utilizes the phenomenon that different magnetoresistance effects can be caused by different directions of current and magnetic field to manufacture a magnetic sensitive device with two current flow directions, and a device with an M-shaped magnetoresistance curve under an in-plane magnetic field is obtained. And the device can be prepared on a flexible substrate due to the stretchable characteristic of the channel designed into the nonlinear shape. The device can be adjusted in scale from nanometer to micrometer, and the magnetic resistance characteristics of the device can be adjusted by changing channel material, channel size and structure size. The device has the characteristics of controllable size, integration, simple process and the like.
Drawings
FIG. 1 is a schematic diagram (top view) of a composite channel formed on an insulating substrate, wherein (a) is a rectangular composite channel, (b) is a trapezoidal or triangular composite channel, and (c) and (d) are composite channels formed by channels in two different directions; the two-dot chain line box in the figure identifies the channel part parallel to the external magnetic field direction, i.e. the original channel; the dashed box in the figure identifies the portion of the channel that is perpendicular or nearly perpendicular to the external magnetic field, i.e., the combined channel.
FIG. 2 is a schematic diagram of a first embodiment of the present invention, wherein (a) is a top view and (b) is a front view;
FIG. 3 is a schematic diagram of a second embodiment of the present invention, wherein (a) is a top view and (b) is a front view;
fig. 4 is a schematic view of a third embodiment of the present invention, where (a) is a top view and (b) is a front view.
In the figure, 1 is an insulating substrate, 2 is a composite channel material, 3 is a protective layer, and 4 is a metal electrode (taking a square electrode as an example).
Detailed Description
The invention is further illustrated by the following examples. It is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Example 1: and preparing a composite channel device containing a rectangular combined channel on a PET substrate by taking nickel-cobalt alloy as a conductive material.
1) A PET film of suitable size is chosen as the substrate on which a silicon oxide film is first deposited to avoid direct contact of the device with the PET material. Then selecting a proper area, opening a window through photoetching, and determining the position and the shape of the channel:
cleaning a PET substrate, selecting a clean utensil, firstly soaking the clean utensil in deionized water, cleaning the utensil for one minute at the maximum power by using an ultrasonic cleaner, taking out the utensil, and drying the utensil by using a nitrogen gun; then soaking the glass fiber cloth in absolute ethyl alcohol, cleaning the glass fiber cloth for half a minute by using an ultrasonic cleaner at the maximum power, taking the glass fiber cloth out, and drying the glass fiber cloth by using a nitrogen gun; and finally, soaking the glass fiber reinforced plastic in pure acetone, cleaning the glass fiber reinforced plastic for half a minute by using an ultrasonic cleaner at the maximum power, taking out the glass fiber reinforced plastic, and drying the glass fiber reinforced plastic by using a nitrogen gun.
And after cleaning, directly depositing an alumina film with the thickness of 200nm on the whole substrate by using an electron beam deposition system, and ensuring that the device manufacturing area can be completely covered by the alumina film.
A layer of positive photoresist PMMA (4000rpm, one minute) is coated on a flexible substrate deposited with alumina in a spinning mode, in order to avoid the overheating deformation of a PET substrate, the step of baking the photoresist can be omitted, and the substrate coated with the photoresist in a clean fume hood is kept still for five minutes. The total length of the composite channel was 12 μm and the width was 800nm by using an electron beam lithography machine, wherein the shape of the composite channel was designed to be rectangular, as shown in fig. 1(a), and the composite channel was 1 μm long and 1 μm high. And developing after photoetching is finished, developing for one minute by using a PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as a fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
2) Manufacturing a conductive channel and a protective layer thereof on the substrate with the opened channel window:
using an electron beam deposition system, a layer of nickel-cobalt alloy with a thickness of 20nm was first deposited while maintaining the main chamber at a gas pressure of 10 deg.f-6Millitorr or less to prevent the magnetic metal from being oxidized during the deposition process, and the thickness of the deposited film is controlled within +/-2 nm. And after the nickel-cobalt alloy deposition is finished, the high-voltage power supply of the electron beam system is turned off, and the sample is kept not to be sampled in the main chamber. And after the target material of the nickel-cobalt alloy is cooled, adjusting the target material to be platinum (Pt), and continuing to perform second deposition, wherein the deposition is to manufacture a protective layer, and the target thickness of the metal platinum is 2 nm.
After the magnetic metal and the protective layer thereof are deposited, stripping is carried out. Immersing the whole substrate in pure acetone for more than 3 minutes, sucking sufficient acetone by using a disposable rubber head dropper, and blowing and releasing the acetone to the metal-deposited piece without contacting the piece, wherein the process is repeated for one minute, and the good stripping effect can be achieved within one minute of blowing and releasing time. After the end of the peeling, the substrate was rinsed with clean pure acetone for 30s and the peeling effect was observed using an optical microscope. Finally, pure acetone can be used for liquid sealing of the substrate until the next process.
3) And determining the shape and the position of the metal electrode by photoetching by taking the position of the channel as a reference:
spin-coating a layer of positive photoresist PMMA (4000rpm, one minute) on a substrate on which a channel is formed, standing for five minutes, then photoetching by using an electron beam photoetching machine, ensuring that the shape of a metal electrode is typically 50 micrometers in length and 50 micrometers in width, and ensuring that the electrode and the channel are overlapped by more than 1 micrometer but not more than 2 micrometers, and then developing. Developing for one minute by using PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
4) And (3) manufacturing a metal electrode on the basis of opening the electrode window, and finishing the preparation of the device:
using an electron beam deposition system, a 2nm layer of platinum was first deposited on the substrate, which is an adhesion layer that increases the adhesion between the gold and the insulating substrate. And after the deposition is finished, the high-voltage power supply of the electron beam system is closed, and the sample is kept not to be sampled in the main chamber. And after the platinum target material is cooled, adjusting the target material to be gold (Au), and continuously carrying out secondary deposition to the thickness of 250 nm. Considering the thicker thickness of the gold plating, the deposition can be divided into two times, each time 125nm, so as to protect the crucible for holding the gold target material.
And (3) peeling after the double-layer metal electrode is manufactured, immersing the whole substrate in pure acetone for more than 3 minutes, and then cleaning for 30 seconds by using an ultrasonic cleaning machine at the lowest power, wherein the 30 seconds are enough to peel off completely.
Fig. 2 is a schematic structural diagram of the device.
5) The device was tested for performance to determine the M-mode magnetoresistance characteristics of the device. An external magnetic field parallel to the sample stage is required to be applied, the magnetoresistance curve is most obvious when the magnetic field is vertical to the length direction of the channel, the size of the magnetic field can reach +/-1T, and the measurement current is not too large and can be 1mA or even smaller.
Example 2: and preparing a device with an L-shaped composite channel on a silicon oxide substrate by taking a cobalt simple substance as a conductive material.
1) Selecting a silicon oxide/silicon substrate with proper size as a substrate, selecting proper positions on the substrate, and determining the size and the shape of a channel through photoetching:
cleaning a silicon oxide substrate, selecting a clean utensil, firstly soaking the utensil in deionized water, cleaning the utensil for one minute at the maximum power by using an ultrasonic cleaner, taking out the utensil, and drying the utensil by using a nitrogen gun; then soaking the glass fiber cloth in absolute ethyl alcohol, cleaning the glass fiber cloth for half a minute by using an ultrasonic cleaner at the maximum power, taking the glass fiber cloth out, and drying the glass fiber cloth by using a nitrogen gun; and finally, soaking the glass fiber reinforced plastic in pure acetone, cleaning the glass fiber reinforced plastic for half a minute by using an ultrasonic cleaner at the maximum power, taking out the glass fiber reinforced plastic, and drying the glass fiber reinforced plastic by using a nitrogen gun.
After the cleaning, photoetching is carried out, a layer of positive photoresist PMMA (4000rpm, one minute) is coated in a spinning mode, baking is carried out for 2 minutes at 180 ℃, and photoetching is carried out by using an electron beam photoetching machine, wherein the shape of a channel is L-shaped, the length of a long side is 6 micrometers, the length of a short side is 2 micrometers, and the width is 500 nm. And developing after photoetching is finished, developing for one minute by using a PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as a fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
And after the development is finished, an electron beam deposition system is used for depositing an alumina film with the thickness of 100nm, and the error of the deposition thickness is controlled within +/-2 nm. After the complete body is made, exfoliation is performed: immersing the whole substrate in pure acetone for more than 3 minutes, then cleaning with an ultrasonic cleaning machine at the lowest power for 10 seconds to 30 seconds, observing the stripping effect by using an optical microscope, and if residues are attached to the substrate around the configuration body, continuing the ultrasonic cleaning for 10 seconds to 30 seconds by properly increasing the power until no residual impurities exist around the configuration body.
2) Manufacturing a conductive channel and a protective layer thereof on the substrate with the opened channel window:
using electron beam deposition system, firstly depositing a layer of cobalt simple substance with thickness of 15nm, and maintaining the pressure of the main chamber at 10 deg.C during deposition-6Millitorr or less to prevent the magnetic metal from being oxidized during the deposition process, and the thickness of the deposited film is controlled within +/-2 nm. Wait for the nickel cobalt alloyAfter the deposition is finished, the high-voltage power supply of the electron beam system is turned off, and the sample is kept out of the main chamber. And after the target material of the nickel-cobalt alloy is cooled, adjusting the target material to be platinum (Pt), and continuing to perform second deposition, wherein the deposition is to manufacture a protective layer, and the target thickness of the metal platinum is 2 nm.
After the magnetic metal and the protective layer thereof are deposited, stripping is carried out. The whole substrate was immersed in pure acetone for more than 3 minutes and then cleaned using an ultrasonic cleaner at minimum power for a period of 30 seconds, typically 30 seconds sufficient to strip clean. After the end of the peeling, the substrate was rinsed with clean pure acetone for 30s and the peeling effect was observed using an optical microscope. Finally, pure acetone can be used for liquid sealing of the substrate until the next process.
3) And determining the shape and the position of the metal electrode by photoetching by taking the position of the channel as a reference:
spin-coating a layer of positive photoresist PMMA (4000rpm, one minute) on a substrate with a channel, baking at 180 ℃ for 2 minutes, photoetching by using an electron beam lithography machine, ensuring that the shape of a metal electrode is more than 250nm but less than 500nm in coincidence with the channel, wherein the typical value of the shape of the metal electrode is 30 μm in length and 30 μm in width, and then developing. Developing for one minute by using PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
4) And (3) manufacturing a metal electrode on the basis of opening the electrode window, and finishing the preparation of the device:
and after the development is finished, the electron beam deposition system is utilized to deposit a layer of 2nm platinum, and after the deposition is finished, the high-voltage power supply of the electron beam system is closed to keep the sample not to be sampled in the main chamber. After the platinum target material is cooled, the target material is adjusted to palladium (Pd), and the second deposition is continuously carried out, wherein the thickness is 5 nm. And after the second deposition is finished, the high-voltage power supply of the electron beam system is turned off, and the sample is kept not to be sampled in the main chamber. After the target material of palladium is cooled, the target material is adjusted to be gold (Au), and third deposition is continuously carried out, wherein the thickness is 200 nm.
After the metal electrode is manufactured, the metal electrode is peeled off, the whole substrate is immersed in pure acetone for more than 3 minutes, and then the substrate is cleaned by an ultrasonic cleaner at the lowest power for 30 seconds, and the 30 seconds are generally enough to be peeled off.
The schematic structure of the device is shown in fig. 3.
5) The performance of the device is tested to determine the magnetoresistive characteristics of the device. An external magnetic field parallel to the sample stage is required to be applied, the magnetoresistance effect is most obvious when the magnetic field is perpendicular to one side of the L-shaped channel, the size of the magnetic field can reach +/-1T, and the measurement current is not too large and can be 1mA or even smaller.
Example 3: and preparing a device with a composite channel of a triangular combined channel on a flexible substrate, wherein the channel is attached to the electrode.
1) A PI film with proper size is selected as a substrate, and a silicon oxide film is firstly deposited on the PI film to avoid direct contact between the device and the PI material. Then selecting a proper area, opening a window through photoetching, and determining the position and the shape of the electrode:
cleaning a PI substrate, selecting a clean utensil, firstly soaking the PI substrate in deionized water, cleaning the PI substrate for one minute at the maximum power by using an ultrasonic cleaner, taking out the PI substrate, and drying the PI substrate by using a nitrogen gun; then soaking the glass fiber cloth in absolute ethyl alcohol, cleaning the glass fiber cloth for half a minute by using an ultrasonic cleaner at the maximum power, taking the glass fiber cloth out, and drying the glass fiber cloth by using a nitrogen gun; and finally, soaking the glass fiber reinforced plastic in pure acetone, cleaning the glass fiber reinforced plastic for half a minute by using an ultrasonic cleaner at the maximum power, taking out the glass fiber reinforced plastic, and drying the glass fiber reinforced plastic by using a nitrogen gun.
And after cleaning, directly depositing an alumina film with the thickness of 100nm on the whole substrate by using an electron beam deposition system, and ensuring that the device manufacturing area can be completely covered by the alumina film. The PI film has better temperature resistance than the PET film, so the heat insulating film can be made appropriately thinner to increase the light transmittance of the substrate.
A positive photoresist, PMMA, was spin coated (4000rpm, one minute) onto a flexible substrate deposited with alumina and baked at 180 ℃ for 2 minutes. Photolithography was performed using an ultraviolet lithography system, and the distance between the electrodes was set to 10 μm, and the length and width of the electrodes were set to 50 μm. And developing after photoetching is finished, developing for one minute by using a PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as a fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
2) Manufacturing a metal electrode:
by using an electron beam deposition system, a layer of platinum with a thickness of 2nm is deposited, and the platinum is used as an adhesion layer to increase the adhesion between the gold and the substrate. And after the platinum deposition is finished, the high-voltage power supply of the electron beam system is turned off, and the sample is kept not to be sampled in the main chamber. And after the target material of the platinum is cooled, adjusting the target material to be gold, and continuously carrying out secondary deposition, wherein the deposition thickness is 60 nm.
And (4) after the double-layer metal electrode is manufactured, stripping. The entire substrate was immersed in pure acetone for more than 3 minutes and then cleaned using an ultrasonic cleaner for half a minute with minimal power. After the end of the peeling, the substrate was rinsed with clean pure acetone for 30s and the peeling effect was observed using an optical microscope. Finally, pure acetone can be used for liquid sealing of the substrate until the next process.
3) Taking the position of the metal electrode as a reference, opening a window of the channel through photoetching, determining the shape and the position of the composite channel, wherein the shape of the combined channel in the middle of the channel is a triangle:
spin-coating a layer of positive photoresist PMMA (4000rpm, one minute), baking for 2 minutes at 180 ℃, using an ultraviolet lithography system to perform alignment, wherein the channel is a composite of a long straight original channel and a triangular combined channel, the length of the combined channel is 2 micrometers, the height of the combined channel is 2 micrometers, the distance from the left side boundary of the combined channel to a layer of electrode is 2.5 micrometers, the length of the long straight channel is 12 micrometers, the two ends of the channel can be in contact with the electrode, and the width of the channel is 1 micrometer. And developing after photoetching is finished, developing for one minute by using a PMMA special developing solution (8 ℃), fixing for one minute by using isopropanol as a fixing solution, drying by using a nitrogen gun, observing the developing effect by using an optical microscope, repeating the developing process again if the developing effect is insufficient, controlling the developing time of each time to be 10 seconds, and generally achieving the best developing effect within one minute to one half of the total time.
4) Manufacturing a conductive channel and a protective layer thereof on the substrate with the opened channel window:
using electron beam deposition system, firstly depositing a layer of cobalt simple substance with thickness of 15nm, and maintaining the pressure of the main chamber at 10 deg.C during deposition-6Millitorr or less to prevent the magnetic metal from being oxidized during the deposition process, and the thickness of the deposited film is controlled within +/-2 nm. And after the nickel-cobalt alloy deposition is finished, the high-voltage power supply of the electron beam system is turned off, and the sample is kept not to be sampled in the main chamber. And after the target material of the nickel-cobalt alloy is cooled, adjusting the target material to be platinum (Pt), and continuing to perform second deposition, wherein the deposition is to manufacture a protective layer, and the target thickness of the metal platinum is 2 nm.
After the magnetic metal and the protective layer thereof are deposited, stripping is carried out. The whole substrate was immersed in pure acetone for more than 3 minutes and then cleaned using an ultrasonic cleaner at minimum power for a period of 30 seconds, typically 30 seconds sufficient to strip clean. After the end of the peeling, the substrate was rinsed with clean pure acetone for 30s and the peeling effect was observed using an optical microscope. Finally, the substrate can be liquid sealed by pure acetone until testing or subsequent processes are carried out.
The schematic structure of the device is shown in fig. 4.
5) The performance of the device is tested to determine the magnetoresistive characteristics of the device. An external magnetic field parallel to the sample stage is required to be applied, the magnetoresistance effect is most obvious when the length direction of a magnetic field channel is vertical, the size of the magnetic field can reach +/-1T, and the measurement current is not too large and can be 1mA or even smaller.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the present invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A method for realizing that a device has an M-type magnetoresistance curve under an external magnetic field parallel to a substrate surface, comprising the steps of:
1) preparing a composite two-dimensional channel and a metal electrode on an insulating substrate, wherein the composite channel comprises two parts of structures, namely an original channel with a current direction parallel to the direction of an external magnetic field and a combined channel with a current direction partially or completely vertical to the external magnetic field, and the composite channel is made of a ferromagnetic metal material;
2) and applying an external magnetic field parallel to the plane of the substrate to obtain the device with the M-type magneto-resistance curve.
2. The method according to claim 1, wherein in step 1), a two-dimensional coordinate system is established in the plane of the insulating substrate, wherein the parallel direction of the two electrodes is the x direction, the direction of the applied magnetic field is parallel to the x direction, the original channel of the composite channel is parallel to the x direction, the combined channel is parallel to the y axis or forms an angle θ with the y axis, and θ is less than 30 °.
3. The method of claim 1, wherein the magnetic metal is a simple substance of a magnetic metal such as iron, cobalt, nickel, and manganese, or a magnetic metal alloy such as iron-nickel alloy, nickel-cobalt alloy, and iron-cobalt alloy.
4. The method for realizing a device with an M-type magnetoresistive curve as claimed in claim 1, wherein the cross-sectional shape of the combined channel is rectangular, triangular or circular, the length of the combined channel is greater than 10nm, the height of the combined channel is greater than 10nm, and the contact width of the combined channel and the original channel is more than 5 nm.
5. The method for realizing a device with an M-type magnetoresistive curve as claimed in claim 1, wherein the insulating substrate is a rigid substrate, and single-layer or multi-layer non-metallic materials such as high-resistivity silicon, glass, quartz, sapphire, silicon oxide/silicon, silicon carbide/silicon, boron nitride/silicon, various organic materials/silicon, etc. are used.
6. The method of claim 1, wherein the insulating substrate is a flexible insulating material such as PDMS film, PET film, PI film, PCF film, silicone rubber film, or silicone resin film.
7. The method for realizing a device having an M-type magnetoresistance curve as claimed in claim 1, wherein the metal electrode is a single metal such as gold, copper, platinum, palladium, silver, or a multilayer metal such as platinum/gold, palladium/gold, platinum/palladium/gold, and the shape of the metal electrode is any shape such as rectangle, triangle, circle, etc.
8. The method for realizing a device with an M-type magnetoresistive curve as claimed in claim 1, wherein the composite channel and the metal electrode are prepared on the insulating substrate by a deposition method, and the deposition method is chemical deposition, physical deposition, electrochemical deposition, vapor deposition or liquid deposition.
9. The method according to claim 1, wherein a layer of material that is not easily oxidized is coated on the composite channel ferromagnetic metal material as a protection layer.
10. The method according to claim 9, wherein the protective layer is a conductor or nonconductor which is not easily oxidized, such as gold, platinum, ruthenium, polysilicon, silicon oxide, aluminum oxide, or the like, and has a thickness of 2nm to 10 nm.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589041A (en) * | 1982-08-30 | 1986-05-13 | International Business Machines Corporation | Differential magnetoresistive sensor for vertical recording |
| EP0642181A1 (en) * | 1993-09-02 | 1995-03-08 | Commissariat A L'energie Atomique | Magnetoresistive device and sensor with a geometric repetitive pattern |
| JPH08330644A (en) * | 1995-05-29 | 1996-12-13 | Canon Electron Inc | Magnetic detection element and magnetic head |
| JP2004340953A (en) * | 2003-04-21 | 2004-12-02 | Japan Science & Technology Agency | Magnetic field sensing element, manufacturing method therefor, and device using them |
| JP2004349528A (en) * | 2003-05-23 | 2004-12-09 | Fuji Electric Fa Components & Systems Co Ltd | Magnetic impedance element |
| JP2005164324A (en) * | 2003-12-01 | 2005-06-23 | Canon Electronics Inc | Dynamic sensor and rotation detection sensor using magnetic thin film |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| US20190178954A1 (en) * | 2017-12-11 | 2019-06-13 | Allegro Microsystems, Llc | Magnetoresistance Element Having Selected Characteristics To Achieve A Desired Linearity |
-
2020
- 2020-08-04 CN CN202010771744.9A patent/CN112038486A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589041A (en) * | 1982-08-30 | 1986-05-13 | International Business Machines Corporation | Differential magnetoresistive sensor for vertical recording |
| EP0642181A1 (en) * | 1993-09-02 | 1995-03-08 | Commissariat A L'energie Atomique | Magnetoresistive device and sensor with a geometric repetitive pattern |
| JPH08330644A (en) * | 1995-05-29 | 1996-12-13 | Canon Electron Inc | Magnetic detection element and magnetic head |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| JP2004340953A (en) * | 2003-04-21 | 2004-12-02 | Japan Science & Technology Agency | Magnetic field sensing element, manufacturing method therefor, and device using them |
| JP2004349528A (en) * | 2003-05-23 | 2004-12-09 | Fuji Electric Fa Components & Systems Co Ltd | Magnetic impedance element |
| JP2005164324A (en) * | 2003-12-01 | 2005-06-23 | Canon Electronics Inc | Dynamic sensor and rotation detection sensor using magnetic thin film |
| US20190178954A1 (en) * | 2017-12-11 | 2019-06-13 | Allegro Microsystems, Llc | Magnetoresistance Element Having Selected Characteristics To Achieve A Desired Linearity |
Non-Patent Citations (1)
| Title |
|---|
| L.K. QUYNH, ET AL.: "Design Optimization of an Anisotropic Magnetoresistance Sensor for Detection of Magnetic Nanoparticles", 《JOURNAL OF ELECTRONIC MATERIALS》 * |
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