CN112038485A - High-sensitivity Hall sensor and manufacturing method thereof - Google Patents
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Abstract
The invention belongs to the technical field of Hall sensors, and relates to a high-sensitivity Hall sensor and a manufacturing method thereof, wherein the Hall sensor comprises a substrate, an active layer, an isolation layer and four electrode layers; the active layer is arranged on the substrate, the isolation layer and the four electrode layers are arranged on the active layer, and all the electrode layers are dispersedly arranged on the periphery of the isolation layer; the isolation layer comprises a first layer and a second layer which are arranged in a stacked mode, and the first layer is arranged between the active layer and the second layer; the first layer is doped with first ions, the second layer is doped with second ions, the implantation energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions. The technical scheme provided by the high-sensitivity Hall sensor and the manufacturing method thereof can ensure that the equivalent internal resistance of the Hall sensor cannot be increased so as to improve the sensitivity of the Hall sensor. In a word, the Hall sensor has the characteristics of simple structure, high stability and high sensitivity.
Description
Technical Field
The invention relates to the technical field of Hall sensors, in particular to a high-sensitivity Hall sensor and a manufacturing method thereof.
Background
A magnetic field sensor is an electronic device that converts a magnetic field into a corresponding electrical signal. The physical nature of the hall effect is that the lorentz force affects the direction of movement of carriers in the current. When a bias current flows through a conductor or semiconductor through which a magnetic field is passed, the lorentz force causes the direction of motion of the carriers to deviate from the direction of the bias current and the magnetic field, whereupon the carriers collect in the other direction, creating a potential difference, i.e., a hall voltage proportional to the magnitude of the bias current and the magnetic field. The magnetic field sensor realized by using the hall effect is a hall sensor, and due to the perfect combination with the microelectronic process, the hall sensor with low cost has become the most widely used magnetic field sensor, and the market sales amount reaches billions of dollars at present. The sensor is usually used as a key component of a non-contact sensor for detecting linear position, rotation angle, speed, current and the like, and is widely applied to the fields of industrial control, consumer electronics, automobile industry and the like.
The hall sensor is required to have excellent stability and reliability as a standard measuring tool. However, surface effects can lead to sensitivity and instability of the hall sensor. There is an uncontrolled amount of charge on the detection region that attracts carriers of opposite polarity in the active layer of the detection region, thereby changing the performance of the hall sensor, a phenomenon known as the skin effect.
To reduce surface effects, there are two main methods currently in use: the first method is that a P-type doped layer is added on an active layer of a detection region and is grounded; the second method is to cover a conductor (polysilicon or metal) as a protective layer on the active layer and to ground the protective layer. The two are usually used in combination in a hall sensor produced in practice. However, due to the influence of the Ordinary Magnetoresistance (OMR) effect, the equivalent internal resistance of the hall sensor increases in a nonlinear small range with the increase of the external magnetic field, but the hall sensor with the P-type doped layer prepared in the detection region by the ion implantation process is limited by the implantation process, the implanted ions in the P-type doped layer are not uniform, the equivalent internal resistance is generally greater than that of the hall sensor with the uniformly distributed ions in the P-type doped layer (in an ideal state), and the problem of the non-uniform distribution of the ions in the P-type doped layer affects the sensitivity and the instability of the hall sensor. In addition, the stability of the polysilicon or metal protective layer is poor, and the effect of reducing the surface effect is less obvious, thereby causing the influence on the sensitivity and instability of the hall sensor.
Disclosure of Invention
The embodiment of the invention aims to solve the technical problem that the surface effect of the existing Hall sensor influences the sensitivity and the stability.
In order to solve the above technical problem, an embodiment of the present invention provides a high-sensitivity hall sensor, which adopts the following technical solutions:
this high sensitivity hall sensor includes: the device comprises a substrate, an active layer, an isolation layer and four electrode layers;
the active layer is arranged on the substrate, the isolation layer and the four electrode layers are arranged on the active layer, and all the electrode layers are dispersedly arranged on the periphery of the isolation layer;
the isolation layer comprises a first layer and a second layer which are arranged in a stacked mode, and the first layer is arranged between the active layer and the second layer; the first layer is doped with first ions, the second layer is doped with second ions, the implantation energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions.
As a further improvement of the above technical solution, the high-sensitivity hall sensor further includes a protective layer; the protective layer is arranged on the top ends of the isolation layer and the four electrode layers in a stacked mode.
As a further improvement of the above technical solution, the protective layer includes a polyimide material layer.
As a further improvement of the above technical solution, at the position of the electrode layer, the protective layer is provided with at least three strip-shaped holes arranged along the length direction of the electrode layer, the three strip-shaped holes are arranged in parallel, and each strip-shaped hole is communicated with the corresponding electrode layer.
As a further improvement of the above technical solution, the doping types of the first layer and the second layer are both P-type doping.
As a further improvement of the above technical solution, the doping type of the substrate is P-type doping, and the doping types of the active layer and the electrode layer are N-type doping.
As a further improvement of the above technical solution, a doping concentration of the electrode layer is greater than a doping concentration of the active layer.
In order to solve the above technical problem, an embodiment of the present invention further provides a method for manufacturing a high-sensitivity hall sensor, which adopts the following technical solutions: the manufacturing method of the high-sensitivity Hall sensor is used for preparing the high-sensitivity Hall sensor and comprises the following steps:
providing a substrate, growing epitaxial material on the substrate to form an active layer, and forming four electrode layers on the active layer;
injecting first ions into the active layer at positions among the four electrode layers to obtain a first layer; injecting second ions into the first layer to obtain a second layer, so as to obtain a Hall piece structure; the energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions;
and coating a polyimide material on the top ends of the isolation layer and the four electrode layers to form a protective layer, and finally obtaining the high-sensitivity Hall sensor.
As a further improvement of the above technical solution, before the step of coating a polyimide material on top ends of the isolation layer and the four electrode layers to form a protective layer, the method further comprises the following steps:
cleaning the surface of the Hall piece structure by using clear water; irradiating the second layer with ultraviolet light after the cleaning; after the irradiation is completed, washing is performed using an acid solution.
As a further improvement of the technical scheme, the acid solution is a hydrofluoric acid solution with the mass fraction of 10%.
Compared with the prior art, the high-sensitivity Hall sensor and the manufacturing method thereof provided by the embodiment of the invention have the following main beneficial effects:
the high-sensitivity Hall sensor is characterized in that an isolation layer is arranged on an active layer, the isolation layer comprises a first layer and a second layer which are arranged in a stacked mode, wherein the implantation energy of first ions of the first layer is larger than that of second ions of the second layer, and the implantation dosage of the first ions is smaller than that of the second ions; the uniformity of ion distribution in the isolation layer can be improved through the cooperation effect of the first layer and the second layer, and therefore the equivalent internal resistance of the high-sensitivity Hall sensor is guaranteed not to be increased, and the sensitivity of the high-sensitivity Hall sensor is improved. In a word, the high-sensitivity Hall sensor has the characteristics of simple structure, high stability and high sensitivity.
Drawings
In order to illustrate the solution of the invention more clearly, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are some embodiments of the invention, and that other drawings may be derived from these drawings by a person skilled in the art without inventive effort. Wherein:
FIG. 1 is a schematic cross-sectional view of a high sensitivity Hall sensor according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a portion of the structure of the high-sensitivity Hall sensor of FIG. 1;
FIG. 3 is a schematic cross-sectional view of a high sensitivity Hall sensor according to another embodiment of the invention;
FIG. 4 is a schematic top view of a portion of the structure of the high-sensitivity Hall sensor of FIG. 3;
fig. 5 is a flow chart illustrating a method of manufacturing a high-sensitivity hall sensor according to an embodiment of the present invention.
The reference numbers in the drawings are as follows:
100. a high-sensitivity hall sensor;
1. a substrate; 1a, a P-type substrate; 2. an active layer; 2a, an N-type active layer; 3. an electrode layer; 3a, an N-type heavily doped electrode layer; 4. an isolation layer; 4a, a P-type isolation layer; 41. a first layer; 41. a first P-type doped layer; 42. a second layer; 42a, a second P-type doped layer; 5. a protective layer; 5a, a polyimide material layer; 6. a silicon dioxide layer.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs; the terminology used in the description presented herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention, e.g., the terms "length," "width," "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc., refer to an orientation or position based on that shown in the drawings, are for convenience of description only and are not to be construed as limiting of the present disclosure.
The terms "including" and "having," and any variations thereof, in the description and claims of this invention and the description of the above figures are intended to cover non-exclusive inclusions; the terms "first," "second," and the like in the description and in the claims, or in the drawings, are used for distinguishing between different objects and not necessarily for describing a particular sequential order. In the description and claims of the present invention and in the description of the above figures, when an element is referred to as being "fixed" or "mounted" or "disposed" or "connected" to another element, it may be directly or indirectly located on the other element. For example, when an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element.
Furthermore, reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
An embodiment of the present invention provides a high-sensitivity hall sensor 100, as shown in fig. 1 and 2, the high-sensitivity hall sensor 100 includes a substrate 1, an active layer 2, an isolation layer 4, and four electrode layers 3.
As shown in fig. 1 and 2, an active layer 2 is disposed on a substrate 1, an isolation layer 4 and four electrode layers 3 are disposed on the active layer 2, and all the electrode layers 3 are dispersedly disposed on the periphery of the isolation layer 4. The active layer 2 is formed in a square shape or other suitable shapes, specifically, in the present embodiment, the active layer 2 is formed in a square shape, four electrode layers 3 are scattered at four ends of the active layer 2, the isolation layer 4 is located among the four electrode layers 3, the electrode layers 3 include, but are not limited to, a square shape, a rectangular shape, a circular shape, and the like, and specifically, in the present embodiment, the electrode layers 3 are rectangular.
As shown in fig. 1, the isolation layer 4 includes a first layer 41 and a second layer 42 which are stacked, the first layer 41 being disposed between the active layer 2 and the second layer 42; the first layer 41 is doped with first ions, the second layer 42 is doped with second ions, the implantation energy of the first ions is greater than that of the second ions, and the implantation dose of the first ions is less than that of the second ions.
It is understood that the working principle of the high-sensitivity hall sensor 100 is roughly as follows: the high-sensitivity Hall sensor 100 is characterized in that the isolation layer 4 is arranged on the active layer 2, the isolation layer 4 comprises a first layer 41 and a second layer 42, wherein the implantation energy of first ions of the first layer 41 is greater than that of second ions of the second layer 42, and the implantation dosage of the first ions is less than that of the second ions; it can be understood that, by combining the two times of different energies and dosages to form the first layer 41 and the second layer 42, the uniformity of ion distribution in the isolation layer 4 can be improved, and it is further ensured that the equivalent internal resistance of the high-sensitivity hall sensor 100 is not increased, so as to improve the sensitivity of the high-sensitivity hall sensor 100.
In summary, compared with the prior art, the high-sensitivity hall sensor 100 has at least the following beneficial effects: this high sensitivity hall sensor 100 can promote the homogeneity of isolation layer 4 ion distribution through the mating reaction of first layer 41 and second layer 42, and then guarantees that high sensitivity hall sensor 100's equivalent internal resistance can not increase to promote this high sensitivity hall sensor 100's sensitivity. In a word, the high-sensitivity hall sensor 100 has the characteristics of simple structure, high stability and high sensitivity.
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.
With the development of electronic integration technology, the smaller the size of the hall sensor, the higher reliability of the hall sensor is required. Most of the existing Hall sensors are packaged by plastic. However, the inventors found that the sealing material of the plastic packaging material has poor air tightness and is sensitive to water vapor. The ingress of moisture can lead to oxidation and corrosion of the metal within the hall sensor. In addition, water vapor entering the Hall sensor can be gradually condensed at the interfaces between the chip and the plastic package material and between the lead frame and the plastic package material; when the hall sensor experiences temperature cycling or high temperature, the water vapor at the interfaces will expand, causing delamination between the hall chip and the molding compound, and between the lead frame and the molding compound. Thus, in some embodiments, as shown in fig. 1, the high-sensitivity hall sensor 100 of the present invention further comprises a protective layer 5; the protective layer 5 is stacked on top of the separator 4 and the four electrode layers 3.
Understandably, as shown in fig. 1, by arranging the protective layer 5 on the top ends of the isolation layer 4 and the four electrode layers 3, the protective layer 5 can effectively prevent water vapor from entering the high-sensitivity hall sensor 100, so that the influence caused by oxidation and corrosion of metal in the high-sensitivity hall sensor 100 can be effectively reduced; therefore, the high-sensitivity hall sensor 100 can be packaged by using a common plastic packaging material, the packaging cost is reduced, and the reliability of the high-sensitivity hall sensor 100 is improved.
In some embodiments, as shown in fig. 1, the protective layer 5 comprises a layer of polyimide material 5 a. Understandably, the polyimide material layer 5a is arranged at the top ends of the isolation layer 4 and the four electrode layers 3, so that on one hand, water vapor can be effectively prevented from entering the high-sensitivity hall sensor 100, and the influence caused by oxidation and corrosion of metal in the high-sensitivity hall sensor 100 is reduced; on the other hand, the polyimide is a high-insulation resin material, so that the polyimide has high stability at high temperature and is not easy to adsorb movable charges, and therefore the surface effect of the active layer 2 of the high-sensitivity hall sensor 100 can be effectively reduced, and the sensitivity of the high-sensitivity hall sensor 100 can be improved.
In some embodiments, as shown in fig. 3 and 4, at the position of the electrode layer 3, the protective layer 5 is provided with at least three strip-shaped holes (not shown) arranged along the length direction of the electrode layer 3, the three strip-shaped holes are arranged in parallel, and each strip-shaped hole is communicated with the corresponding electrode layer 3; the strip-shaped hole is used for an external lead which is connected with the electrode layer 3 by penetrating through the strip-shaped hole. In the present embodiment, the electrode layer 3 has a rectangular shape, and the longitudinal direction of the electrode layer 3 means a direction in which the length is long. The strip-shaped hole is a long strip-shaped rectangular hole, and of course, in other embodiments, the strip-shaped hole may be a hole of other suitable shapes. Understandably, offer the protective layer 5 in bar hole through the top at electrode layer 3, the external wire of being convenient for is connected with electrode layer 3 on the one hand, and on the other hand can effectively prevent the influence of steam to the lead wire.
In some embodiments, as shown in fig. 1, the doping types of first layer 41 and second layer 42 are both P-type doping. It can be understood that P-type doping, i.e., doping trivalent elements such as boron in a semiconductor, by doping P-type ions in the first layer 41 and the second layer 42, wherein the implantation energy of the P-type ions of the first layer 41 is greater than that of the second layer 42, and the implantation dose of the P-type ions of the first layer 41 is less than that of the second layer 42, so that the first layer 41 forms a P-type lightly doped layer (i.e., a P-layer), and the second layer 42 forms a P-type heavily doped layer (i.e., a P + layer), the effect of improving the uniformity of ion distribution is achieved, thereby ensuring that the equivalent internal resistance of the high-sensitivity hall sensor 100 is not increased, and improving the sensitivity of the high-sensitivity hall sensor 100.
In some embodiments, as shown in fig. 2, since the active layer 2 is formed on the substrate 1, the doping type of the active layer 2 is different from that of the substrate 1. Therefore, in some embodiments, the doping type of the substrate 1 is P-type doping, i.e., a trivalent element such as boron is doped into the semiconductor; the doping type of the active layer 2 is N-type doping, i.e. a pentavalent element such as phosphorus is doped into the semiconductor. Correspondingly, the doping type of the electrode layer 3 is N-type doping.
In some embodiments, as shown in fig. 3, a silicon dioxide layer 6 is stacked on top of the substrate 1 and the active layer 2 at the periphery of the electrode layer 3 to isolate the substrate 1 and the active layer 2 from the external environment.
In some embodiments, as shown in fig. 1, the doping concentration of the electrode layer 3 is greater than the doping concentration of the active layer 2.
The structure of the high-sensitivity hall sensor 100 in one embodiment will be briefly described below:
as shown in fig. 1, a high-sensitivity hall sensor 100 comprises a P-type substrate 1a, an N-type active layer 2a, a P-type isolation layer 4a, a polyimide material layer 5a and four N-type heavily doped electrode layers 3 a; the N-type active layer 2a is arranged on the P-type substrate 1a, the P-type isolation layer 4a and the four N-type heavily doped electrode layers 3a are arranged on the N-type active layer 2a, and all the N-type heavily doped electrode layers 3a are dispersedly arranged on the periphery of the P-type isolation layer 4 a; the polyimide material layer 5a is arranged on the top of the P-type isolation layer 4a and the four N-type heavily doped electrode layers 3a in a laminated mode.
The P-type isolation layer 4a includes a first P-type doped layer 41a and a second P-type doped layer 42a, which are stacked, wherein the first P-type doped layer 41a is disposed between the active layer 2 and the second P-type doped layer 42 a; the implantation energy of the P-type ions of the first P-type doped layer 41a is greater than that of the second P-type doped layer 42a, and the implantation dose of the P-type ions of the first P-type doped layer 41a is less than that of the second P-type doped layer 42 a.
Based on the above high-sensitivity hall sensor 100, an embodiment of the present invention further provides a manufacturing method of the high-sensitivity hall sensor 100, where the manufacturing method of the high-sensitivity hall sensor 100 is used to prepare the above high-sensitivity hall sensor 100, as shown in fig. 5, and includes the following steps:
s100, providing a substrate 1, growing epitaxial materials on the substrate 1 to form an active layer 2, and forming four electrode layers 3 on the active layer 2.
Specifically, the active layer 2 is epitaxially formed by growing a semiconductor on the substrate 1 by a thin film deposition technique, and as in the present embodiment, an N-type semiconductor epitaxial material is grown on the P-type substrate 1a by a thin film deposition technique to form the N-type active layer 2 a. Each electrode layer 3 is formed by means including, but not limited to, ion implantation, sputtering, etc., and as in the present embodiment, the heavily N-doped electrode layer 3a may be formed by means of ion implantation, and the doping concentration thereof is greater than that of the N-type active layer 2 a.
S200, injecting first ions into the active layer 2 at positions among the four electrode layers 3 to obtain a first layer 41; injecting second ions into the first layer 41 to obtain a second layer 42, so as to obtain a Hall piece structure; the energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions. As in the present embodiment, the first P-type doped layer 41a may be formed by implanting first P-type ions on the N-type active layer 2a by an ion implantation method, and the second P-type doped layer 42a may be formed by implanting second P-type ions on the first P-type doped layer 41a by an ion implantation method, wherein the implantation energy of the first P-type ions is greater than that of the second P-type ions, and the implantation dose of the first P-type ions is less than that of the second P-type ions.
S300, coating a polyimide material on the top ends of the isolation layer 4 and the four electrode layers 3 to form a protection layer 5, and finally obtaining the high-sensitivity Hall sensor 100.
In summary, compared with the prior art, the manufacturing method of the high-sensitivity hall sensor 100 has at least the following beneficial effects: the manufacturing method of the high-sensitivity hall sensor 100 is used for preparing the high-sensitivity hall sensor 100, and the first layer 41 and the second layer 42 are arranged on the active layer 2, wherein the implantation energy of first ions of the first layer 41 is greater than that of second ions of the second layer 42, and the implantation dose of the first ions is less than that of the second ions; it can be understood that, by combining the two times of implantation with different energies and dosages to form the first layer 41 and the second layer 42, the first layer 41 and the second layer 42 cooperate to improve the uniformity of ion distribution, thereby ensuring that the equivalent internal resistance of the high-sensitivity hall sensor 100 is not increased, so as to improve the sensitivity of the high-sensitivity hall sensor 100. In addition, the protective layer 5 is prepared on the top ends of the isolation layer 4 and the four electrode layers 3, so that on one hand, the protective layer 5 can effectively prevent water vapor from entering the high-sensitivity Hall sensor 100, and the influence caused by oxidation and corrosion of metal in the high-sensitivity Hall sensor 100 is reduced; on the other hand, the polyimide is a high-insulation resin material, so that the polyimide has high stability at high temperature and is not easy to adsorb movable charges, and therefore the surface effect of the active layer 2 of the high-sensitivity hall sensor 100 can be effectively reduced, and the sensitivity of the high-sensitivity hall sensor 100 can be improved.
In some embodiments, at least three strip-shaped holes are transversely formed in the protective layer 5 at the position of the electrode layer 3, and the strip-shaped holes are communicated with the electrode layer 3. Specifically, in step S300, after the step of coating the isolation layer 4 and the top ends of the four electrode layers 3 with the polyimide material to form the protective layer 5, at least three strip-shaped holes arranged along the length direction of the corresponding electrode layer 3 are further formed by etching on the protective layer 5 on the top end of the electrode layer 3 by a dry etching method.
In some embodiments, in step S300, before the step of coating the polyimide material on top of the isolation layer 4 and the four electrode layers 3 to form the protection layer 5, the following steps are further included:
cleaning the surface of the Hall piece structure by using clear water; irradiating the second layer 42 with ultraviolet light after cleaning; after the irradiation is completed, washing is performed using an acid solution. It can be understood that the surface particles and the movable charges of the hall plate structure can be removed through cleaning and irradiation matching, so that the movable charges at the interface of the protective layer 5 and the active layer 2 which are prepared subsequently can be reduced.
In some embodiments, the acid solution is a 10% by weight hydrofluoric acid solution. It is understood that the surface particles and the movable charges of the hall chip structure can be further removed by cleaning with hydrofluoric acid.
In some embodiments, the time of the ultraviolet light irradiation is at least 30 min.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A high-sensitivity Hall sensor, comprising: the device comprises a substrate, an active layer, an isolation layer and four electrode layers;
the active layer is arranged on the substrate, the isolation layer and the four electrode layers are arranged on the active layer, and all the electrode layers are dispersedly arranged on the periphery of the isolation layer;
the isolation layer comprises a first layer and a second layer which are arranged in a stacked mode, and the first layer is arranged between the active layer and the second layer; the first layer is doped with first ions, the second layer is doped with second ions, the implantation energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions.
2. The high-sensitivity hall sensor of claim 1 wherein the high-sensitivity hall sensor further comprises a protective layer; the protective layer is arranged on the top ends of the isolation layer and the four electrode layers in a stacked mode.
3. The high-sensitivity hall sensor of claim 2 wherein the protective layer comprises a layer of polyimide material.
4. The hall sensor according to claim 2 wherein the protective layer is provided with at least three strip holes along the length direction of the electrode layer at the position of the electrode layer, the three strip holes are arranged in parallel, and each strip hole is communicated with the corresponding electrode layer.
5. The high-sensitivity Hall sensor according to any one of claims 1 to 4, wherein the doping types of the first layer and the second layer are both P-type doping.
6. The Hall sensor according to claim 5, wherein the substrate is doped P-type and the active layer and the electrode layer are doped N-type.
7. The high-sensitivity hall sensor of claim 6 wherein the doping concentration of the electrode layer is greater than the doping concentration of the active layer.
8. A manufacturing method of a high-sensitivity hall sensor, which is used for preparing the high-sensitivity hall sensor according to any one of claims 1 to 7, comprising the steps of:
providing a substrate, growing epitaxial material on the substrate to form an active layer, and forming four electrode layers on the active layer;
injecting first ions into the active layer at positions among the four electrode layers to obtain a first layer; injecting second ions into the first layer to obtain a second layer, so as to obtain a Hall piece structure; the energy of the first ions is greater than that of the second ions, and the implantation dosage of the first ions is less than that of the second ions;
and coating a polyimide material on the top ends of the isolation layer and the four electrode layers to form a protective layer, and finally obtaining the high-sensitivity Hall sensor.
9. The method for manufacturing a hall sensor with high sensitivity as claimed in claim 8, wherein before the step of coating a polyimide material on top of said spacer layer and four of said electrode layers to form a protective layer, further comprising the steps of:
cleaning the surface of the Hall piece structure by using clear water; irradiating the second layer with ultraviolet light after the cleaning; after the irradiation is completed, washing is performed using an acid solution.
10. The method of claim 9, wherein the acid solution is a 10% hydrofluoric acid solution by mass.
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