CN112038437A - Multi-main-grid battery piece assembly and preparation process thereof - Google Patents
Multi-main-grid battery piece assembly and preparation process thereof Download PDFInfo
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- CN112038437A CN112038437A CN202011054342.3A CN202011054342A CN112038437A CN 112038437 A CN112038437 A CN 112038437A CN 202011054342 A CN202011054342 A CN 202011054342A CN 112038437 A CN112038437 A CN 112038437A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/049—Protective back sheets
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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Abstract
The invention discloses a multi-main-gate battery piece assembly and a preparation process thereof, and the multi-main-gate battery piece assembly comprises glass, a plurality of main gate battery pieces and a back plate, wherein the glass is arranged above the plurality of main gate battery pieces, a PID (proportion integration differentiation) resistant adhesive layer is arranged between the plurality of main gate battery pieces and the glass, the back plate is arranged below the plurality of main gate battery pieces, an EVA (ethylene vinyl acetate) adhesive layer is arranged between the plurality of main gate battery pieces and the back plate, the plurality of main gate battery pieces comprise battery strings, the number of the battery strings is multiple, two adjacent groups of the battery strings are connected through welding strips, and the battery strings comprise half batteries and the number of the half batteries is multiple. According to the invention, the light source irradiated on the welding strip is reflected after being subjected to angular deflection through the welding strip, so that the reflected light finally reaches the surface of the battery after being subjected to multiple reflection through the glass, the light receiving loss caused by shielding of the welding strip is avoided, the absorption of the multi-main-grid battery piece assembly on the light source is increased, the light loss is reduced, the utilization rate of sunlight is improved, the efficiency of the battery assembly is improved, and the solar cell assembly is suitable for wide popularization and use.
Description
Technical Field
The invention relates to the field of photovoltaic cells, in particular to a multi-main-gate battery piece assembly and a preparation process thereof.
Background
Renewable energy is recyclable and can be automatically regenerated without manpower, wherein solar energy is widely used, a device for converting solar energy into electric energy is called as a photovoltaic cell, the photovoltaic cell comprises glass, cell pieces and a back plate, the cell pieces are welded through welding strips, due to the nature of the welding strips, sunlight can be shielded, the cell pieces are prevented from absorbing sunlight, the utilization rate of the sunlight by the photovoltaic cell is reduced, and the photoelectric conversion efficiency is reduced, so that the multi-main-grid cell piece assembly and the preparation process thereof are provided.
Disclosure of Invention
The invention aims to provide a multi-main-gate battery piece assembly and a preparation process thereof, which aim to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a many main grid battery piece subassembly, includes glass, many main grid battery piece, backplate, the top of many main grid battery piece is provided with glass, be provided with anti PID glue film between many main grid battery piece and the glass, the below of many main grid battery piece is provided with the backplate, be provided with the EVA glue film between many main grid battery piece and the backplate, many main grid battery piece includes that the figure of battery cluster and battery cluster is the multiunit, connects through the solder strip between adjacent two sets of battery clusters, and a set of battery cluster includes that half battery and half battery figure are the multiunit, connects through the solder strip between adjacent two sets of half batteries in a set of battery cluster.
In the technical scheme, the multi-main-grid battery piece component selects a polycrystalline 12-grid component, the main grid is thinner and narrower than the conventional grid component, the shading area of the grid line is reduced, the narrower grid line interval greatly shortens the path of current on the grid line, the transverse resistance of an emitting area is reduced, the collecting capacity of the grid line to the current is improved, the working temperature of the component can be effectively reduced, the long-term power generation performance of the component is improved, the grid line density is increased, the interval is small, when a half battery is subjected to subfissure and fragments, the better power generation performance can be still kept, the gap area is increased, the zero-depth reflection of the component is increased, and the improvement of the power of the component is facilitated.
Furthermore, the welding strip comprises a copper base, a coating and an embossing structure, the coating is arranged on the outer side wall of the copper base, and the embossing structure is arranged on the upper surface of the coating.
Furthermore, the cross section of the copper base is an isosceles triangle, the bevel angle A of the triangle of the cross section of the copper base is 5.4-21.5 degrees, the embossing structure is in a triangular frustum shape and is a plurality of groups which are uniformly distributed, and the included angle C between the bevel edge of the embossing structure and the coating is 30.5-41.6 degrees.
In the technical scheme, the copper base with the isosceles triangle cross section endows the solder strip with a basic shape, so that sunlight incident to a solder strip area is reflected to the surface of a half cell on the bevel edge of the solder strip, the light receiving loss caused by shielding of the solder strip is avoided, the height-width ratio of the solder strip is limited by the determination of the angle of the bevel angle A, and the effective welding of the solder strip on the half cell is ensured; the embossing structure positioned at the top of the welding strip can reflect part of incident light to a glass and air interface, the incident angle is deflected at the same time, the total reflection occurs again at the interface, the incident light is reflected to the surface of a half cell, the angle C between the bevel edge and the coating in the embossing structure limits the sunlight reflection to the angle between the interface and the initial incident light, the total light receiving amount of the half cell is improved, the half-wave loss of the sunlight in the reflection can be reduced by determining the material of the embossing structure, the utilization rate of the sunlight is improved, and therefore the efficiency of a cell assembly is improved.
Further, the anti-PID glue layer comprises an upper glue layer, a middle layer and a lower glue layer, wherein the upper glue layer and the lower glue layer comprise the following components in parts by weight: polyolefin, cage type polysilsesquioxane, an antioxidant, lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, wherein the intermediate layer comprises the following components in parts by weight: ethylene-vinyl acetate copolymer, polyphenyl ether, 4-fluorobenzoyl chloride, anhydrous aluminum chloride, 1, 2-dichloroethane, imidazole, potassium carbonate and p-dibromide benzyl.
A preparation process of a multi-main-grid battery piece assembly comprises the following steps:
1) sorting the battery pieces: the method comprises the following steps of (1) dividing battery pieces with consistent colors and same efficiency into a group, wherein the battery pieces are qualified in appearance;
2) scribing: scribing the sorted battery pieces in a scribing machine to obtain a multi-main-grid half-piece battery;
3) welding: placing the multi-main-grid half-chip battery obtained after scribing in a series welding machine for series welding operation to obtain a battery string; placing the battery string in a welding machine for welding to obtain a multi-main-grid battery plate;
5) laminating: laying and laminating glass, a PID (proportion integration differentiation) -resistant adhesive layer, a multi-main-gate battery plate, EVA (ethylene vinyl acetate copolymer) and a back plate in sequence, and placing the laminated glass in a laminating machine for laminating;
6) framing: and (3) assembling the laminated assembly by using a frame, installing a junction box and a lead-out wire, fixing, putting into a packaging box, wrapping by using a corner protector, and winding a PE film to obtain the product.
Further, the scribing and cutting depth in the step 2) is 50-70%, and the laser parameters are as follows: the speed is 3700-4700 mm/s, the power is 85-100%, the frequency is 250-350 KHz, the carving frequency is 5-12 times, and the pulse width is 10-15 ms.
In the technical scheme, the high-energy laser beam is irradiated on the surface of the cell, so that the irradiated area is locally melted and gasified, and the purpose of scribing is achieved. The scribing is performed by checking the scribing depth of the battery pieces at intervals of 6 hours, the detection positions are the left side of the 1 st main grid, the right side of the middle main grid and the right side of the last main grid in each battery piece, the occurrence probability of the adverse conditions such as no edge breakage, no corner breakage, no cracking and the like in the scribing process is reduced through the setting of the technological parameters, and the scribing quality is improved.
Further, the technological parameters of the welding machine in the step 3) are as follows:
the preheating table is divided into 5 zones with the temperature of 40-100 ℃, 50-110 ℃, 70-130 ℃, 80-140 ℃ and 100-160 ℃, the welding platform is divided into 100-200 ℃, and the cooling temperature is divided into 4 zones with the temperature of 100-160 ℃, 90-150 ℃, 80-140 ℃ and 40-120 ℃; the welding power is 40-70%, the welding time is 1.5-3.0 s, and the welding temperature is 170-240 ℃.
In the technical scheme, an infrared heating mode is used in the step 3) during welding, the battery plate is not directly contacted during welding, the stress damage of half batteries is reduced, the parameter setting during the cooperative welding avoids hidden cracking and insufficient welding, and the yield of the manufactured multi-main-grid battery plate assembly is improved.
Further, the step 5) further comprises the following steps: in the laminating process, an EVA square block is taken and padded at the position of the opening of the back plate, and a high-temperature cloth square block is taken and padded above the opening of the back plate after the back plate is laid.
In the technical scheme, an EVA square block is additionally arranged at the opening of the back plate, and the size of the EVA square block is 12 multiplied by 18 mm; a high-temperature cloth block needs to be additionally arranged above the opening of the back plate after the back plate is laid, the conventional size of the high-temperature cloth block is 25 x 35mm, glue overflow at the opening after lamination is prevented, and the cleanliness of the multi-main-grid battery assembly is kept.
Further, the preparation process of the solder strip comprises the following steps:
taking an oxygen-free copper strip for stamping to prepare a copper base, then placing the copper base in a tin alloy in a molten state for processing for 10-60 s to form a coating, taking out the coating, attaching the coating to an aluminum strip, and carrying out imprinting at the temperature of 150-170 ℃ to form an embossing structure to prepare a welding strip, wherein the tin alloy comprises the following components in parts by weight: 60-96 parts of tin, 0-36.5 parts of lead, 0-3.0 parts of silver and 0-0.5 part of copper.
Further, the preparation process of the PID-resistant glue layer comprises the following steps:
dissolving polyphenyl ether in 1, 2-dichloroethane, adding 4-fluorobenzoyl chloride, anhydrous aluminum chloride and 1, 2-dichloroethane, reacting for 5-7 h at 57-63 ℃, dissolving a reaction product in N, N-dimethyl imide, adding imidazole and potassium carbonate, reacting for 9-11 h at 115-125 ℃, drying the reaction product, adding an ethylene-vinyl acetate copolymer, dissolving in N, N-dimethyl imide, stirring for 9-12 h at room temperature, adding p-dibromide, stirring for 20min, casting to prepare a membrane, and drying to obtain an intermediate layer;
grinding and mixing lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, placing at the temperature of 450-500 ℃ for reacting for 6-10 hours, grinding and mixing again, placing at the temperature of 1000-1100 ℃ for sintering, wherein the sintering time is 20-30 hours, grinding, mixing and sieving, adding silane and a solvent, stirring for 6-12 hours, adding polyolefin, cage type polysilsesquioxane and an antioxidant to prepare a coating, respectively coating the coating on the upper surface and the lower surface of the middle layer to form an upper glue layer and a lower glue layer, and preparing the PID (potential induced degradation) resistant glue layer.
In the technical scheme, the reaction product in the middle layer is provided with positive charges through the reaction, so that cations can be repelled, and the cations are prevented from moving to a half cell through the PID-resistant adhesive film, and the normal work of a PN junction is influenced;
utilize the material to mix the firing and form ceramic powder, can adsorb free sodium ion, free state sodium ion that obtains under preventing the environmental impact removes to half battery, the setting of upper and lower glue film makes anti PID glued membrane to the penetration resistance of cation to obtain the guarantee, and ethylene-vinyl acetate copolymer can bond upper rubber layer and lower glue film, ensure the complex between the glue film, polyolefin has lower vapor transmission rate, higher volume resistance and ultraviolet resistance performance, cage type polysilsesquioxane improves the mechanical properties and the fire behaviour of the anti PID glued membrane of making, promote the compatibility between the material, the cooperation of multiple material and anti PID glued membrane structure, the setting of performance can effectively reduce the skew of ion to the battery piece, the gathering, reach the purpose of anti PID effect, thereby improve battery efficiency.
Compared with the prior art, the invention has the following beneficial effects: according to the multi-main-grid battery piece assembly and the preparation process thereof, the light source irradiated on the welding strip is reflected after being subjected to angle deflection through the welding strip, so that the reflected light finally reaches the surface of the battery after being subjected to multiple reflection through the glass, the light receiving loss caused by shielding of the welding strip is avoided, the absorption of the multi-main-grid battery piece assembly on the light source is increased, the light loss is reduced, the utilization rate of sunlight is improved, and the efficiency of the battery assembly is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of a copper-based cross section in the present invention;
FIG. 2 is a schematic top view of a set of triangular frustum of the embossing structure of the present invention;
FIG. 3 is a schematic cross-sectional view of a set of triangular prism tables of the embossed structure of the present invention.
Wherein A is the bevel angle of the copper-based cross section triangle, and C is the included angle between the bevel edge of the triangular frustum in the embossing structure and the coating.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Dividing 60 groups of battery pieces with consistent colors and same efficiency into one group, and scribing in a scribing machine to obtain a multi-main-grid half-piece battery, wherein the battery pieces are multi-main-grid battery pieces, and the battery piece assemblies are polycrystalline 12-grid assemblies;
taking an oxygen-free copper strip for stamping to prepare a copper base, then placing the copper base in a tin alloy in a molten state for processing for 10s to form a coating, taking out the coating, attaching the coating to an aluminum strip, and carrying out imprinting at the temperature of 150 ℃ to form an embossing structure to prepare a welding strip, wherein the tin alloy comprises the following components in parts by weight: 60 parts of tin, 36.5 parts of lead, 3.0 parts of silver and 0.5 part of copper, wherein the bevel angle A of a copper-based cross section triangle is 5.4 degrees, and the included angle C between the bevel edge of a triangular frustum pyramid in the embossing structure and the coating is 30.5 degrees;
dissolving polyphenyl ether in 1, 2-dichloroethane, adding 4-fluorobenzoyl chloride, anhydrous aluminum chloride and 1, 2-dichloroethane, reacting for 5 hours at 57 ℃, dissolving a reaction product in N, N-dimethyl imide, adding imidazole and potassium carbonate, reacting for 9 hours at 115 ℃, drying the reaction product, adding an ethylene-vinyl acetate copolymer, dissolving in N, N-dimethyl imide, stirring for 9 hours at room temperature, adding p-dibromide, stirring for 20 minutes, casting to prepare a membrane, and drying to obtain an intermediate layer; grinding and mixing lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, placing at the temperature of 450 ℃ for reacting for 6 hours, grinding and mixing again, placing at the temperature of 1000 ℃ for sintering after grinding and mixing for 20 hours, grinding, mixing and sieving, adding silane and a solvent, stirring for 6 hours, adding polyolefin, cage-type polysilsesquioxane and an antioxidant to prepare a coating, coating the coating on the upper surface and the lower surface of the middle layer respectively to form an upper adhesive layer and a lower adhesive layer, and preparing a PID (potential induced degradation) resistant adhesive layer;
placing the multi-main-grid half-chip battery obtained after scribing in a series welding machine for series welding operation to obtain a battery string; placing the battery string in a welding machine for welding to obtain a multi-main-grid battery plate, wherein the preheating table of the welding machine is divided into 5 regions at the temperature of 40 ℃, 50 ℃, 70 ℃, 80 ℃ and 100 ℃, the welding platform is at the temperature of 100 ℃, and the cooling temperature is divided into 4 regions at the temperature of 100 ℃, 90 ℃, 80 ℃ and 40 ℃; the welding power is 40%, the welding time is 1.5s, and the welding temperature is 170 ℃;
laying and laminating the glass, the PID-resistant adhesive layer, the multi-main-gate battery plate, the EVA and the back plate in sequence, taking the EVA square block to be padded at the position of the opening of the back plate in the laminating process, taking the high-temperature cloth square block to be padded above the opening of the back plate after the back plate is laid, and placing the back plate in a laminating machine for laminating; and (3) assembling the laminated assembly by using a frame, installing a junction box and a lead-out wire, fixing, putting into a packaging box, wrapping by using a corner protector, and winding a PE film to obtain the multi-main-gate battery piece assembly.
Example 2
Dividing 60 groups of battery pieces with consistent colors and same efficiency into one group, and scribing in a scribing machine to obtain a multi-main-grid half-piece battery, wherein the battery pieces are multi-main-grid battery pieces, and the battery piece assemblies are polycrystalline 12-grid assemblies;
taking an oxygen-free copper strip to prepare a copper base by stamping, then placing the copper base in a tin alloy in a molten state for processing for 35s to form a coating, taking out the coating, attaching the coating to an aluminum strip, and carrying out imprinting at the temperature of 160 ℃ to form an embossing structure to prepare a welding strip, wherein the tin alloy comprises the following components in parts by weight: 78 parts of tin, 18 parts of lead, 1.5 parts of silver and 0.2 part of copper, wherein the bevel angle A of a copper-based cross section triangle is 13.5 degrees, and the included angle C between the bevel edge of a triangular frustum pyramid in the embossing structure and the coating is 36 degrees;
dissolving polyphenyl ether in 1, 2-dichloroethane, adding 4-fluorobenzoyl chloride, anhydrous aluminum chloride and 1, 2-dichloroethane, reacting at 60 ℃ for 6 hours, dissolving a reaction product in N, N-dimethyl imide, adding imidazole and potassium carbonate, reacting at 120 ℃ for 10 hours, drying the reaction product, adding an ethylene-vinyl acetate copolymer, dissolving in N, N-dimethyl imide, stirring at room temperature for 11 hours, adding p-dibromide, stirring for 20min, casting to prepare a membrane, and drying to obtain an intermediate layer; grinding and mixing lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, placing at 475 ℃ for reacting for 8 hours, grinding and mixing again, placing at 1050 ℃ for sintering after grinding and mixing, wherein the sintering time is 25 hours, grinding, mixing and sieving, adding silane and a solvent, stirring for 9 hours, adding polyolefin, cage-type polysilsesquioxane and an antioxidant to prepare a coating, and respectively coating the coating on the upper surface and the lower surface of the middle layer to form an upper glue layer and a lower glue layer so as to prepare a PID (potential induced degradation) resistant glue layer;
placing the multi-main-grid half-chip battery obtained after scribing in a series welding machine for series welding operation to obtain a battery string; placing the battery string in a welding machine for welding to obtain a multi-main-grid battery plate, wherein the preheating table temperature of the welding machine is divided into 5 zones, the temperature is 70 ℃, 80 ℃, 100 ℃, 110 ℃ and 130 ℃, the welding platform temperature is 150 ℃, and the cooling temperature is divided into 4 zones, the temperature is 130 ℃, 120 ℃, 110 ℃ and 80 ℃; the welding power is 55%, the welding time is 2.2s, and the welding temperature is 205 ℃;
laying and laminating the glass, the PID-resistant adhesive layer, the multi-main-gate battery plate, the EVA and the back plate in sequence, taking the EVA square block to be padded at the position of the opening of the back plate in the laminating process, taking the high-temperature cloth square block to be padded above the opening of the back plate after the back plate is laid, and placing the back plate in a laminating machine for laminating; and (3) assembling the laminated assembly by using a frame, installing a junction box and a lead-out wire, fixing, putting into a packaging box, wrapping by using a corner protector, and winding a PE film to obtain the product.
Example 3
Dividing 60 groups of battery pieces with consistent colors and same efficiency into one group, and scribing in a scribing machine to obtain a multi-main-grid half-piece battery, wherein the battery pieces are multi-main-grid battery pieces, and the battery piece assemblies are polycrystalline 12-grid assemblies;
taking an oxygen-free copper strip to prepare a copper base by stamping, then placing the copper base in a tin alloy in a molten state to process for 60s to form a coating, taking out the coating, attaching the coating to an aluminum strip, and carrying out imprinting at the temperature of 170 ℃ to form an embossing structure to prepare a welding strip, wherein the tin alloy comprises the following components in parts by weight: 96 parts of tin, 3.0 parts of silver and 0.5 part of copper, wherein the bevel angle A of a copper-based cross section triangle is 21.5 degrees, and the included angle C between the bevel edge of a triangular frustum pyramid in the embossing structure and the coating is 41.6 degrees;
dissolving polyphenyl ether in 1, 2-dichloroethane, adding 4-fluorobenzoyl chloride, anhydrous aluminum chloride and 1, 2-dichloroethane, reacting at 63 ℃ for 7 hours, dissolving a reaction product in N, N-dimethyl imide, adding imidazole and potassium carbonate, reacting at 125 ℃ for 11 hours, drying the reaction product, adding an ethylene-vinyl acetate copolymer, dissolving in N, N-dimethyl imide, stirring at room temperature for 12 hours, adding p-dibromide, stirring for 20min, casting to prepare a membrane, and drying to obtain an intermediate layer; grinding and mixing lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, placing at 500 ℃ for reaction for 10 hours, grinding and mixing again, placing at 1100 ℃ for sintering after grinding and mixing, wherein the sintering time is 30 hours, grinding, mixing and sieving, adding silane and a solvent, stirring for 12 hours, adding polyolefin, cage-type polysilsesquioxane and an antioxidant to prepare a coating, respectively coating the coating on the upper surface and the lower surface of the middle layer to form an upper glue layer and a lower glue layer, and preparing a PID (potential induced degradation) resistant glue layer;
placing the multi-main-grid half-chip battery obtained after scribing in a series welding machine for series welding operation to obtain a battery string; placing the battery string in a welding machine for welding to obtain a multi-main-grid battery plate, wherein the temperature of a preheating table of the welding machine is divided into 5 regions, the temperature is 100 ℃, 110 ℃, 130 ℃, 140 ℃ and 160 ℃, the temperature of a welding platform is 200 ℃, and the cooling temperature is divided into 4 regions, the temperature is 160 ℃, 150 ℃, 140 ℃ and 120 ℃; the welding power is 70%, the welding time is 3.0s, and the welding temperature is 240 ℃;
laying and laminating the glass, the PID-resistant adhesive layer, the multi-main-gate battery plate, the EVA and the back plate in sequence, taking the EVA square block to be padded at the position of the opening of the back plate in the laminating process, taking the high-temperature cloth square block to be padded above the opening of the back plate after the back plate is laid, and placing the back plate in a laminating machine for laminating; and (3) assembling the laminated assembly by using a frame, installing a junction box and a lead-out wire, fixing, putting into a packaging box, wrapping by using a corner protector, and winding a PE film to obtain the multi-main-gate battery piece assembly.
Comparative example 1
Compared with example 2, the battery piece in comparative example 1 was replaced with a conventional battery piece.
Comparative example 2
Compared with example 2, the PID resistant adhesive film in comparative example 2 is replaced by an EVA adhesive film.
Comparative example 3
In contrast to example 2, the solder strip in comparative example 3 is a conventional solder strip.
Experiment:
taking the multi-master-gate battery piece assembly prepared in the examples 1-3 and the comparative examples 1-3, carrying out DH2000 damp-heat aging test, UV60kWh ultraviolet aging test and TC200 cold-heat cycle aging test, respectively testing the short-circuit current and the open-circuit voltage before and after the test, recording the detection result, comparing with the data before the test, and obtaining the following data:
from the data in the table above, it is clear that the following conclusions can be drawn:
the multi-main-gate battery piece assemblies prepared in examples 1-3 and comparative examples 1-3 form a control experiment before and after aging, and the detection results show that compared with comparative examples 1 and 3, the multi-main-gate battery piece assemblies in examples 1-3 have obvious numerical rise of initial short-circuit current, open-circuit voltage and power, and have less obvious numerical change before and after aging, and the arrangement of the multi-main-gate battery pieces and the improvement of welding strips can promote the power rise of the multi-main-gate battery pieces; compared with the embodiment 2, the initial short-circuit current, the open-circuit voltage and the power of the multi-master-gate battery piece assembly in the comparative example 2 are reduced, the change of the aged values is more obvious, the improvement of the power is promoted by setting the anti-PID adhesive film, and the anti-PID adhesive film has better ageing resistance, which fully shows that the invention can effectively improve the utilization rate of the multi-master-gate battery piece assembly to the solar energy, achieves the purpose of improving the efficiency of the multi-master-gate battery piece assembly, and has higher practicability.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A multi-master-grid battery piece assembly comprises glass, a multi-master-grid battery piece and a back plate, and is characterized in that: the multi-master-grid solar cell is characterized in that glass is arranged above the multi-master-grid solar cell, an anti-PID (proportion integration differentiation) adhesive layer is arranged between the multi-master-grid solar cell and the glass, a back plate is arranged below the multi-master-grid solar cell, an EVA (ethylene vinyl acetate) adhesive layer is arranged between the multi-master-grid solar cell and the back plate, the number of the multi-master-grid solar cell comprising cell strings and cell strings is a plurality of groups, the adjacent two groups of cell strings are connected through welding strips, the group of cell strings comprises half cells and the number of the half cells are a plurality of groups, and the adjacent two groups of half cells in the.
2. A multi-master gate battery plate assembly as defined in claim 1, wherein: the welding strip comprises a copper base, a coating and an embossing structure, the coating is arranged on the outer side wall of the copper base, and the embossing structure is arranged on the upper surface of the coating.
3. A multi-master-gate battery plate assembly as claimed in claim 2, wherein: the cross section of the copper base is an isosceles triangle, the oblique angle A of the copper base cross section triangle is 5.4-21.5 degrees, the embossing structure is in a triangular frustum shape and is a plurality of groups which are uniformly distributed, and the included angle C between the oblique edge of the embossing structure and the coating is 30.5-41.6 degrees.
4. A multi-master gate battery plate assembly as defined in claim 1, wherein: the anti-PID adhesive layer comprises an upper adhesive layer, a middle layer and a lower adhesive layer, wherein the upper adhesive layer and the lower adhesive layer comprise the following components in parts by weight: polyolefin, cage type polysilsesquioxane, an antioxidant, lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, wherein the intermediate layer comprises the following components in parts by weight: ethylene-vinyl acetate copolymer, polyphenyl ether, 4-fluorobenzoyl chloride, anhydrous aluminum chloride, 1, 2-dichloroethane, imidazole, potassium carbonate and p-dibromide benzyl.
5. A preparation process of a multi-main-grid battery plate assembly is characterized by comprising the following steps:
1) sorting the battery pieces: the method comprises the following steps of (1) dividing battery pieces with consistent colors and same efficiency into a group, wherein the battery pieces are qualified in appearance;
2) scribing: scribing the sorted battery pieces in a scribing machine to obtain a multi-main-grid half-piece battery;
3) welding: placing the multi-main-grid half-chip battery obtained after scribing in a series welding machine for series welding operation to obtain a battery string; placing the battery string in a welding machine for welding to obtain a multi-main-grid battery plate;
5) laminating: laying and laminating glass, a PID (proportion integration differentiation) -resistant adhesive layer, a multi-main-gate battery plate, EVA (ethylene vinyl acetate copolymer) and a back plate in sequence, and placing the laminated glass in a laminating machine for laminating;
6) framing: and (3) assembling the laminated assembly by using a frame, installing a junction box and a lead-out wire, fixing, putting into a packaging box, wrapping by using a corner protector, and winding a PE film to obtain the product.
6. The manufacturing process of the multi-master-gate battery piece assembly according to claim 5, wherein the dicing cutting depth in the step 2) is 50-70%, and the laser parameters are as follows: the speed is 3700-4700 mm/s, the power is 85-100%, the frequency is 250-350 KHz, the carving frequency is 5-12 times, and the pulse width is 10-15 ms.
7. The process of claim 5, wherein the manufacturing process of a multi-master-gate battery plate assembly comprises: the technological parameters of the welding machine in the step 3) are as follows:
the preheating table is divided into 5 zones with the temperature of 40-100 ℃, 50-110 ℃, 70-130 ℃, 80-140 ℃ and 100-160 ℃, the welding platform is divided into 100-200 ℃, and the cooling temperature is divided into 4 zones with the temperature of 100-160 ℃, 90-150 ℃, 80-140 ℃ and 40-120 ℃; the welding power is 40-70%, the welding time is 1.5-3.0 s, and the welding temperature is 170-240 ℃.
8. The process of claim 5, wherein the manufacturing process of a multi-master-gate battery plate assembly comprises: the step 5) further comprises the following steps: in the laminating process, an EVA square block is taken and padded at the position of the opening of the back plate, and a high-temperature cloth square block is taken and padded above the opening of the back plate after the back plate is laid.
9. The process of claim 5, wherein the manufacturing process of a multi-master-gate battery plate assembly comprises: the preparation process of the solder strip comprises the following steps:
taking an oxygen-free copper strip for stamping to prepare a copper base, then placing the copper base in a tin alloy in a molten state for processing for 10-60 s to form a coating, taking out the coating, attaching the coating to an aluminum strip, and carrying out imprinting at the temperature of 150-170 ℃ to form an embossing structure to prepare a welding strip, wherein the tin alloy comprises the following components in parts by weight: 60-96 parts of tin, 0-36.5 parts of lead, 0-3.0 parts of silver and 0-0.5 part of copper.
10. The process of claim 5, wherein the manufacturing process of a multi-master-gate battery plate assembly comprises: the preparation process of the PID-resistant adhesive layer comprises the following steps:
dissolving polyphenyl ether in 1, 2-dichloroethane, adding 4-fluorobenzoyl chloride, anhydrous aluminum chloride and 1, 2-dichloroethane, reacting for 5-7 h at 57-63 ℃, dissolving a reaction product in N, N-dimethyl imide, adding imidazole and potassium carbonate, reacting for 9-11 h at 115-125 ℃, drying the reaction product, adding an ethylene-vinyl acetate copolymer, dissolving in N, N-dimethyl imide, stirring for 9-12 h at room temperature, adding p-dibromide, stirring for 20min, casting to prepare a membrane, and drying to obtain an intermediate layer;
grinding and mixing lithium carbonate, aluminum oxide, ammonium dihydrogen phosphate and titanium dioxide, placing at the temperature of 450-500 ℃ for reacting for 6-10 hours, grinding and mixing again, placing at the temperature of 1000-1100 ℃ for sintering, wherein the sintering time is 20-30 hours, grinding, mixing and sieving, adding silane and a solvent, stirring for 6-12 hours, adding polyolefin, cage type polysilsesquioxane and an antioxidant to prepare a coating, respectively coating the coating on the upper surface and the lower surface of the middle layer to form an upper glue layer and a lower glue layer, and preparing the PID (potential induced degradation) resistant glue layer.
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| CN113675281A (en) * | 2021-07-28 | 2021-11-19 | 江苏东鋆光伏科技有限公司 | Large silicon wafer main gate double-sided dual-glass assembly and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113675281A (en) * | 2021-07-28 | 2021-11-19 | 江苏东鋆光伏科技有限公司 | Large silicon wafer main gate double-sided dual-glass assembly and preparation method thereof |
| CN113675281B (en) * | 2021-07-28 | 2024-09-20 | 江苏东鋆光伏科技有限公司 | Large silicon wafer main grid double-sided double-glass assembly and preparation method thereof |
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